Produkte > WMQ
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| WMQ | Bussmann / Eaton | Specialty Fuses BUSS HEAT LIMITER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WMQ-882 | NS | 1992 | auf Bestellung 466 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WMQ020N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ020N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ023N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 248A Power dissipation: 46.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ023N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 248A Power dissipation: 46.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ032N04LG2 | WAYON | WMQ032N04LG2-CYG SMD N channel transistors | auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ040N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Pulsed drain current: 170A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ040N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Pulsed drain current: 170A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 323 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ048NV6HG4 | WAYON | WMQ048NV6HG4-CYG SMD N channel transistors | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ048NV6LG4 | WAYON | WMQ048NV6LG4-CYG SMD N channel transistors | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ050N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 200A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ050N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 200A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ050N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 36A Pulsed drain current: 182A Power dissipation: 33.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 108 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ050N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 36A Pulsed drain current: 182A Power dissipation: 33.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ060N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 200A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ060N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 200A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ060N08LG2 | WAYON | WMQ060N08LG2-CYG SMD N channel transistors | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ080N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ080N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ090N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 25.3A; Idm: 160A; 27.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 160A Gate charge: 5.6nC Drain current: 25.3A Power dissipation: 27.7W | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ090N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 25.3A; Idm: 160A; 27.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 160A Gate charge: 5.6nC Drain current: 25.3A Power dissipation: 27.7W Anzahl je Verpackung: 1 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ090NV6LG4 | WAYON | WMQ090NV6LG4-CYG SMD N channel transistors | auf Bestellung 438 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ098N03LG2 | WAYON | WMQ098N03LG2-CYG SMD N channel transistors | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ099N10LG2 | WAYON | WMQ099N10LG2-CYG SMD N channel transistors | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ10N10TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 40A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ10N10TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 40A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ119N10LG2 | WAYON | WMQ119N10LG2-CYG SMD N channel transistors | auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ12P10TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ12P10TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ140NV6LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 33A; Idm: 132A; 25.5W Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 65V Drain current: 33A Gate charge: 14nC On-state resistance: 14mΩ Power dissipation: 25.5W Gate-source voltage: ±20V Pulsed drain current: 132A Case: PDFN3030-8 Kind of channel: enhancement | auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ140NV6LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 33A; Idm: 132A; 25.5W Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 65V Drain current: 33A Gate charge: 14nC On-state resistance: 14mΩ Power dissipation: 25.5W Gate-source voltage: ±20V Pulsed drain current: 132A Case: PDFN3030-8 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ15DN04TS | WAYON | WMQ15DN04TS-CYG Multi channel transistors | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ175N10HG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 168A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ175N10HG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 168A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 495 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ175N10LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 172A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ175N10LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 172A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 501 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ18P04TS | WAYON | WMQ18P04TS-CYG SMD P channel transistors | auf Bestellung 497 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ20DN06TS | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ20DN06TS | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ20N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ20N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ24P04TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -24A Pulsed drain current: -96A Power dissipation: 27W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ24P04TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -24A Pulsed drain current: -96A Power dissipation: 27W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ25P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Pulsed drain current: -100A Power dissipation: 22W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 275 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ25P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Pulsed drain current: -100A Power dissipation: 22W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ25P04T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -25A Pulsed drain current: -100A Power dissipation: 31.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ25P04T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -25A Pulsed drain current: -100A Power dissipation: 31.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 488 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ25P06TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 262 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ25P06TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ26P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ26P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ28N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 54A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ28N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 54A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30DN04TS | WAYON | WMQ30DN04TS-CYG Multi channel transistors | auf Bestellung 489 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30DP03TS | WAYON | WMQ30DP03TS-CYG Multi channel transistors | auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30N02T1 | WAYON | WMQ30N02T1-CYG SMD N channel transistors | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30N03T2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 100A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 460 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30N03T2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 100A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 460 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ30N04TS | WAYON | WMQ30N04TS-CYG SMD N channel transistors | auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 34.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 305 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ30N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 34.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 305 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30P03T1 | WAYON | WMQ30P03T1-CYG SMD P channel transistors | auf Bestellung 485 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30P04T1 | WAYON | WMQ30P04T1-CYG SMD P channel transistors | auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ35P02TS | WAYON | WMQ35P02TS-CYG SMD P channel transistors | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ37N03T1 | WAYON | WMQ37N03T1-CYG SMD N channel transistors | auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ40DN03T1 | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 28.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WMQ40N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 160 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ40N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ42P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -42A Pulsed drain current: -168A Power dissipation: 37W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ42P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -42A Pulsed drain current: -168A Power dissipation: 37W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ46N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 184A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 411 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ46N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 184A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ50N04T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 200A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 395 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ50N04T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 200A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ50P03T1 | WAYON | WMQ50P03T1-CYG SMD P channel transistors | auf Bestellung 2826 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ50P04TS | WAYON | WMQ50P04TS-CYG SMD P channel transistors | auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ55N04T1 | WAYON | WMQ55N04T1-CYG SMD N channel transistors | auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ60P02TS | WAYON | WMQ60P02TS-CYG SMD P channel transistors | auf Bestellung 281 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ80N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ80N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 2965 Stücke: Lieferzeit 7-14 Tag (e) |
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