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ALD1105SBLAdvanced Linear Devices Inc.Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.46 EUR
50+8.37 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD1106PBLAdvanced Linear DevicesMOSFETs Quad N-Channel Array
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.74 EUR
10+11.14 EUR
100+9.34 EUR
500+8.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD1106PBLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.64 EUR
25+8.1 EUR
100+6.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD1106SBLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
auf Bestellung 3011 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.64 EUR
50+7.38 EUR
100+6.78 EUR
500+5.77 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD1107PBLAdvanced Linear Devices Inc.Description: MOSFET 4P-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.64 EUR
25+8.1 EUR
100+6.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD1107PBLAdvanced Linear DevicesMOSFETs Quad P-Channel Array
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.98 EUR
10+13.59 EUR
100+11 EUR
500+9.78 EUR
1000+8.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD1107SBLAdvanced Linear Devices Inc.Description: MOSFET 4P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.3 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110800APCLAdvanced Linear DevicesMOSFETs Quad EPAD(R) N-Ch
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.43 EUR
10+19.92 EUR
100+16.56 EUR
500+14.77 EUR
1000+13.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD110800APCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD110800ASCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD110800PCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.21 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110800SCAdvanced Linear DevicesMOSFETs Quad N-Channel EPAD Matched Pair MOSFET ArrayVgs= 0.0 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ALD110800SCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110800SCLAdvanced Linear DevicesMOSFETs Quad EPAD(R) N-Ch
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110802PCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110802SCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110804PCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110804PCLAdvanced Linear DevicesMOSFETs QUAD/DUAL N-CHANNEL
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.57 EUR
10+15.68 EUR
100+13.09 EUR
500+11.65 EUR
1000+10.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD110804SCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110804SCLAdvanced Linear DevicesMOSFETs Quad N-Channel EPAD
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.09 EUR
10+14.18 EUR
100+11.79 EUR
500+10.52 EUR
1000+9.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD110808APCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110808ASCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110808PCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110808SCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110814PCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110814SCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.88 EUR
Mindestbestellmenge: 2 Stücke
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ALD1108EPCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ALD1108ESCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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ALD110900APAAdvanced Linear DevicesMOSFET Dual N-Channel EPAD Matched Pair MOSFET ArrayVgs= 0.0 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ALD110900APALAdvanced Linear DevicesMOSFETs Dual EPAD(R) N-Ch
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.03 EUR
10+13.76 EUR
100+12.71 EUR
500+12.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD110900APALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.47 EUR
Mindestbestellmenge: 2 Stücke
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ALD110900ASALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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ALD110900PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ALD110900PALAdvanced Linear DevicesMOSFETs Dual EPAD(R) N-Ch
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.26 EUR
10+13.8 EUR
100+11.14 EUR
500+9.9 EUR
1000+8.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ALD110900SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.14 EUR
50+7.01 EUR
100+6.41 EUR
500+5.38 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ALD110902PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
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ALD110902SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.16 EUR
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ALD110904PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
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ALD110904SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
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ALD110908APALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
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ALD110908ASALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
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2+15.33 EUR
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ALD110908PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
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ALD110908SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
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ALD110914PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
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ALD110914SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
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ALD1110EPALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10V 8DIP
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ALD1110ESALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10V 8SOIC
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ALD1115MALAdvanced Linear Devices Inc.Description: MOSFET N/P-CH 10.6V 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-MSOP
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ALD1115PALAdvanced Linear Devices Inc.Description: MOSFET N/P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.89 EUR
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ALD1115SALAdvanced Linear Devices Inc.Description: MOSFET N/P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-SOIC
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ALD1116PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.04 EUR
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ALD1116SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1510 Stücke:
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2+10.64 EUR
50+5.58 EUR
100+5.09 EUR
500+4.24 EUR
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ALD1117PALAdvanced Linear DevicesMOSFETs Dual P-Channel Array
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.16 EUR
10+12.13 EUR
100+9.82 EUR
500+8.71 EUR
1000+7.72 EUR
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ALD1117PALAdvanced Linear Devices Inc.Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.47 EUR
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ALD1117SALAdvanced Linear Devices Inc.Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1086 Stücke:
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2+11.22 EUR
50+5.9 EUR
100+5.38 EUR
500+4.49 EUR
1000+4.19 EUR
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ALD111910MALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 8MSOP
Produkt ist nicht verfügbar
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ALD111910PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 8DIP
Produkt ist nicht verfügbar
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ALD111910SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 8SOIC
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ALD111933MALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8MSOP
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ALD111933PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.9V
Vgs(th) (Max) @ Id: 3.35V @ 1µA
Supplier Device Package: 8-PDIP
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ALD111933SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.9V
Vgs(th) (Max) @ Id: 3.35V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.41 EUR
50+6.06 EUR
100+5.55 EUR
500+4.63 EUR
1000+4.52 EUR
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ALD112Panasonic Electric WorksDescription: RELAY GEN PURPOSE SPST 3A 12V
Packaging: Tube
Mounting Type: Through Hole
Coil Voltage: 12VDC
Operating Temperature: -40°C ~ 70°C
Termination Style: PC Pin
Relay Type: General Purpose
Coil Current: 16.7 mA
Coil Type: Non Latching
Contact Material: Silver Nickel (AgNi)
Contact Form: SPST-NO (1 Form A)
Contact Rating (Current): 3 A
Switching Voltage: 277VAC, 30VDC - Max
Must Release Voltage: 0.6 VDC
Must Operate Voltage: 9 VDC
Operate Time: 10 ms
Release Time: 10 ms
Part Status: Obsolete
Approval Agency: CSA, TUV, UR, VDE
Load - Max Switching: 831VA, 90W
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ALD112Panasonic Industrial DevicesGeneral Purpose Relays 3A 12VDC SPST PCB
Produkt ist nicht verfügbar
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ALD112NAIS07+
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ALD1120INFINEON09+ SOP12
auf Bestellung 9140 Stücke:
Lieferzeit 21-28 Tag (e)
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ALD114804 PCAdvanced Linear DevicesMOSFET
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ALD114804APCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 380mV @ 1µA
Supplier Device Package: 16-PDIP
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ALD114804ASCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 380mV @ 1µA
Supplier Device Package: 16-SOIC
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ALD114804PCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 360mV @ 1µA
Supplier Device Package: 16-PDIP
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ALD114804SCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 360mV @ 1µA
Supplier Device Package: 16-SOIC
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ALD114813PCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 1.26V @ 1µA
Supplier Device Package: 16-PDIP
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ALD114813SCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 1.26V @ 1µA
Supplier Device Package: 16-SOIC
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ALD114835PCLAdvanced Linear DevicesMOSFETs Quad EPAD(R) N-Ch
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ALD114835PCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 540Ohm @ 0V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 3.45V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
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ALD114835SCLAdvanced Linear Devices Inc.Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 540Ohm @ 0V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 3.45V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
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ALD114835SCLAdvanced Linear DevicesMOSFETs Quad EPAD(R) N-Ch
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ALD114904APALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 380mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
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ALD114904ASALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 380mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
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ALD114904PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 360mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
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ALD114904SALAdvanced Linear DevicesMOSFETs Dual EPAD(R) N-Ch
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.8 EUR
10+7.9 EUR
100+7.2 EUR
500+6.37 EUR
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ALD114904SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 360mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.46 EUR
Mindestbestellmenge: 2 Stücke
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ALD114913PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 1.26V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
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ALD114913SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 1.26V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.52 EUR
50+6.14 EUR
Mindestbestellmenge: 2 Stücke
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ALD114935PALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 540Ohm @ 0V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 3.45V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
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ALD114935PALAdvanced Linear DevicesMOSFETs Dual EPAD(R) N-Ch
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ALD114935SALAdvanced Linear DevicesMOSFETs Dual EPAD(R) N-Ch
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ALD114935SALAdvanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 540Ohm @ 0V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 3.45V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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ALD118NAIS07+
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
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ALD118Panasonic Electric WorksDescription: RELAY GEN PURPOSE SPST 3A 18V
Load - Max Switching: 831VA, 90W
Release Time: 10 ms
Operate Time: 10 ms
Must Operate Voltage: 13.5 VDC
Must Release Voltage: 0.9 VDC
Switching Voltage: 277VAC, 30VDC - Max
Contact Rating (Current): 3 A
Contact Form: SPST-NO (1 Form A)
Contact Material: Silver Nickel (AgNi)
Coil Type: Non Latching
Coil Current: 11.1 mA
Relay Type: General Purpose
Operating Temperature: -40°C ~ 70°C
Coil Voltage: 18VDC
Mounting Type: Through Hole
Packaging: Tube
Approval Agency: CSA, TUV, UR, VDE
Termination Style: PC Pin
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ALD118PanasonicPower Relay 18VDC 3A SPST-NO(20.5x7.2x15.3)mm THT
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
55+3.18 EUR
100+2.92 EUR
200+2.65 EUR
250+2.43 EUR
500+2.23 EUR
Mindestbestellmenge: 55 Stücke
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ALD118Panasonic Industrial DevicesGeneral Purpose Relays 1 Form A 3A 277VAC 3A 30VDC 18V
Produkt ist nicht verfügbar
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ALD11G48-6LARTESYN / Advanced EnergyDescription: DC DC CONVERTER 2.5V 35W
Features: Remote On/Off, OCP, OTP, OVP, UVLO
Packaging: Tray
Package / Case: 8-DIP Module, 1/16 Brick
Size / Dimension: 1.30" L x 0.90" W x 0.34" H (33.0mm x 22.9mm x 8.6mm)
Mounting Type: Through Hole
Type: Isolated Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 75V
Efficiency: 89%
Current - Output (Max): 11A
Voltage - Input (Min): 36V
Voltage - Output 1: 2.5V
Power (Watts): 35 W
Number of Outputs: 1
Voltage - Isolation: 1.5 kV
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ALD11G48-6LArtesyn Embedded TechnologiesIsolated DC/DC Converters - Through Hole 2.5V @ 11A POS 3.7mm
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ALD11G48-LArtesyn Embedded PowerDescription: DC DC CONVERTER 2.5V 35W
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ALD11G48-SLArtesyn Embedded PowerDescription: DC DC CONVERTER 2.5V 35W
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ALD11G48N-6LArtesyn Embedded PowerDescription: DC DC CONVERTER 2.5V 35W
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ALD11G48N-LArtesyn Embedded TechnologiesIsolated DC/DC Converters - Through Hole 2.5V @ 11A Neg SMT
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ALD11G48N-LArtesyn Embedded PowerDescription: DC DC CONVERTER 2.5V 35W
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ALD11G48N-SLArtesyn Embedded PowerDescription: DC DC CONVERTER 2.5V 35W
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ALD124Panasonic Electric WorksDescription: RELAY GEN PURPOSE SPST 3A 24V
Packaging: Tube
Mounting Type: Through Hole
Coil Voltage: 24VDC
Operating Temperature: -40°C ~ 70°C
Termination Style: PC Pin
Relay Type: General Purpose
Coil Current: 8.3 mA
Coil Type: Non Latching
Contact Material: Silver Nickel (AgNi)
Contact Form: SPST-NO (1 Form A)
Contact Rating (Current): 3 A
Switching Voltage: 277VAC, 30VDC - Max
Must Release Voltage: 1.2 VDC
Must Operate Voltage: 18 VDC
Operate Time: 10 ms
Release Time: 10 ms
Part Status: Obsolete
Approval Agency: CSA, TUV, UR, VDE
Load - Max Switching: 831VA, 90W
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