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PMH950UPEH PMH950UPEH Nexperia USA Inc. PMH950UPE.pdf Description: MOSFET P-CH 20V 530MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 30000 Stücke:
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10000+0.066 EUR
20000+0.064 EUR
30000+0.063 EUR
Mindestbestellmenge: 10000
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PMH950UPEH PMH950UPEH Nexperia USA Inc. PMH950UPE.pdf Description: MOSFET P-CH 20V 530MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 40694 Stücke:
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100+0.18 EUR
141+0.12 EUR
163+0.11 EUR
192+0.092 EUR
250+0.083 EUR
500+0.079 EUR
1000+0.075 EUR
2500+0.07 EUR
Mindestbestellmenge: 100
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PMH550UPEH PMH550UPEH Nexperia USA Inc. PMH550UPE.pdf Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
Produkt ist nicht verfügbar
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PMH550UPEH PMH550UPEH Nexperia USA Inc. PMH550UPE.pdf Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
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106+0.17 EUR
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2000+0.1 EUR
5000+0.091 EUR
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PMZB950UPELYL PMZB950UPELYL Nexperia USA Inc. PMZB950UPEL.pdf Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 28883 Stücke:
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50+0.36 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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PMZ350UPEYL PMZ350UPEYL Nexperia USA Inc. PMZ350UPE.pdf Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
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47+0.38 EUR
65+0.27 EUR
100+0.24 EUR
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PMEG150G20ELRX PMEG150G20ELRX Nexperia USA Inc. Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Produkt ist nicht verfügbar
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NXS0108BQX NXS0108BQX Nexperia USA Inc. NXS0108.pdf Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 3283 Stücke:
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15+1.24 EUR
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100+0.98 EUR
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XS3A1T5157GSH XS3A1T5157GSH Nexperia USA Inc. XS3A1T5157.pdf Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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XS3A1T5157GSH XS3A1T5157GSH Nexperia USA Inc. XS3A1T5157.pdf Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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74LVC1G3157GW-Q100,125 74LVC1G3157GW-Q100,125 Nexperia USA Inc. 74LVC1G3157_Q100.pdf Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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74LVC1G3157GW-Q100125 Nexperia USA Inc. 74LVC1G3157_Q100.pdf Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PMEG150G10ELRX PMEG150G10ELRX Nexperia USA Inc. Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Produkt ist nicht verfügbar
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BC857CW/DG/B4F BC857CW/DG/B4F Nexperia USA Inc. BC856W_BC857W_BC858W.pdf Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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PMEG060V030EPDZ PMEG060V030EPDZ Nexperia USA Inc. PMEG060V030EPD.pdf Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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1500+0.36 EUR
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PMEG060V030EPDZ PMEG060V030EPDZ Nexperia USA Inc. PMEG060V030EPD.pdf Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1955 Stücke:
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21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
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BUK7909-75ATE127 BUK7909-75ATE127 Nexperia USA Inc. BUK7909-75ATE.pdf Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BUK7909-75ATE,127 BUK7909-75ATE,127 Nexperia USA Inc. BUK7909-75ATE.pdf Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7909-75AIE,127 BUK7909-75AIE,127 Nexperia USA Inc. BUK7909-75AIE.pdf Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ20B,115 PDZ20B,115 Nexperia USA Inc. PDZ-B_SER.pdf Description: DIODE ZENER 20V 400MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
auf Bestellung 2902 Stücke:
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87+0.2 EUR
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141+0.13 EUR
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PTVS12VS1UR/8X PTVS12VS1UR/8X Nexperia USA Inc. PTVSXS1UR_SER.pdf Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMV52ENEAR PMV52ENEAR Nexperia USA Inc. PMV52ENEA.pdf Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.14 EUR
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PMV52ENEAR PMV52ENEAR Nexperia USA Inc. PMV52ENEA.pdf Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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38+0.48 EUR
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500+0.23 EUR
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NHDTC143ZUF NHDTC143ZUF Nexperia USA Inc. NHDTC123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 10000 Stücke:
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10000+0.059 EUR
Mindestbestellmenge: 10000
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NHDTC143ZUF NHDTC143ZUF Nexperia USA Inc. NHDTC123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 18994 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
82+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.086 EUR
2000+0.076 EUR
5000+0.065 EUR
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NHDTC143ZTR NHDTC143ZTR Nexperia USA Inc. NHDTC123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.066 EUR
6000+0.059 EUR
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NHDTC143ZTR NHDTC143ZTR Nexperia USA Inc. NHDTC123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6292 Stücke:
Lieferzeit 10-14 Tag (e)
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88+0.2 EUR
142+0.12 EUR
500+0.091 EUR
1000+0.08 EUR
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NHDTC143ZUX NHDTC143ZUX Nexperia USA Inc. NHDTC123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.069 EUR
6000+0.061 EUR
9000+0.058 EUR
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NHDTC143ZUX NHDTC143ZUX Nexperia USA Inc. NHDTC123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 15150 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.094 EUR
1000+0.083 EUR
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BUK7S1R5-40HJ BUK7S1R5-40HJ Nexperia USA Inc. BUK7S1R5-40H.pdf Description: MOSFET N-CH 40V 260A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7S1R5-40HJ BUK7S1R5-40HJ Nexperia USA Inc. BUK7S1R5-40H.pdf Description: MOSFET N-CH 40V 260A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1946 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
Mindestbestellmenge: 8
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BUK7S0R9-40HJ BUK7S0R9-40HJ Nexperia USA Inc. BUK7S0R9-40H.pdf Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7S0R9-40HJ BUK7S0R9-40HJ Nexperia USA Inc. BUK7S0R9-40H.pdf Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PSMNR90-40SSHJ PSMNR90-40SSHJ Nexperia USA Inc. PSMNR90-40SSH.pdf Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMNR90-40SSHJ PSMNR90-40SSHJ Nexperia USA Inc. PSMNR90-40SSH.pdf Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PSMNR70-40SSHJ PSMNR70-40SSHJ Nexperia USA Inc. PSMNR70-40SSH.pdf Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
auf Bestellung 4931 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.14 EUR
10+5.15 EUR
100+4.17 EUR
500+3.92 EUR
1000+3.79 EUR
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PTVS7V0S1UR,115 PTVS7V0S1UR,115 Nexperia USA Inc. PTVSXS1UR_SER.pdf Description: TVS DIODE 7VWM 12VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8391 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
29+0.62 EUR
50+0.45 EUR
100+0.4 EUR
Mindestbestellmenge: 18
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74LVT16374ADGG,118 74LVT16374ADGG,118 Nexperia USA Inc. 74LVT_LVTH16374A.pdf Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 120 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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74LVT16374ADGG,118 74LVT16374ADGG,118 Nexperia USA Inc. 74LVT_LVTH16374A.pdf Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 120 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 572 Stücke:
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10+1.83 EUR
14+1.31 EUR
50+1.11 EUR
100+1.04 EUR
Mindestbestellmenge: 10
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BZX84-A75215 BZX84-A75215 Nexperia USA Inc. BZX84_SER.pdf Description: NOW NEXPERIA ZENER DIODE, 75V, 1
Produkt ist nicht verfügbar
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BCP56T,115 BCP56T,115 Nexperia USA Inc. BCP56T_SER.pdf Description: 1A, 80V, NPN, SILICON
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BAT46GW,118 BAT46GW,118 Nexperia USA Inc. BAT46GW.pdf Description: RECTIFIER DIODE, SCHOTTKY, 0.25A
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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74LVC273BQ,115 74LVC273BQ,115 Nexperia USA Inc. 74LVC273.pdf Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 230 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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74LVC273BQ,115 74LVC273BQ,115 Nexperia USA Inc. 74LVC273.pdf Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 230 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 622 Stücke:
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21+0.86 EUR
30+0.6 EUR
33+0.54 EUR
100+0.47 EUR
250+0.43 EUR
500+0.41 EUR
Mindestbestellmenge: 21
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PMEG060V050EPD,139 Nexperia USA Inc. PMEG060V050EPD.pdf Description: NOW NEXPERIA PMEG060V050EPD
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PMEG045V150EPD,139 PMEG045V150EPD,139 Nexperia USA Inc. PMEG045V150EPD.pdf Description: NOW NEXPERIA PMEG045V150EPD
Packaging: Bulk
Part Status: Active
auf Bestellung 2810 Stücke:
Lieferzeit 10-14 Tag (e)
838+0.63 EUR
Mindestbestellmenge: 838
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LD6816CX4/C13P,315 LD6816CX4/C13P,315 Nexperia USA Inc. PHGLS25656-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 1.3V 150MA 4-WLCSP
Packaging: Bulk
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Part Status: Active
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
auf Bestellung 36000 Stücke:
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1299+0.35 EUR
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74LVCH8T245BQ118 74LVCH8T245BQ118 Nexperia USA Inc. 74LVC_LVCH8T245.pdf Description: IC TRANSLATR TXRX 5.5V 24DHVQFN
Produkt ist nicht verfügbar
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BUK661R9-40C,118 BUK661R9-40C,118 Nexperia USA Inc. BUK661R9-40C.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK661R9-40C,118 BUK661R9-40C,118 Nexperia USA Inc. BUK661R9-40C.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.95 EUR
10+4.11 EUR
100+3.02 EUR
Mindestbestellmenge: 3
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BUK9Y1R9-40H,115 BUK9Y1R9-40H,115 Nexperia USA Inc. BUK9Y1R9-40H.pdf Description: POWER FIELD-EFFECT TRANSISTOR
Produkt ist nicht verfügbar
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NHDTA114YTR NHDTA114YTR Nexperia USA Inc. NHDTA123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTA114YUX NHDTA114YUX Nexperia USA Inc. NHDTA123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS PNP 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 25489 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
86+0.21 EUR
139+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
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BCP56H,115 BCP56H,115 Nexperia USA Inc. BCP56H_SER.pdf Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.2 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC857BQBZ BC857BQBZ Nexperia USA Inc. BC857XQB_SER.pdf Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Produkt ist nicht verfügbar
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BC857BQBZ BC857BQBZ Nexperia USA Inc. BC857XQB_SER.pdf Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Produkt ist nicht verfügbar
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BZT52-C5V1,115 BZT52-C5V1,115 Nexperia USA Inc. BZT52_SER.pdf Description: ZENER DIODE, 5.1V, 4.99%, 0.41W,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BCP56-10T,115 BCP56-10T,115 Nexperia USA Inc. BCP56T_SER.pdf Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
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LSF0102GXX LSF0102GXX Nexperia USA Inc. LSF0102.pdf Description: IC TRANSLTR BIDIRECTIONAL 8X2SON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 5494 Stücke:
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22+0.81 EUR
31+0.58 EUR
35+0.52 EUR
100+0.45 EUR
250+0.42 EUR
500+0.4 EUR
1000+0.38 EUR
2500+0.36 EUR
5000+0.35 EUR
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LSF0102DCH LSF0102DCH Nexperia USA Inc. LSF0102.pdf Description: IC TRANSLTR BIDIRECTIONAL 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 8-VSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 9000 Stücke:
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3000+0.36 EUR
Mindestbestellmenge: 3000
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PMH950UPEH PMH950UPE.pdf
PMH950UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 530MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.066 EUR
20000+0.064 EUR
30000+0.063 EUR
Mindestbestellmenge: 10000
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PMH950UPEH PMH950UPE.pdf
PMH950UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 530MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 40694 Stücke:
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Anzahl Preis
100+0.18 EUR
141+0.12 EUR
163+0.11 EUR
192+0.092 EUR
250+0.083 EUR
500+0.079 EUR
1000+0.075 EUR
2500+0.07 EUR
Mindestbestellmenge: 100
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PMH550UPEH PMH550UPE.pdf
PMH550UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
Produkt ist nicht verfügbar
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PMH550UPEH PMH550UPE.pdf
PMH550UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
auf Bestellung 6713 Stücke:
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Anzahl Preis
48+0.37 EUR
71+0.25 EUR
106+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.091 EUR
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PMZB950UPELYL PMZB950UPEL.pdf
PMZB950UPELYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 28883 Stücke:
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Anzahl Preis
31+0.58 EUR
50+0.36 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
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PMZ350UPEYL PMZ350UPE.pdf
PMZ350UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
47+0.38 EUR
65+0.27 EUR
100+0.24 EUR
Mindestbestellmenge: 29
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PMEG150G20ELRX
PMEG150G20ELRX
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Produkt ist nicht verfügbar
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NXS0108BQX NXS0108.pdf
NXS0108BQX
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 3283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
15+1.24 EUR
50+1.04 EUR
100+0.98 EUR
Mindestbestellmenge: 11
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XS3A1T5157GSH XS3A1T5157.pdf
XS3A1T5157GSH
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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XS3A1T5157GSH XS3A1T5157.pdf
XS3A1T5157GSH
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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74LVC1G3157GW-Q100,125 74LVC1G3157_Q100.pdf
74LVC1G3157GW-Q100,125
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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74LVC1G3157GW-Q100125 74LVC1G3157_Q100.pdf
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PMEG150G10ELRX
PMEG150G10ELRX
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Produkt ist nicht verfügbar
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BC857CW/DG/B4F BC856W_BC857W_BC858W.pdf
BC857CW/DG/B4F
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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PMEG060V030EPDZ PMEG060V030EPD.pdf
PMEG060V030EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.36 EUR
Mindestbestellmenge: 1500
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PMEG060V030EPDZ PMEG060V030EPD.pdf
PMEG060V030EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 13
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BUK7909-75ATE127 BUK7909-75ATE.pdf
BUK7909-75ATE127
Hersteller: Nexperia USA Inc.
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BUK7909-75ATE,127 BUK7909-75ATE.pdf
BUK7909-75ATE,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7909-75AIE,127 BUK7909-75AIE.pdf
BUK7909-75AIE,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ20B,115 PDZ-B_SER.pdf
PDZ20B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 20V 400MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
auf Bestellung 2902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.2 EUR
122+0.14 EUR
141+0.13 EUR
Mindestbestellmenge: 53
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PTVS12VS1UR/8X PTVSXS1UR_SER.pdf
PTVS12VS1UR/8X
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMV52ENEAR PMV52ENEA.pdf
PMV52ENEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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PMV52ENEAR PMV52ENEA.pdf
PMV52ENEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
38+0.48 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
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NHDTC143ZUF NHDTC123JU_143ZU_114YU_SER.pdf
NHDTC143ZUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.059 EUR
Mindestbestellmenge: 10000
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NHDTC143ZUF NHDTC123JU_143ZU_114YU_SER.pdf
NHDTC143ZUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 18994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
82+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.086 EUR
2000+0.076 EUR
5000+0.065 EUR
Mindestbestellmenge: 50
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NHDTC143ZTR NHDTC123JT_143ZT_114YT_SER.pdf
NHDTC143ZTR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.066 EUR
6000+0.059 EUR
Mindestbestellmenge: 3000
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NHDTC143ZTR NHDTC123JT_143ZT_114YT_SER.pdf
NHDTC143ZTR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
88+0.2 EUR
142+0.12 EUR
500+0.091 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
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NHDTC143ZUX NHDTC123JU_143ZU_114YU_SER.pdf
NHDTC143ZUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.069 EUR
6000+0.061 EUR
9000+0.058 EUR
Mindestbestellmenge: 3000
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NHDTC143ZUX NHDTC123JU_143ZU_114YU_SER.pdf
NHDTC143ZUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 15150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.094 EUR
1000+0.083 EUR
Mindestbestellmenge: 53
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BUK7S1R5-40HJ BUK7S1R5-40H.pdf
BUK7S1R5-40HJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 260A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7S1R5-40HJ BUK7S1R5-40H.pdf
BUK7S1R5-40HJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 260A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
Mindestbestellmenge: 8
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BUK7S0R9-40HJ BUK7S0R9-40H.pdf
BUK7S0R9-40HJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7S0R9-40HJ BUK7S0R9-40H.pdf
BUK7S0R9-40HJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PSMNR90-40SSHJ PSMNR90-40SSH.pdf
PSMNR90-40SSHJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Produkt ist nicht verfügbar
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PSMNR90-40SSHJ PSMNR90-40SSH.pdf
PSMNR90-40SSHJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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PSMNR70-40SSHJ PSMNR70-40SSH.pdf
PSMNR70-40SSHJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
auf Bestellung 4931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
10+5.15 EUR
100+4.17 EUR
500+3.92 EUR
1000+3.79 EUR
Mindestbestellmenge: 3
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PTVS7V0S1UR,115 PTVSXS1UR_SER.pdf
PTVS7V0S1UR,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 7VWM 12VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
29+0.62 EUR
50+0.45 EUR
100+0.4 EUR
Mindestbestellmenge: 18
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74LVT16374ADGG,118 74LVT_LVTH16374A.pdf
74LVT16374ADGG,118
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 120 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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74LVT16374ADGG,118 74LVT_LVTH16374A.pdf
74LVT16374ADGG,118
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 120 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
14+1.31 EUR
50+1.11 EUR
100+1.04 EUR
Mindestbestellmenge: 10
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BZX84-A75215 BZX84_SER.pdf
BZX84-A75215
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA ZENER DIODE, 75V, 1
Produkt ist nicht verfügbar
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BCP56T,115 BCP56T_SER.pdf
BCP56T,115
Hersteller: Nexperia USA Inc.
Description: 1A, 80V, NPN, SILICON
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BAT46GW,118 BAT46GW.pdf
BAT46GW,118
Hersteller: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.25A
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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74LVC273BQ,115 74LVC273.pdf
74LVC273BQ,115
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 230 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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74LVC273BQ,115 74LVC273.pdf
74LVC273BQ,115
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 230 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
30+0.6 EUR
33+0.54 EUR
100+0.47 EUR
250+0.43 EUR
500+0.41 EUR
Mindestbestellmenge: 21
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PMEG060V050EPD,139 PMEG060V050EPD.pdf
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PMEG060V050EPD
Produkt ist nicht verfügbar
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PMEG045V150EPD,139 PMEG045V150EPD.pdf
PMEG045V150EPD,139
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PMEG045V150EPD
Packaging: Bulk
Part Status: Active
auf Bestellung 2810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
838+0.63 EUR
Mindestbestellmenge: 838
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LD6816CX4/C13P,315 PHGLS25656-1.pdf?t.download=true&u=5oefqw
LD6816CX4/C13P,315
Hersteller: Nexperia USA Inc.
Description: IC REG LINEAR 1.3V 150MA 4-WLCSP
Packaging: Bulk
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Part Status: Active
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1299+0.35 EUR
Mindestbestellmenge: 1299
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74LVCH8T245BQ118 74LVC_LVCH8T245.pdf
74LVCH8T245BQ118
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN
Produkt ist nicht verfügbar
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BUK661R9-40C,118 BUK661R9-40C.pdf
BUK661R9-40C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK661R9-40C,118 BUK661R9-40C.pdf
BUK661R9-40C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
10+4.11 EUR
100+3.02 EUR
Mindestbestellmenge: 3
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BUK9Y1R9-40H,115 BUK9Y1R9-40H.pdf
BUK9Y1R9-40H,115
Hersteller: Nexperia USA Inc.
Description: POWER FIELD-EFFECT TRANSISTOR
Produkt ist nicht verfügbar
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NHDTA114YTR NHDTA123JT_143ZT_114YT_SER.pdf
NHDTA114YTR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NHDTA114YUX NHDTA123JU_143ZU_114YU_SER.pdf
NHDTA114YUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 25489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
86+0.21 EUR
139+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
Mindestbestellmenge: 53
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BCP56H,115 BCP56H_SER.pdf
BCP56H,115
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.2 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC857BQBZ BC857XQB_SER.pdf
BC857BQBZ
Hersteller: Nexperia USA Inc.
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Produkt ist nicht verfügbar
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BC857BQBZ BC857XQB_SER.pdf
BC857BQBZ
Hersteller: Nexperia USA Inc.
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Produkt ist nicht verfügbar
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BZT52-C5V1,115 BZT52_SER.pdf
BZT52-C5V1,115
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE, 5.1V, 4.99%, 0.41W,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BCP56-10T,115 BCP56T_SER.pdf
BCP56-10T,115
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
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LSF0102GXX LSF0102.pdf
LSF0102GXX
Hersteller: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 8X2SON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 5494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
31+0.58 EUR
35+0.52 EUR
100+0.45 EUR
250+0.42 EUR
500+0.4 EUR
1000+0.38 EUR
2500+0.36 EUR
5000+0.35 EUR
Mindestbestellmenge: 22
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LSF0102DCH LSF0102.pdf
LSF0102DCH
Hersteller: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 8-VSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
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