Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1009) > Seite 15 nach 17
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PJSD07TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 7V Semiconductor structure: unidirectional Leakage current: 0.15µA Case: SOD523 Capacitance: 85pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 7.5V Max. forward impulse current: 8.8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD07TS_R1_00001 | PanJit Semiconductor |
 Category: Protection diodes - arraysDescription: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1 Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: unidirectional Capacitance: 85pF Leakage current: 0.15µA Max. forward impulse current: 8.8A Breakdown voltage: 7.5V Peak pulse power dissipation: 0.12kW Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD08TS-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1 Mounting: SMD Application: automotive industry Max. off-state voltage: 8V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 70pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 8.5V Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD08W_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1 Case: SOD323 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.15nF Leakage current: 10µA Number of channels: 1 Max. forward impulse current: 1A Max. off-state voltage: 8V Breakdown voltage: 10V Peak pulse power dissipation: 0.35kW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD12_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.3V; 17A; 0.4kW; unidirectional; SOD123; Ch: 1 Case: SOD123 Mounting: SMD Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 0.18nF Type of diode: TVS Number of channels: 1 Breakdown voltage: 13.3V Max. forward impulse current: 17A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD12TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 12V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 60pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 13.3V Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD15CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 18.48V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15V Leakage current: 1µA Capacitance: 75pF Max. forward impulse current: 10A Application: automotive industry Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD15CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 18.48V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15V Leakage current: 1µA Capacitance: 75pF Max. forward impulse current: 10A Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD15TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 15V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 50pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 16.6V Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD24TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 24V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 25pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 26.7V Max. forward impulse current: 3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD24TS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 5µA Kind of package: reel; tape Breakdown voltage: 26.7V Peak pulse power dissipation: 0.12kW Version: ESD |
Produkt ist nicht verfügbar |
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PJT7002H_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N/P-MOSFET Gate-source voltage: 10V |
Produkt ist nicht verfügbar |
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PJT7002KDW_R1_00501 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N/P-MOSFET Gate-source voltage: 10V |
Produkt ist nicht verfügbar |
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| PJT7812_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Case: SOT363 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJUSB05-4_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5 Case: SOT23-6L Mounting: SMD Type of diode: TVS Number of channels: 5 Breakdown voltage: 6.37V Peak pulse power dissipation: 0.15kW Max. off-state voltage: 5V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 8.5pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJUSB208_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Case: SOT23-6L Mounting: SMD Type of diode: TVS Number of channels: 4 Breakdown voltage: 85V Max. off-state voltage: 70V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 1pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJUSB208_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Case: SOT23-6L Mounting: SMD Type of diode: TVS Number of channels: 4 Breakdown voltage: 85V Max. off-state voltage: 70V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 1pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJW3P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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| PJW3P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJW5P06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Application: automotive industry Gate charge: 17nC On-state resistance: 85mΩ Power dissipation: 1W |
Produkt ist nicht verfügbar |
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| PJW5P06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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PJW7N06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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PJW7N06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| PM1008LL_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8 Max. forward impulse current: 190A Max. forward voltage: 0.95V Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 10A Case: M8 Type of bridge rectifier: single-phase |
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| PM1010_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8 Max. forward impulse current: 190A Max. forward voltage: 0.95V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 10A Case: M8 Type of bridge rectifier: single-phase |
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| PM810_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8 Case: M8 Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 8A Max. forward impulse current: 170A Max. off-state voltage: 1kV Electrical mounting: SMT |
Produkt ist nicht verfügbar |
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| PMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4 Case: M4 Max. forward voltage: 1.05V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 2A Type of bridge rectifier: single-phase Max. forward impulse current: 70A |
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| PMS310_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 3A Max. forward impulse current: 110A Max. off-state voltage: 1kV |
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PMS410_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4 Kind of package: reel; tape Features of semiconductor devices: glass passivated Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 4A Max. forward impulse current: 120A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
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| PS1405-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1 Mounting: SMD Breakdown voltage: 6V Max. forward impulse current: 5A Max. off-state voltage: 5V Semiconductor structure: bidirectional Leakage current: 0.5µA Case: DFN2 Capacitance: 0.42pF Type of diode: TVS Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PS140M-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1 Mounting: SMD Breakdown voltage: 25.5V Max. forward impulse current: 10A Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 0.5µA Case: DFN2 Capacitance: 0.5pF Type of diode: TVS Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PS161M-D62_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Case: DFN1006-2 Mounting: SMD Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PS2705-D63_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 5A Semiconductor structure: bidirectional Mounting: SMD Max. off-state voltage: 5V Leakage current: 0.5µA Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PS5915-S26_S1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5 Case: SOT23-6L Mounting: SMD Type of diode: TVS Number of channels: 5 Breakdown voltage: 5.5V Max. forward impulse current: 5A Max. off-state voltage: 5V Semiconductor structure: unidirectional Leakage current: 1µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PSMB033N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 219A; 333W; DFN5060-8 Pulsed drain current: 219A Power dissipation: 333W Gate charge: 85nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 On-state resistance: 3.4mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PSMB055N08NS1_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
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PSMB055N08NS1_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO247AD-3; TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
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| PSMP033N10NS2_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement |
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| PSMQC039N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 89A; 125W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 89A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: 20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 488A Gate charge: 53nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PSMQC078N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 66A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| PSMQC098N10LS2-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.8A Case: DFN5060-8 Gate-source voltage: 60V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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| PSMQC098N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| PSMQC120N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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| PSMQC120N06LS1_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PSMQC280N10LS2-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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| PTGH7565S1_T0_00201 | PanJit Semiconductor |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 183W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 108nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Trench FS IGBT |
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| PZ1AH12B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode Semiconductor structure: single diode Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Type of diode: Zener Tolerance: ±5% Zener voltage: 12V Application: automotive industry Case: SOD123HE |
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| PZ1AH12B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode Semiconductor structure: single diode Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Type of diode: Zener Tolerance: ±5% Zener voltage: 12V Case: SOD123HE |
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| PZ1AH16B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD123HE Type of diode: Zener Power dissipation: 1W Tolerance: ±5% Zener voltage: 16V Application: automotive industry Kind of package: reel; tape |
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| PZ1AH16B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD123HE Type of diode: Zener Power dissipation: 1W Tolerance: ±5% Zener voltage: 16V Kind of package: reel; tape |
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| PZ1AH18B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 1W Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Zener voltage: 18V Type of diode: Zener |
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Im Einkaufswagen Stück im Wert von UAH | |
| PZ1AH18B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Zener voltage: 18V Type of diode: Zener |
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| PZ1AH25B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 25V; SMD; SOD123HE; reel,tape; single diode Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Zener voltage: 25V Type of diode: Zener Power dissipation: 1W Application: automotive industry |
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Im Einkaufswagen Stück im Wert von UAH | |
| PZ1AH25B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 25V; SMD; SOD123HE; reel,tape; single diode Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Zener voltage: 25V Type of diode: Zener Power dissipation: 1W |
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Im Einkaufswagen Stück im Wert von UAH | |
| PZ1AH33B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 33V; SMD; SOD123HE; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOD123HE Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
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Im Einkaufswagen Stück im Wert von UAH | |
| PZ1AH33B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 33V; SMD; SOD123HE; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOD123HE Semiconductor structure: single diode Kind of package: reel; tape |
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Im Einkaufswagen Stück im Wert von UAH |
| PJSD07TS-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Leakage current: 0.15µA
Case: SOD523
Capacitance: 85pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Leakage current: 0.15µA
Case: SOD523
Capacitance: 85pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Produkt ist nicht verfügbar
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| PJSD07TS_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Capacitance: 85pF
Leakage current: 0.15µA
Max. forward impulse current: 8.8A
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.12kW
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Capacitance: 85pF
Leakage current: 0.15µA
Max. forward impulse current: 8.8A
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.12kW
Number of channels: 1
Produkt ist nicht verfügbar
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| PJSD08TS-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 8V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 70pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 8.5V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 8V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 70pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 8.5V
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD08W_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.15nF
Leakage current: 10µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 8V
Breakdown voltage: 10V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.15nF
Leakage current: 10µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 8V
Breakdown voltage: 10V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD12_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 17A; 0.4kW; unidirectional; SOD123; Ch: 1
Case: SOD123
Mounting: SMD
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 0.18nF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 13.3V
Max. forward impulse current: 17A
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 17A; 0.4kW; unidirectional; SOD123; Ch: 1
Case: SOD123
Mounting: SMD
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 0.18nF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 13.3V
Max. forward impulse current: 17A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJSD12TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 60pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 13.3V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 60pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 13.3V
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD15CW-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Max. forward impulse current: 10A
Application: automotive industry
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Max. forward impulse current: 10A
Application: automotive industry
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD15CW_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Max. forward impulse current: 10A
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Max. forward impulse current: 10A
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD15TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 50pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 16.6V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 50pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 16.6V
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD24TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 25pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 26.7V
Max. forward impulse current: 3A
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 25pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 26.7V
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD24TS_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Produkt ist nicht verfügbar
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| PJT7002H_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
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| PJT7002KDW_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
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| PJT7812_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJUSB05-4_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 5
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 8.5pF
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 5
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 8.5pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJUSB208_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 4
Breakdown voltage: 85V
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1pF
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 4
Breakdown voltage: 85V
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1pF
Produkt ist nicht verfügbar
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| PJUSB208_S1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 4
Breakdown voltage: 85V
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1pF
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 4
Breakdown voltage: 85V
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJW3P06A-AU_R2_007A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJW3P06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJW4N06A-AU_R2_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJW4N06A_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJW5P06A-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
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| PJW5P06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJW7N06A-AU_R2_007A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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| PJW7N06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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| PM1008LL_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
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| PM1010_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
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| PM810_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Produkt ist nicht verfügbar
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| PMS210_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Produkt ist nicht verfügbar
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| PMS310_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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| PMS410_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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| PS1405-D32_R1_00301 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.42pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.42pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
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| PS140M-D32_R1_00301 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
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| PS161M-D62_R1_00301 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
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| PS2705-D63_R1_00301 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 2
Produkt ist nicht verfügbar
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| PS5915-S26_S1_00301 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 5
Breakdown voltage: 5.5V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 5
Breakdown voltage: 5.5V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Produkt ist nicht verfügbar
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| PSMB033N10NS2_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 219A; 333W; DFN5060-8
Pulsed drain current: 219A
Power dissipation: 333W
Gate charge: 85nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
On-state resistance: 3.4mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 219A; 333W; DFN5060-8
Pulsed drain current: 219A
Power dissipation: 333W
Gate charge: 85nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
On-state resistance: 3.4mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| PSMB055N08NS1_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMB055N08NS1_T0_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PSMP033N10NS2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMP055N08NS1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| PSMQC039N10NS2_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 89A; 125W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 89A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 89A; 125W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 89A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PSMQC040N10NS2_R2_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 488A
Gate charge: 53nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 488A
Gate charge: 53nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PSMQC078N10LS2_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMQC098N10LS2-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.8A
Case: DFN5060-8
Gate-source voltage: 60V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.8A
Case: DFN5060-8
Gate-source voltage: 60V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PSMQC098N10LS2_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMQC120N06LS1-AU_R2_006A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PSMQC120N06LS1_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMQC280N10LS2-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PTGH7565S1_T0_00201 |
Hersteller: PanJit Semiconductor
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Trench FS IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Trench FS IGBT
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| PZ1AH12B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Application: automotive industry
Case: SOD123HE
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Application: automotive industry
Case: SOD123HE
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PZ1AH12B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123HE
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123HE
Produkt ist nicht verfügbar
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| PZ1AH16B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Application: automotive industry
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PZ1AH16B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PZ1AH18B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 18V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 18V
Type of diode: Zener
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PZ1AH18B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 18V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 18V
Type of diode: Zener
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PZ1AH25B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 25V; SMD; SOD123HE; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 25V
Type of diode: Zener
Power dissipation: 1W
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 25V; SMD; SOD123HE; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 25V
Type of diode: Zener
Power dissipation: 1W
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PZ1AH25B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 25V; SMD; SOD123HE; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 25V
Type of diode: Zener
Power dissipation: 1W
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 25V; SMD; SOD123HE; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 25V
Type of diode: Zener
Power dissipation: 1W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PZ1AH33B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 33V; SMD; SOD123HE; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123HE
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 33V; SMD; SOD123HE; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123HE
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PZ1AH33B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 33V; SMD; SOD123HE; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123HE
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 33V; SMD; SOD123HE; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123HE
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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