Produkte > IRF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
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| IRF3707ZL | Infineon Technologies | Description: MOSFET N-CH 30V 59A TO262 Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 59A TO262 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 2.25V @ 25µA Power Dissipation (Max): 57W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZPBF | Infineon Technologies | Description: MOSFET N-CH 30V 59A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZS Produktcode: 99467
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Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 30 Idd,A: 42 Rds(on), Ohm: 9.5 mOhm Ciss, pF/Qg, nC: 07.09.1210 JHGF: SMD | Produkt ist nicht verfügbar
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| IRF3707ZS | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZS | Infineon Technologies | Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZSPBF | Infineon Technologies | Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZSTRL | Infineon Technologies | Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZSTRLP | Infineon Technologies | Description: MOSFET N-CH 30V 59A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 30V 59A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3707ZSTRR | Infineon Technologies | Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3707ZSTRRP | Infineon Technologies | Description: MOSFET N-CH 30V 59A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708 | International Rectifier | N-MOSFET HEXFET 30V 62A 87W 0,012Ω IRF3708 TIRF3708 Anzahl je Verpackung: 5 Stücke | auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF3708 | Infineon Technologies | Description: MOSFET N-CH 30V 62A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 350 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708L | Infineon Technologies | Description: MOSFET N-CH 30V 62A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708PBF | Infineon Technologies | Description: MOSFET N-CH 30V 62A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708PBF | Infineon Technologies | Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708PBF | Infineon Technologies | MOSFETs MOSFT 30V 62A 12mOhm 24nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708S | Infineon Technologies | Description: MOSFET N-CH 30V 62A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 62A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708STRL | Infineon Technologies | Description: MOSFET N-CH 30V 62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 62A D2PAK Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708STRR | Infineon Technologies | Description: MOSFET N-CH 30V 62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3708STRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 62A D2PAK Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709 | Infineon Technologies | Description: MOSFET N-CH 30V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709 | auf Bestellung 5898 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IRF3709L | Infineon Technologies | Description: MOSFET N-CH 30V 90A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709LPBF | Infineon Technologies | Description: MOSFET N-CH 30V 90A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709PBF | Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1301 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709PBF | International Rectifier | Description: IRF3709 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | auf Bestellung 426 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF3709PBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF3709PBF - IRF3709 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 426 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 426 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709PBF | Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709PBF | International Rectifier HiRel Products | Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 426 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709PBF | Infineon | auf Bestellung 2950 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRF3709S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709S | Infineon Technologies | Description: MOSFET N-CH 30V 90A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 350 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 90A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709SPBF | International Rectifier | Description: HEXFET SMPS POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709STRL | Infineon Technologies | Description: MOSFET N-CH 30V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709STRLPBF | Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709STRLPBF-INF | Infineon Technologies | Description: HEXFET SMPS POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709STRR | Infineon Technologies | Description: MOSFET N-CH 30V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709STRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 90A D2PAK Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709Z Produktcode: 99468
zu Favoriten hinzufügen
Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 30 Idd,A: 62 Rds(on), Ohm: 6.3 mOhm Ciss, pF/Qg, nC: 2130/17 JHGF: THT | Produkt ist nicht verfügbar
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| IRF3709ZCL | Infineon Technologies | Description: MOSFET N-CH 30V 87A TO262 Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZCLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 87A TO262 Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZCS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZCS | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZCSTRL | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZCSTRR | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZL | Infineon Technologies | Description: MOSFET N-CH 30V 87A TO262 Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZLPBF | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.3mOhms 17nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 87A TO262 Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 79W (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZPBF | Infineon Technologies | MOSFETs MOSFT 30V 87A 6.3mOhm 17nC Qg | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZPBF | Infineon Technologies | Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709ZPBF | Infineon Technologies | Description: MOSFET N-CH 30V 87A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZPBF | International Rectifier | MOSFET N-CH 30V 87A TO220AB Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZPBF | Infineon Technologies | Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2747 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709ZPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF3709ZPBF - IRF3709 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2747 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 625 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZS | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZS Produktcode: 99469
zu Favoriten hinzufügen
Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 30 Idd,A: 62 Rds(on), Ohm: 6.3 mOhm Ciss, pF/Qg, nC: 2130/17 JHGF: SMD | Produkt ist nicht verfügbar
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| IRF3709ZSPBF | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZSTRL | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZSTRR | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1982 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709ZSTRRPBF | Infineon Technologies | MOSFETs MOSFT 30V 87A 6.3mOhm 17nC Qg | auf Bestellung 15713 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF3709ZSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 87A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3709ZSTRRPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 87A Power dissipation: 79W Case: D2PAK; TO263 On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 17nC | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3709ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3710 | Infineon | Transistor N-Channel MOSFET; 100V; 20V; 23mOhm; 57A; 200W; -55°C ~ 175°C; Equivalent: IRF3710; SP001551058; IRF3710 TIRF3710 Anzahl je Verpackung: 50 Stücke | auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF3710 | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710 | International Rectifier | Transistor N-Channel MOSFET; 100V; 20V; 23mOhm; 57A; 200W; -55°C ~ 175°C; Equivalent: IRF3710; SP001551058; IRF3710 TIRF3710 Anzahl je Verpackung: 50 Stücke | auf Bestellung 1329 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF3710 | UMW | Transistor N-Channel MOSFET; 100V; 20V; 30mOhm; 30A; 70W; -55°C ~ 175°C; Equivalent: IRF3710; SP001551058; IRF3710 UMW TIRF3710 UMW Anzahl je Verpackung: 25 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF3710 | International Rectifier/Infineon | N-канальный ПТ (Vds=100V, Id=57A@T=25C, Id=40A@T=100C, Rds=0.025 R@Vgs=10V, P=200W, -55 to 175C).... Транзистори Корпус: TO-220 Од. вим: шт Anzahl je Verpackung: 1 Stücke | verfügbar 5 Stücke: | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710 Produktcode: 23683
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Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 100 Idd,A: 57 Rds(on), Ohm: 0.023 JHGF: THT | Produkt ist nicht verfügbar
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| IRF3710-CN | CHIPNOBO | Transistor N-Channel MOSFET; 100V; 25V; 8,8mOhm; 100A; 200W; -55°C ~ 150°C; Equivalent: IRF3710; SP001551058; IRF3710-CN CHIPNOBO TIRF3710 CNB Anzahl je Verpackung: 25 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF3710-ML | MOSLEADER | Transistor N-Channel MOSFET; 100V; 20V; 10mOhm; 80A; 125W; -55°C ~ 150°C; Equivalent: IRF3710; SP001551058; IRF3710-ML MOSLEADER TIRF3710 MOS Anzahl je Verpackung: 25 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF3710BF | JRC | TO220 | auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710HR | International Rectifier | Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) | Produkt ist nicht verfügbar | Mindestbestellmenge: 8107 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710L | Infineon Technologies | Description: MOSFET N-CH 100V 57A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710LPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710LPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710LPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262 Mounting: THT Polarisation: unipolar Case: TO262 Type of transistor: N-MOSFET Technology: HEXFET® Drain current: 57A Drain-source voltage: 100V Power dissipation: 200W Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 150 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710LPBF | Infineon / IR | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710LPBF | Infineon Technologies | Description: MOSFET N-CH 100V 57A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF3710PBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 19741 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3710PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of channel: enhancement Technology: HEXFET® Gate charge: 86.7nC Kind of package: tube | auf Bestellung 578 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3710PBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 19740 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3710PBF | International Rectifier HiRel Products | Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3710PBF | INFINEON | Description: INFINEON - IRF3710PBF - Leistungs-MOSFET, n-Kanal, 100 V, 46 A, 0.023 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 46A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 150W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.023ohm | auf Bestellung 1235 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |