Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11173) > Seite 163 nach 187
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MAP5KE6.0A | Microsemi Corporation |
 Description: TVS DIODE 6VWM 10.3VC DO204ALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 48.5A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MAP5KE48CAe3 | Microsemi Corporation |
Description: TVS DIODE 48VWM 77.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.5A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MAP5KE6.0CAe3 | Microsemi Corporation |
Description: TVS DIODE 6VWM 10.3VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 48.5A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete Grade: Military Qualification: MIL-PRF-19500 |
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MAP5KE8.5CAe3 | Microsemi Corporation |
Description: TVS DIODE 8.5VWM 14.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34.7A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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2N6782 | Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V |
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JAN2N6782 | Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V Grade: Military Qualification: MIL-PRF-19500/556 |
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| JANTXV2N6782 | Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A TO205AF Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-205AF (TO-39) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V |
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| JAN2N6782U | Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V Grade: Military Qualification: MIL-PRF-19500/556 |
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| 2N6782U | Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V |
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MP5KE13Ae3 | Microsemi Corporation |
Description: TVS DIODE 13VWM 21.5VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 23.2A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete Grade: Military Qualification: MIL-PRF-19500 |
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.jpg "SK38/TR13") |
SK38/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 80V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 80 V |
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SK38E3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 80V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 80 V |
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MXLP5KE54CAe3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete Grade: Military Qualification: MIL-PRF-19500 |
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| 58048 | Microsemi Corporation |
Description: RF POWER TRANSISTOR Packaging: Bulk Part Status: Obsolete |
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2N6768 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO3 Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
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| 2N6768T1 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
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| JANTXV2N6768T1 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
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| JAN2N6768T1 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
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| JANTXV2N6768 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO204AE Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AE (TO-3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
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| JAN2N6768 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO204AE Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Grade: Military Qualification: MIL-PRF-19500/543 |
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2N5099 | Microsemi Corporation |
Description: TRANS NPN 800V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-5 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 4 W |
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| JANTX1N4980C | Microsemi Corporation |
Description: DIODE ZENER 82V 5W E AXIAL Packaging: Bulk Tolerance: ±2% Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: E, Axial Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V Grade: Military Qualification: MIL-PRF-19500/435 |
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| 2N7225 | Microsemi Corporation |
Description: MOSFET N-CH 200V 27.4A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V |
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| 2N7227U | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
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| 2N7228 | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V |
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| 2N7227 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
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| 2N7228U | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V |
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| 2N7225U | Microsemi Corporation |
Description: MOSFET N-CH 200V 27.4A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V |
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| 2N7334 | Microsemi Corporation |
Description: MOSFET 4N-CH 100V 1A MO-036AB Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MO-036AB Part Status: Active |
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| 2N7335 | Microsemi Corporation |
Description: MOSFET 4P-CH 100V 0.75A MO-036AB Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MO-036AB Part Status: Obsolete |
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SMBJ5950BE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 110V 2W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SMBJ (DO-214AA) Part Status: Obsolete Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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SMBJ5950B/TR13 | Microsemi Corporation |
Description: DIODE ZENER 110V 2W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SMBJ (DO-214AA) Part Status: Obsolete Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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SMBJ5950CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 110V 2W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SMBJ (DO-214AA) Part Status: Obsolete Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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SMBJ5950A/TR13 | Microsemi Corporation |
Description: DIODE ZENER 110V 2W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SMBJ (DO-214AA) Part Status: Obsolete Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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SMBJ5333A/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.3V 5W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: SMBJ (DO-214AA) Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 300 µA @ 1 V |
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SMBJ5950AE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 110V 2W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SMBJ (DO-214AA) Part Status: Obsolete Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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| APTGV50H60T3G | Microsemi Corporation |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT, Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
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| APTGV50H60BG | Microsemi Corporation |
Description: IGBT MODULE 600V 80A 176W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Boost Chopper, Full Bridge Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP4 IGBT Type: NPT, Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
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| APT4016BVRG | Microsemi Corporation |
Description: MOSFET N-CH 400V TO-247 Packaging: Tube Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Part Status: Obsolete |
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MAP5KE85A | Microsemi Corporation |
Description: TVS DIODE 85VWM 137VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.6A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete Grade: Military Qualification: MIL-PRF-19500 |
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MAP5KE85CAe3 | Microsemi Corporation |
Description: TVS DIODE 85VWM 137VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.6A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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WP3262W6NFEI-320B2 | Microsemi Corporation |
Description: WINPATH3 262W6 PROC.320MHZ, LF Packaging: Tray Package / Case: 896-BGA, FCBGA Mounting Type: Surface Mount Interface: I²C, RMII, UART Program Memory Type: SRAM Applications: Network Processor Core Processor: MIPS32® 34Kc™ Supplier Device Package: 896-FCBGA (31x31) Part Status: Obsolete DigiKey Programmable: Not Verified |
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| MS1001 | Microsemi Corporation |
Description: RF TRANS NPN 18V 30MHZ M174 Packaging: Bulk Package / Case: M174 Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 13dB Power - Max: 270W Current - Collector (Ic) (Max): 20A Voltage - Collector Emitter Breakdown (Max): 18V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 30MHz Supplier Device Package: M174 Part Status: Obsolete |
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| MS1001A | Microsemi Corporation |
Description: TRANS RF BIPO 270W 20A Packaging: Bulk Part Status: Obsolete |
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LX8117A-33CST | Microsemi Corporation |
Description: IC REG LIN 3.3V 1A SOT223 POWER Packaging: Tube Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: SOT-223, Power Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete PSRR: 75dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A Protection Features: Over Current, Short Circuit |
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LX8117A-25CST | Microsemi Corporation |
Description: IC REG LIN 2.5V 1A SOT223 POWER Packaging: Tube Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: SOT-223, Power Voltage - Output (Min/Fixed): 2.5V Part Status: Obsolete PSRR: 75dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A Protection Features: Over Current, Short Circuit |
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LX8117A-28CST | Microsemi Corporation |
Description: IC REG LIN 2.85V 1A SOT223 POWER Packaging: Tube Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: SOT-223, Power Voltage - Output (Min/Fixed): 2.85V Part Status: Obsolete PSRR: 75dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A Protection Features: Over Current, Short Circuit |
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| APTGT75SK60T1G | Microsemi Corporation |
Description: IGBT MODULE 600V 100A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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1N5949Be3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949BP/TR12 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Tolerance: ±5% Packaging: Bag Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949CPE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949e3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949CG | Microsemi Corporation |
Description: DIODE ZENER 100V 1.25W DO204AL Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949AG | Microsemi Corporation |
Description: DIODE ZENER 100V 1.25W DO204AL Tolerance: ±10% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949DG | Microsemi Corporation |
Description: DIODE ZENER 100V 1.25W DO204AL Tolerance: ±1% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949CP/TR8 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949APE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949BPE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949PE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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1N5949CP/TR12 | Microsemi Corporation |
Description: DIODE ZENER 100V 1.5W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 76 V |
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| MAP5KE6.0A |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 6VWM 10.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 6VWM 10.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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| MAP5KE48CAe3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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| MAP5KE6.0CAe3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 6VWM 10.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 6VWM 10.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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| MAP5KE8.5CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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| 2N6782 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Description: MOSFET N-CH 100V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
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| JAN2N6782 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/556
Description: MOSFET N-CH 100V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/556
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| JANTXV2N6782 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Description: MOSFET N-CH 100V 3.5A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
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| JAN2N6782U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/556
Description: MOSFET N-CH 100V 3.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/556
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| 2N6782U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Description: MOSFET N-CH 100V 3.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
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| MP5KE13Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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| SK38/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 80V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
Description: DIODE SCHOTTKY 80V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
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| SK38E3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 80V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
Description: DIODE SCHOTTKY 80V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
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| MXLP5KE54CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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| 58048 |
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Packaging: Bulk
Part Status: Obsolete
Description: RF POWER TRANSISTOR
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N6768 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 400V 14A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
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Stück im Wert von UAH
| 2N6768T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
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| JANTXV2N6768T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
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Stück im Wert von UAH
| JAN2N6768T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
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Stück im Wert von UAH
| JANTXV2N6768 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE (TO-3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 400V 14A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE (TO-3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
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Stück im Wert von UAH
| JAN2N6768 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
Description: MOSFET N-CH 400V 14A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
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Stück im Wert von UAH
| 2N5099 |
Hersteller: Microsemi Corporation
Description: TRANS NPN 800V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 4 W
Description: TRANS NPN 800V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 4 W
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Stück im Wert von UAH
| JANTX1N4980C |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W E AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: E, Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 82V 5W E AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: E, Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N7225 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 27.4A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Description: MOSFET N-CH 200V 27.4A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
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| 2N7227U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 400V 14A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
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| 2N7228 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
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Stück im Wert von UAH
| 2N7227 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
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Stück im Wert von UAH
| 2N7228U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Description: MOSFET N-CH 500V 12A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
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Im Einkaufswagen
Stück im Wert von UAH
| 2N7225U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 27.4A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Description: MOSFET N-CH 200V 27.4A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
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Stück im Wert von UAH
| 2N7334 |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 100V 1A MO-036AB
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MO-036AB
Part Status: Active
Description: MOSFET 4N-CH 100V 1A MO-036AB
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MO-036AB
Part Status: Active
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Stück im Wert von UAH
| 2N7335 |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4P-CH 100V 0.75A MO-036AB
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MO-036AB
Part Status: Obsolete
Description: MOSFET 4P-CH 100V 0.75A MO-036AB
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MO-036AB
Part Status: Obsolete
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Stück im Wert von UAH
| SMBJ5950BE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ5950B/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ5950CE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ5950A/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ5333A/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.3V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Description: DIODE ZENER 3.3V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SMBJ5950AE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 2W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTGV50H60T3G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTGV50H60BG |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP4
IGBT Type: NPT, Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP4
IGBT Type: NPT, Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APT4016BVRG |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V TO-247
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Part Status: Obsolete
Description: MOSFET N-CH 400V TO-247
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAP5KE85A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 85VWM 137VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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| MAP5KE85CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 85VWM 137VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| WP3262W6NFEI-320B2 |
Hersteller: Microsemi Corporation
Description: WINPATH3 262W6 PROC.320MHZ, LF
Packaging: Tray
Package / Case: 896-BGA, FCBGA
Mounting Type: Surface Mount
Interface: I²C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-FCBGA (31x31)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: WINPATH3 262W6 PROC.320MHZ, LF
Packaging: Tray
Package / Case: 896-BGA, FCBGA
Mounting Type: Surface Mount
Interface: I²C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-FCBGA (31x31)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| MS1001 |
|
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 18V 30MHZ M174
Packaging: Bulk
Package / Case: M174
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 13dB
Power - Max: 270W
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: M174
Part Status: Obsolete
Description: RF TRANS NPN 18V 30MHZ M174
Packaging: Bulk
Package / Case: M174
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 13dB
Power - Max: 270W
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: M174
Part Status: Obsolete
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| MS1001A |
Hersteller: Microsemi Corporation
Description: TRANS RF BIPO 270W 20A
Packaging: Bulk
Part Status: Obsolete
Description: TRANS RF BIPO 270W 20A
Packaging: Bulk
Part Status: Obsolete
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| LX8117A-33CST |
|
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 1A SOT223 POWER
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-223, Power
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Short Circuit
Description: IC REG LIN 3.3V 1A SOT223 POWER
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-223, Power
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Short Circuit
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| LX8117A-25CST |
|
Hersteller: Microsemi Corporation
Description: IC REG LIN 2.5V 1A SOT223 POWER
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-223, Power
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Short Circuit
Description: IC REG LIN 2.5V 1A SOT223 POWER
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-223, Power
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Short Circuit
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| LX8117A-28CST |
|
Hersteller: Microsemi Corporation
Description: IC REG LIN 2.85V 1A SOT223 POWER
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-223, Power
Voltage - Output (Min/Fixed): 2.85V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Short Circuit
Description: IC REG LIN 2.85V 1A SOT223 POWER
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-223, Power
Voltage - Output (Min/Fixed): 2.85V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Short Circuit
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| APTGT75SK60T1G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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| 1N5949Be3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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| 1N5949BP/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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| 1N5949CPE3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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| 1N5949e3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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| 1N5949CG |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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| 1N5949AG |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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| 1N5949DG |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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| 1N5949CP/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Produkt ist nicht verfügbar
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| 1N5949APE3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Produkt ist nicht verfügbar
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| 1N5949BPE3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Produkt ist nicht verfügbar
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| 1N5949PE3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N5949CP/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Description: DIODE ZENER 100V 1.5W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Produkt ist nicht verfügbar
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