APT60M80JVR
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Technische Details APT60M80JVR
Description: MOSFET N-CH 600V 55A ISOTOP, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 870 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOTOP®, Vgs(th) (Max) @ Id: 4V @ 5mA, Power Dissipation (Max): 568W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote APT60M80JVR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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APT60M80JVR | Microsemi Corporation |
Description: MOSFET N-CH 600V 55A ISOTOP Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 870 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOTOP® Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT60M80JVR |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 55A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 870 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 600V 55A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 870 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen
Stück im Wert von UAH