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1N5934AG 1N5934AG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 24V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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1N5934CG 1N5934CG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 24V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Produkt ist nicht verfügbar
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1N5956BG 1N5956BG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 200V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Produkt ist nicht verfügbar
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HS24515E3 HS24515E3 Microsemi Corporation HS24510.pdf Description: DIODE SCHOTTKY 15V 240A HALF-PAK
Packaging: Tube
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: HALF-PAK
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A
Current - Reverse Leakage @ Vr: 150 mA @ 15 V
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1N5919BG 1N5919BG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.6V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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090-44550-01 Microsemi Corporation 1244700-mac-sa5x-data-sheet Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 8-DIP Module
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 75°C
Voltage - Supply: 4.5V ~ 32V
Differential - Input:Output: No/No
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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090-44500-000 Microsemi Corporation 1244700-mac-sa5x-data-sheet Description: EVAL BOARD FOR MAC-SA5X
Packaging: Bulk
Function: Miniature Atomic Clock (MAC)
Type: Timing
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: MAC-SA5X
Secondary Attributes: On-Board LEDs
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APTGT50DH60TG Microsemi Corporation APTGT50DH60TG.pdf Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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1N5345B 1N5345B Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 8.7V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V
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1N5356B 1N5356B Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 19V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
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JANTX1N4969C Microsemi Corporation 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 30V 5W E-AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
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A2F060M3E-FG256 A2F060M3E-FG256 Microsemi Corporation SmartFusion_cSoC_Rev13.pdf Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-FG256I A2F060M3E-FG256I Microsemi Corporation SmartFusion_cSoC_Rev13.pdf Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-FG256M A2F060M3E-FG256M Microsemi Corporation Military_SmartFusion_cSoC_Rev2.pdf Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -55°C ~ 125°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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1N5349B 1N5349B Microsemi Corporation 1N5333B-88B.pdf description Description: DIODE ZENER 12V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.52 EUR
Mindestbestellmenge: 3000
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1N5349B 1N5349B Microsemi Corporation 1N5333B-88B.pdf description Description: DIODE ZENER 12V 5W T18
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
auf Bestellung 7506 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
100+3.52 EUR
Mindestbestellmenge: 5
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MRF555 MRF555 Microsemi Corporation 9533-mrf555-datasheet Description: RF TRANS NPN 16V POWER MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 13dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Supplier Device Package: Power Macro
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MRF553T MRF553T Microsemi Corporation MRF553%28G%29.pdf Description: RF TRNS NPN 16V 175MHZ PWR MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: Power Macro
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MRF553G MRF553G Microsemi Corporation MRF553%28G%29.pdf Description: RF TRNS NPN 16V 175MHZ PWR MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 13dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: Power Macro
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MRF555T MRF555T Microsemi Corporation 9533-mrf555-datasheet Description: RF TRANS NPN 16V POWER MACRO
Packaging: Tape & Reel (TR)
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 12.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: Power Macro
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MRF555T MRF555T Microsemi Corporation 9533-mrf555-datasheet Description: RF TRANS NPN 16V POWER MACRO
Packaging: Cut Tape (CT)
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 12.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: Power Macro
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APT20M38BVFRG APT20M38BVFRG Microsemi Corporation High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 67A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
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APTC60AM42F2G Microsemi Corporation APTC60AM42F2G.pdf Description: MOSFET 2N-CH 600V 66A SP2
Packaging: Tray
Package / Case: SP2
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 66A
Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP2
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MP5KE8.5Ae3 MP5KE8.5Ae3 Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 8.5VWM 14.4V DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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A1280A-1PG176M Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Surface Mount
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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A1280A-PG176C Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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A1280A-1PG176B Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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A1280A-1PG176C Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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A1280A-PG176M Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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A1280A-PG176B Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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2N6382 Microsemi Corporation Description: TRANS PNP 120V 50A TO-63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 250 W
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LX8213-00ISE LX8213-00ISE Microsemi Corporation 9234-lx8213-datasheets Description: IC REG LIN POS ADJ 300MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 68dB ~ 54dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Temperature, Short Circuit, Soft Start
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1EZ150D/TR12 1EZ150D/TR12 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
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1EZ150D10/TR12 1EZ150D10/TR12 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
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1EZ150D10E3/TR12 1EZ150D10E3/TR12 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
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1EZ150D2/TR12 1EZ150D2/TR12 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D2E3/TR12 1EZ150D2E3/TR12 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D5/TR12 1EZ150D5/TR12 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D5E3/TR12 1EZ150D5E3/TR12 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150DE3/TR12 1EZ150DE3/TR12 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D/TR8 1EZ150D/TR8 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D10/TR8 1EZ150D10/TR8 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D10E3/TR8 1EZ150D10E3/TR8 Microsemi Corporation 11098-sd7a-datasheet Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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MSD75-08 MSD75-08 Microsemi Corporation 10544-msd75-rev1-datasheet Description: BRIDGE RECT 3PHASE 800V 75A SM2
Packaging: Bulk
Package / Case: M2
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SM2
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
Produkt ist nicht verfügbar
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MAPLAD6.5KP110Ae3 Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 110VWM 177VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD6.5KP110A Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 110VWM 177VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP110Ae3 MXLPLAD6.5KP110Ae3 Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP110A MXLPLAD6.5KP110A Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP110A MXPLAD6.5KP110A Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD6.5KP120Ae3 Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 120VWM 193VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP120A MXLPLAD6.5KP120A Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 120VWM 193VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP120A MXPLAD6.5KP120A Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 120VWM 193VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSFC160-16 MSFC160-16 Microsemi Corporation Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Screw Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 400 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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JANTX1N4474DUS JANTX1N4474DUS Microsemi Corporation 1N4460US-1N4496US.1N6485US-1NN6491US.pdf Description: DIODE ZENER 24V 1.5W D5A
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Qualification: MIL-PRF-19500/406
Produkt ist nicht verfügbar
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JANTX1N4968CUS JANTX1N4968CUS Microsemi Corporation 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 27V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Qualification: MIL-PRF-19500/435
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JANTX1N4968D Microsemi Corporation 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 27V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Qualification: MIL-PRF-19500/435
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JANTX1N4969D Microsemi Corporation 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 30V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
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SBT6050 Microsemi Corporation msc1526.pdf Description: DIODE SCHOTTKY 50V 60A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-204AE (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
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SMBJ6.5A SMBJ6.5A Microsemi Corporation SA3-37.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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0912-45 Microsemi Corporation 5599-0912-45-datasheet Description: RF TRANS NPN 60V 1.215GHZ 55CT
Packaging: Bulk
Package / Case: 55CT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB ~ 9dB
Power - Max: 225W
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: 55CT
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1N5934AG 1N5913BG_1N5956BG.pdf
1N5934AG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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1N5934CG 1N5913BG_1N5956BG.pdf
1N5934CG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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1N5956BG 1N5913BG_1N5956BG.pdf
1N5956BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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HS24515E3 HS24510.pdf
HS24515E3
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 15V 240A HALF-PAK
Packaging: Tube
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: HALF-PAK
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A
Current - Reverse Leakage @ Vr: 150 mA @ 15 V
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1N5919BG 1N5913BG_1N5956BG.pdf
1N5919BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Produkt ist nicht verfügbar
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090-44550-01 1244700-mac-sa5x-data-sheet
Hersteller: Microsemi Corporation
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 8-DIP Module
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 75°C
Voltage - Supply: 4.5V ~ 32V
Differential - Input:Output: No/No
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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090-44500-000 1244700-mac-sa5x-data-sheet
Hersteller: Microsemi Corporation
Description: EVAL BOARD FOR MAC-SA5X
Packaging: Bulk
Function: Miniature Atomic Clock (MAC)
Type: Timing
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: MAC-SA5X
Secondary Attributes: On-Board LEDs
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APTGT50DH60TG APTGT50DH60TG.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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1N5345B 1N5333B-88B.pdf
1N5345B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 8.7V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V
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1N5356B 1N5333B-88B.pdf
1N5356B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 19V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
Produkt ist nicht verfügbar
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JANTX1N4969C 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
Hersteller: Microsemi Corporation
Description: DIODE ZENER 30V 5W E-AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
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A2F060M3E-FG256 SmartFusion_cSoC_Rev13.pdf
A2F060M3E-FG256
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
Produkt ist nicht verfügbar
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A2F060M3E-FG256I SmartFusion_cSoC_Rev13.pdf
A2F060M3E-FG256I
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-FG256M Military_SmartFusion_cSoC_Rev2.pdf
A2F060M3E-FG256M
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -55°C ~ 125°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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1N5349B description 1N5333B-88B.pdf
1N5349B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.52 EUR
Mindestbestellmenge: 3000
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1N5349B description 1N5333B-88B.pdf
1N5349B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 5W T18
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
auf Bestellung 7506 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
100+3.52 EUR
Mindestbestellmenge: 5
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MRF555 9533-mrf555-datasheet
MRF555
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 13dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Supplier Device Package: Power Macro
Produkt ist nicht verfügbar
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MRF553T MRF553%28G%29.pdf
MRF553T
Hersteller: Microsemi Corporation
Description: RF TRNS NPN 16V 175MHZ PWR MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: Power Macro
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MRF553G MRF553%28G%29.pdf
MRF553G
Hersteller: Microsemi Corporation
Description: RF TRNS NPN 16V 175MHZ PWR MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 13dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: Power Macro
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MRF555T 9533-mrf555-datasheet
MRF555T
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Tape & Reel (TR)
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 12.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: Power Macro
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MRF555T 9533-mrf555-datasheet
MRF555T
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Cut Tape (CT)
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 12.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: Power Macro
Produkt ist nicht verfügbar
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APT20M38BVFRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT20M38BVFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 67A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
Produkt ist nicht verfügbar
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APTC60AM42F2G APTC60AM42F2G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 66A SP2
Packaging: Tray
Package / Case: SP2
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 66A
Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP2
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MP5KE8.5Ae3 MP5KE5.0A-170CA%28e3%29.pdf
MP5KE8.5Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4V DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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A1280A-1PG176M 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Surface Mount
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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A1280A-PG176C 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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A1280A-1PG176B 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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A1280A-1PG176C 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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A1280A-PG176M 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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A1280A-PG176B 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2N6382
Hersteller: Microsemi Corporation
Description: TRANS PNP 120V 50A TO-63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 250 W
Produkt ist nicht verfügbar
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LX8213-00ISE 9234-lx8213-datasheets
LX8213-00ISE
Hersteller: Microsemi Corporation
Description: IC REG LIN POS ADJ 300MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 68dB ~ 54dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Temperature, Short Circuit, Soft Start
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1EZ150D/TR12 11098-sd7a-datasheet
1EZ150D/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D10/TR12 11098-sd7a-datasheet
1EZ150D10/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D10E3/TR12 11098-sd7a-datasheet
1EZ150D10E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
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1EZ150D2/TR12 11098-sd7a-datasheet
1EZ150D2/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
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1EZ150D2E3/TR12 11098-sd7a-datasheet
1EZ150D2E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D5/TR12 11098-sd7a-datasheet
1EZ150D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D5E3/TR12 11098-sd7a-datasheet
1EZ150D5E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
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1EZ150DE3/TR12 11098-sd7a-datasheet
1EZ150DE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D/TR8 11098-sd7a-datasheet
1EZ150D/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D10/TR8 11098-sd7a-datasheet
1EZ150D10/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
Produkt ist nicht verfügbar
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1EZ150D10E3/TR8 11098-sd7a-datasheet
1EZ150D10E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 114 V
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MSD75-08 10544-msd75-rev1-datasheet
MSD75-08
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 75A SM2
Packaging: Bulk
Package / Case: M2
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SM2
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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MAPLAD6.5KP110Ae3 rf01083_rev_b.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 110VWM 177VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD6.5KP110A rf01083_rev_b.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 110VWM 177VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP110Ae3 rf01083_rev_b.pdf
MXLPLAD6.5KP110Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP110A rf01083_rev_b.pdf
MXLPLAD6.5KP110A
Hersteller: Microsemi Corporation
Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP110A rf01083_rev_b.pdf
MXPLAD6.5KP110A
Hersteller: Microsemi Corporation
Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD6.5KP120Ae3 rf01083_rev_b.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP120A rf01083_rev_b.pdf
MXLPLAD6.5KP120A
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP120A rf01083_rev_b.pdf
MXPLAD6.5KP120A
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSFC160-16
MSFC160-16
Hersteller: Microsemi Corporation
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Screw Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 400 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - Off State: 1.6 kV
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JANTX1N4474DUS 1N4460US-1N4496US.1N6485US-1NN6491US.pdf
JANTX1N4474DUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 1.5W D5A
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Qualification: MIL-PRF-19500/406
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JANTX1N4968CUS 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
JANTX1N4968CUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 27V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Qualification: MIL-PRF-19500/435
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JANTX1N4968D 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
Hersteller: Microsemi Corporation
Description: DIODE ZENER 27V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Qualification: MIL-PRF-19500/435
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JANTX1N4969D 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
Hersteller: Microsemi Corporation
Description: DIODE ZENER 30V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
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SBT6050 msc1526.pdf
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 50V 60A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-204AE (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
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SMBJ6.5A SA3-37.pdf
SMBJ6.5A
Hersteller: Microsemi Corporation
Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: Yes
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0912-45 5599-0912-45-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 60V 1.215GHZ 55CT
Packaging: Bulk
Package / Case: 55CT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB ~ 9dB
Power - Max: 225W
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: 55CT
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