Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11173) > Seite 185 nach 187
| Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5374Ce3/TR8 | Microsemi Corporation |
 Description: DIODE ZENER 75V 5W T18Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 54 V |
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1N5374B | Microsemi Corporation |
Description: DIODE ZENER 75V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 54 V |
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| APTM20UM09SG | Microsemi Corporation |
Description: MOSFET N-CH 200V 195A MODULE Packaging: Bulk Package / Case: J3 Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 74.5A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: Module Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 217 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V |
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| APTM20DUM05TG | Microsemi Corporation |
Description: MOSFET 2N-CH 200V 333A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 333A Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: SP4 |
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| APTM20AM05FTG | Microsemi Corporation |
Description: MOSFET 2N-CH 200V 333A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 333A Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: SP4 |
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APT5F100K | Microsemi Corporation |
Description: MOSFET N-CH 1000V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 3A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-220 [K] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 25 V |
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APT6M100K | Microsemi Corporation |
Description: MOSFET N-CH 1000V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220 [K] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V |
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JANS2N2221A | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANS2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANS2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANSL2N2221A | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANSL2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANSP2N2221A | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANSP2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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| JANS2N2221AUA | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW Qualification: MIL-PRF-19500/255 |
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JANSH2N2221A | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANSH2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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| JANSH2N2221AUA | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW Qualification: MIL-PRF-19500/255 |
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JANSH2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANSH2N2221AUBC | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UBC Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UBC Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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Jantxv2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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1N5358B | Microsemi Corporation |
 Description: DIODE ZENER 22V 5W T18Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V |
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MXPLAD130KP275CA | Microsemi Corporation |
Description: TVS DIODE 275VWM 445VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C Applications: General Purpose Current - Peak Pulse (10/1000µs): 292A Voltage - Reverse Standoff (Typ): 275V (Max) Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 300V Voltage - Clamping (Max) @ Ipp: 445V Power - Peak Pulse: 130000W (130kW) Power Line Protection: No |
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MXPLAD130KP275CAE3 | Microsemi Corporation |
Description: TVS DIODE 275VWM 445VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C Applications: General Purpose Current - Peak Pulse (10/1000µs): 292A Voltage - Reverse Standoff (Typ): 275V (Max) Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 300V Voltage - Clamping (Max) @ Ipp: 445V Power - Peak Pulse: 130000W (130kW) Power Line Protection: No |
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MXPLAD130KP275CVE3 | Microsemi Corporation |
Description: TVS DIODE 275VWM 400VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C Applications: General Purpose Current - Peak Pulse (10/1000µs): 292A Voltage - Reverse Standoff (Typ): 275V (Max) Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 300V Voltage - Clamping (Max) @ Ipp: 400V Power - Peak Pulse: 130000W (130kW) Power Line Protection: No |
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| TPR1000 | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.09GHZ 55KV Packaging: Bulk Package / Case: 55KV Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 6dB Power - Max: 2900W Current - Collector (Ic) (Max): 80A Voltage - Collector Emitter Breakdown (Max): 65V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 1.09GHz Supplier Device Package: 55KV |
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LX8386A-33CDD | Microsemi Corporation |
Description: IC REG LIN 3.3V 1.5A TO263 PWR Packaging: Tube Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 10V Number of Regulators: 1 Supplier Device Package: TO-263, Power Voltage - Output (Min/Fixed): 3.3V PSRR: 83dB (120Hz) Voltage Dropout (Max): 1.3V @ 1.5A Protection Features: Over Current, Over Temperature |
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LX8386A-33CP | Microsemi Corporation |
Description: IC REG LIN 3.3V 1.5A TO220 PWR Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1.5A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 10V Number of Regulators: 1 Supplier Device Package: TO-220, Power Voltage - Output (Min/Fixed): 3.3V PSRR: 83dB (120Hz) Voltage Dropout (Max): 1.3V @ 1.5A Protection Features: Over Current, Over Temperature |
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| 681-2D, 2N, 2P | Microsemi Corporation |
Description: DIODE MODULE GP 200V 15A ND Packaging: Bulk Package / Case: Nd Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: Nd Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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MXLP5KE48A | Microsemi Corporation |
Description: TVS DIODE 48VWM 77.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.5A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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CPT30045 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 45V 150A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A Current - Reverse Leakage @ Vr: 4 mA @ 45 V |
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CPT30050 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 50V 150A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A Current - Reverse Leakage @ Vr: 4 mA @ 50 V |
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CPT50145 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 45V 250A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A Current - Reverse Leakage @ Vr: 12 mA @ 45 V |
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CPT30060 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 60V 150A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A Current - Reverse Leakage @ Vr: 4 mA @ 60 V |
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CPT600150D | Microsemi Corporation |
Description: DIODE MOD SCHOT 150V 300A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A Current - Reverse Leakage @ Vr: 7 mA @ 150 V |
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APT10043JVR | Microsemi Corporation |
Description: MOSFET N-CH 1000V 22A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tj) Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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JANSM2N3634 | Microsemi Corporation |
Description: TRANS PNP 140V 10UA TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
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JANSM2N3634L | Microsemi Corporation |
Description: TRANS PNP 140V 10UA TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: TO-5AA Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
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JANSP2N3634 | Microsemi Corporation |
Description: TRANS PNP 140V 10UA TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
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JANSP2N3634L | Microsemi Corporation |
Description: TRANS PNP 140V 10UA TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: TO-5AA Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
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JANSP2N3634UB | Microsemi Corporation |
Description: TRANS PNP 140V 10UA UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
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1.5KE47CA | Microsemi Corporation |
Description: TVS DIODE 40.2VWM 64.8VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 23.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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| 5817SMGE3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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| 5818SMGe3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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| 5817SMG/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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| 5818SMG/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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UC2844AD | Microsemi Corporation |
Description: IC REG CTRLR PWM CM 14-SOIC Packaging: Bag Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Buck, Flyback, Forward Voltage - Supply (Vcc/Vdd): 10V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Number of Outputs: 1 |
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1N5378B | Microsemi Corporation |
Description: DIODE ZENER 100V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 72 V |
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SMLJ40A | Microsemi Corporation |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Tube Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 46.4A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 300W Power Line Protection: No |
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1N5348B | Microsemi Corporation |
Description: DIODE ZENER 11V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 8 V |
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MXSMBG2K4.0 | Microsemi Corporation |
Description: TVS DIODE 4VWM 6.3VC DO214AA Packaging: Bulk Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 4V Supplier Device Package: DO-214AA (SMBG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 6.3V Power - Peak Pulse: 2000W (2kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXSMBJ2K3.3 | Microsemi Corporation |
Description: TVS DIODE 3.3VWM 5.8VC DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.6V Voltage - Clamping (Max) @ Ipp: 5.8V Power - Peak Pulse: 2000W (2kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| 1N6301e3/TR13 | Microsemi Corporation |
Description: TVS DIODE 138VWM 244VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 138V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 153V Voltage - Clamping (Max) @ Ipp: 244V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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| APTGT100A602G | Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP2 Packaging: Bulk Package / Case: SP2 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP2 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
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| APTGT100DH60T3G | Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Through Hole Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
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| UMA5817-T7 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE Packaging: Tape & Reel (TR) Package / Case: Ultramite™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Ultramite™ Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
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| UMA5818 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE Packaging: Tape & Reel (TR) Package / Case: Ultramite™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Ultramite™ Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
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1N4734A | Microsemi Corporation |
Description: DIODE ZENER 5.6V 1W DO204AL Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
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| JANTX1N4959D | Microsemi Corporation |
Description: DIODE ZENER 11V 5W E-AXIAL Tolerance: ±1% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: E, Axial Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V Qualification: MIL-PRF-19500/435 |
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JANTX1N4959DUS | Microsemi Corporation |
Description: DIODE ZENER 11V 5W D5B Tolerance: ±1% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V Qualification: MIL-PRF-19500/435 |
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| 1N5374Ce3/TR8 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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| 1N5374B |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Description: DIODE ZENER 75V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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| APTM20UM09SG |
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Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 195A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 74.5A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 217 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
Description: MOSFET N-CH 200V 195A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 74.5A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 217 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
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| APTM20DUM05TG |
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Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 200V 333A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 200V 333A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SP4
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| APTM20AM05FTG |
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Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 200V 333A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 200V 333A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SP4
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| APT5F100K |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 3A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 25 V
Description: MOSFET N-CH 1000V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 3A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 25 V
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| APT6M100K |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V
Description: MOSFET N-CH 1000V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V
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Stück im Wert von UAH
| JANS2N2221A |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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Stück im Wert von UAH
| JANS2N2221AUB |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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| JANS2N2221AL |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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Stück im Wert von UAH
| JANSL2N2221A |
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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Stück im Wert von UAH
| JANSL2N2221AL |
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSP2N2221A |
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSP2N2221AL |
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANS2N2221AUA |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSH2N2221A |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANSH2N2221AL |
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSH2N2221AUA |
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSH2N2221AUB |
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANSH2N2221AUBC |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UBC
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UBC
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Jantxv2N2221AUB |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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Stück im Wert von UAH
| 1N5358B | |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 22V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V
Description: DIODE ZENER 22V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MXPLAD130KP275CA |
Hersteller: Microsemi Corporation
Description: TVS DIODE 275VWM 445VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 292A
Voltage - Reverse Standoff (Typ): 275V (Max)
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 300V
Voltage - Clamping (Max) @ Ipp: 445V
Power - Peak Pulse: 130000W (130kW)
Power Line Protection: No
Description: TVS DIODE 275VWM 445VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 292A
Voltage - Reverse Standoff (Typ): 275V (Max)
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 300V
Voltage - Clamping (Max) @ Ipp: 445V
Power - Peak Pulse: 130000W (130kW)
Power Line Protection: No
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Stück im Wert von UAH
| MXPLAD130KP275CAE3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE 275VWM 445VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 292A
Voltage - Reverse Standoff (Typ): 275V (Max)
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 300V
Voltage - Clamping (Max) @ Ipp: 445V
Power - Peak Pulse: 130000W (130kW)
Power Line Protection: No
Description: TVS DIODE 275VWM 445VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 292A
Voltage - Reverse Standoff (Typ): 275V (Max)
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 300V
Voltage - Clamping (Max) @ Ipp: 445V
Power - Peak Pulse: 130000W (130kW)
Power Line Protection: No
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| MXPLAD130KP275CVE3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE 275VWM 400VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 292A
Voltage - Reverse Standoff (Typ): 275V (Max)
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 300V
Voltage - Clamping (Max) @ Ipp: 400V
Power - Peak Pulse: 130000W (130kW)
Power Line Protection: No
Description: TVS DIODE 275VWM 400VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 292A
Voltage - Reverse Standoff (Typ): 275V (Max)
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 300V
Voltage - Clamping (Max) @ Ipp: 400V
Power - Peak Pulse: 130000W (130kW)
Power Line Protection: No
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| TPR1000 |
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55KV
Packaging: Bulk
Package / Case: 55KV
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB
Power - Max: 2900W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55KV
Description: RF TRANS NPN 65V 1.09GHZ 55KV
Packaging: Bulk
Package / Case: 55KV
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB
Power - Max: 2900W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55KV
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| LX8386A-33CDD |
|
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 1.5A TO263 PWR
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-263, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.3V 1.5A TO263 PWR
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-263, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1.5A
Protection Features: Over Current, Over Temperature
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| LX8386A-33CP |
|
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 1.5A TO220 PWR
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.3V 1.5A TO220 PWR
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1.5A
Protection Features: Over Current, Over Temperature
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| 681-2D, 2N, 2P |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 200V 15A ND
Packaging: Bulk
Package / Case: Nd
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: Nd
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE MODULE GP 200V 15A ND
Packaging: Bulk
Package / Case: Nd
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: Nd
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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| MXLP5KE48A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| CPT30045 |
|
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 45V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
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| CPT30050 |
|
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 50V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
Description: DIODE MOD SCHOTT 50V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
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| CPT50145 |
|
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A
Current - Reverse Leakage @ Vr: 12 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A
Current - Reverse Leakage @ Vr: 12 mA @ 45 V
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| CPT30060 |
|
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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| CPT600150D |
|
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOT 150V 300A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A
Current - Reverse Leakage @ Vr: 7 mA @ 150 V
Description: DIODE MOD SCHOT 150V 300A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A
Current - Reverse Leakage @ Vr: 7 mA @ 150 V
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| APT10043JVR |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 22A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 1000V 22A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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| JANSM2N3634 |
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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| JANSM2N3634L |
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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| JANSP2N3634 |
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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| JANSP2N3634L |
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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| JANSP2N3634UB |
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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| 1.5KE47CA |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 40.2VWM 64.8VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 40.2VWM 64.8VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 5817SMGE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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| 5818SMGe3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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| 5817SMG/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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| 5818SMG/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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| UC2844AD | |
|
Hersteller: Microsemi Corporation
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Bag
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Bag
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
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| 1N5378B | |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Description: DIODE ZENER 100V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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| SMLJ40A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tube
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tube
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
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| 1N5348B | |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 8 V
Description: DIODE ZENER 11V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 8 V
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| MXSMBG2K4.0 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 4VWM 6.3VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 4VWM 6.3VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MXSMBJ2K3.3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 3.3VWM 5.8VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 3.3VWM 5.8VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| 1N6301e3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 138VWM 244VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 138VWM 244VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| APTGT100A602G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Description: IGBT MODULE 600V 150A 340W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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| APTGT100DH60T3G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Description: IGBT MODULE 600V 150A 340W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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| UMA5817-T7 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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| UMA5818 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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| 1N4734A |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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| JANTX1N4959D |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 11V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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| JANTX1N4959DUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 11V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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