Produkte > B2M
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||
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| B2M-E3/45 | Vishay General Semiconductor | Bridge Rectifiers 0.5 Amp 200 Volt | auf Bestellung 8935 Stücke: Lieferzeit 10-14 Tag (e) |
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| B2M-E3/45 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1P 200V 500MA MBM | auf Bestellung 5556 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2M-E3/45 | VISHAY | B2M-E3/45 SMD/THT sing. phase diode bridge rectif. | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2M-E3/45 | Vishay | Diode Rectifier Bridge Single 200V 0.5A 4-Pin Case MBM Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2M032120Y | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 60A Pulsed drain current: 190A Power dissipation: 375W Case: TO247PLUS-4 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Anzahl je Verpackung: 1 Stücke | auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2M032120Y | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 60A Pulsed drain current: 190A Power dissipation: 375W Case: TO247PLUS-4 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC | auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2M065120H | BASiC SEMICONDUCTOR | B2M065120H THT N channel transistors | auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2M065120R | BASiC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Pulsed drain current: 85A Power dissipation: 150W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2M065120R | BASiC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Pulsed drain current: 85A Power dissipation: 150W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Anzahl je Verpackung: 1 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2M065120Z | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 33A Pulsed drain current: 85A Power dissipation: 250W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Anzahl je Verpackung: 1 Stücke | auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2M065120Z | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 33A Pulsed drain current: 85A Power dissipation: 250W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2M2S-D | Panduit | Wire Labels & Markers Marker Tie, Metal Barb, 8.0L (203mm), Standard, Nylon, Natural | auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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| B2M2S-D | Panduit Corp | Description: MARKER TIE NATURAL 50LB 8" Packaging: Bulk Color: Natural Mounting Type: Free Hanging (In-Line) Material: Polyamide (PA66), Nylon 6/6 Tensile Strength: 50 lbs (22.68 kg) Wire/Cable Tie Type: Marker Strap/Flag Tie Width: 0.185" (4.70mm) Bundle Diameter: 2.00" (50.80mm) Part Status: Active Length - Actual: 0.667' (203.20mm, 8.00") Length - Approximate: 8" | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2M2S-D0 | Panduit | Cable Ties MKR Tie Metal Barb 8.0L (203mm) S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2M2S-D0 | Panduit Corp | Description: MARKER TIE BLACK 50LB 8" Packaging: Bulk Features: Weather Resistant Color: Black Mounting Type: Free Hanging (In-Line) Material: Polyamide (PA66), Nylon 6/6 Tensile Strength: 50 lbs (22.68 kg) Wire/Cable Tie Type: Marker Strap/Flag Tie Width: 0.185" (4.70mm) Bundle Diameter: 2.00" (50.80mm) Length - Actual: 0.667' (203.20mm, 8.00") Length - Approximate: 8" | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2MA4.5Z | NAIS | 07+ | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |