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PSMN7R0-30YLC,115 PSMN7R0-30YLC,115 Nexperia USA Inc. PSMN7R0-30YLC.pdf Description: MOSFET N-CH 30V 61A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
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23+0.79 EUR
100+0.57 EUR
500+0.49 EUR
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BZT52-C15,115 BZT52-C15,115 Nexperia USA Inc. BZT52_SER.pdf Description: ZENER DIODE, 15V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZT52-C15,118 BZT52-C15,118 Nexperia USA Inc. NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw Description: ZENER DIODE, 15V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BC846B/DG/B4R BC846B/DG/B4R Nexperia USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC846B/DG/B4VL BC846B/DG/B4VL Nexperia USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC846B/DG/B3,215 BC846B/DG/B3,215 Nexperia USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BZT52-B15X BZT52-B15X Nexperia USA Inc. BZT52-B_SER.pdf Description: DIODE ZENER 15V 590MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Qualification: AEC-Q101
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91+0.19 EUR
122+0.14 EUR
256+0.069 EUR
500+0.067 EUR
1000+0.065 EUR
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BZT52-B39X BZT52-B39X Nexperia USA Inc. BZT52-B_SER.pdf Description: DIODE ZENER 39V 590MW SOD123
Tolerance: ±2.05%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
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110+0.16 EUR
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500+0.072 EUR
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NHUMB9F NHUMB9F Nexperia USA Inc. NHUMB10_13_9_SER.pdf Description: TRANS PREBIAS 2PNP 80V 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ10BGW,115 PDZ10BGW,115 Nexperia USA Inc. PDZ-GW_SER.pdf Description: NOW NEXPERIA PDZ10BGW - ZENER DI
auf Bestellung 69000 Stücke:
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15000+0.034 EUR
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PDZ10BGW115 PDZ10BGW115 Nexperia USA Inc. NEXP-S-A0003514607-1.pdf?t.download=true&u=5oefqw Description: NOW NEXPERIA PDZ10BGW - ZENER DI
auf Bestellung 57000 Stücke:
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PUMF11,115 PUMF11,115 Nexperia USA Inc. PUMF11.pdf Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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PTVS64VP1UP,115 PTVS64VP1UP,115 Nexperia USA Inc. PTVSXP1UP_SER.pdf Description: TVS DIODE 64VWM 103V SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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500+0.29 EUR
1000+0.26 EUR
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PSMN3R8-100BS,118 PSMN3R8-100BS,118 Nexperia USA Inc. PSMN3R8-100BS.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
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10+3.93 EUR
100+3.19 EUR
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PMN40SNAX PMN40SNAX Nexperia USA Inc. PMN40SNA.pdf Description: MOSFET N-CH 60V 4.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
Qualification: AEC-Q101
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3000+0.25 EUR
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PBSS302NDH,125 PBSS302NDH,125 Nexperia USA Inc. PBSS302ND.pdf Description: PBSS302NDH - 4A, 40V, NPN
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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PBSS302ND,125 PBSS302ND,125 Nexperia USA Inc. PBSS302ND.pdf Description: NOW NEXPERIA PBSS302ND - SMALL S
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZX84-B3V0,215 BZX84-B3V0,215 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 3V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 4022 Stücke:
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136+0.13 EUR
294+0.06 EUR
500+0.056 EUR
1000+0.052 EUR
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PMPB85ENEAX PMPB85ENEAX Nexperia USA Inc. PMPB85ENEA.pdf Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
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39+0.45 EUR
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PMPB25ENEX PMPB25ENEX Nexperia USA Inc. PMPB25ENE.pdf Description: MOSFET DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
Produkt ist nicht verfügbar
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BUK6D120-40EX BUK6D120-40EX Nexperia USA Inc. BUK6D120-40E.pdf Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Qualification: AEC-Q101
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3000+0.19 EUR
6000+0.17 EUR
9000+0.16 EUR
15000+0.15 EUR
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BUK6D120-40EX BUK6D120-40EX Nexperia USA Inc. BUK6D120-40E.pdf Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Qualification: AEC-Q101
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34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
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BUK6D72-30EX BUK6D72-30EX Nexperia USA Inc. BUK6D72-30E.pdf Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Qualification: AEC-Q101
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BUK6D72-30EX BUK6D72-30EX Nexperia USA Inc. BUK6D72-30E.pdf Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Qualification: AEC-Q101
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500+0.27 EUR
1000+0.23 EUR
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BUK6D38-30EX BUK6D38-30EX Nexperia USA Inc. BUK6D38-30E.pdf Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
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BUK6D38-30EX BUK6D38-30EX Nexperia USA Inc. BUK6D38-30E.pdf Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
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BUK6D385-100EX BUK6D385-100EX Nexperia USA Inc. BUK6D385-100E.pdf Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Qualification: AEC-Q101
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BUK6D385-100EX BUK6D385-100EX Nexperia USA Inc. BUK6D385-100E.pdf Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Qualification: AEC-Q101
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BUK6D77-60EX BUK6D77-60EX Nexperia USA Inc. BUK6D77-60E.pdf Description: MOSFET N-CH 60V 3.4A/10.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
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BUK6D22-30EX BUK6D22-30EX Nexperia USA Inc. BUK6D22-30E.pdf Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6D22-30EX BUK6D22-30EX Nexperia USA Inc. BUK6D22-30E.pdf Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Qualification: AEC-Q101
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NHDTC144EUF NHDTC144EUF Nexperia USA Inc. NHDTC114_124_144EU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTC144EUF NHDTC144EUF Nexperia USA Inc. NHDTC114_124_144EU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTC144ETR NHDTC144ETR Nexperia USA Inc. NHDTC114_124_144ET_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTC144ETR NHDTC144ETR Nexperia USA Inc. NHDTC114_124_144ET_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTC144EUX NHDTC144EUX Nexperia USA Inc. NHDTC114_124_144EU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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3000+0.058 EUR
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NHDTC144EUX NHDTC144EUX Nexperia USA Inc. NHDTC114_124_144EU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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500+0.1 EUR
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PESD5V0S1UA/ZLX PESD5V0S1UA/ZLX Nexperia USA Inc. PESD5V0S1UA.pdf Description: TVS DIODE 5VWM 9.8VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 480pF @ 1MHz
Current - Peak Pulse (10/1000µs): 47A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 890W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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TDZ4V7J,115 TDZ4V7J,115 Nexperia USA Inc. TDZXJ_SER.pdf Description: DIODE ZENER 4.7V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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NHUMD13X NHUMD13X Nexperia USA Inc. Description: NHUMD13/SOT363/SC-88
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74HC4052PW Nexperia USA Inc. analog-switches-operation-application-insights Description: DIFFERENTIAL MULTIPLEXER, 1 FUNC
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BC817-40QCZ BC817-40QCZ Nexperia USA Inc. BC817QC_SER.pdf Description: TRANS NPN 45V 0.5A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 380 mW
Qualification: AEC-Q101
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80+0.22 EUR
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BZX79-C8V2,113 BZX79-C8V2,113 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 8.2V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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74LVT573PW,118 74LVT573PW,118 Nexperia USA Inc. 74LVT573.pdf Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 2.7ns
Supplier Device Package: 20-TSSOP
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74LVC8T245PW 74LVC8T245PW Nexperia USA Inc. 74LVC_LVCH8T245.pdf Description: IC TRANSLATION TXRX 5.5V 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 24-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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BUK9Y25-80E,115 BUK9Y25-80E,115 Nexperia USA Inc. BUK9Y25-80E.pdf Description: MOSFET N-CH 80V 37A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V
Qualification: AEC-Q101
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74AHCT1G14GW 74AHCT1G14GW Nexperia USA Inc. PHGL-S-A0001393175-1.pdf?t.download=true&u=5oefqw Description: INVERTER, AHCT/VHCT/VT SERIES, 1
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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74HCT3G14DP,125 74HCT3G14DP,125 Nexperia USA Inc. 74HC_HCT3G14.pdf Description: IC INVERT SCHMITT 3CH 3IN 8TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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74LV08APWJ 74LV08APWJ Nexperia USA Inc. 74LV08A.pdf Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 3.8V
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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74LV08APWJ 74LV08APWJ Nexperia USA Inc. 74LV08A.pdf Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 3.8V
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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74LV00BQ,115 74LV00BQ,115 Nexperia USA Inc. 74LV00.pdf Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
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74LV00BQ,115 74LV00BQ,115 Nexperia USA Inc. 74LV00.pdf Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 3675 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
52+0.34 EUR
58+0.31 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
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74LV00D,118 74LV00D,118 Nexperia USA Inc. 74LV00.pdf Description: IC GATE NAND 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 5408 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
53+0.34 EUR
60+0.3 EUR
100+0.26 EUR
250+0.24 EUR
500+0.22 EUR
1000+0.21 EUR
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BUK9Y2R8-40HX Nexperia USA Inc. BUK9Y2R8-40H.pdf Description: BUK9Y2R8-40H/SOT669/LFPAK
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 172W (Tc)
Grade: Automotive
Vgs (Max): +16V, -10V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9Y2R4-40HX Nexperia USA Inc. BUK9Y2R4-40H.pdf Description: BUK9Y2R4-40H/SOT669/LFPAK
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 163W (Tc)
Grade: Automotive
Vgs (Max): +16V, -10V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9Y1R9-40HX Nexperia USA Inc. BUK9Y1R9-40H.pdf Description: BUK9Y1R9-40H/SOT669/LFPAK
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BUK6Y25-40PX BUK6Y25-40PX Nexperia USA Inc. Nexperia-Automotive-Selection-Guide-2018.pdf Description: MOSFET P-CH 40V 38A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6Y25-40PX BUK6Y25-40PX Nexperia USA Inc. Nexperia-Automotive-Selection-Guide-2018.pdf Description: MOSFET P-CH 40V 38A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6Y20-30PX BUK6Y20-30PX Nexperia USA Inc. Nexperia-Automotive-Selection-Guide-2018.pdf Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6Y20-30PX BUK6Y20-30PX Nexperia USA Inc. Nexperia-Automotive-Selection-Guide-2018.pdf Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
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PSMN7R0-30YLC,115 PSMN7R0-30YLC.pdf
PSMN7R0-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 61A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V
auf Bestellung 1949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
23+0.79 EUR
100+0.57 EUR
500+0.49 EUR
Mindestbestellmenge: 19
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BZT52-C15,115 BZT52_SER.pdf
BZT52-C15,115
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE, 15V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZT52-C15,118 NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw
BZT52-C15,118
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE, 15V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BC846B/DG/B4R BC846XW_SER.pdf
BC846B/DG/B4R
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC846B/DG/B4VL BC846XW_SER.pdf
BC846B/DG/B4VL
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC846B/DG/B3,215 BC846XW_SER.pdf
BC846B/DG/B3,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BZT52-B15X BZT52-B_SER.pdf
BZT52-B15X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15V 590MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Qualification: AEC-Q101
auf Bestellung 4589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
122+0.14 EUR
256+0.069 EUR
500+0.067 EUR
1000+0.065 EUR
Mindestbestellmenge: 91
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BZT52-B39X BZT52-B_SER.pdf
BZT52-B39X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 39V 590MW SOD123
Tolerance: ±2.05%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 6375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
110+0.16 EUR
243+0.073 EUR
500+0.072 EUR
1000+0.071 EUR
Mindestbestellmenge: 77
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NHUMB9F NHUMB10_13_9_SER.pdf
NHUMB9F
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 80V 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ10BGW,115 PDZ-GW_SER.pdf
PDZ10BGW,115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PDZ10BGW - ZENER DI
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.034 EUR
Mindestbestellmenge: 15000
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PDZ10BGW115 NEXP-S-A0003514607-1.pdf?t.download=true&u=5oefqw
PDZ10BGW115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PDZ10BGW - ZENER DI
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.034 EUR
Mindestbestellmenge: 15000
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PUMF11,115 PUMF11.pdf
PUMF11,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 145000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.034 EUR
Mindestbestellmenge: 13172
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PTVS64VP1UP,115 PTVSXP1UP_SER.pdf
PTVS64VP1UP,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 64VWM 103V SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
33+0.55 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 22
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PSMN3R8-100BS,118 PSMN3R8-100BS.pdf
PSMN3R8-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
auf Bestellung 12292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
10+3.93 EUR
100+3.19 EUR
Mindestbestellmenge: 4
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PMN40SNAX PMN40SNA.pdf
PMN40SNAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
Mindestbestellmenge: 3000
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PBSS302NDH,125 PBSS302ND.pdf
PBSS302NDH,125
Hersteller: Nexperia USA Inc.
Description: PBSS302NDH - 4A, 40V, NPN
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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PBSS302ND,125 PBSS302ND.pdf
PBSS302ND,125
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS302ND - SMALL S
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZX84-B3V0,215 BZX84_SER.pdf
BZX84-B3V0,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 4022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
136+0.13 EUR
294+0.06 EUR
500+0.056 EUR
1000+0.052 EUR
Mindestbestellmenge: 91
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PMPB85ENEAX PMPB85ENEA.pdf
PMPB85ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 33010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
39+0.45 EUR
100+0.24 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
PMPB25ENEX PMPB25ENE.pdf
PMPB25ENEX
Hersteller: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
Produkt ist nicht verfügbar
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BUK6D120-40EX BUK6D120-40E.pdf
BUK6D120-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.17 EUR
9000+0.16 EUR
15000+0.15 EUR
Mindestbestellmenge: 3000
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BUK6D120-40EX BUK6D120-40E.pdf
BUK6D120-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 22533 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 21
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BUK6D72-30EX BUK6D72-30E.pdf
BUK6D72-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
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BUK6D72-30EX BUK6D72-30E.pdf
BUK6D72-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 11358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
33+0.55 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.23 EUR
Mindestbestellmenge: 26
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BUK6D38-30EX BUK6D38-30E.pdf
BUK6D38-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6D38-30EX BUK6D38-30E.pdf
BUK6D38-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
100+0.36 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 24
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BUK6D385-100EX BUK6D385-100E.pdf
BUK6D385-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D385-100EX BUK6D385-100E.pdf
BUK6D385-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 13463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
37+0.48 EUR
100+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 23
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BUK6D77-60EX BUK6D77-60E.pdf
BUK6D77-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3.4A/10.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 21709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
36+0.49 EUR
100+0.22 EUR
Mindestbestellmenge: 29
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BUK6D22-30EX BUK6D22-30E.pdf
BUK6D22-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6D22-30EX BUK6D22-30E.pdf
BUK6D22-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.63 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.26 EUR
Mindestbestellmenge: 22
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NHDTC144EUF NHDTC114_124_144EU_SER.pdf
NHDTC144EUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTC144EUF NHDTC114_124_144EU_SER.pdf
NHDTC144EUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTC144ETR NHDTC114_124_144ET_SER.pdf
NHDTC144ETR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTC144ETR NHDTC114_124_144ET_SER.pdf
NHDTC144ETR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTC144EUX NHDTC114_124_144EU_SER.pdf
NHDTC144EUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.058 EUR
6000+0.052 EUR
9000+0.049 EUR
15000+0.045 EUR
21000+0.043 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NHDTC144EUX NHDTC114_124_144EU_SER.pdf
NHDTC144EUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 26887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
80+0.22 EUR
129+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
Mindestbestellmenge: 48
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PESD5V0S1UA/ZLX PESD5V0S1UA.pdf
PESD5V0S1UA/ZLX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9.8VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 480pF @ 1MHz
Current - Peak Pulse (10/1000µs): 47A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 890W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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TDZ4V7J,115 TDZXJ_SER.pdf
TDZ4V7J,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
84+0.21 EUR
162+0.11 EUR
500+0.1 EUR
1000+0.092 EUR
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NHUMD13X
NHUMD13X
Hersteller: Nexperia USA Inc.
Description: NHUMD13/SOT363/SC-88
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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74HC4052PW analog-switches-operation-application-insights
Hersteller: Nexperia USA Inc.
Description: DIFFERENTIAL MULTIPLEXER, 1 FUNC
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BC817-40QCZ BC817QC_SER.pdf
BC817-40QCZ
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 380 mW
Qualification: AEC-Q101
auf Bestellung 5076 Stücke:
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Anzahl Preis
50+0.35 EUR
80+0.22 EUR
129+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
2000+0.078 EUR
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BZX79-C8V2,113 BZX79.pdf
BZX79-C8V2,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 8.2V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
auf Bestellung 6963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
193+0.092 EUR
409+0.043 EUR
500+0.04 EUR
1000+0.032 EUR
5000+0.031 EUR
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74LVT573PW,118 74LVT573.pdf
74LVT573PW,118
Hersteller: Nexperia USA Inc.
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 2.7ns
Supplier Device Package: 20-TSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.36 EUR
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74LVC8T245PW 74LVC_LVCH8T245.pdf
74LVC8T245PW
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATION TXRX 5.5V 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 24-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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BUK9Y25-80E,115 BUK9Y25-80E.pdf
BUK9Y25-80E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
15+1.25 EUR
100+0.87 EUR
500+0.7 EUR
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74AHCT1G14GW PHGL-S-A0001393175-1.pdf?t.download=true&u=5oefqw
74AHCT1G14GW
Hersteller: Nexperia USA Inc.
Description: INVERTER, AHCT/VHCT/VT SERIES, 1
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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74HCT3G14DP,125 74HC_HCT3G14.pdf
74HCT3G14DP,125
Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 3CH 3IN 8TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 7135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.48 EUR
41+0.43 EUR
100+0.37 EUR
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500+0.33 EUR
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74LV08APWJ 74LV08A.pdf
74LV08APWJ
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 3.8V
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.23 EUR
7500+0.22 EUR
Mindestbestellmenge: 2500
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74LV08APWJ 74LV08A.pdf
74LV08APWJ
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 3.8V
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 12893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.38 EUR
52+0.34 EUR
100+0.29 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
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74LV00BQ,115 74LV00.pdf
74LV00BQ,115
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
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74LV00BQ,115 74LV00.pdf
74LV00BQ,115
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 3675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
58+0.31 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
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74LV00D,118 74LV00.pdf
74LV00D,118
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 5408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
53+0.34 EUR
60+0.3 EUR
100+0.26 EUR
250+0.24 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 36
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BUK9Y2R8-40HX BUK9Y2R8-40H.pdf
Hersteller: Nexperia USA Inc.
Description: BUK9Y2R8-40H/SOT669/LFPAK
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 172W (Tc)
Grade: Automotive
Vgs (Max): +16V, -10V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9Y2R4-40HX BUK9Y2R4-40H.pdf
Hersteller: Nexperia USA Inc.
Description: BUK9Y2R4-40H/SOT669/LFPAK
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 163W (Tc)
Grade: Automotive
Vgs (Max): +16V, -10V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9Y1R9-40HX BUK9Y1R9-40H.pdf
Hersteller: Nexperia USA Inc.
Description: BUK9Y1R9-40H/SOT669/LFPAK
Produkt ist nicht verfügbar
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BUK6Y25-40PX Nexperia-Automotive-Selection-Guide-2018.pdf
BUK6Y25-40PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 38A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6Y25-40PX Nexperia-Automotive-Selection-Guide-2018.pdf
BUK6Y25-40PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 38A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6Y20-30PX Nexperia-Automotive-Selection-Guide-2018.pdf
BUK6Y20-30PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6Y20-30PX Nexperia-Automotive-Selection-Guide-2018.pdf
BUK6Y20-30PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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