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PJMF190N60E1_T0_00001 PJMF190N60E1_T0_00001 PanJit Semiconductor PJMF190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.2 EUR
25+2.96 EUR
27+2.73 EUR
50+2.53 EUR
100+2.32 EUR
250+2.07 EUR
500+1.89 EUR
Mindestbestellmenge: 23
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PJMF190N60E1_T0_00001 PJMF190N60E1_T0_00001 PanJit Semiconductor PJMF190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
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23+3.2 EUR
25+2.96 EUR
27+2.73 EUR
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PJMF190N65FR2_T0_00601 PanJit Semiconductor PJMF190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF210N65EC_T0_00601 PJMF210N65EC_T0_00601 PanJit Semiconductor PJMF210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
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23+3.25 EUR
40+1.82 EUR
50+1.64 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
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PJMF210N65EC_T0_00601 PJMF210N65EC_T0_00601 PanJit Semiconductor PJMF210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
auf Bestellung 46 Stücke:
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23+3.25 EUR
40+1.82 EUR
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PJMF280N60E1_T0_00001 PanJit Semiconductor PJMF280N60E1.pdf PJMF280N60E1-T0 THT N channel transistors
auf Bestellung 96 Stücke:
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55+1.3 EUR
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PJMF280N65E1_T0_00001 PJMF280N65E1_T0_00001 PanJit Semiconductor PJMF280N65E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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26+2.83 EUR
34+2.12 EUR
50+1.89 EUR
100+1.76 EUR
250+1.69 EUR
500+1.52 EUR
1000+1.49 EUR
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PJMF280N65E1_T0_00001 PJMF280N65E1_T0_00001 PanJit Semiconductor PJMF280N65E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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PJMF360N60EC_T0_00001 PJMF360N60EC_T0_00001 PanJit Semiconductor PJMF360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJMF390N65EC_T0_00001 PJMF390N65EC_T0_00001 PanJit Semiconductor PJMF390N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
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43+1.67 EUR
59+1.22 EUR
64+1.13 EUR
100+1.1 EUR
250+1.03 EUR
500+1 EUR
1000+0.96 EUR
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PJMF390N65EC_T0_00001 PJMF390N65EC_T0_00001 PanJit Semiconductor PJMF390N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
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43+1.67 EUR
59+1.22 EUR
64+1.13 EUR
100+1.1 EUR
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PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 PanJit Semiconductor PJMF580N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.58Ω
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of channel: enhancement
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PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 PanJit Semiconductor PJMF990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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PJMH040N60EC_T0_00201 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
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PJMH060N65FR2_T0_00601 PanJit Semiconductor PJMH060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRCH_T0_00601 PanJit Semiconductor PJMH074N60FRCH.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRC_T0_00601 PJMH074N60FRC_T0_00601 PanJit Semiconductor PJMH074N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
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PJMH080N65FR2_T0_00601 PanJit Semiconductor PJMH080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH099N60EC_T0_00601 PanJit Semiconductor PJMH099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 51nC
On-state resistance: 0.12Ω
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Drain-source voltage: 600V
Kind of channel: enhancement
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PJMH125N60FRC_T0_00601 PanJit Semiconductor PJMH125N60FRC Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Case: TO247AD-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 30V
Drain current: 30A
Drain-source voltage: 600V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH190N60E1_T0_00601 PanJit Semiconductor PJMH190N60E1.pdf PJMH190N60E1-T0 THT N channel transistors
auf Bestellung 10 Stücke:
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10+7.15 EUR
24+2.97 EUR
1020+1.96 EUR
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PJMH190N65FR2_T0_00601 PanJit Semiconductor PJMH190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMK040N60EC_T0_00201 PanJit Semiconductor PJMK040N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMK074N60FRCH_T0_00201 PanJit Semiconductor PJMK074N60FRCH.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP060N65FR2_T0_00601 PanJit Semiconductor PJMP060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP080N65FR2_T0_00601 PanJit Semiconductor PJMP080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP099N60EC_T0_00601 PanJit Semiconductor PJMP099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.48 EUR
18+4 EUR
50+3.36 EUR
100+3.02 EUR
250+2.79 EUR
500+2.67 EUR
1000+2.4 EUR
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
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16+4.48 EUR
18+4 EUR
50+3.36 EUR
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PJMP125N60FRC_T0_00601 PanJit Semiconductor PJMP125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Produkt ist nicht verfügbar
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PJMP130N65EC_T0_00001 PanJit Semiconductor PJMP130N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP190N65FR2_T0_00601 PanJit Semiconductor PJMP190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP390N65EC_T0_00001 PJMP390N65EC_T0_00001 PanJit Semiconductor PJMP390N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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PJMP990N65EC_T0_00001 PJMP990N65EC_T0_00001 PanJit Semiconductor PJMP990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJP125N06SA-AU_T0_006A1 PanJit Semiconductor PJP125N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4435EP-AU_R2_002A1 PanJit Semiconductor PJQ4435EP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4435EP_R2_00201 PanJit Semiconductor PJQ4435EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ4468AP-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Kind of package: reel; tape
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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PJQ5423_R2_00001 PanJit Semiconductor PJQ5423.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ5431E-AU_R2_006A1 PanJit Semiconductor PJQ5431E-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; DFN5060-8
Application: automotive industry
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 25V
Drain-source voltage: 30V
Drain current: 86A
Produkt ist nicht verfügbar
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PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf PJQ5544-AU-R2 SMD N channel transistors
auf Bestellung 1952 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.09 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 35
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PJQ5808-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJS6403_S1_00001 PJS6403_S1_00001 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6
Case: SOT23-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6.4A
Pulsed drain current: -46A
Drain-source voltage: -30V
Gate charge: 7.8nC
On-state resistance: 46mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJS6421_S1_00001 PanJit Semiconductor PJS6421.pdf PJS6421-S1 SMD P channel transistors
auf Bestellung 2931 Stücke:
Lieferzeit 7-14 Tag (e)
141+0.51 EUR
491+0.15 EUR
521+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 141
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PJS6601_S1_00001 PanJit Semiconductor PJS6601-S1 Multi channel transistors
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 143
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PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
auf Bestellung 2095 Stücke:
Lieferzeit 7-14 Tag (e)
348+0.21 EUR
916+0.078 EUR
968+0.074 EUR
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PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf PJSD05TS-AU-R1 Unidirectional TVS SMD diodes
auf Bestellung 4658 Stücke:
Lieferzeit 7-14 Tag (e)
285+0.25 EUR
747+0.096 EUR
794+0.09 EUR
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PJSD05W_R1_00001 PanJit Semiconductor PJSD03W_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 7.2V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 7.2V
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
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PJSD36CW_R1_00001 PanJit Semiconductor PJSD05CW_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Leakage current: 1µA
Produkt ist nicht verfügbar
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PJSD36W_R1_00001 PanJit Semiconductor PJSD36W-R1 Unidirectional TVS SMD diodes
auf Bestellung 4635 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 209
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PJSOT24C-05-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; unidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Application: automotive industry
Produkt ist nicht verfügbar
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PJT138K-AU_R1_000A1 PanJit Semiconductor PJT138K-AU-R1 Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
211+0.34 EUR
858+0.083 EUR
908+0.079 EUR
3000+0.076 EUR
Mindestbestellmenge: 211
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PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2685 Stücke:
Lieferzeit 7-14 Tag (e)
114+0.63 EUR
181+0.4 EUR
283+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 114
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PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
181+0.4 EUR
283+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 114
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PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf PJT7603-R1 Multi channel transistors
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)
207+0.35 EUR
858+0.083 EUR
908+0.079 EUR
Mindestbestellmenge: 207
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PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf PJT7800-R1 Multi channel transistors
auf Bestellung 5968 Stücke:
Lieferzeit 7-14 Tag (e)
157+0.46 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 157
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PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf PJT7801-R1 Multi channel transistors
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
122+0.59 EUR
715+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 122
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PJMF190N60E1_T0_00001 PJMF190N60E1.pdf
PJMF190N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.2 EUR
25+2.96 EUR
27+2.73 EUR
50+2.53 EUR
100+2.32 EUR
250+2.07 EUR
500+1.89 EUR
Mindestbestellmenge: 23
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PJMF190N60E1_T0_00001 PJMF190N60E1.pdf
PJMF190N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
25+2.96 EUR
27+2.73 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
PJMF190N65FR2_T0_00601 PJMF190N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF210N65EC_T0_00601 PJMF210N65EC.pdf
PJMF210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.25 EUR
40+1.82 EUR
50+1.64 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
Mindestbestellmenge: 23
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PJMF210N65EC_T0_00601 PJMF210N65EC.pdf
PJMF210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
40+1.82 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
PJMF280N60E1_T0_00001 PJMF280N60E1.pdf
Hersteller: PanJit Semiconductor
PJMF280N60E1-T0 THT N channel transistors
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.96 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
PJMF280N65E1_T0_00001 PJMF280N65E1.pdf
PJMF280N65E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.83 EUR
34+2.12 EUR
50+1.89 EUR
100+1.76 EUR
250+1.69 EUR
500+1.52 EUR
1000+1.49 EUR
Mindestbestellmenge: 26
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PJMF280N65E1_T0_00001 PJMF280N65E1.pdf
PJMF280N65E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
34+2.12 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
PJMF360N60EC_T0_00001 PJMF360N60EC.pdf
PJMF360N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF390N65EC_T0_00001 PJMF390N65EC.pdf
PJMF390N65EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.67 EUR
59+1.22 EUR
64+1.13 EUR
100+1.1 EUR
250+1.03 EUR
500+1 EUR
1000+0.96 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
PJMF390N65EC_T0_00001 PJMF390N65EC.pdf
PJMF390N65EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
59+1.22 EUR
64+1.13 EUR
100+1.1 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.58Ω
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
PJMF990N65EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH040N60EC_T0_00201
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH060N65FR2_T0_00601 PJMH060N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH074N60FRCH_T0_00601 PJMH074N60FRCH.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH074N60FRC_T0_00601 PJMH074N60FRC.pdf
PJMH074N60FRC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH080N65FR2_T0_00601 PJMH080N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH099N60EC_T0_00601 PJMH099N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH120N60EC_T0_00601 PJMH120N60EC.pdf
PJMH120N60EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 51nC
On-state resistance: 0.12Ω
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Drain-source voltage: 600V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH125N60FRC_T0_00601 PJMH125N60FRC
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Case: TO247AD-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 30V
Drain current: 30A
Drain-source voltage: 600V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH190N60E1_T0_00601 PJMH190N60E1.pdf
Hersteller: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.15 EUR
24+2.97 EUR
1020+1.96 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PJMH190N65FR2_T0_00601 PJMH190N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMK040N60EC_T0_00201 PJMK040N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMK074N60FRCH_T0_00201 PJMK074N60FRCH.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP060N65FR2_T0_00601 PJMP060N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP080N65FR2_T0_00601 PJMP080N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP099N60EC_T0_00601 PJMP099N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.48 EUR
18+4 EUR
50+3.36 EUR
100+3.02 EUR
250+2.79 EUR
500+2.67 EUR
1000+2.4 EUR
Mindestbestellmenge: 16
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
18+4 EUR
50+3.36 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PJMP125N60FRC_T0_00601 PJMP125N60FRC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Produkt ist nicht verfügbar
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PJMP130N65EC_T0_00001 PJMP130N65EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP190N65FR2_T0_00601 PJMP190N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
PJMP360N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP390N65EC_T0_00001 PJMP390N65EC.pdf
PJMP390N65EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP990N65EC_T0_00001 PJMP990N65EC.pdf
PJMP990N65EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJP125N06SA-AU_T0_006A1 PJP125N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4435EP-AU_R2_002A1 PJQ4435EP-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4435EP_R2_00201 PJQ4435EP.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ4468AP-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Kind of package: reel; tape
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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PJQ5423_R2_00001 PJQ5423.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ5431E-AU_R2_006A1 PJQ5431E-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; DFN5060-8
Application: automotive industry
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 25V
Drain-source voltage: 30V
Drain current: 86A
Produkt ist nicht verfügbar
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PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
Hersteller: PanJit Semiconductor
PJQ5544-AU-R2 SMD N channel transistors
auf Bestellung 1952 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
35+2.09 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 35
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PJQ5808-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJS6403_S1_00001
PJS6403_S1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6
Case: SOT23-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6.4A
Pulsed drain current: -46A
Drain-source voltage: -30V
Gate charge: 7.8nC
On-state resistance: 46mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJS6421_S1_00001 PJS6421.pdf
Hersteller: PanJit Semiconductor
PJS6421-S1 SMD P channel transistors
auf Bestellung 2931 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
141+0.51 EUR
491+0.15 EUR
521+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 141
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PJS6601_S1_00001
Hersteller: PanJit Semiconductor
PJS6601-S1 Multi channel transistors
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
143+0.5 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 143
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PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
auf Bestellung 2095 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
348+0.21 EUR
916+0.078 EUR
968+0.074 EUR
Mindestbestellmenge: 348
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PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
PJSD05TS-AU-R1 Unidirectional TVS SMD diodes
auf Bestellung 4658 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
285+0.25 EUR
747+0.096 EUR
794+0.09 EUR
Mindestbestellmenge: 285
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PJSD05W_R1_00001 PJSD03W_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.2V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 7.2V
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
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PJSD36CW_R1_00001 PJSD05CW_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Leakage current: 1µA
Produkt ist nicht verfügbar
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PJSD36W_R1_00001
Hersteller: PanJit Semiconductor
PJSD36W-R1 Unidirectional TVS SMD diodes
auf Bestellung 4635 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
209+0.34 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 209
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PJSOT24C-05-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; unidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Application: automotive industry
Produkt ist nicht verfügbar
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PJT138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
PJT138K-AU-R1 Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
211+0.34 EUR
858+0.083 EUR
908+0.079 EUR
3000+0.076 EUR
Mindestbestellmenge: 211
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PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2685 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
114+0.63 EUR
181+0.4 EUR
283+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
181+0.4 EUR
283+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
PJT7603_R1_00001 PJT7603.pdf
Hersteller: PanJit Semiconductor
PJT7603-R1 Multi channel transistors
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
207+0.35 EUR
858+0.083 EUR
908+0.079 EUR
Mindestbestellmenge: 207
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800.pdf
Hersteller: PanJit Semiconductor
PJT7800-R1 Multi channel transistors
auf Bestellung 5968 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
157+0.46 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801.pdf
Hersteller: PanJit Semiconductor
PJT7801-R1 Multi channel transistors
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
122+0.59 EUR
715+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
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