Produkte > WMQ
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
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| WMQ | Bussmann / Eaton | Specialty Fuses BUSS HEAT LIMITER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMQ-882 | NS | 1992 | auf Bestellung 466 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMQ020N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ040N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Pulsed drain current: 170A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ050N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 200A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 352 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ060N08LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 58A; Idm: 232A; 43W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 58A Pulsed drain current: 232A Power dissipation: 43W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ080N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ090N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 25.3A; Idm: 160A; 27.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: 25.3A Power dissipation: 27.7W Pulsed drain current: 160A Gate charge: 5.6nC | auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ119N10LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 151A; 42W Case: PDFN3030-8 Mounting: SMD Polarisation: unipolar Gate charge: 20nC On-state resistance: 13mΩ Kind of channel: enhancement Power dissipation: 42W Drain current: 42A Gate-source voltage: ±20V Pulsed drain current: 151A Drain-source voltage: 100V Kind of package: reel; tape Type of transistor: N-MOSFET | auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ140DNV6LG4 | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 30A; Idm: 120A; 23.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 120A Power dissipation: 23.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 1190 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ18P04TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -18A; Idm: -72A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -18A Pulsed drain current: -72A Power dissipation: 22W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ26P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ28N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 54A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ30N02T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 75A Pulsed drain current: 300A Power dissipation: 37.8W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 4mΩ Mounting: SMD Gate charge: 43.8nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ30N03T2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 100A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 386 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ30N04TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 120A Power dissipation: 18.9W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 499 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ30N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 34.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ30P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -120A Power dissipation: 29.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ30P04T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Pulsed drain current: -120A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ35P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -140A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 13mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ40DN03T1 | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 28.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMQ40N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ80N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 2930 Stücke: Lieferzeit 14-21 Tag (e) |
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