APT15GP90KG Microsemi Corporation
Hersteller: Microsemi Corporation
Description: IGBT 900V 43A 250W TO220
Power - Max: 250 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 43 A
Part Status: Obsolete
Gate Charge: 60 nC
Test Condition: 600V, 15A, 4.3Ohm, 15V
Switching Energy: 200µJ (off)
Td (on/off) @ 25°C: 9ns/33ns
IGBT Type: PT
Supplier Device Package: TO-220 [K]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details APT15GP90KG Microsemi Corporation
Description: IGBT 900V 43A 250W TO220, Power - Max: 250 W, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector (Ic) (Max): 43 A, Part Status: Obsolete, Gate Charge: 60 nC, Test Condition: 600V, 15A, 4.3Ohm, 15V, Switching Energy: 200µJ (off), Td (on/off) @ 25°C: 9ns/33ns, IGBT Type: PT, Supplier Device Package: TO-220 [K], Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APT15GP90KG | Microchip / Microsemi |
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IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
Produkt ist nicht verfügbar
Mindestbestellmenge: 95 Stücke
Im Einkaufswagen
Stück im Wert von UAH