Produkte > AOE

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AOE66410Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOE66410ALPHA & OMEGA SEMICONDUCTORAOE66410 SMD N channel transistors
Produkt ist nicht verfügbar
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AOE6930Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 22A/85A T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOE6930Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOE6930Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 22A/85A 8-Pin DFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AOE6930ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/85A; 9.6/30W; DFN5x6
Case: DFN5x6
Mounting: SMD
Semiconductor structure: asymmetric
Gate-source voltage: ±12V; ±20V
Drain-source voltage: 30V
Drain current: 22/85A
On-state resistance: 4.3/0.83mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6/30W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 956 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.14 EUR
37+1.94 EUR
43+1.70 EUR
46+1.57 EUR
49+1.49 EUR
3000+1.43 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
AOE6930Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 22A/85A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOE6930Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 2014 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.96 EUR
10+3.22 EUR
100+2.22 EUR
500+1.80 EUR
1000+1.66 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
AOE6930ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/85A; 9.6/30W; DFN5x6
Case: DFN5x6
Mounting: SMD
Semiconductor structure: asymmetric
Gate-source voltage: ±12V; ±20V
Drain-source voltage: 30V
Drain current: 22/85A
On-state resistance: 4.3/0.83mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6/30W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
auf Bestellung 956 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
37+1.94 EUR
43+1.70 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
AOE6930Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 22A/85A 8-Pin DFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.33 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AOE6932ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 55/85A; 9.6/20W; DFN5x6
Case: DFN5x6
Mounting: SMD
Semiconductor structure: asymmetric
Gate-source voltage: ±12V; ±20V
Drain-source voltage: 30V
Drain current: 55/85A
On-state resistance: 5/1.4mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6/20W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2502 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
56+1.29 EUR
61+1.19 EUR
64+1.13 EUR
1000+1.12 EUR
3000+1.09 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
AOE6932Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
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AOE6932
Produktcode: 182233
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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AOE6932ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 55/85A; 9.6/20W; DFN5x6
Case: DFN5x6
Mounting: SMD
Semiconductor structure: asymmetric
Gate-source voltage: ±12V; ±20V
Drain-source voltage: 30V
Drain current: 55/85A
On-state resistance: 5/1.4mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6/20W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 2502 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
56+1.29 EUR
61+1.19 EUR
64+1.13 EUR
1000+1.12 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
AOE6932Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 55A/85A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOE6932Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 55A/85A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOE6932Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 2922 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.60 EUR
10+2.15 EUR
100+1.72 EUR
500+1.45 EUR
1000+1.23 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AOE6936Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOE6936Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 55A/85A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOE6936Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 2039 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.40 EUR
10+2.16 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.07 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
AOE6936ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 35/67A; 9.6/15W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35/67A
Power dissipation: 9.6/15W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 5/2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1648 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.49 EUR
54+1.33 EUR
61+1.17 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
AOE6936ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 35/67A; 9.6/15W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35/67A
Power dissipation: 9.6/15W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 5/2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
auf Bestellung 1648 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
54+1.33 EUR
61+1.17 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
AOE6936 транзистор
Produktcode: 199060
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH