Produkte > GSF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GSFN3110 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50.00A, 30 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (3.1x3.05) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFN3110 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50.00A, 30 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (3.1x3.05) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFN3904 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80A, 30V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 24A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3904 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80A, 30V, Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 24A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 25 V | auf Bestellung 2642 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3906 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60A, 30V, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V | auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3906 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60A, 30V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3908 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 48A, 30V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 2777 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3908 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 48A, 30V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN4013 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -30.00A, - Input Capacitance (Ciss) (Max) @ Vds: 3242 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFN4013 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -30.00A, - Input Capacitance (Ciss) (Max) @ Vds: 3242 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN6982 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 75.00A, 65 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Power Dissipation (Max): 61.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 48 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN6982 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 75.00A, 65 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Power Dissipation (Max): 61.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 48 V | auf Bestellung 1710 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFNUR03210T4D | TBI Motion | Description: BALL SCREW NUT 32MM DIA 10MM LEA | auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP03101 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -100A, -30 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V | auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP03101 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -100A, -30 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP0341 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -40A, -30V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0341 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -40A, -30V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 2018 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0356 | Good-Ark Semiconductor | MOSFET N-CH 30 V 55A SMD PPAK-8 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP0356 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 55A, 30V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.2x5.55) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP0356 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 55A, 30V, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.2x5.55) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V | auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP03602 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 30V 60A 8PPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5x5.8) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP03602 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 30V 60A 8PPAK Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 15V Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5x5.8) Part Status: Active | auf Bestellung 4743 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0365 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -30A, -64V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (4.89x5.74) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V | auf Bestellung 3564 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0365 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -30A, -64V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (4.89x5.74) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP0380 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80A, 30V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP0380 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80A, 30V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0446 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 45A, 40V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 2976 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0446 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 45A, 40V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0449 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -50.00A, - Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0449 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -50.00A, - Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V | auf Bestellung 2989 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP06120 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 120A, 65V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP06120 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 120A, 65V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V | auf Bestellung 2867 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0641 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -40.00A, - Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 2.5V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 3893 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP0641 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -40.00A, - Input Capacitance (Ciss) (Max) @ Vds: 3893 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP08130 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 130A, 80V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8265 pF @ 40 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP08130 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 130A, 80V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8265 pF @ 40 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP08150 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 150A, 80V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V | auf Bestellung 2641 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP08150 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 150A, 80V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP0876 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE 80V 75A Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 40 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP0876 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE 80V 75A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 40 V | auf Bestellung 2193 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP10140 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 75A, 100V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP10140 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 75A, 100V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 2269 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP1036 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 35A, 100V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V | auf Bestellung 2968 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP1036 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 35A, 100V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP1040 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 40A, 100V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V | auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP1040 | Good-Ark | GSFP1040 | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP1040 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 40A, 100V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP1080 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80A, 100V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 105W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V | auf Bestellung 3495 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP1080 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80A, 100V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 105W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP13010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50.00A, 10 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-PPAK (4.9x5.8) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP13010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50.00A, 10 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-PPAK (4.9x5.8) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 50 V | auf Bestellung 4710 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP1526 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 25A, 150V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP1526 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 25A, 150V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Power Dissipation (Max): 101W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V | auf Bestellung 2779 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP2009 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 9.00A, 200 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 4A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PPAK (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP2009 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 9.00A, 200 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 4A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PPAK (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP2601 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -90.00A, - Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 41.67W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PPAK (4.9x5.8) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V | auf Bestellung 2989 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP2601 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -90.00A, - Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 41.67W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PPAK (4.9x5.8) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP34010 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 100V 20A 8PPAK Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 19W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-PPAK (5x6) | auf Bestellung 4560 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP34010 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 100V 20A 8PPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 19W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-PPAK (5x6) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP3944 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 45A, 30V, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP3944 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 45A, 30V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP3984 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 150A, 30V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 122W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP3984 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 150A, 30V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 122W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V | auf Bestellung 2993 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP4R310 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 136.00A, 1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.86) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4755 pF @ 50 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP4R310 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 136.00A, 1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.86) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4755 pF @ 50 V | auf Bestellung 4934 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP68015 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 15 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.86) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 518 pF @ 75 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP68015 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 15 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.86) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 518 pF @ 75 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP6886 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 65V 45A 8PPAK Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 67W (Tc) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active | auf Bestellung 2805 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP6886 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 65V 45A 8PPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 67W (Tc) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 30V Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP6901 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -72A, -60V Input Capacitance (Ciss) (Max) @ Vds: 12930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 3685 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFP6901 | Good-Ark Semiconductor | MOSFET, P-CH, SINGLE, -72A, -60V Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFP6901 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -72A, -60V Input Capacitance (Ciss) (Max) @ Vds: 12930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFPB0976 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80.00A, 10 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFPB0976 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80.00A, 10 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 50 V | auf Bestellung 2976 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFPR8504 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 280.00A, 4 Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (5.1x5.86) Vgs(th) (Max) @ Id: 2.9V @ 250µA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFPR8504 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 280.00A, 4 Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (5.1x5.86) Vgs(th) (Max) @ Id: 2.9V @ 250µA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFQ1008 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 8A, 100V, Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V | auf Bestellung 5718 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ1008 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 8A, 100V, Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ1504 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 4A, 150V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ1504 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 4A, 150V, Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ2305 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -11A, -20V Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ2305 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -11A, -20V Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ2307 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -9.6A, -20 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V Power Dissipation (Max): 2.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ2307 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -9.6A, -20 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V Power Dissipation (Max): 2.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V | auf Bestellung 2986 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ3025 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -8.00A, -3 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 10V Power Dissipation (Max): 3.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ3025 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -8.00A, -3 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 10V Power Dissipation (Max): 3.2W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFQ4616 | Good-Ark Semiconductor | Description: MOSFET N/P-CH 30V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V, 1040pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 22mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 18.6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.4V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ4616 | Good-Ark Semiconductor | Description: MOSFET N/P-CH 30V 8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V, 1040pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 22mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 18.6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.4V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ4701 | Good-Ark Semiconductor | Description: MOSFET, N+P, DUAL, 40V, SOP-8L Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ4701 | Good-Ark Semiconductor | Description: MOSFET, N+P, DUAL, 40V, SOP-8L Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.5W (Tc) Technology: MOSFET (Metal Oxide) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ4953 | Good-Ark Semiconductor | Description: MOSFET 2P-CH 30V 5.4A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 2262 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ4953 | Good-Ark Semiconductor | Description: MOSFET 2P-CH 30V 5.4A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ6806 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 60V 20A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | auf Bestellung 2596 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ6806 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 60V 20A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ6808 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 30V 5A/10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.47W (Ta), 3.6W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ6808 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 30V 5A/10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.47W (Ta), 3.6W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ6R803 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 30 Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.6W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFQ6R803 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 30 Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.6W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 1940 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFR0308 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 7A, 30V, S Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFR0308 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 7A, 30V, S Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|