Produkte > RQ7
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| RQ7L050ATTCR | Rohm Semiconductor | Description: PCH -60V -5A SMALL SIGNAL POWER Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) | auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ7L055BGTCR | Rohm Semiconductor | Description: NCH 60V 5.5A, TSMT8, POWER MOSFE Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V | auf Bestellung 2958 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ7L055BGTCR | ROHM | Description: ROHM - RQ7L055BGTCR - Leistungs-MOSFET, n-Kanal, 60 V, 5.5 A, 0.029 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 1.5W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.029ohm | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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| RQ7L055BGTCR | Rohm Semiconductor | Description: NCH 60V 5.5A, TSMT8, POWER MOSFE Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: N-Channel | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RQ7L055BGTCR | ROHM Semiconductor | MOSFETs TSMT8 N-CH 60V 5.5A | auf Bestellung 3216 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ7P035ATTCR | Rohm Semiconductor | Description: PCH -100V -3.5A POWER MOSFET : R Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 111mOhm @ 3.5A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V | auf Bestellung 2864 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ7P035ATTCR | ROHM Semiconductor | MOSFET Pch -100V -3.5A Power MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
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| RQ7P035ATTCR | Rohm Semiconductor | Description: PCH -100V -3.5A POWER MOSFET : R Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 111mOhm @ 3.5A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |