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APA150-BG456 APA150-BG456 Microsemi Corporation 130707-proasic-sup-u-plus-u-sup-family-flash-fpgas-product-brief-datasheet Description: IC FPGA 242 I/O 456BGA
DigiKey Programmable: Not Verified
Number of I/O: 242
Total RAM Bits: 36864
Supplier Device Package: 456-PBGA (35x35)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: 0°C ~ 70°C (TA)
Number of Gates: 150000
Mounting Type: Surface Mount
Package / Case: 456-BBGA
Packaging: Tray
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APA150-BG456I APA150-BG456I Microsemi Corporation 130707-proasic-sup-u-plus-u-sup-family-flash-fpgas-product-brief-datasheet Description: IC FPGA 242 I/O 456BGA
DigiKey Programmable: Not Verified
Number of I/O: 242
Total RAM Bits: 36864
Supplier Device Package: 456-PBGA (35x35)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -40°C ~ 85°C (TA)
Number of Gates: 150000
Mounting Type: Surface Mount
Package / Case: 456-BBGA
Packaging: Tray
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APTM100U13SG Microsemi Corporation APTM100U13S.pdf Description: MOSFET N-CH 1000V 65A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 31600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: J3 Module
Packaging: Bulk
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MXPLAD6.5KP85Ae3 MXPLAD6.5KP85Ae3 Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP85A MXPLAD6.5KP85A Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP85CA MXPLAD6.5KP85CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N5354B 1N5354B Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 17V 5W T18
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: T-18
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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A1240A-1PQ144I Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 104 I/O 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 104
Number of LABs/CLBs: 684
Supplier Device Package: 144-PQFP (28x28)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Number of Gates: 4000
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
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A1240A-1PQ144C Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 104 I/O 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 104
Number of LABs/CLBs: 684
Supplier Device Package: 144-PQFP (28x28)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Number of Gates: 4000
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
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A1240A-PQ144M Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 104 I/O 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 104
Number of LABs/CLBs: 684
Supplier Device Package: 144-PQFP (28x28)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 4000
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
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A1240A-PQ144C Microsemi Corporation 130667-act-2-family-fpgas-datasheet Description: IC FPGA 104 I/O 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 104
Number of LABs/CLBs: 684
Supplier Device Package: 144-PQFP (28x28)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Number of Gates: 4000
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
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LX1725ILQ LX1725ILQ Microsemi Corporation Description: IC AMP D MONO/STEREO 32W 32MLPQ
Features: Depop, Differential Inputs, Mute, PWM, Short-Circuit and Thermal Protection, Standby
Packaging: Bulk
Package / Case: 32-VQFN Exposed Pad
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 12V ~ 35V, ±6V ~ 17.5V
Max Output Power x Channels @ Load: 32W x 1 @ 8Ohm; 16W x 2 @ 4Ohm
Supplier Device Package: 32-MLPQ (7x7)
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SMBG4732A/TR13 Microsemi Corporation 11031-sd19a-datasheet Description: DIODE ZENER 4.7V 2W DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: DO-214AA (SMBG)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMBG4732AE3/TR13 Microsemi Corporation 11031-sd19a-datasheet Description: DIODE ZENER 4.7V 2W DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: DO-214AA (SMBG)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MXPLAD6.5KP110Ae3 MXPLAD6.5KP110Ae3 Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP120Ae3 MXPLAD6.5KP120Ae3 Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 120VWM 193VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JANTX1N4462CUS JANTX1N4462CUS Microsemi Corporation 124793-lds-0183-1-datasheet Description: DIODE ZENER 7.5V 1.5W D5A
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
Qualification: MIL-PRF-19500/406
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1N5374e3/TR13 1N5374e3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374Ce3/TR13 1N5374Ce3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374/TR12 1N5374/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374e3/TR12 1N5374e3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374/TR8 1N5374/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374e3/TR8 1N5374e3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374C/TR12 1N5374C/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374C/TR8 1N5374C/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374Ce3/TR8 1N5374Ce3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374B 1N5374B Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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APTM20UM09SG Microsemi Corporation APTM20UM09S.pdf Description: MOSFET N-CH 200V 195A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 74.5A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 217 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
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APTM20DUM05TG Microsemi Corporation APTM20DUM05TG.pdf Description: MOSFET 2N-CH 200V 333A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SP4
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APTM20AM05FTG Microsemi Corporation APTM20AM05FT.pdf Description: MOSFET 2N-CH 200V 333A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SP4
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APT5F100K APT5F100K Microsemi Corporation APT5F100K.pdf Description: MOSFET N-CH 1000V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 [K]
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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APT6M100K APT6M100K Microsemi Corporation APT6M100K.pdf Description: MOSFET N-CH 1000V 6A TO220
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 [K]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 225W (Tc)
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JANS2N2221A JANS2N2221A Microsemi Corporation MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A TO-18
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANS2N2221AUB JANS2N2221AUB Microsemi Corporation MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A UB
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
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JANS2N2221AL JANS2N2221AL Microsemi Corporation MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A TO-18
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
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JANSL2N2221A JANSL2N2221A Microsemi Corporation Description: TRANS NPN 50V 0.8A TO-18
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANSL2N2221AL JANSL2N2221AL Microsemi Corporation Description: TRANS NPN 50V 0.8A TO-18
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
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JANSP2N2221A JANSP2N2221A Microsemi Corporation Description: TRANS NPN 50V 0.8A TO-18
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANSP2N2221AL JANSP2N2221AL Microsemi Corporation Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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JANS2N2221AUA Microsemi Corporation MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
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JANSH2N2221A JANSH2N2221A Microsemi Corporation JANSH2N2221A.pdf Description: TRANS NPN 50V 0.8A TO-18
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
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JANSH2N2221AL JANSH2N2221AL Microsemi Corporation Description: TRANS NPN 50V 0.8A TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
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JANSH2N2221AUA Microsemi Corporation Description: TRANS NPN 50V 0.8A UA
Qualification: MIL-PRF-19500/255
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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JANSH2N2221AUB JANSH2N2221AUB Microsemi Corporation Description: TRANS NPN 50V 0.8A UB
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
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JANSH2N2221AUBC JANSH2N2221AUBC Microsemi Corporation 8898-lds-0060-pdf.pdf Description: TRANS NPN 50V 0.8A UBC
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
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Jantxv2N2221AUB Jantxv2N2221AUB Microsemi Corporation MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A UB
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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MXPLAD130KP275CA MXPLAD130KP275CA Microsemi Corporation Description: TVS DIODE 275VWM 445VC PLAD
Package / Case: Nonstandard SMD
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 445V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Surface Mount
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MXPLAD130KP275CAE3 MXPLAD130KP275CAE3 Microsemi Corporation Description: TVS DIODE 275VWM 445VC PLAD
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 445V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
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MXPLAD130KP275CVE3 MXPLAD130KP275CVE3 Microsemi Corporation Description: TVS DIODE 275VWM 400VC PLAD
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 400V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
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TPR1000 Microsemi Corporation Description: RF TRANS NPN 65V 1.09GHZ 55KV
Packaging: Bulk
Package / Case: 55KV
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB
Power - Max: 2900W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55KV
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LX8386A-33CDD LX8386A-33CDD Microsemi Corporation LX8386%5B1%5D.pdf Description: IC REG LIN 3.3V 1.5A TO263 PWR
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Tube
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.3V @ 1.5A
PSRR: 83dB (120Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-263, Power
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
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LX8386A-33CP LX8386A-33CP Microsemi Corporation LX8386%5B1%5D.pdf Description: IC REG LIN 3.3V 1.5A TO220 PWR
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Voltage Dropout (Max): 1.3V @ 1.5A
PSRR: 83dB (120Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220, Power
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Protection Features: Over Current, Over Temperature
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681-2D, 2N, 2P Microsemi Corporation 11557-wt3-27-datasheet Description: DIODE MODULE GP 200V 15A ND
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Nd
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Nd
Packaging: Bulk
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MXLP5KE48A MXLP5KE48A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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CPT30045 CPT30045 Microsemi Corporation CPT30035-CPT30050.pdf Description: DIODE MOD SCHOTT 45V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
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CPT30050 CPT30050 Microsemi Corporation CPT30035-CPT30050.pdf Description: DIODE MOD SCHOTT 50V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
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CPT50145 CPT50145 Microsemi Corporation CPT50130-50145.pdf Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A
Current - Reverse Leakage @ Vr: 12 mA @ 45 V
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CPT30060 CPT30060 Microsemi Corporation CPT30060.pdf Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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CPT600150D CPT600150D Microsemi Corporation CPT600120-CPT600150_Dwg.pdf Description: DIODE MOD SCHOT 150V 300A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A
Current - Reverse Leakage @ Vr: 7 mA @ 150 V
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APT10043JVR APT10043JVR Microsemi Corporation 6547-apt10043jvr-datasheet Description: MOSFET N-CH 1000V 22A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APA150-BG456 130707-proasic-sup-u-plus-u-sup-family-flash-fpgas-product-brief-datasheet
APA150-BG456
Hersteller: Microsemi Corporation
Description: IC FPGA 242 I/O 456BGA
DigiKey Programmable: Not Verified
Number of I/O: 242
Total RAM Bits: 36864
Supplier Device Package: 456-PBGA (35x35)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: 0°C ~ 70°C (TA)
Number of Gates: 150000
Mounting Type: Surface Mount
Package / Case: 456-BBGA
Packaging: Tray
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APA150-BG456I 130707-proasic-sup-u-plus-u-sup-family-flash-fpgas-product-brief-datasheet
APA150-BG456I
Hersteller: Microsemi Corporation
Description: IC FPGA 242 I/O 456BGA
DigiKey Programmable: Not Verified
Number of I/O: 242
Total RAM Bits: 36864
Supplier Device Package: 456-PBGA (35x35)
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -40°C ~ 85°C (TA)
Number of Gates: 150000
Mounting Type: Surface Mount
Package / Case: 456-BBGA
Packaging: Tray
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APTM100U13SG APTM100U13S.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 65A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 31600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: J3 Module
Packaging: Bulk
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MXPLAD6.5KP85Ae3 129479-rf01083-datasheet
MXPLAD6.5KP85Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP85A 129479-rf01083-datasheet
MXPLAD6.5KP85A
Hersteller: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXPLAD6.5KP85CA 129479-rf01083-datasheet
MXPLAD6.5KP85CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N5354B 1N5333B-88B.pdf
1N5354B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 17V 5W T18
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: T-18
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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A1240A-1PQ144I 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 104 I/O 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 104
Number of LABs/CLBs: 684
Supplier Device Package: 144-PQFP (28x28)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Number of Gates: 4000
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
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A1240A-1PQ144C 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 104 I/O 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 104
Number of LABs/CLBs: 684
Supplier Device Package: 144-PQFP (28x28)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Number of Gates: 4000
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
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A1240A-PQ144M 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 104 I/O 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 104
Number of LABs/CLBs: 684
Supplier Device Package: 144-PQFP (28x28)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TC)
Number of Gates: 4000
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
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A1240A-PQ144C 130667-act-2-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 104 I/O 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 104
Number of LABs/CLBs: 684
Supplier Device Package: 144-PQFP (28x28)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Number of Gates: 4000
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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LX1725ILQ
LX1725ILQ
Hersteller: Microsemi Corporation
Description: IC AMP D MONO/STEREO 32W 32MLPQ
Features: Depop, Differential Inputs, Mute, PWM, Short-Circuit and Thermal Protection, Standby
Packaging: Bulk
Package / Case: 32-VQFN Exposed Pad
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 12V ~ 35V, ±6V ~ 17.5V
Max Output Power x Channels @ Load: 32W x 1 @ 8Ohm; 16W x 2 @ 4Ohm
Supplier Device Package: 32-MLPQ (7x7)
Produkt ist nicht verfügbar
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SMBG4732A/TR13 11031-sd19a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 2W DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: DO-214AA (SMBG)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMBG4732AE3/TR13 11031-sd19a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 2W DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: DO-214AA (SMBG)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MXPLAD6.5KP110Ae3 rf01083_rev_b.pdf
MXPLAD6.5KP110Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.7A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXPLAD6.5KP120Ae3 rf01083_rev_b.pdf
MXPLAD6.5KP120Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JANTX1N4462CUS 124793-lds-0183-1-datasheet
JANTX1N4462CUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 1.5W D5A
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
Qualification: MIL-PRF-19500/406
Produkt ist nicht verfügbar
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1N5374e3/TR13 1N5333B-88B.pdf
1N5374e3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374Ce3/TR13 1N5333B-88B.pdf
1N5374Ce3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374/TR12 1N5333B-88B.pdf
1N5374/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374e3/TR12 1N5333B-88B.pdf
1N5374e3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374/TR8 1N5333B-88B.pdf
1N5374/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374e3/TR8 1N5333B-88B.pdf
1N5374e3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374C/TR12 1N5333B-88B.pdf
1N5374C/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374C/TR8 1N5333B-88B.pdf
1N5374C/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374Ce3/TR8 1N5333B-88B.pdf
1N5374Ce3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374B 1N5333B-88B.pdf
1N5374B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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APTM20UM09SG APTM20UM09S.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 195A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 74.5A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 217 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
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APTM20DUM05TG APTM20DUM05TG.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 200V 333A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SP4
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APTM20AM05FTG APTM20AM05FT.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 200V 333A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SP4
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APT5F100K APT5F100K.pdf
APT5F100K
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 [K]
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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APT6M100K APT6M100K.pdf
APT6M100K
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 6A TO220
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 [K]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 225W (Tc)
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JANS2N2221A MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANS2N2221A
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANS2N2221AUB MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANS2N2221AUB
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Produkt ist nicht verfügbar
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JANS2N2221AL MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANS2N2221AL
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Produkt ist nicht verfügbar
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JANSL2N2221A
JANSL2N2221A
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSL2N2221AL
JANSL2N2221AL
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Produkt ist nicht verfügbar
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JANSP2N2221A
JANSP2N2221A
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSP2N2221AL
JANSP2N2221AL
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANS2N2221AUA MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANSH2N2221A JANSH2N2221A.pdf
JANSH2N2221A
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Produkt ist nicht verfügbar
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JANSH2N2221AL
JANSH2N2221AL
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
Produkt ist nicht verfügbar
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JANSH2N2221AUA
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Qualification: MIL-PRF-19500/255
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANSH2N2221AUB
JANSH2N2221AUB
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Produkt ist nicht verfügbar
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JANSH2N2221AUBC 8898-lds-0060-pdf.pdf
JANSH2N2221AUBC
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UBC
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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Jantxv2N2221AUB MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
Jantxv2N2221AUB
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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MXPLAD130KP275CA
MXPLAD130KP275CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 275VWM 445VC PLAD
Package / Case: Nonstandard SMD
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 445V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Surface Mount
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MXPLAD130KP275CAE3
MXPLAD130KP275CAE3
Hersteller: Microsemi Corporation
Description: TVS DIODE 275VWM 445VC PLAD
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 445V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
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MXPLAD130KP275CVE3
MXPLAD130KP275CVE3
Hersteller: Microsemi Corporation
Description: TVS DIODE 275VWM 400VC PLAD
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 400V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Produkt ist nicht verfügbar
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TPR1000
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55KV
Packaging: Bulk
Package / Case: 55KV
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB
Power - Max: 2900W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55KV
Produkt ist nicht verfügbar
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LX8386A-33CDD LX8386%5B1%5D.pdf
LX8386A-33CDD
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 1.5A TO263 PWR
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Tube
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.3V @ 1.5A
PSRR: 83dB (120Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-263, Power
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Produkt ist nicht verfügbar
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LX8386A-33CP LX8386%5B1%5D.pdf
LX8386A-33CP
Hersteller: Microsemi Corporation
Description: IC REG LIN 3.3V 1.5A TO220 PWR
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Voltage Dropout (Max): 1.3V @ 1.5A
PSRR: 83dB (120Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220, Power
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Protection Features: Over Current, Over Temperature
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681-2D, 2N, 2P 11557-wt3-27-datasheet
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 200V 15A ND
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Nd
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Nd
Packaging: Bulk
Produkt ist nicht verfügbar
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MXLP5KE48A 11043-p5ke-datasheet
MXLP5KE48A
Hersteller: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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CPT30045 CPT30035-CPT30050.pdf
CPT30045
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 45V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
Produkt ist nicht verfügbar
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CPT30050 CPT30035-CPT30050.pdf
CPT30050
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 50V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
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CPT50145 CPT50130-50145.pdf
CPT50145
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A
Current - Reverse Leakage @ Vr: 12 mA @ 45 V
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CPT30060 CPT30060.pdf
CPT30060
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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CPT600150D CPT600120-CPT600150_Dwg.pdf
CPT600150D
Hersteller: Microsemi Corporation
Description: DIODE MOD SCHOT 150V 300A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A
Current - Reverse Leakage @ Vr: 7 mA @ 150 V
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APT10043JVR 6547-apt10043jvr-datasheet
APT10043JVR
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 22A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
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