Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1467) > Seite 17 nach 25
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.4V Max. load current: 48A Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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PCDP05120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V Case: TO220AC Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 2V Load current: 5A Max. load current: 40A Power dissipation: 129.3W Max. forward impulse current: 520A Max. off-state voltage: 1.2kV Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 120A Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
PDZ5.1B-AU-R1 SMD Zener diodes |
auf Bestellung 4990 Stücke: Lieferzeit 7-14 Tag (e) |
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| PE1605C4A6-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE1605C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE1605C4A6_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8480 Stücke: Lieferzeit 7-14 Tag (e) |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
auf Bestellung 8480 Stücke: Lieferzeit 14-21 Tag (e) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2970 Stücke: Lieferzeit 7-14 Tag (e) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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| PE4105C1ES_R1_00001 | PanJit Semiconductor | PE4105C1ES-R1 Protection diodes - arrays |
auf Bestellung 4200 Stücke: Lieferzeit 7-14 Tag (e) |
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| PE4309C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Application: automotive industry Mounting: SMD Case: SOT23 Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4312C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4312C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4312C2C-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT323 Type of diode: TVS Mounting: SMD Case: SOT323 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4312CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Type of diode: TVS Mounting: SMD Case: SOD323 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4312ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD523 Type of diode: TVS Mounting: SMD Case: SOD523 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4712L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Application: automotive industry Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4712L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4720L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry Case: DFN1610-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4720L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Case: DFN1610-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4724L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry Case: DFN1610-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4724L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Case: DFN1610-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4728L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Type of diode: TVS Mounting: SMD Case: DFN1610-2 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4736L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PE4736L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD Capacitance: 0.6pF Mounting: SMD Type of diode: TVS Kind of package: reel; tape Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| PEC3107M1AQ_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Case: DFN1006-2 Mounting: SMD Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PEC3107S1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; DFN0603-2 Case: DFN0603-2 Mounting: SMD Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PEC3205CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Type of diode: TVS Mounting: SMD Case: SOD323 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
PEC3324C2A-AU-R1 Protection diodes - arrays |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23 Version: ESD Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of diode: TVS array Capacitance: 35pF Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 7...12V Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Semiconductor structure: asymmetric; bidirectional Application: universal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23 Version: ESD Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of diode: TVS array Capacitance: 35pF Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 7...12V Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Semiconductor structure: asymmetric; bidirectional Application: universal |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJ30072S6_R1_00301 | PanJit Semiconductor |
Category: Voltage regulators - DC/DC circuitsDescription: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC Operating temperature: -40...85°C Type of converter: DC/DC Output current: 0.75A Input voltage: 750mV DC...5.5V DC Case: SOT23-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PJ4L40W6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| PJA138K-AU_R1_000A1 | PanJit Semiconductor |
PJA138K-AU-R1 SMD N channel transistors |
auf Bestellung 2740 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Case: SOT23 Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Drain current: 4.9A Gate-source voltage: ±12V Pulsed drain current: 19.6A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2675 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Case: SOT23 Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Drain current: 4.9A Gate-source voltage: ±12V Pulsed drain current: 19.6A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
auf Bestellung 2675 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3401-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1793 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1793 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3401_R1_005A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Case: SOT23-6 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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PJA3402_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.4A Pulsed drain current: 17.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 92mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9015 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3402_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.4A Pulsed drain current: 17.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 92mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 9015 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3403_R1_00001 | PanJit Semiconductor |
PJA3403-R1 SMD P channel transistors |
auf Bestellung 2334 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3404_R1_00501 | PanJit Semiconductor | PJA3404-R1 SMD N channel transistors |
auf Bestellung 3904 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3405-AU_R1_000A1 | PanJit Semiconductor |
PJA3405-AU-R1 SMD P channel transistors |
auf Bestellung 2864 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3406_R1_00001 | PanJit Semiconductor |
PJA3406-R1 SMD N channel transistors |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2915 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2915 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3409_R1_00001 | PanJit Semiconductor |
PJA3409-R1 SMD P channel transistors |
auf Bestellung 2380 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3411-AU_R1_000A1 | PanJit Semiconductor |
PJA3411-AU-R1 SMD P channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3412-AU_R1_000A1 | PanJit Semiconductor |
PJA3412-AU-R1 SMD N channel transistors |
auf Bestellung 2136 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3412_R1_00501 | PanJit Semiconductor | PJA3412-R1 SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3413_R1_00001 | PanJit Semiconductor |
PJA3413-R1 SMD P channel transistors |
auf Bestellung 2370 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -4.5A Gate charge: 10nC On-state resistance: 88mΩ Power dissipation: 1.25W Gate-source voltage: ±12V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PCDH2065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.71 EUR |
| 14+ | 5.15 EUR |
| 30+ | 4.55 EUR |
| PCDH2065CCGB_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDH2065CCGC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDP05120G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 2V
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 2V
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDP15120G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZ5.1B-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PDZ5.1B-AU-R1 SMD Zener diodes
PDZ5.1B-AU-R1 SMD Zener diodes
auf Bestellung 4990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 405+ | 0.18 EUR |
| 1651+ | 0.043 EUR |
| 1749+ | 0.041 EUR |
| 15000+ | 0.039 EUR |
| PE1605C4A6-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE1605C4A6_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE1605C4A6_S1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE1805C4A6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8480 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 463+ | 0.15 EUR |
| 678+ | 0.11 EUR |
| 793+ | 0.09 EUR |
| 893+ | 0.08 EUR |
| 1000+ | 0.079 EUR |
| PE1805C4A6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
auf Bestellung 8480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 463+ | 0.15 EUR |
| 678+ | 0.11 EUR |
| 793+ | 0.09 EUR |
| 893+ | 0.08 EUR |
| 1000+ | 0.079 EUR |
| PE1805C4C6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 544+ | 0.13 EUR |
| 777+ | 0.092 EUR |
| 949+ | 0.075 EUR |
| 1021+ | 0.07 EUR |
| 3000+ | 0.066 EUR |
| PE1805C4C6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 544+ | 0.13 EUR |
| 777+ | 0.092 EUR |
| 949+ | 0.075 EUR |
| 1021+ | 0.07 EUR |
| PE4105C1ES_R1_00001 |
Hersteller: PanJit Semiconductor
PE4105C1ES-R1 Protection diodes - arrays
PE4105C1ES-R1 Protection diodes - arrays
auf Bestellung 4200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 895+ | 0.08 EUR |
| 2858+ | 0.025 EUR |
| 3013+ | 0.024 EUR |
| PE4309C2A-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Mounting: SMD
Case: SOT23
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Mounting: SMD
Case: SOT23
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4312C2A-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4312C2A_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4312C2C-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4312CS_R1_00701 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4312ES_R1_00701 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4712L1Q-AU_R1_002A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4712L1Q_R1_00201 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4720L1Q-AU_R1_002A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4720L1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4724L1Q-AU_R1_002A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4724L1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4728L1Q-AU_R1_002A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4736L1Q-AU_R1_002A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4736L1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC1605M1Q_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC3107M1AQ_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC3107S1Q_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN0603-2
Case: DFN0603-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN0603-2
Case: DFN0603-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC3205CS_R1_00701 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC3324C2A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PEC3324C2A-AU-R1 Protection diodes - arrays
PEC3324C2A-AU-R1 Protection diodes - arrays
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 146+ | 0.49 EUR |
| 562+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| PEC33712C2A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.14 EUR |
| PEC33712C2A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| PJ30072S6_R1_00301 |
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Hersteller: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Operating temperature: -40...85°C
Type of converter: DC/DC
Output current: 0.75A
Input voltage: 750mV DC...5.5V DC
Case: SOT23-6
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Operating temperature: -40...85°C
Type of converter: DC/DC
Output current: 0.75A
Input voltage: 750mV DC...5.5V DC
Case: SOT23-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJ4L40W6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJA138K-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA138K-AU-R1 SMD N channel transistors
PJA138K-AU-R1 SMD N channel transistors
auf Bestellung 2740 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 2075+ | 0.034 EUR |
| 2193+ | 0.033 EUR |
| 21000+ | 0.031 EUR |
| PJA3400_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2675 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 241+ | 0.3 EUR |
| 379+ | 0.19 EUR |
| 517+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.098 EUR |
| 6000+ | 0.087 EUR |
| PJA3400_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 241+ | 0.3 EUR |
| 379+ | 0.19 EUR |
| 517+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| PJA3401-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJA3401A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1793 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 353+ | 0.2 EUR |
| 558+ | 0.13 EUR |
| 755+ | 0.095 EUR |
| 1000+ | 0.084 EUR |
| 3000+ | 0.076 EUR |
| PJA3401A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1793 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 353+ | 0.2 EUR |
| 558+ | 0.13 EUR |
| 755+ | 0.095 EUR |
| 1000+ | 0.084 EUR |
| PJA3401_R1_005A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJA3402_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9015 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 242+ | 0.3 EUR |
| 536+ | 0.13 EUR |
| 585+ | 0.12 EUR |
| 668+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| 3000+ | 0.072 EUR |
| PJA3402_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 9015 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 242+ | 0.3 EUR |
| 536+ | 0.13 EUR |
| 585+ | 0.12 EUR |
| 668+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| 3000+ | 0.072 EUR |
| 9000+ | 0.064 EUR |
| PJA3403_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3403-R1 SMD P channel transistors
PJA3403-R1 SMD P channel transistors
auf Bestellung 2334 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 211+ | 0.34 EUR |
| 1080+ | 0.066 EUR |
| 1145+ | 0.062 EUR |
| PJA3404_R1_00501 |
Hersteller: PanJit Semiconductor
PJA3404-R1 SMD N channel transistors
PJA3404-R1 SMD N channel transistors
auf Bestellung 3904 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 944+ | 0.076 EUR |
| 1000+ | 0.072 EUR |
| PJA3405-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA3405-AU-R1 SMD P channel transistors
PJA3405-AU-R1 SMD P channel transistors
auf Bestellung 2864 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 834+ | 0.086 EUR |
| 878+ | 0.082 EUR |
| PJA3406_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3406-R1 SMD N channel transistors
PJA3406-R1 SMD N channel transistors
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 207+ | 0.35 EUR |
| 933+ | 0.077 EUR |
| 987+ | 0.073 EUR |
| 9000+ | 0.072 EUR |
| PJA3407_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2915 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 243+ | 0.29 EUR |
| 391+ | 0.18 EUR |
| 527+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.1 EUR |
| 6000+ | 0.094 EUR |
| PJA3407_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2915 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 243+ | 0.29 EUR |
| 391+ | 0.18 EUR |
| 527+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| PJA3409_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3409-R1 SMD P channel transistors
PJA3409-R1 SMD P channel transistors
auf Bestellung 2380 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 855+ | 0.084 EUR |
| 903+ | 0.079 EUR |
| PJA3411-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA3411-AU-R1 SMD P channel transistors
PJA3411-AU-R1 SMD P channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 227+ | 0.32 EUR |
| 949+ | 0.075 EUR |
| 1005+ | 0.071 EUR |
| PJA3412-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA3412-AU-R1 SMD N channel transistors
PJA3412-AU-R1 SMD N channel transistors
auf Bestellung 2136 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 177+ | 0.41 EUR |
| 873+ | 0.082 EUR |
| 923+ | 0.078 EUR |
| 9000+ | 0.075 EUR |
| PJA3412_R1_00501 |
Hersteller: PanJit Semiconductor
PJA3412-R1 SMD N channel transistors
PJA3412-R1 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 1323+ | 0.054 EUR |
| 1401+ | 0.051 EUR |
| PJA3413_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3413-R1 SMD P channel transistors
PJA3413-R1 SMD P channel transistors
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 155+ | 0.46 EUR |
| 1356+ | 0.053 EUR |
| 1433+ | 0.05 EUR |
| PJA3415A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -4.5A
Gate charge: 10nC
On-state resistance: 88mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: reel; tape
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -4.5A
Gate charge: 10nC
On-state resistance: 88mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH






