Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1212) > Seite 17 nach 21

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 8 10 12 13 14 15 16 17 18 19 20 21  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PJS6839_S1_00001 PJS6839_S1_00001 PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.3A
Power dissipation: 0.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -1A
auf Bestellung 2949 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
400+0.18 EUR
497+0.14 EUR
900+0.08 EUR
951+0.075 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.2mA
Capacitance: 200pF
Application: automotive industry
auf Bestellung 4714 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
511+0.14 EUR
682+0.1 EUR
930+0.077 EUR
983+0.073 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.2mA
Capacitance: 200pF
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4714 Stücke:
Lieferzeit 7-14 Tag (e)
385+0.19 EUR
511+0.14 EUR
682+0.1 EUR
930+0.077 EUR
983+0.073 EUR
5000+0.07 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 5µA
Capacitance: 110pF
Application: automotive industry
auf Bestellung 4807 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
417+0.17 EUR
556+0.13 EUR
758+0.094 EUR
807+0.089 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 5µA
Capacitance: 110pF
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4807 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
417+0.17 EUR
556+0.13 EUR
758+0.094 EUR
807+0.089 EUR
5000+0.086 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf PJSD05TS-R1 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD12CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf PJSD12CW-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD12TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf PJSD12TS-R1 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD24TS_R1_00001 PJSD24TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Version: ESD
Peak pulse power dissipation: 120W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD24TS_R1_00001 PJSD24TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Version: ESD
Peak pulse power dissipation: 120W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD36W-AU_R1_000A1 PanJit Semiconductor PJSD03W-AU_SERIES.pdf PJSD36W-AU-R1 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD36W_R1_00001 PanJit Semiconductor PJSD36W-R1 Unidirectional TVS SMD diodes
auf Bestellung 9985 Stücke:
Lieferzeit 7-14 Tag (e)
160+0.45 EUR
806+0.089 EUR
852+0.084 EUR
Mindestbestellmenge: 160
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1 PJT138K-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.236W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
290+0.25 EUR
479+0.15 EUR
869+0.082 EUR
893+0.08 EUR
918+0.078 EUR
1000+0.075 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1 PJT138K-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.236W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
290+0.25 EUR
479+0.15 EUR
869+0.082 EUR
893+0.08 EUR
918+0.078 EUR
1000+0.075 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Gate charge: 1.6/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2695 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
174+0.41 EUR
304+0.24 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_S1_00001 PanJit Semiconductor PJT7600-S1 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Gate charge: 1.6/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2695 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
174+0.41 EUR
304+0.24 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf PJT7603-R1 Multi channel transistors
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
869+0.082 EUR
918+0.078 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJT7605-AU_R1_000A1 PanJit Semiconductor PJT7605-AU-R1 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5983 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
247+0.29 EUR
421+0.17 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 4A
auf Bestellung 5983 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
247+0.29 EUR
421+0.17 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
129+0.56 EUR
209+0.34 EUR
319+0.22 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2.8A
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
209+0.34 EUR
319+0.22 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PJT7828_R1_00001 PanJit Semiconductor PJT7828-R1 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7654 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
240+0.3 EUR
407+0.18 EUR
618+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
auf Bestellung 7654 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
240+0.3 EUR
407+0.18 EUR
618+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P10A_R2_00001 PanJit Semiconductor PJW3P10A.pdf PJW3P10A-R2 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU_R2_000A1 PanJit Semiconductor PJW4N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU_R2_000A1 PanJit Semiconductor PJW4N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 42500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A_R2_00001 PanJit Semiconductor PJW4N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 42500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A_R2_00001 PanJit Semiconductor PJW4N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A-AU_R2_000A1 PanJit Semiconductor PJW4P06A-AU.pdf PJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 2683 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
307+0.23 EUR
325+0.22 EUR
2500+0.21 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A_R2_00001 PanJit Semiconductor PJW4P06A.pdf PJW4P06A-R2 SMD P channel transistors
auf Bestellung 1254 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
400+0.18 EUR
424+0.17 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A-AU_R2_000A1 PanJit Semiconductor PJW5P06A-AU-R2 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001 PJX138K_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3955 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
388+0.18 EUR
600+0.12 EUR
817+0.088 EUR
864+0.083 EUR
2000+0.08 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001 PJX138K_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
auf Bestellung 3955 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
388+0.18 EUR
600+0.12 EUR
817+0.088 EUR
864+0.083 EUR
2000+0.08 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJX138L_R1_00002 PanJit Semiconductor PJX138L-R1 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1967 Stücke:
Lieferzeit 7-14 Tag (e)
264+0.27 EUR
410+0.17 EUR
575+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1967 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
410+0.17 EUR
575+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PMS410_R2_00601 PanJit Semiconductor PMS410.pdf PMS410-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSDH60120S1B_T0_00601 PanJit Semiconductor PSDH60120S1B-T0 THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_R2_00601 PanJit Semiconductor PSMB050N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_R2_00601 PanJit Semiconductor PSMB050N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 480A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 480A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_R2_00601 PanJit Semiconductor PSMB055N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_R2_00601 PanJit Semiconductor PSMB055N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN028N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf PSMN028N10NS2-R2 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP050N10NS2_T0_00601 PSMP050N10NS2_T0_00601 PanJit Semiconductor PSMP050N10NS2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.32 EUR
30+2.39 EUR
50+1.7 EUR
100+1.69 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMP050N10NS2_T0_00601 PSMP050N10NS2_T0_00601 PanJit Semiconductor PSMP050N10NS2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 480A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.32 EUR
30+2.39 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMP055N08NS1_T0_00601 PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.12 EUR
61+1.19 EUR
74+0.97 EUR
79+0.92 EUR
1000+0.9 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
PSMP055N08NS1_T0_00601 PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.12 EUR
61+1.19 EUR
74+0.97 EUR
79+0.92 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
PSMP075N15NS1_T0_00601 PanJit Semiconductor PSMP075N15NS1.pdf PSMP075N15NS1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PTGH4065S1_T0_00201 PanJit Semiconductor PTGH4065S1-T0 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.3A
Power dissipation: 0.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -1A
auf Bestellung 2949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
400+0.18 EUR
497+0.14 EUR
900+0.08 EUR
951+0.075 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.2mA
Capacitance: 200pF
Application: automotive industry
auf Bestellung 4714 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
511+0.14 EUR
682+0.1 EUR
930+0.077 EUR
983+0.073 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.2mA
Capacitance: 200pF
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4714 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
385+0.19 EUR
511+0.14 EUR
682+0.1 EUR
930+0.077 EUR
983+0.073 EUR
5000+0.07 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 5µA
Capacitance: 110pF
Application: automotive industry
auf Bestellung 4807 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
417+0.17 EUR
556+0.13 EUR
758+0.094 EUR
807+0.089 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 5µA
Capacitance: 110pF
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4807 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
295+0.24 EUR
417+0.17 EUR
556+0.13 EUR
758+0.094 EUR
807+0.089 EUR
5000+0.086 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS_R1_00001 PJSD03TS_SERIES.pdf
Hersteller: PanJit Semiconductor
PJSD05TS-R1 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD12CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
PJSD12CW-AU-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD12TS_R1_00001 PJSD03TS_SERIES.pdf
Hersteller: PanJit Semiconductor
PJSD12TS-R1 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD24TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD24TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Version: ESD
Peak pulse power dissipation: 120W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD24TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD24TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Version: ESD
Peak pulse power dissipation: 120W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD36W-AU_R1_000A1 PJSD03W-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
PJSD36W-AU-R1 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD36W_R1_00001
Hersteller: PanJit Semiconductor
PJSD36W-R1 Unidirectional TVS SMD diodes
auf Bestellung 9985 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
160+0.45 EUR
806+0.089 EUR
852+0.084 EUR
Mindestbestellmenge: 160
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1
PJT138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.236W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
290+0.25 EUR
479+0.15 EUR
869+0.082 EUR
893+0.08 EUR
918+0.078 EUR
1000+0.075 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1
PJT138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.236W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
250+0.29 EUR
290+0.25 EUR
479+0.15 EUR
869+0.082 EUR
893+0.08 EUR
918+0.078 EUR
1000+0.075 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Gate charge: 1.6/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2695 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
120+0.6 EUR
174+0.41 EUR
304+0.24 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_S1_00001
Hersteller: PanJit Semiconductor
PJT7600-S1 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Gate charge: 1.6/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2695 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
174+0.41 EUR
304+0.24 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
PJT7603_R1_00001 PJT7603.pdf
Hersteller: PanJit Semiconductor
PJT7603-R1 Multi channel transistors
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
200+0.36 EUR
869+0.082 EUR
918+0.078 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJT7605-AU_R1_000A1
Hersteller: PanJit Semiconductor
PJT7605-AU-R1 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5983 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
162+0.44 EUR
247+0.29 EUR
421+0.17 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 4A
auf Bestellung 5983 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
247+0.29 EUR
421+0.17 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801.pdf
PJT7801_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
129+0.56 EUR
209+0.34 EUR
319+0.22 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801.pdf
PJT7801_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2.8A
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
209+0.34 EUR
319+0.22 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PJT7828_R1_00001
Hersteller: PanJit Semiconductor
PJT7828-R1 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7654 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
162+0.44 EUR
240+0.3 EUR
407+0.18 EUR
618+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
auf Bestellung 7654 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
240+0.3 EUR
407+0.18 EUR
618+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P10A_R2_00001 PJW3P10A.pdf
Hersteller: PanJit Semiconductor
PJW3P10A-R2 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU.pdf
PJW4N06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU.pdf
PJW4N06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 42500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A.pdf
PJW4N06A_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 42500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A.pdf
PJW4N06A_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A-AU_R2_000A1 PJW4P06A-AU.pdf
Hersteller: PanJit Semiconductor
PJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 2683 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
70+1.03 EUR
307+0.23 EUR
325+0.22 EUR
2500+0.21 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A_R2_00001 PJW4P06A.pdf
Hersteller: PanJit Semiconductor
PJW4P06A-R2 SMD P channel transistors
auf Bestellung 1254 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
132+0.54 EUR
400+0.18 EUR
424+0.17 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
PJW5P06A-AU-R2 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001
PJX138K_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3955 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
250+0.29 EUR
388+0.18 EUR
600+0.12 EUR
817+0.088 EUR
864+0.083 EUR
2000+0.08 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001
PJX138K_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
auf Bestellung 3955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
388+0.18 EUR
600+0.12 EUR
817+0.088 EUR
864+0.083 EUR
2000+0.08 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
PJX138L_R1_00002
Hersteller: PanJit Semiconductor
PJX138L-R1 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1967 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
264+0.27 EUR
410+0.17 EUR
575+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
410+0.17 EUR
575+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PMS410_R2_00601 PMS410.pdf
Hersteller: PanJit Semiconductor
PMS410-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSDH60120S1B_T0_00601
Hersteller: PanJit Semiconductor
PSDH60120S1B-T0 THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_R2_00601 PSMB050N10NS2.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_R2_00601 PSMB050N10NS2.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 480A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 480A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN028N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
PSMN028N10NS2-R2 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP050N10NS2_T0_00601 PSMP050N10NS2.pdf
PSMP050N10NS2_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.32 EUR
30+2.39 EUR
50+1.7 EUR
100+1.69 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMP050N10NS2_T0_00601 PSMP050N10NS2.pdf
PSMP050N10NS2_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 480A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.32 EUR
30+2.39 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
PSMP055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
34+2.12 EUR
61+1.19 EUR
74+0.97 EUR
79+0.92 EUR
1000+0.9 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
PSMP055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
61+1.19 EUR
74+0.97 EUR
79+0.92 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
PSMP075N15NS1_T0_00601 PSMP075N15NS1.pdf
Hersteller: PanJit Semiconductor
PSMP075N15NS1-T0 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PTGH4065S1_T0_00201
Hersteller: PanJit Semiconductor
PTGH4065S1-T0 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 8 10 12 13 14 15 16 17 18 19 20 21  [ Nächste Seite >> ]