Suchergebnisse für "IRF624" : 20
Art der Ansicht :
Mindestbestellmenge: 2
Mindestbestellmenge: 2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF624PBF | Vishay Semiconductors |
  MOSFET 250V N-CH HEXFET |
auf Bestellung 622 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF624PBF-BE3 | Vishay / Siliconix |
MOSFET 250V N-CH HEXFET |
auf Bestellung 1566 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF624SPBF | Vishay Semiconductors |
MOSFET N-Chan 250V 4.4 Amp |
auf Bestellung 1535 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF624 | IR |
09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF624S | IR |
09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF624S | IR |
TO-263 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF624 Produktcode: 7924 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 250 Idd,A: 04.01.2015 Rds(on), Ohm: 01.01.2015 Ciss, pF/Qg, nC: 335/14 JHGF: THT |
Produkt ist nicht verfügbar
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IRF624SPBF Produktcode: 165360 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRF624 | Vishay / Siliconix |
MOSFET RECOMMENDED ALT IRF624PBF |
Produkt ist nicht verfügbar |
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| IRF624PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.4A Pulsed drain current: 14A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.1Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF624PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.4A Pulsed drain current: 14A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.1Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF624PBF | Vishay |
Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF624PBF | Vishay |
Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF624PBF-BE3 | Vishay |
Trans MOSFET N-CH 250V 4.4A |
Produkt ist nicht verfügbar |
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| IRF624SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.4A Pulsed drain current: 14A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.1Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF624SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.4A Pulsed drain current: 14A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.1Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF624SPBF | Vishay |
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRF624SPBF | Vishay |
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRF624SPBF | Vishay |
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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NTE67 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3A; Idm: 18A; 75W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3A Pulsed drain current: 18A Power dissipation: 75W Case: TO220 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| IRF624PBF | |
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Hersteller: Vishay Semiconductors
MOSFET 250V N-CH HEXFET
MOSFET 250V N-CH HEXFET
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.12 EUR |
| IRF624PBF-BE3 |
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Hersteller: Vishay / Siliconix
MOSFET 250V N-CH HEXFET
MOSFET 250V N-CH HEXFET
auf Bestellung 1566 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.37 EUR |
| 2000+ | 1.23 EUR |
| 10000+ | 1.22 EUR |
| IRF624SPBF |
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Hersteller: Vishay Semiconductors
MOSFET N-Chan 250V 4.4 Amp
MOSFET N-Chan 250V 4.4 Amp
auf Bestellung 1535 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.33 EUR |
| 10+ | 2.68 EUR |
| 100+ | 2.2 EUR |
| 250+ | 2.16 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.58 EUR |
| 2000+ | 1.49 EUR |
| IRF624 Produktcode: 7924 |
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 250
Idd,A: 04.01.2015
Rds(on), Ohm: 01.01.2015
Ciss, pF/Qg, nC: 335/14
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 250
Idd,A: 04.01.2015
Rds(on), Ohm: 01.01.2015
Ciss, pF/Qg, nC: 335/14
JHGF: THT
Produkt ist nicht verfügbar
| IRF624PBF | |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF624PBF | |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| IRF624PBF | |
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Hersteller: Vishay
Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
| IRF624PBF | |
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Hersteller: Vishay
Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
| IRF624SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF624SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| IRF624SPBF |
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Hersteller: Vishay
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
| IRF624SPBF |
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Hersteller: Vishay
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
| IRF624SPBF |
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Hersteller: Vishay
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
| NTE67 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3A; Idm: 18A; 75W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3A
Pulsed drain current: 18A
Power dissipation: 75W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3A; Idm: 18A; 75W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3A
Pulsed drain current: 18A
Power dissipation: 75W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar