Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1207) > Seite 15 nach 21
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PJMBZ27A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ27A-AU-R1 Protection diodes - arrays |
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PJMBZ27V-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23 Type of diode: TVS array Case: SOT23 Mounting: SMD Max. off-state voltage: 22V Semiconductor structure: common cathode; double Capacitance: 50pF Kind of package: reel; tape Application: automotive industry Version: ESD Peak pulse power dissipation: 40W Breakdown voltage: 25.65...28.35V Leakage current: 50nA |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMBZ27V-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23 Type of diode: TVS array Case: SOT23 Mounting: SMD Max. off-state voltage: 22V Semiconductor structure: common cathode; double Capacitance: 50pF Kind of package: reel; tape Application: automotive industry Version: ESD Peak pulse power dissipation: 40W Breakdown voltage: 25.65...28.35V Leakage current: 50nA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2950 Stücke: Lieferzeit 7-14 Tag (e) |
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PJMBZ27V-AU_R2_000A1 | PanJit Semiconductor | PJMBZ27V-AU-R2 Protection diodes - arrays |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMBZ33A-AU_R1_007A1 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMBZ5V6A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ5V6A-AU-R1 Protection diodes - arrays |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMBZ6V2A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ6V2A-AU-R1 Protection diodes - arrays |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMBZ6V8A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ6V8A-AU-R1 Protection diodes - arrays |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMBZ9V1A-AU_R1_007A1 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Case: SOT23 Max. off-state voltage: 6V Semiconductor structure: common anode; double Breakdown voltage: 8.65...9.56V Leakage current: 0.3µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 24W Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMBZ9V1A-AU_R1_007A1 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Case: SOT23 Max. off-state voltage: 6V Semiconductor structure: common anode; double Breakdown voltage: 8.65...9.56V Leakage current: 0.3µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 24W Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMD280N60E1_L2_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 49.1W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMD280N60E1_L2_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 49.1W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMD360N60EC_L2_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMD360N60EC_L2_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMD390N65EC_L2_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMD580N60E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMD580N60E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMD600N65E1_L2_00001 | PanJit Semiconductor | PJMD600N65E1-L2 SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMD900N60EC_L2_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMD990N65EC_L2_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMF099N60EC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 14W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A Gate charge: 60nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMF099N60EC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 14W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A Gate charge: 60nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMF120N60EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 33W Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMF120N60EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 33W Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMF130N65EC_T0_006A1 | PanJit Semiconductor | PJMF130N65EC-T0 THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMF190N60E1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMF210N65EC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 32W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 34nC Pulsed drain current: 42A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMF210N65EC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 32W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 34nC Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMF280N60E1_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMF280N60E1_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMF280N65E1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMF360N60EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMF360N60EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMF390N65EC_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMF580N60E1_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMF580N60E1_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMF600N65E1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMF990N65EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMF990N65EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Pulsed drain current: 212A Power dissipation: 200W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 144nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Pulsed drain current: 212A Power dissipation: 200W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 144nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMH120N60EC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Case: TO247AD-3 Type of transistor: N-MOSFET Power dissipation: 235W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMH120N60EC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Case: TO247AD-3 Type of transistor: N-MOSFET Power dissipation: 235W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMH190N60E1_T0_00601 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 69A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 69A |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMP210N65EC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMP210N65EC_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMP360N60EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJMP360N60EC_T0_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PJMP390N65EC_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMP900N60EC_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJMP990N65EC_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJQ1908-AU_R1_002A1 | PanJit Semiconductor | PJQ1908-AU-R1 SMD N channel transistors |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJQ1908_R1_00201 | PanJit Semiconductor | PJQ1908-R1 SMD N channel transistors |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJQ2460-AU_R1_000A1 | PanJit Semiconductor |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PJQ4401P-AU_R2_000A1 | PanJit Semiconductor |
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PJQ4403P_R2_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
PJMBZ27A-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
PJMBZ27A-AU-R1 Protection diodes - arrays
PJMBZ27A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMBZ27V-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Peak pulse power dissipation: 40W
Breakdown voltage: 25.65...28.35V
Leakage current: 50nA
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Peak pulse power dissipation: 40W
Breakdown voltage: 25.65...28.35V
Leakage current: 50nA
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
463+ | 0.15 EUR |
582+ | 0.12 EUR |
642+ | 0.11 EUR |
1000+ | 0.07 EUR |
1003+ | 0.07 EUR |
1060+ | 0.07 EUR |
PJMBZ27V-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Peak pulse power dissipation: 40W
Breakdown voltage: 25.65...28.35V
Leakage current: 50nA
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Peak pulse power dissipation: 40W
Breakdown voltage: 25.65...28.35V
Leakage current: 50nA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
463+ | 0.15 EUR |
582+ | 0.12 EUR |
642+ | 0.11 EUR |
1000+ | 0.07 EUR |
1003+ | 0.07 EUR |
1060+ | 0.07 EUR |
PJMBZ27V-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
PJMBZ27V-AU-R2 Protection diodes - arrays
PJMBZ27V-AU-R2 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMBZ33A-AU_R1_007A1 |
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Hersteller: PanJit Semiconductor
PJMBZ33A-AU-R1 Protection diodes - arrays
PJMBZ33A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMBZ5V6A-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
PJMBZ5V6A-AU-R1 Protection diodes - arrays
PJMBZ5V6A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMBZ6V2A-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
PJMBZ6V2A-AU-R1 Protection diodes - arrays
PJMBZ6V2A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMBZ6V8A-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
PJMBZ6V8A-AU-R1 Protection diodes - arrays
PJMBZ6V8A-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMBZ9V1A-AU_R1_007A1 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMBZ9V1A-AU_R1_007A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD280N60E1_L2_00601 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD280N60E1_L2_00601 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD360N60EC_L2_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD360N60EC_L2_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD390N65EC_L2_00001 |
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Hersteller: PanJit Semiconductor
PJMD390N65EC-L2 SMD N channel transistors
PJMD390N65EC-L2 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD580N60E1_L2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD580N60E1_L2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD600N65E1_L2_00001 |
Hersteller: PanJit Semiconductor
PJMD600N65E1-L2 SMD N channel transistors
PJMD600N65E1-L2 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD900N60EC_L2_00001 |
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Hersteller: PanJit Semiconductor
PJMD900N60EC-L2 SMD N channel transistors
PJMD900N60EC-L2 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMD990N65EC_L2_00001 |
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Hersteller: PanJit Semiconductor
PJMD990N65EC-L2 SMD N channel transistors
PJMD990N65EC-L2 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF099N60EC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF099N60EC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF120N60EC_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 33W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 33W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF120N60EC_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 33W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 33W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF130N65EC_T0_006A1 |
Hersteller: PanJit Semiconductor
PJMF130N65EC-T0 THT N channel transistors
PJMF130N65EC-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF190N60E1_T0_00001 |
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Hersteller: PanJit Semiconductor
PJMF190N60E1-T0 THT N channel transistors
PJMF190N60E1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF210N65EC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF210N65EC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF280N60E1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF280N60E1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF280N65E1_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
PJMF280N65E1-T0 THT N channel transistors
PJMF280N65E1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF360N60EC_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF360N60EC_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF390N65EC_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
PJMF390N65EC-T0 THT N channel transistors
PJMF390N65EC-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF580N60E1_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF580N60E1_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF600N65E1_T0_00001 |
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Hersteller: PanJit Semiconductor
PJMF600N65E1-T0 THT N channel transistors
PJMF600N65E1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF990N65EC_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMF990N65EC_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMH040N60EC_T0_00201 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMH040N60EC_T0_00201 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMH074N60FRC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMH074N60FRC_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMH120N60EC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMH120N60EC_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMH190N60E1_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
PJMH190N60E1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMP120N60EC_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
21+ | 3.40 EUR |
1000+ | 2.12 EUR |
PJMP120N60EC_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
PJMP210N65EC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMP210N65EC_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMP360N60EC_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMP360N60EC_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PJMP390N65EC_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
PJMP390N65EC-T0 THT N channel transistors
PJMP390N65EC-T0 THT N channel transistors
Produkt ist nicht verfügbar
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PJMP900N60EC_T0_00001 |
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Hersteller: PanJit Semiconductor
PJMP900N60EC-T0 THT N channel transistors
PJMP900N60EC-T0 THT N channel transistors
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PJMP990N65EC_T0_00001 |
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Hersteller: PanJit Semiconductor
PJMP990N65EC-T0 THT N channel transistors
PJMP990N65EC-T0 THT N channel transistors
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PJQ1908-AU_R1_002A1 |
Hersteller: PanJit Semiconductor
PJQ1908-AU-R1 SMD N channel transistors
PJQ1908-AU-R1 SMD N channel transistors
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PJQ1908_R1_00201 |
Hersteller: PanJit Semiconductor
PJQ1908-R1 SMD N channel transistors
PJQ1908-R1 SMD N channel transistors
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PJQ2460-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJQ2460-AU-R1 SMD N channel transistors
PJQ2460-AU-R1 SMD N channel transistors
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PJQ4401P-AU_R2_000A1 |
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Hersteller: PanJit Semiconductor
PJQ4401P-AU-R2 SMD P channel transistors
PJQ4401P-AU-R2 SMD P channel transistors
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PJQ4403P_R2_00001 |
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Hersteller: PanJit Semiconductor
PJQ4403P-R2 SMD P channel transistors
PJQ4403P-R2 SMD P channel transistors
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