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PTVS24VP1BPLJ Nexperia USA Inc. Description: TVS DIODE 24VWM 38.9VC CFP5FL
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: CFP5-FL
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 15.5A
Applications: Telecom
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38+0.56 EUR
53+0.4 EUR
100+0.35 EUR
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PMCM4401VPEZ PMCM4401VPEZ Nexperia USA Inc. PMCM4401VPE.pdf Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Bulk
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
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PMST2369,135 PMST2369,135 Nexperia USA Inc. PMST2369.pdf Description: TRANS NPN 15V 0.2A SOT-323
Qualification: AEC-Q101
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Grade: Automotive
Supplier Device Package: SOT-323
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 400nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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BAV23C-QR BAV23C-QR Nexperia USA Inc. BAV23C-Q.pdf Description: DIODE ARR GP 200V 225MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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NID1101UPZ NID1101UPZ Nexperia USA Inc. NID1101.pdf Description: 1.5 V TO 5.5 V, 1.5 A, COMPACT I
Packaging: Tape & Reel (TR)
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NID1101UPZ NID1101UPZ Nexperia USA Inc. NID1101.pdf Description: 1.5 V TO 5.5 V, 1.5 A, COMPACT I
Packaging: Cut Tape (CT)
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PDTD123TT-QR Nexperia USA Inc. Description: PDTD123TT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
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PDTD123YU-QF Nexperia USA Inc. Description: PDTD123YU-Q/SOT323/SC-70
Packaging: Tape & Reel (TR)
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PDTD123YU-QX Nexperia USA Inc. Description: PDTD123YU-Q/SOT323/SC-70
Packaging: Tape & Reel (TR)
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PDTD123EQAZ PDTD123EQAZ Nexperia USA Inc. PDTD113_123_143_114EQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.5A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 210 MHz
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBZ16VAT-QR MMBZ16VAT-QR Nexperia USA Inc. MMBZ16VAT-Q.pdf Description: TVS DIODE 13VWM 27VC TO236AB
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 20W
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 13V (Max)
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
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MMBZ16VAT-QR MMBZ16VAT-QR Nexperia USA Inc. MMBZ16VAT-Q.pdf Description: TVS DIODE 13VWM 27VC TO236AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 20W
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 13V (Max)
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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79+0.26 EUR
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128+0.17 EUR
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PDTC123JU-QX PDTC123JU-QX Nexperia USA Inc. PDTC123JU-Q.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTC115EE,115 PDTC115EE,115 Nexperia USA Inc. PDTC115E_SERIES.pdf Description: TRANS PREBIAS NPN 50V SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
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PDTC124EE,115 PDTC124EE,115 Nexperia USA Inc. PDTC124E_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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PDTC144EE,135 PDTC144EE,135 Nexperia USA Inc. PDTC144E_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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PZU12B2AZ PZU12B2AZ Nexperia USA Inc. PZUXBA_SER.pdf Description: DIODE ZENER 13.2V SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Bulk
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BCM857DS-QX Nexperia USA Inc. BCM857DS.pdf Description: BCM857DS-Q/SOT457/SC-74
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX84W-C6V8F BZX84W-C6V8F Nexperia USA Inc. BZX84W_SER.pdf Description: DIODE ZENER 6.8V 275MW SOT323
Packaging: Bulk
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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N74F245N,602 N74F245N,602 Nexperia USA Inc. 74F245.pdf Description: IC TXRX 4.5V/5.5V 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 3mA, 24mA; 15mA, 64mA
Supplier Device Package: 20-DIP
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PMEG6010CEGW-QJ PMEG6010CEGW-QJ Nexperia USA Inc. PMEG6010CEGW-Q.pdf Description: DIODE SCHOTTKY 60V 1A SOD123
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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PMEG6010CEGW-QX PMEG6010CEGW-QX Nexperia USA Inc. PMEG6010CEGW-Q.pdf Description: DIODE SCHOTTKY 60V 1A SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
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PBSS4032PD,115 PBSS4032PD,115 Nexperia USA Inc. PHGLS19931-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 2.7A 6-TSOP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2.7 A
Supplier Device Package: 6-TSOP
Frequency - Transition: 104MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 395mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
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NX5020UNBKR NX5020UNBKR Nexperia USA Inc. NX5020UNBK.pdf Description: NX5020UNBK/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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NX5020UNBKR NX5020UNBKR Nexperia USA Inc. NX5020UNBK.pdf Description: NX5020UNBK/SOT23/TO-236AB
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
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151+0.14 EUR
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NX3020NAKS-QX NX3020NAKS-QX Nexperia USA Inc. NX3020NAKS-Q.pdf Description: NX3020NAKS-Q/SOT363/SC-88
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta), 1.3W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
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NX3020NAKS-QX NX3020NAKS-QX Nexperia USA Inc. NX3020NAKS-Q.pdf Description: NX3020NAKS-Q/SOT363/SC-88
Power - Max: 270mW (Ta), 1.3W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 30V
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250+0.18 EUR
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BZX585-B39-QX BZX585-B39-QX Nexperia USA Inc. BZX585-Q_SER.pdf Description: DIODE ZENER 39V 300MW SOD523
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 39 V
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BZX585-B39-QX BZX585-B39-QX Nexperia USA Inc. BZX585-Q_SER.pdf Description: DIODE ZENER 39V 300MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Produkt ist nicht verfügbar
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BZX585-B39-QX BZX585-B39-QX Nexperia USA Inc. BZX585-Q_SER.pdf Description: DIODE ZENER 39V 300MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Produkt ist nicht verfügbar
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BZX585-B5V1-QX BZX585-B5V1-QX Nexperia USA Inc. BZX585-Q_SER.pdf Description: DIODE ZENER 5.1V 300MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX585-B5V1-QX BZX585-B5V1-QX Nexperia USA Inc. BZX585-Q_SER.pdf Description: DIODE ZENER 5.1V 300MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 2279 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
66+0.32 EUR
92+0.23 EUR
106+0.2 EUR
Mindestbestellmenge: 40 Stücke
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NX5020UNBKSX NX5020UNBKSX Nexperia USA Inc. NX5020UNBKS.pdf Description: NX5020UNBKS/SOT363/SC-88
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20.5pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), 480mA (Tc)
Drain to Source Voltage (Vdss): 50V
Power - Max: 280mW (Ta), 860mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NX5020UNBKSX NX5020UNBKSX Nexperia USA Inc. NX5020UNBKS.pdf Description: NX5020UNBKS/SOT363/SC-88
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20.5pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), 480mA (Tc)
Drain to Source Voltage (Vdss): 50V
Power - Max: 280mW (Ta), 860mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 950mV @ 250µA
auf Bestellung 2970 Stücke:
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36+0.58 EUR
60+0.36 EUR
83+0.25 EUR
100+0.23 EUR
Mindestbestellmenge: 36 Stücke
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BUK7Q7R5-40HJ BUK7Q7R5-40HJ Nexperia USA Inc. BUK7Q7R5-40H.pdf Description: BUK7Q7R5-40H/SOT8002/MLPAK33
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1669 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
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BUK7Q7R5-40HJ BUK7Q7R5-40HJ Nexperia USA Inc. BUK7Q7R5-40H.pdf Description: BUK7Q7R5-40H/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1669 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.49 EUR
23+0.93 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.42 EUR
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BUK9M48-80LX BUK9M48-80LX Nexperia USA Inc. BUK9M48-80L.pdf Description: BUK9M48-80L/SOT1210/MLFPAK
Grade: Automotive
Supplier Device Package: LFPAK33
Power Dissipation (Max): 50W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 1500 Stücke:
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1500+0.48 EUR
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BUK9M48-80LX BUK9M48-80LX Nexperia USA Inc. BUK9M48-80L.pdf Description: BUK9M48-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Power Dissipation (Max): 50W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
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12+1.8 EUR
19+1.12 EUR
50+0.82 EUR
100+0.73 EUR
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BUK9M60-100LX BUK9M60-100LX Nexperia USA Inc. BUK9M60-100L.pdf Description: BUK9M60-100L/SOT1210/MLFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 50.4W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 30µA
Supplier Device Package: LFPAK33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9M60-100LX BUK9M60-100LX Nexperia USA Inc. BUK9M60-100L.pdf Description: BUK9M60-100L/SOT1210/MLFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 50.4W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 30µA
Supplier Device Package: LFPAK33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1466 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.74 EUR
20+1.08 EUR
100+0.7 EUR
500+0.54 EUR
Mindestbestellmenge: 13 Stücke
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BUK6Q21-30PJ BUK6Q21-30PJ Nexperia USA Inc. BUK6Q21-30P.pdf Description: BUK6Q21-30P/SOT8002/MLPAK33
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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BUK6Q21-30PJ BUK6Q21-30PJ Nexperia USA Inc. BUK6Q21-30P.pdf Description: BUK6Q21-30P/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.51 EUR
14+1.58 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
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BUK6Q26-40PJ BUK6Q26-40PJ Nexperia USA Inc. BUK6Q26-40P.pdf Description: BUK6Q26-40P/SOT8002/MLPAK33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 26.6mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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BUK6Q26-40PJ BUK6Q26-40PJ Nexperia USA Inc. BUK6Q26-40P.pdf Description: BUK6Q26-40P/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 26.6mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.53 EUR
14+1.59 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.75 EUR
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BUK9K61-100LX BUK9K61-100LX Nexperia USA Inc. BUK9K61-100L.pdf Description: BUK9K61-100L/SOT1205/LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK9K61-100LX BUK9K61-100LX Nexperia USA Inc. BUK9K61-100L.pdf Description: BUK9K61-100L/SOT1205/LFPAK56D
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Qualification: AEC-Q101
Packaging: Cut Tape (CT)
auf Bestellung 250 Stücke:
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8+2.95 EUR
12+1.86 EUR
50+1.39 EUR
100+1.24 EUR
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BUK9M24-80LX BUK9M24-80LX Nexperia USA Inc. BUK9M24-80L.pdf Description: BUK9M24-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.05V @ 60µA
Power Dissipation (Max): 67W (Ta)
Rds On (Max) @ Id, Vgs: 23.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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BUK9M24-80LX BUK9M24-80LX Nexperia USA Inc. BUK9M24-80L.pdf Description: BUK9M24-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.05V @ 60µA
Power Dissipation (Max): 67W (Ta)
Rds On (Max) @ Id, Vgs: 23.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.09 EUR
11+1.95 EUR
50+1.45 EUR
100+1.3 EUR
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GANE350-650FBAZ Nexperia USA Inc. GANE350-650FBA.pdf Description: GANE350-650FBA/SOT8075/DFN5060
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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GANE350-650FBAZ Nexperia USA Inc. GANE350-650FBA.pdf Description: GANE350-650FBA/SOT8075/DFN5060
Packaging: Cut Tape (CT)
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.76 EUR
10+3.07 EUR
50+2.33 EUR
100+2.09 EUR
500+1.68 EUR
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BUK9K35-100LX BUK9K35-100LX Nexperia USA Inc. BUK9K35-100L.pdf Description: BUK9K35-100L/SOT1205/LFPAK56D
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 50µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1752pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Qualification: AEC-Q101
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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BUK9K35-100LX BUK9K35-100LX Nexperia USA Inc. BUK9K35-100L.pdf Description: BUK9K35-100L/SOT1205/LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 50µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1752pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
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10+2.19 EUR
50+1.64 EUR
100+1.46 EUR
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BUK9M13-80LX BUK9M13-80LX Nexperia USA Inc. BUK9M13-80L.pdf Description: BUK9M13-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3341 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51.3 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.05V @ 120µA
Power Dissipation (Max): 91W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK9M13-80LX BUK9M13-80LX Nexperia USA Inc. BUK9M13-80L.pdf Description: BUK9M13-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3341 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51.3 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.05V @ 120µA
Power Dissipation (Max): 91W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
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BUK9K12-80LX BUK9K12-80LX Nexperia USA Inc. BUK9K12-80L.pdf Description: BUK9K12-80L/SOT1205/LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4441pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.05V @ 140µA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
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10+2.73 EUR
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GANE7R0-100CBAZ Nexperia USA Inc. GANE7R0-100CBA.pdf Description: GANFET N-CH 100V 29A 6WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GANE7R0-100CBAZ Nexperia USA Inc. GANE7R0-100CBA.pdf Description: GANFET N-CH 100V 29A 6WLCSP
Packaging: Cut Tape (CT)
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10+3.19 EUR
50+2.43 EUR
100+2.18 EUR
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GANE2R7-100CBAZ Nexperia USA Inc. GANE2R7-100CBA.pdf Description: GANE2R7-100CBA/SOT8089/WLCSP22
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +5.5V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Power Dissipation (Max): 470W (Tc)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: P-Channel
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GANE2R7-100CBAZ Nexperia USA Inc. GANE2R7-100CBA.pdf Description: GANE2R7-100CBA/SOT8089/WLCSP22
Vgs (Max): +5.5V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Power Dissipation (Max): 470W (Tc)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: P-Channel
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Packaging: Cut Tape (CT)
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GANB1R2-040QBAZ Nexperia USA Inc. GANB1R2-040QBA.pdf Description: GANB1R2-040QBA/SOT8092/VQFN16
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 5V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 27-VQFN (6x4)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
Produkt ist nicht verfügbar
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PTVS24VP1BPLJ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 24VWM 38.9VC CFP5FL
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
Supplier Device Package: CFP5-FL
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 15.5A
Applications: Telecom
auf Bestellung 9988 Stücke:
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24+0.9 EUR
38+0.56 EUR
53+0.4 EUR
100+0.35 EUR
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PMCM4401VPEZ PMCM4401VPE.pdf
PMCM4401VPEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Bulk
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
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988+0.55 EUR
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PMST2369,135 PMST2369.pdf
PMST2369,135
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 15V 0.2A SOT-323
Qualification: AEC-Q101
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Grade: Automotive
Supplier Device Package: SOT-323
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 400nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAV23C-QR BAV23C-Q.pdf
BAV23C-QR
Hersteller: Nexperia USA Inc.
Description: DIODE ARR GP 200V 225MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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NID1101UPZ NID1101.pdf
NID1101UPZ
Hersteller: Nexperia USA Inc.
Description: 1.5 V TO 5.5 V, 1.5 A, COMPACT I
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NID1101UPZ NID1101.pdf
NID1101UPZ
Hersteller: Nexperia USA Inc.
Description: 1.5 V TO 5.5 V, 1.5 A, COMPACT I
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PDTD123TT-QR
Hersteller: Nexperia USA Inc.
Description: PDTD123TT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PDTD123YU-QF
Hersteller: Nexperia USA Inc.
Description: PDTD123YU-Q/SOT323/SC-70
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PDTD123YU-QX
Hersteller: Nexperia USA Inc.
Description: PDTD123YU-Q/SOT323/SC-70
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PDTD123EQAZ PDTD113_123_143_114EQA_SER.pdf
PDTD123EQAZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 210 MHz
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBZ16VAT-QR MMBZ16VAT-Q.pdf
MMBZ16VAT-QR
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 13VWM 27VC TO236AB
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 20W
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 13V (Max)
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
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AnzahlPrivatkunde
3000+0.088 EUR
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MMBZ16VAT-QR MMBZ16VAT-Q.pdf
MMBZ16VAT-QR
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 13VWM 27VC TO236AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 20W
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 13V (Max)
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
79+0.26 EUR
111+0.19 EUR
128+0.17 EUR
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PDTC123JU-QX PDTC123JU-Q.pdf
PDTC123JU-QX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2248 Stücke:
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72+0.3 EUR
122+0.17 EUR
200+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
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PDTC115EE,115 PDTC115E_SERIES.pdf
PDTC115EE,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
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AnzahlPrivatkunde
4537+0.13 EUR
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PDTC124EE,115 PDTC124E_SER.pdf
PDTC124EE,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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4537+0.13 EUR
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PDTC144EE,135 PDTC144E_SER.pdf
PDTC144EE,135
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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4537+0.13 EUR
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PZU12B2AZ PZUXBA_SER.pdf
PZU12B2AZ
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13.2V SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Bulk
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3915+0.14 EUR
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BCM857DS-QX BCM857DS.pdf
Hersteller: Nexperia USA Inc.
Description: BCM857DS-Q/SOT457/SC-74
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX84W-C6V8F BZX84W_SER.pdf
BZX84W-C6V8F
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 275MW SOT323
Packaging: Bulk
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 90000 Stücke:
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6897+0.074 EUR
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N74F245N,602 74F245.pdf
N74F245N,602
Hersteller: Nexperia USA Inc.
Description: IC TXRX 4.5V/5.5V 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 3mA, 24mA; 15mA, 64mA
Supplier Device Package: 20-DIP
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174+3.17 EUR
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PMEG6010CEGW-QJ PMEG6010CEGW-Q.pdf
PMEG6010CEGW-QJ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A SOD123
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
53+0.39 EUR
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PMEG6010CEGW-QX PMEG6010CEGW-Q.pdf
PMEG6010CEGW-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
53+0.39 EUR
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PBSS4032PD,115 PHGLS19931-1.pdf?t.download=true&u=5oefqw
PBSS4032PD,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 2.7A 6-TSOP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2.7 A
Supplier Device Package: 6-TSOP
Frequency - Transition: 104MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 395mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
584+0.93 EUR
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NX5020UNBKR NX5020UNBK.pdf
NX5020UNBKR
Hersteller: Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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NX5020UNBKR NX5020UNBK.pdf
NX5020UNBKR
Hersteller: Nexperia USA Inc.
Description: NX5020UNBK/SOT23/TO-236AB
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 680mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20.5 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 10V
auf Bestellung 2355 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
108+0.19 EUR
151+0.14 EUR
175+0.12 EUR
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NX3020NAKS-QX NX3020NAKS-Q.pdf
NX3020NAKS-QX
Hersteller: Nexperia USA Inc.
Description: NX3020NAKS-Q/SOT363/SC-88
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta), 1.3W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Produkt ist nicht verfügbar
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NX3020NAKS-QX NX3020NAKS-Q.pdf
NX3020NAKS-QX
Hersteller: Nexperia USA Inc.
Description: NX3020NAKS-Q/SOT363/SC-88
Power - Max: 270mW (Ta), 1.3W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
82+0.26 EUR
93+0.23 EUR
108+0.19 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
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BZX585-B39-QX BZX585-Q_SER.pdf
BZX585-B39-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 39V 300MW SOD523
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 39 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
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BZX585-B39-QX BZX585-Q_SER.pdf
BZX585-B39-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 39V 300MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Produkt ist nicht verfügbar
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BZX585-B39-QX BZX585-Q_SER.pdf
BZX585-B39-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 39V 300MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 130 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Produkt ist nicht verfügbar
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BZX585-B5V1-QX BZX585-Q_SER.pdf
BZX585-B5V1-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 300MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX585-B5V1-QX BZX585-Q_SER.pdf
BZX585-B5V1-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 300MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 2279 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
66+0.32 EUR
92+0.23 EUR
106+0.2 EUR
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NX5020UNBKSX NX5020UNBKS.pdf
NX5020UNBKSX
Hersteller: Nexperia USA Inc.
Description: NX5020UNBKS/SOT363/SC-88
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20.5pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), 480mA (Tc)
Drain to Source Voltage (Vdss): 50V
Power - Max: 280mW (Ta), 860mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NX5020UNBKSX NX5020UNBKS.pdf
NX5020UNBKSX
Hersteller: Nexperia USA Inc.
Description: NX5020UNBKS/SOT363/SC-88
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20.5pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), 480mA (Tc)
Drain to Source Voltage (Vdss): 50V
Power - Max: 280mW (Ta), 860mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 950mV @ 250µA
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
60+0.36 EUR
83+0.25 EUR
100+0.23 EUR
Mindestbestellmenge: 36 Stücke
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BUK7Q7R5-40HJ BUK7Q7R5-40H.pdf
BUK7Q7R5-40HJ
Hersteller: Nexperia USA Inc.
Description: BUK7Q7R5-40H/SOT8002/MLPAK33
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1669 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Produkt ist nicht verfügbar
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BUK7Q7R5-40HJ BUK7Q7R5-40H.pdf
BUK7Q7R5-40HJ
Hersteller: Nexperia USA Inc.
Description: BUK7Q7R5-40H/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1669 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.49 EUR
23+0.93 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.42 EUR
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BUK9M48-80LX BUK9M48-80L.pdf
BUK9M48-80LX
Hersteller: Nexperia USA Inc.
Description: BUK9M48-80L/SOT1210/MLFPAK
Grade: Automotive
Supplier Device Package: LFPAK33
Power Dissipation (Max): 50W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.48 EUR
Mindestbestellmenge: 1500 Stücke
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BUK9M48-80LX BUK9M48-80L.pdf
BUK9M48-80LX
Hersteller: Nexperia USA Inc.
Description: BUK9M48-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Power Dissipation (Max): 50W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 1726 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
19+1.12 EUR
50+0.82 EUR
100+0.73 EUR
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BUK9M60-100LX BUK9M60-100L.pdf
BUK9M60-100LX
Hersteller: Nexperia USA Inc.
Description: BUK9M60-100L/SOT1210/MLFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 50.4W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 30µA
Supplier Device Package: LFPAK33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9M60-100LX BUK9M60-100L.pdf
BUK9M60-100LX
Hersteller: Nexperia USA Inc.
Description: BUK9M60-100L/SOT1210/MLFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 50.4W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 30µA
Supplier Device Package: LFPAK33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1466 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.74 EUR
20+1.08 EUR
100+0.7 EUR
500+0.54 EUR
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BUK6Q21-30PJ BUK6Q21-30P.pdf
BUK6Q21-30PJ
Hersteller: Nexperia USA Inc.
Description: BUK6Q21-30P/SOT8002/MLPAK33
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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BUK6Q21-30PJ BUK6Q21-30P.pdf
BUK6Q21-30PJ
Hersteller: Nexperia USA Inc.
Description: BUK6Q21-30P/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.51 EUR
14+1.58 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
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BUK6Q26-40PJ BUK6Q26-40P.pdf
BUK6Q26-40PJ
Hersteller: Nexperia USA Inc.
Description: BUK6Q26-40P/SOT8002/MLPAK33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 26.6mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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BUK6Q26-40PJ BUK6Q26-40P.pdf
BUK6Q26-40PJ
Hersteller: Nexperia USA Inc.
Description: BUK6Q26-40P/SOT8002/MLPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 26.6mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
14+1.59 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.75 EUR
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BUK9K61-100LX BUK9K61-100L.pdf
BUK9K61-100LX
Hersteller: Nexperia USA Inc.
Description: BUK9K61-100L/SOT1205/LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK9K61-100LX BUK9K61-100L.pdf
BUK9K61-100LX
Hersteller: Nexperia USA Inc.
Description: BUK9K61-100L/SOT1205/LFPAK56D
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Qualification: AEC-Q101
Packaging: Cut Tape (CT)
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.95 EUR
12+1.86 EUR
50+1.39 EUR
100+1.24 EUR
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BUK9M24-80LX BUK9M24-80L.pdf
BUK9M24-80LX
Hersteller: Nexperia USA Inc.
Description: BUK9M24-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.05V @ 60µA
Power Dissipation (Max): 67W (Ta)
Rds On (Max) @ Id, Vgs: 23.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK9M24-80LX BUK9M24-80L.pdf
BUK9M24-80LX
Hersteller: Nexperia USA Inc.
Description: BUK9M24-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.05V @ 60µA
Power Dissipation (Max): 67W (Ta)
Rds On (Max) @ Id, Vgs: 23.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.09 EUR
11+1.95 EUR
50+1.45 EUR
100+1.3 EUR
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GANE350-650FBAZ GANE350-650FBA.pdf
Hersteller: Nexperia USA Inc.
Description: GANE350-650FBA/SOT8075/DFN5060
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GANE350-650FBAZ GANE350-650FBA.pdf
Hersteller: Nexperia USA Inc.
Description: GANE350-650FBA/SOT8075/DFN5060
Packaging: Cut Tape (CT)
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.76 EUR
10+3.07 EUR
50+2.33 EUR
100+2.09 EUR
500+1.68 EUR
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BUK9K35-100LX BUK9K35-100L.pdf
BUK9K35-100LX
Hersteller: Nexperia USA Inc.
Description: BUK9K35-100L/SOT1205/LFPAK56D
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 50µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1752pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Qualification: AEC-Q101
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK9K35-100LX BUK9K35-100L.pdf
BUK9K35-100LX
Hersteller: Nexperia USA Inc.
Description: BUK9K35-100L/SOT1205/LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 50µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1752pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.45 EUR
10+2.19 EUR
50+1.64 EUR
100+1.46 EUR
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BUK9M13-80LX BUK9M13-80L.pdf
BUK9M13-80LX
Hersteller: Nexperia USA Inc.
Description: BUK9M13-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3341 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51.3 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.05V @ 120µA
Power Dissipation (Max): 91W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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BUK9M13-80LX BUK9M13-80L.pdf
BUK9M13-80LX
Hersteller: Nexperia USA Inc.
Description: BUK9M13-80L/SOT1210/MLFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3341 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51.3 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.05V @ 120µA
Power Dissipation (Max): 91W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.92 EUR
10+2.5 EUR
50+1.88 EUR
100+1.68 EUR
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BUK9K12-80LX BUK9K12-80L.pdf
BUK9K12-80LX
Hersteller: Nexperia USA Inc.
Description: BUK9K12-80L/SOT1205/LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4441pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.05V @ 140µA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
10+2.73 EUR
100+1.86 EUR
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GANE7R0-100CBAZ GANE7R0-100CBA.pdf
Hersteller: Nexperia USA Inc.
Description: GANFET N-CH 100V 29A 6WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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GANE7R0-100CBAZ GANE7R0-100CBA.pdf
Hersteller: Nexperia USA Inc.
Description: GANFET N-CH 100V 29A 6WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.96 EUR
10+3.19 EUR
50+2.43 EUR
100+2.18 EUR
500+1.75 EUR
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GANE2R7-100CBAZ GANE2R7-100CBA.pdf
Hersteller: Nexperia USA Inc.
Description: GANE2R7-100CBA/SOT8089/WLCSP22
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +5.5V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Power Dissipation (Max): 470W (Tc)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: P-Channel
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GANE2R7-100CBAZ GANE2R7-100CBA.pdf
Hersteller: Nexperia USA Inc.
Description: GANE2R7-100CBA/SOT8089/WLCSP22
Vgs (Max): +5.5V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Power Dissipation (Max): 470W (Tc)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: P-Channel
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Packaging: Cut Tape (CT)
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.72 EUR
10+7.14 EUR
50+5.6 EUR
100+5.12 EUR
500+4.63 EUR
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GANB1R2-040QBAZ GANB1R2-040QBA.pdf
Hersteller: Nexperia USA Inc.
Description: GANB1R2-040QBA/SOT8092/VQFN16
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 5V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 27-VQFN (6x4)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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