Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (31354) > Seite 198 nach 523

Wählen Sie Seite:   [  << Vorherige Seite ]  1 52 104 156 193 194 195 196 197 198 199 200 201 202 203 208 260 312 364 416 468 520 523  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NZX15X,133 NZX15X,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 14.72V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14.72 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NZX15A,133 NZX15A,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 14.4V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14.4 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 7676 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
107+0.17 EUR
172+0.1 EUR
500+0.075 EUR
1000+0.065 EUR
2000+0.058 EUR
5000+0.049 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
NZX15B,133 NZX15B,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 14.8V 500MW ALF2
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 14.8 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.044 EUR
20000+0.04 EUR
30000+0.038 EUR
50000+0.035 EUR
70000+0.034 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
NZX15B,133 NZX15B,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 14.8V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 14.8 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 9988 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
106+0.17 EUR
171+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
2000+0.058 EUR
5000+0.05 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
NZX15C,133 NZX15C,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 15.2V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
103+0.17 EUR
166+0.11 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
74HC03DB118 74HC03DB118 Nexperia USA Inc. 74HC_HCT03.pdf Description: IC GATE NAND 4CH 2-INP 14SSOP
Features: Open Drain
Packaging: Bulk
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1762+0.27 EUR
Mindestbestellmenge: 1762
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R1-40E,118 BUK768R1-40E,118 Nexperia USA Inc. BUK768R1-40E.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1832 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.33 EUR
10+2.78 EUR
50+2.11 EUR
100+1.89 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BUK7210-55B,118 BUK7210-55B,118 Nexperia USA Inc. BUK7210-55B.pdf Description: MOSFET N-CH 55V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7210-55B,118 BUK7210-55B,118 Nexperia USA Inc. BUK7210-55B.pdf Description: MOSFET N-CH 55V 75A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-C12,118 BZT52-C12,118 Nexperia USA Inc. NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER
Tolerance: ±5.42%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-C12,115 BZT52-C12,115 Nexperia USA Inc. NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12V 350MW SOD123
Tolerance: ±5.42%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZV85-C39,133 BZV85-C39,133 Nexperia USA Inc. PHGLS22780-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 39V 1.3W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
auf Bestellung 76020 Stücke:
Lieferzeit 10-14 Tag (e)
2844+0.16 EUR
Mindestbestellmenge: 2844
Im Einkaufswagen  Stück im Wert von  UAH
NHUMD12F NHUMD12F Nexperia USA Inc. NHUMD3_2_12_SER.pdf Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
32+0.56 EUR
100+0.3 EUR
500+0.2 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
PESD5V0F1BLD315 Nexperia USA Inc. PESD5V0F1BLD.pdf Description: NOW NEXPERIA PESD5V0F1BLD TRANS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PESD5V0F1BSH315 PESD5V0F1BSH315 Nexperia USA Inc. PESD5V0F1BSH.pdf Description: TVS DIODE 5VWM 6VC DSN04022
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 6V
Voltage - Breakdown (Min): 7.2V
Bidirectional Channels: 1
Supplier Device Package: DSN0402-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: Telecom
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
1142+0.39 EUR
Mindestbestellmenge: 1142
Im Einkaufswagen  Stück im Wert von  UAH
PESD5V0F1BSHYL PESD5V0F1BSHYL Nexperia USA Inc. PESD5V0F1BSH.pdf Description: TVS DIODE 5V 6V DSN0402-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LSF0101GMX LSF0101GMX Nexperia USA Inc. LSF0101.pdf Description: IC XLTR VL BIDIR 6-XSON/SOT886
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.95 V ~ 5 V
Voltage - VCCB: 0.95 V ~ 5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 4777 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
38+0.46 EUR
50+0.38 EUR
100+0.36 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
74AHC1G4210GW-Q100125 74AHC1G4210GW-Q100125 Nexperia USA Inc. 74AHC1G4210_Q100.pdf Description: NOW NEXPERIA 74AHC1G4210GW-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHC1G4214GW,125 74AHC1G4214GW,125 Nexperia USA Inc. 74AHC1G4214.pdf Description: 12-STAGE DIVIDER AND OSCILLATOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHC1G4214GW-Q100125 74AHC1G4214GW-Q100125 Nexperia USA Inc. 74AHC1G4214_Q100.pdf Description: NOW NEXPERIA 74AHC1G4214GW-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-30YL,115 PSMN7R0-30YL,115 Nexperia USA Inc. PSMN7R0-30YL.pdf Description: MOSFET N-CH 30V 76A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 12 V
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-30YLC,115 PSMN7R0-30YLC,115 Nexperia USA Inc. PSMN7R0-30YLC.pdf Description: MOSFET N-CH 30V 61A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
auf Bestellung 1153 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-C15,115 BZT52-C15,115 Nexperia USA Inc. BZT52_SER.pdf Description: ZENER DIODE, 15V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-C15,118 BZT52-C15,118 Nexperia USA Inc. NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw Description: ZENER DIODE, 15V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC846B/DG/B4R BC846B/DG/B4R Nexperia USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC846B/DG/B4VL BC846B/DG/B4VL Nexperia USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC846B/DG/B3,215 BC846B/DG/B3,215 Nexperia USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-B15X Nexperia USA Inc. Description: DIODE ZENER 15V 590MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-B39X BZT52-B39X Nexperia USA Inc. BZT52-B_SER.pdf Description: DIODE ZENER 39V 590MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 590 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 75 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2.05%
Packaging: Cut Tape (CT)
auf Bestellung 6375 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
110+0.16 EUR
243+0.073 EUR
500+0.072 EUR
1000+0.071 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
NHUMB9F NHUMB9F Nexperia USA Inc. NHUMB10_13_9_SER.pdf Description: TRANS PREBIAS 2PNP 80V 6-TSSOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDZ10BGW,115 PDZ10BGW,115 Nexperia USA Inc. PDZ-GW_SER.pdf Description: NOW NEXPERIA PDZ10BGW - ZENER DI
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
15000+0.034 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
PDZ10BGW115 PDZ10BGW115 Nexperia USA Inc. NEXP-S-A0003514607-1.pdf?t.download=true&u=5oefqw Description: NOW NEXPERIA PDZ10BGW - ZENER DI
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
15000+0.034 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
PUMF11,115 PUMF11,115 Nexperia USA Inc. PUMF11.pdf Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
auf Bestellung 145000 Stücke:
Lieferzeit 10-14 Tag (e)
13172+0.034 EUR
Mindestbestellmenge: 13172
Im Einkaufswagen  Stück im Wert von  UAH
PTVS64VP1UP,115 PTVS64VP1UP,115 Nexperia USA Inc. PTVSXP1UP_SER.pdf Description: TVS DIODE 64VWM 103V SOD128/CFP5
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.1V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 64V
Current - Peak Pulse (10/1000µs): 5.8A
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
24+0.76 EUR
50+0.56 EUR
100+0.49 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R8-100BS,118 PSMN3R8-100BS,118 Nexperia USA Inc. PSMN3R8-100BS.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
auf Bestellung 5063 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.55 EUR
10+5 EUR
100+3.55 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PMN40SNAX PMN40SNAX Nexperia USA Inc. PMN40SNA.pdf Description: MOSFET N-CH 60V 4.7A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PBSS302NDH,125 PBSS302NDH,125 Nexperia USA Inc. PBSS302ND.pdf Description: PBSS302NDH - 4A, 40V, NPN
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS302ND,125 PBSS302ND,125 Nexperia USA Inc. PBSS302ND.pdf Description: NOW NEXPERIA PBSS302ND - SMALL S
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84-B3V0,215 BZX84-B3V0,215 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 3V 250MW TO236AB
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 4022 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
136+0.13 EUR
294+0.06 EUR
500+0.056 EUR
1000+0.052 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
74LV125DB,112 74LV125DB,112 Nexperia USA Inc. 74LV125.pdf Description: IC BUFF NON-INVERT 5.5V 14-SSOP
Part Status: Obsolete
Supplier Device Package: 14-SSOP
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 1
Voltage - Supply: 1V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Packaging: Tube
auf Bestellung 2526 Stücke:
Lieferzeit 10-14 Tag (e)
716+0.64 EUR
Mindestbestellmenge: 716
Im Einkaufswagen  Stück im Wert von  UAH
74LV125N,112 74LV125N,112 Nexperia USA Inc. 74LV125.pdf Description: IC BUFFER NON-INVERT 5.5V 14-DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 14-DIP
Part Status: Obsolete
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
194+2.36 EUR
Mindestbestellmenge: 194
Im Einkaufswagen  Stück im Wert von  UAH
PMPB85ENEAX PMPB85ENEAX Nexperia USA Inc. PMPB85ENEA.pdf Description: MOSFET N-CH 60V 3A DFN2020MD-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 21397 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
25+0.73 EUR
50+0.53 EUR
100+0.47 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PMPB25ENEX PMPB25ENEX Nexperia USA Inc. PMPB25ENE.pdf Description: MOSFET DFN2020MD-6
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D120-40EX BUK6D120-40EX Nexperia USA Inc. BUK6D120-40E.pdf Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D120-40EX BUK6D120-40EX Nexperia USA Inc. BUK6D120-40E.pdf Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1220 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
30+0.59 EUR
50+0.43 EUR
100+0.38 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D72-30EX BUK6D72-30EX Nexperia USA Inc. BUK6D72-30E.pdf Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D72-30EX BUK6D72-30EX Nexperia USA Inc. BUK6D72-30E.pdf Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 11358 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
33+0.55 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.23 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D38-30EX BUK6D38-30EX Nexperia USA Inc. BUK6D38-30E.pdf Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D38-30EX BUK6D38-30EX Nexperia USA Inc. BUK6D38-30E.pdf Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
33+0.54 EUR
100+0.36 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D385-100EX BUK6D385-100EX Nexperia USA Inc. BUK6D385-100E.pdf Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.28 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D385-100EX BUK6D385-100EX Nexperia USA Inc. BUK6D385-100E.pdf Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5564 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
24+0.76 EUR
50+0.55 EUR
100+0.48 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D77-60EX BUK6D77-60EX Nexperia USA Inc. BUK6D77-60E.pdf Description: MOSFET N-CH 60V 3.4A/10.6A 6DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4814 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
24+0.76 EUR
50+0.55 EUR
100+0.48 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D22-30EX BUK6D22-30EX Nexperia USA Inc. BUK6D22-30E.pdf Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D22-30EX BUK6D22-30EX Nexperia USA Inc. BUK6D22-30E.pdf Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUF NHDTC144EUF Nexperia USA Inc. NHDTC114_124_144EU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 170 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUF NHDTC144EUF Nexperia USA Inc. NHDTC114_124_144EU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 170 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144ETR NHDTC144ETR Nexperia USA Inc. NHDTC114_124_144ET_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144ETR NHDTC144ETR Nexperia USA Inc. NHDTC114_124_144ET_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
100+0.18 EUR
160+0.11 EUR
500+0.08 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUX NHDTC144EUX Nexperia USA Inc. NHDTC114_124_144EU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUX NHDTC144EUX Nexperia USA Inc. NHDTC114_124_144EU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2718 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
90+0.2 EUR
144+0.12 EUR
500+0.09 EUR
1000+0.079 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
NZX15X,133 NZX_SER.pdf
NZX15X,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 14.72V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14.72 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NZX15A,133 NZX_SER.pdf
NZX15A,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 14.4V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14.4 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 7676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
107+0.17 EUR
172+0.1 EUR
500+0.075 EUR
1000+0.065 EUR
2000+0.058 EUR
5000+0.049 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
NZX15B,133 NZX_SER.pdf
NZX15B,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 14.8V 500MW ALF2
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 14.8 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.044 EUR
20000+0.04 EUR
30000+0.038 EUR
50000+0.035 EUR
70000+0.034 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
NZX15B,133 NZX_SER.pdf
NZX15B,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 14.8V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 14.8 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 9988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
106+0.17 EUR
171+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
2000+0.058 EUR
5000+0.05 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
NZX15C,133 NZX_SER.pdf
NZX15C,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15.2V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
103+0.17 EUR
166+0.11 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
74HC03DB118 74HC_HCT03.pdf
74HC03DB118
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14SSOP
Features: Open Drain
Packaging: Bulk
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1762+0.27 EUR
Mindestbestellmenge: 1762
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R1-40E,118 BUK768R1-40E.pdf
BUK768R1-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
10+2.78 EUR
50+2.11 EUR
100+1.89 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BUK7210-55B,118 BUK7210-55B.pdf
BUK7210-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7210-55B,118 BUK7210-55B.pdf
BUK7210-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-C12,118 NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw
BZT52-C12,118
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER
Tolerance: ±5.42%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-C12,115 NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw
BZT52-C12,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 350MW SOD123
Tolerance: ±5.42%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZV85-C39,133 PHGLS22780-1.pdf?t.download=true&u=5oefqw
BZV85-C39,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 39V 1.3W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
auf Bestellung 76020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2844+0.16 EUR
Mindestbestellmenge: 2844
Im Einkaufswagen  Stück im Wert von  UAH
NHUMD12F NHUMD3_2_12_SER.pdf
NHUMD12F
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
32+0.56 EUR
100+0.3 EUR
500+0.2 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
PESD5V0F1BLD315 PESD5V0F1BLD.pdf
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PESD5V0F1BLD TRANS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PESD5V0F1BSH315 PESD5V0F1BSH.pdf
PESD5V0F1BSH315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 6VC DSN04022
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 6V
Voltage - Breakdown (Min): 7.2V
Bidirectional Channels: 1
Supplier Device Package: DSN0402-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: Telecom
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1142+0.39 EUR
Mindestbestellmenge: 1142
Im Einkaufswagen  Stück im Wert von  UAH
PESD5V0F1BSHYL PESD5V0F1BSH.pdf
PESD5V0F1BSHYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5V 6V DSN0402-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LSF0101GMX LSF0101.pdf
LSF0101GMX
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.95 V ~ 5 V
Voltage - VCCB: 0.95 V ~ 5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 4777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
38+0.46 EUR
50+0.38 EUR
100+0.36 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
74AHC1G4210GW-Q100125 74AHC1G4210_Q100.pdf
74AHC1G4210GW-Q100125
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74AHC1G4210GW-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHC1G4214GW,125 74AHC1G4214.pdf
74AHC1G4214GW,125
Hersteller: Nexperia USA Inc.
Description: 12-STAGE DIVIDER AND OSCILLATOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHC1G4214GW-Q100125 74AHC1G4214_Q100.pdf
74AHC1G4214GW-Q100125
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74AHC1G4214GW-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-30YL,115 PSMN7R0-30YL.pdf
PSMN7R0-30YL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 76A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 12 V
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-30YLC,115 PSMN7R0-30YLC.pdf
PSMN7R0-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 61A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
auf Bestellung 1153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-C15,115 BZT52_SER.pdf
BZT52-C15,115
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE, 15V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-C15,118 NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw
BZT52-C15,118
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE, 15V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC846B/DG/B4R BC846XW_SER.pdf
BC846B/DG/B4R
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC846B/DG/B4VL BC846XW_SER.pdf
BC846B/DG/B4VL
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC846B/DG/B3,215 BC846XW_SER.pdf
BC846B/DG/B3,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-B15X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15V 590MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-B39X BZT52-B_SER.pdf
BZT52-B39X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 39V 590MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 590 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 75 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2.05%
Packaging: Cut Tape (CT)
auf Bestellung 6375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
110+0.16 EUR
243+0.073 EUR
500+0.072 EUR
1000+0.071 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
NHUMB9F NHUMB10_13_9_SER.pdf
NHUMB9F
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 80V 6-TSSOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDZ10BGW,115 PDZ-GW_SER.pdf
PDZ10BGW,115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PDZ10BGW - ZENER DI
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.034 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
PDZ10BGW115 NEXP-S-A0003514607-1.pdf?t.download=true&u=5oefqw
PDZ10BGW115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PDZ10BGW - ZENER DI
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.034 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
PUMF11,115 PUMF11.pdf
PUMF11,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
auf Bestellung 145000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.034 EUR
Mindestbestellmenge: 13172
Im Einkaufswagen  Stück im Wert von  UAH
PTVS64VP1UP,115 PTVSXP1UP_SER.pdf
PTVS64VP1UP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 64VWM 103V SOD128/CFP5
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.1V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 64V
Current - Peak Pulse (10/1000µs): 5.8A
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
24+0.76 EUR
50+0.56 EUR
100+0.49 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R8-100BS,118 PSMN3R8-100BS.pdf
PSMN3R8-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
auf Bestellung 5063 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.55 EUR
10+5 EUR
100+3.55 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PMN40SNAX PMN40SNA.pdf
PMN40SNAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.7A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PBSS302NDH,125 PBSS302ND.pdf
PBSS302NDH,125
Hersteller: Nexperia USA Inc.
Description: PBSS302NDH - 4A, 40V, NPN
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS302ND,125 PBSS302ND.pdf
PBSS302ND,125
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS302ND - SMALL S
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84-B3V0,215 BZX84_SER.pdf
BZX84-B3V0,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3V 250MW TO236AB
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 4022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
136+0.13 EUR
294+0.06 EUR
500+0.056 EUR
1000+0.052 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
74LV125DB,112 74LV125.pdf
74LV125DB,112
Hersteller: Nexperia USA Inc.
Description: IC BUFF NON-INVERT 5.5V 14-SSOP
Part Status: Obsolete
Supplier Device Package: 14-SSOP
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 1
Voltage - Supply: 1V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Packaging: Tube
auf Bestellung 2526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
716+0.64 EUR
Mindestbestellmenge: 716
Im Einkaufswagen  Stück im Wert von  UAH
74LV125N,112 74LV125.pdf
74LV125N,112
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 14-DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 14-DIP
Part Status: Obsolete
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
194+2.36 EUR
Mindestbestellmenge: 194
Im Einkaufswagen  Stück im Wert von  UAH
PMPB85ENEAX PMPB85ENEA.pdf
PMPB85ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 21397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.73 EUR
50+0.53 EUR
100+0.47 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PMPB25ENEX PMPB25ENE.pdf
PMPB25ENEX
Hersteller: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D120-40EX BUK6D120-40E.pdf
BUK6D120-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D120-40EX BUK6D120-40E.pdf
BUK6D120-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
30+0.59 EUR
50+0.43 EUR
100+0.38 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D72-30EX BUK6D72-30E.pdf
BUK6D72-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D72-30EX BUK6D72-30E.pdf
BUK6D72-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 11358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
33+0.55 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.23 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D38-30EX BUK6D38-30E.pdf
BUK6D38-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D38-30EX BUK6D38-30E.pdf
BUK6D38-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
100+0.36 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D385-100EX BUK6D385-100E.pdf
BUK6D385-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D385-100EX BUK6D385-100E.pdf
BUK6D385-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.76 EUR
50+0.55 EUR
100+0.48 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D77-60EX BUK6D77-60E.pdf
BUK6D77-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3.4A/10.6A 6DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4814 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.76 EUR
50+0.55 EUR
100+0.48 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D22-30EX BUK6D22-30E.pdf
BUK6D22-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D22-30EX BUK6D22-30E.pdf
BUK6D22-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUF NHDTC114_124_144EU_SER.pdf
NHDTC144EUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 170 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUF NHDTC114_124_144EU_SER.pdf
NHDTC144EUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 170 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144ETR NHDTC114_124_144ET_SER.pdf
NHDTC144ETR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144ETR NHDTC114_124_144ET_SER.pdf
NHDTC144ETR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
160+0.11 EUR
500+0.08 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUX NHDTC114_124_144EU_SER.pdf
NHDTC144EUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUX NHDTC114_124_144EU_SER.pdf
NHDTC144EUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
90+0.2 EUR
144+0.12 EUR
500+0.09 EUR
1000+0.079 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 52 104 156 193 194 195 196 197 198 199 200 201 202 203 208 260 312 364 416 468 520 523  [ Nächste Seite >> ]