Produkte > NP9

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
NP9PRO POWERDescription: PRO POWER - NP9 - Befestigungselement, Klemme, Kabelklemme, Befestigung mit Schraube, 22.8 mm, Schwarz, 28.5 mm
tariffCode: 85469090
Material der Kabelklemme/des Kabelclips: -
productTraceability: No
rohsCompliant: NA
Außenlänge: 28.5mm
euEccn: NLR
hazardous: false
Kabelklemme/Kabelclip: Kabelklemme, Befestigung mit Schraube
rohsPhthalatesCompliant: TBA
Höhe: 43.2mm
Farbe der Kabelklemme/des Kabelclips: Schwarz
Innendurchmesser: 22.8mm
usEccn: EAR99
Außenbreite: 19mm
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
NP909359G01
auf Bestellung 75 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N03VHG
auf Bestellung 4322 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N03VHG-E1-AYRenesas ElectronicsMOSFET MOSFET
Produkt ist nicht verfügbar
NP90N03VHG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NP90N03VLG
auf Bestellung 2344 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N03VLG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NP90N03VLG-E1-AYRenesas ElectronicsMOSFET Single MOSFET, Pch SC-95/SOT-6
Produkt ist nicht verfügbar
NP90N03VUG
auf Bestellung 5555 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N03VUG-E1-AYRenesasTrans MOSFET N-CH 30V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NP90N03VUG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 30V 90A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
158+4.56 EUR
Mindestbestellmenge: 158
NP90N04MUG
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04MUG-S18-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V
Power Dissipation (Max): 1.8W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Produkt ist nicht verfügbar
NP90N04MUG-S18-AYRenesasTO220-3/N-CHANNEL POWER MOS FET VDSS=40V, ID=90A, RDSON=3MOHM NP90N04
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
NP90N04MUK
auf Bestellung 3789 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04MUK-S18-AYRenesas ElectronicsMOSFET MOSFET
Produkt ist nicht verfügbar
NP90N04MUK-S18-AYRenesasMP-25K/TO-220NCH, SINGLE, MP-25K/TO-220, 40V, ID(DC)90A, Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NP90N04MUK-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 40V 90A TO220
Produkt ist nicht verfügbar
NP90N04NUK
auf Bestellung 4784 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04NUK-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 40V 90A TO262
Produkt ist nicht verfügbar
NP90N04PDH
auf Bestellung 2344 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04PUF
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04PUF-E1-AY/J
auf Bestellung 1300 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04PUH
auf Bestellung 3432 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04VDG
auf Bestellung 4222 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04VDG-E1-AYRenesasTrans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NP90N04VDG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 90A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
164+4.5 EUR
Mindestbestellmenge: 164
NP90N04VDK-E1-AYRenesas Electronics CorporationDescription: POWER DEVICE AUTOMOTIVE MOS MP-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4323 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.07 EUR
10+ 4.21 EUR
100+ 3.35 EUR
500+ 2.83 EUR
1000+ 2.4 EUR
Mindestbestellmenge: 6
NP90N04VDK-E1-AYRenesas Electronics CorporationDescription: POWER DEVICE AUTOMOTIVE MOS MP-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.28 EUR
Mindestbestellmenge: 2500
NP90N04VDK-E1-AYRenesas ElectronicsMOSFET POWER DEVICE AUTOMOTIVE MOS MP-3ZP ANL
auf Bestellung 2495 Stücke:
Lieferzeit 14-28 Tag (e)
11+4.99 EUR
13+ 4.13 EUR
100+ 3.3 EUR
250+ 3.17 EUR
500+ 2.78 EUR
1000+ 2.36 EUR
2500+ 2.24 EUR
Mindestbestellmenge: 11
NP90N04VLG-E1-AYRenesasTrans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NP90N04VLG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 90A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
164+4.5 EUR
Mindestbestellmenge: 164
NP90N04VLK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N04VLK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.48 EUR
5000+ 2.39 EUR
Mindestbestellmenge: 2500
NP90N04VLK-E1-AYRenesas ElectronicsMOSFET POWER MOSFET
auf Bestellung 2333 Stücke:
Lieferzeit 14-28 Tag (e)
10+5.51 EUR
12+ 4.6 EUR
100+ 3.64 EUR
250+ 3.35 EUR
500+ 3.04 EUR
1000+ 2.6 EUR
2500+ 2.49 EUR
Mindestbestellmenge: 10
NP90N04VUG(1)-E1-AYRenesasOld Part NP90N04VUG(1)-E1-AY^NEC
Produkt ist nicht verfügbar
NP90N04VUG-E1-AYRenesas ElectronicsMOSFET MP-3ZP PoTr-MOSFET Low
Produkt ist nicht verfügbar
NP90N04VUG-E1-AYRenesas Electronics America IncDescription: MOSFET N-CH 40V 90A TO252
Produkt ist nicht verfügbar
NP90N04VUG-E1-AYRenesas Electronics America IncDescription: MOSFET N-CH 40V 90A TO252
Produkt ist nicht verfügbar
NP90N04VUK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
auf Bestellung 7480 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.02 EUR
10+ 4.51 EUR
100+ 3.63 EUR
500+ 2.98 EUR
1000+ 2.47 EUR
Mindestbestellmenge: 6
NP90N04VUK-E1-AYRenesas ElectronicsMOSFET POWER DEVICE E AUTOMOTIVE MOS MP-3ZP
Produkt ist nicht verfügbar
NP90N04VUK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.3 EUR
5000+ 2.21 EUR
Mindestbestellmenge: 2500
NP90N055MUK-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 55V 90A TO220-3
Produkt ist nicht verfügbar
NP90N055NUK-S18-AYRenesas ElectronicsMOSFET MOSFET
Produkt ist nicht verfügbar
NP90N055NUK-S18-AYRenesas Electronics America IncDescription: MOSFET N-CH 55V 90A TO262-3
Produkt ist nicht verfügbar
NP90N055VDG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 55V 90A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
171+4.33 EUR
Mindestbestellmenge: 171
NP90N055VDG-E1-AYRenesasTrans MOSFET N-CH 55V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NP90N055VUG-E1-AYRenesasTrans MOSFET N-CH 55V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NP90N055VUG-E1-AYRenesas Electronics AmericaDescription: MOSFET N-CH 55V 90A TO-252
Produkt ist nicht verfügbar
NP90N055VUG-E1-AYRenesas Electronics AmericaDescription: MOSFET N-CH 55V 90A TO-252
Produkt ist nicht verfügbar
NP90N055VUG-E1-AYRenesas Electronics AmericaDescription: MOSFET N-CH 55V 90A TO-252
Produkt ist nicht verfügbar
NP90N055VUK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 55V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 45A, 5V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 4797 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.78 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.27 EUR
Mindestbestellmenge: 6
NP90N055VUK-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 55V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 45A, 5V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.16 EUR
Mindestbestellmenge: 2500
NP90N055VUK-E1-AYRenesas ElectronicsMOSFET MOSFET
auf Bestellung 2477 Stücke:
Lieferzeit 14-28 Tag (e)
11+4.89 EUR
13+ 4.06 EUR
100+ 3.25 EUR
500+ 2.73 EUR
1000+ 2.32 EUR
2500+ 2.2 EUR
5000+ 2.13 EUR
Mindestbestellmenge: 11
NP90N06VDK-E1-AYRenesas Electronics CorporationDescription: POWER TRANSISTOR N-CH AUTO POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3201 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.86 EUR
10+ 4.02 EUR
100+ 3.2 EUR
500+ 2.71 EUR
1000+ 2.3 EUR
Mindestbestellmenge: 6
NP90N06VDK-E1-AYRenesas ElectronicsMOSFET POWER TRANSISTOR N-CH AUTO POWER MOSFET
auf Bestellung 2047 Stücke:
Lieferzeit 14-28 Tag (e)
11+4.86 EUR
13+ 4.03 EUR
100+ 3.22 EUR
250+ 2.96 EUR
500+ 2.68 EUR
1000+ 2.31 EUR
2500+ 2.2 EUR
Mindestbestellmenge: 11
NP90N06VDK-E1-AYRenesas Electronics CorporationDescription: POWER TRANSISTOR N-CH AUTO POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.18 EUR
Mindestbestellmenge: 2500
NP90N06VLG
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
NP90N06VLG-E1-AYRenesas ElectronicsMOSFET POWER DEVICE E AUTO MOS MP-3ZP UMOS4
Produkt ist nicht verfügbar
NP90N06VLG-E1-AYRenesas Electronics CorporationDescription: MOSFET N-CH 60V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
NP90N06VLK-E1-AYRenesas Electronics CorporationDescription: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.89 EUR
10+ 4.06 EUR
100+ 3.23 EUR
500+ 2.74 EUR
1000+ 2.32 EUR
Mindestbestellmenge: 6
NP90N06VLK-E1-AYRenesas Electronics CorporationDescription: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.21 EUR
Mindestbestellmenge: 2500
NP90N06VLK-E1-AYRenesas ElectronicsMOSFET POWER TRS2 AUTOMOTIVE MOS MP-3ZP ANL2
auf Bestellung 1780 Stücke:
Lieferzeit 14-28 Tag (e)
11+4.91 EUR
13+ 4.08 EUR
100+ 3.25 EUR
250+ 2.99 EUR
500+ 2.7 EUR
1000+ 2.34 EUR
2500+ 2.22 EUR
Mindestbestellmenge: 11
NP915GIWRATM18IAntenna Technologies Limited CompanyDescription: 915 MHZ GROUND IND SLOT OMNI
Features: Cable - 457.2mm
Packaging: Box
Mounting Type: Adhesive
Frequency Range: 890MHz ~ 960MHz
Gain: 2.5dBi
Termination: TNC Male
Number of Bands: 1
VSWR: 1.5
Frequency (Center/Band): 925MHz
Part Status: Active
Power - Max: 50 W
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
1+918.58 EUR
NP915WGIR3MMX9IAntenna Technologies Limited CompanyDescription: 915 MHZ GROUND IND SLOT OMNI
Features: Cable - 228.6mm
Packaging: Box
Mounting Type: Adhesive
Frequency Range: 890MHz ~ 960MHz
Gain: 2.5dBi
Termination: MMCX Male
Number of Bands: 1
VSWR: 1.5
Frequency (Center/Band): 925MHz
Part Status: Active
Power - Max: 50 W
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
1+951.63 EUR
NP925GIL1RPSM50FAntenna Technologies Limited CompanyDescription: 925 MHZ GROUND IND SLOT OMNI
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
NP925GITM20FAntenna Technologies Limited CompanyDescription: 925 MHZ GROUND IND SLOT OMNI
Packaging: Box
Features: Cable - 6.09m
Mounting Type: Adhesive
Frequency Range: 902MHz ~ 928MHz
Gain: 2.5dBi
Termination: TNC Male
Number of Bands: 1
VSWR: 1.5
Frequency (Center/Band): 915MHz
Part Status: Active
Power - Max: 50 W
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
1+974.22 EUR
NP9353BCPZ
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
NP97125B
auf Bestellung 198 Stücke:
Lieferzeit 21-28 Tag (e)
NP975831 REV 03AavidHeat Sinks Custom Rev. 03
Produkt ist nicht verfügbar