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SBR12045R Microsemi Corporation Description: DIODE SCHOTTKY 45V 120A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
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SBR12050 Microsemi Corporation Description: DIODE SCHOTTKY 50V 120A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
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SBR12050R Microsemi Corporation Description: DIODE SCHOTTKY 50V 120A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
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MAP5KE40A MAP5KE40A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 40VWM 64.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APT10M11B2VFRG APT10M11B2VFRG Microsemi Corporation APT10M11%28B2%2CL%29VFR.pdf Description: MOSFET N-CH 100V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
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APT20M22B2VRG APT20M22B2VRG Microsemi Corporation High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT10M09B2VFRG APT10M09B2VFRG Microsemi Corporation apt10m09%28b2%2Cl%29vfr.pdf Description: MOSFET N-CH 100V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
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APT20M22B2VFRG APT20M22B2VFRG Microsemi Corporation APT20M22B2VFR.pdf Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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2EZ180D/TR12 2EZ180D/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS%2Ce3.pdf Description: DIODE ZENER 180V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 725 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
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2EZ180DE3/TR8 2EZ180DE3/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS%2Ce3.pdf Description: DIODE ZENER 180V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 725 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
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1N5935BG 1N5935BG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 27V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
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1N5916AG 1N5916AG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916CG 1N5916CG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916DG 1N5916DG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916AE3/TR13 1N5916AE3/TR13 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916AP/TR12 1N5916AP/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916APE3/TR12 1N5916APE3/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916CE3/TR13 1N5916CE3/TR13 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916CP/TR12 1N5916CP/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916CPE3/TR12 1N5916CPE3/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916E3/TR13 1N5916E3/TR13 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916P/TR12 1N5916P/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916PE3/TR12 1N5916PE3/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916AP/TR8 1N5916AP/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916APE3/TR8 1N5916APE3/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916CP/TR8 1N5916CP/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916CPE3/TR8 1N5916CPE3/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916P/TR8 1N5916P/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916PE3/TR8 1N5916PE3/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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SMDA05C-5 SMDA05C-5 Microsemi Corporation SMDA03%20thru%2024C%2C%20SMDB03%20thru%2024C.pdf Description: TVS DIODE 5VWM 11VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMDA15C-5 SMDA15C-5 Microsemi Corporation SMDA03%20thru%2024C%2C%20SMDB03%20thru%2024C.pdf Description: TVS DIODE 15VWM 30VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 5
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMDA12C-5 SMDA12C-5 Microsemi Corporation SMDA03C-24C-5.pdf Description: TVS DIODE 12VWM 24VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMDA12C-5 SMDA12C-5 Microsemi Corporation SMDA03C-24C-5.pdf Description: TVS DIODE 12VWM 24VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
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JANTX1N4474CUS JANTX1N4474CUS Microsemi Corporation 1N4460US-1N4496US.1N6485US-1NN6491US.pdf Description: DIODE ZENER 24V 1.5W D5A
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Qualification: MIL-PRF-19500/406
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2N6544 2N6544 Microsemi Corporation Description: TRANS PNP 300V 8A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 125 W
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MXPLAD6.5KP90CA MXPLAD6.5KP90CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.5A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD6.5KP90CA MPLAD6.5KP90CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.5A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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MPLAD7.5KP90CAE3 Microsemi Corporation 132315-plad7-5kp-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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APTGT100SK60T1G Microsemi Corporation APTGT100SK60T1G.pdf Description: IGBT MODULE 600V 150A 340W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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2EZ140D5 2EZ140D5 Microsemi Corporation 11109-sd8a-datasheet Description: DIODE ZENER 140V 2W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 140 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 106.4 V
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LX8117-33CST LX8117-33CST Microsemi Corporation 9231-lx8117-pdf Description: IC REG LIN 3.3V 800MA SOT223 PWR
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-223, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 800mA
Protection Features: Over Current, Short Circuit
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LX8117-33CDD LX8117-33CDD Microsemi Corporation 9231-lx8117-pdf Description: IC REG LIN 3.3V 800MA TO263 PWR
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-263, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 800mA
Protection Features: Over Current, Short Circuit
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MS2201 Microsemi Corporation Description: RF TRANS NPN 45V 1.15GHZ M220
Packaging: Bulk
Package / Case: M220
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 10W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: M220
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MSC1450M Microsemi Corporation 10250-msc1450m-rev-datasheet Description: RF TRANS NPN 65V 1.09GHZ M216
Packaging: Bulk
Package / Case: M216
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 250°C (TJ)
Gain: 7dB
Power - Max: 910W
Current - Collector (Ic) (Max): 28A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: M216
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MS2202 Microsemi Corporation Description: RF TRANS NPN 3.5V 1.15GHZ M115
Packaging: Bulk
Package / Case: M115
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 10W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: M115
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SD1015 Microsemi Corporation Description: RF TRANS NPN 18V 150MHZ M135
Packaging: Bulk
Package / Case: M135
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: 200°C
Gain: 10dB
Power - Max: 10W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: M135
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SK18E3/TR13 SK18E3/TR13 Microsemi Corporation SK12%20thru%20SK110.pdf Description: DIODE SCHOTTKY 80V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
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LX8382-33CP LX8382-33CP Microsemi Corporation LX8382.pdf Description: IC REG LIN 3.3V 10A TO220 POWER
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 10A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 1.4V @ 10A
Protection Features: Over Current, Over Temperature
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LX8382-33CV LX8382-33CV Microsemi Corporation LX8382.pdf Description: IC REG LINEAR 3.3V 10A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 10A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-247-3
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 1.4V @ 10A
Protection Features: Over Current, Over Temperature
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0912-7 Microsemi Corporation 5600-0912-7-datasheet Description: RF TRANS NPN 60V 1.215GHZ 55CX
Packaging: Bulk
Package / Case: 55CX
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.5dB
Power - Max: 50W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: 55CX
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JAN1N6631U JAN1N6631U Microsemi Corporation 1N6626US%2C1N6631US.pdf Description: DIODE STANDARD 1000V 1.4A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1.4A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.4 A
Current - Reverse Leakage @ Vr: 4 µA @ 1000 V
Qualification: MIL-PRF-19500/590
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APT10SCE65B Microsemi Corporation Description: DIODE SCHOTTKY 650V 10A TO247
Packaging: Tube
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APT20SCE65B Microsemi Corporation Description: DIODE SCHOTTKY 650V 20A TO247
Packaging: Tube
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APT50SCE65B Microsemi Corporation Description: DIODE SCHOTTKY 650V 50A TO247
Packaging: Tube
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1N827AUR 1N827AUR Microsemi Corporation 1N821UR-1N829AUR.pdf Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827A (DO35) 1N827A (DO35) Microsemi Corporation 1N821_1N829A-1_DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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MXP5KE130Ae3 MXP5KE130Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 130VWM 209VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N5811AUS Microsemi Corporation Description: RECTIFIER DIODE
Packaging: Bulk
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SMAJ5947Ae3/TR13 SMAJ5947Ae3/TR13 Microsemi Corporation 9864-msc0311a-datasheet Description: DIODE ZENER 82V 3W DO214AC
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
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APTLGF300A1208G APTLGF300A1208G Microsemi Corporation APTLGF300A1208G.pdf Description: POWER MOD IGBT PHASE LEG LP8
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 400 A
Voltage: 1.2 kV
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SBR12045R
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 45V 120A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
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SBR12050
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 50V 120A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
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SBR12050R
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 50V 120A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
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MAP5KE40A 11043-p5ke-datasheet
MAP5KE40A
Hersteller: Microsemi Corporation
Description: TVS DIODE 40VWM 64.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APT10M11B2VFRG APT10M11%28B2%2CL%29VFR.pdf
APT10M11B2VFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
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APT20M22B2VRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT20M22B2VRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT10M09B2VFRG apt10m09%28b2%2Cl%29vfr.pdf
APT10M09B2VFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
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APT20M22B2VFRG APT20M22B2VFR.pdf
APT20M22B2VFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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2EZ180D/TR12 2EZ3.6D5-2EZ200DS%2Ce3.pdf
2EZ180D/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 725 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
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2EZ180DE3/TR8 2EZ3.6D5-2EZ200DS%2Ce3.pdf
2EZ180DE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 725 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
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1N5935BG 10922-sa5-57-datasheet
1N5935BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 27V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
Produkt ist nicht verfügbar
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1N5916AG 10922-sa5-57-datasheet
1N5916AG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916CG 10922-sa5-57-datasheet
1N5916CG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916DG 10922-sa5-57-datasheet
1N5916DG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916AE3/TR13 10922-sa5-57-datasheet
1N5916AE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916AP/TR12 10922-sa5-57-datasheet
1N5916AP/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916APE3/TR12 10922-sa5-57-datasheet
1N5916APE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916CE3/TR13 10922-sa5-57-datasheet
1N5916CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916CP/TR12 10922-sa5-57-datasheet
1N5916CP/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916CPE3/TR12 10922-sa5-57-datasheet
1N5916CPE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916E3/TR13 10922-sa5-57-datasheet
1N5916E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916P/TR12 10922-sa5-57-datasheet
1N5916P/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916PE3/TR12 10922-sa5-57-datasheet
1N5916PE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916AP/TR8 10922-sa5-57-datasheet
1N5916AP/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916APE3/TR8 10922-sa5-57-datasheet
1N5916APE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916CP/TR8 10922-sa5-57-datasheet
1N5916CP/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916CPE3/TR8 10922-sa5-57-datasheet
1N5916CPE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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1N5916P/TR8 10922-sa5-57-datasheet
1N5916P/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916PE3/TR8 10922-sa5-57-datasheet
1N5916PE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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SMDA05C-5 SMDA03%20thru%2024C%2C%20SMDB03%20thru%2024C.pdf
SMDA05C-5
Hersteller: Microsemi Corporation
Description: TVS DIODE 5VWM 11VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDA15C-5 SMDA03%20thru%2024C%2C%20SMDB03%20thru%2024C.pdf
SMDA15C-5
Hersteller: Microsemi Corporation
Description: TVS DIODE 15VWM 30VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 5
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDA12C-5 SMDA03C-24C-5.pdf
SMDA12C-5
Hersteller: Microsemi Corporation
Description: TVS DIODE 12VWM 24VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMDA12C-5 SMDA03C-24C-5.pdf
SMDA12C-5
Hersteller: Microsemi Corporation
Description: TVS DIODE 12VWM 24VC 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
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JANTX1N4474CUS 1N4460US-1N4496US.1N6485US-1NN6491US.pdf
JANTX1N4474CUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 1.5W D5A
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Qualification: MIL-PRF-19500/406
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2N6544
2N6544
Hersteller: Microsemi Corporation
Description: TRANS PNP 300V 8A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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MXPLAD6.5KP90CA 129479-rf01083-datasheet
MXPLAD6.5KP90CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.5A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD6.5KP90CA 129479-rf01083-datasheet
MPLAD6.5KP90CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.5A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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MPLAD7.5KP90CAE3 132315-plad7-5kp-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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APTGT100SK60T1G APTGT100SK60T1G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Produkt ist nicht verfügbar
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2EZ140D5 11109-sd8a-datasheet
2EZ140D5
Hersteller: Microsemi Corporation
Description: DIODE ZENER 140V 2W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 140 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 106.4 V
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LX8117-33CST 9231-lx8117-pdf
LX8117-33CST
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 800MA SOT223 PWR
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-223, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 800mA
Protection Features: Over Current, Short Circuit
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LX8117-33CDD 9231-lx8117-pdf
LX8117-33CDD
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 800MA TO263 PWR
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-263, Power
Voltage - Output (Min/Fixed): 3.3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.2V @ 800mA
Protection Features: Over Current, Short Circuit
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MS2201
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 45V 1.15GHZ M220
Packaging: Bulk
Package / Case: M220
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 10W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: M220
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MSC1450M 10250-msc1450m-rev-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ M216
Packaging: Bulk
Package / Case: M216
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 250°C (TJ)
Gain: 7dB
Power - Max: 910W
Current - Collector (Ic) (Max): 28A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: M216
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MS2202
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 3.5V 1.15GHZ M115
Packaging: Bulk
Package / Case: M115
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 10W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: M115
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SD1015
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 18V 150MHZ M135
Packaging: Bulk
Package / Case: M135
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: 200°C
Gain: 10dB
Power - Max: 10W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: M135
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SK18E3/TR13 SK12%20thru%20SK110.pdf
SK18E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 80V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
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LX8382-33CP LX8382.pdf
LX8382-33CP
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 10A TO220 POWER
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 10A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-220, Power
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 1.4V @ 10A
Protection Features: Over Current, Over Temperature
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LX8382-33CV LX8382.pdf
LX8382-33CV
Hersteller: Microsemi Corporation
Description: IC REG LINEAR 3.3V 10A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 10A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: TO-247-3
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 1.4V @ 10A
Protection Features: Over Current, Over Temperature
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0912-7 5600-0912-7-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 60V 1.215GHZ 55CX
Packaging: Bulk
Package / Case: 55CX
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.5dB
Power - Max: 50W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: 55CX
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JAN1N6631U 1N6626US%2C1N6631US.pdf
JAN1N6631U
Hersteller: Microsemi Corporation
Description: DIODE STANDARD 1000V 1.4A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1.4A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.4 A
Current - Reverse Leakage @ Vr: 4 µA @ 1000 V
Qualification: MIL-PRF-19500/590
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APT10SCE65B
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 650V 10A TO247
Packaging: Tube
Produkt ist nicht verfügbar
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APT20SCE65B
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 650V 20A TO247
Packaging: Tube
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APT50SCE65B
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 650V 50A TO247
Packaging: Tube
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1N827AUR 1N821UR-1N829AUR.pdf
1N827AUR
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827A (DO35) 1N821_1N829A-1_DO-35.pdf
1N827A (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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MXP5KE130Ae3 11043-p5ke-datasheet
MXP5KE130Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 130VWM 209VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N5811AUS
Hersteller: Microsemi Corporation
Description: RECTIFIER DIODE
Packaging: Bulk
Produkt ist nicht verfügbar
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SMAJ5947Ae3/TR13 9864-msc0311a-datasheet
SMAJ5947Ae3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 3W DO214AC
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
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APTLGF300A1208G APTLGF300A1208G.pdf
APTLGF300A1208G
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT PHASE LEG LP8
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 400 A
Voltage: 1.2 kV
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