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74LVC2G07GW-Q100 125 Nexperia USA Inc. 74LVC2G07_Q100.pdf Description: BUFFER, LVC/LCX/Z SERIES
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PDTC123TU115 PDTC123TU115 Nexperia USA Inc. PDTC123T_SER.pdf Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
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74LV4052D,118 74LV4052D,118 Nexperia USA Inc. 74LV4052.pdf Description: IC SWITCH SP4T X 2 85OHM 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 85Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 1V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 46ns, 32ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 2µA
Part Status: Active
Number of Circuits: 2
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PBSS4021PT,215 PBSS4021PT,215 Nexperia USA Inc. PBSS4021PT.pdf Description: TRANS PNP 20V 3.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V
Frequency - Transition: 155MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.1 W
Qualification: AEC-Q100
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NHUMH10F NHUMH10F Nexperia USA Inc. Description: NHUMH10/SOT363/SC-88
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BZT52-C10115 BZT52-C10115 Nexperia USA Inc. BZT52_SER.pdf Description: NOW NEXPERIA BZT52-C10 - SINGLE
Packaging: Bulk
Part Status: Active
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BZT52-C10,118 BZT52-C10,118 Nexperia USA Inc. NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw Description: ZENER DIODE
Packaging: Bulk
Part Status: Active
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BZT52-C10,115 BZT52-C10,115 Nexperia USA Inc. BZT52_SER.pdf Description: ZENER DIODE, 10V, 5%, 0.41W, SIL
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Part Status: Active
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BZT52-C3V6,118 BZT52-C3V6,118 Nexperia USA Inc. NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw Description: BZT52-C3V6 - ZENER DIODE IN A SO
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Part Status: Active
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BZT52-C3V6,115 BZT52-C3V6,115 Nexperia USA Inc. NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw Description: ZENER DIODE
Packaging: Bulk
Part Status: Active
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PMCM4402UPEZ PMCM4402UPEZ Nexperia USA Inc. PMCM4402UPE.pdf Description: MOSFET P-CH 20V 4WLCSP
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Power Dissipation (Max): 400mW
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
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74AUP1G02GN,132 74AUP1G02GN,132 Nexperia USA Inc. 74AUP1G02.pdf Description: IC GATE NOR 1CH 2-INP 6XSON
Current - Quiescent (Max): 500 nA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 6-XSON (0.9x1)
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
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NXB0108PWJ NXB0108PWJ Nexperia USA Inc. NXB0108.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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NXB0108PWJ NXB0108PWJ Nexperia USA Inc. NXB0108.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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NXS0108PWJ NXS0108PWJ Nexperia USA Inc. NXS0108.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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NXS0108PWJ NXS0108PWJ Nexperia USA Inc. NXS0108.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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NXS0108PW-Q100J NXS0108PW-Q100J Nexperia USA Inc. NXS0108_Q100.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q100
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NXS0108PW-Q100J NXS0108PW-Q100J Nexperia USA Inc. NXS0108_Q100.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q100
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NXB0108PW-Q100J NXB0108PW-Q100J Nexperia USA Inc. NXB0108_Q100.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q100
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NXB0108PW-Q100J NXB0108PW-Q100J Nexperia USA Inc. NXB0108_Q100.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q100
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NHDTA143ZTR NHDTA143ZTR Nexperia USA Inc. NHDTA123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS PNP 80V TO236AB
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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NHDTA143ZTR NHDTA143ZTR Nexperia USA Inc. NHDTA123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS PNP 80V TO236AB
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NHDTA143ZUX NHDTA143ZUX Nexperia USA Inc. NHDTA123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS PNP 80V SOT323
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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NHDTA143ZUX NHDTA143ZUX Nexperia USA Inc. NHDTA123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS PNP 80V SOT323
Resistors Included: R1 and R2
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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NHDTA143ZUF NHDTA143ZUF Nexperia USA Inc. NHDTA123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS PNP 80V SOT323
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Produkt ist nicht verfügbar
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NHDTA143ZUF NHDTA143ZUF Nexperia USA Inc. NHDTA123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS PNP 80V SOT323
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Frequency - Transition: 150 MHz
Power - Max: 235 mW
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BC52-10PASX BC52-10PASX Nexperia USA Inc. BC52XPAS_SER.pdf Description: TRANS PNP 60V 1A DFN2020D-3
Supplier Device Package: DFN2020D-3
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Bulk
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
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BC52-16PAS,115 BC52-16PAS,115 Nexperia USA Inc. NEXP-S-A0002912151-1.pdf?t.download=true&u=5oefqw Description: NOW NEXPERIA BC52-16PA - SMALL S
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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74AUP1G06GW,125 74AUP1G06GW,125 Nexperia USA Inc. 74AUP1G06.pdf Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G06GW,125 74AUP1G06GW,125 Nexperia USA Inc. 74AUP1G06.pdf Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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118+0.18 EUR
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TLVH431NACDBZRVL TLVH431NACDBZRVL Nexperia USA Inc. TLVH431N_FAM.pdf Description: IC VREF SHUNT ADJ 1.5% TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 70 mA
Voltage - Output (Max): 14 V
Grade: Automotive
Qualification: AEC-Q100
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TLVH431NACDBZRR TLVH431NACDBZRR Nexperia USA Inc. TLVH431N_FAM.pdf Description: IC VREF SHUNT ADJ 1.5% TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 70 mA
Voltage - Output (Max): 14 V
Grade: Automotive
Qualification: AEC-Q100
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MMBZ27VCL,215 MMBZ27VCL,215 Nexperia USA Inc. MMBZ27VCL.pdf Description: TVS DIODE 22VWM 38VC TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 48pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NCR420ZX NCR420ZX Nexperia USA Inc. NCR420Z_NCR421Z.pdf Description: IC LED DRVR LIN PWM 150MA SOT223
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Operating Temperature: -55°C ~ 150°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Part Status: Active
Voltage - Supply (Max): 40V
Dimming: PWM
Supplier Device Package: SOT-223
Topology: Linear
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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NCR420ZX NCR420ZX Nexperia USA Inc. NCR420Z_NCR421Z.pdf Description: IC LED DRVR LIN PWM 150MA SOT223
Dimming: PWM
Supplier Device Package: SOT-223
Topology: Linear
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Operating Temperature: -55°C ~ 150°C (TA)
Type: Linear
Voltage - Output: 40V
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Voltage - Supply (Max): 40V
Qualification: AEC-Q101
Grade: Automotive
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NHUMD12F NHUMD12F Nexperia USA Inc. NHUMD3_2_12_SER.pdf Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 100nA
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
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PMV30ENEAR PMV30ENEAR Nexperia USA Inc. PMV30ENEA.pdf Description: MOSFET N-CH 40V 4.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
Qualification: AEC-Q101
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PDTA113EU Nexperia USA Inc. PHGLS19170-1.pdf?t.download=true&u=5oefqw Description: PDTA113E SERIES - PNP RESISTOR-E
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PMH950UPEH PMH950UPEH Nexperia USA Inc. PMH950UPE.pdf Description: MOSFET P-CH 20V 530MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
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PMH950UPEH PMH950UPEH Nexperia USA Inc. PMH950UPE.pdf Description: MOSFET P-CH 20V 530MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
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PMH550UPEH PMH550UPEH Nexperia USA Inc. PMH550UPE.pdf Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
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PMH550UPEH PMH550UPEH Nexperia USA Inc. PMH550UPE.pdf Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
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PMZB950UPELYL PMZB950UPELYL Nexperia USA Inc. PMZB950UPEL.pdf Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
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PMZ350UPEYL PMZ350UPEYL Nexperia USA Inc. PMZ350UPE.pdf Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
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PMEG150G20ELRX PMEG150G20ELRX Nexperia USA Inc. Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
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NXS0108BQX NXS0108BQX Nexperia USA Inc. NXS0108.pdf Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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XS3A1T5157GSH XS3A1T5157GSH Nexperia USA Inc. XS3A1T5157.pdf Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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XS3A1T5157GSH XS3A1T5157GSH Nexperia USA Inc. XS3A1T5157.pdf Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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74LVC1G3157GW-Q100,125 74LVC1G3157GW-Q100,125 Nexperia USA Inc. 74LVC1G3157_Q100.pdf Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
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74LVC1G3157GW-Q100125 Nexperia USA Inc. 74LVC1G3157_Q100.pdf Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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PMEG150G10ELRX PMEG150G10ELRX Nexperia USA Inc. Description: DIODE SIGE 150V 1A SOD123W
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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BC857CW/DG/B4F BC857CW/DG/B4F Nexperia USA Inc. BC856W_BC857W_BC858W.pdf Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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PMEG060V030EPDZ PMEG060V030EPDZ Nexperia USA Inc. PMEG060V030EPD.pdf Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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PMEG060V030EPDZ PMEG060V030EPDZ Nexperia USA Inc. PMEG060V030EPD.pdf Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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BUK7909-75ATE127 BUK7909-75ATE127 Nexperia USA Inc. BUK7909-75ATE.pdf Description: N-CHANNEL POWER MOSFET
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BUK7909-75ATE,127 BUK7909-75ATE,127 Nexperia USA Inc. BUK7909-75ATE.pdf Description: MOSFET N-CH 75V 75A TO220-5
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
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BUK7909-75AIE,127 BUK7909-75AIE,127 Nexperia USA Inc. BUK7909-75AIE.pdf Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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PDZ20B,115 PDZ20B,115 Nexperia USA Inc. PDZ-B_SER.pdf Description: DIODE ZENER 20V 400MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
auf Bestellung 2902 Stücke:
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87+0.24 EUR
122+0.17 EUR
141+0.15 EUR
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PTVS12VS1UR/8X PTVS12VS1UR/8X Nexperia USA Inc. PTVSXS1UR_SER.pdf Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMV52ENEAR PMV52ENEAR Nexperia USA Inc. PMV52ENEA.pdf Description: MOSFET N-CH 30V 3.2A TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
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74LVC2G07GW-Q100 125 74LVC2G07_Q100.pdf
Hersteller: Nexperia USA Inc.
Description: BUFFER, LVC/LCX/Z SERIES
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PDTC123TU115 PDTC123T_SER.pdf
PDTC123TU115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
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15000+0.039 EUR
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74LV4052D,118 74LV4052.pdf
74LV4052D,118
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SP4T X 2 85OHM 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 85Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 1V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 46ns, 32ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 2µA
Part Status: Active
Number of Circuits: 2
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36+0.58 EUR
51+0.42 EUR
57+0.37 EUR
100+0.32 EUR
250+0.3 EUR
500+0.27 EUR
1000+0.26 EUR
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PBSS4021PT,215 PBSS4021PT.pdf
PBSS4021PT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 3.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V
Frequency - Transition: 155MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.1 W
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NHUMH10F
NHUMH10F
Hersteller: Nexperia USA Inc.
Description: NHUMH10/SOT363/SC-88
auf Bestellung 10000 Stücke:
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BZT52-C10115 BZT52_SER.pdf
BZT52-C10115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA BZT52-C10 - SINGLE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZT52-C10,118 NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw
BZT52-C10,118
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZT52-C10,115 BZT52_SER.pdf
BZT52-C10,115
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE, 10V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZT52-C3V6,118 NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw
BZT52-C3V6,118
Hersteller: Nexperia USA Inc.
Description: BZT52-C3V6 - ZENER DIODE IN A SO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZT52-C3V6,115 NEXP-S-A0003514697-1.pdf?t.download=true&u=5oefqw
BZT52-C3V6,115
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PMCM4402UPEZ PMCM4402UPE.pdf
PMCM4402UPEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4WLCSP
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Power Dissipation (Max): 400mW
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74AUP1G02GN,132 74AUP1G02.pdf
74AUP1G02GN,132
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 1CH 2-INP 6XSON
Current - Quiescent (Max): 500 nA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 6-XSON (0.9x1)
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NXB0108PWJ NXB0108.pdf
NXB0108PWJ
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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NXB0108PWJ NXB0108.pdf
NXB0108PWJ
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 84 Stücke:
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14+1.52 EUR
20+1.09 EUR
25+0.99 EUR
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NXS0108PWJ NXS0108.pdf
NXS0108PWJ
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.71 EUR
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NXS0108PWJ NXS0108.pdf
NXS0108PWJ
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
20+1.09 EUR
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100+0.87 EUR
250+0.81 EUR
500+0.77 EUR
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NXS0108PW-Q100J NXS0108_Q100.pdf
NXS0108PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.84 EUR
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NXS0108PW-Q100J NXS0108_Q100.pdf
NXS0108PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.78 EUR
17+1.29 EUR
25+1.15 EUR
100+1.01 EUR
250+0.95 EUR
500+0.92 EUR
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NXB0108PW-Q100J NXB0108_Q100.pdf
NXB0108PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.83 EUR
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NXB0108PW-Q100J NXB0108_Q100.pdf
NXB0108PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2686 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
17+1.26 EUR
25+1.14 EUR
100+1 EUR
250+0.94 EUR
500+0.9 EUR
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NHDTA143ZTR NHDTA123JT_143ZT_114YT_SER.pdf
NHDTA143ZTR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V TO236AB
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 66000 Stücke:
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3000+0.089 EUR
6000+0.08 EUR
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NHDTA143ZTR NHDTA123JT_143ZT_114YT_SER.pdf
NHDTA143ZTR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V TO236AB
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 70276 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
77+0.27 EUR
108+0.19 EUR
124+0.17 EUR
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NHDTA143ZUX NHDTA123JU_143ZU_114YU_SER.pdf
NHDTA143ZUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NHDTA143ZUX NHDTA123JU_143ZU_114YU_SER.pdf
NHDTA143ZUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Resistors Included: R1 and R2
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 4517 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
72+0.29 EUR
102+0.2 EUR
117+0.18 EUR
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NHDTA143ZUF NHDTA123JU_143ZU_114YU_SER.pdf
NHDTA143ZUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Produkt ist nicht verfügbar
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NHDTA143ZUF NHDTA123JU_143ZU_114YU_SER.pdf
NHDTA143ZUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Frequency - Transition: 150 MHz
Power - Max: 235 mW
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BC52-10PASX BC52XPAS_SER.pdf
BC52-10PASX
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1A DFN2020D-3
Supplier Device Package: DFN2020D-3
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Bulk
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
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BC52-16PAS,115 NEXP-S-A0002912151-1.pdf?t.download=true&u=5oefqw
BC52-16PAS,115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA BC52-16PA - SMALL S
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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74AUP1G06GW,125 74AUP1G06.pdf
74AUP1G06GW,125
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74AUP1G06GW,125 74AUP1G06.pdf
74AUP1G06GW,125
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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TLVH431NACDBZRVL TLVH431N_FAM.pdf
TLVH431NACDBZRVL
Hersteller: Nexperia USA Inc.
Description: IC VREF SHUNT ADJ 1.5% TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 70 mA
Voltage - Output (Max): 14 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLVH431NACDBZRR TLVH431N_FAM.pdf
TLVH431NACDBZRR
Hersteller: Nexperia USA Inc.
Description: IC VREF SHUNT ADJ 1.5% TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 70 mA
Voltage - Output (Max): 14 V
Grade: Automotive
Qualification: AEC-Q100
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MMBZ27VCL,215 MMBZ27VCL.pdf
MMBZ27VCL,215
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 22VWM 38VC TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 48pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NCR420ZX NCR420Z_NCR421Z.pdf
NCR420ZX
Hersteller: Nexperia USA Inc.
Description: IC LED DRVR LIN PWM 150MA SOT223
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Operating Temperature: -55°C ~ 150°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Part Status: Active
Voltage - Supply (Max): 40V
Dimming: PWM
Supplier Device Package: SOT-223
Topology: Linear
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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NCR420ZX NCR420Z_NCR421Z.pdf
NCR420ZX
Hersteller: Nexperia USA Inc.
Description: IC LED DRVR LIN PWM 150MA SOT223
Dimming: PWM
Supplier Device Package: SOT-223
Topology: Linear
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Operating Temperature: -55°C ~ 150°C (TA)
Type: Linear
Voltage - Output: 40V
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Voltage - Supply (Max): 40V
Qualification: AEC-Q101
Grade: Automotive
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NHUMD12F NHUMD3_2_12_SER.pdf
NHUMD12F
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 100nA
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
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PMV30ENEAR PMV30ENEA.pdf
PMV30ENEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 4.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
Qualification: AEC-Q101
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PDTA113EU PHGLS19170-1.pdf?t.download=true&u=5oefqw
Hersteller: Nexperia USA Inc.
Description: PDTA113E SERIES - PNP RESISTOR-E
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PMH950UPEH PMH950UPE.pdf
PMH950UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 530MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
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PMH950UPEH PMH950UPE.pdf
PMH950UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 530MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
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PMH550UPEH PMH550UPE.pdf
PMH550UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
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PMH550UPEH PMH550UPE.pdf
PMH550UPEH
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
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PMZB950UPELYL PMZB950UPEL.pdf
PMZB950UPELYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
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PMZ350UPEYL PMZ350UPE.pdf
PMZ350UPEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
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PMEG150G20ELRX
PMEG150G20ELRX
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
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NXS0108BQX NXS0108.pdf
NXS0108BQX
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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XS3A1T5157GSH XS3A1T5157.pdf
XS3A1T5157GSH
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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XS3A1T5157GSH XS3A1T5157.pdf
XS3A1T5157GSH
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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74LVC1G3157GW-Q100,125 74LVC1G3157_Q100.pdf
74LVC1G3157GW-Q100,125
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
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74LVC1G3157GW-Q100125 74LVC1G3157_Q100.pdf
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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PMEG150G10ELRX
PMEG150G10ELRX
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BC857CW/DG/B4F BC856W_BC857W_BC858W.pdf
BC857CW/DG/B4F
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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PMEG060V030EPDZ PMEG060V030EPD.pdf
PMEG060V030EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG060V030EPDZ PMEG060V030EPD.pdf
PMEG060V030EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.59 EUR
22+1 EUR
100+0.64 EUR
500+0.49 EUR
Mindestbestellmenge: 14 Stücke
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BUK7909-75ATE127 BUK7909-75ATE.pdf
BUK7909-75ATE127
Hersteller: Nexperia USA Inc.
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BUK7909-75ATE,127 BUK7909-75ATE.pdf
BUK7909-75ATE,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Produkt ist nicht verfügbar
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BUK7909-75AIE,127 BUK7909-75AIE.pdf
BUK7909-75AIE,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ20B,115 PDZ-B_SER.pdf
PDZ20B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 20V 400MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
auf Bestellung 2902 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
87+0.24 EUR
122+0.17 EUR
141+0.15 EUR
Mindestbestellmenge: 53 Stücke
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PTVS12VS1UR/8X PTVSXS1UR_SER.pdf
PTVS12VS1UR/8X
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PMV52ENEAR PMV52ENEA.pdf
PMV52ENEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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