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DMMT3904W_R1_00001 DMMT3904W_R1_00001 PanJit Semiconductor DMMT3904W Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.225W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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DMMT3906W-AU_R1_007A1 DMMT3906W-AU_R1_007A1 PanJit Semiconductor DMMT3906W-AU Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.2W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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DXK210_T0_00001 PanJit Semiconductor DXK210.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 75A; flat
Case: DXK
Max. off-state voltage: 1kV
Load current: 2A
Max. forward voltage: 1.05V
Max. forward impulse current: 75A
Kind of package: tube
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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DXK310_T0_00001 DXK310_T0_00001 PanJit Semiconductor DXK310.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat
Max. off-state voltage: 1kV
Load current: 3A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 90A
Case: DXK
Kind of package: tube
Max. forward voltage: 1.05V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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DZ23C4V7_R1_00501 DZ23C4V7_R1_00501 PanJit Semiconductor DZ23C2V4_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 4.7V; SMD; SOT23; double,common cathode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common cathode; double
Kind of package: reel; tape
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DZ23C5V6_R1_00501 DZ23C5V6_R1_00501 PanJit Semiconductor DZ23C2V4_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common cathode
Type of diode: Zener
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 5.6V
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DZ23C9V1_R1_00001 DZ23C9V1_R1_00001 PanJit Semiconductor DZ23C2V4_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 9.1V; SMD; SOT23; double,common cathode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common cathode; double
Kind of package: reel; tape
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ER1002F_T0_00001 ER1002F_T0_00001 PanJit Semiconductor ER1000F_SERIES.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 150A; ITO220AC; 35ns
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: ITO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Leakage current: 0.5mA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 200V
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ER3J_R1_00001 ER3J_R1_00001 PanJit Semiconductor ER3A_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 0.2mA
Kind of package: reel; tape
Max. forward impulse current: 100A
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ES1002FL_R1_00001 ES1002FL_R1_00001 PanJit Semiconductor ES1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 0.95V
Features of semiconductor devices: glass passivated; superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Leakage current: 10µA
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
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ES1006FL_R1_00001 ES1006FL_R1_00001 PanJit Semiconductor ES1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SOD123F; Ufmax: 1.7V; Ir: 10uA
Features of semiconductor devices: glass passivated; superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Leakage current: 10µA
Max. forward voltage: 1.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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FR3D_R2_00001 FR3D_R2_00001 PanJit Semiconductor Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 150ns; SMC; Ufmax: 1.3V; Ifsm: 100A
Mounting: SMD
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Case: SMC
Type of diode: rectifying
Reverse recovery time: 150ns
Max. forward impulse current: 100A
Max. forward voltage: 1.3V
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GBJ1010_T0_00601 PanJit Semiconductor GBJ1010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBJ1508HULV_T0_00601 PanJit Semiconductor GBJ1508HULV Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.72V
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GBJ3508HULV_T0_00601 PanJit Semiconductor GBJ3508HULV Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.72V
Leads: flat pin
Case: GBJ2
Kind of package: tube
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GBJ3508LL_T0_00601 PanJit Semiconductor GBJ3508LL Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 450A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.45kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.8V
Leads: flat pin
Case: GBJ2
Kind of package: tube
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GBJ5010_T0_00601 GBJ5010_T0_00601 PanJit Semiconductor GBJ5010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 50A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 50A
Max. forward impulse current: 0.5kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ2
Features of semiconductor devices: glass passivated
Kind of package: tube
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GBL610_T0_00601 PanJit Semiconductor GBL610.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 160A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 160A
Version: flat
Case: GBL2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
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GBU1006_T0_00601 PanJit Semiconductor Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBU1008LV_T0_00601 PanJit Semiconductor GBU1008LV.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.82V
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GBU2008LV_T0_00601 PanJit Semiconductor GBU2008LV.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.92V
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GBU3008_T0_00601 PanJit Semiconductor GBU3008.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 30A; Ifsm: 350A
Max. off-state voltage: 0.8kV
Load current: 30A
Features of semiconductor devices: glass passivated
Case: GBU2
Max. forward voltage: 1.05V
Max. forward impulse current: 350A
Kind of package: tube
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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GBU3508HULV_T0_00601 PanJit Semiconductor GBU3508HULV Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.92V
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GBU410_T0_00601 GBU410_T0_00601 PanJit Semiconductor GBU410.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 160A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 160A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBU610_T0_00601 PanJit Semiconductor GBU610.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GS1004FL_R1_00001 GS1004FL_R1_00001 PanJit Semiconductor GS1000FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
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GS1010FL-AU_R1_000A1 GS1010FL-AU_R1_000A1 PanJit Semiconductor GS1000FL-AU_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Application: automotive industry
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GS1010FL_R1_00001 GS1010FL_R1_00001 PanJit Semiconductor GS1000FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
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GS1010FL_R2_00001 GS1010FL_R2_00001 PanJit Semiconductor Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
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GS1G-AU_R1_000A1 GS1G-AU_R1_000A1 PanJit Semiconductor GS1A-AU_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
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GS1G-AU_R2_000A1 GS1G-AU_R2_000A1 PanJit Semiconductor Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
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GS1G_R1_00001 GS1G_R1_00001 PanJit Semiconductor GS1A_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
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GS1G_R2_00001 GS1G_R2_00001 PanJit Semiconductor Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
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IMZ1AS-AU_S1_000A1 PanJit Semiconductor IMZ1AS-AU.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
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IMZ1AS_S1_00001 PanJit Semiconductor IMZ1AS.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
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KBJ1010_T0_00601 KBJ1010_T0_00601 PanJit Semiconductor KBJ1010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 170A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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KBJ1510_T0_00601 PanJit Semiconductor KBJ1504_SERIES.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 180A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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KBJ2510_T0_00601 PanJit Semiconductor KBJ2510-Datasheet.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 240A
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
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KBJ410_T0_00601 PanJit Semiconductor KBJ410.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 135A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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MBR1020LL_R1_00001 MBR1020LL_R1_00001 PanJit Semiconductor MBR1020LL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.67V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 25mA
Case: SOD123F
Type of diode: Schottky rectifying
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MBR1020VL-AU_R1_000A1 MBR1020VL-AU_R1_000A1 PanJit Semiconductor MBR1020VL-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 0.34V
Application: automotive industry
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 15mA
Case: SOD123F
Type of diode: Schottky rectifying
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MBR1020VL_R1_00001 MBR1020VL_R1_00001 PanJit Semiconductor MBR1020VL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 0.34V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 60mA
Case: SOD123F
Type of diode: Schottky rectifying
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MBR1040VL_R1_00001 MBR1040VL_R1_00001 PanJit Semiconductor MBR1040VL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.36V
Max. forward impulse current: 40A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.45mA
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MBR310AFC-AU_R1_000A1 MBR310AFC-AU_R1_000A1 PanJit Semiconductor MBR310AFC-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 0.3mA
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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MBR315AFC_R1_00001 MBR315AFC_R1_00001 PanJit Semiconductor MBR38AFC_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Leakage current: 50µA
Max. forward impulse current: 80A
Kind of package: reel; tape
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MBR5H150SS_AY_00001 MBR5H150SS_AY_00001 PanJit Semiconductor MBR5H150SS_SR5H15.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Leakage current: 1mA
Kind of package: Ammo Pack
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MER1002CT_T0_00601 MER1002CT_T0_00601 PanJit Semiconductor MER1002CT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 100A; ITO220AB; 37ns
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
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MER1002FT_T0_00601 MER1002FT_T0_00601 PanJit Semiconductor MER1002FT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; ITO220AC; 47ns
Mounting: THT
Semiconductor structure: single diode
Case: ITO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 47ns
Leakage current: 90µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 170A
Max. off-state voltage: 200V
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MER1002T_T0_00601 MER1002T_T0_00601 PanJit Semiconductor MER1002T.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; TO220AC; Ir: 90uA
Mounting: THT
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 47ns
Leakage current: 90µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 170A
Max. off-state voltage: 200V
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MER1602CT_T0_00601 MER1602CT_T0_00601 PanJit Semiconductor MER1602CT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; Ifsm: 120A; ITO220AB; tube; 43ns
Case: ITO220AB
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Leakage current: 75µA
Type of diode: rectifying
Reverse recovery time: 43ns
Max. forward impulse current: 120A
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MER502FT_T0_00601 MER502FT_T0_00601 PanJit Semiconductor MER502FT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 100A; ITO220AC; tube; Ir: 60uA
Mounting: THT
Max. forward impulse current: 100A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 5A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 60µA
Case: ITO220AC
Type of diode: rectifying
Reverse recovery time: 37ns
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MER502T_T0_00601 MER502T_T0_00601 PanJit Semiconductor MER502T.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; tube; Ifsm: 100A; TO220AC; Ir: 60uA
Mounting: THT
Kind of package: tube
Max. off-state voltage: 200V
Case: TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 5A
Max. forward impulse current: 100A
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MER802FT_T0_00601 MER802FT_T0_00601 PanJit Semiconductor MER802FT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; ITO220AC; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: ITO220AC
Max. forward voltage: 0.95V
Leakage current: 75µA
Reverse recovery time: 43ns
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MER802T_T0_00601 MER802T_T0_00601 PanJit Semiconductor MER802T.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.95V
Leakage current: 75µA
Reverse recovery time: 43ns
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MMBD3004BRM_R1_00001 MMBD3004BRM_R1_00001 PanJit Semiconductor MMBD3004BRM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 350V; 0.225A; 50ns; SOT23-6; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Max. off-state voltage: 350V
Load current: 0.225A
Max. load current: 0.625A
Kind of package: reel; tape
Semiconductor structure: double series x2
Leakage current: 0.1mA
Case: SOT23-6
Type of diode: switching
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MMBT918_R1_00001 MMBT918_R1_00001 PanJit Semiconductor MMBT918.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
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MMBTA05-AU_R1_000A1 MMBTA05-AU_R1_000A1 PanJit Semiconductor MMBTA05-AU_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MMBTA05_R1_00001 MMBTA05_R1_00001 PanJit Semiconductor MMBTA05_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MMBZ5231A_R1_00501 MMBZ5231A_R1_00501 PanJit Semiconductor MMBZ5229A_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Tolerance: ±2%
Power dissipation: 0.41W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 5.1V
Type of diode: Zener
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MMBZ5236B_R1_00501 MMBZ5236B_R1_00501 PanJit Semiconductor MMBZ5221B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 7.5V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.41W
Zener voltage: 7.5V
Produkt ist nicht verfügbar
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DMMT3904W_R1_00001 DMMT3904W
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.225W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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DMMT3906W-AU_R1_007A1 DMMT3906W-AU
Hersteller: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.2W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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DXK210_T0_00001 DXK210.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 75A; flat
Case: DXK
Max. off-state voltage: 1kV
Load current: 2A
Max. forward voltage: 1.05V
Max. forward impulse current: 75A
Kind of package: tube
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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DXK310_T0_00001 DXK310.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat
Max. off-state voltage: 1kV
Load current: 3A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 90A
Case: DXK
Kind of package: tube
Max. forward voltage: 1.05V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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DZ23C4V7_R1_00501 DZ23C2V4_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 4.7V; SMD; SOT23; double,common cathode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common cathode; double
Kind of package: reel; tape
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DZ23C5V6_R1_00501 DZ23C2V4_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common cathode
Type of diode: Zener
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 5.6V
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DZ23C9V1_R1_00001 DZ23C2V4_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 9.1V; SMD; SOT23; double,common cathode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common cathode; double
Kind of package: reel; tape
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ER1002F_T0_00001 ER1000F_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 150A; ITO220AC; 35ns
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: ITO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Leakage current: 0.5mA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 200V
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ER3J_R1_00001 ER3A_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 0.2mA
Kind of package: reel; tape
Max. forward impulse current: 100A
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ES1002FL_R1_00001 ES1001FL_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 0.95V
Features of semiconductor devices: glass passivated; superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Leakage current: 10µA
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
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ES1006FL_R1_00001 ES1001FL_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SOD123F; Ufmax: 1.7V; Ir: 10uA
Features of semiconductor devices: glass passivated; superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Leakage current: 10µA
Max. forward voltage: 1.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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FR3D_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 150ns; SMC; Ufmax: 1.3V; Ifsm: 100A
Mounting: SMD
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Case: SMC
Type of diode: rectifying
Reverse recovery time: 150ns
Max. forward impulse current: 100A
Max. forward voltage: 1.3V
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GBJ1010_T0_00601 GBJ1010.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBJ1508HULV_T0_00601 GBJ1508HULV
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.72V
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GBJ3508HULV_T0_00601 GBJ3508HULV
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.72V
Leads: flat pin
Case: GBJ2
Kind of package: tube
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GBJ3508LL_T0_00601 GBJ3508LL
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 450A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.45kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.8V
Leads: flat pin
Case: GBJ2
Kind of package: tube
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GBJ5010_T0_00601 GBJ5010.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 50A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 50A
Max. forward impulse current: 0.5kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ2
Features of semiconductor devices: glass passivated
Kind of package: tube
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GBL610_T0_00601 GBL610.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 160A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 160A
Version: flat
Case: GBL2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
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GBU1006_T0_00601
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBU1008LV_T0_00601 GBU1008LV.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.82V
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GBU2008LV_T0_00601 GBU2008LV.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.92V
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GBU3008_T0_00601 GBU3008.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 30A; Ifsm: 350A
Max. off-state voltage: 0.8kV
Load current: 30A
Features of semiconductor devices: glass passivated
Case: GBU2
Max. forward voltage: 1.05V
Max. forward impulse current: 350A
Kind of package: tube
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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GBU3508HULV_T0_00601 GBU3508HULV
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.92V
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GBU410_T0_00601 GBU410.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 160A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 160A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBU610_T0_00601 GBU610.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GS1004FL_R1_00001 GS1000FL_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
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GS1010FL-AU_R1_000A1 GS1000FL-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Application: automotive industry
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GS1010FL_R1_00001 GS1000FL_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
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GS1010FL_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
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GS1G-AU_R1_000A1 GS1A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
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GS1G-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Produkt ist nicht verfügbar
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GS1G_R1_00001 GS1A_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
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GS1G_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Produkt ist nicht verfügbar
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IMZ1AS-AU_S1_000A1 IMZ1AS-AU.pdf
Hersteller: PanJit Semiconductor
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
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IMZ1AS_S1_00001 IMZ1AS.pdf
Hersteller: PanJit Semiconductor
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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KBJ1010_T0_00601 KBJ1010.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 170A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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KBJ1510_T0_00601 KBJ1504_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 180A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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KBJ2510_T0_00601 KBJ2510-Datasheet.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 240A
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
auf Bestellung 193 Stücke:
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KBJ410_T0_00601 KBJ410.pdf
Hersteller: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 135A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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MBR1020LL_R1_00001 MBR1020LL.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.67V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 25mA
Case: SOD123F
Type of diode: Schottky rectifying
auf Bestellung 2560 Stücke:
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MBR1020VL-AU_R1_000A1 MBR1020VL-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 0.34V
Application: automotive industry
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 15mA
Case: SOD123F
Type of diode: Schottky rectifying
auf Bestellung 2339 Stücke:
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MBR1020VL_R1_00001 MBR1020VL.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 0.34V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 60mA
Case: SOD123F
Type of diode: Schottky rectifying
auf Bestellung 1357 Stücke:
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MBR1040VL_R1_00001 MBR1040VL.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.36V
Max. forward impulse current: 40A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.45mA
auf Bestellung 1547 Stücke:
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MBR310AFC-AU_R1_000A1 MBR310AFC-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 0.3mA
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR315AFC_R1_00001 MBR38AFC_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Leakage current: 50µA
Max. forward impulse current: 80A
Kind of package: reel; tape
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MBR5H150SS_AY_00001 MBR5H150SS_SR5H15.pdf
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Leakage current: 1mA
Kind of package: Ammo Pack
auf Bestellung 267 Stücke:
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MER1002CT_T0_00601 MER1002CT.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 100A; ITO220AB; 37ns
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
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MER1002FT_T0_00601 MER1002FT.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; ITO220AC; 47ns
Mounting: THT
Semiconductor structure: single diode
Case: ITO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 47ns
Leakage current: 90µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 170A
Max. off-state voltage: 200V
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MER1002T_T0_00601 MER1002T.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; TO220AC; Ir: 90uA
Mounting: THT
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 47ns
Leakage current: 90µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 170A
Max. off-state voltage: 200V
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MER1602CT_T0_00601 MER1602CT.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; Ifsm: 120A; ITO220AB; tube; 43ns
Case: ITO220AB
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Leakage current: 75µA
Type of diode: rectifying
Reverse recovery time: 43ns
Max. forward impulse current: 120A
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MER502FT_T0_00601 MER502FT.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 100A; ITO220AC; tube; Ir: 60uA
Mounting: THT
Max. forward impulse current: 100A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 5A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 60µA
Case: ITO220AC
Type of diode: rectifying
Reverse recovery time: 37ns
auf Bestellung 150 Stücke:
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MER502T_T0_00601 MER502T.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; tube; Ifsm: 100A; TO220AC; Ir: 60uA
Mounting: THT
Kind of package: tube
Max. off-state voltage: 200V
Case: TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 5A
Max. forward impulse current: 100A
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MER802FT_T0_00601 MER802FT.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; ITO220AC; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: ITO220AC
Max. forward voltage: 0.95V
Leakage current: 75µA
Reverse recovery time: 43ns
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MER802T_T0_00601 MER802T.pdf
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.95V
Leakage current: 75µA
Reverse recovery time: 43ns
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MMBD3004BRM_R1_00001 MMBD3004BRM.pdf
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 350V; 0.225A; 50ns; SOT23-6; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Max. off-state voltage: 350V
Load current: 0.225A
Max. load current: 0.625A
Kind of package: reel; tape
Semiconductor structure: double series x2
Leakage current: 0.1mA
Case: SOT23-6
Type of diode: switching
auf Bestellung 2000 Stücke:
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MMBT918_R1_00001 MMBT918.pdf
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
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MMBTA05-AU_R1_000A1 MMBTA05-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MMBTA05_R1_00001 MMBTA05_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MMBZ5231A_R1_00501 MMBZ5229A_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Tolerance: ±2%
Power dissipation: 0.41W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 5.1V
Type of diode: Zener
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MMBZ5236B_R1_00501 MMBZ5221B_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 7.5V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.41W
Zener voltage: 7.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH