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| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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| AOK50B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 50A TO247 Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 500 W Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Part Status: Active Gate Charge: 102 nC Test Condition: 400V, 50A, 6Ohm, 15V Switching Energy: 2.09mJ (on), 1.03mJ (off) Td (on/off) @ 25°C: 46ns/182ns Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Reverse Recovery Time (trr): 327 ns Input Type: Standard | auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOK53S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 53A TO247 Input Capacitance (Ciss) (Max) @ Vds: 3034 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK53S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK53S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 53A TO247 | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK5N100 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK5N100L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 120A 417mW 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 120A 417W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 137 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 32ns/74ns Switching Energy: 3.1mJ (on), 730µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 210 A Power - Max: 417 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B65H1 | AOS | IGBT 650V 60A TO-247 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 288 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 39ns/153ns Switching Energy: 2.42mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B65H2AL | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 318 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 35ns/168ns Switching Energy: 2.36mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 416 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B65H2AL Produktcode: 173446
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Lieblingsprodukt
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| AOK60B65H2AL | Alpha & Omega Semiconductor | 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 180A Mounting: THT Gate charge: 84nC Kind of package: tube Collector-emitter saturation voltage: 1.95V Turn-off switching energy: 1.17mJ Turn-on switching energy: 2.36mJ Turn-on time: 113ns Turn-off time: 270ns | auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOK60B65HQ3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 36ns/157ns Switching Energy: 2.21mJ (on), 1.2mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B65M3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 120A TO-247 Power - Max: 500 W Current - Collector Pulsed (Icm): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Gate Charge: 106 nC Test Condition: 400V, 60A, 5Ohm, 15V Switching Energy: 2.6mJ (on), 1.3mJ (off) Td (on/off) @ 25°C: 44ns/166ns Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A Reverse Recovery Time (trr): 346 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60B65M3 | AOS | IGBT 650V 60A TO-247 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60N30L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK60N30L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 300V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V Power Dissipation (Max): 658W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK66518 | Alpha & Omega Semiconductor Inc. | Description: AOK66518 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Power Dissipation (Max): 18W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK66613 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 58.5A/120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Ta), 312W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | auf Bestellung 189 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOK75B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 150A 500W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 147 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 33ns/84ns Switching Energy: 3.7mJ (on), 1.3mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 118 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 290 A Power - Max: 500 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK75B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 75A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 295 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 47ns/175ns Switching Energy: 3.77mJ (on), 2.04mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 556 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK75B65H1 | AOS | IGBT 650V 75A TO-247 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK8N80 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V 7.4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 480 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK8N80L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V 7.4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK9N90 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 900V 9A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V Power Dissipation (Max): 368W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOK9N90 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9A; Idm: 34A; 368W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 9A Pulsed drain current: 34A Power dissipation: 368W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 46nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOKS30B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 60A TO-247 Power - Max: 208 W Current - Collector Pulsed (Icm): 96 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Part Status: Not For New Designs Gate Charge: 34 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 1.1mJ (on), 240µJ (off) Td (on/off) @ 25°C: 20ns/58ns Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOKS40B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 40A TO247 Power - Max: 278 W Current - Collector Pulsed (Icm): 140 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Part Status: Not For New Designs Gate Charge: 45 nC Test Condition: 400V, 40A, 7.5Ohm, 15V Switching Energy: 1.55mJ (on), 300µJ (off) Td (on/off) @ 25°C: 29ns/74ns Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOKS40B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 40A TO247 Power - Max: 300 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Part Status: Active Gate Charge: 63 nC Test Condition: 400V, 40A, 7.5Ohm, 15V Switching Energy: 1.27mJ (on), 460µJ (off) Td (on/off) @ 25°C: 41ns/130ns Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| AOKS40B65H2AL | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 1.17mJ (on), 540µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
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