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BUK9M67-60ELX BUK9M67-60ELX Nexperia USA Inc. BUK9M67-60EL.pdf Description: SINGLE N-CHANNEL 60 V, 44 MOHM L
Qualification: AEC-Q100
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 43.8mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
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BUK9M31-60ELX BUK9M31-60ELX Nexperia USA Inc. BUK9M31-60EL.pdf Description: SINGLE N-CHANNEL 60 V, 21 MOHM L
Input Capacitance (Ciss) (Max) @ Vds: 1867 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BUK9M31-60ELX BUK9M31-60ELX Nexperia USA Inc. BUK9M31-60EL.pdf Description: SINGLE N-CHANNEL 60 V, 21 MOHM L
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1867 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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IP4786CZ32Y IP4786CZ32Y Nexperia USA Inc. IP4786CZ32.pdf Description: IC INTFACE SPECIALIZED 32HVQFN
Supplier Device Package: 32-HVQFN (5x5)
Applications: DVD, HD, Set-Top Boxes, Recorders
Voltage - Supply: 3.3V, 5V
Interface: DVI, HDMI
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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74LVC1G32GF/S500,1 74LVC1G32GF/S500,1 Nexperia USA Inc. PHGLS25598-1.pdf?t.download=true&u=5oefqw Description: IC SNGL 2-INP
Packaging: Bulk
Part Status: Active
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74LVC1G32GM 74LVC1G32GM Nexperia USA Inc. PHGLS25598-1.pdf?t.download=true&u=5oefqw Description: ELECTRONIC INTEGRATED CIRCUITS,O
Part Status: Active
Packaging: Bulk
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NZX2V4A,133 NZX2V4A,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 2.4V 500MW ALF2
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±4%
Packaging: Cut Tape (CT)
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BZX8850S-C7V5YL BZX8850S-C7V5YL Nexperia USA Inc. BZX8850S_SER.pdf Description: BZX8850S-C7V5/SOD882BD/XSON2
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BZX8850S-C7V5YL BZX8850S-C7V5YL Nexperia USA Inc. BZX8850S_SER.pdf Description: BZX8850S-C7V5/SOD882BD/XSON2
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BZX8850S-C4V3YL BZX8850S-C4V3YL Nexperia USA Inc. BZX8850S_SER.pdf Description: DIODE ZENER 4.3V 365MW DFN1006BD
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZX8850S-C4V3YL BZX8850S-C4V3YL Nexperia USA Inc. BZX8850S_SER.pdf Description: DIODE ZENER 4.3V 365MW DFN1006BD
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Cut Tape (CT)
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NX138AKS115 NX138AKS115 Nexperia USA Inc. NX138AKS.pdf Description: NOW NEXPERIA NX138AKS - SMALL SI
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BZT52-C39J BZT52-C39J Nexperia USA Inc. BZT52_SER.pdf Description: DIODE ZENER 39V 350MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5.1%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
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PSMN014-80YL115 PSMN014-80YL115 Nexperia USA Inc. PSMN014-80YL.pdf Description: N-CHANNEL POWER MOSFET
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74AUP1G07GF,132 74AUP1G07GF,132 Nexperia USA Inc. 74AUP1G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6XSON
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Current - Output High, Low: -, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
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BUK7237-55A,118 BUK7237-55A,118 Nexperia USA Inc. BUK7237-55A.pdf Description: MOSFET N-CH 55V 32.3A DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Qualification: AEC-Q101
Grade: Automotive
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74AXP1T57GNX 74AXP1T57GNX Nexperia USA Inc. 74AXP1T57.pdf Description: DUAL SUPPLY GATE SOT1116
Number of Circuits: 1
Supplier Device Package: 8-XSON (1.2x1)
Schmitt Trigger Input: Yes
Number of Inputs: 3
Current - Output High, Low: 12mA, 12mA
Voltage - Supply: 0.7V ~ 2.75V, 1.2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 8-XFDFN
Packaging: Tape & Reel (TR)
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BZX84-C2V7,215 BZX84-C2V7,215 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 2.7V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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BZX84-C2V7,215 BZX84-C2V7,215 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 2.7V 250MW TO236AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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BAT754S,215 BAT754S,215 Nexperia USA Inc. BAT754_SER.pdf Description: DIODE ARR SCHOTTKY 30V TO-236AB
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Qualification: AEC-Q100
Grade: Automotive
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
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PBSS9110Z,135 PBSS9110Z,135 Nexperia USA Inc. PBSS9110Z.pdf Description: TRANS PNP 100V 1A SOT-223
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-223
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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PBSS9110Z,135 PBSS9110Z,135 Nexperia USA Inc. PBSS9110Z.pdf Description: TRANS PNP 100V 1A SOT-223
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-223
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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74LVC2G16GW125 74LVC2G16GW125 Nexperia USA Inc. 74LVC2G16.pdf Description: INVERTER, LVC/LCX/Z SERIES, 2 FU
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74LVC2G16GMH 74LVC2G16GMH Nexperia USA Inc. 74LVC2G16.pdf Description: IC BUFFER NON-INVERT 5.5V 6XSON
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74LVC2G16GWH 74LVC2G16GWH Nexperia USA Inc. 74LVC2G16.pdf Description: IC BUFFER NON-INVERT 5.5V SOT363
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74LVC2G16GFH 74LVC2G16GFH Nexperia USA Inc. 74LVC2G16.pdf Description: IC BUFFER NON-INVERT 5.5V 6XSON
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74HC259D,652 74HC259D,652 Nexperia USA Inc. 74HC_HCT259.pdf Description: IC D-TYPE ADDR 1:8 16-SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 16-SO
Part Status: Obsolete
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BUK9C10-55BIT/A,11 BUK9C10-55BIT/A,11 Nexperia USA Inc. BUK9C10-55BIT.pdf Description: MOSFET N-CH 55V 75A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 4667 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 194W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LVC377D,112 74LVC377D,112 Nexperia USA Inc. 74LVC377.pdf Description: NEXPERIA 74LVC377D - D FLIP-FLOP
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 330 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-SO
Max Propagation Delay @ V, Max CL: 7.6ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
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PMEG045V050EPDZ PMEG045V050EPDZ Nexperia USA Inc. PMEG045V050EPD.pdf Description: DIODE SCHOTTKY 45V 5A CFP15
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Not For New Designs
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 580pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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PMEG045V050EPDZ PMEG045V050EPDZ Nexperia USA Inc. PMEG045V050EPD.pdf Description: DIODE SCHOTTKY 45V 5A CFP15
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Not For New Designs
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 580pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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74AUP1T45GF,132 74AUP1T45GF,132 Nexperia USA Inc. 74AUP1T45.pdf Description: IC XLTR 6-XSON/SOT891
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.1V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
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BZX884S-C3V6-QYL BZX884S-C3V6-QYL Nexperia USA Inc. BZX884S-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Tolerance: ±5.56%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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PMEG050V030EPEZ PMEG050V030EPEZ Nexperia USA Inc. PMEG050V030EPE.pdf Description: DIODE SCHOTTKY 50V 3A CFP15B
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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PMEG050V030EPEZ PMEG050V030EPEZ Nexperia USA Inc. PMEG050V030EPE.pdf Description: DIODE SCHOTTKY 50V 3A CFP15B
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Technology: Schottky
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 12 ns
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PMEG050V150EPEZ PMEG050V150EPEZ Nexperia USA Inc. PMEG050V150EPE.pdf Description: DIODE SCHOTTKY 50V 15A CFP15B
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 27 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 370 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C
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PMEG050V150EPEZ PMEG050V150EPEZ Nexperia USA Inc. PMEG050V150EPE.pdf Description: DIODE SCHOTTKY 50V 15A CFP15B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Schottky
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 370 µA @ 50 V
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PMEG050V030EPE-QZ PMEG050V030EPE-QZ Nexperia USA Inc. PMEG050V030EPE-Q.pdf Description: DIODE SCHOTTKY 50V 3A CFP15B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
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PMEG050V030EPE-QZ PMEG050V030EPE-QZ Nexperia USA Inc. PMEG050V030EPE-Q.pdf Description: DIODE SCHOTTKY 50V 3A CFP15B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
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74HC00PW,112 74HC00PW,112 Nexperia USA Inc. 74HC_HCT00.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
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BZX585-C43,115 BZX585-C43,115 Nexperia USA Inc. BZX585_SER.pdf Description: DIODE ZENER 43V 300MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
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BZX585-C43,115 BZX585-C43,115 Nexperia USA Inc. BZX585_SER.pdf Description: DIODE ZENER 43V 300MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
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PMEG045V050EPEZ PMEG045V050EPEZ Nexperia USA Inc. PMEG045V050EPE.pdf Description: DIODE SCHOTTKY 45V 5A CFP15B
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 540pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 18 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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PMEG045V050EPEZ PMEG045V050EPEZ Nexperia USA Inc. PMEG045V050EPE.pdf Description: DIODE SCHOTTKY 45V 5A CFP15B
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 540pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 18 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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PNE200100CPE-QZ PNE200100CPE-QZ Nexperia USA Inc. Description: DIODE ARRAY GP 200V 5A CFP15B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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PNE200100CPE-QZ PNE200100CPE-QZ Nexperia USA Inc. Description: DIODE ARRAY GP 200V 5A CFP15B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BAS16VY/ZL,135 BAS16VY/ZL,135 Nexperia USA Inc. BAS16_SER.pdf Description: NEXPERIA BAS16VY - RECTIFIER DIO
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BAS16VY/ZL,115 BAS16VY/ZL,115 Nexperia USA Inc. BAS16_SER.pdf Description: NEXPERIA BAS16VY - RECTIFIER DIO
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PZU7.5B1A-QX PZU7.5B1A-QX Nexperia USA Inc. PZUXBA-Q_SER.pdf Description: PZU7.5B1A-Q/SOD323/SOD2
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PZU7.5B1A-QX PZU7.5B1A-QX Nexperia USA Inc. PZUXBA-Q_SER.pdf Description: PZU7.5B1A-Q/SOD323/SOD2
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74HCT2G02DC,125 74HCT2G02DC,125 Nexperia USA Inc. 74HC_HCT2G02.pdf Description: IC GATE NOR 2CH 2-INP 8VSSOP
Current - Quiescent (Max): 20 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 12ns @ 4.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 8-VSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Bulk
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BUK9M6R0-40HX BUK9M6R0-40HX Nexperia USA Inc. BUK9M6R0-40H.pdf Description: MOSFET N-CH 40V 50A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +16V, -10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 70W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BUK9M6R0-40HX BUK9M6R0-40HX Nexperia USA Inc. BUK9M6R0-40H.pdf Description: MOSFET N-CH 40V 50A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +16V, -10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 70W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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PSMN6R0-30YLB,115 PSMN6R0-30YLB,115 Nexperia USA Inc. PSMN6R0-30YLB.pdf Description: MOSFET N-CH 30V 71A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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PSMN6R0-30YLB,115 PSMN6R0-30YLB,115 Nexperia USA Inc. PSMN6R0-30YLB.pdf Description: MOSFET N-CH 30V 71A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
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PMEG045V100EPEZ PMEG045V100EPEZ Nexperia USA Inc. PMEG045V100EPE.pdf Description: DIODE SCHOTTKY 45V 10A CFP15B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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PMEG045V100EPEZ PMEG045V100EPEZ Nexperia USA Inc. PMEG045V100EPE.pdf Description: DIODE SCHOTTKY 45V 10A CFP15B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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PMEG060V100EPEZ PMEG060V100EPEZ Nexperia USA Inc. PMEG060V100EPE.pdf Description: DIODE SCHOTTKY 60V 10A CFP15B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Schottky
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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PMEG060V100EPEZ PMEG060V100EPEZ Nexperia USA Inc. PMEG060V100EPE.pdf Description: DIODE SCHOTTKY 60V 10A CFP15B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Schottky
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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BZX84J-C43115 BZX84J-C43115 Nexperia USA Inc. BZX84J_SER.pdf Description: NOW NEXPERIA BZX84J-C43 - ZENER
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BUK9M67-60ELX BUK9M67-60EL.pdf
BUK9M67-60ELX
Hersteller: Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 44 MOHM L
Qualification: AEC-Q100
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 43.8mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
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BUK9M31-60ELX BUK9M31-60EL.pdf
BUK9M31-60ELX
Hersteller: Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 21 MOHM L
Input Capacitance (Ciss) (Max) @ Vds: 1867 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BUK9M31-60ELX BUK9M31-60EL.pdf
BUK9M31-60ELX
Hersteller: Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 21 MOHM L
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1867 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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IP4786CZ32Y IP4786CZ32.pdf
IP4786CZ32Y
Hersteller: Nexperia USA Inc.
Description: IC INTFACE SPECIALIZED 32HVQFN
Supplier Device Package: 32-HVQFN (5x5)
Applications: DVD, HD, Set-Top Boxes, Recorders
Voltage - Supply: 3.3V, 5V
Interface: DVI, HDMI
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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74LVC1G32GF/S500,1 PHGLS25598-1.pdf?t.download=true&u=5oefqw
74LVC1G32GF/S500,1
Hersteller: Nexperia USA Inc.
Description: IC SNGL 2-INP
Packaging: Bulk
Part Status: Active
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74LVC1G32GM PHGLS25598-1.pdf?t.download=true&u=5oefqw
74LVC1G32GM
Hersteller: Nexperia USA Inc.
Description: ELECTRONIC INTEGRATED CIRCUITS,O
Part Status: Active
Packaging: Bulk
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NZX2V4A,133 NZX_SER.pdf
NZX2V4A,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.4V 500MW ALF2
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±4%
Packaging: Cut Tape (CT)
auf Bestellung 9979 Stücke:
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50+0.42 EUR
82+0.25 EUR
116+0.18 EUR
133+0.15 EUR
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BZX8850S-C7V5YL BZX8850S_SER.pdf
BZX8850S-C7V5YL
Hersteller: Nexperia USA Inc.
Description: BZX8850S-C7V5/SOD882BD/XSON2
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BZX8850S-C7V5YL BZX8850S_SER.pdf
BZX8850S-C7V5YL
Hersteller: Nexperia USA Inc.
Description: BZX8850S-C7V5/SOD882BD/XSON2
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BZX8850S-C4V3YL BZX8850S_SER.pdf
BZX8850S-C4V3YL
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.3V 365MW DFN1006BD
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZX8850S-C4V3YL BZX8850S_SER.pdf
BZX8850S-C4V3YL
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.3V 365MW DFN1006BD
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NX138AKS115 NX138AKS.pdf
NX138AKS115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA NX138AKS - SMALL SI
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BZT52-C39J BZT52_SER.pdf
BZT52-C39J
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 39V 350MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5.1%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Grade: Automotive
Qualification: AEC-Q101
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67+0.31 EUR
110+0.19 EUR
177+0.12 EUR
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PSMN014-80YL115 PSMN014-80YL.pdf
PSMN014-80YL115
Hersteller: Nexperia USA Inc.
Description: N-CHANNEL POWER MOSFET
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74AUP1G07GF,132 74AUP1G07.pdf
74AUP1G07GF,132
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 3.6V 6XSON
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Current - Output High, Low: -, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK7237-55A,118 BUK7237-55A.pdf
BUK7237-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 32.3A DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Qualification: AEC-Q101
Grade: Automotive
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326+1.67 EUR
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74AXP1T57GNX 74AXP1T57.pdf
74AXP1T57GNX
Hersteller: Nexperia USA Inc.
Description: DUAL SUPPLY GATE SOT1116
Number of Circuits: 1
Supplier Device Package: 8-XSON (1.2x1)
Schmitt Trigger Input: Yes
Number of Inputs: 3
Current - Output High, Low: 12mA, 12mA
Voltage - Supply: 0.7V ~ 2.75V, 1.2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 8-XFDFN
Packaging: Tape & Reel (TR)
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BZX84-C2V7,215 BZX84_SER.pdf
BZX84-C2V7,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
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BZX84-C2V7,215 BZX84_SER.pdf
BZX84-C2V7,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 250MW TO236AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 2659 Stücke:
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112+0.19 EUR
162+0.13 EUR
339+0.062 EUR
500+0.058 EUR
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BAT754S,215 BAT754_SER.pdf
BAT754S,215
Hersteller: Nexperia USA Inc.
Description: DIODE ARR SCHOTTKY 30V TO-236AB
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Qualification: AEC-Q100
Grade: Automotive
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
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44+0.48 EUR
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100+0.29 EUR
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PBSS9110Z,135 PBSS9110Z.pdf
PBSS9110Z,135
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 100V 1A SOT-223
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-223
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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4000+0.24 EUR
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PBSS9110Z,135 PBSS9110Z.pdf
PBSS9110Z,135
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 100V 1A SOT-223
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-223
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 17787 Stücke:
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19+1.11 EUR
31+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
2000+0.26 EUR
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74LVC2G16GW125 74LVC2G16.pdf
74LVC2G16GW125
Hersteller: Nexperia USA Inc.
Description: INVERTER, LVC/LCX/Z SERIES, 2 FU
Produkt ist nicht verfügbar
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74LVC2G16GMH 74LVC2G16.pdf
74LVC2G16GMH
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 6XSON
Produkt ist nicht verfügbar
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74LVC2G16GWH 74LVC2G16.pdf
74LVC2G16GWH
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V SOT363
Produkt ist nicht verfügbar
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74LVC2G16GFH 74LVC2G16.pdf
74LVC2G16GFH
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 6XSON
Produkt ist nicht verfügbar
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74HC259D,652 74HC_HCT259.pdf
74HC259D,652
Hersteller: Nexperia USA Inc.
Description: IC D-TYPE ADDR 1:8 16-SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 16-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BUK9C10-55BIT/A,11 BUK9C10-55BIT.pdf
BUK9C10-55BIT/A,11
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 4667 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 194W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LVC377D,112 74LVC377.pdf
74LVC377D,112
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74LVC377D - D FLIP-FLOP
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 330 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-SO
Max Propagation Delay @ V, Max CL: 7.6ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 4200 Stücke:
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823+0.75 EUR
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PMEG045V050EPDZ PMEG045V050EPD.pdf
PMEG045V050EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 5A CFP15
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Not For New Designs
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 580pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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PMEG045V050EPDZ PMEG045V050EPD.pdf
PMEG045V050EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 5A CFP15
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Not For New Designs
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: CFP15
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 580pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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74AUP1T45GF,132 74AUP1T45.pdf
74AUP1T45GF,132
Hersteller: Nexperia USA Inc.
Description: IC XLTR 6-XSON/SOT891
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.1V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
auf Bestellung 7847 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
684+0.79 EUR
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BZX884S-C3V6-QYL BZX884S-Q_SER.pdf
BZX884S-C3V6-QYL
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Tolerance: ±5.56%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG050V030EPEZ PMEG050V030EPE.pdf
PMEG050V030EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 3A CFP15B
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMEG050V030EPEZ PMEG050V030EPE.pdf
PMEG050V030EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 3A CFP15B
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Technology: Schottky
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 12 ns
auf Bestellung 2932 Stücke:
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AnzahlPrivatkunde
14+1.57 EUR
22+0.96 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
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PMEG050V150EPEZ PMEG050V150EPE.pdf
PMEG050V150EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 15A CFP15B
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 27 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 370 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C
Produkt ist nicht verfügbar
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PMEG050V150EPEZ PMEG050V150EPE.pdf
PMEG050V150EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 15A CFP15B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Schottky
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 370 µA @ 50 V
auf Bestellung 3766 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
12+1.78 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.84 EUR
2000+0.77 EUR
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PMEG050V030EPE-QZ PMEG050V030EPE-Q.pdf
PMEG050V030EPE-QZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 3A CFP15B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG050V030EPE-QZ PMEG050V030EPE-Q.pdf
PMEG050V030EPE-QZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 3A CFP15B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
auf Bestellung 4807 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.62 EUR
21+1 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.44 EUR
2000+0.4 EUR
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74HC00PW,112 74HC_HCT00.pdf
74HC00PW,112
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
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BZX585-C43,115 BZX585_SER.pdf
BZX585-C43,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 43V 300MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX585-C43,115 BZX585_SER.pdf
BZX585-C43,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 43V 300MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
auf Bestellung 42 Stücke:
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PMEG045V050EPEZ PMEG045V050EPE.pdf
PMEG045V050EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 5A CFP15B
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 540pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 18 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMEG045V050EPEZ PMEG045V050EPE.pdf
PMEG045V050EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 5A CFP15B
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 540pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 18 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
22+0.96 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
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PNE200100CPE-QZ
PNE200100CPE-QZ
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 200V 5A CFP15B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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PNE200100CPE-QZ
PNE200100CPE-QZ
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 200V 5A CFP15B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
11+2.02 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
2000+0.89 EUR
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BAS16VY/ZL,135 BAS16_SER.pdf
BAS16VY/ZL,135
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BAS16VY - RECTIFIER DIO
Produkt ist nicht verfügbar
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BAS16VY/ZL,115 BAS16_SER.pdf
BAS16VY/ZL,115
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BAS16VY - RECTIFIER DIO
Produkt ist nicht verfügbar
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PZU7.5B1A-QX PZUXBA-Q_SER.pdf
PZU7.5B1A-QX
Hersteller: Nexperia USA Inc.
Description: PZU7.5B1A-Q/SOD323/SOD2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
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PZU7.5B1A-QX PZUXBA-Q_SER.pdf
PZU7.5B1A-QX
Hersteller: Nexperia USA Inc.
Description: PZU7.5B1A-Q/SOD323/SOD2
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33+0.65 EUR
40+0.54 EUR
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74HCT2G02DC,125 74HC_HCT2G02.pdf
74HCT2G02DC,125
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 2CH 2-INP 8VSSOP
Current - Quiescent (Max): 20 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 12ns @ 4.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 8-VSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Bulk
auf Bestellung 7730 Stücke:
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1566+0.37 EUR
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BUK9M6R0-40HX BUK9M6R0-40H.pdf
BUK9M6R0-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 50A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +16V, -10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 70W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
1500+1.02 EUR
3000+0.96 EUR
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BUK9M6R0-40HX BUK9M6R0-40H.pdf
BUK9M6R0-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 50A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +16V, -10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 70W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3800 Stücke:
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9+2.34 EUR
11+1.9 EUR
100+1.49 EUR
500+1.26 EUR
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PSMN6R0-30YLB,115 PSMN6R0-30YLB.pdf
PSMN6R0-30YLB,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 71A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+0.55 EUR
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PSMN6R0-30YLB,115 PSMN6R0-30YLB.pdf
PSMN6R0-30YLB,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 71A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 2942 Stücke:
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AnzahlPrivatkunde
17+1.27 EUR
20+1.11 EUR
100+0.76 EUR
500+0.64 EUR
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PMEG045V100EPEZ PMEG045V100EPE.pdf
PMEG045V100EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.45 EUR
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PMEG045V100EPEZ PMEG045V100EPE.pdf
PMEG045V100EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
auf Bestellung 5449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.21 EUR
100+0.8 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 11 Stücke
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PMEG060V100EPEZ PMEG060V100EPE.pdf
PMEG060V100EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 10A CFP15B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Schottky
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PMEG060V100EPEZ PMEG060V100EPE.pdf
PMEG060V100EPEZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 10A CFP15B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Schottky
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
auf Bestellung 2670 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
21+1.02 EUR
100+0.86 EUR
500+0.68 EUR
1000+0.54 EUR
Mindestbestellmenge: 18 Stücke
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BZX84J-C43115 BZX84J_SER.pdf
BZX84J-C43115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA BZX84J-C43 - ZENER
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11823+0.064 EUR
Mindestbestellmenge: 11823 Stücke
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