Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1470) > Seite 14 nach 25
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PCDP05120G1_T0_00001 | PanJit Semiconductor |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 40A Power dissipation: 129.3W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 520A Max. forward voltage: 2V Leakage current: 50µA Anzahl je Verpackung: 1 Stücke |
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PCDP05120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 40A Power dissipation: 129.3W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 520A Max. forward voltage: 2V Leakage current: 50µA |
Produkt ist nicht verfügbar |
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| PCDP0665G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO220AC Kind of package: tube Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 57.7W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PCDP0665G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO220AC Kind of package: tube Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 57.7W |
Produkt ist nicht verfügbar |
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| PCDP08120G1_T0_00001 | PanJit Semiconductor |
PCDP08120G1-T0 THT Schottky diodes |
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| PCDP0865G1_T0_00001 | PanJit Semiconductor |
PCDP0865G1-T0 THT Schottky diodes |
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| PCDP10120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC Mounting: THT Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 640A Leakage current: 0.1mA Power dissipation: 151.5W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 76A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PCDP10120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC Mounting: THT Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 640A Leakage current: 0.1mA Power dissipation: 151.5W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 76A |
Produkt ist nicht verfügbar |
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PCDP1065G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC Power dissipation: 83.3W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PCDP1065G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC Power dissipation: 83.3W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA |
Produkt ist nicht verfügbar |
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| PCDP1265G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC Power dissipation: 102.7W Technology: SiC Max. off-state voltage: 650V Load current: 12A Max. load current: 52A Kind of package: tube Semiconductor structure: single diode Leakage current: 80µA Case: TO220AC Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 640A Max. forward voltage: 1.8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PCDP1265G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC Power dissipation: 102.7W Technology: SiC Max. off-state voltage: 650V Load current: 12A Max. load current: 52A Kind of package: tube Semiconductor structure: single diode Leakage current: 80µA Case: TO220AC Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 640A Max. forward voltage: 1.8V |
Produkt ist nicht verfügbar |
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 120A Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 120A Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W |
Produkt ist nicht verfügbar |
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| PCDP1665G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Max. load current: 72A Power dissipation: 136.4W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 720A Max. forward voltage: 1.8V Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PCDP1665G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Max. load current: 72A Power dissipation: 136.4W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 720A Max. forward voltage: 1.8V Leakage current: 0.1mA |
Produkt ist nicht verfügbar |
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PCDP20120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC Technology: SiC Power dissipation: 267.9W Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. load current: 152A Max. forward voltage: 2V Load current: 20A Max. forward impulse current: 960A Leakage current: 180µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PCDP20120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC Technology: SiC Power dissipation: 267.9W Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. load current: 152A Max. forward voltage: 2V Load current: 20A Max. forward impulse current: 960A Leakage current: 180µA |
Produkt ist nicht verfügbar |
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| PCDP2065G1_T0_00001 | PanJit Semiconductor |
PCDP2065G1-T0 THT Schottky diodes |
Produkt ist nicht verfügbar |
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PE1403M1Q_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape Mounting: SMD Case: DFN1006-2 Capacitance: 0.4pF Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Max. forward impulse current: 16A Breakdown voltage: 4V Leakage current: 50nA Semiconductor structure: unidirectional Max. off-state voltage: 3.3V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| PE1403M1Q_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape Mounting: SMD Case: DFN1006-2 Capacitance: 0.4pF Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Max. forward impulse current: 16A Breakdown voltage: 4V Leakage current: 50nA Semiconductor structure: unidirectional Max. off-state voltage: 3.3V |
Produkt ist nicht verfügbar |
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| PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; SOT23-6; reel,tape Type of diode: TVS array Mounting: SMD Case: SOT23-6 Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; SOT23-6; reel,tape Type of diode: TVS array Mounting: SMD Case: SOT23-6 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape Type of diode: TVS array Breakdown voltage: 6...9V Max. forward impulse current: 5A Semiconductor structure: unidirectional Mounting: SMD Case: SOT363 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.8pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape Type of diode: TVS array Breakdown voltage: 6...9V Max. forward impulse current: 5A Semiconductor structure: unidirectional Mounting: SMD Case: SOT363 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.8pF |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOD523 Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: ESD protection Max. off-state voltage: 5V Capacitance: 120pF Breakdown voltage: 6...7.5V Max. forward impulse current: 13A Anzahl je Verpackung: 25 Stücke |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOD523 Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: ESD protection Max. off-state voltage: 5V Capacitance: 120pF Breakdown voltage: 6...7.5V Max. forward impulse current: 13A |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 0.19pF Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 0.19pF |
Produkt ist nicht verfügbar |
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Capacitance: 0.6pF Mounting: SMD Case: DFN1006-2 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Breakdown voltage: 6.8...11.2V Leakage current: 75nA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Capacitance: 0.6pF Mounting: SMD Case: DFN1006-2 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Breakdown voltage: 6.8...11.2V Leakage current: 75nA |
Produkt ist nicht verfügbar |
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| PEC3202M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 2.5V Breakdown voltage: 2.6...4V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 20pF Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PEC3202M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 2.5V Breakdown voltage: 2.6...4V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 20pF |
Produkt ist nicht verfügbar |
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| PEC3205M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5...8V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 20pF Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PEC3205M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5...8V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 20pF |
Produkt ist nicht verfügbar |
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| PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...30.3V Max. forward impulse current: 7A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Capacitance: 30pF Application: automotive industry |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...30.3V Max. forward impulse current: 7A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Capacitance: 30pF Application: automotive industry Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23 Mounting: SMD Case: SOT23 Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Capacitance: 35pF Max. off-state voltage: 7...12V Semiconductor structure: bidirectional; double Max. forward impulse current: 8A Breakdown voltage: 7.5...13.3V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2040 Stücke: Lieferzeit 7-14 Tag (e) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23 Mounting: SMD Case: SOT23 Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Capacitance: 35pF Max. off-state voltage: 7...12V Semiconductor structure: bidirectional; double Max. forward impulse current: 8A Breakdown voltage: 7.5...13.3V |
auf Bestellung 2040 Stücke: Lieferzeit 14-21 Tag (e) |
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| PG4007-AU_R2_100A1 | PanJit Semiconductor |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA Mounting: THT Type of diode: rectifying Features of semiconductor devices: glass passivated Case: DO41 Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 50µA |
Produkt ist nicht verfügbar |
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| PG4007-AU_R2_100A1 | PanJit Semiconductor |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA Mounting: THT Type of diode: rectifying Features of semiconductor devices: glass passivated Case: DO41 Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 50µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJA138K-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.5A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA138K-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.5A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2840 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA138K-AU_R2_000A1 | PanJit Semiconductor | PJA138K-AU-R2 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PJA138K_R1_00001 | PanJit Semiconductor |
PJA138K-R1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 19.6A Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 60mΩ Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 19.6A Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 60mΩ |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2865 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2865 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3402_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 17.6A Drain-source voltage: 30V Drain current: 4.4A On-state resistance: 92mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3402_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 17.6A Drain-source voltage: 30V Drain current: 4.4A On-state resistance: 92mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±12V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3403_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.165Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| PJA3403_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.165Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PJA3404_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5105 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3404_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 5105 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3405-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 97mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PJA3405-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 97mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| PJA3406_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.4A Pulsed drain current: 17.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
| PCDP05120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 520A
Max. forward voltage: 2V
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 520A
Max. forward voltage: 2V
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP05120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 520A
Max. forward voltage: 2V
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 520A
Max. forward voltage: 2V
Leakage current: 50µA
Produkt ist nicht verfügbar
| PCDP0665G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP0665G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
Produkt ist nicht verfügbar
| PCDP08120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
PCDP08120G1-T0 THT Schottky diodes
PCDP08120G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDP0865G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
PCDP0865G1-T0 THT Schottky diodes
PCDP0865G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDP10120G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP10120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Produkt ist nicht verfügbar
| PCDP1065G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP1065G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Produkt ist nicht verfügbar
| PCDP1265G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP1265G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
| PCDP15120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP15120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Produkt ist nicht verfügbar
| PCDP1665G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP1665G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
| PCDP20120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP20120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
Produkt ist nicht verfügbar
| PCDP2065G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
PCDP2065G1-T0 THT Schottky diodes
PCDP2065G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PDZ5.1B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1105+ | 0.065 EUR |
| 1390+ | 0.051 EUR |
| 1570+ | 0.046 EUR |
| 1685+ | 0.042 EUR |
| 1750+ | 0.041 EUR |
| 1780+ | 0.04 EUR |
| 5000+ | 0.039 EUR |
| PDZ5.1B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1105+ | 0.065 EUR |
| 1390+ | 0.051 EUR |
| 1570+ | 0.046 EUR |
| 1685+ | 0.042 EUR |
| 1750+ | 0.041 EUR |
| 1780+ | 0.04 EUR |
| 5000+ | 0.039 EUR |
| PE1403M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PE1403M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Produkt ist nicht verfügbar
| PE1805C4A6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-6; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT23-6
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-6; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT23-6
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PE1805C4A6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-6; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT23-6
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-6; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT23-6
Kind of package: reel; tape
Produkt ist nicht verfügbar
| PE1805C4C6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 675+ | 0.11 EUR |
| 785+ | 0.091 EUR |
| 1020+ | 0.07 EUR |
| 1080+ | 0.066 EUR |
| 9000+ | 0.065 EUR |
| PE1805C4C6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 675+ | 0.11 EUR |
| 785+ | 0.091 EUR |
| 1020+ | 0.07 EUR |
| 1080+ | 0.066 EUR |
| PE4105C1ES_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Anzahl je Verpackung: 25 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Anzahl je Verpackung: 25 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1725+ | 0.042 EUR |
| 2275+ | 0.031 EUR |
| 2600+ | 0.028 EUR |
| 2950+ | 0.024 EUR |
| 3125+ | 0.023 EUR |
| 15000+ | 0.022 EUR |
| PE4105C1ES_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1725+ | 0.042 EUR |
| 2275+ | 0.031 EUR |
| 2600+ | 0.028 EUR |
| 2950+ | 0.024 EUR |
| 3125+ | 0.023 EUR |
| PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Produkt ist nicht verfügbar
| PEC1605M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PEC1605M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Produkt ist nicht verfügbar
| PEC3202M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6...4V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6...4V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PEC3202M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6...4V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6...4V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Produkt ist nicht verfügbar
| PEC3205M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PEC3205M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Produkt ist nicht verfügbar
| PEC3324C2A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 345+ | 0.21 EUR |
| 435+ | 0.17 EUR |
| 490+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 590+ | 0.12 EUR |
| PEC3324C2A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 345+ | 0.21 EUR |
| 435+ | 0.17 EUR |
| 490+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 590+ | 0.12 EUR |
| PEC33712C2A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Max. off-state voltage: 7...12V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Max. off-state voltage: 7...12V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2040 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 545+ | 0.13 EUR |
| 605+ | 0.12 EUR |
| 740+ | 0.097 EUR |
| 785+ | 0.092 EUR |
| 9000+ | 0.089 EUR |
| PEC33712C2A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Max. off-state voltage: 7...12V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Max. off-state voltage: 7...12V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
auf Bestellung 2040 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 545+ | 0.13 EUR |
| 605+ | 0.12 EUR |
| 740+ | 0.097 EUR |
| 785+ | 0.092 EUR |
| PG4007-AU_R2_100A1 |
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Case: DO41
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Case: DO41
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
Produkt ist nicht verfügbar
| PG4007-AU_R2_100A1 |
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Case: DO41
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Case: DO41
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJA138K-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1430+ | 0.05 EUR |
| 1740+ | 0.041 EUR |
| 2110+ | 0.034 EUR |
| 2235+ | 0.032 EUR |
| PJA138K-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1430+ | 0.05 EUR |
| 1740+ | 0.041 EUR |
| 2110+ | 0.034 EUR |
| 2235+ | 0.032 EUR |
| 9000+ | 0.031 EUR |
| PJA138K-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
PJA138K-AU-R2 SMD N channel transistors
PJA138K-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
| PJA138K_R1_00001 |
|
Hersteller: PanJit Semiconductor
PJA138K-R1 SMD N channel transistors
PJA138K-R1 SMD N channel transistors
Produkt ist nicht verfügbar
| PJA3400_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 60mΩ
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 60mΩ
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 365+ | 0.2 EUR |
| 585+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 785+ | 0.092 EUR |
| 820+ | 0.087 EUR |
| 9000+ | 0.084 EUR |
| PJA3400_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 60mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 60mΩ
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 365+ | 0.2 EUR |
| 585+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 785+ | 0.092 EUR |
| 820+ | 0.087 EUR |
| PJA3401A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2865 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 365+ | 0.2 EUR |
| 655+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 875+ | 0.082 EUR |
| 925+ | 0.078 EUR |
| 9000+ | 0.075 EUR |
| PJA3401A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2865 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 365+ | 0.2 EUR |
| 655+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 875+ | 0.082 EUR |
| 925+ | 0.078 EUR |
| PJA3402_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 675+ | 0.11 EUR |
| 800+ | 0.089 EUR |
| 890+ | 0.081 EUR |
| 1145+ | 0.063 EUR |
| 1210+ | 0.059 EUR |
| PJA3402_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 675+ | 0.11 EUR |
| 800+ | 0.089 EUR |
| 890+ | 0.081 EUR |
| 1145+ | 0.063 EUR |
| 1210+ | 0.059 EUR |
| PJA3403_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PJA3403_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJA3404_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5105 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 725+ | 0.099 EUR |
| 800+ | 0.09 EUR |
| 960+ | 0.075 EUR |
| 1015+ | 0.071 EUR |
| 3000+ | 0.068 EUR |
| PJA3404_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5105 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 725+ | 0.099 EUR |
| 800+ | 0.09 EUR |
| 960+ | 0.075 EUR |
| 1015+ | 0.071 EUR |
| 3000+ | 0.068 EUR |
| PJA3405-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJA3405-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PJA3406_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
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