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2SC4710LS 2SC4710LS onsemi Description: 2SC4710LS - POWER BIPOLAR TRANSI
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK3495 onsemi SNYOS18985-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL SMALL SIGNAL MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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P6SMB47AT3G P6SMB47AT3G onsemi ONSM-S-A0001810395-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 40.2VWM 64.8VC SMB
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NTMFS5C628NT1G NTMFS5C628NT1G onsemi ntmfs5c628n-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
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1500+0.75 EUR
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NCP337FCT2G NCP337FCT2G onsemi ncp336-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20Ohm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Part Status: Active
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NCP367OPMUEOTBG NCP367OPMUEOTBG onsemi ncp367-d.pdf Description: IC VOLT PROTECTION OCP OVP 8DFN
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 1.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 28V
Applications: Overvoltage Protection Controller, Current Limit
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 42 µA
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FDMF5821 onsemi fdmf5821-d.pdf Description: 2MHZ SMART POWER STAGE (SPS)
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Active
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FDD3860-G onsemi Description: 100V N-CHANNEL POWERTRENCH MOSFE
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NVMTS1D2N08H NVMTS1D2N08H onsemi nvmts1d2n08h-d.pdf Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMTS1D2N08H NVMTS1D2N08H onsemi nvmts1d2n08h-d.pdf Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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FDWS9508L_F085 FDWS9508L_F085 onsemi fdws9508l-f085-d.pdf Description: MOSFET P-CH 40V 80A 8PQFN
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BAS116LT3G BAS116LT3G onsemi bas116lt1-d.pdf Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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SE81NLV74HC14ADTR2G SE81NLV74HC14ADTR2G onsemi Description: 74HC14 - HEX SCHMITT-TRIGGER INV
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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N57M5114WD50TG N57M5114WD50TG onsemi design-resources?notFound=N57M5114-D.PDF Description: IC DGTL POT 50KOHM 32TAP 8SOIC
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N57M5114WD10TG N57M5114WD10TG onsemi design-resources?notFound=N57M5114-D.PDF Description: IC DGTL POT 10KOHM 32TAP 8SOIC
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NXH50C120L2C2ESG NXH50C120L2C2ESG onsemi Description: IGBT MODULE, CIB 1200 V, 50 A IG
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 11.897 nF @ 20 V
Produkt ist nicht verfügbar
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L5431-AA-E onsemi Description: L5431-AA-E
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DVK-SFUS-API-1-GEVK DVK-SFUS-API-1-GEVK onsemi ax-sfus-d.pdf Description: EVAL BOARD SIGFOX AX-SFUS-API
Packaging: Bulk
Frequency: 900MHz
Type: Transceiver
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: AX-SFUS-API
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DVK-SFEU-API-1-GEVK DVK-SFEU-API-1-GEVK onsemi DVK-SFEU-API-1-GEVK_Web.pdf Description: EVAL BOARD SIGFOX AX-SFEU-API
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FDS3512 FDS3512 onsemi fds3512-d.pdf Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
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10+4.32 EUR
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MC74VHC1G14DBVT1G MC74VHC1G14DBVT1G onsemi mc74vhc1g14-d.pdf Description: IC INVERT SCHMITT 1CH 1INP SC74A
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-74A
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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15000+0.044 EUR
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MC74VHC1G14DBVT1G MC74VHC1G14DBVT1G onsemi mc74vhc1g14-d.pdf Description: IC INVERT SCHMITT 1CH 1INP SC74A
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-74A
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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MC74VHC1G14MU2TCG MC74VHC1G14MU2TCG onsemi mc74vhc1g14-d.pdf Description: IC INVERT SCHMITT
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SLJ74VHC1G14DFT2G onsemi Description: IC REG LINEAR
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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RB751S40P2T5G RB751S40P2T5G onsemi rb751s40-d.pdf Description: DIODE SCHOTTKY 30V 30MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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LB1960M-TLM-H LB1960M-TLM-H onsemi Description: OPTICAL SENSOR AMBIENT 540NM I2C
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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FW297-TL-2W FW297-TL-2W onsemi fw297-d.pdf Description: MOSFET 2N-CH 60V 4.5A 8SOIC
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FW297-TL-2W FW297-TL-2W onsemi fw297-d.pdf Description: MOSFET 2N-CH 60V 4.5A 8SOIC
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EFC4615R-TR EFC4615R-TR onsemi EFC4615R.pdf Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
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CAS25160LI-G-DF onsemi Description: CAS25160 - 16KB SPI SER CMOS EEP
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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SVC251SPA-AC onsemi SNYOD004-81.pdf?t.download=true&u=5oefqw Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Package / Case: 2-SIP
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 100°C (TJ)
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 1.7
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio Condition: C1.6/C5
Supplier Device Package: 2-SPA
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SVC233-TB-E-ON onsemi Description: VARIABLE-CAPACITANCE DIODE (IOCA
Packaging: Bulk
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MM74HCT573MTCX MM74HCT573MTCX onsemi mm74hct573-d.pdf Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
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MM74HCT573MTCX MM74HCT573MTCX onsemi mm74hct573-d.pdf Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
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31+0.57 EUR
100+0.5 EUR
250+0.46 EUR
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1000+0.43 EUR
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FDT3612-SN00151 onsemi Description: MOSFET N-CH 100V SOT223
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LV8081GQ-TE-L-E onsemi Description: TWO CHANNELS CONSTANT-CURRENT H-
Packaging: Bulk
Part Status: Active
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LV56081GP-TE-L-E LV56081GP-TE-L-E onsemi Description: IC REG CHG PUMP -5.5V DL 24VCT
Packaging: Bulk
Package / Case: 24-WFQFN
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Ratiometric
Current - Output: 20mA
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive and Negative
Frequency - Switching: 2MHz
Voltage - Input (Max): 3.45V
Topology: Charge Pump
Supplier Device Package: 24-VCT (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): -5.5V, 15V
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2N5302G 2N5302G onsemi 2n5302-d.pdf Description: TRANS NPN 60V 30A TO204
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
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MMSZ5237ET1G MMSZ5237ET1G onsemi mmsz5221et1-d.pdf Description: DIODE ZENER 8.2V 500MW SOD123
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SZMMSZ5245CT1G onsemi Description: ZENER DIODE 500 MW SOD-123
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NVBLS1D7N08H NVBLS1D7N08H onsemi nvbls1d7n08h-d.pdf Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBLS1D7N08H NVBLS1D7N08H onsemi nvbls1d7n08h-d.pdf Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1178 Stücke:
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NTBLS1D7N08H NTBLS1D7N08H onsemi ntbls1d7n08h-d.pdf Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
auf Bestellung 4000 Stücke:
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NTBLS1D7N08H NTBLS1D7N08H onsemi ntbls1d7n08h-d.pdf Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
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NVBLS1D1N08H NVBLS1D1N08H onsemi nvbls1d1n08h-d.pdf Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
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NVBLS1D1N08H NVBLS1D1N08H onsemi nvbls1d1n08h-d.pdf Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
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NTBLS1D5N08MC NTBLS1D5N08MC onsemi ntbls1d5n08mc-d.pdf Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
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NTBLS1D5N08MC NTBLS1D5N08MC onsemi ntbls1d5n08mc-d.pdf Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
auf Bestellung 13400 Stücke:
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2+13.39 EUR
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FDBL86062-F085 FDBL86062-F085 onsemi fdbl86062_f085-d.pdf Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 2000 Stücke:
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2000+5.84 EUR
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FDBL86062-F085 FDBL86062-F085 onsemi fdbl86062_f085-d.pdf Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 3796 Stücke:
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FDBL0200N100 FDBL0200N100 onsemi fdbl0200n100-d.pdf Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
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FDBL0200N100 FDBL0200N100 onsemi fdbl0200n100-d.pdf Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
auf Bestellung 4068 Stücke:
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FDBL86063-F085 FDBL86063-F085 onsemi fdbl86063_f085-d.pdf Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
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FDBL86063-F085 FDBL86063-F085 onsemi fdbl86063_f085-d.pdf Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
auf Bestellung 3965 Stücke:
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NTBL095N65S3H NTBL095N65S3H onsemi ntbl095n65s3h-d.pdf Description: SUPERFET3 FAST 95MOHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Produkt ist nicht verfügbar
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NCP4304AMNTWG NCP4304AMNTWG onsemi ncp4304-d.pdf Description: IC SEC SIDE SYNC RECT DRV 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Applications: Secondary-Side Controller
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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NCP2817BFCCT2G NCP2817BFCCT2G onsemi ncp2817-d.pdf Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
auf Bestellung 2924 Stücke:
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15+1.23 EUR
25+1.16 EUR
100+0.94 EUR
250+0.88 EUR
500+0.75 EUR
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MC10H175FN MC10H175FN onsemi MC10H175-D.pdf Description: IC DTYPE LATCH QUINT 20PLCC
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MC10H130FNG MC10H130FNG onsemi MC10H130-D.pdf Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3063 Stücke:
Lieferzeit 10-14 Tag (e)
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MC10H130FNR2 MC10H130FNR2 onsemi MC10H130-D.pdf Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3000 Stücke:
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2SC4710LS
2SC4710LS
Hersteller: onsemi
Description: 2SC4710LS - POWER BIPOLAR TRANSI
Packaging: Bulk
Produkt ist nicht verfügbar
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2SK3495 SNYOS18985-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: N-CHANNEL SMALL SIGNAL MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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P6SMB47AT3G ONSM-S-A0001810395-1.pdf?t.download=true&u=5oefqw
P6SMB47AT3G
Hersteller: onsemi
Description: TVS DIODE 40.2VWM 64.8VC SMB
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Anzahl Preis
1312+0.41 EUR
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NTMFS5C628NT1G ntmfs5c628n-d.pdf
NTMFS5C628NT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
auf Bestellung 1500 Stücke:
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Anzahl Preis
1500+0.75 EUR
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NCP337FCT2G ncp336-d.pdf
NCP337FCT2G
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20Ohm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Part Status: Active
auf Bestellung 13358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
858+0.58 EUR
Mindestbestellmenge: 858
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NCP367OPMUEOTBG ncp367-d.pdf
NCP367OPMUEOTBG
Hersteller: onsemi
Description: IC VOLT PROTECTION OCP OVP 8DFN
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 1.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 28V
Applications: Overvoltage Protection Controller, Current Limit
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 42 µA
auf Bestellung 11000 Stücke:
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Anzahl Preis
814+0.61 EUR
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FDMF5821 fdmf5821-d.pdf
Hersteller: onsemi
Description: 2MHZ SMART POWER STAGE (SPS)
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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FDD3860-G
Hersteller: onsemi
Description: 100V N-CHANNEL POWERTRENCH MOSFE
Produkt ist nicht verfügbar
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NVMTS1D2N08H nvmts1d2n08h-d.pdf
NVMTS1D2N08H
Hersteller: onsemi
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+4.39 EUR
Mindestbestellmenge: 3000
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NVMTS1D2N08H nvmts1d2n08h-d.pdf
NVMTS1D2N08H
Hersteller: onsemi
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17263 Stücke:
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Anzahl Preis
2+10.68 EUR
10+7.22 EUR
100+5.37 EUR
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FDWS9508L_F085 fdws9508l-f085-d.pdf
FDWS9508L_F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 80A 8PQFN
Produkt ist nicht verfügbar
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BAS116LT3G bas116lt1-d.pdf
BAS116LT3G
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 444004 Stücke:
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Anzahl Preis
9072+0.049 EUR
Mindestbestellmenge: 9072
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SE81NLV74HC14ADTR2G
SE81NLV74HC14ADTR2G
Hersteller: onsemi
Description: 74HC14 - HEX SCHMITT-TRIGGER INV
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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N57M5114WD50TG design-resources?notFound=N57M5114-D.PDF
N57M5114WD50TG
Hersteller: onsemi
Description: IC DGTL POT 50KOHM 32TAP 8SOIC
Produkt ist nicht verfügbar
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N57M5114WD10TG design-resources?notFound=N57M5114-D.PDF
N57M5114WD10TG
Hersteller: onsemi
Description: IC DGTL POT 10KOHM 32TAP 8SOIC
Produkt ist nicht verfügbar
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NXH50C120L2C2ESG
NXH50C120L2C2ESG
Hersteller: onsemi
Description: IGBT MODULE, CIB 1200 V, 50 A IG
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 11.897 nF @ 20 V
Produkt ist nicht verfügbar
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L5431-AA-E
Hersteller: onsemi
Description: L5431-AA-E
Produkt ist nicht verfügbar
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DVK-SFUS-API-1-GEVK ax-sfus-d.pdf
DVK-SFUS-API-1-GEVK
Hersteller: onsemi
Description: EVAL BOARD SIGFOX AX-SFUS-API
Packaging: Bulk
Frequency: 900MHz
Type: Transceiver
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: AX-SFUS-API
auf Bestellung 2 Stücke:
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Anzahl Preis
1+614.1 EUR
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DVK-SFEU-API-1-GEVK DVK-SFEU-API-1-GEVK_Web.pdf
DVK-SFEU-API-1-GEVK
Hersteller: onsemi
Description: EVAL BOARD SIGFOX AX-SFEU-API
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+476.61 EUR
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FDS3512 fds3512-d.pdf
FDS3512
Hersteller: onsemi
Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
auf Bestellung 4594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.8 EUR
10+4.32 EUR
100+3.47 EUR
500+2.85 EUR
1000+2.37 EUR
Mindestbestellmenge: 4
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MC74VHC1G14DBVT1G mc74vhc1g14-d.pdf
MC74VHC1G14DBVT1G
Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP SC74A
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-74A
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.048 EUR
6000+0.046 EUR
9000+0.045 EUR
15000+0.044 EUR
21000+0.043 EUR
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MC74VHC1G14DBVT1G mc74vhc1g14-d.pdf
MC74VHC1G14DBVT1G
Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP SC74A
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-74A
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 36324 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
200+0.088 EUR
232+0.076 EUR
277+0.064 EUR
305+0.058 EUR
500+0.054 EUR
1000+0.051 EUR
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MC74VHC1G14MU2TCG mc74vhc1g14-d.pdf
MC74VHC1G14MU2TCG
Hersteller: onsemi
Description: IC INVERT SCHMITT
Produkt ist nicht verfügbar
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SLJ74VHC1G14DFT2G
Hersteller: onsemi
Description: IC REG LINEAR
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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RB751S40P2T5G rb751s40-d.pdf
RB751S40P2T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Produkt ist nicht verfügbar
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LB1960M-TLM-H
LB1960M-TLM-H
Hersteller: onsemi
Description: OPTICAL SENSOR AMBIENT 540NM I2C
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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FW297-TL-2W fw297-d.pdf
FW297-TL-2W
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Produkt ist nicht verfügbar
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FW297-TL-2W fw297-d.pdf
FW297-TL-2W
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
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EFC4615R-TR EFC4615R.pdf
EFC4615R-TR
Hersteller: onsemi
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.23 EUR
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CAS25160LI-G-DF
Hersteller: onsemi
Description: CAS25160 - 16KB SPI SER CMOS EEP
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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Anzahl Preis
666+0.74 EUR
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SVC251SPA-AC SNYOD004-81.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Package / Case: 2-SIP
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 100°C (TJ)
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 1.7
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio Condition: C1.6/C5
Supplier Device Package: 2-SPA
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Anzahl Preis
2959+0.16 EUR
Mindestbestellmenge: 2959
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SVC233-TB-E-ON
Hersteller: onsemi
Description: VARIABLE-CAPACITANCE DIODE (IOCA
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
683+0.71 EUR
Mindestbestellmenge: 683
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MM74HCT573MTCX mm74hct573-d.pdf
MM74HCT573MTCX
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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MM74HCT573MTCX mm74hct573-d.pdf
MM74HCT573MTCX
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
28+0.64 EUR
31+0.57 EUR
100+0.5 EUR
250+0.46 EUR
500+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 20
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FDT3612-SN00151
Hersteller: onsemi
Description: MOSFET N-CH 100V SOT223
Produkt ist nicht verfügbar
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LV8081GQ-TE-L-E
Hersteller: onsemi
Description: TWO CHANNELS CONSTANT-CURRENT H-
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
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Anzahl Preis
902+0.58 EUR
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LV56081GP-TE-L-E
LV56081GP-TE-L-E
Hersteller: onsemi
Description: IC REG CHG PUMP -5.5V DL 24VCT
Packaging: Bulk
Package / Case: 24-WFQFN
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Ratiometric
Current - Output: 20mA
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive and Negative
Frequency - Switching: 2MHz
Voltage - Input (Max): 3.45V
Topology: Charge Pump
Supplier Device Package: 24-VCT (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): -5.5V, 15V
auf Bestellung 10000 Stücke:
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Anzahl Preis
118+4.2 EUR
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2N5302G 2n5302-d.pdf
2N5302G
Hersteller: onsemi
Description: TRANS NPN 60V 30A TO204
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
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Anzahl Preis
67+7.57 EUR
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MMSZ5237ET1G mmsz5221et1-d.pdf
MMSZ5237ET1G
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
auf Bestellung 10263 Stücke:
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Anzahl Preis
4199+0.11 EUR
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SZMMSZ5245CT1G
Hersteller: onsemi
Description: ZENER DIODE 500 MW SOD-123
Produkt ist nicht verfügbar
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NVBLS1D7N08H nvbls1d7n08h-d.pdf
NVBLS1D7N08H
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBLS1D7N08H nvbls1d7n08h-d.pdf
NVBLS1D7N08H
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.59 EUR
10+5.06 EUR
100+4.15 EUR
500+4.07 EUR
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NTBLS1D7N08H ntbls1d7n08h-d.pdf
NTBLS1D7N08H
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.06 EUR
Mindestbestellmenge: 2000
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NTBLS1D7N08H ntbls1d7n08h-d.pdf
NTBLS1D7N08H
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
auf Bestellung 5930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.34 EUR
10+7 EUR
100+5.67 EUR
500+5.04 EUR
1000+4.31 EUR
Mindestbestellmenge: 3
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NVBLS1D1N08H nvbls1d1n08h-d.pdf
NVBLS1D1N08H
Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.85 EUR
Mindestbestellmenge: 2000
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NVBLS1D1N08H nvbls1d1n08h-d.pdf
NVBLS1D1N08H
Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.27 EUR
10+9.07 EUR
100+7.16 EUR
Mindestbestellmenge: 2
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NTBLS1D5N08MC ntbls1d5n08mc-d.pdf
NTBLS1D5N08MC
Hersteller: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.92 EUR
Mindestbestellmenge: 2000
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NTBLS1D5N08MC ntbls1d5n08mc-d.pdf
NTBLS1D5N08MC
Hersteller: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
auf Bestellung 13400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.39 EUR
10+9.16 EUR
100+7.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL86062-F085 fdbl86062_f085-d.pdf
FDBL86062-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.84 EUR
Mindestbestellmenge: 2000
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FDBL86062-F085 fdbl86062_f085-d.pdf
FDBL86062-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 3796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.98 EUR
10+9.41 EUR
100+7.85 EUR
500+6.92 EUR
1000+6.23 EUR
Mindestbestellmenge: 2
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FDBL0200N100 fdbl0200n100-d.pdf
FDBL0200N100
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.85 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0200N100 fdbl0200n100-d.pdf
FDBL0200N100
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
auf Bestellung 4068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.31 EUR
10+7.97 EUR
100+7.16 EUR
Mindestbestellmenge: 2
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FDBL86063-F085 fdbl86063_f085-d.pdf
FDBL86063-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.53 EUR
Mindestbestellmenge: 2000
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FDBL86063-F085 fdbl86063_f085-d.pdf
FDBL86063-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
auf Bestellung 3965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.57 EUR
10+8.53 EUR
100+6.26 EUR
500+5.53 EUR
Mindestbestellmenge: 2
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NTBL095N65S3H ntbl095n65s3h-d.pdf
NTBL095N65S3H
Hersteller: onsemi
Description: SUPERFET3 FAST 95MOHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Produkt ist nicht verfügbar
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NCP4304AMNTWG ncp4304-d.pdf
NCP4304AMNTWG
Hersteller: onsemi
Description: IC SEC SIDE SYNC RECT DRV 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Applications: Secondary-Side Controller
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+2.35 EUR
25+2.22 EUR
100+1.89 EUR
250+1.77 EUR
500+1.55 EUR
Mindestbestellmenge: 7
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NCP2817BFCCT2G ncp2817-d.pdf
NCP2817BFCCT2G
Hersteller: onsemi
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
auf Bestellung 2924 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
15+1.23 EUR
25+1.16 EUR
100+0.94 EUR
250+0.88 EUR
500+0.75 EUR
1000+0.6 EUR
Mindestbestellmenge: 13
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MC10H175FN MC10H175-D.pdf
MC10H175FN
Hersteller: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
auf Bestellung 2530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
104+4.63 EUR
Mindestbestellmenge: 104
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MC10H130FNG MC10H130-D.pdf
MC10H130FNG
Hersteller: onsemi
Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3063 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+6.25 EUR
Mindestbestellmenge: 77
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MC10H130FNR2 MC10H130-D.pdf
MC10H130FNR2
Hersteller: onsemi
Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+6.25 EUR
Mindestbestellmenge: 77
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