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PE3324C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW
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PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
auf Bestellung 2750 Stücke:
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1000+0.072 EUR
1429+0.05 EUR
2033+0.035 EUR
2381+0.03 EUR
2500+0.029 EUR
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PE4105C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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PE4105C3C6_R1_00001 PanJit Semiconductor PE4105C3C6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PE4136C2A-AU_R1_000A1 PanJit Semiconductor PE4136C2A-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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PE4136C2A_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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PE4205M1Q_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
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PE4312C2A-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Produkt ist nicht verfügbar
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PE4312C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 8.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
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PE4312C2C-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Application: automotive industry
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PE4312CS_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
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PE4312ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
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PE4336ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
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PE4715L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
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PE4715L1Q_R1_00201 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
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PE4724L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
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PE4724L1Q_R1_00201 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
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PE4728L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
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PE9180C1A-AU_R1_007A1 PanJit Semiconductor PE9180C1A-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
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PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Produkt ist nicht verfügbar
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PEC1305S1Q_R1_00001 PanJit Semiconductor PEC1305S1Q.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Case: DFN0603-2
Type of diode: TVS
Capacitance: 0.25pF
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
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PEC1605M1Q-AU_R1_005A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
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PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Produkt ist nicht verfügbar
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PEC3205C2C_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
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PEC3205C2E_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
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PEC3205CS_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 8V
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
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PEC3205ES-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
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PEC3205ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
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PEC3205M1Q_R1_00201 PanJit Semiconductor PEC3202M1Q Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205S1Q_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Application: automotive industry
Semiconductor structure: bidirectional; double
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOT23
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. forward impulse current: 7A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
Produkt ist nicht verfügbar
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PEC4105C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
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PEC4105CS_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
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PG4007-AU_R2_100A1 PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
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PJ30072S6_R1_00301 PanJit Semiconductor PJ30072.pdf Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Produkt ist nicht verfügbar
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PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
794+0.09 EUR
1119+0.064 EUR
1471+0.049 EUR
1684+0.042 EUR
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PJA3400-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Case: SOT23-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Gate-source voltage: 12V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
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PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
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302+0.24 EUR
486+0.15 EUR
667+0.11 EUR
1000+0.093 EUR
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PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1783 Stücke:
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228+0.31 EUR
286+0.25 EUR
511+0.14 EUR
792+0.09 EUR
1000+0.077 EUR
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PJA3407E_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2364 Stücke:
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243+0.29 EUR
391+0.18 EUR
527+0.14 EUR
1000+0.12 EUR
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PJA3415A-AU_R1_000A1 PJA3415A-AU_R1_000A1 PanJit Semiconductor PJA3415A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 32998 Stücke:
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200+0.36 EUR
271+0.26 EUR
511+0.14 EUR
569+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
9000+0.099 EUR
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PJA3415AE-AU_R1_000A1 PanJit Semiconductor PJA3415AE-AU.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363
Mounting: SMD
Gate-source voltage: 10V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Produkt ist nicht verfügbar
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PJA3415AE_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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PJA3416AE_R1_00001 PJA3416AE_R1_00001 PanJit Semiconductor PJA3416AE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Gate charge: 8.6nC
On-state resistance: 34mΩ
Power dissipation: 1.25W
Drain current: 6.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 32A
auf Bestellung 3146 Stücke:
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193+0.37 EUR
304+0.24 EUR
491+0.15 EUR
695+0.1 EUR
1000+0.09 EUR
3000+0.087 EUR
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PJA3428_R1_00001 PanJit Semiconductor PJA3428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Produkt ist nicht verfügbar
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PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 500 Stücke:
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275+0.26 EUR
439+0.16 EUR
500+0.14 EUR
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PJB100N04S-AU_R2_002A1 PanJit Semiconductor PJB100N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJB100N04V-AU_R2_002A1 PanJit Semiconductor PJB100N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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PJB120N03S-AU_R2_002A1 PanJit Semiconductor PJB120N03S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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PJB120N04V-AU_R2_002A1 PanJit Semiconductor PJB120N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Mounting: SMD
Case: TO220AB
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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PJB140P04E7-AU_R2_002A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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PJC7400_R1_00001 PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 5345 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
667+0.11 EUR
705+0.1 EUR
782+0.092 EUR
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PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -6A
Drain current: -1.5A
Gate charge: 11nC
On-state resistance: 0.18Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 2075 Stücke:
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139+0.51 EUR
228+0.31 EUR
355+0.2 EUR
417+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
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PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4A
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 5980 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
481+0.15 EUR
575+0.12 EUR
642+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 455 Stücke
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PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 7465 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
685+0.1 EUR
736+0.097 EUR
782+0.092 EUR
1000+0.084 EUR
Mindestbestellmenge: 500 Stücke
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PJC7409_R1_00001 PanJit Semiconductor PJC7409.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJC7410_R1_00001 PanJit Semiconductor PJC7410.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PE3324C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4105C1ES_R1_00001 PE4105C1ES
PE4105C1ES_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1000+0.072 EUR
1429+0.05 EUR
2033+0.035 EUR
2381+0.03 EUR
2500+0.029 EUR
Mindestbestellmenge: 1000 Stücke
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PE4105C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
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PE4105C3C6_R1_00001 PE4105C3C6.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
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PE4136C2A-AU_R1_000A1 PE4136C2A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4136C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4205M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
Produkt ist nicht verfügbar
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PE4312C2A-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4312C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 8.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4312C2C-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4312CS_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PE4312ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PE4336ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
Produkt ist nicht verfügbar
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PE4715L1Q-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
Produkt ist nicht verfügbar
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PE4715L1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4724L1Q-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4724L1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4728L1Q-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE9180C1A-AU_R1_007A1 PE9180C1A-AU.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PEC11SD03M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Produkt ist nicht verfügbar
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PEC1305S1Q_R1_00001 PEC1305S1Q.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Case: DFN0603-2
Type of diode: TVS
Capacitance: 0.25pF
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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PEC1605M1Q-AU_R1_005A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Produkt ist nicht verfügbar
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PEC3205C2C_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PEC3205C2E_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205CS_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 8V
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205ES-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PEC3205M1Q_R1_00201 PEC3202M1Q
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205S1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
PEC3324C2A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Application: automotive industry
Semiconductor structure: bidirectional; double
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOT23
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. forward impulse current: 7A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
Produkt ist nicht verfügbar
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PEC4105C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PEC4105CS_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PG4007-AU_R2_100A1
PG4007-AU_R2_100A1
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
Produkt ist nicht verfügbar
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PJ30072S6_R1_00301 PJ30072.pdf
Hersteller: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Produkt ist nicht verfügbar
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PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
313+0.23 EUR
794+0.09 EUR
1119+0.064 EUR
1471+0.049 EUR
1684+0.042 EUR
Mindestbestellmenge: 313 Stücke
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PJA3400-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Case: SOT23-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Gate-source voltage: 12V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
auf Bestellung 2671 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
186+0.39 EUR
302+0.24 EUR
486+0.15 EUR
667+0.11 EUR
1000+0.093 EUR
Mindestbestellmenge: 186 Stücke
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PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1783 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
228+0.31 EUR
286+0.25 EUR
511+0.14 EUR
792+0.09 EUR
1000+0.077 EUR
Mindestbestellmenge: 228 Stücke
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PJA3407E_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
152+0.47 EUR
243+0.29 EUR
391+0.18 EUR
527+0.14 EUR
1000+0.12 EUR
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PJA3415A-AU_R1_000A1 PJA3415A-AU.pdf
PJA3415A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 32998 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
200+0.36 EUR
271+0.26 EUR
511+0.14 EUR
569+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
9000+0.099 EUR
Mindestbestellmenge: 200 Stücke
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PJA3415AE-AU_R1_000A1 PJA3415AE-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363
Mounting: SMD
Gate-source voltage: 10V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Produkt ist nicht verfügbar
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PJA3415AE_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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PJA3416AE_R1_00001 PJA3416AE.pdf
PJA3416AE_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Gate charge: 8.6nC
On-state resistance: 34mΩ
Power dissipation: 1.25W
Drain current: 6.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 32A
auf Bestellung 3146 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
193+0.37 EUR
304+0.24 EUR
491+0.15 EUR
695+0.1 EUR
1000+0.09 EUR
3000+0.087 EUR
Mindestbestellmenge: 193 Stücke
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PJA3428_R1_00001 PJA3428.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Produkt ist nicht verfügbar
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PJA3434_R1_00001 PJA3434.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJA3435_R1_00001 PJA3435.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
179+0.4 EUR
275+0.26 EUR
439+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 179 Stücke
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PJB100N04S-AU_R2_002A1 PJB100N04S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB100N04V-AU_R2_002A1 PJB100N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJB120N03S-AU_R2_002A1 PJB120N03S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04V-AU_R2_002A1 PJB120N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Mounting: SMD
Case: TO220AB
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJB140P04E7-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJC7400_R1_00001 PJC7400.pdf
PJC7400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 5345 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
556+0.13 EUR
667+0.11 EUR
705+0.1 EUR
782+0.092 EUR
Mindestbestellmenge: 556 Stücke
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PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -6A
Drain current: -1.5A
Gate charge: 11nC
On-state resistance: 0.18Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
139+0.51 EUR
228+0.31 EUR
355+0.2 EUR
417+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 139 Stücke
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PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4A
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 5980 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
455+0.16 EUR
481+0.15 EUR
575+0.12 EUR
642+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 455 Stücke
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PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 7465 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
500+0.14 EUR
685+0.1 EUR
736+0.097 EUR
782+0.092 EUR
1000+0.084 EUR
Mindestbestellmenge: 500 Stücke
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PJC7409_R1_00001 PJC7409.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410_R1_00001 PJC7410.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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