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PJMB210N65EC_R2_00601 PanJit Semiconductor PJMB210N65EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Anzahl je Verpackung: 1 Stücke
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PJMB210N65EC_R2_00601 PanJit Semiconductor PJMB210N65EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
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PJMB390N65EC_R2_00601 PanJit Semiconductor PJMB390N65EC.pdf PJMB390N65EC-R2 SMD N channel transistors
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PJMB390N65EC_T0_00601 PanJit Semiconductor PJMB390N65EC-T0 SMD N channel transistors
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PJMBZ12A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
Max. off-state voltage: 8.5V
Breakdown voltage: 11.4...12.6V
Leakage current: 0.2µA
Version: ESD
Peak pulse power dissipation: 40W
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PJMBZ12A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
Max. off-state voltage: 8.5V
Breakdown voltage: 11.4...12.6V
Leakage current: 0.2µA
Version: ESD
Peak pulse power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
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PJMBZ15A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU_SERIES.pdf PJMBZ15A-AU-R1 Protection diodes - arrays
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PJMBZ18A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU_SERIES.pdf PJMBZ18A-AU-R1 Protection diodes - arrays
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PJMBZ27A-AU_R1_007A1 PanJit Semiconductor PJMBZ27A-AU-R1 Protection diodes - arrays
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PJMBZ27V-AU_R1_000A1 PanJit Semiconductor PJMBZ15V-AU_SERIES.pdf PJMBZ27V-AU-R1 Protection diodes - arrays
auf Bestellung 2950 Stücke:
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524+0.14 EUR
1000+0.072 EUR
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PJMBZ27V-AU_R2_000A1 PanJit Semiconductor PJMBZ27V-AU-R2 Protection diodes - arrays
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PJMBZ33A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
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PJMBZ33A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
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PJMBZ5V6A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU-R1 Protection diodes - arrays
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PJMBZ6V2A-AU_R1_007A1 PanJit Semiconductor PJMBZ6V2A-AU-R1 Protection diodes - arrays
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PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 24W
Leakage current: 0.5µA
Version: ESD
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PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 24W
Leakage current: 0.5µA
Version: ESD
Anzahl je Verpackung: 1 Stücke
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PJMBZ9V1A-AU_R1_007A1 PanJit Semiconductor PJMBZ9V1A-AU-R1 Protection diodes - arrays
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PJMD280N60E1_L2_00601 PanJit Semiconductor PJMD280N60E1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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PJMD280N60E1_L2_00601 PanJit Semiconductor PJMD280N60E1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD360N60EC_L2_00001 PJMD360N60EC_L2_00001 PanJit Semiconductor PJMD360N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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PJMD360N60EC_L2_00001 PJMD360N60EC_L2_00001 PanJit Semiconductor PJMD360N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD390N65EC_L2_00001 PanJit Semiconductor PJMD390N65EC.pdf PJMD390N65EC-L2 SMD N channel transistors
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PJMD580N60E1_L2_00001 PJMD580N60E1_L2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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PJMD580N60E1_L2_00001 PJMD580N60E1_L2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD600N65E1_L2_00001 PanJit Semiconductor PJMD600N65E1-L2 SMD N channel transistors
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PJMD900N60EC_L2_00001 PJMD900N60EC_L2_00001 PanJit Semiconductor PJMD900N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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PJMD900N60EC_L2_00001 PJMD900N60EC_L2_00001 PanJit Semiconductor PJMD900N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD990N65EC_L2_00001 PanJit Semiconductor PJMD990N65EC.pdf PJMD990N65EC-L2 SMD N channel transistors
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PJMF099N60EC_T0_00601 PanJit Semiconductor PJMF099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Anzahl je Verpackung: 1 Stücke
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PJMF099N60EC_T0_00601 PanJit Semiconductor PJMF099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
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PJMF120N60EC_T0_00001 PJMF120N60EC_T0_00001 PanJit Semiconductor PJMF120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
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PJMF120N60EC_T0_00001 PJMF120N60EC_T0_00001 PanJit Semiconductor PJMF120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
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PJMF130N65EC_T0_006A1 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 63A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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PJMF130N65EC_T0_006A1 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 63A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
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PJMF190N60E1_T0_00001 PJMF190N60E1_T0_00001 PanJit Semiconductor PJMF190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Mounting: THT
Case: ITO220AB
Anzahl je Verpackung: 1 Stücke
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PJMF190N60E1_T0_00001 PJMF190N60E1_T0_00001 PanJit Semiconductor PJMF190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Mounting: THT
Case: ITO220AB
auf Bestellung 28 Stücke:
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21+3.53 EUR
28+2.56 EUR
Mindestbestellmenge: 21
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PJMF210N65EC_T0_00601 PJMF210N65EC_T0_00601 PanJit Semiconductor PJMF210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Anzahl je Verpackung: 1 Stücke
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PJMF210N65EC_T0_00601 PJMF210N65EC_T0_00601 PanJit Semiconductor PJMF210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
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PJMF280N60E1_T0_00001 PJMF280N60E1_T0_00001 PanJit Semiconductor PJMF280N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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PJMF280N60E1_T0_00001 PJMF280N60E1_T0_00001 PanJit Semiconductor PJMF280N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF280N65E1_T0_00001 PanJit Semiconductor PJMF280N65E1.pdf PJMF280N65E1-T0 THT N channel transistors
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PJMF360N60EC_T0_00001 PJMF360N60EC_T0_00001 PanJit Semiconductor PJMF360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMF360N60EC_T0_00001 PJMF360N60EC_T0_00001 PanJit Semiconductor PJMF360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF390N65EC_T0_00001 PanJit Semiconductor PJMF390N65EC.pdf PJMF390N65EC-T0 THT N channel transistors
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PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 PanJit Semiconductor PJMF580N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 PanJit Semiconductor PJMF580N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF600N65E1_T0_00001 PanJit Semiconductor PJMF600N65E1.pdf PJMF600N65E1-T0 THT N channel transistors
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PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 PanJit Semiconductor PJMF990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 PanJit Semiconductor PJMF990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH040N60EC_T0_00201 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMH040N60EC_T0_00201 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH074N60FRC_T0_00601 PJMH074N60FRC_T0_00601 PanJit Semiconductor PJMH074N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMH074N60FRC_T0_00601 PJMH074N60FRC_T0_00601 PanJit Semiconductor PJMH074N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH190N60E1_T0_00601 PanJit Semiconductor PJMH190N60E1.pdf PJMH190N60E1-T0 THT N channel transistors
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.95 EUR
30+2.39 EUR
32+2.26 EUR
1000+2.17 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.95 EUR
30+2.39 EUR
32+2.26 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Anzahl je Verpackung: 1 Stücke
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PJMB210N65EC_R2_00601 PJMB210N65EC.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMB210N65EC_R2_00601 PJMB210N65EC.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Produkt ist nicht verfügbar
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PJMB390N65EC_R2_00601 PJMB390N65EC.pdf
Hersteller: PanJit Semiconductor
PJMB390N65EC-R2 SMD N channel transistors
Produkt ist nicht verfügbar
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PJMB390N65EC_T0_00601
Hersteller: PanJit Semiconductor
PJMB390N65EC-T0 SMD N channel transistors
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PJMBZ12A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
Max. off-state voltage: 8.5V
Breakdown voltage: 11.4...12.6V
Leakage current: 0.2µA
Version: ESD
Peak pulse power dissipation: 40W
Produkt ist nicht verfügbar
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PJMBZ12A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
Max. off-state voltage: 8.5V
Breakdown voltage: 11.4...12.6V
Leakage current: 0.2µA
Version: ESD
Peak pulse power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMBZ15A-AU_R1_007A1 PJMBZ5V6A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
PJMBZ15A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
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PJMBZ18A-AU_R1_007A1 PJMBZ5V6A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
PJMBZ18A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
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PJMBZ27A-AU_R1_007A1
Hersteller: PanJit Semiconductor
PJMBZ27A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
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PJMBZ27V-AU_R1_000A1 PJMBZ15V-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
PJMBZ27V-AU-R1 Protection diodes - arrays
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
524+0.14 EUR
1000+0.072 EUR
1058+0.068 EUR
Mindestbestellmenge: 524
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PJMBZ27V-AU_R2_000A1
Hersteller: PanJit Semiconductor
PJMBZ27V-AU-R2 Protection diodes - arrays
Produkt ist nicht verfügbar
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PJMBZ33A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
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PJMBZ33A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMBZ5V6A-AU_R1_007A1
Hersteller: PanJit Semiconductor
PJMBZ5V6A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
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PJMBZ6V2A-AU_R1_007A1
Hersteller: PanJit Semiconductor
PJMBZ6V2A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
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PJMBZ6V8A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 24W
Leakage current: 0.5µA
Version: ESD
Produkt ist nicht verfügbar
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PJMBZ6V8A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 24W
Leakage current: 0.5µA
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMBZ9V1A-AU_R1_007A1
Hersteller: PanJit Semiconductor
PJMBZ9V1A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
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PJMD280N60E1_L2_00601 PJMD280N60E1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMD280N60E1_L2_00601 PJMD280N60E1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD360N60EC_L2_00001 PJMD360N60EC.pdf
PJMD360N60EC_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PJMD360N60EC_L2_00001 PJMD360N60EC.pdf
PJMD360N60EC_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD390N65EC_L2_00001 PJMD390N65EC.pdf
Hersteller: PanJit Semiconductor
PJMD390N65EC-L2 SMD N channel transistors
Produkt ist nicht verfügbar
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PJMD580N60E1_L2_00001
PJMD580N60E1_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD580N60E1_L2_00001
PJMD580N60E1_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD600N65E1_L2_00001
Hersteller: PanJit Semiconductor
PJMD600N65E1-L2 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD900N60EC_L2_00001 PJMD900N60EC.pdf
PJMD900N60EC_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD900N60EC_L2_00001 PJMD900N60EC.pdf
PJMD900N60EC_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD990N65EC_L2_00001 PJMD990N65EC.pdf
Hersteller: PanJit Semiconductor
PJMD990N65EC-L2 SMD N channel transistors
Produkt ist nicht verfügbar
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PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF120N60EC_T0_00001 PJMF120N60EC.pdf
PJMF120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF120N60EC_T0_00001 PJMF120N60EC.pdf
PJMF120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF130N65EC_T0_006A1
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 63A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF130N65EC_T0_006A1
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 63A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF190N60E1_T0_00001 PJMF190N60E1.pdf
PJMF190N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Mounting: THT
Case: ITO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.53 EUR
28+2.56 EUR
2000+1.8 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
PJMF190N60E1_T0_00001 PJMF190N60E1.pdf
PJMF190N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Mounting: THT
Case: ITO220AB
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
28+2.56 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
PJMF210N65EC_T0_00601 PJMF210N65EC.pdf
PJMF210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF210N65EC_T0_00601 PJMF210N65EC.pdf
PJMF210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF280N60E1_T0_00001 PJMF280N60E1.pdf
PJMF280N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF280N60E1_T0_00001 PJMF280N60E1.pdf
PJMF280N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF280N65E1_T0_00001 PJMF280N65E1.pdf
Hersteller: PanJit Semiconductor
PJMF280N65E1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF360N60EC_T0_00001 PJMF360N60EC.pdf
PJMF360N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF360N60EC_T0_00001 PJMF360N60EC.pdf
PJMF360N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF390N65EC_T0_00001 PJMF390N65EC.pdf
Hersteller: PanJit Semiconductor
PJMF390N65EC-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF600N65E1_T0_00001 PJMF600N65E1.pdf
Hersteller: PanJit Semiconductor
PJMF600N65E1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
PJMF990N65EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
PJMF990N65EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH040N60EC_T0_00201
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH040N60EC_T0_00201
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH074N60FRC_T0_00601 PJMH074N60FRC.pdf
PJMH074N60FRC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH074N60FRC_T0_00601 PJMH074N60FRC.pdf
PJMH074N60FRC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH120N60EC_T0_00601 PJMH120N60EC.pdf
PJMH120N60EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH120N60EC_T0_00601 PJMH120N60EC.pdf
PJMH120N60EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH190N60E1_T0_00601 PJMH190N60E1.pdf
Hersteller: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.95 EUR
30+2.39 EUR
32+2.26 EUR
1000+2.17 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
30+2.39 EUR
32+2.26 EUR
Mindestbestellmenge: 19
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PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Anzahl je Verpackung: 1 Stücke
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