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Hersteller: NovuSem
Description: DIODE SIL CARB 1200V 10A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 670pF @ 0.1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 35 µA @ 1200 V

Hersteller: NovuSem
Description: DIODE SIL CARB 1200V 20A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1371pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V

Hersteller: NovuSem
Description: DIODE SIL CARB 1200V 30A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2125pF @ 0.1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 85 µA @ 1200 V

Hersteller: NovuSem
Description: SiC MOSFET N 1200V 12mohm 214A
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
Power Dissipation (Max): 938W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V

Hersteller: NovuSem
Description: SiC MOS Wafer 12mOhm 1200V
Packaging: Tray
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V

Hersteller: NovuSem
Description: SiC MOS Wafer 12mOhm 1200V NiPdA
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 40mA
Supplier Device Package: Wafer
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V

Hersteller: NovuSem
Description: SiC MOSFET N 1200V 40mohm 76A 3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 20V
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 2534 pF @ 1000 V

Hersteller: NovuSem
Description: SiC MOSFET N 1200V 40mohm 75A 4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 20V
Power Dissipation (Max): 366W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 2534 pF @ 1000 V

Hersteller: NovuSem
Description: SiC MOSFET N 1200V 75mohm 47A 3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
Power Dissipation (Max): 288W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 5mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 1000 V

Hersteller: NovuSem
Description: SiC MOSFET N 1200V 75mohm 47A 4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
Power Dissipation (Max): 288W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 1000 V

Hersteller: NovuSem
Description: SiC MOSFET N 1200V 75mohm 46A 7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, DPak (7 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 240W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 5mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 1000 V