Produkte > WMQ
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WMQ | Bussmann / Eaton | Specialty Fuses BUSS HEAT LIMITER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMQ-882 | NS | 1992 | auf Bestellung 466 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMQ020N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ023N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 248A Power dissipation: 46.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ032N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 360A; 44W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 360A Power dissipation: 44W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ080N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ12P10TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ20DN06TS | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ20N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ24P04TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -24A Pulsed drain current: -96A Power dissipation: 27W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ25P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Pulsed drain current: -100A Power dissipation: 22W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ25P04T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -25A Pulsed drain current: -100A Power dissipation: 31.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ25P06TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ26P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ28N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 54A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 466 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ30P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -120A Power dissipation: 29.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ42P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -42A Pulsed drain current: -168A Power dissipation: 37W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| WMQ80N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
|