Produkte > irf
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| IRF3610STRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3610STRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3610STRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 891 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3610STRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 94400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3610STRLPBF | Infineon Technologies | MOSFETs PLANAR 40<-<100V | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF362 | International Rectifier HiRel Products | IRF362 | auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF362 | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF362 | International Rectifier | Description: N-CHANNEL HERMETIC MOS HEXFET Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A Power Dissipation (Max): 300W Supplier Device Package: TO-204AA (TO-3) Part Status: Active Drain to Source Voltage (Vdss): 400 V | auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF36ER100K | Vishay / Dale | RF inductors - Leaded 10uH 10% Axial Leaded | auf Bestellung 12677 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF36ER100K | Vishay Dale | Description: FIXED IND 10UH 500MA 580 MOHM TH Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 580mOhm Max Q @ Freq: 70 @ 7.96MHz Frequency - Self Resonant: 45MHz Material - Core: Ferrite Inductance Frequency - Test: 7.96 MHz Inductance: 10 µH Current Rating (Amps): 500 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER101K | Vishay | RF Choke Wirewound 100uH 10% 2.52MHz 30Q-Factor Ferrite 275mA 1.8Ohm DCR AXL T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER101K | Vishay Dale | Description: FIXED IND 100UH 275MA 1.8 OHM TH Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 1.8Ohm Max Q @ Freq: 30 @ 2.52MHz Frequency - Self Resonant: 4.8MHz Material - Core: Ferrite Inductance Frequency - Test: 2.52 MHz Inductance: 100 µH Current Rating (Amps): 275 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER102K | Vishay Dale | Description: FIXED IND 1MH 100MA 17.4 OHM TH Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 17.4Ohm Max Q @ Freq: 50 @ 796kHz Frequency - Self Resonant: 1.4MHz Material - Core: Ferrite Inductance Frequency - Test: 796 kHz Inductance: 1 mH Current Rating (Amps): 100 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER1R0K | Vishay Dale | Description: FIXED IND 1UH 920MA 240 MOHM TH Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 240mOhm Max Q @ Freq: 45 @ 25.2MHz Frequency - Self Resonant: 140MHz Material - Core: Ferrite Inductance Frequency - Test: 25.2 MHz Inductance: 1 µH Current Rating (Amps): 920 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER1R8K | Vishay Dale | Description: FIXED IND 1.8UH 790MA 320 MOHM Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 320mOhm Max Q @ Freq: 55 @ 7.96MHz Frequency - Self Resonant: 121MHz Material - Core: Ferrite Inductance Frequency - Test: 7.96 MHz Inductance: 1.8 µH Current Rating (Amps): 790 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER220K | Vishay Dale | Description: FIXED IND 22UH 410MA 840 MOHM TH Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 840mOhm Max Q @ Freq: 40 @ 2.52MHz Frequency - Self Resonant: 9.9MHz Material - Core: Ferrite Inductance Frequency - Test: 2.52 MHz Inductance: 22 µH Current Rating (Amps): 410 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER221K | Vishay Dale | Description: FIXED IND 220UH 155MA 5.1 OHM TH Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 5.1Ohm Max Q @ Freq: 70 @ 796kHz Frequency - Self Resonant: 3MHz Material - Core: Ferrite Inductance Frequency - Test: 796 kHz Inductance: 220 µH Current Rating (Amps): 155 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER270J | Vishay Dale | Description: FIXED IND 27UH 390MA 940 MOHM TH Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 940mOhm Max Q @ Freq: 55 @ 2.52MHz Frequency - Self Resonant: 7.6MHz Material - Core: Ferrite Inductance Frequency - Test: 2.52 MHz Supplier Device Package: Axial Inductance: 27 µH Current Rating (Amps): 390 mA | auf Bestellung 4779 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF36ER270J | Vishay Dale | Description: FIXED IND 27UH 390MA 940 MOHM TH Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 940mOhm Max Q @ Freq: 55 @ 2.52MHz Frequency - Self Resonant: 7.6MHz Material - Core: Ferrite Inductance Frequency - Test: 2.52 MHz Supplier Device Package: Axial Inductance: 27 µH Current Rating (Amps): 390 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER270K | Vishay Dale | Description: FIXED IND 27UH 390MA 940 MOHM TH Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 940mOhm Max Q @ Freq: 55 @ 2.52MHz Frequency - Self Resonant: 7.6MHz Material - Core: Ferrite Inductance Frequency - Test: 2.52 MHz Inductance: 27 µH Current Rating (Amps): 390 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER271K | Vishay Dale | Description: FIXED IND 270UH 146MA 5.8 OHM TH Tolerance: ±10% Packaging: Bag Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 5.8Ohm Max Q @ Freq: 65 @ 796kHz Frequency - Self Resonant: 2.8MHz Material - Core: Ferrite Inductance Frequency - Test: 796 kHz Inductance: 270 µH Current Rating (Amps): 146 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER2R2K | Vishay Dale | Description: FIXED IND 2.2UH 750MA 350 MOHM Tolerance: ±10% Packaging: Bag Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 350mOhm Max Q @ Freq: 55 @ 7.96MHz Frequency - Self Resonant: 110MHz Material - Core: Ferrite Inductance Frequency - Test: 7.96 MHz Inductance: 2.2 µH Current Rating (Amps): 750 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER330K | Vishay Dale | Description: FIXED IND 33UH 370MA 1.03 OHM TH Packaging: Bag Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 1.03Ohm Max Q @ Freq: 55 @ 2.52MHz Frequency - Self Resonant: 6.3MHz Material - Core: Ferrite Inductance Frequency - Test: 2.52 MHz Inductance: 33 µH Current Rating (Amps): 370 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER331K | Vishay Dale | Description: IRF-36 330 10% ER E3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER3R3J | Vishay | RF inductors - Leaded 3.3 UH 5% | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER470K | Vishay / Dale | RF inductors - Leaded 47uH 10% | auf Bestellung 2848 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF36ER470K | Vishay Dale | Description: FIXED IND 47UH 340MA 1.22 OHM TH Tolerance: ±10% Packaging: Bag Package / Case: Axial Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -20°C ~ 105°C DC Resistance (DCR): 1.22Ohm Max Q @ Freq: 45 @ 2.52MHz Frequency - Self Resonant: 6.3MHz Material - Core: Ferrite Inductance Frequency - Test: 2.52 MHz Inductance: 47 µH Current Rating (Amps): 340 mA | auf Bestellung 9740 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF36ER471K | Vishay Dale | Description: FIXED IND 470UH 126MA 7.7 OHM TH Current Rating (Amps): 126 mA Inductance: 470 µH Inductance Frequency - Test: 796 kHz Material - Core: Ferrite Frequency - Self Resonant: 2.25MHz Q @ Freq: 60 @ 796kHz DC Resistance (DCR): 7.7Ohm Max Operating Temperature: -20°C ~ 105°C Shielding: Unshielded Mounting Type: Through Hole Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Package / Case: Axial Tolerance: ±10% | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER4R7K | Vishay Dale | Description: FIXED IND 4.7UH 620MA 390MOHM TH Current Rating (Amps): 620 mA Inductance: 4.7 µH Inductance Frequency - Test: 7.96 MHz Material - Core: Ferrite Frequency - Self Resonant: 80MHz Q @ Freq: 70 @ 7.96MHz DC Resistance (DCR): 390mOhm Max Operating Temperature: -20°C ~ 105°C Shielding: Unshielded Mounting Type: Through Hole Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Package / Case: Axial Tolerance: ±10% | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER4R7K | Vishay | RF inductors - Leaded 4.7 UH 10% | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER561K | Vishay Dale | Description: IRF-36 560 10% ER E3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER680K | Vishay Dale | Description: FIXED IND 68UH 306MA 1.47 OHM TH DC Resistance (DCR): 1.47Ohm Max Operating Temperature: -20°C ~ 105°C Shielding: Unshielded Mounting Type: Through Hole Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Package / Case: Axial Tolerance: ±10% Current Rating (Amps): 306 mA Inductance: 68 µH Inductance Frequency - Test: 2.52 MHz Material - Core: Ferrite Frequency - Self Resonant: 5.7MHz Q @ Freq: 40 @ 2.52MHz | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER821K | Vishay Dale | Description: FIXED IND 820UH 100MA 12 OHM TH Current Rating (Amps): 100 mA Inductance: 820 µH Inductance Frequency - Test: 796 kHz Material - Core: Ferrite Frequency - Self Resonant: 1.85MHz Q @ Freq: 55 @ 796kHz DC Resistance (DCR): 12Ohm Max Operating Temperature: -20°C ~ 105°C Shielding: Unshielded Mounting Type: Through Hole Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Package / Case: Axial Tolerance: ±10% | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36ER8R2K | Vishay Dale | Description: FIXED IND 8.2UH 530MA 520MOHM TH Current Rating (Amps): 530 mA Inductance: 8.2 µH Inductance Frequency - Test: 7.96 MHz Material - Core: Ferrite Frequency - Self Resonant: 53MHz Q @ Freq: 70 @ 7.96MHz DC Resistance (DCR): 520mOhm Max Operating Temperature: -20°C ~ 105°C Shielding: Unshielded Mounting Type: Through Hole Size / Dimension: 0.157" Dia x 0.394" L (4.00mm x 10.00mm) Package / Case: Axial Tolerance: ±10% | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF36RU151J | Vishay | Fixed Inductors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3703 | International Rectifier | N-MOSFET HEXFET 30V 210A 230W 0,0024Ω IRF3703 TIRF3703 Anzahl je Verpackung: 5 Stücke | auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF3703PBF | Infineon Technologies | MOSFETs 30V 1 N-CH HEXFET 2.8mOhms 209nC | auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF3703PBF | Infineon Technologies | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2333 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3703PBF | INFINEON | Description: INFINEON - IRF3703PBF - Leistungs-MOSFET, n-Kanal, 30 V, 210 A, 2800 µohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 210A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 230W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2800µohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 2253 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3703PBF | International Rectifier HiRel Products | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 4362 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3703PBF | Infineon Technologies | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1959 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3703PBF | Infineon Technologies | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1959 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3703PBF Produktcode: 33794
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Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Drain-Source-Spannung Uds, V: 30 V Drain-Strom Idd, A: 210 A Durchlasswiderstand Rds(on), Ohm: 0,0028 Ohm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 8250/209 Montage: THT | Produkt ist nicht verfügbar
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| IRF3703PBF | Infineon Technologies | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 15996 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3703PBF | International Rectifier | TO-220AB Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3703PBF | International Rectifier | Description: IRF3703 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 76A, 10V Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V | auf Bestellung 7666 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF3703PBF | Infineon Technologies | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3304 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3703PBF | Infineon Technologies | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 463 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3704 Produktcode: 18284
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Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
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| IRF3704 | IR | TO-220AB | auf Bestellung 16540 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704 | Infineon Technologies | Description: MOSFET N-CH 20V 77A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704 | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704L | Infineon Technologies | Description: MOSFET N-CH 20V 77A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704LPBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A TO262 Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704PBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704PBF | Infineon Technologies | MOSFETs 20V 1 N-CH HEXFET 9.0mOhms 19nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704S | Infineon / IR | MOSFETs MOSFET, 20V, 64A, 9 mOhm, 19 nC Qg, D2-Pak | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704SPBF | Infineon Technologies | MOSFETs 20V 1 N-CH HEXFET 9mOhms 19nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704SPBF Produktcode: 38392
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IRF3704STRL | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704STRL | IOR | 2000 | auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704STRR | IR | 01+ | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704STRR | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704STRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704Z Produktcode: 99465
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Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Drain-Source-Spannung Uds, V: 20 V Drain-Strom Idd, A: 47 A Durchlasswiderstand Rds(on), Ohm: 7,9 mOhm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1220/8,7 Montage: THT | Produkt ist nicht verfügbar
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| IRF3704ZCLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 67A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZCS | Infineon Technologies | Description: MOSFET N-CH 20V 67A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 350 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZCS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZCSPBF | Infineon Technologies | Trans MOSFET N-CH 20V 67A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3704ZCSPBF | Infineon Technologies | Trans MOSFET N-CH 20V 67A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3704ZCSPBF | Infineon Technologies | Trans MOSFET N-CH 20V 67A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3704ZCSTRLP | Infineon Technologies | Description: MOSFET N-CH 20V 67A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZCSTRRP | Infineon Technologies | Description: MOSFET N-CH 20V 67A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 67A TO262 Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZPBF | Infineon Technologies | MOSFETs MOSFT 20V 67A 7.9mOhm 8.7nC Qg | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZPBF | Infineon Technologies | Description: MOSFET N-CH 20V 67A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZS Produktcode: 99466
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Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH Gehäuse: D2PAK (TO-263) Drain-Source-Spannung Uds, V: 20 V Drain-Strom Idd, A: 47 A Durchlasswiderstand Rds(on), Ohm: 7,9 mOhm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1220/8,7 Montage: SMD | Produkt ist nicht verfügbar
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| IRF3704ZS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZSPBF | Infineon Technologies | Description: MOSFET N-CH 20V 67A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZSPBF | Infineon Technologies | MOSFETs 20V 1 N-CH HEXFET 11.1mOhms 8.7nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZSPBF Produktcode: 38393
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IRF3704ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 67A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3704ZSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 67A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706 | Infineon Technologies | Description: MOSFET N-CH 20V 77A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706 | IRF3706 Транзисторы HEXFET | auf Bestellung 100 Stücke: Lieferzeit 7-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IRF3706 | IRF3706 Транзисторы HEXFET | auf Bestellung 11 Stücke: Lieferzeit 7-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IRF3706L | Infineon Technologies | Description: MOSFET N-CH 20V 77A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706LPBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706PBF | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706PBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706S | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706SPBF | International Rectifier | N-кан. MOSFET 20V, 77A, 0.0085Ом, 88Вт, D2PAK (HEXFET) Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706SPBF | IR | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IRF3706STRL | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3706STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 77A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |