Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1232) > Seite 18 nach 21
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMB055N08NS1_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Case: TO220ABL Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 53nC On-state resistance: 7mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 120A Power dissipation: 138W Pulsed drain current: 480A Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Case: TO220ABL Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 53nC On-state resistance: 7mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 120A Power dissipation: 138W Pulsed drain current: 480A Kind of package: tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Case: TO220ABL Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 65.8nC On-state resistance: 7mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 111A Power dissipation: 136W Pulsed drain current: 360A Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Case: TO220ABL Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 65.8nC On-state resistance: 7mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 111A Power dissipation: 136W Pulsed drain current: 360A Kind of package: tube |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
PSMP075N15NS1_T0_00601 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PTGH4065S1_T0_00201 | PanJit Semiconductor | PTGH4065S1-T0 THT IGBT transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PZ1AL3V6B_R1_00001 | PanJit Semiconductor | PZ1AL3V6B-R1 SMD Zener diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PZS1112BES_R1_00001 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PZS516V2BAS_R1_00001 | PanJit Semiconductor |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
RB500V-40_R1_00001 | PanJit Semiconductor |
![]() |
auf Bestellung 7185 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
RB501V-40_R1_00001 | PanJit Semiconductor |
![]() |
auf Bestellung 5290 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
RB520S30_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Max. forward impulse current: 1A Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4976 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RB520S30_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Max. forward impulse current: 1A Leakage current: 1µA |
auf Bestellung 4976 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
RB520S40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Leakage current: 0.6mA Application: automotive industry Max. forward voltage: 0.6V Reverse recovery time: 10ns |
auf Bestellung 4925 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
RB520S40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Leakage current: 0.6mA Application: automotive industry Max. forward voltage: 0.6V Reverse recovery time: 10ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4925 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RB521S30_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Case: SOD523 Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Features of semiconductor devices: ultrafast switching Leakage current: 0.1mA Load current: 0.2A Max. forward voltage: 0.5V Max. forward impulse current: 1A Max. off-state voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6498 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RB521S30_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Case: SOD523 Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Features of semiconductor devices: ultrafast switching Leakage current: 0.1mA Load current: 0.2A Max. forward voltage: 0.5V Max. forward impulse current: 1A Max. off-state voltage: 30V |
auf Bestellung 6498 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
RB720M-30_R1_00001 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
RB751S40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 10µA Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
RB751S40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 10µA Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2985 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RB751S40_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.5A Kind of package: reel; tape Power dissipation: 0.2W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
RB751S40_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.5A Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
RB751V-40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.55V Leakage current: 22µA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.6A |
auf Bestellung 4899 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
RB751V-40X_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.37V Max. load current: 0.2A Leakage current: 0.5µA Kind of package: reel; tape |
auf Bestellung 4279 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
RB751V-40_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.34V Leakage current: 0.5µA Kind of package: reel; tape Power dissipation: 0.2W Max. forward impulse current: 0.6A |
auf Bestellung 3277 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
RB751V-40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.55V Leakage current: 22µA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4899 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RB751V-40_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.34V Leakage current: 0.5µA Kind of package: reel; tape Power dissipation: 0.2W Max. forward impulse current: 0.6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3277 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RB751V-40X_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.37V Max. load current: 0.2A Leakage current: 0.5µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4279 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
RDXK210_T0_00601 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RDXK410_T0_00601 | PanJit Semiconductor | RDXK410-T0 Flat single phase diode bridge rectif. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RDXK610_T0_00601 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RDXK810_T0_00601 | PanJit Semiconductor | RDXK810-T0 Flat single phase diode bridge rectif. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RPMS210_R2_00601 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RPMS310_R2_00601 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RPMS410_R2_00601 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RS1002FL_R1_00001 | PanJit Semiconductor |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
RS1004FL_R1_00001 | PanJit Semiconductor |
![]() |
auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
RS1006FL_R1_00001 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RS1008FL_R1_00001 | PanJit Semiconductor |
![]() |
auf Bestellung 2600 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
RS1010FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 1kV Semiconductor structure: single diode Case: SOD123F Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2054 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RS1010FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 1kV Semiconductor structure: single diode Case: SOD123F Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A |
auf Bestellung 2054 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
RS1D_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 0.15mA Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1790 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RS1D_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 0.15mA Reverse recovery time: 150ns |
auf Bestellung 1790 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
RS1J_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Kind of package: reel; tape Case: SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Leakage current: 0.15mA Load current: 1A Max. forward voltage: 1.3V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1586 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
RS1J_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Kind of package: reel; tape Case: SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Leakage current: 0.15mA Load current: 1A Max. forward voltage: 1.3V |
auf Bestellung 1586 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
RS1K_R1_00001 | PanJit Semiconductor |
![]() |
auf Bestellung 1690 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
S100W_R1_00001 | PanJit Semiconductor | S100W-R1 SMD Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S10KC-AU_R1_006A1 | PanJit Semiconductor | S10KC-AU-R1 SMD universal diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S10KC_R1_00601 | PanJit Semiconductor | S10KC-R1 SMD universal diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S10MC-AU_R1_006A1 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S10MC_R1_00601 | PanJit Semiconductor |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
S210L-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SMB Max. off-state voltage: 100V Max. forward voltage: 0.74V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 2mA Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
auf Bestellung 2875 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
S210L-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SMB Max. off-state voltage: 100V Max. forward voltage: 0.74V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 2mA Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2875 Stücke: Lieferzeit 7-14 Tag (e) |
|
PSMB055N08NS1_T0_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMN015N10NS2_R2_00201 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMN015N10NS2_R2_00201 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMN028N10NS2_R2_00201 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMN028N10NS2_R2_00201 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMP050N10NS2_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Case: TO220ABL
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Pulsed drain current: 480A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Case: TO220ABL
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Pulsed drain current: 480A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
30+ | 2.39 EUR |
50+ | 1.69 EUR |
PSMP050N10NS2_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Case: TO220ABL
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Pulsed drain current: 480A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Case: TO220ABL
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Pulsed drain current: 480A
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
30+ | 2.39 EUR |
PSMP055N08NS1_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Case: TO220ABL
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65.8nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 111A
Power dissipation: 136W
Pulsed drain current: 360A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Case: TO220ABL
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65.8nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 111A
Power dissipation: 136W
Pulsed drain current: 360A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
58+ | 1.24 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
2500+ | 0.87 EUR |
PSMP055N08NS1_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Case: TO220ABL
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65.8nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 111A
Power dissipation: 136W
Pulsed drain current: 360A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Case: TO220ABL
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65.8nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 111A
Power dissipation: 136W
Pulsed drain current: 360A
Kind of package: tube
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
58+ | 1.24 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
PSMP075N15NS1_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
PSMP075N15NS1-T0 THT N channel transistors
PSMP075N15NS1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMQC040N10NS2_R2_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMQC040N10NS2_R2_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTGH4065S1_T0_00201 |
Hersteller: PanJit Semiconductor
PTGH4065S1-T0 THT IGBT transistors
PTGH4065S1-T0 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PZ1AL3V6B_R1_00001 |
Hersteller: PanJit Semiconductor
PZ1AL3V6B-R1 SMD Zener diodes
PZ1AL3V6B-R1 SMD Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PZS1112BES_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
PZS1112BES-R1 SMD Zener diodes
PZS1112BES-R1 SMD Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PZS516V2BAS_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
PZS516V2BAS-R1 SMD Zener diodes
PZS516V2BAS-R1 SMD Zener diodes
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
682+ | 0.1 EUR |
1214+ | 0.059 EUR |
1283+ | 0.056 EUR |
9000+ | 0.054 EUR |
RB500V-40_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
RB500V-40-R1 SMD Schottky diodes
RB500V-40-R1 SMD Schottky diodes
auf Bestellung 7185 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1200+ | 0.06 EUR |
2674+ | 0.027 EUR |
2841+ | 0.025 EUR |
RB501V-40_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
RB501V-40-R1 SMD Schottky diodes
RB501V-40-R1 SMD Schottky diodes
auf Bestellung 5290 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1200+ | 0.06 EUR |
2763+ | 0.026 EUR |
2907+ | 0.025 EUR |
RB520S30_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4976 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
782+ | 0.092 EUR |
1180+ | 0.061 EUR |
1924+ | 0.037 EUR |
2041+ | 0.035 EUR |
5000+ | 0.034 EUR |
RB520S30_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Leakage current: 1µA
auf Bestellung 4976 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
782+ | 0.092 EUR |
1180+ | 0.061 EUR |
1924+ | 0.037 EUR |
2041+ | 0.035 EUR |
RB520S40-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.6mA
Application: automotive industry
Max. forward voltage: 0.6V
Reverse recovery time: 10ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.6mA
Application: automotive industry
Max. forward voltage: 0.6V
Reverse recovery time: 10ns
auf Bestellung 4925 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
658+ | 0.11 EUR |
944+ | 0.076 EUR |
1102+ | 0.065 EUR |
1737+ | 0.041 EUR |
1839+ | 0.039 EUR |
RB520S40-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.6mA
Application: automotive industry
Max. forward voltage: 0.6V
Reverse recovery time: 10ns
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.6mA
Application: automotive industry
Max. forward voltage: 0.6V
Reverse recovery time: 10ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4925 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
658+ | 0.11 EUR |
944+ | 0.076 EUR |
1102+ | 0.065 EUR |
1737+ | 0.041 EUR |
1839+ | 0.039 EUR |
5000+ | 0.037 EUR |
RB521S30_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6498 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
531+ | 0.13 EUR |
878+ | 0.082 EUR |
1507+ | 0.047 EUR |
2128+ | 0.034 EUR |
2273+ | 0.031 EUR |
RB521S30_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
auf Bestellung 6498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
531+ | 0.13 EUR |
878+ | 0.082 EUR |
1507+ | 0.047 EUR |
2128+ | 0.034 EUR |
2273+ | 0.031 EUR |
RB720M-30_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
RB720M-30-R1 SMD Schottky diodes
RB720M-30-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB751S40-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 10µA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 10µA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
537+ | 0.13 EUR |
794+ | 0.09 EUR |
1122+ | 0.064 EUR |
1656+ | 0.043 EUR |
1755+ | 0.041 EUR |
RB751S40-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 10µA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 10µA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2985 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
537+ | 0.13 EUR |
794+ | 0.09 EUR |
1122+ | 0.064 EUR |
1656+ | 0.043 EUR |
1755+ | 0.041 EUR |
5000+ | 0.04 EUR |
10000+ | 0.039 EUR |
RB751S40_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB751S40_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB751V-40-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
auf Bestellung 4899 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
582+ | 0.12 EUR |
926+ | 0.077 EUR |
1651+ | 0.043 EUR |
1749+ | 0.041 EUR |
2000+ | 0.04 EUR |
2500+ | 0.039 EUR |
RB751V-40X_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
auf Bestellung 4279 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
618+ | 0.12 EUR |
1029+ | 0.069 EUR |
1924+ | 0.037 EUR |
2033+ | 0.035 EUR |
2500+ | 0.034 EUR |
RB751V-40_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
auf Bestellung 3277 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
944+ | 0.076 EUR |
1330+ | 0.054 EUR |
1961+ | 0.036 EUR |
2075+ | 0.034 EUR |
RB751V-40-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4899 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
582+ | 0.12 EUR |
926+ | 0.077 EUR |
1651+ | 0.043 EUR |
1749+ | 0.041 EUR |
2000+ | 0.04 EUR |
2500+ | 0.039 EUR |
RB751V-40_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3277 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
944+ | 0.076 EUR |
1330+ | 0.054 EUR |
1961+ | 0.036 EUR |
2075+ | 0.034 EUR |
5000+ | 0.033 EUR |
RB751V-40X_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4279 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
618+ | 0.12 EUR |
1029+ | 0.069 EUR |
1924+ | 0.037 EUR |
2033+ | 0.035 EUR |
2500+ | 0.034 EUR |
RDXK210_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
RDXK210-T0 Flat single phase diode bridge rectif.
RDXK210-T0 Flat single phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RDXK410_T0_00601 |
Hersteller: PanJit Semiconductor
RDXK410-T0 Flat single phase diode bridge rectif.
RDXK410-T0 Flat single phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RDXK610_T0_00601 |
![]() |
Hersteller: PanJit Semiconductor
RDXK610-T0 Flat single phase diode bridge rectif.
RDXK610-T0 Flat single phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RDXK810_T0_00601 |
Hersteller: PanJit Semiconductor
RDXK810-T0 Flat single phase diode bridge rectif.
RDXK810-T0 Flat single phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RPMS210_R2_00601 |
![]() |
Hersteller: PanJit Semiconductor
RPMS210-R2 SMD/THT sing. phase diode bridge rectif.
RPMS210-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RPMS310_R2_00601 |
![]() |
Hersteller: PanJit Semiconductor
RPMS310-R2 SMD/THT sing. phase diode bridge rectif.
RPMS310-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RPMS410_R2_00601 |
![]() |
Hersteller: PanJit Semiconductor
RPMS410-R2 SMD/THT sing. phase diode bridge rectif.
RPMS410-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RS1002FL_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
RS1002FL-R1 SMD universal diodes
RS1002FL-R1 SMD universal diodes
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
271+ | 0.26 EUR |
1097+ | 0.065 EUR |
1161+ | 0.062 EUR |
9000+ | 0.059 EUR |
RS1004FL_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
RS1004FL-R1 SMD universal diodes
RS1004FL-R1 SMD universal diodes
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
271+ | 0.26 EUR |
1155+ | 0.062 EUR |
1223+ | 0.058 EUR |
9000+ | 0.056 EUR |
RS1006FL_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
RS1006FL-R1 SMD universal diodes
RS1006FL-R1 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RS1008FL_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
RS1008FL-R1 SMD universal diodes
RS1008FL-R1 SMD universal diodes
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
249+ | 0.29 EUR |
1064+ | 0.067 EUR |
1127+ | 0.063 EUR |
9000+ | 0.061 EUR |
RS1010FL_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2054 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
371+ | 0.19 EUR |
548+ | 0.13 EUR |
1062+ | 0.067 EUR |
1124+ | 0.064 EUR |
24000+ | 0.061 EUR |
RS1010FL_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
auf Bestellung 2054 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
371+ | 0.19 EUR |
548+ | 0.13 EUR |
1062+ | 0.067 EUR |
1124+ | 0.064 EUR |
RS1D_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1790 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
667+ | 0.11 EUR |
921+ | 0.078 EUR |
1051+ | 0.068 EUR |
1511+ | 0.047 EUR |
1598+ | 0.045 EUR |
RS1D_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
Reverse recovery time: 150ns
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
667+ | 0.11 EUR |
921+ | 0.078 EUR |
1051+ | 0.068 EUR |
1511+ | 0.047 EUR |
1598+ | 0.045 EUR |
RS1J_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1586 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
428+ | 0.17 EUR |
728+ | 0.098 EUR |
1433+ | 0.05 EUR |
1516+ | 0.047 EUR |
10800+ | 0.046 EUR |
RS1J_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
428+ | 0.17 EUR |
728+ | 0.098 EUR |
1433+ | 0.05 EUR |
1516+ | 0.047 EUR |
RS1K_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
RS1K-R1 SMD universal diodes
RS1K-R1 SMD universal diodes
auf Bestellung 1690 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
1334+ | 0.054 EUR |
1409+ | 0.051 EUR |
23400+ | 0.049 EUR |
S100W_R1_00001 |
Hersteller: PanJit Semiconductor
S100W-R1 SMD Schottky diodes
S100W-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S10KC-AU_R1_006A1 |
Hersteller: PanJit Semiconductor
S10KC-AU-R1 SMD universal diodes
S10KC-AU-R1 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S10KC_R1_00601 |
Hersteller: PanJit Semiconductor
S10KC-R1 SMD universal diodes
S10KC-R1 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S10MC-AU_R1_006A1 |
![]() |
Hersteller: PanJit Semiconductor
S10MC-AU-R1 SMD universal diodes
S10MC-AU-R1 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S10MC_R1_00601 |
![]() |
Hersteller: PanJit Semiconductor
S10MC-R1 SMD universal diodes
S10MC-R1 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S210L-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 100V
Max. forward voltage: 0.74V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 2mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 100V
Max. forward voltage: 0.74V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 2mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
569+ | 0.13 EUR |
625+ | 0.11 EUR |
758+ | 0.094 EUR |
807+ | 0.089 EUR |
S210L-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 100V
Max. forward voltage: 0.74V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 2mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 100V
Max. forward voltage: 0.74V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 2mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
569+ | 0.13 EUR |
625+ | 0.11 EUR |
758+ | 0.094 EUR |
807+ | 0.089 EUR |
9000+ | 0.086 EUR |