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P6SMB30CA-AU_R1_000A1 P6SMB30CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
265+0.27 EUR
350+0.2 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB30CA-AU_R1_000A1 P6SMB30CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
265+0.27 EUR
350+0.2 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)
94+0.76 EUR
284+0.26 EUR
294+0.24 EUR
20000+0.14 EUR
Mindestbestellmenge: 94
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ10CA_R1_00001 P6SMBJ10CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
274+0.26 EUR
379+0.19 EUR
575+0.12 EUR
2400+0.11 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ10CA_R1_00001 P6SMBJ10CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
274+0.26 EUR
379+0.19 EUR
575+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ15CA_R1_00001 P6SMBJ15CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 565 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
281+0.25 EUR
385+0.19 EUR
565+0.13 EUR
2400+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ15CA_R1_00001 P6SMBJ15CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
281+0.25 EUR
385+0.19 EUR
565+0.13 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ26CA-AU_R2_000A1 P6SMBJ26CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28A_R1_00001 P6SMBJ28A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
345+0.21 EUR
472+0.15 EUR
715+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28A_R1_00001 P6SMBJ28A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
345+0.21 EUR
472+0.15 EUR
715+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28CA-AU_R1_000A1 P6SMBJ28CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
334+0.21 EUR
371+0.19 EUR
455+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28CA-AU_R1_000A1 P6SMBJ28CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
334+0.21 EUR
371+0.19 EUR
455+0.16 EUR
481+0.15 EUR
2400+0.14 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ30A_R1_00001 P6SMBJ30A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 365 Stücke:
Lieferzeit 7-14 Tag (e)
228+0.31 EUR
338+0.21 EUR
365+0.2 EUR
458+0.16 EUR
4000+0.093 EUR
5600+0.092 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ30A_R1_00001 P6SMBJ30A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
338+0.21 EUR
365+0.2 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33A_R1_00001 P6SMBJ33A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 850 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
252+0.28 EUR
358+0.2 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33A_R1_00001 P6SMBJ33A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
252+0.28 EUR
358+0.2 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
222+0.32 EUR
400+0.18 EUR
424+0.17 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 968 Stücke:
Lieferzeit 7-14 Tag (e)
139+0.51 EUR
222+0.32 EUR
400+0.18 EUR
424+0.17 EUR
1600+0.16 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA_R2_00001 P6SMBJ33CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
244+0.29 EUR
365+0.2 EUR
375+0.19 EUR
2400+0.11 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
244+0.29 EUR
365+0.2 EUR
375+0.19 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ40CA_R2_00001 PanJit Semiconductor P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
auf Bestellung 5987 Stücke:
Lieferzeit 7-14 Tag (e)
172+0.42 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 172
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ48A_R2_00001 P6SMBJ48A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0A_R1_00001 P6SMBJ5.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
254+0.28 EUR
371+0.19 EUR
685+0.1 EUR
725+0.099 EUR
5600+0.097 EUR
8000+0.094 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0A_R1_00001 P6SMBJ5.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
254+0.28 EUR
371+0.19 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0CA_R1_00001 P6SMBJ5.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 595 Stücke:
Lieferzeit 7-14 Tag (e)
122+0.59 EUR
201+0.36 EUR
304+0.24 EUR
569+0.13 EUR
595+0.12 EUR
20000+0.11 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0CA_R1_00001 P6SMBJ5.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
201+0.36 EUR
304+0.24 EUR
569+0.13 EUR
595+0.12 EUR
Mindestbestellmenge: 122
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P6SMBJ6.0A_R1_00001 P6SMBJ6.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 520 Stücke:
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179+0.4 EUR
268+0.27 EUR
382+0.19 EUR
520+0.14 EUR
Mindestbestellmenge: 179
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P6SMBJ6.0A_R1_00001 P6SMBJ6.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
268+0.27 EUR
382+0.19 EUR
520+0.14 EUR
Mindestbestellmenge: 179
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P6SMBJ7.5CA_R1_00001 P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
236+0.3 EUR
348+0.21 EUR
430+0.17 EUR
2400+0.12 EUR
4000+0.11 EUR
Mindestbestellmenge: 162
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P6SMBJ7.5CA_R1_00001 P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
236+0.3 EUR
348+0.21 EUR
430+0.17 EUR
Mindestbestellmenge: 162
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PBHV8110DA-AU_R1_000A1 PBHV8110DA-AU_R1_000A1 PanJit Semiconductor PBHV8110DA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 3123 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
348+0.21 EUR
591+0.12 EUR
901+0.079 EUR
953+0.075 EUR
3000+0.072 EUR
Mindestbestellmenge: 228
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PBHV8110DA-AU_R1_000A1 PBHV8110DA-AU_R1_000A1 PanJit Semiconductor PBHV8110DA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3123 Stücke:
Lieferzeit 7-14 Tag (e)
228+0.31 EUR
348+0.21 EUR
591+0.12 EUR
901+0.079 EUR
953+0.075 EUR
3000+0.072 EUR
Mindestbestellmenge: 228
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PCDB10120G1_R2_00001 PanJit Semiconductor PCDB10120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 0.64kA
Kind of package: reel; tape
Power dissipation: 164.8W
Produkt ist nicht verfügbar
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PCDB1065G1_R2_00001 PanJit Semiconductor PCDB1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PCDD1065G1_L2_00001 PCDD1065G1_L2_00001 PanJit Semiconductor PCDD1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252AA; SiC; SMD; 650V; 10A; reel,tape
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 44A
Power dissipation: 99.3W
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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PCDD1065GB_L2_00601 PanJit Semiconductor PCDD1065GB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252AA; SiC; SMD; 650V; 10A; reel,tape
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.1mA
Max. forward voltage: 1.4V
Load current: 10A
Max. load current: 36A
Power dissipation: 90W
Max. forward impulse current: 664A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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PCDE1065G1_R2_00001 PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 44A
Power dissipation: 102.7W
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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PCDF0465G1_T0_00601 PanJit Semiconductor PCDF0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Produkt ist nicht verfügbar
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PCDF0665G1_T0_00601 PanJit Semiconductor PCDF0665G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Produkt ist nicht verfügbar
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PCDF0865G1_T0_00601 PanJit Semiconductor PCDF0865G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Produkt ist nicht verfügbar
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PCDF1065G1_T0_00601 PanJit Semiconductor PCDF1065G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 70µA
Max. forward voltage: 1.8V
Max. load current: 36A
Power dissipation: 104.2W
Max. forward impulse current: 560A
Produkt ist nicht verfügbar
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PCDH20120CCGB_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.1mA
Max. forward voltage: 1.9V
Load current: 10A x2
Max. load current: 72A
Power dissipation: 209W
Max. forward impulse current: 0.92kA
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO247-3
Produkt ist nicht verfügbar
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PCDH2065CCG1_T0_00601 PanJit Semiconductor PCDH2065CCG1.pdf PCDH2065CCG1-T0 THT Schottky diodes
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.72 EUR
15+4.92 EUR
16+4.65 EUR
600+4.49 EUR
Mindestbestellmenge: 11
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PCDP1065G1_T0_00001 PCDP1065G1_T0_00001 PanJit Semiconductor PCDP1065G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; Ir: 70uA
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 44A
Power dissipation: 83.3W
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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PCDP15120G1_T0_00001 PCDP15120G1_T0_00001 PanJit Semiconductor PCDP15120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Produkt ist nicht verfügbar
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PCDP20120G1_T0_00001 PCDP20120G1_T0_00001 PanJit Semiconductor PCDP20120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 152A
Max. forward impulse current: 960A
Leakage current: 180µA
Power dissipation: 267.9W
Kind of package: tube
Produkt ist nicht verfügbar
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PDZ5.1B-AU_R1_000A1 PDZ5.1B-AU_R1_000A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD8E4CDCC040D6&compId=PDZ4.7B-AU_SERIES.pdf?ci_sign=f49d54adb8b36981585cb1ef7eced5a24e35c3cf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 0.75µA
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
610+0.12 EUR
981+0.073 EUR
1656+0.043 EUR
1755+0.041 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
PDZ5.1B-AU_R1_000A1 PDZ5.1B-AU_R1_000A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD8E4CDCC040D6&compId=PDZ4.7B-AU_SERIES.pdf?ci_sign=f49d54adb8b36981585cb1ef7eced5a24e35c3cf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 0.75µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4990 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
610+0.12 EUR
981+0.073 EUR
1656+0.043 EUR
1755+0.041 EUR
5000+0.04 EUR
10000+0.039 EUR
Mindestbestellmenge: 455
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PE1805C4A6_R1_00001 PanJit Semiconductor PE1805C4A6_R1_00001.pdf PE1805C4A6-R1 Protection diodes - arrays
auf Bestellung 8480 Stücke:
Lieferzeit 7-14 Tag (e)
293+0.24 EUR
823+0.087 EUR
870+0.082 EUR
3000+0.079 EUR
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PE1805C4C6_R1_00001 PanJit Semiconductor PE1805C4C6.pdf PE1805C4C6-R1 Protection diodes - arrays
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
298+0.24 EUR
983+0.073 EUR
1040+0.069 EUR
15000+0.066 EUR
Mindestbestellmenge: 298
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PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES-R1 Protection diodes - arrays
auf Bestellung 4200 Stücke:
Lieferzeit 7-14 Tag (e)
895+0.08 EUR
2858+0.025 EUR
3013+0.024 EUR
Mindestbestellmenge: 895
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PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Produkt ist nicht verfügbar
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PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU PEC3324C2A-AU-R1 Protection diodes - arrays
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
146+0.49 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 146
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PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB9A51177B422E0DC&compId=PEC33712C2A.pdf?ci_sign=d5c142623a59ad2cd2fcd739fe19f3bb41956a1f Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Semiconductor structure: asymmetric; bidirectional
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.51 EUR
100+0.72 EUR
170+0.41 EUR
466+0.16 EUR
1000+0.089 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB9A51177B422E0DC&compId=PEC33712C2A.pdf?ci_sign=d5c142623a59ad2cd2fcd739fe19f3bb41956a1f Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Semiconductor structure: asymmetric; bidirectional
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
auf Bestellung 13 Stücke:
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13+5.51 EUR
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PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
477+0.15 EUR
755+0.095 EUR
2084+0.034 EUR
2203+0.032 EUR
Mindestbestellmenge: 295
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PJA138K-AU_R2_000A1 PJA138K-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
477+0.15 EUR
755+0.095 EUR
2084+0.034 EUR
2203+0.032 EUR
15000+0.031 EUR
Mindestbestellmenge: 295
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P6SMB30CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
P6SMB30CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
265+0.27 EUR
350+0.2 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 167
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P6SMB30CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
P6SMB30CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
167+0.43 EUR
265+0.27 EUR
350+0.2 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB36CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
94+0.76 EUR
284+0.26 EUR
294+0.24 EUR
20000+0.14 EUR
Mindestbestellmenge: 94
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P6SMBJ10CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ10CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.4 EUR
274+0.26 EUR
379+0.19 EUR
575+0.12 EUR
2400+0.11 EUR
Mindestbestellmenge: 179
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P6SMBJ10CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ10CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
274+0.26 EUR
379+0.19 EUR
575+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ15CA_R1_00001 P6SMB_SERIES.pdf
P6SMBJ15CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 565 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
186+0.39 EUR
281+0.25 EUR
385+0.19 EUR
565+0.13 EUR
2400+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ15CA_R1_00001 P6SMB_SERIES.pdf
P6SMBJ15CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
281+0.25 EUR
385+0.19 EUR
565+0.13 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ26CA-AU_R2_000A1
P6SMBJ26CA-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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P6SMBJ28A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ28A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
209+0.34 EUR
345+0.21 EUR
472+0.15 EUR
715+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ28A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
345+0.21 EUR
472+0.15 EUR
715+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ28CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
334+0.21 EUR
371+0.19 EUR
455+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ28CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
278+0.26 EUR
334+0.21 EUR
371+0.19 EUR
455+0.16 EUR
481+0.15 EUR
2400+0.14 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ30A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 365 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
228+0.31 EUR
338+0.21 EUR
365+0.2 EUR
458+0.16 EUR
4000+0.093 EUR
5600+0.092 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ30A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
338+0.21 EUR
365+0.2 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ33A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 850 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
173+0.41 EUR
252+0.28 EUR
358+0.2 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ33A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
252+0.28 EUR
358+0.2 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ33CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
222+0.32 EUR
400+0.18 EUR
424+0.17 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ33CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 968 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
139+0.51 EUR
222+0.32 EUR
400+0.18 EUR
424+0.17 EUR
1600+0.16 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA_R2_00001
P6SMBJ33CA_R2_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
152+0.47 EUR
244+0.29 EUR
365+0.2 EUR
375+0.19 EUR
2400+0.11 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
244+0.29 EUR
365+0.2 EUR
375+0.19 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ40CA_R2_00001
Hersteller: PanJit Semiconductor
P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
auf Bestellung 5987 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
172+0.42 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 172
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ48A_R2_00001
P6SMBJ48A_R2_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
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P6SMBJ5.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
173+0.41 EUR
254+0.28 EUR
371+0.19 EUR
685+0.1 EUR
725+0.099 EUR
5600+0.097 EUR
8000+0.094 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
254+0.28 EUR
371+0.19 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 595 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
122+0.59 EUR
201+0.36 EUR
304+0.24 EUR
569+0.13 EUR
595+0.12 EUR
20000+0.11 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
201+0.36 EUR
304+0.24 EUR
569+0.13 EUR
595+0.12 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ6.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.0A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 520 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.4 EUR
268+0.27 EUR
382+0.19 EUR
520+0.14 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ6.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.0A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
268+0.27 EUR
382+0.19 EUR
520+0.14 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
162+0.44 EUR
236+0.3 EUR
348+0.21 EUR
430+0.17 EUR
2400+0.12 EUR
4000+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
236+0.3 EUR
348+0.21 EUR
430+0.17 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8110DA-AU_R1_000A1 PBHV8110DA.pdf
PBHV8110DA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 3123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
348+0.21 EUR
591+0.12 EUR
901+0.079 EUR
953+0.075 EUR
3000+0.072 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8110DA-AU_R1_000A1 PBHV8110DA.pdf
PBHV8110DA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
228+0.31 EUR
348+0.21 EUR
591+0.12 EUR
901+0.079 EUR
953+0.075 EUR
3000+0.072 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PCDB10120G1_R2_00001 PCDB10120G1.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 0.64kA
Kind of package: reel; tape
Power dissipation: 164.8W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB1065G1_R2_00001 PCDB1065G1.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD1065G1_L2_00001 PCDD1065G1.pdf
PCDD1065G1_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252AA; SiC; SMD; 650V; 10A; reel,tape
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 44A
Power dissipation: 99.3W
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD1065GB_L2_00601 PCDD1065GB.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252AA; SiC; SMD; 650V; 10A; reel,tape
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.1mA
Max. forward voltage: 1.4V
Load current: 10A
Max. load current: 36A
Power dissipation: 90W
Max. forward impulse current: 664A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDE1065G1_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 44A
Power dissipation: 102.7W
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDF0465G1_T0_00601 PCDF0465G1.pdf
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDF0665G1_T0_00601 PCDF0665G1.pdf
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDF0865G1_T0_00601 PCDF0865G1.pdf
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDF1065G1_T0_00601 PCDF1065G1.pdf
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 70µA
Max. forward voltage: 1.8V
Max. load current: 36A
Power dissipation: 104.2W
Max. forward impulse current: 560A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDH20120CCGB_T0_00601
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.1mA
Max. forward voltage: 1.9V
Load current: 10A x2
Max. load current: 72A
Power dissipation: 209W
Max. forward impulse current: 0.92kA
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDH2065CCG1_T0_00601 PCDH2065CCG1.pdf
Hersteller: PanJit Semiconductor
PCDH2065CCG1-T0 THT Schottky diodes
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.72 EUR
15+4.92 EUR
16+4.65 EUR
600+4.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PCDP1065G1_T0_00001 PCDP1065G1.pdf
PCDP1065G1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; Ir: 70uA
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 44A
Power dissipation: 83.3W
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDP15120G1_T0_00001 PCDP15120G1.pdf
PCDP15120G1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDP20120G1_T0_00001 PCDP20120G1.pdf
PCDP20120G1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 152A
Max. forward impulse current: 960A
Leakage current: 180µA
Power dissipation: 267.9W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDZ5.1B-AU_R1_000A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD8E4CDCC040D6&compId=PDZ4.7B-AU_SERIES.pdf?ci_sign=f49d54adb8b36981585cb1ef7eced5a24e35c3cf
PDZ5.1B-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 0.75µA
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
610+0.12 EUR
981+0.073 EUR
1656+0.043 EUR
1755+0.041 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
PDZ5.1B-AU_R1_000A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD8E4CDCC040D6&compId=PDZ4.7B-AU_SERIES.pdf?ci_sign=f49d54adb8b36981585cb1ef7eced5a24e35c3cf
PDZ5.1B-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 0.75µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
610+0.12 EUR
981+0.073 EUR
1656+0.043 EUR
1755+0.041 EUR
5000+0.04 EUR
10000+0.039 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
PE1805C4A6_R1_00001 PE1805C4A6_R1_00001.pdf
Hersteller: PanJit Semiconductor
PE1805C4A6-R1 Protection diodes - arrays
auf Bestellung 8480 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
293+0.24 EUR
823+0.087 EUR
870+0.082 EUR
3000+0.079 EUR
Mindestbestellmenge: 293
Im Einkaufswagen  Stück im Wert von  UAH
PE1805C4C6_R1_00001 PE1805C4C6.pdf
Hersteller: PanJit Semiconductor
PE1805C4C6-R1 Protection diodes - arrays
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
298+0.24 EUR
983+0.073 EUR
1040+0.069 EUR
15000+0.066 EUR
Mindestbestellmenge: 298
Im Einkaufswagen  Stück im Wert von  UAH
PE4105C1ES_R1_00001
Hersteller: PanJit Semiconductor
PE4105C1ES-R1 Protection diodes - arrays
auf Bestellung 4200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
895+0.08 EUR
2858+0.025 EUR
3013+0.024 EUR
Mindestbestellmenge: 895
Im Einkaufswagen  Stück im Wert von  UAH
PEC11SD03M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
Hersteller: PanJit Semiconductor
PEC3324C2A-AU-R1 Protection diodes - arrays
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
146+0.49 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 146
Im Einkaufswagen  Stück im Wert von  UAH
PEC33712C2A_R1_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB9A51177B422E0DC&compId=PEC33712C2A.pdf?ci_sign=d5c142623a59ad2cd2fcd739fe19f3bb41956a1f
PEC33712C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Semiconductor structure: asymmetric; bidirectional
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.51 EUR
100+0.72 EUR
170+0.41 EUR
466+0.16 EUR
1000+0.089 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PEC33712C2A_R1_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB9A51177B422E0DC&compId=PEC33712C2A.pdf?ci_sign=d5c142623a59ad2cd2fcd739fe19f3bb41956a1f
PEC33712C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Semiconductor structure: asymmetric; bidirectional
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
477+0.15 EUR
755+0.095 EUR
2084+0.034 EUR
2203+0.032 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R2_000A1
PJA138K-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
295+0.24 EUR
477+0.15 EUR
755+0.095 EUR
2084+0.034 EUR
2203+0.032 EUR
15000+0.031 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
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