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AON7406ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
On-state resistance: 17mΩ
Mounting: SMD
Power dissipation: 6W
Gate charge: 7.5nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DFN3x3A
auf Bestellung 4188 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.49 EUR
336+0.25 EUR
376+0.23 EUR
421+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 173 Stücke
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AON7406Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 25A 8-Pin DFN-A EP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7406LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8DFN
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7407ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
auf Bestellung 6752 Stücke:
Lieferzeit 14-21 Tag (e)
80+1.07 EUR
148+0.58 EUR
246+0.35 EUR
274+0.31 EUR
309+0.27 EUR
1000+0.25 EUR
5000+0.24 EUR
Mindestbestellmenge: 80 Stücke
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AON7407Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AON7407Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.44 EUR
10000+0.4 EUR
15000+0.39 EUR
25000+0.37 EUR
35000+0.36 EUR
Mindestbestellmenge: 5000 Stücke
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AON7407Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.36 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7407
Produktcode: 135359
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Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
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AON7407Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.4 EUR
10000+0.36 EUR
15000+0.33 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7407ALPHATransistor P-Channel MOSFET; 20V; 8V; 18mOhm; 40A; 29W; -55°C ~ 150°C; AON7407 TAON7407
Anzahl je Verpackung: 50 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.64 EUR
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7407Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
auf Bestellung 137612 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.49 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7408
Produktcode: 84416
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Transistoren > MOSFET N-CH
8542 39 90 00
Produkt ist nicht verfügbar
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AON7408ALPHATransistor N-Channel MOSFET; 30V; 20V; 32mOhm; 18A; 11W; -55°C ~ 150°C; AON7408 TAON7408
Anzahl je Verpackung: 44 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
44+0.75 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7408Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 10A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7408ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 4.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of channel: enhancement
auf Bestellung 2242 Stücke:
Lieferzeit 14-21 Tag (e)
211+0.4 EUR
410+0.2 EUR
459+0.19 EUR
506+0.17 EUR
Mindestbestellmenge: 211 Stücke
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AON7408Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 10A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7408LAOSQFN-8 09+
auf Bestellung 6200 Stücke:
Lieferzeit 21-28 Tag (e)
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AON7408LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 7.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 20A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
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AON7409Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 16A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
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AON7410Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.25 EUR
10000+0.23 EUR
15000+0.21 EUR
25000+0.2 EUR
50000+0.19 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7410AOSMOSFET N-CH 30V 9.5A/24A 8DFN Транзистори
Produkt ist nicht verfügbar
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AON7410ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of channel: enhancement
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
195+0.44 EUR
385+0.23 EUR
435+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 195 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7410Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 9.5A 8-Pin DFN-A EP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7410ALPHA&OMEGATransistor N-Channel MOSFET; 30V; 20V; 29mOhm; 24A; 20W; -55°C ~ 150°C; AON7410 TAON7410
Anzahl je Verpackung: 100 Stücke
auf Bestellung 170 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.43 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7410
Produktcode: 124521
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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AON7410Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 203561 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.15 EUR
30+0.71 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
2000+0.27 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7410LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7410L_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/24A 8DFN
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7410L_105Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8A/20A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7410_106Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/24A 8DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 24A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7412Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 10A/16A 8DFN
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 466 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7412Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 10A/16A 8DFN
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 466 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7414Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 15.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7416Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 14A/40A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7416Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 14A/40A 8DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7416ALPHATransistor N-Channel MOSFET; 30V; 12V; 13,5mOhm; 40A; 25W; -55°C ~ 150°C; AON7416 TAON7416
Anzahl je Verpackung: 50 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.73 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7416_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 14A/40A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7418Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 50A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON7418Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 46A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2994 pF @ 15 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.93 EUR
6000+0.87 EUR
9000+0.83 EUR
15000+0.8 EUR
Mindestbestellmenge: 3000 Stücke
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AON7418Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 50A 8-Pin DFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.79 EUR
Mindestbestellmenge: 3000 Stücke
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AON7418Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 50A 8-Pin DFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.8 EUR
Mindestbestellmenge: 3000 Stücke
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AON7418ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 33W; DFN3.3x3.3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 33W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON7418Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 46A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2994 pF @ 15 V
auf Bestellung 68780 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.45 EUR
10+2.19 EUR
100+1.46 EUR
500+1.15 EUR
1000+1.06 EUR
Mindestbestellmenge: 7 Stücke
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AON7418AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2994 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7418_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 46A/50A 8DFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2994 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 715 Stücke
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AON7421Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 30A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 10 V
auf Bestellung 13782 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
10+2.21 EUR
100+1.49 EUR
500+1.18 EUR
1000+1.07 EUR
Mindestbestellmenge: 6 Stücke
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AON7421ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -39A; 33W; DFN3.3x3.3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -39A
Power dissipation: 33W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±12V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON7421Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 30A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.94 EUR
6000+0.88 EUR
9000+0.84 EUR
Mindestbestellmenge: 3000 Stücke
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AON7421Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 50A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON7422EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 20A/40A 8DFN
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7422E_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 15 V
Produkt ist nicht verfügbar
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AON7422GAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 30V 32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.82 EUR
19+1.13 EUR
100+0.74 EUR
500+0.56 EUR
1000+0.51 EUR
2000+0.46 EUR
Mindestbestellmenge: 12 Stücke
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AON7422GALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Dimensions: 3x3mm
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.94 EUR
269+0.32 EUR
304+0.29 EUR
325+0.26 EUR
Mindestbestellmenge: 91 Stücke
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AON7422GAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 30V 32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AON7422GSAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 8SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7423
Produktcode: 129885
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Transistoren > Transistoren P-Kanal-Feld
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AON7423ALPHA&OMEGATrans MOSFET P-CH 20V 50A 8-Pin DFN EP T/R AON7423 TAON7423
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.2 EUR
Mindestbestellmenge: 30 Stücke
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AON7423Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 28A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 4.5V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 10 V
auf Bestellung 3507 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.09 EUR
11+1.96 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.94 EUR
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AON7423Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 50A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
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AON7423ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -39A; 33W; DFN3.3x3.3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -39A
Power dissipation: 33W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±8V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
auf Bestellung 3070 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.98 EUR
169+0.5 EUR
191+0.44 EUR
210+0.4 EUR
500+0.38 EUR
Mindestbestellmenge: 88 Stücke
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AON7423Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 28A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 4.5V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.81 EUR
Mindestbestellmenge: 3000 Stücke
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AON7423AOSTransistor: P-MOSFET; unipolar; -20V; -39A; 33W; DFN3.3x3.3 EP Транзистори
Produkt ist nicht verfügbar
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AON7424Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AON7426Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A/40A 8DFN
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Produkt ist nicht verfügbar
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AON7426_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A/40A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7428Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 50A 8-Pin DFN EP
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AON7428ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 33W; DFN3.3x3.3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 33W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
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AON7428Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 34A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 15 V
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6+3.58 EUR
10+2.27 EUR
100+1.54 EUR
500+1.21 EUR
1000+1.11 EUR
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AON7428AOSMOSFET N-CH 30V 34A/50A 8DFN Транзистори
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AON7428Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 34A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 15 V
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AON7430Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 13A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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AON7430ALPHA&OMEGATransistor N-Channel MOSFET; 30V; 20V; 19mOhm; 34A; 23W; -55°C ~ 150°C; AON7430 TAON7430
Anzahl je Verpackung: 100 Stücke
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100+0.46 EUR
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AON7430
Produktcode: 167193
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
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AON7430ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 9W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 9W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
auf Bestellung 2726 Stücke:
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379+0.23 EUR
428+0.2 EUR
500+0.18 EUR
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AON7430LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9A/20A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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AON7432Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 10.5A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 813 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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AON7432Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 10.5A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 813 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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AON7436Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 9A/23A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 16.7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
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AON7436Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 9A/23A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 16.7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
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AON7440Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 28A/50A 8DFN
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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AON7442Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2994 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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AON7442ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 33W; DFN3.3x3.3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 33W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
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AON7442Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 50A 8-Pin DFN EP T/R
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AON7444Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 9A/33A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
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AON7444LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 8DFN
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7446Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 3.3A/8A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 16.7W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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AON7446Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 3.3A/8A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 16.7W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7448Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 7.1A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
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AON7448Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 7.1A/24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
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AON7448LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 8DFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7450Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 5.6A/21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 7.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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AON7450Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 5.6A/21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 7.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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AON7450LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8DFN
Packaging: Tape & Reel (TR)
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AON7452Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 2.5A/5.5A 8DFN
Vgs(th) (Max) @ Id: 4.7V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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AON7452Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 2.5A/5.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 4.7V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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AON7452LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8DFN
Packaging: Tape & Reel (TR)
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AON7458ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.2A; 13W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.2A
Power dissipation: 13W
Case: DFN8
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
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 Mindestbestellmenge: 5000 Stücke
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AON7458Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 250V 1.5A/5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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AON7460Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 300V 1.2A/4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 830mOhm @ 1.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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AON7460Alpha & Omega SemiconductorTrans MOSFET N-CH 300V 4A 8-Pin DFN-A EP
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