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3EZ130D5/TR12 3EZ130D5/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 130V 3W DO204AL
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3EZ130D10E3/TR8 3EZ130D10E3/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 130V 3W DO204AL
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3EZ130D/TR12 3EZ130D/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 130V 3W DO204AL
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3EZ130D2E3/TR8 3EZ130D2E3/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 130V 3W DO204AL
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3EZ130DE3/TR8 3EZ130DE3/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 130V 3W DO204AL
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JANTX2N3027 JANTX2N3027 Microsemi Corporation 11608-wt8-12-datasheet Description: SCR 30V 250MA TO18
Voltage - Off State: 30 V
Current - On State (It (RMS)) (Max): 250 mA
Supplier Device Package: TO-18
Current - Off State (Max): 100 nA
Voltage - On State (Vtm) (Max): 1.5 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Non Rep. Surge 50, 60Hz (Itsm): 5A, 8A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -65°C ~ 150°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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MSMBG2K4.0e3 MSMBG2K4.0e3 Microsemi Corporation MSMB(G,J)2K3.0%20-%205.0.pdf Description: TVS DIODE 4VWM 6.3VC SMBG
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LE71HR0021 Microsemi Corporation Le71HR0021_RefGuide_RevA_V2.pdf Description: LINE MODULE QLSLAC/R79
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1.5KE13AE3/TR13 1.5KE13AE3/TR13 Microsemi Corporation RF01008_rE.pdf Description: TVS DIODE 11.1VWM 18.2VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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MAP5KE90CAe3 MAP5KE90CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 90VWM 146VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 500W
Power Line Protection: No
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MAP5KE90Ae3 MAP5KE90Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 90VWM 146VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MAP5KE90CA MAP5KE90CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 90VWM 146VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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LXMG1628-12-62 LXMG1628-12-62 Microsemi Corporation Description: MOD INVERTER CCFL DUAL 6W 12V
Type: CCFL and UV Lamps
Voltage - Input: 12V
Output: 1650V
Mounting Type: Chassis Mount
Size / Dimension: 6.50" L x 0.83" W x 0.39" H (165mm x 21mm x 10mm)
Packaging: Bulk
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APT15F50K APT15F50K Microsemi Corporation APT15F50K.pdf Description: MOSFET N-CH 500V 15A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-220 [K]
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 223W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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JANTX1N4989CUS JANTX1N4989CUS Microsemi Corporation 11059-sd44a-datasheet Description: DIODE ZENER 200V 5W D5B
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JANTX1N4989C Microsemi Corporation 10913-sa5-37-datasheet Description: DIODE ZENER 200V 5W E AXIAL
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JANTX1N4989DUS JANTX1N4989DUS Microsemi Corporation 11059-sd44a-datasheet Description: DIODE ZENER 200V 5W D5B
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JANTX1N4989D Microsemi Corporation 10913-sa5-37-datasheet Description: DIODE ZENER 200V 5W E AXIAL
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±1%
Packaging: Bulk
Qualification: MIL-PRF-19500/435
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: E, Axial
Impedance (Max) (Zzt): 500 Ohms
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MXPLAD30KP260Ae3 Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 260VWM 419VC PLAD
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APTGV30H60T3G Microsemi Corporation APTGV30H60T3G.pdf Description: IGBT MODULE 600V 50A 90W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 90 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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APTGT30H60T3G Microsemi Corporation High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 600V 50A 90W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 90 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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152OR-S300-OCXO Microsemi Corporation Description: NETWORK TIME SERVER
Type: Network Time Server
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MXLPLAD7.5KP51AE3 Microsemi Corporation 132315-plad7-5kp-datasheet Description: TVS DIODE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 51V
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
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MXLPLAD7.5KP51A Microsemi Corporation 132315-plad7-5kp-datasheet Description: TVS DIODE
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 51V
Applications: Automotive
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MAPLAD7.5KP51A Microsemi Corporation 132315-plad7-5kp-datasheet Description: TVS DIODE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 51V
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
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MPLAD7.5KP51A Microsemi Corporation 132315-plad7-5kp-datasheet Description: TVS DIODE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 51V
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
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JANTX2N4857 JANTX2N4857 Microsemi Corporation 6078-2n4856-pdf Description: JFET N-CH 40V TO18
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Resistance - RDS(On): 40 Ohms
Power - Max: 360 mW
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-18
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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APTM50DHM35G Microsemi Corporation APTM50DHM35G.pdf Description: MOSFET 2N-CH 500V 99A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 99A
Drain to Source Voltage (Vdss): 500V
Power - Max: 781W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTC60DAM35T1G Microsemi Corporation APTC60DAM35T1G.pdf Description: MOSFET N-CH 600V 72A SP1
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APTM50DAM35TG Microsemi Corporation APTM50DAM35TG.pdf Description: MOSFET N-CH 500V 99A SP4
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APT8018JN APT8018JN Microsemi Corporation APT8018JN.pdf Description: MOSFET N-CH 800V 40A ISOTOP
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APT40M42JN APT40M42JN Microsemi Corporation APT40M42JN_Web.pdf Description: MOSFET N-CH 400V 86A ISOTOP
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1N4531UR 1N4531UR Microsemi Corporation 5817-1n4531ur-datasheet Description: DIODE GEN PURP 75V 125MA DO213AA
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1N4531 Microsemi Corporation 5816-1n4531-datasheet Description: DIODE GEN PURP 75V 125MA DO34
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1N4534 1N4534 Microsemi Corporation 5819-1n4534-datasheet Description: DIODE STANDARD 50V 150MA DO34
Packaging: Bulk
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-34
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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2N6849 2N6849 Microsemi Corporation 8809-lds-0009-datasheet Description: MOSFET P-CH 100V 6.5A TO39
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
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JANTXV2N6849 JANTXV2N6849 Microsemi Corporation 8809-lds-0009-datasheet Description: MOSFET P-CH 100V 6.5A TO205AF
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
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JAN2N6849U Microsemi Corporation 125287-lds-0009-1-datasheet Description: MOSFET P-CH 100V 6.5A 18ULCC
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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JANTXV2N6849U Microsemi Corporation 125287-lds-0009-1-datasheet Description: MOSFET P-CH 100V 6.5A 18ULCC
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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JAN2N6849 JAN2N6849 Microsemi Corporation 8809-lds-0009-datasheet Description: MOSFET P-CH 100V 6.5A TO39
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
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2N6849U Microsemi Corporation 125287-lds-0009-1-datasheet Description: MOSFET P-CH 100V 6.5A 18ULCC
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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SMCG6050AE3/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 25VWM 41.4VC DO215AB
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SMCG6050A/TR13 Microsemi Corporation SMC(G,J)6036-6072A,e3.pdf Description: TVS DIODE 25VWM 41.4VC DO215AB
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APTM50DUM17G Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=8178 Description: MOSFET 2N-CH 500V 180A SP6
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JANTX1N4955DUS JANTX1N4955DUS Microsemi Corporation 11059-sd44a-datasheet Description: DIODE ZENER 7.5V 5W D5B
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LE51HR0164G Microsemi Corporation Description: BOARD LE792388VQC LE79272PQC
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1N5914BG 1N5914BG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 3.6V 1.25W DO204AL
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
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1N5914BPE3/TR12 1N5914BPE3/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 3.6V 1.5W DO204AL
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
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1N5914BPE3/TR8 1N5914BPE3/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 3.6V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N5914BP/TR12 1N5914BP/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 3.6V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N5914BE3/TR13 1N5914BE3/TR13 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 3.6V 1.5W DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5914BP/TR8 1N5914BP/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 3.6V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMBG5938B/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 36V 2W SMBG
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SMBG5938BE3/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 36V 2W SMBG
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: SMBG (DO-215AA)
Impedance (Max) (Zzt): 38 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MAP5KE20A Microsemi Corporation Description: TVS DIODE 20VWM 32.4VC DO204AL
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 15.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Qualification: MIL-PRF-19500
Grade: Military
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MAP5KE20CAe3 MAP5KE20CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 20VWM 32.4VC DO204AL
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 15.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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1.5KE20AE3/TR13 1.5KE20AE3/TR13 Microsemi Corporation DS_278_1.5KE%20Series.pdf Description: TVS DIODE 17.1VWM 27.7VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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MSMBJ2K3.3 MSMBJ2K3.3 Microsemi Corporation MSMB(G,J)2K3.0%20-%205.0.pdf Description: TVS DIODE 3.3VWM 5.8VC SMBJ
Supplier Device Package: SMBJ (DO-214AA)
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 2000W (2kW)
Voltage - Clamping (Max) @ Ipp: 5.8V
Voltage - Breakdown (Min): 4.6V
Unidirectional Channels: 1
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MSKD200-08 MSKD200-08 Microsemi Corporation MSxD200.pdf Description: DIODE MODULE 800V 200A SD2
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MSKD200-16 MSKD200-16 Microsemi Corporation MSxD200.pdf Description: DIODE MODULE 1.6KV 200A SD2
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3EZ130D5/TR12 10926-sa5-67-datasheet
3EZ130D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 3W DO204AL
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3EZ130D10E3/TR8 10926-sa5-67-datasheet
3EZ130D10E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 3W DO204AL
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3EZ130D/TR12 10926-sa5-67-datasheet
3EZ130D/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 3W DO204AL
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3EZ130D2E3/TR8 10926-sa5-67-datasheet
3EZ130D2E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 3W DO204AL
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3EZ130DE3/TR8 10926-sa5-67-datasheet
3EZ130DE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 3W DO204AL
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JANTX2N3027 11608-wt8-12-datasheet
JANTX2N3027
Hersteller: Microsemi Corporation
Description: SCR 30V 250MA TO18
Voltage - Off State: 30 V
Current - On State (It (RMS)) (Max): 250 mA
Supplier Device Package: TO-18
Current - Off State (Max): 100 nA
Voltage - On State (Vtm) (Max): 1.5 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Non Rep. Surge 50, 60Hz (Itsm): 5A, 8A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -65°C ~ 150°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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AnzahlPrivatkunde
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MSMBG2K4.0e3 MSMB(G,J)2K3.0%20-%205.0.pdf
MSMBG2K4.0e3
Hersteller: Microsemi Corporation
Description: TVS DIODE 4VWM 6.3VC SMBG
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LE71HR0021 Le71HR0021_RefGuide_RevA_V2.pdf
Hersteller: Microsemi Corporation
Description: LINE MODULE QLSLAC/R79
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1.5KE13AE3/TR13 RF01008_rE.pdf
1.5KE13AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 11.1VWM 18.2VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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MAP5KE90CAe3 11043-p5ke-datasheet
MAP5KE90CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 90VWM 146VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 500W
Power Line Protection: No
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MAP5KE90Ae3 11043-p5ke-datasheet
MAP5KE90Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 90VWM 146VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MAP5KE90CA 11043-p5ke-datasheet
MAP5KE90CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 90VWM 146VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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LXMG1628-12-62
LXMG1628-12-62
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL DUAL 6W 12V
Type: CCFL and UV Lamps
Voltage - Input: 12V
Output: 1650V
Mounting Type: Chassis Mount
Size / Dimension: 6.50" L x 0.83" W x 0.39" H (165mm x 21mm x 10mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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APT15F50K APT15F50K.pdf
APT15F50K
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 15A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-220 [K]
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 223W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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JANTX1N4989CUS 11059-sd44a-datasheet
JANTX1N4989CUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 5W D5B
Produkt ist nicht verfügbar
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JANTX1N4989C 10913-sa5-37-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 5W E AXIAL
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JANTX1N4989DUS 11059-sd44a-datasheet
JANTX1N4989DUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 5W D5B
Produkt ist nicht verfügbar
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JANTX1N4989D 10913-sa5-37-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 5W E AXIAL
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±1%
Packaging: Bulk
Qualification: MIL-PRF-19500/435
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: E, Axial
Impedance (Max) (Zzt): 500 Ohms
Produkt ist nicht verfügbar
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MXPLAD30KP260Ae3 9523-mplad30kp-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE 260VWM 419VC PLAD
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APTGV30H60T3G APTGV30H60T3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 50A 90W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 90 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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APTGT30H60T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 50A 90W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 90 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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152OR-S300-OCXO
Hersteller: Microsemi Corporation
Description: NETWORK TIME SERVER
Type: Network Time Server
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MXLPLAD7.5KP51AE3 132315-plad7-5kp-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 51V
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
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MXLPLAD7.5KP51A 132315-plad7-5kp-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 51V
Applications: Automotive
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MAPLAD7.5KP51A 132315-plad7-5kp-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 51V
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
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MPLAD7.5KP51A 132315-plad7-5kp-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 7500W (7.5kW)
Unidirectional Channels: 1
Supplier Device Package: Mini-PLAD
Voltage - Reverse Standoff (Typ): 51V
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N4857 6078-2n4856-pdf
JANTX2N4857
Hersteller: Microsemi Corporation
Description: JFET N-CH 40V TO18
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Resistance - RDS(On): 40 Ohms
Power - Max: 360 mW
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-18
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM50DHM35G APTM50DHM35G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 500V 99A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 99A
Drain to Source Voltage (Vdss): 500V
Power - Max: 781W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTC60DAM35T1G APTC60DAM35T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 72A SP1
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APTM50DAM35TG APTM50DAM35TG.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 99A SP4
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APT8018JN APT8018JN.pdf
APT8018JN
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 40A ISOTOP
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APT40M42JN APT40M42JN_Web.pdf
APT40M42JN
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 86A ISOTOP
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1N4531UR 5817-1n4531ur-datasheet
1N4531UR
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 125MA DO213AA
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1N4531 5816-1n4531-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 125MA DO34
Produkt ist nicht verfügbar
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1N4534 5819-1n4534-datasheet
1N4534
Hersteller: Microsemi Corporation
Description: DIODE STANDARD 50V 150MA DO34
Packaging: Bulk
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-34
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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2N6849 8809-lds-0009-datasheet
2N6849
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
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JANTXV2N6849 8809-lds-0009-datasheet
JANTXV2N6849
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO205AF
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
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JAN2N6849U 125287-lds-0009-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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JANTXV2N6849U 125287-lds-0009-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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JAN2N6849 8809-lds-0009-datasheet
JAN2N6849
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
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2N6849U 125287-lds-0009-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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SMCG6050AE3/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 25VWM 41.4VC DO215AB
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SMCG6050A/TR13 SMC(G,J)6036-6072A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 25VWM 41.4VC DO215AB
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APTM50DUM17G index.php?option=com_docman&task=doc_download&gid=8178
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 500V 180A SP6
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JANTX1N4955DUS 11059-sd44a-datasheet
JANTX1N4955DUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 5W D5B
Produkt ist nicht verfügbar
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LE51HR0164G
Hersteller: Microsemi Corporation
Description: BOARD LE792388VQC LE79272PQC
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1N5914BG 10922-sa5-57-datasheet
1N5914BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.25W DO204AL
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5914BPE3/TR12 10922-sa5-57-datasheet
1N5914BPE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
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1N5914BPE3/TR8 10922-sa5-57-datasheet
1N5914BPE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N5914BP/TR12 10922-sa5-57-datasheet
1N5914BP/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N5914BE3/TR13 10922-sa5-57-datasheet
1N5914BE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5914BP/TR8 10922-sa5-57-datasheet
1N5914BP/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO204AL
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMBG5938B/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 36V 2W SMBG
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SMBG5938BE3/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 36V 2W SMBG
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: SMBG (DO-215AA)
Impedance (Max) (Zzt): 38 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MAP5KE20A
Hersteller: Microsemi Corporation
Description: TVS DIODE 20VWM 32.4VC DO204AL
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 15.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Qualification: MIL-PRF-19500
Grade: Military
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MAP5KE20CAe3 11043-p5ke-datasheet
MAP5KE20CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 20VWM 32.4VC DO204AL
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 15.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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1.5KE20AE3/TR13 DS_278_1.5KE%20Series.pdf
1.5KE20AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 17.1VWM 27.7VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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MSMBJ2K3.3 MSMB(G,J)2K3.0%20-%205.0.pdf
MSMBJ2K3.3
Hersteller: Microsemi Corporation
Description: TVS DIODE 3.3VWM 5.8VC SMBJ
Supplier Device Package: SMBJ (DO-214AA)
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 2000W (2kW)
Voltage - Clamping (Max) @ Ipp: 5.8V
Voltage - Breakdown (Min): 4.6V
Unidirectional Channels: 1
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MSKD200-08 MSxD200.pdf
MSKD200-08
Hersteller: Microsemi Corporation
Description: DIODE MODULE 800V 200A SD2
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MSKD200-16 MSxD200.pdf
MSKD200-16
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.6KV 200A SD2
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