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SMBG5918A/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918AE3/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918B/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918BE3/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918C/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918CE3/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5919A/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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SMBG5919AE3/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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SMBG5919B/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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SMBG5919C/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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SMBG5919CE3/TR13 Microsemi Corporation 10867-sa3-41-datasheet Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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1N5387B 1N5387B Microsemi Corporation 1N5333B-88B.pdf Description: ZENER DO201 190V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 190 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 137 V
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MAPLAD7.5KP70CA Microsemi Corporation 132315-plad7-5kp-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MAPLAD7.5KP70CAE3 Microsemi Corporation 132315-plad7-5kp-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ440Ce3/TR13 SMAJ440Ce3/TR13 Microsemi Corporation Description: TVS DIODE 440VWM DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Power - Peak Pulse: 500W
Power Line Protection: No
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SMAJ440e3/TR13 SMAJ440e3/TR13 Microsemi Corporation Description: TVS DIODE 440VWM DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Power - Peak Pulse: 500W
Power Line Protection: No
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MSD160-16 MSD160-16 Microsemi Corporation 10536-msd160-rev1-datasheet Description: BRIDGE RECT 3PHASE 1.6KV 160A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 1600 V
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MSD160-08 MSD160-08 Microsemi Corporation 10536-msd160-rev1-datasheet Description: BRIDGE RECT 3PHASE 800V 160A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
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MSD160-12 MSD160-12 Microsemi Corporation 10536-msd160-rev1-datasheet Description: BRIDGE RECT 3PHASE 1.2KV 160A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 1200 V
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MSD160-18 MSD160-18 Microsemi Corporation 10536-msd160-rev1-datasheet Description: BRIDGE RECT 3PHASE 1.8KV 160A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 1800 V
Produkt ist nicht verfügbar
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NX4110CZ1TR Microsemi Corporation 10606-nx4110ds-pdf Description: IC REG BUCK ADJ 1A SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SOT-23-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.73V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
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1N4678 (DO35) 1N4678 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 1.8V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 1.8 V
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
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1N5251B (DO-35) 1N5251B (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 22V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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APTC90DDA12T1G Microsemi Corporation APTC90DDA12T1G.pdf Description: MOSFET 2N-CH 900V 30A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SP1
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APTC90DSK12T1G Microsemi Corporation APTC90DSK12T1G.pdf Description: MOSFET 2N-CH 900V 30A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SP1
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APTC90H12T2G Microsemi Corporation APTC90H12T2G.pdf Description: MOSFET 4N-CH 900V 30A SP2
Packaging: Tray
Package / Case: SP2
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SP2
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SGR137L Microsemi Corporation SGR137(A).pdf Description: IC REG LIN NEG ADJ 1.5A 20CLCC
Packaging: Bulk
Package / Case: 20-CLCC
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Negative
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Max): -37V
Voltage - Output (Min/Fixed): -1.2V
Control Features: Current Limit
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2EZ10D10/TR12 2EZ10D10/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 10V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
Produkt ist nicht verfügbar
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2EZ10D10E3/TR12 2EZ10D10E3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 10V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
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2EZ10D10/TR8 2EZ10D10/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 10V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
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2EZ10D10E3/TR8 2EZ10D10E3/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 10V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
Produkt ist nicht verfügbar
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NX4108CZ1TR NX4108CZ1TR Microsemi Corporation 10605-nx4108ds-pdf Description: IC REG BUCK ADJ 1A SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SOT-23-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.95V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
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APTGF360U60D4G Microsemi Corporation APTGF360U60D4G.pdf Description: IGBT MODULE 600V 450A 1560W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 360A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: NPT
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1560 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
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BR247-600B2-28V Microsemi Corporation 126336-br247-datasheet Description: RELAY GEN PURPOSE DPDT 10A 28V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 28VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 46.7 mA
Coil Type: Latching, Single Coil
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Operate Voltage: 18 VDC
Operate Time: 10 ms
Release Time: 10 ms
Load - Max Switching: 2080VA, 280W
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BR247-600B2-28V-007L Microsemi Corporation 126336-br247-datasheet Description: RELAY GEN PURPOSE DPDT 10A 28V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 28VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 46.7 mA
Coil Type: Latching, Single Coil
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Operate Voltage: 18 VDC
Operate Time: 10 ms
Release Time: 10 ms
Load - Max Switching: 2080VA, 280W
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BR247-600B2-28V-009L Microsemi Corporation 126336-br247-datasheet Description: RELAY GEN PURPOSE DPDT 10A 28V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 28VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 46.7 mA
Coil Type: Latching, Single Coil
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Operate Voltage: 18 VDC
Operate Time: 10 ms
Release Time: 10 ms
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1N4711 (DO35) 1N4711 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 20.4 V
Produkt ist nicht verfügbar
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FST50100 FST50100 Microsemi Corporation FST50100.pdf Description: DIODE ARR SCHOT 100V 25A TO247AD
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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FST50100E3 FST50100E3 Microsemi Corporation FST50100.pdf Description: DIODE ARR SCHOT 100V 25A TO247AD
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MXSMBJ2K4.0 MXSMBJ2K4.0 Microsemi Corporation MSMB(G,J)2K3.0 - 5.0.pdf Description: TVS DIODE 4VWM 6.3VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APT25GR120SSCD10 APT25GR120SSCD10 Microsemi Corporation APT25GR120xSCD10.pdf Description: IGBT 1200V 75A 521W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 434µJ (on), 466µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
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APT25SM120B Microsemi Corporation Description: SICFET N-CH 1200V 25A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 20V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
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APT25SM120S Microsemi Corporation Description: SICFET N-CH 1200V 25A D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 20V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D3
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
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1N5946AG 1N5946AG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 75V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
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MSAD70-16 Microsemi Corporation MSxD70.pdf Description: DIODE MODULE GP 1600V 70A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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WDS4N Microsemi Corporation Description: STAND-ALONE WP4 DEVELOPMENT BOAR
Packaging: Bulk
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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APT10SCD120K APT10SCD120K Microsemi Corporation Description: DIODE SIL CARB 1.2KV 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
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2N3866A 2N3866A Microsemi Corporation 77284-lds-0175-datasheet Description: RF TRANS NPN 30V 400MHZ TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-39
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JANSR2N7261U Microsemi Corporation 8932-lds-0119-datasheet Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Tray
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 8A, 12V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Qualification: MIL-PRF-19500/601
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JANSR2N7262U Microsemi Corporation 8933-lds-0120-datasheet Description: MOSFET N-CH 200V 5.5A 18ULCC
Packaging: Tray
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 364mOhm @ 5.5A, 12V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Qualification: MIL-PRF-19500/601
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JANSR2N7268U JANSR2N7268U Microsemi Corporation 8934-lds-0121-datasheet Description: MOSFET N-CH 100V 34A U1
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 34A, 12V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: U1 (SMD-1)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 12 V
Qualification: MIL-PRF-19500/603
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JANSR2N7269 Microsemi Corporation 8935-lds-0122-datasheet Description: MOSFET N-CH 200V 26A TO254AA
Packaging: Tray
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
Qualification: MIL-PRF-19500/603
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JANSR2N7269U JANSR2N7269U Microsemi Corporation 8935-lds-0122-datasheet Description: MOSFET N-CH 200V 26A U1
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: U1 (SMD-1)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
Qualification: MIL-PRF-19500/603
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MAX9450EHJ+ MAX9450EHJ+ Microsemi Corporation MAX9450-52.pdf Description: IC CLOCK GENERATOR W/VCXO 32TQFP
Packaging: Tray
Package / Case: 32-TQFP Exposed Pad
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 160MHz
Input: LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Main Purpose: 3G, Ethernet, SONET/SDH
Ratio - Input:Output: 2:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-TQFP-EP (5x5)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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3EZ33D/TR12 3EZ33D/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D10/TR12 3EZ33D10/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D10E3/TR12 3EZ33D10E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D2/TR12 3EZ33D2/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D2E3/TR12 3EZ33D2E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D5/TR12 3EZ33D5/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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SMBG5918A/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918AE3/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918B/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918BE3/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918C/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5918CE3/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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SMBG5919A/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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SMBG5919AE3/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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SMBG5919B/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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SMBG5919C/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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SMBG5919CE3/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 2W SMBG
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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1N5387B 1N5333B-88B.pdf
1N5387B
Hersteller: Microsemi Corporation
Description: ZENER DO201 190V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 190 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 137 V
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MAPLAD7.5KP70CA 132315-plad7-5kp-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MAPLAD7.5KP70CAE3 132315-plad7-5kp-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ440Ce3/TR13
SMAJ440Ce3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 440VWM DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Power - Peak Pulse: 500W
Power Line Protection: No
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SMAJ440e3/TR13
SMAJ440e3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 440VWM DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Power - Peak Pulse: 500W
Power Line Protection: No
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MSD160-16 10536-msd160-rev1-datasheet
MSD160-16
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 160A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 1600 V
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MSD160-08 10536-msd160-rev1-datasheet
MSD160-08
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 160A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
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MSD160-12 10536-msd160-rev1-datasheet
MSD160-12
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 160A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 1200 V
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MSD160-18 10536-msd160-rev1-datasheet
MSD160-18
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 160A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 1800 V
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NX4110CZ1TR 10606-nx4110ds-pdf
Hersteller: Microsemi Corporation
Description: IC REG BUCK ADJ 1A SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SOT-23-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.73V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
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1N4678 (DO35) 125997-lds-0240-datasheet
1N4678 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 1.8V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 1.8 V
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
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1N5251B (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5251B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 22V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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APTC90DDA12T1G APTC90DDA12T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 900V 30A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SP1
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APTC90DSK12T1G APTC90DSK12T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 900V 30A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SP1
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APTC90H12T2G APTC90H12T2G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 900V 30A SP2
Packaging: Tray
Package / Case: SP2
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SP2
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SGR137L SGR137(A).pdf
Hersteller: Microsemi Corporation
Description: IC REG LIN NEG ADJ 1.5A 20CLCC
Packaging: Bulk
Package / Case: 20-CLCC
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Negative
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Max): -37V
Voltage - Output (Min/Fixed): -1.2V
Control Features: Current Limit
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2EZ10D10/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ10D10/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
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2EZ10D10E3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ10D10E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
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2EZ10D10/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ10D10/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
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2EZ10D10E3/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ10D10E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
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NX4108CZ1TR 10605-nx4108ds-pdf
NX4108CZ1TR
Hersteller: Microsemi Corporation
Description: IC REG BUCK ADJ 1A SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SOT-23-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.95V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
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APTGF360U60D4G APTGF360U60D4G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 450A 1560W D4
Packaging: Bulk
Package / Case: D4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 360A
NTC Thermistor: No
Supplier Device Package: D4
IGBT Type: NPT
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1560 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
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BR247-600B2-28V 126336-br247-datasheet
Hersteller: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 28VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 46.7 mA
Coil Type: Latching, Single Coil
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Operate Voltage: 18 VDC
Operate Time: 10 ms
Release Time: 10 ms
Load - Max Switching: 2080VA, 280W
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BR247-600B2-28V-007L 126336-br247-datasheet
Hersteller: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 28VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 46.7 mA
Coil Type: Latching, Single Coil
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Operate Voltage: 18 VDC
Operate Time: 10 ms
Release Time: 10 ms
Load - Max Switching: 2080VA, 280W
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BR247-600B2-28V-009L 126336-br247-datasheet
Hersteller: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 28VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 46.7 mA
Coil Type: Latching, Single Coil
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Operate Voltage: 18 VDC
Operate Time: 10 ms
Release Time: 10 ms
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1N4711 (DO35) 125997-lds-0240-datasheet
1N4711 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 20.4 V
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FST50100 FST50100.pdf
FST50100
Hersteller: Microsemi Corporation
Description: DIODE ARR SCHOT 100V 25A TO247AD
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.67 EUR
Mindestbestellmenge: 2
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FST50100E3 FST50100.pdf
FST50100E3
Hersteller: Microsemi Corporation
Description: DIODE ARR SCHOT 100V 25A TO247AD
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MXSMBJ2K4.0 MSMB(G,J)2K3.0 - 5.0.pdf
MXSMBJ2K4.0
Hersteller: Microsemi Corporation
Description: TVS DIODE 4VWM 6.3VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APT25GR120SSCD10 APT25GR120xSCD10.pdf
APT25GR120SSCD10
Hersteller: Microsemi Corporation
Description: IGBT 1200V 75A 521W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 434µJ (on), 466µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
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APT25SM120B
Hersteller: Microsemi Corporation
Description: SICFET N-CH 1200V 25A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 20V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
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APT25SM120S
Hersteller: Microsemi Corporation
Description: SICFET N-CH 1200V 25A D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 20V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D3
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
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1N5946AG 10922-sa5-57-datasheet
1N5946AG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
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MSAD70-16 MSxD70.pdf
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 1600V 70A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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WDS4N
Hersteller: Microsemi Corporation
Description: STAND-ALONE WP4 DEVELOPMENT BOAR
Packaging: Bulk
Supplied Contents: Board(s)
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APT10SCD120K
APT10SCD120K
Hersteller: Microsemi Corporation
Description: DIODE SIL CARB 1.2KV 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.58 EUR
Mindestbestellmenge: 2
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2N3866A 77284-lds-0175-datasheet
2N3866A
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 30V 400MHZ TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-39
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JANSR2N7261U 8932-lds-0119-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Tray
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 8A, 12V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Qualification: MIL-PRF-19500/601
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JANSR2N7262U 8933-lds-0120-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 5.5A 18ULCC
Packaging: Tray
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 364mOhm @ 5.5A, 12V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Qualification: MIL-PRF-19500/601
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JANSR2N7268U 8934-lds-0121-datasheet
JANSR2N7268U
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A U1
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 34A, 12V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: U1 (SMD-1)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 12 V
Qualification: MIL-PRF-19500/603
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JANSR2N7269 8935-lds-0122-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 26A TO254AA
Packaging: Tray
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
Qualification: MIL-PRF-19500/603
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JANSR2N7269U 8935-lds-0122-datasheet
JANSR2N7269U
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 26A U1
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: U1 (SMD-1)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
Qualification: MIL-PRF-19500/603
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MAX9450EHJ+ MAX9450-52.pdf
MAX9450EHJ+
Hersteller: Microsemi Corporation
Description: IC CLOCK GENERATOR W/VCXO 32TQFP
Packaging: Tray
Package / Case: 32-TQFP Exposed Pad
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 160MHz
Input: LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Main Purpose: 3G, Ethernet, SONET/SDH
Ratio - Input:Output: 2:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-TQFP-EP (5x5)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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3EZ33D/TR12 10926-sa5-67-datasheet
3EZ33D/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D10/TR12 10926-sa5-67-datasheet
3EZ33D10/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D10E3/TR12 10926-sa5-67-datasheet
3EZ33D10E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D2/TR12 10926-sa5-67-datasheet
3EZ33D2/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D2E3/TR12 10926-sa5-67-datasheet
3EZ33D2E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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3EZ33D5/TR12 10926-sa5-67-datasheet
3EZ33D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 33V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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