Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1246) > Seite 18 nach 21
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| PJQ5427_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8 Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 100A |
Produkt ist nicht verfügbar |
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| PJQ5435E-AU_R2_006A1 | PanJit Semiconductor |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: 47A Drain-source voltage: 30V Gate-source voltage: 25V Application: automotive industry Case: DFN5060-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5435E_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: 47A Drain-source voltage: 30V Gate-source voltage: 25V Case: DFN5060-8 |
Produkt ist nicht verfügbar |
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| PJQ5458A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8 Application: automotive industry Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 16A Gate-source voltage: 20V Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
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| PJQ5468A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8 Case: DFN5060-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Polarisation: unipolar Drain current: 25A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5468A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8 Case: DFN5060-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Polarisation: unipolar Drain current: 25A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5518C-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8 Mounting: SMD Polarisation: unipolar Drain current: 318A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060X-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5518S6C-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 178A; DFN5060X-8 Mounting: SMD Polarisation: unipolar Drain current: 178A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060X-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5524-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8 Mounting: SMD Polarisation: unipolar Drain current: 93A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5524_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8 Mounting: SMD Polarisation: unipolar Drain current: 93A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5524S6-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 77A; DFN5060-8 Mounting: SMD Polarisation: unipolar Drain current: 77A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5526-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 73A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5526_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 73A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5528_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5544S6-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 101A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJQ5544S6V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Application: automotive industry Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PJQ5546V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Pulsed drain current: 316A Power dissipation: 65W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJQ5548V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Pulsed drain current: 180A Power dissipation: 36W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJQ5968A-AU_R2_002A1 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 36A; DFN5060-8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PJS6421_S1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.4A Pulsed drain current: -29.6A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±10V On-state resistance: 40mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PJS6815_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT363 Drain current: 0.36A Gate-source voltage: 20V Drain-source voltage: 50V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJSD03LCFN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Case: DFN1006-2 Mounting: SMD Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Capacitance: 25pF Leakage current: 2.5µA Max. forward impulse current: 6A Number of channels: 1 Breakdown voltage: 5.4V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PJSD03TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.12kW Max. off-state voltage: 3.3V Breakdown voltage: 4V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Application: automotive industry Capacitance: 0.2nF |
auf Bestellung 3473 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PJSD03TS_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1 Type of diode: TVS Breakdown voltage: 4V Max. forward impulse current: 5A Peak pulse power dissipation: 0.12kW Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 3.3V Leakage current: 0.2mA Number of channels: 1 Capacitance: 0.2nF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJSD05CFN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Max. off-state voltage: 5V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Capacitance: 70pF Number of channels: 1 Breakdown voltage: 6V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PJSD05CTM_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.1kW Max. off-state voltage: 5V Max. forward impulse current: 1A Semiconductor structure: bidirectional Case: SOD923 Mounting: SMD Leakage current: 1µA Capacitance: 30pF Number of channels: 1 Breakdown voltage: 5.78V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD05CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 5µA Capacitance: 0.2nF Number of channels: 1 Breakdown voltage: 6.37V Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD05CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 5µA Capacitance: 0.2nF Number of channels: 1 Breakdown voltage: 7.04V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD05TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape Mounting: SMD Peak pulse power dissipation: 0.12kW Version: ESD Application: automotive industry Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 0.11nF Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 5A |
auf Bestellung 1291 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJSD07TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 7V Semiconductor structure: unidirectional Leakage current: 0.15µA Case: SOD523 Capacitance: 85pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 7.5V Max. forward impulse current: 8.8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD07TS_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1 Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: unidirectional Capacitance: 85pF Leakage current: 0.15µA Max. forward impulse current: 8.8A Breakdown voltage: 7.5V Peak pulse power dissipation: 0.12kW Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD08TS-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1 Mounting: SMD Application: automotive industry Max. off-state voltage: 8V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 70pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 8.5V Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD08W_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1 Case: SOD323 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.15nF Leakage current: 10µA Number of channels: 1 Max. forward impulse current: 1A Max. off-state voltage: 8V Breakdown voltage: 10V Peak pulse power dissipation: 0.35kW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD12_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.3V; 17A; 0.4kW; unidirectional; SOD123; Ch: 1 Case: SOD123 Mounting: SMD Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 0.18nF Type of diode: TVS Number of channels: 1 Breakdown voltage: 13.3V Max. forward impulse current: 17A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD12TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 12V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 60pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 13.3V Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD15CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 18.48V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15V Leakage current: 1µA Capacitance: 75pF Max. forward impulse current: 10A Application: automotive industry Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD15CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 18.48V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15V Leakage current: 1µA Capacitance: 75pF Max. forward impulse current: 10A Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD15TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 15V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 50pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 16.6V Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD24TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 24V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 25pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 26.7V Max. forward impulse current: 3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD24TS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 5µA Kind of package: reel; tape Breakdown voltage: 26.7V Peak pulse power dissipation: 0.12kW Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJT7002H_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N/P-MOSFET Gate-source voltage: 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJT7002KDW_R1_00501 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N/P-MOSFET Gate-source voltage: 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJT7812_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Case: SOT363 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJUSB05-4_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5 Case: SOT23-6L Mounting: SMD Type of diode: TVS Number of channels: 5 Breakdown voltage: 6.37V Peak pulse power dissipation: 0.15kW Max. off-state voltage: 5V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 8.5pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJUSB208_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Case: SOT23-6L Mounting: SMD Type of diode: TVS Number of channels: 4 Breakdown voltage: 85V Max. off-state voltage: 70V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 1pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJUSB208_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Case: SOT23-6L Mounting: SMD Type of diode: TVS Number of channels: 4 Breakdown voltage: 85V Max. off-state voltage: 70V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 1pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJW3P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJW3P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJW5P06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Application: automotive industry Gate charge: 17nC On-state resistance: 85mΩ Power dissipation: 1W |
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| PJW5P06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJW7N06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
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PJW7N06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| PM1008LL_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8 Max. forward impulse current: 190A Max. forward voltage: 0.95V Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 10A Case: M8 Type of bridge rectifier: single-phase |
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| PM1010_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8 Max. forward impulse current: 190A Max. forward voltage: 0.95V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 10A Case: M8 Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
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| PM810_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8 Case: M8 Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 8A Max. forward impulse current: 170A Max. off-state voltage: 1kV Electrical mounting: SMT |
Produkt ist nicht verfügbar |
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| PMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4 Case: M4 Max. forward voltage: 1.05V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 2A Type of bridge rectifier: single-phase Max. forward impulse current: 70A |
Produkt ist nicht verfügbar |
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| PMS310_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 3A Max. forward impulse current: 110A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
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PMS410_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4 Kind of package: reel; tape Features of semiconductor devices: glass passivated Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 4A Max. forward impulse current: 120A Max. off-state voltage: 1kV |
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| PJQ5427_R2_006A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 100A
Produkt ist nicht verfügbar
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| PJQ5435E-AU_R2_006A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
Produkt ist nicht verfügbar
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| PJQ5435E_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
Produkt ist nicht verfügbar
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| PJQ5458A-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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| PJQ5468A-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJQ5468A_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJQ5518C-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 318A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 318A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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| PJQ5518S6C-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 178A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 178A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 178A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 178A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Produkt ist nicht verfügbar
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| PJQ5524-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 93A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 93A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Produkt ist nicht verfügbar
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| PJQ5524_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 93A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 93A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Produkt ist nicht verfügbar
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| PJQ5524S6-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 77A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 77A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 77A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 77A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Produkt ist nicht verfügbar
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| PJQ5526-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
Produkt ist nicht verfügbar
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| PJQ5526_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Produkt ist nicht verfügbar
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| PJQ5528_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJQ5544S6-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 101A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 101A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJQ5544S6V-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Produkt ist nicht verfügbar
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| PJQ5546V-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJQ5548V-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 36W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 36W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJQ5968A-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 36A; DFN5060-8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 36A; DFN5060-8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJS6421_S1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
| PJS6815_S1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJSD03LCFN2_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
Produkt ist nicht verfügbar
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| PJSD03TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 0.2nF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 0.2nF
auf Bestellung 3473 Stücke:
Lieferzeit 14-21 Tag (e)
| PJSD03TS_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD05CFN2_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Capacitance: 70pF
Number of channels: 1
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Capacitance: 70pF
Number of channels: 1
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| PJSD05CTM_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 5V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Capacitance: 30pF
Number of channels: 1
Breakdown voltage: 5.78V
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 5V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Capacitance: 30pF
Number of channels: 1
Breakdown voltage: 5.78V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| PJSD05CW-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 5µA
Capacitance: 0.2nF
Number of channels: 1
Breakdown voltage: 6.37V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 5µA
Capacitance: 0.2nF
Number of channels: 1
Breakdown voltage: 6.37V
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD05CW_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 5µA
Capacitance: 0.2nF
Number of channels: 1
Breakdown voltage: 7.04V
Category: Protection diodes - arrays
Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 5µA
Capacitance: 0.2nF
Number of channels: 1
Breakdown voltage: 7.04V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD05TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 0.11nF
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 0.11nF
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
auf Bestellung 1291 Stücke:
Lieferzeit 14-21 Tag (e)
| PJSD07TS-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Leakage current: 0.15µA
Case: SOD523
Capacitance: 85pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Leakage current: 0.15µA
Case: SOD523
Capacitance: 85pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD07TS_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Capacitance: 85pF
Leakage current: 0.15µA
Max. forward impulse current: 8.8A
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.12kW
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Capacitance: 85pF
Leakage current: 0.15µA
Max. forward impulse current: 8.8A
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.12kW
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD08TS-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 8V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 70pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 8.5V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 8V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 70pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 8.5V
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD08W_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.15nF
Leakage current: 10µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 8V
Breakdown voltage: 10V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.15nF
Leakage current: 10µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 8V
Breakdown voltage: 10V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD12_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 17A; 0.4kW; unidirectional; SOD123; Ch: 1
Case: SOD123
Mounting: SMD
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 0.18nF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 13.3V
Max. forward impulse current: 17A
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 17A; 0.4kW; unidirectional; SOD123; Ch: 1
Case: SOD123
Mounting: SMD
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 0.18nF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 13.3V
Max. forward impulse current: 17A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJSD12TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 60pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 13.3V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 60pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 13.3V
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| PJSD15CW-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Max. forward impulse current: 10A
Application: automotive industry
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Max. forward impulse current: 10A
Application: automotive industry
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD15CW_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Max. forward impulse current: 10A
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Max. forward impulse current: 10A
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD15TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 50pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 16.6V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 50pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 16.6V
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD24TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 25pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 26.7V
Max. forward impulse current: 3A
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 25pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 26.7V
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| PJSD24TS_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJT7002H_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJT7002KDW_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJT7812_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJUSB05-4_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 5
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 8.5pF
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 5
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 8.5pF
Produkt ist nicht verfügbar
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| PJUSB208_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 4
Breakdown voltage: 85V
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1pF
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 4
Breakdown voltage: 85V
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1pF
Produkt ist nicht verfügbar
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| PJUSB208_S1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 4
Breakdown voltage: 85V
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1pF
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Case: SOT23-6L
Mounting: SMD
Type of diode: TVS
Number of channels: 4
Breakdown voltage: 85V
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 1pF
Produkt ist nicht verfügbar
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| PJW3P06A-AU_R2_007A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJW3P06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJW4N06A-AU_R2_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJW4N06A_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJW5P06A-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
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| PJW5P06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJW7N06A-AU_R2_007A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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| PJW7N06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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| PM1008LL_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
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| PM1010_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
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| PM810_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
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| PMS210_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
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| PMS310_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
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| PMS410_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
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