| Foto | Bezeichnung | Hersteller | Beschreibung |
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RB751S40P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
Produkt ist nicht verfügbar |
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LB1960M-TLM-H | onsemi |
Description: OPTICAL SENSOR AMBIENT 540NM I2C Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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FW297-TL-2W | onsemi |
Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FW297-TL-2W | onsemi |
Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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EFC4615R-TR | onsemi |
Description: MOSFET N-CH 24V 6A EFCPPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, FCBGA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: EFCP1515-4CC-037 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAS25160LI-G-DF | onsemi |
Description: CAS25160 - 16KB SPI SER CMOS EEP Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 188900 Stücke: Lieferzeit 10-14 Tag (e) |
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| SVC251SPA-AC | onsemi |
Description: VARIABLE-CAPACITANCE DIODEPackaging: Bulk Package / Case: 2-SIP Mounting Type: Through Hole Diode Type: Single Operating Temperature: 100°C (TJ) Voltage - Peak Reverse (Max): 12 V Capacitance Ratio: 1.7 Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz Capacitance Ratio Condition: C1.6/C5 Supplier Device Package: 2-SPA |
auf Bestellung 233571 Stücke: Lieferzeit 10-14 Tag (e) |
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| SVC233-TB-E-ON | onsemi |
Description: VARIABLE-CAPACITANCE DIODE (IOCA Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74HCT573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 7.2mA, 7.2mA Delay Time - Propagation: 17ns Supplier Device Package: 20-TSSOP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HCT573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 7.2mA, 7.2mA Delay Time - Propagation: 17ns Supplier Device Package: 20-TSSOP Part Status: Active |
auf Bestellung 2344 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDT3612-SN00151 | onsemi | Description: MOSFET N-CH 100V SOT223 |
Produkt ist nicht verfügbar |
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| LV8081GQ-TE-L-E | onsemi |
Description: TWO CHANNELS CONSTANT-CURRENT H- Packaging: Bulk Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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LV56081GP-TE-L-E | onsemi |
Description: IC REG CHG PUMP -5.5V DL 24VCT Packaging: Bulk Package / Case: 24-WFQFN Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 2 Function: Ratiometric Current - Output: 20mA Operating Temperature: -20°C ~ 80°C Output Configuration: Positive and Negative Frequency - Switching: 2MHz Voltage - Input (Max): 3.45V Topology: Charge Pump Supplier Device Package: 24-VCT (3.5x3.5) Synchronous Rectifier: Yes Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): -5.5V, 15V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5302G | onsemi |
Description: TRANS NPN 60V 30A TO204Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-204 (TO-3) Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 W |
auf Bestellung 1330 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5237ET1G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD123 |
auf Bestellung 10263 Stücke: Lieferzeit 10-14 Tag (e) |
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| SZMMSZ5245CT1G | onsemi | Description: ZENER DIODE 500 MW SOD-123 |
Produkt ist nicht verfügbar |
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNELPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNELPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1178 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V |
auf Bestellung 5930 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6944 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 32A/298A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 32A/298A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V |
auf Bestellung 13400 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86062-F085 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86062-F085 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V |
auf Bestellung 3796 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0200N100 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0200N100 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V |
auf Bestellung 4068 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86063-F085 | onsemi |
Description: MOSFET N-CH 100V 240A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86063-F085 | onsemi |
Description: MOSFET N-CH 100V 240A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V |
auf Bestellung 3965 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBL095N65S3H | onsemi |
Description: SUPERFET3 FAST 95MOHM TOLLPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP4304AMNTWG | onsemi |
Description: IC SEC SIDE SYNC RECT DRV 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9.5V ~ 30V Applications: Secondary-Side Controller Supplier Device Package: 8-DFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP2817BFCCT2G | onsemi |
Description: IC AMP AB STEREO 42MW 12FLIPCHIPPackaging: Cut Tape (CT) Features: Depop Package / Case: 12-UFBGA, FCBGA Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm Supplier Device Package: 12-FlipChip (1.62x1.22) Part Status: Not For New Designs |
auf Bestellung 2924 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H175FN | onsemi |
Description: IC DTYPE LATCH QUINT 20PLCC |
auf Bestellung 2530 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H130FNG | onsemi |
Description: IC S-R LATCH DUAL 20PLCC |
auf Bestellung 3063 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H130FNR2 | onsemi |
Description: IC S-R LATCH DUAL 20PLCC |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H175FNR2 | onsemi |
Description: IC DTYPE LATCH QUINT 20PLCC |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV4276CDTADJT5G | onsemi |
Description: IC REG LIN POS ADJ 400MA DPAK-5Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: DPAK-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Grade: Automotive PSRR: 70dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV4276CDTADJT5G | onsemi |
Description: IC REG LIN POS ADJ 400MA DPAK-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: DPAK-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Grade: Automotive PSRR: 70dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
auf Bestellung 1426 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10E446FNG | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10E446FNR2 | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10E446FNR2G | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 7630 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100E446FN | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 1715 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100E446FNR2G | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 3221 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100E446FNG | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 2479 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10E446FN | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1689E-AA | onsemi |
Description: 2SA1689 - SMALL SIGNAL BIPOLAR TPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C Frequency - Transition: 70MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 600 mW |
auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1435-AA | onsemi |
Description: TRANS NPN 25V 0.3A TO-220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 600 mW |
auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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SESD5481MUT5G | onsemi |
Description: TVS DIODE 5VWM 15VC 2X3DFNPackaging: Bulk Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 15V Power Line Protection: No |
auf Bestellung 5925000 Stücke: Lieferzeit 10-14 Tag (e) |
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SESD9X5.0JT5G | onsemi |
Description: TVS DIODE SOD923 Packaging: Bulk Package / Case: SOD-923 Mounting Type: Surface Mount Supplier Device Package: SOD-923 |
auf Bestellung 184000 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGHL75T65SQDT | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/106ns Switching Energy: 2.12mJ (on), 1.14mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 136 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 379128 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGHL75T65SQD | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/106ns Switching Energy: 1.86mJ (on), 1.13mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 136 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8868 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGHL75T65SQ | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/106ns Switching Energy: 1.86mJ (on), 1.13mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 139 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 13653 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL75T65MQD | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/176ns Switching Energy: 1.94mJ (on), 1.55mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 145 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
auf Bestellung 17920 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5172GD8G | onsemi |
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC |
auf Bestellung 6138 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5172ED8G | onsemi |
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC |
auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
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MPS5172RLRMG | onsemi |
Description: TRANS NPN 25V 0.1A TO-92 |
auf Bestellung 31152 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV214RSQT2G | onsemi |
Description: IC CURRENT SENSE 1 CIRCUIT SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 40µA Slew Rate: 1V/µs Current - Input Bias: 39 µA Voltage - Input Offset: 1 µV Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Number of Circuits: 1 -3db Bandwidth: 60 kHz Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 26 V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV214RSQT2G | onsemi |
Description: IC CURRENT SENSE 1 CIRCUIT SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 40µA Slew Rate: 1V/µs Current - Input Bias: 39 µA Voltage - Input Offset: 1 µV Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Number of Circuits: 1 -3db Bandwidth: 60 kHz Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 26 V Qualification: AEC-Q100 |
auf Bestellung 8181 Stücke: Lieferzeit 10-14 Tag (e) |
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| FSAM50SM60G | onsemi |
Description: MOTION-SPMTM (SMART POWER MODULEPackaging: Bulk Package / Case: 32-PowerDIP Module (1.370", 34.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 50 A Voltage: 600 V |
auf Bestellung 801 Stücke: Lieferzeit 10-14 Tag (e) |
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| RB751S40P2T5G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 30V 30MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FW297-TL-2W |
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Hersteller: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FW297-TL-2W |
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Hersteller: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| EFC4615R-TR |
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Hersteller: onsemi
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.23 EUR |
| CAS25160LI-G-DF |
Hersteller: onsemi
Description: CAS25160 - 16KB SPI SER CMOS EEP
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: CAS25160 - 16KB SPI SER CMOS EEP
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 188900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 666+ | 0.74 EUR |
| SVC251SPA-AC |
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Hersteller: onsemi
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Package / Case: 2-SIP
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 100°C (TJ)
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 1.7
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio Condition: C1.6/C5
Supplier Device Package: 2-SPA
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Package / Case: 2-SIP
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 100°C (TJ)
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 1.7
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio Condition: C1.6/C5
Supplier Device Package: 2-SPA
auf Bestellung 233571 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2959+ | 0.16 EUR |
| SVC233-TB-E-ON |
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 683+ | 0.71 EUR |
| MM74HCT573MTCX |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT573MTCX |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2344 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 28+ | 0.64 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.5 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.43 EUR |
| FDT3612-SN00151 |
Hersteller: onsemi
Description: MOSFET N-CH 100V SOT223
Description: MOSFET N-CH 100V SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LV8081GQ-TE-L-E |
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 902+ | 0.58 EUR |
| LV56081GP-TE-L-E |
Hersteller: onsemi
Description: IC REG CHG PUMP -5.5V DL 24VCT
Packaging: Bulk
Package / Case: 24-WFQFN
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Ratiometric
Current - Output: 20mA
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive and Negative
Frequency - Switching: 2MHz
Voltage - Input (Max): 3.45V
Topology: Charge Pump
Supplier Device Package: 24-VCT (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): -5.5V, 15V
Description: IC REG CHG PUMP -5.5V DL 24VCT
Packaging: Bulk
Package / Case: 24-WFQFN
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Ratiometric
Current - Output: 20mA
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive and Negative
Frequency - Switching: 2MHz
Voltage - Input (Max): 3.45V
Topology: Charge Pump
Supplier Device Package: 24-VCT (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): -5.5V, 15V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 4.2 EUR |
| 2N5302G |
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Hersteller: onsemi
Description: TRANS NPN 60V 30A TO204
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
Description: TRANS NPN 60V 30A TO204
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 7.57 EUR |
| MMSZ5237ET1G |
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Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
auf Bestellung 10263 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4199+ | 0.11 EUR |
| SZMMSZ5245CT1G |
Hersteller: onsemi
Description: ZENER DIODE 500 MW SOD-123
Description: ZENER DIODE 500 MW SOD-123
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D7N08H |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D7N08H |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.59 EUR |
| 10+ | 5.06 EUR |
| 100+ | 4.15 EUR |
| 500+ | 4.07 EUR |
| NTBLS1D7N08H |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 4.06 EUR |
| NTBLS1D7N08H |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
auf Bestellung 5930 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.34 EUR |
| 10+ | 7 EUR |
| 100+ | 5.67 EUR |
| 500+ | 5.04 EUR |
| 1000+ | 4.31 EUR |
| NVBLS1D1N08H |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 5.85 EUR |
| NVBLS1D1N08H |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6944 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.27 EUR |
| 10+ | 9.07 EUR |
| 100+ | 7.16 EUR |
| NTBLS1D5N08MC |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 5.92 EUR |
| NTBLS1D5N08MC |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
auf Bestellung 13400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.39 EUR |
| 10+ | 9.16 EUR |
| 100+ | 7.25 EUR |
| FDBL86062-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 5.84 EUR |
| FDBL86062-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 3796 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.98 EUR |
| 10+ | 9.41 EUR |
| 100+ | 7.85 EUR |
| 500+ | 6.92 EUR |
| 1000+ | 6.23 EUR |
| FDBL0200N100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 5.85 EUR |
| FDBL0200N100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
auf Bestellung 4068 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.31 EUR |
| 10+ | 7.97 EUR |
| 100+ | 7.16 EUR |
| FDBL86063-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 5.53 EUR |
| FDBL86063-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
auf Bestellung 3965 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.57 EUR |
| 10+ | 8.53 EUR |
| 100+ | 6.26 EUR |
| 500+ | 5.53 EUR |
| NTBL095N65S3H |
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Hersteller: onsemi
Description: SUPERFET3 FAST 95MOHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Description: SUPERFET3 FAST 95MOHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4304AMNTWG |
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Hersteller: onsemi
Description: IC SEC SIDE SYNC RECT DRV 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Applications: Secondary-Side Controller
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC SEC SIDE SYNC RECT DRV 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Applications: Secondary-Side Controller
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.62 EUR |
| 10+ | 2.35 EUR |
| 25+ | 2.22 EUR |
| 100+ | 1.89 EUR |
| 250+ | 1.77 EUR |
| 500+ | 1.55 EUR |
| NCP2817BFCCT2G |
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Hersteller: onsemi
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
auf Bestellung 2924 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 15+ | 1.23 EUR |
| 25+ | 1.16 EUR |
| 100+ | 0.94 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.6 EUR |
| MC10H175FN |
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Hersteller: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
Description: IC DTYPE LATCH QUINT 20PLCC
auf Bestellung 2530 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 4.63 EUR |
| MC10H130FNG |
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Hersteller: onsemi
Description: IC S-R LATCH DUAL 20PLCC
Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3063 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 6.25 EUR |
| MC10H130FNR2 |
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Hersteller: onsemi
Description: IC S-R LATCH DUAL 20PLCC
Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 6.25 EUR |
| MC10H175FNR2 |
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Hersteller: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
Description: IC DTYPE LATCH QUINT 20PLCC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 4.63 EUR |
| NCV4276CDTADJT5G |
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Hersteller: onsemi
Description: IC REG LIN POS ADJ 400MA DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 400MA DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV4276CDTADJT5G |
![]() |
Hersteller: onsemi
Description: IC REG LIN POS ADJ 400MA DPAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 400MA DPAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
auf Bestellung 1426 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 12+ | 1.52 EUR |
| 25+ | 1.38 EUR |
| 100+ | 1.22 EUR |
| 250+ | 1.15 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 1.07 EUR |
| MC10E446FNG |
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Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 9.48 EUR |
| MC10E446FNR2 |
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Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 5.87 EUR |
| MC10E446FNR2G |
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Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 7630 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 9.48 EUR |
| MC100E446FN |
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Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 1715 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 5.87 EUR |
| MC100E446FNR2G |
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Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 3221 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 9.48 EUR |
| MC100E446FNG |
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Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 9.48 EUR |
| MC10E446FN |
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Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 5.87 EUR |
| 2SA1689E-AA |
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Hersteller: onsemi
Description: 2SA1689 - SMALL SIGNAL BIPOLAR T
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C
Frequency - Transition: 70MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 600 mW
Description: 2SA1689 - SMALL SIGNAL BIPOLAR T
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C
Frequency - Transition: 70MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 600 mW
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1268+ | 0.39 EUR |
| 2SA1435-AA |
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Hersteller: onsemi
Description: TRANS NPN 25V 0.3A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
Description: TRANS NPN 25V 0.3A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1069+ | 0.43 EUR |
| SESD5481MUT5G |
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Hersteller: onsemi
Description: TVS DIODE 5VWM 15VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Description: TVS DIODE 5VWM 15VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
auf Bestellung 5925000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6985+ | 0.065 EUR |
| SESD9X5.0JT5G |
Hersteller: onsemi
Description: TVS DIODE SOD923
Packaging: Bulk
Package / Case: SOD-923
Mounting Type: Surface Mount
Supplier Device Package: SOD-923
Description: TVS DIODE SOD923
Packaging: Bulk
Package / Case: SOD-923
Mounting Type: Surface Mount
Supplier Device Package: SOD-923
auf Bestellung 184000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3742+ | 0.12 EUR |
| AFGHL75T65SQDT |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/106ns
Switching Energy: 2.12mJ (on), 1.14mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/106ns
Switching Energy: 2.12mJ (on), 1.14mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 379128 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.39 EUR |
| 30+ | 6.59 EUR |
| 120+ | 5.53 EUR |
| 510+ | 4.81 EUR |
| AFGHL75T65SQD |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8868 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.92 EUR |
| 30+ | 6.92 EUR |
| 120+ | 5.82 EUR |
| 510+ | 5.1 EUR |
| AFGHL75T65SQ |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13653 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.77 EUR |
| 30+ | 5.58 EUR |
| 120+ | 4.66 EUR |
| 510+ | 3.98 EUR |
| 1020+ | 3.92 EUR |
| FGHL75T65MQD |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/176ns
Switching Energy: 1.94mJ (on), 1.55mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/176ns
Switching Energy: 1.94mJ (on), 1.55mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 17920 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.89 EUR |
| 10+ | 7.37 EUR |
| 450+ | 4.57 EUR |
| 900+ | 4.53 EUR |
| CS5172GD8G |
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Hersteller: onsemi
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
auf Bestellung 6138 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 321+ | 1.53 EUR |
| CS5172ED8G |
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Hersteller: onsemi
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 349+ | 1.56 EUR |
| MPS5172RLRMG |
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Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO-92
Description: TRANS NPN 25V 0.1A TO-92
auf Bestellung 31152 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9616+ | 0.049 EUR |
| NCV214RSQT2G |
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Hersteller: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.61 EUR |
| NCV214RSQT2G |
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Hersteller: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Qualification: AEC-Q100
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Qualification: AEC-Q100
auf Bestellung 8181 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 19+ | 0.96 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.76 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.65 EUR |
| FSAM50SM60G |
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Hersteller: onsemi
Description: MOTION-SPMTM (SMART POWER MODULE
Packaging: Bulk
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 600 V
Description: MOTION-SPMTM (SMART POWER MODULE
Packaging: Bulk
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 600 V
auf Bestellung 801 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 85.42 EUR |

















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