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PJA3415A-AU_R1_000A1 PJA3415A-AU_R1_000A1 PanJit Semiconductor PJA3415A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 32998 Stücke:
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200+0.36 EUR
271+0.26 EUR
511+0.14 EUR
569+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
9000+0.099 EUR
Mindestbestellmenge: 200
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PJA3415AE-AU_R1_000A1 PanJit Semiconductor PJA3415AE-AU.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363
Mounting: SMD
Gate-source voltage: 10V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
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PJA3415AE_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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PJA3430-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
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PJA3430_R1_00001 PJA3430_R1_00001 PanJit Semiconductor PJA3430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
auf Bestellung 2330 Stücke:
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432+0.17 EUR
707+0.1 EUR
968+0.074 EUR
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PJA3432-AU_R1_000A1 PJA3432-AU_R1_000A1 PanJit Semiconductor PJA3432-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
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432+0.17 EUR
687+0.1 EUR
946+0.076 EUR
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PJA3433-AU_R1_000A1 PJA3433-AU_R1_000A1 PanJit Semiconductor PJA3433-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 232 Stücke:
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PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
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481+0.15 EUR
650+0.11 EUR
725+0.099 EUR
1000+0.079 EUR
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PJA3434-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
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PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
auf Bestellung 3740 Stücke:
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463+0.15 EUR
792+0.09 EUR
1117+0.064 EUR
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PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
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323+0.22 EUR
500+0.14 EUR
666+0.11 EUR
1000+0.095 EUR
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PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
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336+0.21 EUR
542+0.13 EUR
738+0.097 EUR
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PJA3436_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
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PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
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275+0.26 EUR
439+0.16 EUR
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PJA3438_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
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PJA3439-AU_R1_000A1 PJA3439-AU_R1_000A1 PanJit Semiconductor PJA3439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
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PJA3439_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
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PJA3471_R1_00501 PJA3471_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Pulsed drain current: -3.6A
Drain current: -900mA
Gate charge: 8nC
On-state resistance: 0.7Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 9065 Stücke:
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148+0.49 EUR
260+0.28 EUR
410+0.17 EUR
496+0.14 EUR
569+0.13 EUR
1000+0.12 EUR
3000+0.11 EUR
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PJB100N04S-AU_R2_002A1 PanJit Semiconductor PJB100N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJB100N04V-AU_R2_002A1 PanJit Semiconductor PJB100N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJB120N03S-AU_R2_002A1 PanJit Semiconductor PJB120N03S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJB120N04V-AU_R2_002A1 PanJit Semiconductor PJB120N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Mounting: SMD
Case: TO220AB
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.18Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -6A
Drain current: -1.5A
Gate charge: 11nC
Power dissipation: 0.35W
Gate-source voltage: ±12V
Kind of package: reel; tape
auf Bestellung 3105 Stücke:
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228+0.31 EUR
355+0.2 EUR
417+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
3000+0.11 EUR
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PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
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500+0.14 EUR
685+0.1 EUR
736+0.097 EUR
782+0.092 EUR
1000+0.084 EUR
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PJC7410_R1_00001 PanJit Semiconductor PJC7410.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD100N06SA-AU_L2_006A1 PanJit Semiconductor PJD100N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD10P10A_L2_00601 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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PJD15P06A-AU_L2_000A1 PJD15P06A-AU_L2_000A1 PanJit Semiconductor PJD15P06A-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -60A
Drain current: -15A
Gate charge: 17nC
On-state resistance: 85mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Application: automotive industry
Kind of channel: enhancement
Case: TO252AA
Type of transistor: P-MOSFET
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PJD15P06A_L2_00601 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Gate-source voltage: 20V
Kind of channel: enhancement
Case: TO252AA
Type of transistor: N-MOSFET
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PJD25N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; Idm: 168A; 18W; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 18W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 168A
Produkt ist nicht verfügbar
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PJD30N04S-AU_L2_002A1 PanJit Semiconductor PJD30N04S-AU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N06SA-AU_L2_006A1 PanJit Semiconductor PJD60N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60P04E-AU_L2_006A1 PanJit Semiconductor PJD60P04E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: -40V
Drain current: -61A
Power dissipation: 38W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel
Polarisation: unipolar
Pulsed drain current: -171A
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PJD80N03_L2_00001 PanJit Semiconductor PJx80N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD80N06SA-AU_L2_006A1 PanJit Semiconductor PJD80N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJE28VM2FN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
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PJE28VM2TS_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
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PJE5UFN10A-AU_R1_000A1 PanJit Semiconductor PJE5UFN10A-AU Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Application: automotive industry
Produkt ist nicht verfügbar
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PJE8407_R1_00001 PanJit Semiconductor PJE8407.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT523
Drain current: 0.5A
Gate-source voltage: 10V
Drain-source voltage: 20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJE8428_R1_00001 PanJit Semiconductor PJE8428 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Produkt ist nicht verfügbar
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PJEC12VM1TA-AU_R1_000A1 PanJit Semiconductor PJEC12VM1TA-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS
Mounting: SMD
Case: SOT23
Capacitance: 10pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Breakdown voltage: 16.5V
Produkt ist nicht verfügbar
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PJEC12VM1TA_R1_00001 PanJit Semiconductor PJEC12VM1TA Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Semiconductor structure: bidirectional
Type of diode: TVS
Mounting: SMD
Case: SOT23
Capacitance: 10pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Breakdown voltage: 16.5V
Produkt ist nicht verfügbar
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU_R1_000A1 PanJit Semiconductor PJEC2415VM1WS-AU Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Version: ESD
Semiconductor structure: asymmetric; bidirectional
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 0.16kW
Produkt ist nicht verfügbar
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PJEC2415VM1WS_R1_00001 PanJit Semiconductor PJEC2415VM1WS.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Type of diode: TVS
Leakage current: 50nA
Number of channels: 1
Semiconductor structure: bidirectional
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Peak pulse power dissipation: 0.16kW
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
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PJEC24MTA-AU_R1_000A1 PanJit Semiconductor PJEC24MTA-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Case: SOT23
Type of diode: TVS
Capacitance: 11pF
Leakage current: 50nA
Number of channels: 2
Semiconductor structure: bidirectional
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
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PJEC24MTA_R1_00001 PanJit Semiconductor PJEC24MTA.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 11pF
Leakage current: 50nA
Number of channels: 2
Semiconductor structure: bidirectional
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
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PJGBLC03-AU_R1_000A1 PanJit Semiconductor PJGBLC03-AU_C24C-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 4.75V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 4.75V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Application: automotive industry
Produkt ist nicht verfügbar
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PJGBLC03C-AU_R1_000A1 PJGBLC03C-AU_R1_000A1 PanJit Semiconductor PJGBLC24C-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Version: ESD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PJGBLC03C_R1_00001 PJGBLC03C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJGBLC03_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 5.25V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Produkt ist nicht verfügbar
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PJMB125N60FRC_R2_00201 PanJit Semiconductor PJMB125N60FRC Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO263AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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PJMB130N65EC_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMB130N65EC_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMB210N65EC_R2_00601 PanJit Semiconductor PJMB210N65EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Case: TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.21Ω
Drain current: 19A
Gate-source voltage: ±30V
Pulsed drain current: 42A
Power dissipation: 150W
Drain-source voltage: 650V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJMBZ33A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 50nA
Produkt ist nicht verfügbar
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PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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PJMD190N65FR2_L2_00601 PanJit Semiconductor PJMD190N65FR2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD280N60E1_L2_00601 PanJit Semiconductor PJMD280N60E1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD360N60EC_L2_00001 PJMD360N60EC_L2_00001 PanJit Semiconductor PJMD360N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD580N60E1_L2_00001 PJMD580N60E1_L2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3415A-AU_R1_000A1 PJA3415A-AU.pdf
PJA3415A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 32998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
271+0.26 EUR
511+0.14 EUR
569+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
9000+0.099 EUR
Mindestbestellmenge: 200
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PJA3415AE-AU_R1_000A1 PJA3415AE-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363
Mounting: SMD
Gate-source voltage: 10V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Produkt ist nicht verfügbar
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PJA3415AE_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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PJA3430-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3430_R1_00001 PJA3430.pdf
PJA3430_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
432+0.17 EUR
707+0.1 EUR
968+0.074 EUR
1087+0.066 EUR
Mindestbestellmenge: 264
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PJA3432-AU_R1_000A1 PJA3432-AU.pdf
PJA3432-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 1735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
432+0.17 EUR
687+0.1 EUR
946+0.076 EUR
Mindestbestellmenge: 264
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PJA3433-AU_R1_000A1 PJA3433-AU.pdf
PJA3433-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
232+0.31 EUR
Mindestbestellmenge: 232
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PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
auf Bestellung 3652 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
481+0.15 EUR
650+0.11 EUR
725+0.099 EUR
1000+0.079 EUR
3000+0.077 EUR
Mindestbestellmenge: 385
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PJA3434-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
auf Bestellung 3740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
463+0.15 EUR
792+0.09 EUR
1117+0.064 EUR
1194+0.06 EUR
Mindestbestellmenge: 295
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PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
auf Bestellung 5960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
323+0.22 EUR
500+0.14 EUR
666+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
Mindestbestellmenge: 193
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PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
336+0.21 EUR
542+0.13 EUR
738+0.097 EUR
1000+0.086 EUR
Mindestbestellmenge: 200
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PJA3436_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
275+0.26 EUR
439+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 179
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PJA3438_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3439-AU_R1_000A1 PJA3439-AU.pdf
PJA3439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3439_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3471_R1_00501
PJA3471_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Pulsed drain current: -3.6A
Drain current: -900mA
Gate charge: 8nC
On-state resistance: 0.7Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 9065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
260+0.28 EUR
410+0.17 EUR
496+0.14 EUR
569+0.13 EUR
1000+0.12 EUR
3000+0.11 EUR
Mindestbestellmenge: 148
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PJB100N04S-AU_R2_002A1 PJB100N04S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB100N04V-AU_R2_002A1 PJB100N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJB120N03S-AU_R2_002A1 PJB120N03S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJB120N04V-AU_R2_002A1 PJB120N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Mounting: SMD
Case: TO220AB
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.18Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -6A
Drain current: -1.5A
Gate charge: 11nC
Power dissipation: 0.35W
Gate-source voltage: ±12V
Kind of package: reel; tape
auf Bestellung 3105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
228+0.31 EUR
355+0.2 EUR
417+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
3000+0.11 EUR
Mindestbestellmenge: 139
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PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 7545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
685+0.1 EUR
736+0.097 EUR
782+0.092 EUR
1000+0.084 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410_R1_00001 PJC7410.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD100N06SA-AU_L2_006A1 PJD100N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD10P10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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PJD15P06A-AU_L2_000A1 PJD15P06A-AU
PJD15P06A-AU_L2_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -60A
Drain current: -15A
Gate charge: 17nC
On-state resistance: 85mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Application: automotive industry
Kind of channel: enhancement
Case: TO252AA
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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PJD15P06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Gate-source voltage: 20V
Kind of channel: enhancement
Case: TO252AA
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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PJD25N04V-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; Idm: 168A; 18W; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 18W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 168A
Produkt ist nicht verfügbar
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PJD30N04S-AU_L2_002A1 PJD30N04S-AU
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N06SA-AU_L2_006A1 PJD60N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60P04E-AU_L2_006A1 PJD60P04E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: -40V
Drain current: -61A
Power dissipation: 38W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel
Polarisation: unipolar
Pulsed drain current: -171A
Produkt ist nicht verfügbar
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PJD80N03_L2_00001 PJx80N03.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD80N06SA-AU_L2_006A1 PJD80N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJE28VM2FN2_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
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PJE28VM2TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
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PJE5UFN10A-AU_R1_000A1 PJE5UFN10A-AU
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Application: automotive industry
Produkt ist nicht verfügbar
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PJE8407_R1_00001 PJE8407.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT523
Drain current: 0.5A
Gate-source voltage: 10V
Drain-source voltage: 20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJE8428_R1_00001 PJE8428
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Produkt ist nicht verfügbar
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PJEC12VM1TA-AU_R1_000A1 PJEC12VM1TA-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS
Mounting: SMD
Case: SOT23
Capacitance: 10pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Breakdown voltage: 16.5V
Produkt ist nicht verfügbar
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PJEC12VM1TA_R1_00001 PJEC12VM1TA
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Semiconductor structure: bidirectional
Type of diode: TVS
Mounting: SMD
Case: SOT23
Capacitance: 10pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Breakdown voltage: 16.5V
Produkt ist nicht verfügbar
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU
PJEC2415VM1WS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Version: ESD
Semiconductor structure: asymmetric; bidirectional
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 0.16kW
Produkt ist nicht verfügbar
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PJEC2415VM1WS_R1_00001 PJEC2415VM1WS.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Type of diode: TVS
Leakage current: 50nA
Number of channels: 1
Semiconductor structure: bidirectional
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Peak pulse power dissipation: 0.16kW
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
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PJEC24MTA-AU_R1_000A1 PJEC24MTA-AU.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Case: SOT23
Type of diode: TVS
Capacitance: 11pF
Leakage current: 50nA
Number of channels: 2
Semiconductor structure: bidirectional
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
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PJEC24MTA_R1_00001 PJEC24MTA.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 11pF
Leakage current: 50nA
Number of channels: 2
Semiconductor structure: bidirectional
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
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PJGBLC03-AU_R1_000A1 PJGBLC03-AU_C24C-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4.75V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 4.75V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Application: automotive industry
Produkt ist nicht verfügbar
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PJGBLC03C-AU_R1_000A1 PJGBLC24C-AU
PJGBLC03C-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Version: ESD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PJGBLC03C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC03C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
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PJGBLC03_R1_00001 PJGBLC03_C24C_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.25V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
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PJMB125N60FRC_R2_00201 PJMB125N60FRC
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO263AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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PJMB130N65EC_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJMB130N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJMB210N65EC_R2_00601 PJMB210N65EC.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Case: TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.21Ω
Drain current: 19A
Gate-source voltage: ±30V
Pulsed drain current: 42A
Power dissipation: 150W
Drain-source voltage: 650V
Kind of package: reel; tape
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PJMBZ33A-AU_R1_007A1 PJMBZ5V6A-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 50nA
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PJMBZ6V8A-AU_R1_007A1 PJMBZ5V6A-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
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PJMD190N65FR2_L2_00601 PJMD190N65FR2
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD280N60E1_L2_00601 PJMD280N60E1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD360N60EC_L2_00001 PJMD360N60EC.pdf
PJMD360N60EC_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD580N60E1_L2_00001
PJMD580N60E1_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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