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WMQBussmann / EatonSpecialty Fuses BUSS HEAT LIMITER
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WMQ-882NS1992
auf Bestellung 466 Stücke:
Lieferzeit 21-28 Tag (e)
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WMQ020N03LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
90+0.8 EUR
Mindestbestellmenge: 69
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WMQ040N03LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
228+0.31 EUR
277+0.26 EUR
332+0.22 EUR
335+0.21 EUR
Mindestbestellmenge: 132
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WMQ050N03LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
278+0.26 EUR
334+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 136
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WMQ050N04LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Pulsed drain current: 182A
Power dissipation: 33.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 180 Stücke:
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93+0.77 EUR
154+0.46 EUR
172+0.42 EUR
180+0.4 EUR
Mindestbestellmenge: 93
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WMQ060N04LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
224+0.32 EUR
248+0.29 EUR
293+0.24 EUR
311+0.23 EUR
Mindestbestellmenge: 136
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WMQ10N10TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
265+0.27 EUR
317+0.23 EUR
397+0.18 EUR
421+0.17 EUR
Mindestbestellmenge: 107
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WMQ140DNV6LG4WAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 30A; Idm: 120A; 23.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 23.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
223+0.32 EUR
247+0.29 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 136
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WMQ140NV6LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 33A; Idm: 132A; 25.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 33A
Pulsed drain current: 132A
Power dissipation: 25.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
248+0.29 EUR
296+0.24 EUR
371+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMQ175N10HG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
154+0.47 EUR
171+0.42 EUR
204+0.35 EUR
216+0.33 EUR
Mindestbestellmenge: 91
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WMQ20N06TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
150+0.47 EUR
Mindestbestellmenge: 125
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WMQ26P02TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
360+0.2 EUR
432+0.17 EUR
459+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 148
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WMQ30N02T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
300+0.24 EUR
360+0.2 EUR
379+0.19 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 132
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WMQ30N06TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
298+0.24 EUR
358+0.2 EUR
Mindestbestellmenge: 132
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WMQ30P03T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
291+0.25 EUR
348+0.21 EUR
368+0.19 EUR
435+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 117
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WMQ35P02TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
368+0.19 EUR
443+0.16 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 148
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WMQ40N03T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
160+0.44 EUR
Mindestbestellmenge: 132
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WMQ46N03T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
307+0.23 EUR
365+0.2 EUR
391+0.18 EUR
415+0.17 EUR
Mindestbestellmenge: 122
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WMQ50N04T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
220+0.33 EUR
261+0.27 EUR
334+0.21 EUR
353+0.2 EUR
Mindestbestellmenge: 107
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WMQ50P03T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 69W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 69W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
237+0.3 EUR
286+0.25 EUR
304+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 209
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WMQ55N04T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
229+0.31 EUR
277+0.26 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 132
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WMQ80N03T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
224+0.32 EUR
271+0.26 EUR
298+0.24 EUR
307+0.23 EUR
500+0.22 EUR
Mindestbestellmenge: 129
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