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TPR1000 Microsemi Corporation Description: RF TRANS NPN 65V 1.09GHZ 55KV
Packaging: Bulk
Package / Case: 55KV
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB
Power - Max: 2900W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55KV
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LX8386A-33CDD LX8386A-33CDD Microsemi Corporation LX8386%5B1%5D.pdf Description: IC REG LIN 3.3V 1.5A TO263 PWR
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-263, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1.5A
Protection Features: Over Current, Over Temperature
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LX8386A-33CP LX8386A-33CP Microsemi Corporation LX8386%5B1%5D.pdf Description: IC REG LIN 3.3V 1.5A TO220 PWR
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1.5A
Protection Features: Over Current, Over Temperature
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681-2D, 2N, 2P Microsemi Corporation 11557-wt3-27-datasheet Description: DIODE MODULE GP 200V 15A ND
Packaging: Bulk
Package / Case: Nd
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: Nd
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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MXLP5KE48A MXLP5KE48A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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CPT30045 CPT30045 Microsemi Corporation CPT30035-CPT30050.pdf Description: DIODE MOD SCHOTT 45V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
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CPT30050 CPT30050 Microsemi Corporation CPT30035-CPT30050.pdf Description: DIODE MOD SCHOTT 50V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
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CPT50145 CPT50145 Microsemi Corporation CPT50130-50145.pdf Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A
Current - Reverse Leakage @ Vr: 12 mA @ 45 V
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CPT30060 CPT30060 Microsemi Corporation CPT30060.pdf Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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CPT600150D CPT600150D Microsemi Corporation CPT600120-CPT600150_Dwg.pdf Description: DIODE MOD SCHOT 150V 300A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A
Current - Reverse Leakage @ Vr: 7 mA @ 150 V
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APT10043JVR APT10043JVR Microsemi Corporation 6547-apt10043jvr-datasheet Description: MOSFET N-CH 1000V 22A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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JANSM2N3634 JANSM2N3634 Microsemi Corporation Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSM2N3634L JANSM2N3634L Microsemi Corporation Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3634 JANSP2N3634 Microsemi Corporation Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3634L JANSP2N3634L Microsemi Corporation Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3634UB JANSP2N3634UB Microsemi Corporation Description: TRANS PNP 140V 10UA UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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1.5KE47CA 1.5KE47CA Microsemi Corporation RF01008_rE.pdf Description: TVS DIODE 40.2VWM 64.8VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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5817SMGE3/TR13 Microsemi Corporation 5817SMG-5819SMG.pdf Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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5818SMGe3/TR13 Microsemi Corporation 5817SMG-5819SMG.pdf Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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5817SMG/TR13 Microsemi Corporation 5817SMG-5819SMG.pdf Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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5818SMG/TR13 Microsemi Corporation 5817SMG-5819SMG.pdf Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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UC2844AD UC2844AD Microsemi Corporation 11286-uc184xa-pdf description Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Bag
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
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1N5378B 1N5378B Microsemi Corporation 5850-1n5333b-88b-datasheet description Description: DIODE ZENER 100V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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SMLJ40A SMLJ40A Microsemi Corporation 10870-sa3-47-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tube
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
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1N5348B 1N5348B Microsemi Corporation 1N5333B-88B.pdf description Description: DIODE ZENER 11V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 8 V
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MXSMBG2K4.0 MXSMBG2K4.0 Microsemi Corporation MSMB%28G%2CJ%292K3.0%20-%205.0.pdf Description: TVS DIODE 4VWM 6.3VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMBJ2K3.3 MXSMBJ2K3.3 Microsemi Corporation MSMB%28G%2CJ%292K3.0%20-%205.0.pdf Description: TVS DIODE 3.3VWM 5.8VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N6301e3/TR13 Microsemi Corporation DS_278_1.5KE%20Series.pdf Description: TVS DIODE 138VWM 244VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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APTGT100A602G Microsemi Corporation Description: IGBT MODULE 600V 150A 340W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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APTGT100DH60T3G Microsemi Corporation Description: IGBT MODULE 600V 150A 340W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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UMA5817-T7 Microsemi Corporation UMA5817-19.pdf Description: DIODE SCHOTTKY 20V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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UMA5818 Microsemi Corporation UMA5817-19.pdf Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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1N4734A 1N4734A Microsemi Corporation 10912-sa5-35-datasheet Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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JANTX1N4959D Microsemi Corporation 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 11V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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JANTX1N4959DUS JANTX1N4959DUS Microsemi Corporation 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 11V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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APTGT75TA60PG Microsemi Corporation Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
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SBT2535 SBT2535 Microsemi Corporation Description: DIODE SCHOTTKY 35V 25A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
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MAPLAD6.5KP150Ae3 Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD6.5KP150A Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP150Ae3 MXLPLAD6.5KP150Ae3 Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP150A MXLPLAD6.5KP150A Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP150A MXPLAD6.5KP150A Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSKD36-08 MSKD36-08 Microsemi Corporation MSKD%2CMSAD%2CMSCD36.pdf Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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MSAD36-08 Microsemi Corporation MSKD%2CMSAD%2CMSCD36.pdf Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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1N5934AG 1N5934AG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Produkt ist nicht verfügbar
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1N5934CG 1N5934CG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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1N5956BG 1N5956BG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 200V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Produkt ist nicht verfügbar
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HS24515E3 HS24515E3 Microsemi Corporation HS24510.pdf Description: DIODE SCHOTTKY 15V 240A HALF-PAK
Packaging: Tube
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: HALF-PAK
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A
Current - Reverse Leakage @ Vr: 150 mA @ 15 V
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1N5919BG 1N5919BG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.6V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Produkt ist nicht verfügbar
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090-44550-01 Microsemi Corporation 1244700-mac-sa5x-data-sheet Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 8-DIP Module
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 75°C
Voltage - Supply: 4.5V ~ 32V
Differential - Input:Output: No/No
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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090-44500-000 Microsemi Corporation 1244700-mac-sa5x-data-sheet Description: EVAL BOARD FOR MAC-SA5X
Packaging: Bulk
Function: Miniature Atomic Clock (MAC)
Type: Timing
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: MAC-SA5X
Secondary Attributes: On-Board LEDs
Produkt ist nicht verfügbar
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APTGT50DH60TG Microsemi Corporation APTGT50DH60TG.pdf Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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1N5345B 1N5345B Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 8.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V
Produkt ist nicht verfügbar
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1N5356B 1N5356B Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 19V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
Produkt ist nicht verfügbar
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JANTX1N4969C Microsemi Corporation 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 30V 5W E-AXIAL
Tolerance: ±2%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
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A2F060M3E-FG256 A2F060M3E-FG256 Microsemi Corporation SmartFusion_cSoC_Rev13.pdf Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-FG256I A2F060M3E-FG256I Microsemi Corporation SmartFusion_cSoC_Rev13.pdf Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-FG256M A2F060M3E-FG256M Microsemi Corporation Military_SmartFusion_cSoC_Rev2.pdf Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -55°C ~ 125°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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1N5349B 1N5349B Microsemi Corporation 1N5333B-88B.pdf description Description: DIODE ZENER 12V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.52 EUR
Mindestbestellmenge: 3000
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1N5349B 1N5349B Microsemi Corporation 1N5333B-88B.pdf description Description: DIODE ZENER 12V 5W T18
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
auf Bestellung 7909 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.8 EUR
100+3.52 EUR
Mindestbestellmenge: 5
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TPR1000
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55KV
Packaging: Bulk
Package / Case: 55KV
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB
Power - Max: 2900W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55KV
Produkt ist nicht verfügbar
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LX8386A-33CDD LX8386%5B1%5D.pdf
LX8386A-33CDD
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 1.5A TO263 PWR
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-263, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1.5A
Protection Features: Over Current, Over Temperature
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LX8386A-33CP LX8386%5B1%5D.pdf
LX8386A-33CP
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 1.5A TO220 PWR
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1.5A
Protection Features: Over Current, Over Temperature
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681-2D, 2N, 2P 11557-wt3-27-datasheet
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 200V 15A ND
Packaging: Bulk
Package / Case: Nd
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: Nd
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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MXLP5KE48A 11043-p5ke-datasheet
MXLP5KE48A
Hersteller: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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CPT30045 CPT30035-CPT30050.pdf
CPT30045
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 45V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
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CPT30050 CPT30035-CPT30050.pdf
CPT30050
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 50V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
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CPT50145 CPT50130-50145.pdf
CPT50145
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A
Current - Reverse Leakage @ Vr: 12 mA @ 45 V
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CPT30060 CPT30060.pdf
CPT30060
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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CPT600150D CPT600120-CPT600150_Dwg.pdf
CPT600150D
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOT 150V 300A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A
Current - Reverse Leakage @ Vr: 7 mA @ 150 V
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APT10043JVR 6547-apt10043jvr-datasheet
APT10043JVR
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 22A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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JANSM2N3634
JANSM2N3634
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSM2N3634L
JANSM2N3634L
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3634
JANSP2N3634
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3634L
JANSP2N3634L
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3634UB
JANSP2N3634UB
Hersteller: Microsemi Corporation
Description: TRANS PNP 140V 10UA UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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1.5KE47CA RF01008_rE.pdf
1.5KE47CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 40.2VWM 64.8VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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5817SMGE3/TR13 5817SMG-5819SMG.pdf
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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5818SMGe3/TR13 5817SMG-5819SMG.pdf
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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5817SMG/TR13 5817SMG-5819SMG.pdf
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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5818SMG/TR13 5817SMG-5819SMG.pdf
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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UC2844AD description 11286-uc184xa-pdf
UC2844AD
Hersteller: Microsemi Corporation
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Bag
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
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1N5378B description 5850-1n5333b-88b-datasheet
1N5378B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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SMLJ40A 10870-sa3-47-datasheet
SMLJ40A
Hersteller: Microsemi Corporation
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tube
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
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1N5348B description 1N5333B-88B.pdf
1N5348B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 8 V
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MXSMBG2K4.0 MSMB%28G%2CJ%292K3.0%20-%205.0.pdf
MXSMBG2K4.0
Hersteller: Microsemi Corporation
Description: TVS DIODE 4VWM 6.3VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMBJ2K3.3 MSMB%28G%2CJ%292K3.0%20-%205.0.pdf
MXSMBJ2K3.3
Hersteller: Microsemi Corporation
Description: TVS DIODE 3.3VWM 5.8VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N6301e3/TR13 DS_278_1.5KE%20Series.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 138VWM 244VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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APTGT100A602G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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APTGT100DH60T3G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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UMA5817-T7 UMA5817-19.pdf
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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UMA5818 UMA5817-19.pdf
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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1N4734A 10912-sa5-35-datasheet
1N4734A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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JANTX1N4959D 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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JANTX1N4959DUS 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
JANTX1N4959DUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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APTGT75TA60PG
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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SBT2535
SBT2535
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 35V 25A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
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MAPLAD6.5KP150Ae3 rf01083_rev_b.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD6.5KP150A rf01083_rev_b.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP150Ae3 rf01083_rev_b.pdf
MXLPLAD6.5KP150Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP150A rf01083_rev_b.pdf
MXLPLAD6.5KP150A
Hersteller: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP150A rf01083_rev_b.pdf
MXPLAD6.5KP150A
Hersteller: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSKD36-08 MSKD%2CMSAD%2CMSCD36.pdf
MSKD36-08
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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MSAD36-08 MSKD%2CMSAD%2CMSCD36.pdf
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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1N5934AG 1N5913BG_1N5956BG.pdf
1N5934AG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Produkt ist nicht verfügbar
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1N5934CG 1N5913BG_1N5956BG.pdf
1N5934CG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Produkt ist nicht verfügbar
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1N5956BG 1N5913BG_1N5956BG.pdf
1N5956BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Produkt ist nicht verfügbar
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HS24515E3 HS24510.pdf
HS24515E3
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 15V 240A HALF-PAK
Packaging: Tube
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: HALF-PAK
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A
Current - Reverse Leakage @ Vr: 150 mA @ 15 V
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1N5919BG 1N5913BG_1N5956BG.pdf
1N5919BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Produkt ist nicht verfügbar
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090-44550-01 1244700-mac-sa5x-data-sheet
Hersteller: Microsemi Corporation
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 8-DIP Module
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 75°C
Voltage - Supply: 4.5V ~ 32V
Differential - Input:Output: No/No
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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090-44500-000 1244700-mac-sa5x-data-sheet
Hersteller: Microsemi Corporation
Description: EVAL BOARD FOR MAC-SA5X
Packaging: Bulk
Function: Miniature Atomic Clock (MAC)
Type: Timing
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: MAC-SA5X
Secondary Attributes: On-Board LEDs
Produkt ist nicht verfügbar
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APTGT50DH60TG APTGT50DH60TG.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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1N5345B 1N5333B-88B.pdf
1N5345B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 8.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V
Produkt ist nicht verfügbar
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1N5356B 1N5333B-88B.pdf
1N5356B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 19V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
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JANTX1N4969C 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
Hersteller: Microsemi Corporation
Description: DIODE ZENER 30V 5W E-AXIAL
Tolerance: ±2%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
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A2F060M3E-FG256 SmartFusion_cSoC_Rev13.pdf
A2F060M3E-FG256
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-FG256I SmartFusion_cSoC_Rev13.pdf
A2F060M3E-FG256I
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-FG256M Military_SmartFusion_cSoC_Rev2.pdf
A2F060M3E-FG256M
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -55°C ~ 125°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
Produkt ist nicht verfügbar
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1N5349B description 1N5333B-88B.pdf
1N5349B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.52 EUR
Mindestbestellmenge: 3000
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1N5349B description 1N5333B-88B.pdf
1N5349B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 5W T18
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
auf Bestellung 7909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.8 EUR
100+3.52 EUR
Mindestbestellmenge: 5
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