| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MMBZ5235BLT1 | onsemi |
Description: DIODE ZENER 6.8V 225MW SOT-23Current - Reverse Leakage @ Vr: 3 µA @ 5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 225 mW Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Bulk |
auf Bestellung 162000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCR5287RLRE | onsemi |
Description: THY T092 SPECIAL SCR Part Status: Active Packaging: Bulk |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SCR5258 | onsemi |
Description: THY T092 SPECIAL SCR Part Status: Active Packaging: Bulk |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SCR5285RLRP | onsemi |
Description: THY T092 SPECIAL SCR TR Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
SCR5290RLRA | onsemi |
Description: THY T092 SPECIAL SCR Part Status: Active Packaging: Bulk |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MC100LVEL34DR2 | onsemi |
Description: IC CLOCK GENERATOR 16SOICNumber of Circuits: 1 Part Status: Obsolete Divider/Multiplier: Yes/No PLL: No Supplier Device Package: 16-SOIC Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:4 Voltage - Supply: 3V ~ 3.8V Operating Temperature: -40°C ~ 85°C Input: LVDS, NECL, PECL Type: Clock Generator Frequency - Max: 1.5GHz Output: ECL Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| 2SD2198S-DL-E | onsemi |
Description: BIP NPN 5A 50V Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
|
|
NRVUS1KFA | onsemi |
Description: DIODE STANDARD 800V 1A SOD123FLQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
MC74HC74AFL1 | onsemi |
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 44115 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MC74HC74AFR1 | onsemi |
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MC74HC74AFR2 | onsemi |
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SCHC74ADTR2G | onsemi |
Description: SCHC74ADTR2G Part Status: Active Packaging: Bulk DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FPF2G120BF07ASP | onsemi |
Description: IGBT MODULE 650V 40A 156W F2Package / Case: Module Packaging: Bulk IGBT Type: Field Stop Supplier Device Package: F2 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 3 Independent Input: Standard Mounting Type: Through Hole Current - Collector Cutoff (Max): 250 µA Power - Max: 156 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
|
NTD110N02RG | onsemi |
Description: MOSFET N-CH 24V 12.5A/110A DPAKInput Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NTD110N02R-001G | onsemi |
Description: MOSFET N-CH 24V 12.5A/110A IPAKPower Dissipation (Max): 1.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2V @ 250µA |
auf Bestellung 17861 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
1N5253BRL | onsemi |
Description: DIODE ZENER 25V UNIDIRECTIONALPackaging: Bulk |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MMSZ4712ET1 | onsemi |
Description: DIODE ZENER 500MW 2PIN SOD123 Packaging: Bulk |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MMSZ5238ET1 | onsemi |
Description: DIODE ZENER 8.7V 500MW 2PIN SO Packaging: Bulk |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SB986T | onsemi |
Description: POWER BIPOLAR TRANSISTOR, PNPCurrent - Collector Cutoff (Max): 1mA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Part Status: Active Packaging: Bulk |
auf Bestellung 8943 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SD1348SC-T-ND | onsemi |
Description: TRANS NPN 50V 4A TO-126Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 1mA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Part Status: Active Packaging: Bulk |
auf Bestellung 40062 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SD1348T | onsemi |
Description: TRANS NPN 50V 4A TO-126Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1mA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Part Status: Active Packaging: Bulk |
auf Bestellung 18473 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
2SD1347S | onsemi |
Description: TRANS NPN 50V 3A 3-MPPart Status: Active Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: 3-MP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| 2SD1347T | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPNPart Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 2SD1348S | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 2SD1347T-AE | onsemi |
Description: TRANS NPN 50V 3A 3-MPPart Status: Active Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: 3-MP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
|
NZ9F6V8ST5G | onsemi |
Description: DIODE ZENER 6.8V 200MW SOD923 |
auf Bestellung 146 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| NCP81101BMNTXG | onsemi |
Description: IC REG BUCK CTLR 1PH 28QFNSupplier Device Package: 28-QFN (5x5) Mounting Type: Surface Mount Package / Case: 28-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 3937 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
|
NCV8164CMTW290TAG | onsemi |
Description: IC REG LINEAR 2.9V 300MA 6WDFNW Qualification: AEC-Q100 Protection Features: Over Current, Over Temperature PSRR: 83dB ~ 61dB (100Hz ~ 100kHz) Grade: Automotive Control Features: Enable, Power Good Voltage - Output (Min/Fixed): 2.9V Supplier Device Package: 6-WDFNW (2x2) Number of Regulators: 1 Voltage - Input (Max): 5V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 300mA Mounting Type: Surface Mount, Wettable Flank Output Type: Fixed Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
LC06511D02MXTAG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6X2DFN Operating Temperature: -40°C ~ 85°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Obsolete Fault Protection: Over Current, Over Temperature Supplier Device Package: 6-X2DFN (1.4x1.4) Battery Chemistry: Lithium Ion/Polymer |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
NTTFS5D1N06HLTAG | onsemi |
Description: MOSFET N-CH 60V 18A/78A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 80µA Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NVTFS6H888NLTAG | onsemi |
Description: MOSFET N-CH 80V 4.9A/14A 8WDFNVgs(th) (Max) @ Id: 2V @ 15µA Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) |
auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NTTFS6H880NLTAG | onsemi |
Description: MOSFET N-CH 80V 6.6A/22A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NTTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNSupplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NTTFS6H854NLTAG | onsemi |
Description: MOSFET N-CH 80V 10A/41A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 45µA Power Dissipation (Max): 3.2W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NVTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NVTFS6H880NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 6.6A/22A 8WDFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) FET Type: N-Channel |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NVTFS6H860NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 289500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NTLJS4D7N03HTAG | onsemi |
Description: MOSFET N-CH 25V 11.6A 6PQFN Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTTFS8D1N08HTAG | onsemi | Description: MOSFET N-CH 80V 14A/61A 8WDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
NRVTSM260EV2T1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A POWERMITEQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 12 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Powermite Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NRVTSM260EV2T1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A POWERMITEQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 12 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Powermite Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Cut Tape (CT) |
auf Bestellung 13622 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NTLJS4D9N03HTAG | onsemi |
Description: MOSFET N-CH 30V 9.5A 6PQFN Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
NCV59745AMW1015TAG | onsemi |
Description: IC REG LINEAR 1.015V 3A 20-QFNWProtection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 1.4V @ 3A PSRR: 75dB ~ 18dB (1kHz ~ 3MHz) Part Status: Active Control Features: Enable, Power Good, Soft Start Voltage - Output (Min/Fixed): 1.015V Supplier Device Package: 20-QFNW (4x4) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 2 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 3A Mounting Type: Surface Mount, Wettable Flank Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Output Type: Fixed Package / Case: 20-VFQFN Exposed Pad |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NCV8187AMT110TAG | onsemi |
Description: IC REG LINEAR 1.1V 1.2A 6WDFN Protection Features: Over Current, Over Temperature PSRR: 75dB (1kHz) Control Features: Enable, Power Good, Soft Start Voltage - Output (Min/Fixed): 1.1V Supplier Device Package: 6-WDFN (2x2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Current - Output: 1.2A Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NCV8187AMTW110TAG | onsemi |
Description: IC REG LINEAR 1.1V 1.2A 6WDFN Supplier Device Package: 6-WDFN (2x2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 1.2A Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature PSRR: 75dB (1kHz) Control Features: Enable, Power Good, Soft Start Voltage - Output (Min/Fixed): 1.1V Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
NCP114AMX090TAG | onsemi |
Description: IC REG LINEAR 0.9V 300MA 4-UDFNPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MBRS2040LT3 | onsemi |
Description: RECTIFIER DIODE |
auf Bestellung 17768 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MC33567D-002 | onsemi |
Description: LDO CNTRLR REG 2.525V 8PIN SOICPart Status: Active Packaging: Bulk Number of Outputs: 2 Supplier Device Package: 8-SOIC Current - Supply: 6.3mA Operating Temperature: 0°C ~ 80°C Type: Positive Fixed Voltage - Input: 9V ~ 12.5V Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
auf Bestellung 1862 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
VMC10E111FNR2 | onsemi |
Description: CLOCK FANOUT BUFFER 9-OUT 28PIN Packaging: Bulk Part Status: Active |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
VMC10E111FN | onsemi |
Description: CLOCK FANOUT BUFFER 9-OUT 28PIN Part Status: Active Packaging: Bulk |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| NSTHS4101PT1G | onsemi |
Description: COMP CPFET 20V 6.7A 34MOH Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
NTHS4111PT1 | onsemi |
Description: P-CHANNEL MOSFETPart Status: Active Packaging: Bulk |
auf Bestellung 24600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NTHS4111PT1G | onsemi |
Description: MOSFET P-CH 30V 3.3A CHIPFETInput Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: ChipFET™ Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Bulk |
auf Bestellung 1562 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
MC100EL16DR2 | onsemi |
Description: IC RCVR ECL DIFFERENTL 5V 8-SOICSupplier Device Package: 8-SOIC Supply Voltage: 4.2V ~ 5.7V Operating Temperature: -40°C ~ 85°C Logic Type: Differential Receiver Number of Bits: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 8930 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MC100EL16DTG | onsemi |
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOPSupplier Device Package: 8-TSSOP Supply Voltage: 4.2V ~ 5.7V Operating Temperature: -40°C ~ 85°C Logic Type: Differential Receiver Number of Bits: 1 Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Bulk |
auf Bestellung 3513 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MBRD340T4 | onsemi |
Description: DIODE SCHOTTKY 40V 3A DPAKCurrent - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Supplier Device Package: DPAK Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
auf Bestellung 156708 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MBRD320T4 | onsemi |
Description: DEVELOPMENT KITS/ACCESSORIES |
auf Bestellung 101950 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1519 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
SN74LS32ML1 | onsemi |
Description: IC GATE ORPackaging: Bulk Part Status: Active |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CAT25080YI-G-ON | onsemi |
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOPMemory Organization: 1K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TSSOP Memory Format: EEPROM Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 8Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
SZP40142RL | onsemi |
Description: IC REG LINEAR 5W SPCL SUR40 TR Packaging: Bulk |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MMBZ5235BLT1 |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 6.8V 225MW SOT-23
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 6.8V 225MW SOT-23
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 162000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5323+ | 0.12 EUR |
| SCR5287RLRE |
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4808+ | 0.13 EUR |
| SCR5258 |
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2427+ | 0.23 EUR |
| SCR5290RLRA |
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 451+ | 1.4 EUR |
| MC100LVEL34DR2 |
![]() |
Hersteller: onsemi
Description: IC CLOCK GENERATOR 16SOIC
Number of Circuits: 1
Part Status: Obsolete
Divider/Multiplier: Yes/No
PLL: No
Supplier Device Package: 16-SOIC
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:4
Voltage - Supply: 3V ~ 3.8V
Operating Temperature: -40°C ~ 85°C
Input: LVDS, NECL, PECL
Type: Clock Generator
Frequency - Max: 1.5GHz
Output: ECL
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 16SOIC
Number of Circuits: 1
Part Status: Obsolete
Divider/Multiplier: Yes/No
PLL: No
Supplier Device Package: 16-SOIC
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:4
Voltage - Supply: 3V ~ 3.8V
Operating Temperature: -40°C ~ 85°C
Input: LVDS, NECL, PECL
Type: Clock Generator
Frequency - Max: 1.5GHz
Output: ECL
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 123+ | 4.38 EUR |
| 2SD2198S-DL-E |
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 319+ | 1.69 EUR |
| NRVUS1KFA |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 800V 1A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 800V 1A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC74AFL1 |
![]() |
Hersteller: onsemi
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 44115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| MC74HC74AFR1 |
![]() |
Hersteller: onsemi
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| MC74HC74AFR2 |
![]() |
Hersteller: onsemi
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| SCHC74ADTR2G |
Hersteller: onsemi
Description: SCHC74ADTR2G
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: SCHC74ADTR2G
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FPF2G120BF07ASP |
![]() |
Hersteller: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Package / Case: Module
Packaging: Bulk
IGBT Type: Field Stop
Supplier Device Package: F2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 Independent
Input: Standard
Mounting Type: Through Hole
Current - Collector Cutoff (Max): 250 µA
Power - Max: 156 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Description: IGBT MODULE 650V 40A 156W F2
Package / Case: Module
Packaging: Bulk
IGBT Type: Field Stop
Supplier Device Package: F2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 Independent
Input: Standard
Mounting Type: Through Hole
Current - Collector Cutoff (Max): 250 µA
Power - Max: 156 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 203.1 EUR |
| NTD110N02RG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 24V 12.5A/110A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 24V 12.5A/110A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 680+ | 0.84 EUR |
| NTD110N02R-001G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 24V 12.5A/110A IPAK
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Description: MOSFET N-CH 24V 12.5A/110A IPAK
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
auf Bestellung 17861 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 683+ | 0.84 EUR |
| 1N5253BRL |
![]() |
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11539+ | 0.058 EUR |
| MMSZ4712ET1 |
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12000+ | 0.057 EUR |
| MMSZ5238ET1 |
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3620+ | 0.14 EUR |
| 2SB986T |
![]() |
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Part Status: Active
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR, PNP
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Part Status: Active
Packaging: Bulk
auf Bestellung 8943 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2664+ | 0.21 EUR |
| 2SD1348SC-T-ND |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 4A TO-126
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
Description: TRANS NPN 50V 4A TO-126
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
auf Bestellung 40062 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1025+ | 0.56 EUR |
| 2SD1348T |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 4A TO-126
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
Description: TRANS NPN 50V 4A TO-126
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
auf Bestellung 18473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1025+ | 0.56 EUR |
| 2SD1347S |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 683+ | 0.88 EUR |
| 2SD1347T-AE |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 683+ | 0.88 EUR |
| NZ9F6V8ST5G |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 6.8V 200MW SOD923
Description: DIODE ZENER 6.8V 200MW SOD923
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 0.69 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.3 EUR |
| NCP81101BMNTXG |
![]() |
Hersteller: onsemi
Description: IC REG BUCK CTLR 1PH 28QFN
Supplier Device Package: 28-QFN (5x5)
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG BUCK CTLR 1PH 28QFN
Supplier Device Package: 28-QFN (5x5)
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3937 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.44 EUR |
| 10+ | 3.08 EUR |
| 25+ | 2.9 EUR |
| 100+ | 2.48 EUR |
| 250+ | 2.33 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.69 EUR |
| NCV8164CMTW290TAG |
Hersteller: onsemi
Description: IC REG LINEAR 2.9V 300MA 6WDFNW
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Grade: Automotive
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 2.9V
Supplier Device Package: 6-WDFNW (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount, Wettable Flank
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.9V 300MA 6WDFNW
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Grade: Automotive
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 2.9V
Supplier Device Package: 6-WDFNW (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount, Wettable Flank
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LC06511D02MXTAG |
Hersteller: onsemi
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Fault Protection: Over Current, Over Temperature
Supplier Device Package: 6-X2DFN (1.4x1.4)
Battery Chemistry: Lithium Ion/Polymer
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Fault Protection: Over Current, Over Temperature
Supplier Device Package: 6-X2DFN (1.4x1.4)
Battery Chemistry: Lithium Ion/Polymer
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS5D1N06HLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.13 EUR |
| 3000+ | 1.07 EUR |
| NVTFS6H888NLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Vgs(th) (Max) @ Id: 2V @ 15µA
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Vgs(th) (Max) @ Id: 2V @ 15µA
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.51 EUR |
| 3000+ | 0.48 EUR |
| 4500+ | 0.45 EUR |
| 7500+ | 0.43 EUR |
| 10500+ | 0.42 EUR |
| 15000+ | 0.39 EUR |
| NTTFS6H880NLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.45 EUR |
| 3000+ | 0.42 EUR |
| 4500+ | 0.39 EUR |
| NTTFS6H860NLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.51 EUR |
| 3000+ | 0.48 EUR |
| 4500+ | 0.45 EUR |
| 7500+ | 0.43 EUR |
| 10500+ | 0.4 EUR |
| NTTFS6H854NLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 10A/41A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 10A/41A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.61 EUR |
| NVTFS6H860NLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.87 EUR |
| 3000+ | 0.81 EUR |
| NVTFS6H880NLWFTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
FET Type: N-Channel
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.62 EUR |
| NVTFS6H860NLWFTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 289500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.75 EUR |
| 3000+ | 0.74 EUR |
| 4500+ | 0.73 EUR |
| NTLJS4D7N03HTAG |
Hersteller: onsemi
Description: MOSFET N-CH 25V 11.6A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 11.6A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS8D1N08HTAG |
Hersteller: onsemi
Description: MOSFET N-CH 80V 14A/61A 8WDFN
Description: MOSFET N-CH 80V 14A/61A 8WDFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NRVTSM260EV2T1G |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.21 EUR |
| NRVTSM260EV2T1G |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
auf Bestellung 13622 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 32+ | 0.65 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| NTLJS4D9N03HTAG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.5A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9.5A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV59745AMW1015TAG |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 1.015V 3A 20-QFNW
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.4V @ 3A
PSRR: 75dB ~ 18dB (1kHz ~ 3MHz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.015V
Supplier Device Package: 20-QFNW (4x4)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 3A
Mounting Type: Surface Mount, Wettable Flank
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Type: Fixed
Package / Case: 20-VFQFN Exposed Pad
Description: IC REG LINEAR 1.015V 3A 20-QFNW
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.4V @ 3A
PSRR: 75dB ~ 18dB (1kHz ~ 3MHz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.015V
Supplier Device Package: 20-QFNW (4x4)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 3A
Mounting Type: Surface Mount, Wettable Flank
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Type: Fixed
Package / Case: 20-VFQFN Exposed Pad
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.07 EUR |
| 6000+ | 2.03 EUR |
| NCV8187AMT110TAG |
Hersteller: onsemi
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Protection Features: Over Current, Over Temperature
PSRR: 75dB (1kHz)
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.1V
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Output: 1.2A
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Protection Features: Over Current, Over Temperature
PSRR: 75dB (1kHz)
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.1V
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Output: 1.2A
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.51 EUR |
| 6000+ | 0.49 EUR |
| NCV8187AMTW110TAG |
Hersteller: onsemi
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
PSRR: 75dB (1kHz)
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.1V
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
PSRR: 75dB (1kHz)
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.1V
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP114AMX090TAG |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 0.9V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
| MBRS2040LT3 |
![]() |
Hersteller: onsemi
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
auf Bestellung 17768 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2219+ | 0.27 EUR |
| MC33567D-002 |
![]() |
Hersteller: onsemi
Description: LDO CNTRLR REG 2.525V 8PIN SOIC
Part Status: Active
Packaging: Bulk
Number of Outputs: 2
Supplier Device Package: 8-SOIC
Current - Supply: 6.3mA
Operating Temperature: 0°C ~ 80°C
Type: Positive Fixed
Voltage - Input: 9V ~ 12.5V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description: LDO CNTRLR REG 2.525V 8PIN SOIC
Part Status: Active
Packaging: Bulk
Number of Outputs: 2
Supplier Device Package: 8-SOIC
Current - Supply: 6.3mA
Operating Temperature: 0°C ~ 80°C
Type: Positive Fixed
Voltage - Input: 9V ~ 12.5V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 1862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 790+ | 0.7 EUR |
| VMC10E111FNR2 |
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 94+ | 6.27 EUR |
| VMC10E111FN |
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 8.76 EUR |
| NTHS4111PT1 |
![]() |
auf Bestellung 24600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1480+ | 0.4 EUR |
| NTHS4111PT1G |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 30V 3.3A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Bulk
Description: MOSFET P-CH 30V 3.3A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Bulk
auf Bestellung 1562 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1562+ | 0.4 EUR |
| MC100EL16DR2 |
![]() |
Hersteller: onsemi
Description: IC RCVR ECL DIFFERENTL 5V 8-SOIC
Supplier Device Package: 8-SOIC
Supply Voltage: 4.2V ~ 5.7V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver
Number of Bits: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC RCVR ECL DIFFERENTL 5V 8-SOIC
Supplier Device Package: 8-SOIC
Supply Voltage: 4.2V ~ 5.7V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver
Number of Bits: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 8930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 207+ | 2.78 EUR |
| MC100EL16DTG |
![]() |
Hersteller: onsemi
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Supplier Device Package: 8-TSSOP
Supply Voltage: 4.2V ~ 5.7V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver
Number of Bits: 1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Supplier Device Package: 8-TSSOP
Supply Voltage: 4.2V ~ 5.7V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver
Number of Bits: 1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
auf Bestellung 3513 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 6.19 EUR |
| MBRD340T4 |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 3A DPAK
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: DIODE SCHOTTKY 40V 3A DPAK
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 156708 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1402+ | 0.42 EUR |
| MBRD320T4 |
![]() |
Hersteller: onsemi
Description: DEVELOPMENT KITS/ACCESSORIES
Description: DEVELOPMENT KITS/ACCESSORIES
auf Bestellung 101950 Stücke:
Lieferzeit 10-14 Tag (e)
| SN74LS32ML1 |
![]() |
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| CAT25080YI-G-ON |
![]() |
Hersteller: onsemi
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Memory Organization: 1K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Memory Organization: 1K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZP40142RL |
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1397+ | 0.38 EUR |


































