Produkte > PJL

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
PJL-48V200WBAADelta ElectronicsSwitching Power Supplies 200W / 48V - Open Frame PFC
auf Bestellung 53 Stücke:
Lieferzeit 14-28 Tag (e)
1+192.3 EUR
10+ 180.65 EUR
25+ 174.82 EUR
36+ 168.95 EUR
108+ 163.12 EUR
252+ 160.21 EUR
504+ 157.3 EUR
PJL-48V400WBAADelta ElectronicsSwitching Power Supplies 400W / 48V - Open Frame PFC
auf Bestellung 68 Stücke:
Lieferzeit 486-500 Tag (e)
1+296.45 EUR
5+ 287.3 EUR
10+ 278.2 EUR
25+ 269.07 EUR
36+ 259.92 EUR
108+ 250.82 EUR
252+ 246.25 EUR
PJL-PO-1Panduit CorpDescription: LABEL PANJACK DM WHITE
Produkt ist nicht verfügbar
PJL-PO-1RPanduit CorpDescription: LABEL PANJACK DM RED
Produkt ist nicht verfügbar
PJL9401_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJL9402_R2_00001PanjitMOSFET /L9402/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS42/PJL9402-ASD1/SOP8-AS01
Produkt ist nicht verfügbar
PJL9404_R2_00001PanjitMOSFET /L9404/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS21/PJL9404-AS30/SOP8-AS01
Produkt ist nicht verfügbar
PJL9407_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2490 Stücke:
Lieferzeit 14-28 Tag (e)
49+1.06 EUR
60+ 0.87 EUR
100+ 0.59 EUR
1000+ 0.34 EUR
2500+ 0.29 EUR
10000+ 0.27 EUR
25000+ 0.24 EUR
Mindestbestellmenge: 49
PJL9407_R2_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 2.1W
Gate charge: 4.8nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 80mΩ
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
340+0.21 EUR
360+ 0.2 EUR
410+ 0.18 EUR
490+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 340
PJL9407_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2475 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
26+ 1.03 EUR
100+ 0.7 EUR
500+ 0.52 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 21
PJL9407_R2_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 2.1W
Gate charge: 4.8nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 80mΩ
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
340+0.21 EUR
360+ 0.2 EUR
410+ 0.18 EUR
490+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 340
PJL9407_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJL9408_R2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
auf Bestellung 2480 Stücke:
Lieferzeit 14-28 Tag (e)
40+1.33 EUR
48+ 1.09 EUR
100+ 0.74 EUR
500+ 0.56 EUR
Mindestbestellmenge: 40
PJL9410_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJL9410_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJL9411_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJL9411_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2463 Stücke:
Lieferzeit 14-28 Tag (e)
44+1.21 EUR
50+ 1.04 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.49 EUR
2500+ 0.41 EUR
10000+ 0.37 EUR
Mindestbestellmenge: 44
PJL9411_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2497 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.21 EUR
100+ 0.91 EUR
500+ 0.71 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 19
PJL9412_R2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJL9413_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-28 Tag (e)
32+1.66 EUR
37+ 1.43 EUR
100+ 1.07 EUR
500+ 0.84 EUR
Mindestbestellmenge: 32
PJL9414_R2_00001PanjitMOSFET /L9414/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS26/PJL9414-AS34/SOP8-AS01
Produkt ist nicht verfügbar
PJL9414_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJL9414_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2482 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.69 EUR
19+ 1.43 EUR
100+ 1.07 EUR
500+ 0.84 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 16
PJL9415_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3168 pF @ 15 V
auf Bestellung 2015 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
21+ 1.29 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 18
PJL9415_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3168 pF @ 15 V
Produkt ist nicht verfügbar
PJL9417_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
Produkt ist nicht verfügbar
PJL9417_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
Produkt ist nicht verfügbar
PJL9426_R2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJL9430A_R2_00001PanjitMOSFET /L9430A/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-60ICMN//PJ/SOP8-AS39/PJL9430A-ASI0/SOP8-AS01
Produkt ist nicht verfügbar
PJL9433A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
26+ 1.01 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 23
PJL9433A_R2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 3246 Stücke:
Lieferzeit 14-28 Tag (e)
44+1.21 EUR
50+ 1.04 EUR
100+ 0.76 EUR
500+ 0.6 EUR
1000+ 0.45 EUR
2500+ 0.38 EUR
10000+ 0.35 EUR
Mindestbestellmenge: 44
PJL9433A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.4 EUR
5000+ 0.38 EUR
Mindestbestellmenge: 2500
PJL9434A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
Produkt ist nicht verfügbar
PJL9434A_R2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJL9434A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
Produkt ist nicht verfügbar
PJL9436A1_R2_00001PanjitMOSFET /L9436A1/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-60ICMN//PJ/SOP8-AS32/PJL9436A1-AS87/SOP8-AS01
Produkt ist nicht verfügbar
PJL9436A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Produkt ist nicht verfügbar
PJL9436A_R2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2480 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.54 EUR
40+ 1.32 EUR
100+ 0.99 EUR
500+ 0.77 EUR
1000+ 0.62 EUR
2500+ 0.52 EUR
5000+ 0.51 EUR
Mindestbestellmenge: 34
PJL9436A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
auf Bestellung 2480 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.64 EUR
19+ 1.4 EUR
100+ 1.05 EUR
500+ 0.82 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 16
PJL9438A_R2_00001PanjitMOSFET /L9438A/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-60ICMN//PJ/SOP8-AS58/PJL9438A-ASF5/SOP8-AS01
Produkt ist nicht verfügbar
PJL9450A-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJL9452A-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJL9452A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Produkt ist nicht verfügbar
PJL9452A_R2_00001PanjitMOSFET 100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJL9454A-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJL9458AL-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJL9458AL_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Produkt ist nicht verfügbar
PJL9458AL_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Produkt ist nicht verfügbar
PJL9458AL_R2_00001PanjitMOSFET 100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJL9480_R2_00001Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Produkt ist nicht verfügbar
PJL9480_R2_00001PanjitMOSFET 150V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJL9480_R2_00001Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
auf Bestellung 2485 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
11+ 2.38 EUR
100+ 1.85 EUR
500+ 1.53 EUR
1000+ 1.21 EUR
Mindestbestellmenge: 10
PJL9602_R2_00001Panjit International Inc.Description: 30V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2363 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.69 EUR
18+ 1.48 EUR
100+ 1.13 EUR
500+ 0.9 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 16
PJL9602_R2_00001Panjit International Inc.Description: 30V COMPLEMENTARY ENHANCEMENT MO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
PJL9602_R2_00001PanjitMOSFET /L9602/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICNP//PJ/SOP8-AS82/PJL9602-ASW9/SOP8-AS01
Produkt ist nicht verfügbar
PJL9606_R2_00001Panjit International Inc.Description: 30V COMPLEMENTARY ENHANCEMENT MO
Produkt ist nicht verfügbar
PJL9606_R2_00001Panjit International Inc.Description: 30V COMPLEMENTARY ENHANCEMENT MO
Produkt ist nicht verfügbar
PJL9801_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.21 EUR
100+ 0.91 EUR
500+ 0.71 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 19
PJL9801_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2400 Stücke:
Lieferzeit 14-28 Tag (e)
44+1.21 EUR
51+ 1.02 EUR
100+ 0.76 EUR
500+ 0.6 EUR
1000+ 0.48 EUR
2500+ 0.4 EUR
10000+ 0.37 EUR
Mindestbestellmenge: 44
PJL9801_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJL9802_R2_00001PanjitMOSFET /L9802/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS49/PJL9802-ASD2/SOP8-AS01
Produkt ist nicht verfügbar
PJL9808_R2_00001PanjitMOSFET /L9808/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS25/PJL9808-AS33/SOP8-AS01
Produkt ist nicht verfügbar
PJL9809-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJL9809_R2_00001Panjit International Inc.Description: 30V DUAL P-CHANNEL ENHANCEMENT M
Produkt ist nicht verfügbar
PJL9809_R2_00001PanjitMOSFET 30V Dual P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJL9809_R2_00001Panjit International Inc.Description: 30V DUAL P-CHANNEL ENHANCEMENT M
Produkt ist nicht verfügbar
PJL9811_R2_00001Panjit International Inc.Description: MOSFET 2P-CH 30V 7.8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1169pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.56 EUR
Mindestbestellmenge: 2500
PJL9811_R2_00001PanjitMOSFET /L9811/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMP//PJ/SOP8-AS34/PJL9811-AS40/SOP8-AS01
Produkt ist nicht verfügbar
PJL9811_R2_00001Panjit International Inc.Description: MOSFET 2P-CH 30V 7.8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1169pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 6938 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.28 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 18
PJL9812_R2_00001PanjitMOSFET /L9812/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ//SOP8-AS18/SOP8-AS01
Produkt ist nicht verfügbar
PJL9812_R2_00001Panjit International Inc.Description: 30V DUAL N-CHANNEL ENHANCEMENT M
Produkt ist nicht verfügbar
PJL9812_R2_00001Panjit International Inc.Description: 30V DUAL N-CHANNEL ENHANCEMENT M
Produkt ist nicht verfügbar
PJL9812_R2_00201Panjit International Inc.Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4963 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 18
PJL9812_R2_00201Panjit International Inc.Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.48 EUR
Mindestbestellmenge: 2500
PJL9812_R2_00201PanjitMOSFET 30V Dual N-Channel Enhancement Mode MOSFET
auf Bestellung 2483 Stücke:
Lieferzeit 14-28 Tag (e)
36+1.47 EUR
42+ 1.25 EUR
100+ 0.94 EUR
500+ 0.74 EUR
1000+ 0.59 EUR
2500+ 0.5 EUR
10000+ 0.45 EUR
Mindestbestellmenge: 36
PJL9850_R2_00001PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2292 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
234+ 0.31 EUR
260+ 0.28 EUR
313+ 0.23 EUR
329+ 0.22 EUR
2500+ 0.21 EUR
Mindestbestellmenge: 74
PJL9850_R2_00001PanjitMOSFET 40V Dual N-Channel Enhancement Mode MOSFET
auf Bestellung 2088 Stücke:
Lieferzeit 14-28 Tag (e)
41+1.29 EUR
47+ 1.11 EUR
100+ 0.83 EUR
500+ 0.65 EUR
1000+ 0.5 EUR
2500+ 0.46 EUR
5000+ 0.43 EUR
Mindestbestellmenge: 41
PJL9850_R2_00001Panjit International Inc.Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3102 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.3 EUR
24+ 1.12 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 20
PJL9850_R2_00001PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2292 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
234+ 0.31 EUR
260+ 0.28 EUR
313+ 0.23 EUR
329+ 0.22 EUR
Mindestbestellmenge: 74
PJL9850_R2_00001Panjit International Inc.Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.46 EUR
Mindestbestellmenge: 2500
PJL9854_R2_00001Panjit International Inc.Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3649 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.74 EUR
17+ 1.54 EUR
100+ 1.18 EUR
500+ 0.93 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 15
PJL9854_R2_00001PanjitMOSFET 40V Dual N-Channel Enhancement Mode MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 559-573 Tag (e)
31+1.71 EUR
35+ 1.52 EUR
100+ 1.16 EUR
500+ 0.92 EUR
1000+ 0.74 EUR
2500+ 0.67 EUR
Mindestbestellmenge: 31
PJL9854_R2_00001Panjit International Inc.Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.68 EUR
Mindestbestellmenge: 2500
PJLC1V5
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJLC1V5D
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJLCDA05
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJLCDA12
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJLCVU2.8
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJLKIT316Hammond ManufacturingElectrical Enclosure Accessories Latch Kit/Snap Latch For PJ Series/Pack2
Produkt ist nicht verfügbar