Produkte > NEC CORPORATION > Alle Produkte des Herstellers NEC CORPORATION (44) > Seite 1 nach 1
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SA954-A | NEC Corporation |
Description: TRANS PNP 80V 0.3A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 600 mW |
auf Bestellung 109932 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC1841-A | NEC Corporation |
Description: 0.05A, 120V, NPN, TO-92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: TO-92 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
auf Bestellung 73522 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3731-T-A | NEC Corporation |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Part Status: Active |
auf Bestellung 42500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC945A-T-A | NEC Corporation |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Part Status: Active |
auf Bestellung 945905 Stücke: Lieferzeit 10-14 Tag (e) |
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2SJ606-ZK-E1-AY | NEC Corporation |
Description: P-CHANNEL SWITCHING POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 83A Rds On (Max) @ Id, Vgs: 15mOhm @ 42A, 10V Power Dissipation (Max): 120W Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK1482-T-AZ | NEC Corporation |
Description: SMALL SIGNAL FET Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V Power Dissipation (Max): 750W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
auf Bestellung 2162 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3058-Z-E1-AZ | NEC Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V Power Dissipation (Max): 1.5W Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-263, TO-220SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3634-Z-AZ | NEC Corporation |
Description: 6A, 200V, N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
auf Bestellung 8639 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK4028-T1-A | NEC Corporation |
Description: N-CHANNEL SMALL SIGNAL MOSFET Packaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 2V Current Drain (Id) - Max: 10 mA Supplier Device Package: 3pXSOF03 Part Status: Active Drain to Source Voltage (Vdss): 20 V Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 90 µA @ 2 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
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2SK4070-ZK-E2-AY | NEC Corporation |
Description: N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK4076-ZK-E1-AY | NEC Corporation |
Description: N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 17.5A, 10V Power Dissipation (Max): 1W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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AN1L3N | NEC Corporation |
Description: TRANS PREBIAS PNP 50V 0.1A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 56894 Stücke: Lieferzeit 10-14 Tag (e) |
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FS70UMJ-06F | NEC Corporation |
Description: 70A, 60V, N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 36A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 10 V |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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HRC0103ATRF-E | NEC Corporation |
Description: SCHOTTKY DIODE Packaging: Bulk Part Status: Obsolete |
auf Bestellung 76142 Stücke: Lieferzeit 10-14 Tag (e) |
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HZM6.2NB2TR-E | NEC Corporation |
Description: ZENER DIODE, 6.2V, 0.2W Packaging: Bulk |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP32N055HLE-AZ | NEC Corporation |
Description: 32A, 55V, 0.033OHM, N-CHANNEL , Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Power Dissipation (Max): 1.2W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (MP-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP32N055SHE-E1-AZ | NEC Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N03MDE-S18-AY | NEC Corporation |
Description: 80A, 30V, 0.011OHM, N-CHANNEL , Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: MP-25K Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N04NDG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 80A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N04NLG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 80A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N055MDG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 55V 80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
auf Bestellung 6350 Stücke: Lieferzeit 10-14 Tag (e) |
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NP82N04NDG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 82A 3LDPAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 3-LDPAK Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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NP82N04NLG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 82A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 25 V |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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NP82N055MUG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 55V 82A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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NP82N06NLG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 60V 82A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V |
auf Bestellung 4600 Stücke: Lieferzeit 10-14 Tag (e) |
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RD10E-NEC | NEC Corporation | Description: DIODE ZENER 9.8V 0.4W 6.5% |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RD12ES(2)-T1-AZ | NEC Corporation | Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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RD12JS-T1-AZ | NEC Corporation |
Description: DIODE ZENER Packaging: Bulk |
auf Bestellung 184500 Stücke: Lieferzeit 10-14 Tag (e) |
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RD16ES-T1 | NEC Corporation |
Description: DIODE ZENER Packaging: Bulk Part Status: Active |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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RD16JS | NEC Corporation |
Description: DIODE ZENER 16V Packaging: Bulk Part Status: Active |
auf Bestellung 30810 Stücke: Lieferzeit 10-14 Tag (e) |
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RD18ES-T1-AZ | NEC Corporation |
Description: DIODE ZENER Packaging: Bulk |
auf Bestellung 816000 Stücke: Lieferzeit 10-14 Tag (e) |
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RD2.4E-T1-AZ | NEC Corporation | Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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RD2.7ES | NEC Corporation | Description: DIODE ZENER 2.7V |
Produkt ist nicht verfügbar |
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RD3.0ES | NEC Corporation | Description: DIODE ZENER 3V |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3.0F-AZ | NEC Corporation | Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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RD39E | NEC Corporation |
Description: RD39 - 500MW ZENER DIODE, DO-35 Packaging: Bulk |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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RD4.3F | NEC Corporation |
Description: ZENER DIODE, 4.3V, 1W Packaging: Bulk Part Status: Active |
auf Bestellung 7600 Stücke: Lieferzeit 10-14 Tag (e) |
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RD5.6E-T1-AZ | NEC Corporation | Description: DIODE ZENER |
auf Bestellung 1823997 Stücke: Lieferzeit 10-14 Tag (e) |
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RD6.2E | NEC Corporation | Description: DIODE ZENER |
auf Bestellung 90756 Stücke: Lieferzeit 10-14 Tag (e) |
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RD7.5E-T1-AZ | NEC Corporation | Description: DIODE ZENER |
auf Bestellung 2722000 Stücke: Lieferzeit 10-14 Tag (e) |
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UPC1093J-T-A | NEC Corporation |
Description: IC REG LINEAR ADJ SHUNT REG Packaging: Bulk Part Status: Active |
auf Bestellung 91005 Stücke: Lieferzeit 10-14 Tag (e) |
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UPC2905BHB-AY | NEC Corporation |
Description: FIXED POSITIVE LDO REGULATOR Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 4 mA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: MP-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 57dB (120Hz) Voltage Dropout (Max): 0.7V @ 1A Protection Features: Over Current, Over Temperature |
auf Bestellung 1728 Stücke: Lieferzeit 10-14 Tag (e) |
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UPC2906HF-AZ | NEC Corporation |
Description: FIXED POSITIVE LDO REGULATOR Packaging: Bulk Package / Case: TO-220-3 Full Pack, Isolated Tab Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 4 mA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: MP-45G Voltage - Output (Min/Fixed): 6V Part Status: Active PSRR: 60dB (120Hz) Voltage Dropout (Max): 1V @ 1A Protection Features: Over Current, Over Temperature Current - Supply (Max): 60 mA |
auf Bestellung 1536 Stücke: Lieferzeit 10-14 Tag (e) |
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UPD5742T6J-E4-A | NEC Corporation |
Description: IC OPAMP GP 1 CIRCUIT 3MINIMOLD Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Supplier Device Package: 3-MINIMOLD |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA954-A |
Hersteller: NEC Corporation
Description: TRANS PNP 80V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
Description: TRANS PNP 80V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
auf Bestellung 109932 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1159+ | 0.42 EUR |
2SC1841-A |
Hersteller: NEC Corporation
Description: 0.05A, 120V, NPN, TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: 0.05A, 120V, NPN, TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 73522 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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2319+ | 0.21 EUR |
2SC3731-T-A |
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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3206+ | 0.16 EUR |
2SC945A-T-A |
auf Bestellung 945905 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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260+ | 1.9 EUR |
2SJ606-ZK-E1-AY |
Hersteller: NEC Corporation
Description: P-CHANNEL SWITCHING POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 83A
Rds On (Max) @ Id, Vgs: 15mOhm @ 42A, 10V
Power Dissipation (Max): 120W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Description: P-CHANNEL SWITCHING POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 83A
Rds On (Max) @ Id, Vgs: 15mOhm @ 42A, 10V
Power Dissipation (Max): 120W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
98+ | 4.99 EUR |
2SK1482-T-AZ |
Hersteller: NEC Corporation
Description: SMALL SIGNAL FET
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 750W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: SMALL SIGNAL FET
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 750W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 2162 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
738+ | 0.66 EUR |
2SK3058-Z-E1-AZ |
Hersteller: NEC Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-263, TO-220SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-263, TO-220SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
156+ | 3.16 EUR |
2SK3634-Z-AZ |
Hersteller: NEC Corporation
Description: 6A, 200V, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: 6A, 200V, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 8639 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
332+ | 1.5 EUR |
2SK4028-T1-A |
Hersteller: NEC Corporation
Description: N-CHANNEL SMALL SIGNAL MOSFET
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 2V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: 3pXSOF03
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 90 µA @ 2 V
Power - Max: 100 W
Description: N-CHANNEL SMALL SIGNAL MOSFET
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 2V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: 3pXSOF03
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 90 µA @ 2 V
Power - Max: 100 W
Produkt ist nicht verfügbar
2SK4070-ZK-E2-AY |
Hersteller: NEC Corporation
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
541+ | 0.97 EUR |
2SK4076-ZK-E1-AY |
Hersteller: NEC Corporation
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
492+ | 1.07 EUR |
AN1L3N |
Hersteller: NEC Corporation
Description: TRANS PREBIAS PNP 50V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 56894 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1159+ | 0.43 EUR |
FS70UMJ-06F |
Hersteller: NEC Corporation
Description: 70A, 60V, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 10 V
Description: 70A, 60V, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 10 V
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
91+ | 5.49 EUR |
HRC0103ATRF-E |
auf Bestellung 76142 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2704+ | 0.18 EUR |
HZM6.2NB2TR-E |
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1623+ | 0.29 EUR |
NP32N055HLE-AZ |
Hersteller: NEC Corporation
Description: 32A, 55V, 0.033OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (MP-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: 32A, 55V, 0.033OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (MP-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
339+ | 1.45 EUR |
NP32N055SHE-E1-AZ |
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
339+ | 1.45 EUR |
NP80N03MDE-S18-AY |
Hersteller: NEC Corporation
Description: 80A, 30V, 0.011OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MP-25K
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Description: 80A, 30V, 0.011OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MP-25K
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
151+ | 3.3 EUR |
NP80N04NDG-S18-AY |
Hersteller: NEC Corporation
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
151+ | 3.3 EUR |
NP80N04NLG-S18-AY |
Hersteller: NEC Corporation
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
151+ | 3.3 EUR |
NP80N055MDG-S18-AY |
Hersteller: NEC Corporation
Description: MOSFET N-CH 55V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 55V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 6350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
161+ | 3.08 EUR |
NP82N04NDG-S18-AY |
Hersteller: NEC Corporation
Description: MOSFET N-CH 40V 82A 3LDPAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-LDPAK
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 40V 82A 3LDPAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-LDPAK
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
128+ | 4.14 EUR |
NP82N04NLG-S18-AY |
Hersteller: NEC Corporation
Description: MOSFET N-CH 40V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 25 V
Description: MOSFET N-CH 40V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 25 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
128+ | 4.14 EUR |
NP82N055MUG-S18-AY |
Hersteller: NEC Corporation
Description: MOSFET N-CH 55V 82A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Description: MOSFET N-CH 55V 82A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
141+ | 3.44 EUR |
NP82N06NLG-S18-AY |
Hersteller: NEC Corporation
Description: MOSFET N-CH 60V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Description: MOSFET N-CH 60V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
auf Bestellung 4600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
135+ | 3.69 EUR |
RD10E-NEC |
Hersteller: NEC Corporation
Description: DIODE ZENER 9.8V 0.4W 6.5%
Description: DIODE ZENER 9.8V 0.4W 6.5%
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
RD12JS-T1-AZ |
auf Bestellung 184500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5413+ | 0.099 EUR |
RD16ES-T1 |
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8103+ | 0.065 EUR |
RD16JS |
auf Bestellung 30810 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5413+ | 0.098 EUR |
RD18ES-T1-AZ |
auf Bestellung 816000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5413+ | 0.097 EUR |
RD3.0ES |
Hersteller: NEC Corporation
Description: DIODE ZENER 3V
Description: DIODE ZENER 3V
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2197+ | 0.23 EUR |
RD39E |
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2029+ | 0.24 EUR |
RD4.3F |
auf Bestellung 7600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1353+ | 0.36 EUR |
RD5.6E-T1-AZ |
Hersteller: NEC Corporation
Description: DIODE ZENER
Description: DIODE ZENER
auf Bestellung 1823997 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5864+ | 0.082 EUR |
RD6.2E |
Hersteller: NEC Corporation
Description: DIODE ZENER
Description: DIODE ZENER
auf Bestellung 90756 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5864+ | 0.082 EUR |
RD7.5E-T1-AZ |
Hersteller: NEC Corporation
Description: DIODE ZENER
Description: DIODE ZENER
auf Bestellung 2722000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2197+ | 0.23 EUR |
UPC1093J-T-A |
Hersteller: NEC Corporation
Description: IC REG LINEAR ADJ SHUNT REG
Packaging: Bulk
Part Status: Active
Description: IC REG LINEAR ADJ SHUNT REG
Packaging: Bulk
Part Status: Active
auf Bestellung 91005 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
650+ | 0.75 EUR |
UPC2905BHB-AY |
Hersteller: NEC Corporation
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: MP-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 0.7V @ 1A
Protection Features: Over Current, Over Temperature
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: MP-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 0.7V @ 1A
Protection Features: Over Current, Over Temperature
auf Bestellung 1728 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
176+ | 3.01 EUR |
UPC2906HF-AZ |
Hersteller: NEC Corporation
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: MP-45G
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1V @ 1A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 60 mA
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: MP-45G
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1V @ 1A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 60 mA
auf Bestellung 1536 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
204+ | 2.47 EUR |
UPD5742T6J-E4-A |
Hersteller: NEC Corporation
Description: IC OPAMP GP 1 CIRCUIT 3MINIMOLD
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: 3-MINIMOLD
Description: IC OPAMP GP 1 CIRCUIT 3MINIMOLD
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: 3-MINIMOLD
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
773+ | 0.63 EUR |