Produkte > GSF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| GSFR0603 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -3.3A, -60 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V | auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFR0603 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -3.3A, -60 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFR0603 | Good-Ark | Trans MOSFET P-CH 60V 3.3A 6-Pin SOT-23 | Produkt ist nicht verfügbar | Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| GSFT06130 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -140A, -60 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V | auf Bestellung 489 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT06130 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -140A, -60 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT06150 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 150.00A, 6 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5451 pF @ 30 V | auf Bestellung 794 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT06150 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 150.00A, 6 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5451 pF @ 30 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT10020 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 106.00A, 2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 100 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT10020 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 106.00A, 2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 100 V | auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT1060 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60A, 100V, Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 50 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT1060 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60A, 100V, Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 50 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT3R110 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 180.00A, 1 Input Capacitance (Ciss) (Max) @ Vds: 10430 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 224W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube | auf Bestellung 1599 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT4R010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 120.00A, 1 Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 208W (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) | auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT4R010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 120.00A, 1 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 208W (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) FET Type: N-Channel | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT60R099 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 36.00A, 60 Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3231 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 57.8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 261W (Tj) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole | auf Bestellung 920 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT60R190 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 60 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1174 pF @ 100 V | auf Bestellung 1586 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT7R515 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 175.00A, 1 Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 376W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 175A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube | auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFT9R706 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60.00A, 60 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 13A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFTL2R710 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 200.00A, 1 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10430 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| GSFTL2R710 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 200.00A, 1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10430 pF @ 50 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU2016 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 18.00A, 20 Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube | auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU250N06 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 64A, 60V, Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 30 V | auf Bestellung 1135 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU6008 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 7.00A, 600 Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU60R190 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 60 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1174 pF @ 100 V | auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU60R360 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 11.00A, 60 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V | auf Bestellung 889 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU6513 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 13.00A, 65 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1746 pF @ 25 V | auf Bestellung 2366 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU8005 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.00A, 800 Input Capacitance (Ciss) (Max) @ Vds: 677.1 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube | auf Bestellung 988 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU80R280 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 17.00A, 80 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU9504 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5A, 950V, Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 50 V | auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFU95R500 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 10A, 950V, Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tj) Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V Power Dissipation (Max): 34W (Tj) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 50 V | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFW02009 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -0.85A, -2 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V | auf Bestellung 8970 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFW02009 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -0.85A, -2 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFW0501 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -130MA, -5 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 130mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 20 V | auf Bestellung 9995 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFW0501 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -130MA, -5 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 130mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 20 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFW3004 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 0.40A, 30V Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 200mA, 4.5V Power Dissipation (Max): 155mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 72.9 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFW3004 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 0.40A, 30V Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 200mA, 4.5V Power Dissipation (Max): 155mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 72.9 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| GSFX65R220 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 65 Packaging: Tape & Reel (TR) Package / Case: 4-VSFN, Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFX65R220 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 65 Packaging: Cut Tape (CT) Package / Case: 4-VSFN, Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1718 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| GSFYR01616A2D | TBI Motion | Description: BALL SCREW NUT 16MM DIA 16MM LEA | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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