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PXP011-20QXJ PXP011-20QXJ Nexperia USA Inc. PXP011-20QX.pdf Description: PXP011-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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30+0.73 EUR
33+0.64 EUR
100+0.56 EUR
250+0.52 EUR
500+0.5 EUR
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LD6805K/36H,115 LD6805K/36H,115 Nexperia USA Inc. LD6805.pdf Description: IC REG LIN 3.6V 150MA DFN1010C-4
Supplier Device Package: DFN1010C-4
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 35 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Bulk
Current - Supply (Max): 150 µA
Protection Features: Over Current, Transient Voltage
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
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BC856AQC-QZ BC856AQC-QZ Nexperia USA Inc. BC856XQC-Q_SER.pdf Description: TRANS PNP 65V 0.1A DFN1412D-3
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
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BC856AQCZ BC856AQCZ Nexperia USA Inc. BC856XQC_SER.pdf Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
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BC856AQCZ BC856AQCZ Nexperia USA Inc. BC856XQC_SER.pdf Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
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74AHCT1G79GW125 Nexperia USA Inc. 74AHC_AHCT1G79.pdf Description: NOW NEXPERIA 74AHCT1G79GW-Q100 -
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74AUP1G80GF132 74AUP1G80GF132 Nexperia USA Inc. 74AUP1G80.pdf Description: IC FF D-TYPE SNGL 1BIT 6XSON
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74LVC1G80GM,115 74LVC1G80GM,115 Nexperia USA Inc. PHGLS25117-1.pdf?t.download=true&u=5oefqw Description: IC FF D-TYPE SINGLE 1BIT 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 200 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 400 MHz
Input Capacitance: 5 pF
Supplier Device Package: 6-XSON (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
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BC856BQCZ BC856BQCZ Nexperia USA Inc. BC856XQC_SER.pdf Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
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BC856BQCZ BC856BQCZ Nexperia USA Inc. BC856XQC_SER.pdf Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
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BC856BQC-QZ BC856BQC-QZ Nexperia USA Inc. BC856XQC-Q_SER.pdf Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
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BC856BQC-QZ BC856BQC-QZ Nexperia USA Inc. BC856XQC-Q_SER.pdf Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
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PZU7.5B,115 PZU7.5B,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
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PZU7.5B,115 PZU7.5B,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 7.5V 310MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q100
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PMEG4005ESF315 PMEG4005ESF315 Nexperia USA Inc. PMEG4005ESF.pdf Description: NEXPERIA PMEG4005ESF - RECTIFIER
Part Status: Active
Packaging: Bulk
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PMEG4005EGW,115 PMEG4005EGW,115 Nexperia USA Inc. PMEG4005EGW.pdf Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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PMEG4005EH/6X PMEG4005EH/6X Nexperia USA Inc. PMEG4005EH.pdf Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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PSMN1R5-50YLHX PSMN1R5-50YLHX Nexperia USA Inc. PSMN1R5-50YLH.pdf Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
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PSMN1R5-50YLHX PSMN1R5-50YLHX Nexperia USA Inc. PSMN1R5-50YLH.pdf Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
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PSMN1R2-55SLHAX PSMN1R2-55SLHAX Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
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PSMN1R2-55SLHAX PSMN1R2-55SLHAX Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
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PSMN1R2-55SLH PSMN1R2-55SLH Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
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PSMN1R2-55SLH PSMN1R2-55SLH Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
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PSMN1R2-25YLD,115 PSMN1R2-25YLD,115 Nexperia USA Inc. Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
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PSMN1R7-25YLD115 Nexperia USA Inc. NEXP-S-A0003107878-1.pdf?t.download=true&u=5oefqw Description: NOW NEXPERIA PSMN1R7-25YLD - POW
Packaging: Bulk
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PSMN1R1-30EL,127 PSMN1R1-30EL,127 Nexperia USA Inc. PSMN1R1-30EL.pdf Description: MOSFET N-CH 30V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
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74HCT10DB,112 74HCT10DB,112 Nexperia USA Inc. PHGL-S-A0002307496-1.pdf?t.download=true&u=5oefqw Description: IC GATE NAND
Packaging: Bulk
Part Status: Active
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74HCT10DB,112 74HCT10DB,112 Nexperia USA Inc. PHGL-S-A0002307496-1.pdf?t.download=true&u=5oefqw Description: IC GATE NAND
Packaging: Bulk
Part Status: Active
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PXP6R1-30QLJ PXP6R1-30QLJ Nexperia USA Inc. PXP6R1-30QL.pdf Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
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PXP6R1-30QLJ PXP6R1-30QLJ Nexperia USA Inc. PXP6R1-30QL.pdf Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
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74AHCT1G125GF,132 74AHCT1G125GF,132 Nexperia USA Inc. 74AHC_AHCT1G125.pdf Description: IC BUFF 4.5V/5.5V 6-XSON, SOT891
Output Type: 3-State
Package / Case: 6-XFDFN
Number of Elements: 1
Mounting Type: Surface Mount
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
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74HC20PW118 74HC20PW118 Nexperia USA Inc. Description: IC GATE NAND 2CH 4-INP 14TSSOP
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PUMT1 PUMT1 Nexperia USA Inc. PHGLS19727-1.pdf?t.download=true&u=5oefqw Description: PUMT1 - PNP GENERAL PURPOSE DOUB
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PXN5R4-30QLJ PXN5R4-30QLJ Nexperia USA Inc. PXN5R4-30QL.pdf Description: PXN5R4-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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PXN5R4-30QLJ PXN5R4-30QLJ Nexperia USA Inc. PXN5R4-30QL.pdf Description: PXN5R4-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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BZX58550-C62-QX BZX58550-C62-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: BZX58550-C62-Q/SOD523/SC-79
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BZX58550-C62-QX BZX58550-C62-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: BZX58550-C62-Q/SOD523/SC-79
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BCV28,115 BCV28,115 Nexperia USA Inc. BCV28.pdf Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Qualification: AEC-Q101
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BCV28,115 BCV28,115 Nexperia USA Inc. BCV28.pdf Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Qualification: AEC-Q101
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74LVC1G08GF/S500,1 74LVC1G08GF/S500,1 Nexperia USA Inc. PHGLS25110-1.pdf?t.download=true&u=5oefqw Description: IC AND SNGL 2-INP
Packaging: Bulk
Part Status: Active
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74LVC1G08GM,115 74LVC1G08GM,115 Nexperia USA Inc. 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
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LD6805K/12H,115 LD6805K/12H,115 Nexperia USA Inc. LD6805.pdf Description: IC REG LIN 1.2V 150MA DFN1010C-4
Current - Supply (Max): 150 µA
Protection Features: Over Current, Transient Voltage
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: DFN1010C-4
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 35 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Bulk
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PESD3USB30Z PESD3USB30Z Nexperia USA Inc. PESDxUSB30.pdf Description: TVS DIODE 5.5VWM 15WLCSP
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PESD3USB3S/CZ Nexperia USA Inc. PESDXUSB3S_SER.pdf Description: TVS DIODE 5VWM 15WLCSP
Supplier Device Package: 15-WLCSP (2.37x1.17)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 15-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 3
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PESD2USB3S/CZ PESD2USB3S/CZ Nexperia USA Inc. PESDXUSB3S_SER.pdf Description: TVS DIODE 5VWM 10WLCSP
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: 10-WLCSP (1.57x1.17)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Produkt ist nicht verfügbar
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PESD1USB3S/CZ PESD1USB3S/CZ Nexperia USA Inc. PESDXUSB3S_SER.pdf Description: TVS DIODE 5VWM 5WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: 5-WLCSP (0.77x1.17)
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Produkt ist nicht verfügbar
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BZB84-B47,215 BZB84-B47,215 Nexperia USA Inc. PHGLS18928-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER ARRAY 47V SOT-23
Tolerance: ±2%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
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BZB84-C4V3,215 BZB84-C4V3,215 Nexperia USA Inc. PHGLS18928-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER ARRAY 4.3V SOT-23
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
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BZB84-B30,215 BZB84-B30,215 Nexperia USA Inc. PHGLS18928-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER ARRAY 30V TO-236AB
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Bulk
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PDTA143ZQCZ PDTA143ZQCZ Nexperia USA Inc. PDTA143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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PDTA143XQC-QZ PDTA143XQC-QZ Nexperia USA Inc. PDTA143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTA143XQC-QZ PDTA143XQC-QZ Nexperia USA Inc. PDTA143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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1000+0.1 EUR
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PDTA143EQB-QZ PDTA143EQB-QZ Nexperia USA Inc. PDTA143_114_124_144EQB-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTA143EQB-QZ PDTA143EQB-QZ Nexperia USA Inc. PDTA143_114_124_144EQB-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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500+0.12 EUR
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PDTA143ZQC-QZ PDTA143ZQC-QZ Nexperia USA Inc. PDTA143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
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5000+0.075 EUR
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PDTA143ZQC-QZ PDTA143ZQC-QZ Nexperia USA Inc. PDTA143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
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50+0.42 EUR
82+0.25 EUR
133+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.09 EUR
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PDTA143EQC-QZ PDTA143EQC-QZ Nexperia USA Inc. PDTA143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTA143EQC-QZ PDTA143EQC-QZ Nexperia USA Inc. PDTA143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
82+0.25 EUR
133+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.09 EUR
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PDTA143XQCZ PDTA143XQCZ Nexperia USA Inc. PDTA143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.075 EUR
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PDTA143XQCZ PDTA143XQCZ Nexperia USA Inc. PDTA143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
86+0.25 EUR
138+0.15 EUR
500+0.11 EUR
1000+0.099 EUR
2000+0.087 EUR
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PXP011-20QXJ PXP011-20QX.pdf
PXP011-20QXJ
Hersteller: Nexperia USA Inc.
Description: PXP011-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2410 Stücke:
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AnzahlPrivatkunde
21+1.02 EUR
30+0.73 EUR
33+0.64 EUR
100+0.56 EUR
250+0.52 EUR
500+0.5 EUR
1000+0.48 EUR
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LD6805K/36H,115 LD6805.pdf
LD6805K/36H,115
Hersteller: Nexperia USA Inc.
Description: IC REG LIN 3.6V 150MA DFN1010C-4
Supplier Device Package: DFN1010C-4
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 35 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Bulk
Current - Supply (Max): 150 µA
Protection Features: Over Current, Transient Voltage
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.6V
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1068+0.51 EUR
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BC856AQC-QZ BC856XQC-Q_SER.pdf
BC856AQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Produkt ist nicht verfügbar
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BC856AQCZ BC856XQC_SER.pdf
BC856AQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BC856AQCZ BC856XQC_SER.pdf
BC856AQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
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74AHCT1G79GW125 74AHC_AHCT1G79.pdf
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74AHCT1G79GW-Q100 -
Produkt ist nicht verfügbar
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74AUP1G80GF132 74AUP1G80.pdf
74AUP1G80GF132
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Produkt ist nicht verfügbar
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74LVC1G80GM,115 PHGLS25117-1.pdf?t.download=true&u=5oefqw
74LVC1G80GM,115
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1BIT 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 200 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 400 MHz
Input Capacitance: 5 pF
Supplier Device Package: 6-XSON (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 159792 Stücke:
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1462+0.37 EUR
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BC856BQCZ BC856XQC_SER.pdf
BC856BQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BC856BQCZ BC856XQC_SER.pdf
BC856BQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
auf Bestellung 2185 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
138+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
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BC856BQC-QZ BC856XQC-Q_SER.pdf
BC856BQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC856BQC-QZ BC856XQC-Q_SER.pdf
BC856BQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
84+0.25 EUR
135+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
2000+0.089 EUR
Mindestbestellmenge: 53 Stücke
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PZU7.5B,115 PZUXB_SER.pdf
PZU7.5B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PZU7.5B,115 PZUXB_SER.pdf
PZU7.5B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
71+0.3 EUR
114+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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PMEG4005ESF315 PMEG4005ESF.pdf
PMEG4005ESF315
Hersteller: Nexperia USA Inc.
Description: NEXPERIA PMEG4005ESF - RECTIFIER
Part Status: Active
Packaging: Bulk
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7969+0.08 EUR
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PMEG4005EGW,115 PMEG4005EGW.pdf
PMEG4005EGW,115
Hersteller: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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PMEG4005EH/6X PMEG4005EH.pdf
PMEG4005EH/6X
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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PSMN1R5-50YLHX PSMN1R5-50YLH.pdf
PSMN1R5-50YLHX
Hersteller: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Produkt ist nicht verfügbar
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PSMN1R5-50YLHX PSMN1R5-50YLH.pdf
PSMN1R5-50YLHX
Hersteller: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
auf Bestellung 2643 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.19 EUR
10+5.4 EUR
100+3.81 EUR
500+3.26 EUR
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PSMN1R2-55SLHAX PSMN1R2-55SLH.pdf
PSMN1R2-55SLHAX
Hersteller: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PSMN1R2-55SLHAX PSMN1R2-55SLH.pdf
PSMN1R2-55SLHAX
Hersteller: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PSMN1R2-55SLH PSMN1R2-55SLH.pdf
PSMN1R2-55SLH
Hersteller: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PSMN1R2-55SLH PSMN1R2-55SLH.pdf
PSMN1R2-55SLH
Hersteller: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
auf Bestellung 1975 Stücke:
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10+6.87 EUR
100+5.63 EUR
500+4.8 EUR
1000+4.05 EUR
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PSMN1R2-25YLD,115
PSMN1R2-25YLD,115
Hersteller: Nexperia USA Inc.
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Produkt ist nicht verfügbar
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PSMN1R7-25YLD115 NEXP-S-A0003107878-1.pdf?t.download=true&u=5oefqw
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PSMN1R7-25YLD - POW
Packaging: Bulk
Produkt ist nicht verfügbar
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PSMN1R1-30EL,127 PSMN1R1-30EL.pdf
PSMN1R1-30EL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
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74HCT10DB,112 PHGL-S-A0002307496-1.pdf?t.download=true&u=5oefqw
74HCT10DB,112
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND
Packaging: Bulk
Part Status: Active
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384+1.4 EUR
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74HCT10DB,112 PHGL-S-A0002307496-1.pdf?t.download=true&u=5oefqw
74HCT10DB,112
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND
Packaging: Bulk
Part Status: Active
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PXP6R1-30QLJ PXP6R1-30QL.pdf
PXP6R1-30QLJ
Hersteller: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Produkt ist nicht verfügbar
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PXP6R1-30QLJ PXP6R1-30QL.pdf
PXP6R1-30QLJ
Hersteller: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Produkt ist nicht verfügbar
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74AHCT1G125GF,132 74AHC_AHCT1G125.pdf
74AHCT1G125GF,132
Hersteller: Nexperia USA Inc.
Description: IC BUFF 4.5V/5.5V 6-XSON, SOT891
Output Type: 3-State
Package / Case: 6-XFDFN
Number of Elements: 1
Mounting Type: Surface Mount
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
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74HC20PW118
74HC20PW118
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14TSSOP
Produkt ist nicht verfügbar
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PUMT1 PHGLS19727-1.pdf?t.download=true&u=5oefqw
PUMT1
Hersteller: Nexperia USA Inc.
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
Produkt ist nicht verfügbar
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PXN5R4-30QLJ PXN5R4-30QL.pdf
PXN5R4-30QLJ
Hersteller: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
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3000+0.42 EUR
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PXN5R4-30QLJ PXN5R4-30QL.pdf
PXN5R4-30QLJ
Hersteller: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 32449 Stücke:
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24+0.88 EUR
28+0.76 EUR
100+0.54 EUR
500+0.44 EUR
1000+0.42 EUR
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BZX58550-C62-QX BZX58550-Q_SER.pdf
BZX58550-C62-QX
Hersteller: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Produkt ist nicht verfügbar
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BZX58550-C62-QX BZX58550-Q_SER.pdf
BZX58550-C62-QX
Hersteller: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Produkt ist nicht verfügbar
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BCV28,115 BCV28.pdf
BCV28,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCV28,115 BCV28.pdf
BCV28,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Qualification: AEC-Q101
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15+1.44 EUR
24+0.89 EUR
100+0.57 EUR
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74LVC1G08GF/S500,1 PHGLS25110-1.pdf?t.download=true&u=5oefqw
74LVC1G08GF/S500,1
Hersteller: Nexperia USA Inc.
Description: IC AND SNGL 2-INP
Packaging: Bulk
Part Status: Active
auf Bestellung 245000 Stücke:
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AnzahlPrivatkunde
720+0.8 EUR
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74LVC1G08GM,115 74LVC1G08.pdf
74LVC1G08GM,115
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
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72+0.3 EUR
102+0.2 EUR
116+0.18 EUR
136+0.15 EUR
250+0.14 EUR
500+0.13 EUR
2500+0.12 EUR
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LD6805K/12H,115 LD6805.pdf
LD6805K/12H,115
Hersteller: Nexperia USA Inc.
Description: IC REG LIN 1.2V 150MA DFN1010C-4
Current - Supply (Max): 150 µA
Protection Features: Over Current, Transient Voltage
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: DFN1010C-4
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 35 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Bulk
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1068+0.51 EUR
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PESD3USB30Z PESDxUSB30.pdf
PESD3USB30Z
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 15WLCSP
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1159+0.51 EUR
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PESD3USB3S/CZ PESDXUSB3S_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 15WLCSP
Supplier Device Package: 15-WLCSP (2.37x1.17)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 15-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 3
Produkt ist nicht verfügbar
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PESD2USB3S/CZ PESDXUSB3S_SER.pdf
PESD2USB3S/CZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 10WLCSP
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: 10-WLCSP (1.57x1.17)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Produkt ist nicht verfügbar
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PESD1USB3S/CZ PESDXUSB3S_SER.pdf
PESD1USB3S/CZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: 5-WLCSP (0.77x1.17)
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Produkt ist nicht verfügbar
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BZB84-B47,215 PHGLS18928-1.pdf?t.download=true&u=5oefqw
BZB84-B47,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 47V SOT-23
Tolerance: ±2%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
auf Bestellung 9273 Stücke:
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9273+0.058 EUR
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BZB84-C4V3,215 PHGLS18928-1.pdf?t.download=true&u=5oefqw
BZB84-C4V3,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 4.3V SOT-23
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
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AnzahlPrivatkunde
10764+0.058 EUR
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BZB84-B30,215 PHGLS18928-1.pdf?t.download=true&u=5oefqw
BZB84-B30,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 30V TO-236AB
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Bulk
auf Bestellung 58251 Stücke:
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9616+0.058 EUR
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PDTA143ZQCZ PDTA143X_TO_124XQC_SER.pdf
PDTA143ZQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.075 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143XQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
PDTA143XQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.075 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143XQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
PDTA143XQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
82+0.25 EUR
133+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.09 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143EQB-QZ PDTA143_114_124_144EQB-Q_SER.pdf
PDTA143EQB-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143EQB-QZ PDTA143_114_124_144EQB-Q_SER.pdf
PDTA143EQB-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
79+0.26 EUR
127+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.095 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143ZQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
PDTA143ZQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.075 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143ZQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
PDTA143ZQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
82+0.25 EUR
133+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.09 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143EQC-QZ PDTA143_114_124_144EQC-Q_SER.pdf
PDTA143EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143EQC-QZ PDTA143_114_124_144EQC-Q_SER.pdf
PDTA143EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
82+0.25 EUR
133+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.09 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143XQCZ PDTA143X_TO_124XQC_SER.pdf
PDTA143XQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.075 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143XQCZ PDTA143X_TO_124XQC_SER.pdf
PDTA143XQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
138+0.15 EUR
500+0.11 EUR
1000+0.099 EUR
2000+0.087 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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