Produkte > NSB
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| NSBC143TPDXV | ONSEMI | Description: ONSEMI - NSBC143TPDXV - TRANS PREBIAS NPN-PNP SOT563 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 148000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143TPDXV | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | auf Bestellung 148000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143TPDXV6T1 | ONSEMI | Description: ONSEMI - NSBC143TPDXV6T1 - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143TPDXV6T1 | onsemi | Description: TRANS BR NPN/PNP DUAL 50V SOT563 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143TPDXV6T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC143TPDXV6T1 | onsemi | Description: TRANS BR NPN/PNP DUAL 50V SOT563 Packaging: Bulk | auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143TPDXV6T1 | onsemi | Digital Transistors 100mA Complementary | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143TPDXV6T1G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143TPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: SOT-563 Resistor - Base (R1): 4.7kOhms | auf Bestellung 3926 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143TPDXV6T1G | onsemi | Digital Transistors 100mA Complementary 50V Dual NPN & PNP | auf Bestellung 6334 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143TPDXV6T1G | ONSEMI | Description: ONSEMI - NSBC143TPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4771144 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143TPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Supplier Device Package: SOT-563 Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143TPDXV6T1G | auf Bestellung 716 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC143TPDXV6T5 | ONSEMI | Description: ONSEMI - NSBC143TPDXV6T5 - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 104000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143TPDXV6T5 | onsemi | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | auf Bestellung 104000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143TPDXV6T5G | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143XMXWTBG | onsemi | Digital Transistors NBRT, 50V, XDFNW3 | auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143XMXWTBG | onsemi | Description: BIAS RESISTOR TRANSISTORS (BRT) Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 | auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Part Status: Active Supplier Device Package: SOT-963 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Cut Tape (CT) | auf Bestellung 1864 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZDP6T5G | ON Semiconductor | auf Bestellung 7300 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBC143ZDP6T5G | onsemi | Digital Transistors DUAL NBRT | auf Bestellung 2521 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZDXV6T1 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC143ZDXV6T1 | ONSEMI | Description: ONSEMI - NSBC143ZDXV6T1 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 9516 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 9516 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZDXV6T1 | onsemi | Description: TRANS 2NPN PREBIAS 0.5W SOT563 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZDXV6T1G | ONSEMI | Description: ONSEMI - NSBC143ZDXV6T1G - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-563 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4060 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA | auf Bestellung 7998 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZDXV6T1G | onsemi | Digital Transistors SOT-563 DUAL 4.7/47 K OH | auf Bestellung 58821 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZDXV6T1G | ONSEMI | Description: ONSEMI - NSBC143ZDXV6T1G - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-563 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4060 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZDXV6T5G | onsemi | Description: TRANS 2NPN PREBIAS 0.5W SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZDXV6T5G | onsemi | Bipolar Transistors - Pre-Biased SOT-563 DUAL 4.7/47 K OH | auf Bestellung 7900 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZF3 | onsemi | SOT-1123 NBRT TRANSISTOR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZF3T5G | onsemi | Digital Transistors SOT-1123 NBRT TRANSISTOR | auf Bestellung 2756 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZF3T5G | ON Semiconductor | Trans Digital BJT NPN 50V 0.1A 297mW 3-Pin SOT-1123 T/R | auf Bestellung 7950 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZF3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZF3T5G | ON Semiconductor | Trans Digital BJT NPN 50V 0.1A 297mW 3-Pin SOT-1123 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZF3T5G | ON Semiconductor | Trans Digital BJT NPN 50V 0.1A 297mW 3-Pin SOT-1123 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZF3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | auf Bestellung 7370 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZF3T5G | ON Semiconductor | Trans Digital BJT NPN 50V 0.1A 297mW 3-Pin SOT-1123 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZMXWTBG | onsemi | Description: BIAS RESISTOR TRANSISTORS (BRT) Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | auf Bestellung 80727 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZMXWTBG | onsemi | Digital Transistors NBRT, 50V, XDFNW3 | auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Part Status: Active Supplier Device Package: SOT-963 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA | auf Bestellung 536000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDP6T5G | onsemi | Digital Transistors BRT COMPLEMENTARY | auf Bestellung 14786 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-963 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA | auf Bestellung 536000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDXV6T | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Bulk | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDXV6T | ONSEMI | Description: ONSEMI - NSBC143ZPDXV6T - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZPDXV6T1 | ONSEMI | Description: ONSEMI - NSBC143ZPDXV6T1 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZPDXV6T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC143ZPDXV6T1 | onsemi | Description: TRANS BR NPN/PNP DUAL 50V SOT563 Packaging: Bulk | auf Bestellung 92000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDXV6T1G | ONSEMI | Description: ONSEMI - NSBC143ZPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 64000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 44000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDXV6T1G | ON Semiconductor | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBC143ZPDXV6T1G | ONSEMI | Description: ONSEMI - NSBC143ZPDXV6T1G - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 50 V, 50 V, 100 mA, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-563 Dauerkollektorstrom: 100mA Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (25-Jun-2025) | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 29 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 44000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDXV6T1G | onsemi | Digital Transistors SOT-563 DUAL 4.7/47 K OH | auf Bestellung 3214 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDXV6T1G | ONSEMI | Description: ONSEMI - NSBC143ZPDXV6T1G - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 50 V, 50 V, 100 mA, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-563 Dauerkollektorstrom: 100mA Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (25-Jun-2025) | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZPDXV6T5 | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZPDXV6T5 | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 7950 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143ZPDXV6T5 | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC143ZPDXV6T5G | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC143ZPDXV6T5G | ONSEMI | Description: ONSEMI - NSBC143ZPDXV6T5G - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 52000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143ZPDXV6T5G | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 52000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-963 | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDP6T5G | ONSEMI | Description: ONSEMI - NSBC144EDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 152000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC144EDP6T5G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 408mW 6-Pin SOT-963 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC144EDP6T5G | onsemi | Digital Transistors SOT-963 DUAL NBRT | auf Bestellung 7965 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDP6T5G | ON Semiconductor | auf Bestellung 4100 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBC144EDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Supplier Device Package: SOT-963 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Cut Tape (CT) | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDXV6T1 | auf Bestellung 6905 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC144EDXV6T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 500mW 6-Pin SOT-563 T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC144EDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDXV6T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 500mW 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC144EDXV6T1G | ON | 09+ | auf Bestellung 16018 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC144EDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDXV6T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 500mW 6-Pin SOT-563 T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC144EDXV6T1G | onsemi | Digital Transistors 100mA 50V Dual NPN | auf Bestellung 15143 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDXV6T5 | onsemi | Description: TRANS BRT NPN DUAL 50V SOT563 Packaging: Bulk | auf Bestellung 7995 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDXV6T5G | auf Bestellung 6650 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC144EDXV6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Bulk | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EDXV6T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | auf Bestellung 6540 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC144EDXV6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC144EF3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EF3T5G | onsemi | Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR | auf Bestellung 4926 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EF3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EF3T5G | ONSEMI | Description: ONSEMI - NSBC144EF3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 250222 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC144EMXWTBG | onsemi | Description: BIAS RESISTOR TRANSISTORS (BRT) Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EMXWTBG | onsemi | Digital Transistors NBRT, 50V, XDFNW3 | auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EMXWTBG | onsemi | Description: BIAS RESISTOR TRANSISTORS (BRT) Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EPDP6T5G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT963 Supplier Device Package: SOT-963 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Bulk | auf Bestellung 320000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EPDP6T5G | onsemi | Bipolar Transistors - Pre-Biased SOT-963 COMP BRT | auf Bestellung 2649 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EPDP6T5G | ONSEMI | Description: ONSEMI - NSBC144EPDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 299290 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC144EPDP6T5G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT963 Supplier Device Package: SOT-963 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC144EPDXV6T1 | onsemi | Description: TRANS BR NPN/PNP DUAL 50V SOT563 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC144EPDXV6T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC144EPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EPDXV6T1G | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC144EPDXV6T1G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC144EPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 27490 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC144EPDXV6T1G | onsemi | Digital Transistors 100mA Complementary 50V Dual NPN & PNP | auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
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