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PJA3430_R1_00001 PJA3430_R1_00001 PanJit Semiconductor PJA3430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2565 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
414+0.17 EUR
664+0.11 EUR
918+0.078 EUR
1058+0.068 EUR
3000+0.066 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJA3430_R1_00001 PJA3430_R1_00001 PanJit Semiconductor PJA3430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
auf Bestellung 2565 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
414+0.17 EUR
664+0.11 EUR
918+0.078 EUR
1058+0.068 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-AU_R1_000A1 PJA3432-AU_R1_000A1 PanJit Semiconductor PJA3432-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
432+0.17 EUR
687+0.1 EUR
946+0.076 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-AU_R1_000A1 PJA3432-AU_R1_000A1 PanJit Semiconductor PJA3432-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1770 Stücke:
Lieferzeit 7-14 Tag (e)
264+0.27 EUR
432+0.17 EUR
687+0.1 EUR
946+0.076 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433-AU_R1_000A1 PJA3433-AU_R1_000A1 PanJit Semiconductor PJA3433-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
432+0.17 EUR
685+0.1 EUR
848+0.084 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433-AU_R1_000A1 PJA3433-AU_R1_000A1 PanJit Semiconductor PJA3433-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1455 Stücke:
Lieferzeit 7-14 Tag (e)
264+0.27 EUR
432+0.17 EUR
685+0.1 EUR
848+0.084 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7014 Stücke:
Lieferzeit 7-14 Tag (e)
228+0.31 EUR
368+0.19 EUR
610+0.12 EUR
838+0.085 EUR
1000+0.076 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
auf Bestellung 7014 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
368+0.19 EUR
610+0.12 EUR
838+0.085 EUR
1000+0.076 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3770 Stücke:
Lieferzeit 7-14 Tag (e)
239+0.3 EUR
397+0.18 EUR
625+0.11 EUR
857+0.084 EUR
1000+0.073 EUR
3000+0.06 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
auf Bestellung 3770 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
397+0.18 EUR
625+0.11 EUR
857+0.084 EUR
1000+0.073 EUR
3000+0.06 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5960 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
323+0.22 EUR
500+0.14 EUR
666+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
6000+0.07 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
auf Bestellung 5960 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
323+0.22 EUR
500+0.14 EUR
666+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
auf Bestellung 2988 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
336+0.21 EUR
542+0.13 EUR
738+0.097 EUR
1000+0.086 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2988 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
336+0.21 EUR
542+0.13 EUR
738+0.097 EUR
1000+0.086 EUR
3000+0.072 EUR
6000+0.069 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJA3436_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
275+0.26 EUR
439+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
275+0.26 EUR
439+0.16 EUR
500+0.14 EUR
1000+0.1 EUR
3000+0.084 EUR
6000+0.074 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJA3438_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3439-AU_R1_000A1 PJA3439-AU_R1_000A1 PanJit Semiconductor PJA3439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3439-AU_R1_000A1 PJA3439-AU_R1_000A1 PanJit Semiconductor PJA3439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3439_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3440-AU_R1_000A1 PanJit Semiconductor PJA3440-AU.pdf PJA3440-AU-R1 SMD N channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
118+0.61 EUR
562+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 118
Im Einkaufswagen  Stück im Wert von  UAH
PJA3441-AU_R1_000A1 PanJit Semiconductor PJA3441-AU.pdf PJA3441-AU-R1 SMD P channel transistors
auf Bestellung 2725 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
PJA3441_R1_00501 PJA3441_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1863 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
253+0.28 EUR
332+0.22 EUR
472+0.15 EUR
506+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
PJA3441_R1_00501 PJA3441_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1863 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
253+0.28 EUR
332+0.22 EUR
472+0.15 EUR
506+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
PJA3460-AU_R1_000A1 PJA3460-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
257+0.28 EUR
633+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJA3460-AU_R1_000A1 PJA3460-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1013 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
257+0.28 EUR
633+0.11 EUR
6000+0.1 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJA3460_R1_00001 PJA3460_R1_00001 PanJit Semiconductor PJA3460.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3485 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
304+0.24 EUR
527+0.14 EUR
685+0.1 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJA3460_R1_00001 PJA3460_R1_00001 PanJit Semiconductor PJA3460.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3485 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
304+0.24 EUR
527+0.14 EUR
685+0.1 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJA3463_R1_00001 PanJit Semiconductor PJA3463.pdf PJA3463-R1 SMD P channel transistors
auf Bestellung 845 Stücke:
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127+0.56 EUR
527+0.14 EUR
556+0.13 EUR
Mindestbestellmenge: 127
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PJA3471_R1_00501 PanJit Semiconductor PJA3471-R1 SMD P channel transistors
auf Bestellung 12065 Stücke:
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145+0.5 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 145
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PJB120N03S-AU_R2_002A1 PanJit Semiconductor PJB120N03S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04S-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04V-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Kind of package: reel; tape
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB240N04S7-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB240N04V7-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJC138K-AU_R1_000A1 PanJit Semiconductor PJC138K-AU.pdf PJC138K-AU-R1 SMD N channel transistors
auf Bestellung 2059 Stücke:
Lieferzeit 7-14 Tag (e)
182+0.39 EUR
1183+0.06 EUR
1250+0.057 EUR
75000+0.055 EUR
Mindestbestellmenge: 182
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PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf PJC7400-R1 SMD N channel transistors
auf Bestellung 5455 Stücke:
Lieferzeit 7-14 Tag (e)
161+0.44 EUR
596+0.12 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 161
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PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf PJC7401-R1 SMD P channel transistors
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
123+0.58 EUR
205+0.34 EUR
453+0.16 EUR
15000+0.1 EUR
Mindestbestellmenge: 123
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PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5990 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
248+0.29 EUR
388+0.18 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.096 EUR
6000+0.086 EUR
Mindestbestellmenge: 152
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PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
auf Bestellung 5990 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
248+0.29 EUR
388+0.18 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.096 EUR
Mindestbestellmenge: 152
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PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7545 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
288+0.25 EUR
491+0.15 EUR
650+0.11 EUR
1000+0.1 EUR
3000+0.089 EUR
6000+0.084 EUR
Mindestbestellmenge: 193
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PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 7545 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
288+0.25 EUR
491+0.15 EUR
650+0.11 EUR
1000+0.1 EUR
3000+0.089 EUR
6000+0.084 EUR
Mindestbestellmenge: 193
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PJC7428_R1_00001 PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
463+0.15 EUR
734+0.098 EUR
872+0.082 EUR
989+0.072 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
463+0.15 EUR
734+0.098 EUR
872+0.082 EUR
989+0.072 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
451+0.16 EUR
729+0.098 EUR
1000+0.072 EUR
1147+0.062 EUR
Mindestbestellmenge: 278
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PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
451+0.16 EUR
729+0.098 EUR
1000+0.072 EUR
1147+0.062 EUR
3000+0.051 EUR
6000+0.048 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7476_R1_00001 PJC7476_R1_00001 PanJit Semiconductor PJC7476.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
204+0.35 EUR
575+0.12 EUR
642+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
PJC7476_R1_00001 PJC7476_R1_00001 PanJit Semiconductor PJC7476.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
204+0.35 EUR
575+0.12 EUR
642+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
PJD10P10A_L2_00601 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD13N10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD16P06A_L2_00001 PanJit Semiconductor PJD16P06A.pdf PJD16P06A-L2 SMD P channel transistors
auf Bestellung 10928 Stücke:
Lieferzeit 7-14 Tag (e)
82+0.88 EUR
196+0.37 EUR
207+0.35 EUR
1000+0.33 EUR
Mindestbestellmenge: 82
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PJD18N20_L2_00001 PJD18N20_L2_00001 PanJit Semiconductor PJx18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N03_L2_00001 PJD25N03_L2_00001 PanJit Semiconductor PJD25N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4000 Stücke:
Lieferzeit 7-14 Tag (e)
114+0.63 EUR
174+0.41 EUR
254+0.28 EUR
295+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 114
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PJD25N03_L2_00001 PJD25N03_L2_00001 PanJit Semiconductor PJD25N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
174+0.41 EUR
254+0.28 EUR
295+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A-AU_L2_000A1 PanJit Semiconductor PJD25N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1537 Stücke:
Lieferzeit 7-14 Tag (e)
107+0.67 EUR
157+0.46 EUR
215+0.33 EUR
500+0.28 EUR
1000+0.26 EUR
3000+0.23 EUR
6000+0.22 EUR
Mindestbestellmenge: 107
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PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1537 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
157+0.46 EUR
215+0.33 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 107
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PJD25N10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3430_R1_00001 PJA3430.pdf
PJA3430_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2565 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
250+0.29 EUR
414+0.17 EUR
664+0.11 EUR
918+0.078 EUR
1058+0.068 EUR
3000+0.066 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJA3430_R1_00001 PJA3430.pdf
PJA3430_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
auf Bestellung 2565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
414+0.17 EUR
664+0.11 EUR
918+0.078 EUR
1058+0.068 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-AU_R1_000A1 PJA3432-AU.pdf
PJA3432-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
432+0.17 EUR
687+0.1 EUR
946+0.076 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-AU_R1_000A1 PJA3432-AU.pdf
PJA3432-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1770 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
264+0.27 EUR
432+0.17 EUR
687+0.1 EUR
946+0.076 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433-AU_R1_000A1 PJA3433-AU.pdf
PJA3433-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
432+0.17 EUR
685+0.1 EUR
848+0.084 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433-AU_R1_000A1 PJA3433-AU.pdf
PJA3433-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1455 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
264+0.27 EUR
432+0.17 EUR
685+0.1 EUR
848+0.084 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7014 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
228+0.31 EUR
368+0.19 EUR
610+0.12 EUR
838+0.085 EUR
1000+0.076 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
auf Bestellung 7014 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
368+0.19 EUR
610+0.12 EUR
838+0.085 EUR
1000+0.076 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3770 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
239+0.3 EUR
397+0.18 EUR
625+0.11 EUR
857+0.084 EUR
1000+0.073 EUR
3000+0.06 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
auf Bestellung 3770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
397+0.18 EUR
625+0.11 EUR
857+0.084 EUR
1000+0.073 EUR
3000+0.06 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5960 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
193+0.37 EUR
323+0.22 EUR
500+0.14 EUR
666+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
6000+0.07 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
auf Bestellung 5960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
323+0.22 EUR
500+0.14 EUR
666+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
auf Bestellung 2988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
336+0.21 EUR
542+0.13 EUR
738+0.097 EUR
1000+0.086 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2988 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
200+0.36 EUR
336+0.21 EUR
542+0.13 EUR
738+0.097 EUR
1000+0.086 EUR
3000+0.072 EUR
6000+0.069 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJA3436_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
275+0.26 EUR
439+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.4 EUR
275+0.26 EUR
439+0.16 EUR
500+0.14 EUR
1000+0.1 EUR
3000+0.084 EUR
6000+0.074 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJA3438_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3439-AU_R1_000A1 PJA3439-AU.pdf
PJA3439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3439-AU_R1_000A1 PJA3439-AU.pdf
PJA3439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3439_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3440-AU_R1_000A1 PJA3440-AU.pdf
Hersteller: PanJit Semiconductor
PJA3440-AU-R1 SMD N channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
118+0.61 EUR
562+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 118
Im Einkaufswagen  Stück im Wert von  UAH
PJA3441-AU_R1_000A1 PJA3441-AU.pdf
Hersteller: PanJit Semiconductor
PJA3441-AU-R1 SMD P channel transistors
auf Bestellung 2725 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
120+0.6 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
PJA3441_R1_00501
PJA3441_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1863 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
167+0.43 EUR
253+0.28 EUR
332+0.22 EUR
472+0.15 EUR
506+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
PJA3441_R1_00501
PJA3441_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1863 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
253+0.28 EUR
332+0.22 EUR
472+0.15 EUR
506+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
PJA3460-AU_R1_000A1
PJA3460-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
257+0.28 EUR
633+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJA3460-AU_R1_000A1
PJA3460-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1013 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
186+0.39 EUR
257+0.28 EUR
633+0.11 EUR
6000+0.1 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJA3460_R1_00001 PJA3460.pdf
PJA3460_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3485 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
193+0.37 EUR
304+0.24 EUR
527+0.14 EUR
685+0.1 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJA3460_R1_00001 PJA3460.pdf
PJA3460_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
304+0.24 EUR
527+0.14 EUR
685+0.1 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJA3463_R1_00001 PJA3463.pdf
Hersteller: PanJit Semiconductor
PJA3463-R1 SMD P channel transistors
auf Bestellung 845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
127+0.56 EUR
527+0.14 EUR
556+0.13 EUR
Mindestbestellmenge: 127
Im Einkaufswagen  Stück im Wert von  UAH
PJA3471_R1_00501
Hersteller: PanJit Semiconductor
PJA3471-R1 SMD P channel transistors
auf Bestellung 12065 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
145+0.5 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 145
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N03S-AU_R2_002A1 PJB120N03S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04S-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Kind of package: reel; tape
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB240N04S7-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJB240N04V7-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC138K-AU_R1_000A1 PJC138K-AU.pdf
Hersteller: PanJit Semiconductor
PJC138K-AU-R1 SMD N channel transistors
auf Bestellung 2059 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
182+0.39 EUR
1183+0.06 EUR
1250+0.057 EUR
75000+0.055 EUR
Mindestbestellmenge: 182
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R1_00001 PJC7400.pdf
Hersteller: PanJit Semiconductor
PJC7400-R1 SMD N channel transistors
auf Bestellung 5455 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
161+0.44 EUR
596+0.12 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 161
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001 PJC7401.pdf
Hersteller: PanJit Semiconductor
PJC7401-R1 SMD P channel transistors
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
123+0.58 EUR
205+0.34 EUR
453+0.16 EUR
15000+0.1 EUR
Mindestbestellmenge: 123
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
152+0.47 EUR
248+0.29 EUR
388+0.18 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.096 EUR
6000+0.086 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
auf Bestellung 5990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
248+0.29 EUR
388+0.18 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.096 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7545 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
193+0.37 EUR
288+0.25 EUR
491+0.15 EUR
650+0.11 EUR
1000+0.1 EUR
3000+0.089 EUR
6000+0.084 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 7545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
288+0.25 EUR
491+0.15 EUR
650+0.11 EUR
1000+0.1 EUR
3000+0.089 EUR
6000+0.084 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428.pdf
PJC7428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
278+0.26 EUR
463+0.15 EUR
734+0.098 EUR
872+0.082 EUR
989+0.072 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428.pdf
PJC7428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
463+0.15 EUR
734+0.098 EUR
872+0.082 EUR
989+0.072 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
451+0.16 EUR
729+0.098 EUR
1000+0.072 EUR
1147+0.062 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
278+0.26 EUR
451+0.16 EUR
729+0.098 EUR
1000+0.072 EUR
1147+0.062 EUR
3000+0.051 EUR
6000+0.048 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7476_R1_00001 PJC7476.pdf
PJC7476_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
152+0.47 EUR
204+0.35 EUR
575+0.12 EUR
642+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
PJC7476_R1_00001 PJC7476.pdf
PJC7476_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
204+0.35 EUR
575+0.12 EUR
642+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
PJD10P10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD13N10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD16P06A_L2_00001 PJD16P06A.pdf
Hersteller: PanJit Semiconductor
PJD16P06A-L2 SMD P channel transistors
auf Bestellung 10928 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
82+0.88 EUR
196+0.37 EUR
207+0.35 EUR
1000+0.33 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
PJD18N20_L2_00001 PJx18N20.pdf
PJD18N20_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N03_L2_00001 PJD25N03.pdf
PJD25N03_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
114+0.63 EUR
174+0.41 EUR
254+0.28 EUR
295+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N03_L2_00001 PJD25N03.pdf
PJD25N03_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
174+0.41 EUR
254+0.28 EUR
295+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A-AU_L2_000A1 PJD25N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1537 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
107+0.67 EUR
157+0.46 EUR
215+0.33 EUR
500+0.28 EUR
1000+0.26 EUR
3000+0.23 EUR
6000+0.22 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
157+0.46 EUR
215+0.33 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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