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WMQBussmann / EatonSpecialty Fuses BUSS HEAT LIMITER
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WMQ-882NS1992
auf Bestellung 466 Stücke:
Lieferzeit 21-28 Tag (e)
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WMQ020N03LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
90+0.8 EUR
Mindestbestellmenge: 65
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WMQ023N03LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 75 Stücke:
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75+0.96 EUR
Mindestbestellmenge: 75
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WMQ032N04LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 360A; 44W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 360A
Power dissipation: 44W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 37 Stücke:
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37+1.93 EUR
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WMQ040N03LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 323 Stücke:
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122+0.59 EUR
213+0.34 EUR
258+0.28 EUR
323+0.21 EUR
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WMQ048NV6HG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 68A; Idm: 272A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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74+0.97 EUR
100+0.72 EUR
Mindestbestellmenge: 74
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WMQ048NV6LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 72A; Idm: 288A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
100+0.72 EUR
Mindestbestellmenge: 74
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WMQ050N03LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
266+0.27 EUR
319+0.22 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 129
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WMQ050N04LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Pulsed drain current: 182A
Power dissipation: 33.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 108 Stücke:
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87+0.83 EUR
108+0.66 EUR
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WMQ060N04LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
205+0.35 EUR
227+0.32 EUR
291+0.25 EUR
307+0.23 EUR
Mindestbestellmenge: 122
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WMQ060N08LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 58A; Idm: 232A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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63+1.14 EUR
88+0.82 EUR
93+0.77 EUR
100+0.72 EUR
Mindestbestellmenge: 63
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WMQ080N03LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
261+0.27 EUR
313+0.23 EUR
417+0.17 EUR
443+0.16 EUR
Mindestbestellmenge: 107
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WMQ090N04LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 25.3A; Idm: 160A; 27.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 5.6nC
Drain current: 25.3A
Power dissipation: 27.7W
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
236+0.3 EUR
283+0.25 EUR
379+0.19 EUR
400+0.18 EUR
Mindestbestellmenge: 95
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WMQ10N10TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
249+0.29 EUR
298+0.24 EUR
397+0.18 EUR
421+0.17 EUR
Mindestbestellmenge: 100
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WMQ12P10TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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88+0.82 EUR
146+0.49 EUR
163+0.44 EUR
208+0.34 EUR
220+0.33 EUR
Mindestbestellmenge: 88
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WMQ140NV6LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 33A; Idm: 132A; 25.5W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 33A
Gate charge: 14nC
On-state resistance: 14mΩ
Power dissipation: 25.5W
Gate-source voltage: ±20V
Pulsed drain current: 132A
Case: PDFN3030-8
Kind of channel: enhancement
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
231+0.31 EUR
280+0.26 EUR
374+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 103
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WMQ15DN04TSWAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 15A; Idm: 60A; 11.36W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 11.36W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
260+0.28 EUR
311+0.23 EUR
421+0.17 EUR
443+0.16 EUR
Mindestbestellmenge: 107
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WMQ175N10HG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
146+0.49 EUR
162+0.44 EUR
205+0.35 EUR
216+0.33 EUR
Mindestbestellmenge: 88
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WMQ175N10LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
211+0.34 EUR
236+0.3 EUR
302+0.24 EUR
319+0.22 EUR
Mindestbestellmenge: 125
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WMQ20DN06TSWAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
207+0.35 EUR
252+0.28 EUR
323+0.22 EUR
341+0.21 EUR
Mindestbestellmenge: 120
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WMQ20N06TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 148 Stücke:
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120+0.6 EUR
148+0.49 EUR
Mindestbestellmenge: 120
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WMQ24P04TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -24A
Pulsed drain current: -96A
Power dissipation: 27W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
275+0.26 EUR
329+0.22 EUR
345+0.21 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 109
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WMQ25P03T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 275 Stücke:
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117+0.61 EUR
275+0.26 EUR
Mindestbestellmenge: 117
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WMQ25P04T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 31.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
219+0.33 EUR
265+0.27 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 125
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WMQ25P06TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
146+0.49 EUR
163+0.44 EUR
208+0.34 EUR
220+0.33 EUR
Mindestbestellmenge: 88
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WMQ26P02TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
345+0.21 EUR
414+0.17 EUR
439+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 139
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WMQ28N03T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 54A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
332+0.22 EUR
414+0.17 EUR
439+0.16 EUR
490+0.14 EUR
Mindestbestellmenge: 120
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WMQ30DN04TSWAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 18.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
188+0.38 EUR
230+0.31 EUR
291+0.25 EUR
309+0.23 EUR
Mindestbestellmenge: 97
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WMQ30DP03TSWAYONCategory: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -30A; Idm: -120A; 29W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
203+0.35 EUR
247+0.29 EUR
313+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 117
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WMQ30N02T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
280+0.26 EUR
338+0.21 EUR
358+0.2 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WMQ30N03T2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
231+0.31 EUR
278+0.26 EUR
374+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 103
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WMQ30N04TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 18.9W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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114+0.63 EUR
286+0.25 EUR
341+0.21 EUR
365+0.2 EUR
459+0.16 EUR
486+0.15 EUR
Mindestbestellmenge: 114
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WMQ30N06TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 340 Stücke:
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125+0.57 EUR
281+0.25 EUR
338+0.21 EUR
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WMQ30P03T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
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109+0.66 EUR
274+0.26 EUR
327+0.22 EUR
343+0.21 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 109
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WMQ30P04T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 350 Stücke:
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122+0.59 EUR
211+0.34 EUR
258+0.28 EUR
327+0.22 EUR
345+0.21 EUR
Mindestbestellmenge: 122
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WMQ35P02TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
353+0.2 EUR
417+0.17 EUR
443+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 139
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WMQ40N03T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 160 Stücke:
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122+0.59 EUR
160+0.44 EUR
Mindestbestellmenge: 122
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WMQ42P03T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 37W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 475 Stücke:
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129+0.56 EUR
266+0.27 EUR
319+0.22 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 129
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WMQ46N03T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 415 Stücke:
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122+0.59 EUR
307+0.23 EUR
365+0.2 EUR
391+0.18 EUR
415+0.17 EUR
Mindestbestellmenge: 122
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WMQ50N04T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 395 Stücke:
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100+0.72 EUR
209+0.34 EUR
248+0.29 EUR
332+0.22 EUR
353+0.2 EUR
Mindestbestellmenge: 100
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WMQ50P03T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 69W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 69W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2876 Stücke:
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209+0.34 EUR
240+0.3 EUR
286+0.25 EUR
304+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 209
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WMQ55N04T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
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132+0.54 EUR
229+0.31 EUR
278+0.26 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 132
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WMQ80N03T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2965 Stücke:
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132+0.54 EUR
229+0.31 EUR
278+0.26 EUR
296+0.24 EUR
313+0.23 EUR
500+0.22 EUR
Mindestbestellmenge: 132
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