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P6KE20CAE3/TR13 P6KE20CAE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 17.1VWM 27.7VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6KE350AE3/TR13 P6KE350AE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 300VWM 482VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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APT75GN60B2DQ3G APT75GN60B2DQ3G Microsemi Corporation Description: IGBT 600V 155A 536W TO264
Produkt ist nicht verfügbar
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SK310AE3/TR13 Microsemi Corporation Description: DIODE SCHOTTKY 3A 100V SMAJ
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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1N4753AG 1N4753AG Microsemi Corporation 10912-sa5-35-datasheet Description: DIODE ZENER 36V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
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MS652S Microsemi Corporation 123532-ms652datasheet-reva-pdf Description: RF TRANS NPN 16V 512MHZ M123
Packaging: Bulk
Package / Case: M123
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 25W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 450MHz ~ 512MHz
Supplier Device Package: M123
Part Status: Obsolete
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P6KE18CAE3/TR13 P6KE18CAE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 15.3VWM 25.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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1.5KE350AE3/TR13 1.5KE350AE3/TR13 Microsemi Corporation RF01008_rE.pdf Description: TVS DIODE 300VWM 482VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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SD1526-01 Microsemi Corporation 11024-sd1526-01-rev-datasheet Description: RF TRANS NPN 45V 1.215GHZ M115
Packaging: Bulk
Package / Case: M115
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9.5dB
Power - Max: 21.9W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M115
Part Status: Obsolete
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P6KE15AE3/TR13 P6KE15AE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 12.8VWM 21.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE39CAE3/TR13 P6KE39CAE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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1N5337/TR12 1N5337/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5337A/TR12 1N5337A/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5337AE3/TR12 1N5337AE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337AE3/TR13 1N5337AE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337B/TR12 1N5337B/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5337BE3/TR12 1N5337BE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337BE3/TR13 1N5337BE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337C/TR12 1N5337C/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337CE3/TR12 1N5337CE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337CE3/TR13 1N5337CE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337E3/TR12 1N5337E3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337E3/TR13 1N5337E3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337/TR8 1N5337/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337A/TR8 1N5337A/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337AE3/TR8 1N5337AE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337B/TR8 1N5337B/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337BE3/TR8 1N5337BE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337C/TR8 1N5337C/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337CE3/TR8 1N5337CE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337E3/TR8 1N5337E3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5248C 1N5248C Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 18V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Produkt ist nicht verfügbar
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1N5248A (DO-35) 1N5248A (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 18V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13.3 V
Produkt ist nicht verfügbar
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1214-32L Microsemi Corporation 5719-1214-32lr5-datasheet Description: RF TRANS NPN 50V 1.4GHZ 55AW-1
Packaging: Bulk
Package / Case: 55AW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7.8dB ~ 8.9dB
Power - Max: 125W
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Supplier Device Package: 55AW-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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MRF559G MRF559G Microsemi Corporation MRF559(G).pdf Description: RF TRANS NPN 16V 870MHZ MICRO X
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MRF559 Microsemi Corporation 9535-mrf559reva-datasheet Description: RF TRANS NPN 16V 870MHZ MACRO X
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MRF559GT Microsemi Corporation Description: RF TRANS NPN 16V 870MHZ
Produkt ist nicht verfügbar
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MRF559T Microsemi Corporation Description: RF TRANS NPN 16V 870MHZ
Produkt ist nicht verfügbar
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MRF8372 MRF8372 Microsemi Corporation 9543-mrf8372r1r2reva-datasheet Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
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MRF8372G MRF8372G Microsemi Corporation 9543-mrf8372r1r2reva-datasheet Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
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MRF8372GR1 MRF8372GR1 Microsemi Corporation 9543-mrf8372r1r2reva-datasheet Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
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MRF8372GR2 MRF8372GR2 Microsemi Corporation 9543-mrf8372r1r2reva-datasheet Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
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MRF8372R1 MRF8372R1 Microsemi Corporation 9543-mrf8372r1r2reva-datasheet Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
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MRF8372R2 MRF8372R2 Microsemi Corporation 9543-mrf8372r1r2reva-datasheet Description: RF TRANS NPN 16V 870MHZ 8SO
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UC2844AM UC2844AM Microsemi Corporation 11286-uc184xa-pdf Description: IC REG CTRLR PWM CM 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
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1N5261A(DO-35) 1N5261A(DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 47V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Produkt ist nicht verfügbar
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1N5261A (DO-35) 1N5261A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 47V 500MW DO35
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1N5261B (DO-35) 1N5261B (DO-35) Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 47V 500MW DO35
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1N5260BDO35 1N5260BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 43V 500MW DO35
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1N5260BDO35E3 1N5260BDO35E3 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 43V 500MW DO35
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1N5260BDO35E3 1N5260BDO35E3 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 43V 500MW DO35
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1N5260A (DO-35) 1N5260A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 43V 500MW DO35
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1N5260B (DO-35) 1N5260B (DO-35) Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 43V 500MW DO35
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APTM120A65FT1G Microsemi Corporation APTM120A65FT1G.pdf Description: MOSFET 2N-CH 1200V 16A SP1
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APTM120A80FT1G Microsemi Corporation APTM120A80FT1G.pdf Description: MOSFET 2N-CH 1200V 14A SP1
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APTM120DA15G Microsemi Corporation APTM120DA15G.pdf Description: MOSFET N-CH 1200V 60A SP6
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APTM120DA29TG Microsemi Corporation APTM120DA29TG.pdf Description: MOSFET N-CH 1200V 34A SP4
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APTM120DA56T1G Microsemi Corporation Description: MOSFET N-CH 1200V 18A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 25 V
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APTM120DA68T1G Microsemi Corporation APTM120DA68T1G.pdf Description: MOSFET N-CH 1200V 15A SP1
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APTM120DDA57T3G Microsemi Corporation APTM120DDA57T3G.pdf Description: MOSFET 2N-CH 1200V 17A SP3
Produkt ist nicht verfügbar
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P6KE20CAE3/TR13 rf01007_rb.pdf
P6KE20CAE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 17.1VWM 27.7VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6KE350AE3/TR13 rf01007_rb.pdf
P6KE350AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 300VWM 482VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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APT75GN60B2DQ3G
APT75GN60B2DQ3G
Hersteller: Microsemi Corporation
Description: IGBT 600V 155A 536W TO264
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SK310AE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 100V SMAJ
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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1N4753AG 10912-sa5-35-datasheet
1N4753AG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 36V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
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MS652S 123532-ms652datasheet-reva-pdf
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 512MHZ M123
Packaging: Bulk
Package / Case: M123
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 25W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 450MHz ~ 512MHz
Supplier Device Package: M123
Part Status: Obsolete
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P6KE18CAE3/TR13 rf01007_rb.pdf
P6KE18CAE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 15.3VWM 25.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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1.5KE350AE3/TR13 RF01008_rE.pdf
1.5KE350AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 300VWM 482VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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SD1526-01 11024-sd1526-01-rev-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 45V 1.215GHZ M115
Packaging: Bulk
Package / Case: M115
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9.5dB
Power - Max: 21.9W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M115
Part Status: Obsolete
Produkt ist nicht verfügbar
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P6KE15AE3/TR13 rf01007_rb.pdf
P6KE15AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 12.8VWM 21.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P6KE39CAE3/TR13 rf01007_rb.pdf
P6KE39CAE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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1N5337/TR12 1N5333B-88B.pdf
1N5337/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337A/TR12 1N5333B-88B.pdf
1N5337A/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337AE3/TR12 1N5333B-88B.pdf
1N5337AE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337AE3/TR13 1N5333B-88B.pdf
1N5337AE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337B/TR12 1N5333B-88B.pdf
1N5337B/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337BE3/TR12 1N5333B-88B.pdf
1N5337BE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337BE3/TR13 1N5333B-88B.pdf
1N5337BE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337C/TR12 1N5333B-88B.pdf
1N5337C/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337CE3/TR12 1N5333B-88B.pdf
1N5337CE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337CE3/TR13 1N5333B-88B.pdf
1N5337CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337E3/TR12 1N5333B-88B.pdf
1N5337E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337E3/TR13 1N5333B-88B.pdf
1N5337E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337/TR8 1N5333B-88B.pdf
1N5337/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337A/TR8 1N5333B-88B.pdf
1N5337A/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337AE3/TR8 1N5333B-88B.pdf
1N5337AE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337B/TR8 1N5333B-88B.pdf
1N5337B/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337BE3/TR8 1N5333B-88B.pdf
1N5337BE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337C/TR8 1N5333B-88B.pdf
1N5337C/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337CE3/TR8 1N5333B-88B.pdf
1N5337CE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5337E3/TR8 1N5333B-88B.pdf
1N5337E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5248C 1N5221 - 1N5281B, e3 DO-35.pdf
1N5248C
Hersteller: Microsemi Corporation
Description: DIODE ZENER 18V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Produkt ist nicht verfügbar
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1N5248A (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5248A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 18V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13.3 V
Produkt ist nicht verfügbar
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1214-32L 5719-1214-32lr5-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 50V 1.4GHZ 55AW-1
Packaging: Bulk
Package / Case: 55AW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7.8dB ~ 8.9dB
Power - Max: 125W
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Supplier Device Package: 55AW-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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MRF559G MRF559(G).pdf
MRF559G
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ MICRO X
Produkt ist nicht verfügbar
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MRF559 9535-mrf559reva-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ MACRO X
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MRF559GT
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ
Produkt ist nicht verfügbar
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MRF559T
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ
Produkt ist nicht verfügbar
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MRF8372 9543-mrf8372r1r2reva-datasheet
MRF8372
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MRF8372G 9543-mrf8372r1r2reva-datasheet
MRF8372G
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MRF8372GR1 9543-mrf8372r1r2reva-datasheet
MRF8372GR1
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MRF8372GR2 9543-mrf8372r1r2reva-datasheet
MRF8372GR2
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MRF8372R1 9543-mrf8372r1r2reva-datasheet
MRF8372R1
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 870MHz
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MRF8372R2 9543-mrf8372r1r2reva-datasheet
MRF8372R2
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 16V 870MHZ 8SO
Produkt ist nicht verfügbar
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UC2844AM 11286-uc184xa-pdf
UC2844AM
Hersteller: Microsemi Corporation
Description: IC REG CTRLR PWM CM 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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1N5261A(DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5261A(DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Produkt ist nicht verfügbar
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1N5261A (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5261A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 500MW DO35
Produkt ist nicht verfügbar
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1N5261B (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5261B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 500MW DO35
Produkt ist nicht verfügbar
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1N5260BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5260BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
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1N5260BDO35E3 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5260BDO35E3
Hersteller: Microsemi Corporation
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
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1N5260BDO35E3 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5260BDO35E3
Hersteller: Microsemi Corporation
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
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1N5260A (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5260A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
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1N5260B (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5260B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
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APTM120A65FT1G APTM120A65FT1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1200V 16A SP1
Produkt ist nicht verfügbar
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APTM120A80FT1G APTM120A80FT1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1200V 14A SP1
Produkt ist nicht verfügbar
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APTM120DA15G APTM120DA15G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 60A SP6
Produkt ist nicht verfügbar
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APTM120DA29TG APTM120DA29TG.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 34A SP4
Produkt ist nicht verfügbar
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APTM120DA56T1G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 25 V
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APTM120DA68T1G APTM120DA68T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 15A SP1
Produkt ist nicht verfügbar
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APTM120DDA57T3G APTM120DDA57T3G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1200V 17A SP3
Produkt ist nicht verfügbar
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