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BZX58550-B1V8-QX BZX58550-B1V8-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 1.8V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Qualification: AEC-Q101
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74LVCH245APW,112 74LVCH245APW,112 Nexperia USA Inc. 74LVC_LVCH245A.pdf Description: IC TXRX NON-INVERT 3.6V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
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74LVC06APW,112 74LVC06APW,112 Nexperia USA Inc. 74LVC06A.pdf Description: IC INVERTER
Packaging: Bulk
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PMDPB30XNAX PMDPB30XNAX Nexperia USA Inc. PMDPB30XNA.pdf Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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PMDPB30XNAX PMDPB30XNAX Nexperia USA Inc. PMDPB30XNA.pdf Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
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PMCPB5530XAX PMCPB5530XAX Nexperia USA Inc. PMCPB5530XA.pdf Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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PMCPB5530XAX PMCPB5530XAX Nexperia USA Inc. PMCPB5530XA.pdf Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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BUK7J2R4-80MX BUK7J2R4-80MX Nexperia USA Inc. BUK7J2R4-80M.pdf Description: BUK7J2R4-80M/SOT1023/LFPAK56E
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 231A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
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BUK7J2R4-80MX BUK7J2R4-80MX Nexperia USA Inc. BUK7J2R4-80M.pdf Description: BUK7J2R4-80M/SOT1023/LFPAK56E
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 231A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
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PSC1065B1-QZ PSC1065B1-QZ Nexperia USA Inc. PSC1065B1-Q.pdf Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
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PSC1065B1-QZ PSC1065B1-QZ Nexperia USA Inc. PSC1065B1-Q.pdf Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
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PSC0665KQ PSC0665KQ Nexperia USA Inc. PSC0665K.pdf Description: DIODE SIL CARBIDE 650V 6A TO220
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 225pF @ 1V, 1MHz
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PSC0665KQ PSC0665KQ Nexperia USA Inc. PSC0665K.pdf Description: DIODE SIL CARBIDE 650V 6A TO220
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 225pF @ 1V, 1MHz
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PSC1665LQ PSC1665LQ Nexperia USA Inc. PSC1665L.pdf Description: DIODE SIL CARB 650V 16A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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PSC2065LQ PSC2065LQ Nexperia USA Inc. PSC2065L.pdf Description: DIODE SIL CARB 650V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 680pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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PZU6.8B,115 PZU6.8B,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 6.8V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Qualification: AEC-Q100
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PZU6.8B,115 PZU6.8B,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 6.8V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Qualification: AEC-Q100
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BAV99QB-QZ BAV99QB-QZ Nexperia USA Inc. BAV99QB-Q.pdf Description: BAV99QB-Q/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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BAV99QB-QZ BAV99QB-QZ Nexperia USA Inc. BAV99QB-Q.pdf Description: BAV99QB-Q/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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BAV99QBZ BAV99QBZ Nexperia USA Inc. BAV99QB.pdf Description: BAV99QB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAV99QBZ BAV99QBZ Nexperia USA Inc. BAV99QB.pdf Description: BAV99QB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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224+0.094 EUR
272+0.077 EUR
305+0.069 EUR
500+0.064 EUR
1000+0.06 EUR
2500+0.056 EUR
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PDTA123YT,215 PDTA123YT,215 Nexperia USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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PDTA123YT,215 PDTA123YT,215 Nexperia USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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74HC157BQ,115 74HC157BQ,115 Nexperia USA Inc. 74HC_HCT157.pdf Description: IC MULTIPLEXER 4 X 2:1 16-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DHVQFN (2.5x3.5)
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74HC157BQ,115 74HC157BQ,115 Nexperia USA Inc. 74HC_HCT157.pdf Description: IC MULTIPLEXER 4 X 2:1 16-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DHVQFN (2.5x3.5)
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34+0.63 EUR
38+0.56 EUR
100+0.49 EUR
250+0.45 EUR
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1000+0.42 EUR
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PMPB27EPZ Nexperia USA Inc. PMPB27EP.pdf Description: PMPB27EP/SOT1220/SOT1220
Packaging: Tape & Reel (TR)
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PMPB27EPZ Nexperia USA Inc. PMPB27EP.pdf Description: PMPB27EP/SOT1220/SOT1220
Packaging: Cut Tape (CT)
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BAS21H-QX BAS21H-QX Nexperia USA Inc. Description: BAS21H-Q/SOD123F/SOD2
Supplier Device Package: SOD-123F
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
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74AHC3G14GD,125 74AHC3G14GD,125 Nexperia USA Inc. 74AHC_AHCT3G14.pdf Description: IC INVERT SCHMITT 3CH 3INP 8XSON
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 8-XSON (2x3)
Number of Inputs: 3
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
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74AHC3G14GD,125 74AHC3G14GD,125 Nexperia USA Inc. 74AHC_AHCT3G14.pdf Description: IC INVERT SCHMITT 3CH 3INP 8XSON
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 8-XSON (2x3)
Number of Inputs: 3
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
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PMBT3904YSRH PMBT3904YSRH Nexperia USA Inc. PMBT3904YSR.pdf Description: TRANS 2NPN 40V 200MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 230mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
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74LVC1G08GV-Q100,1 74LVC1G08GV-Q100,1 Nexperia USA Inc. 74LVC1G08_Q100.pdf Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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74LVC1G08GV-Q100,1 74LVC1G08GV-Q100,1 Nexperia USA Inc. 74LVC1G08_Q100.pdf Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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74LVC2G32GM,125 74LVC2G32GM,125 Nexperia USA Inc. 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP 8XQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-XQFN (1.6x1.6)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
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74LVC2G32GM,125 74LVC2G32GM,125 Nexperia USA Inc. 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP 8XQFN
Packaging: Cut Tape (CT)
Package / Case: 8-XFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-XQFN (1.6x1.6)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
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LD6816CX4/23H,315 LD6816CX4/23H,315 Nexperia USA Inc. LD6816.pdf Description: IC REG LINEAR 2.3V 150MA 4-WLCSP
Packaging: Bulk
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 2.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
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PSMN2R5-80SSEJ PSMN2R5-80SSEJ Nexperia USA Inc. PSMN2R5-80SSE.pdf Description: POWERMOS ASFETS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13485 pF @ 40 V
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PSMN2R5-80SSEJ PSMN2R5-80SSEJ Nexperia USA Inc. PSMN2R5-80SSE.pdf Description: POWERMOS ASFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13485 pF @ 40 V
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BC817-16-QR BC817-16-QR Nexperia USA Inc. BC817-Q_SER.pdf Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC817-16-QR BC817-16-QR Nexperia USA Inc. BC817-Q_SER.pdf Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC817,235 BC817,235 Nexperia USA Inc. BC817_SER.pdf Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC817,235 BC817,235 Nexperia USA Inc. BC817_SER.pdf Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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PDTB113ZUF PDTB113ZUF Nexperia USA Inc. PDTB1XXXU_SER.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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PDTB113EUX PDTB113EUX Nexperia USA Inc. PDTB1XXXU_SER.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
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PTVS18VP1UTP-QX Nexperia USA Inc. Description: TVS DIODE 18VWM 29.2VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS18VP1UTP-QX Nexperia USA Inc. Description: TVS DIODE 18VWM 29.2VC SOD1285
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS18VS1UR-QX PTVS18VS1UR-QX Nexperia USA Inc. PTVSXS1UR-Q_SER.pdf Description: TVS DIODE 18VWM 29.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS18VS1UTR-QX PTVS18VS1UTR-QX Nexperia USA Inc. PTVSXS1UTR-Q_SER.pdf Description: TVS DIODE 18VWM 29.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS18VP1UP-QX PTVS18VP1UP-QX Nexperia USA Inc. PTVSXP1UP-Q_SER.pdf Description: TVS DIODE 18VWM 29.2VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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74HC27PW,118 74HC27PW,118 Nexperia USA Inc. 74HC_HCT27.pdf Description: IC GATE NOR 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74HC27PW,118 74HC27PW,118 Nexperia USA Inc. 74HC_HCT27.pdf Description: IC GATE NOR 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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BZX384-C24-QX BZX384-C24-QX Nexperia USA Inc. BZX384-Q_SER.pdf Description: DIODE ZENER 24.2V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.94 V
Qualification: AEC-Q101
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74AUP1G38GM,132 74AUP1G38GM,132 Nexperia USA Inc. 74AUP1G38.pdf Description: IC GATE NAND 1CH 2-INP 6XSON
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Number of Inputs: 2
Current - Output High, Low: -, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Features: Open Drain
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 500 nA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
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74AUP1G38GM,132 74AUP1G38GM,132 Nexperia USA Inc. 74AUP1G38.pdf Description: IC GATE NAND 1CH 2-INP 6XSON
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74HC240N,652 74HC240N,652 Nexperia USA Inc. 74HC_HCT240.pdf Description: IC BUFF 2V/6V 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-DIP
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PTVS43VS1UR-QX PTVS43VS1UR-QX Nexperia USA Inc. PTVSXS1UR-Q_SER.pdf Description: TVS DIODE 43VWM 69.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 43V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS43VS1UR-QX PTVS43VS1UR-QX Nexperia USA Inc. PTVSXS1UR-Q_SER.pdf Description: TVS DIODE 43VWM 69.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 43V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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74HCT2G14GV-Q100H 74HCT2G14GV-Q100H Nexperia USA Inc. 74HC_HCT2G14_Q100.pdf Description: IC INVERT SCHMITT 2CH 2INP 6TSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Grade: Automotive
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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74HCT2G14GV-Q100H 74HCT2G14GV-Q100H Nexperia USA Inc. 74HC_HCT2G14_Q100.pdf Description: IC INVERT SCHMITT 2CH 2INP 6TSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Grade: Automotive
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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PSC1065B1AZ PSC1065B1AZ Nexperia USA Inc. PSC1065B1.pdf Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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BZX58550-B1V8-QX BZX58550-Q_SER.pdf
BZX58550-B1V8-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 1.8V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74LVCH245APW,112 74LVC_LVCH245A.pdf
74LVCH245APW,112
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
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74LVC06APW,112 74LVC06A.pdf
74LVC06APW,112
Hersteller: Nexperia USA Inc.
Description: IC INVERTER
Packaging: Bulk
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PMDPB30XNAX PMDPB30XNA.pdf
PMDPB30XNAX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMDPB30XNAX PMDPB30XNA.pdf
PMDPB30XNAX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
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PMCPB5530XAX PMCPB5530XA.pdf
PMCPB5530XAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMCPB5530XAX PMCPB5530XA.pdf
PMCPB5530XAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7J2R4-80MX BUK7J2R4-80M.pdf
BUK7J2R4-80MX
Hersteller: Nexperia USA Inc.
Description: BUK7J2R4-80M/SOT1023/LFPAK56E
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 231A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK7J2R4-80MX BUK7J2R4-80M.pdf
BUK7J2R4-80MX
Hersteller: Nexperia USA Inc.
Description: BUK7J2R4-80M/SOT1023/LFPAK56E
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 231A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 663 Stücke:
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PSC1065B1-QZ PSC1065B1-Q.pdf
PSC1065B1-QZ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
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PSC1065B1-QZ PSC1065B1-Q.pdf
PSC1065B1-QZ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 7987 Stücke:
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PSC0665KQ PSC0665K.pdf
PSC0665KQ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 6A TO220
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 225pF @ 1V, 1MHz
Produkt ist nicht verfügbar
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PSC0665KQ PSC0665K.pdf
PSC0665KQ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 6A TO220
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 225pF @ 1V, 1MHz
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PSC1665LQ PSC1665L.pdf
PSC1665LQ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARB 650V 16A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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PSC2065LQ PSC2065L.pdf
PSC2065LQ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARB 650V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 680pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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PZU6.8B,115 PZUXB_SER.pdf
PZU6.8B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Qualification: AEC-Q100
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PZU6.8B,115 PZUXB_SER.pdf
PZU6.8B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Qualification: AEC-Q100
auf Bestellung 11804 Stücke:
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BAV99QB-QZ BAV99QB-Q.pdf
BAV99QB-QZ
Hersteller: Nexperia USA Inc.
Description: BAV99QB-Q/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV99QB-QZ BAV99QB-Q.pdf
BAV99QB-QZ
Hersteller: Nexperia USA Inc.
Description: BAV99QB-Q/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 4960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
179+0.12 EUR
211+0.1 EUR
257+0.082 EUR
287+0.074 EUR
500+0.068 EUR
1000+0.064 EUR
2500+0.06 EUR
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BAV99QBZ BAV99QB.pdf
BAV99QBZ
Hersteller: Nexperia USA Inc.
Description: BAV99QB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.043 EUR
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BAV99QBZ BAV99QB.pdf
BAV99QBZ
Hersteller: Nexperia USA Inc.
Description: BAV99QB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
112+0.19 EUR
193+0.11 EUR
224+0.094 EUR
272+0.077 EUR
305+0.069 EUR
500+0.064 EUR
1000+0.06 EUR
2500+0.056 EUR
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PDTA123YT,215 PDTA123Y_SER.pdf
PDTA123YT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTA123YT,215 PDTA123Y_SER.pdf
PDTA123YT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 1655 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
121+0.18 EUR
171+0.12 EUR
197+0.11 EUR
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74HC157BQ,115 74HC_HCT157.pdf
74HC157BQ,115
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Produkt ist nicht verfügbar
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74HC157BQ,115 74HC_HCT157.pdf
74HC157BQ,115
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DHVQFN (2.5x3.5)
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
34+0.63 EUR
38+0.56 EUR
100+0.49 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.42 EUR
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PMPB27EPZ PMPB27EP.pdf
Hersteller: Nexperia USA Inc.
Description: PMPB27EP/SOT1220/SOT1220
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMPB27EPZ PMPB27EP.pdf
Hersteller: Nexperia USA Inc.
Description: PMPB27EP/SOT1220/SOT1220
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BAS21H-QX
BAS21H-QX
Hersteller: Nexperia USA Inc.
Description: BAS21H-Q/SOD123F/SOD2
Supplier Device Package: SOD-123F
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74AHC3G14GD,125 74AHC_AHCT3G14.pdf
74AHC3G14GD,125
Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 3CH 3INP 8XSON
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 8-XSON (2x3)
Number of Inputs: 3
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74AHC3G14GD,125 74AHC_AHCT3G14.pdf
74AHC3G14GD,125
Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 3CH 3INP 8XSON
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 8-XSON (2x3)
Number of Inputs: 3
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PMBT3904YSRH PMBT3904YSR.pdf
PMBT3904YSRH
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 40V 200MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 230mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar
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74LVC1G08GV-Q100,1 74LVC1G08_Q100.pdf
74LVC1G08GV-Q100,1
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LVC1G08GV-Q100,1 74LVC1G08_Q100.pdf
74LVC1G08GV-Q100,1
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
auf Bestellung 1296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
143+0.14 EUR
164+0.13 EUR
194+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
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74LVC2G32GM,125 74LVC2G32.pdf
74LVC2G32GM,125
Hersteller: Nexperia USA Inc.
Description: IC GATE OR 2CH 2-INP 8XQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-XQFN (1.6x1.6)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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74LVC2G32GM,125 74LVC2G32.pdf
74LVC2G32GM,125
Hersteller: Nexperia USA Inc.
Description: IC GATE OR 2CH 2-INP 8XQFN
Packaging: Cut Tape (CT)
Package / Case: 8-XFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-XQFN (1.6x1.6)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
auf Bestellung 111 Stücke:
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17+1.24 EUR
25+0.87 EUR
27+0.77 EUR
100+0.68 EUR
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LD6816CX4/23H,315 LD6816.pdf
LD6816CX4/23H,315
Hersteller: Nexperia USA Inc.
Description: IC REG LINEAR 2.3V 150MA 4-WLCSP
Packaging: Bulk
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 2.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
auf Bestellung 18000 Stücke:
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1165+0.46 EUR
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PSMN2R5-80SSEJ PSMN2R5-80SSE.pdf
PSMN2R5-80SSEJ
Hersteller: Nexperia USA Inc.
Description: POWERMOS ASFETS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13485 pF @ 40 V
Produkt ist nicht verfügbar
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PSMN2R5-80SSEJ PSMN2R5-80SSE.pdf
PSMN2R5-80SSEJ
Hersteller: Nexperia USA Inc.
Description: POWERMOS ASFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Ta)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13485 pF @ 40 V
auf Bestellung 904 Stücke:
Lieferzeit 10-14 Tag (e)
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2+11.47 EUR
10+7.69 EUR
100+5.55 EUR
500+4.63 EUR
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BC817-16-QR BC817-Q_SER.pdf
BC817-16-QR
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC817-16-QR BC817-Q_SER.pdf
BC817-16-QR
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC817,235 BC817_SER.pdf
BC817,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.033 EUR
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BC817,235 BC817_SER.pdf
BC817,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 16589 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
159+0.13 EUR
259+0.081 EUR
500+0.058 EUR
1000+0.051 EUR
2000+0.045 EUR
5000+0.038 EUR
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PDTB113ZUF PDTB1XXXU_SER.pdf
PDTB113ZUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 49885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6601+0.092 EUR
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PDTB113EUX PDTB1XXXU_SER.pdf
PDTB113EUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
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PTVS18VP1UTP-QX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS18VP1UTP-QX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC SOD1285
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS18VS1UR-QX PTVSXS1UR-Q_SER.pdf
PTVS18VS1UR-QX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS18VS1UTR-QX PTVSXS1UTR-Q_SER.pdf
PTVS18VS1UTR-QX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS18VP1UP-QX PTVSXP1UP-Q_SER.pdf
PTVS18VP1UP-QX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Produkt ist nicht verfügbar
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74HC27PW,118 74HC_HCT27.pdf
74HC27PW,118
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74HC27PW,118 74HC_HCT27.pdf
74HC27PW,118
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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BZX384-C24-QX BZX384-Q_SER.pdf
BZX384-C24-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 24.2V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.94 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74AUP1G38GM,132 74AUP1G38.pdf
74AUP1G38GM,132
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 2-INP 6XSON
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Number of Inputs: 2
Current - Output High, Low: -, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Features: Open Drain
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 500 nA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Produkt ist nicht verfügbar
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74AUP1G38GM,132 74AUP1G38.pdf
74AUP1G38GM,132
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 2-INP 6XSON
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74HC240N,652 74HC_HCT240.pdf
74HC240N,652
Hersteller: Nexperia USA Inc.
Description: IC BUFF 2V/6V 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-DIP
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PTVS43VS1UR-QX PTVSXS1UR-Q_SER.pdf
PTVS43VS1UR-QX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 43VWM 69.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 43V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3000+0.23 EUR
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PTVS43VS1UR-QX PTVSXS1UR-Q_SER.pdf
PTVS43VS1UR-QX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 43VWM 69.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 43V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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74HCT2G14GV-Q100H 74HC_HCT2G14_Q100.pdf
74HCT2G14GV-Q100H
Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 2CH 2INP 6TSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Grade: Automotive
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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3000+0.2 EUR
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74HCT2G14GV-Q100H 74HC_HCT2G14_Q100.pdf
74HCT2G14GV-Q100H
Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 2CH 2INP 6TSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Grade: Automotive
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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PSC1065B1AZ PSC1065B1.pdf
PSC1065B1AZ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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