Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1246) > Seite 17 nach 21
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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PJE8408_R1_00001 | PanJit Semiconductor |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 1A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±10V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3480 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PJE8428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523 Mounting: SMD Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: 10V Kind of package: reel; tape Case: SOT523 |
Produkt ist nicht verfügbar |
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| PJE8472B_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Case: SOT523 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJEC12VM1TA-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2 Mounting: SMD Breakdown voltage: 16.5V Max. forward impulse current: 3A Application: automotive industry Max. off-state voltage: 12V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOT23 Capacitance: 10pF Type of diode: TVS Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJEC12VM1TA_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2 Mounting: SMD Breakdown voltage: 16.5V Max. forward impulse current: 3A Max. off-state voltage: 12V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOT23 Capacitance: 10pF Type of diode: TVS Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJGBLC03C-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; ESD; SOD323 Type of diode: TVS array Breakdown voltage: 4.75...5.25V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 3.3V Leakage current: 20µA Number of channels: 1 Capacitance: 3pF Kind of package: reel; tape Version: ESD Application: automotive industry |
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PJGBLC03C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1 Type of diode: TVS array Breakdown voltage: 4.75...5.25V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 3.3V Leakage current: 20µA Number of channels: 1 Capacitance: 3pF Kind of package: reel; tape |
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PJGBLC05C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323; Ch: 1 Mounting: SMD Max. off-state voltage: 5V Breakdown voltage: 7.03...7.77V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 5µA Case: SOD323 Capacitance: 3pF Type of diode: TVS array Number of channels: 1 |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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PJGBLC12C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323 Mounting: SMD Max. off-state voltage: 12V Breakdown voltage: 13.97...15.44V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 1µA Case: SOD323 Capacitance: 3pF Type of diode: TVS array Number of channels: 1 |
auf Bestellung 1307 Stücke: Lieferzeit 14-21 Tag (e) |
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PJGL12_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1 Type of diode: TVS Case: SOT23 Mounting: SMD Max. off-state voltage: 12V Semiconductor structure: unidirectional Capacitance: 1.2pF Max. forward impulse current: 5A Breakdown voltage: 13.3V Leakage current: 1µA Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJL9812_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Case: SOP8 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJMB105N60FRC_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO263AB Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJMB125N60FRC_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V Kind of package: reel; tape Case: TO263AB Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PJMB130N65EC_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 29A Case: TO263 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJMB130N65EC_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 29A Case: TO263 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJMBZ15V_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 15.8V; 6A; 0.15kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 15.8V Max. forward impulse current: 6A Peak pulse power dissipation: 0.15kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Leakage current: 0.1µA Number of channels: 2 Capacitance: 80pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJMBZ27V_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 28.35V; 4A; 0.15kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 28.35V Max. forward impulse current: 4A Peak pulse power dissipation: 0.15kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 22V Leakage current: 50nA Number of channels: 2 Capacitance: 50pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJMBZ33A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; ESD Version: ESD Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 26V Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 50nA Case: SOT23 Type of diode: TVS array Number of channels: 2 Mounting: SMD Breakdown voltage: 31.35...34.65V |
Produkt ist nicht verfügbar |
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PJMBZ6V8A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; ESD; SOT23 Type of diode: TVS array Peak pulse power dissipation: 24W Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Kind of package: reel; tape Leakage current: 0.5µA Max. off-state voltage: 4.5V Version: ESD Application: automotive industry |
Produkt ist nicht verfügbar |
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| PJMD190N65FR2_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJMF099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 14W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A Gate charge: 60nC |
Produkt ist nicht verfügbar |
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| PJMF105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJMF125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB Polarisation: unipolar Drain current: 29A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V Kind of package: reel; tape Case: ITO220AB Mounting: THT |
Produkt ist nicht verfügbar |
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| PJMF130N65EC_T0_006A1 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB On-state resistance: 0.13Ω Mounting: THT Pulsed drain current: 63A Power dissipation: 14W Gate charge: 51nC Polarisation: unipolar Drain current: 29A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: ITO220AB |
Produkt ist nicht verfügbar |
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| PJMF190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.6A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJMF280N65E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 35.7W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMF390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 29.5W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJMH042N60FRC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 69A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJMH099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJMH105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJMH125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3 Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V Kind of package: reel; tape Case: TO247AD-3 Mounting: THT |
Produkt ist nicht verfügbar |
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| PJMH190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO247AD-3 Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJMP099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJMP105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJMP125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V Kind of package: reel; tape Case: TO220AB Mounting: THT |
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PJMP130N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJMP190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJQ4435EP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 45A Case: DFN3333-8 Gate-source voltage: 25V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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| PJQ4435EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -41A Pulsed drain current: -138A Power dissipation: 13.5W Case: DFN3333-8 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PJQ4437EP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8 Polarisation: unipolar Application: automotive industry Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain current: 41A Drain-source voltage: 30V Gate-source voltage: 25V |
Produkt ist nicht verfügbar |
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| PJQ4437EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W Polarisation: unipolar Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel Pulsed drain current: -123A Drain current: -38A Drain-source voltage: -30V Gate charge: 32nC On-state resistance: 15.4mΩ Power dissipation: 13.5W Gate-source voltage: ±25V |
Produkt ist nicht verfügbar |
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| PJQ4446P-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8 Application: automotive industry Polarisation: unipolar Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Gate-source voltage: 20V Drain-source voltage: 40V Drain current: 48A |
Produkt ist nicht verfügbar |
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| PJQ44605AP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 38A; DFN3333-8 Polarisation: unipolar Drain current: 38A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN3333-8 Mounting: SMD |
Produkt ist nicht verfügbar |
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| PJQ4463AP-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 60V Drain current: 4.2A Gate-source voltage: 20V Polarisation: unipolar Application: automotive industry |
Produkt ist nicht verfügbar |
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| PJQ4463AP_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 60V Drain current: 4.2A Gate-source voltage: 20V Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| PJQ4464AP-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8 Polarisation: unipolar Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain current: 33A Gate-source voltage: 20V Drain-source voltage: 60V Application: automotive industry |
Produkt ist nicht verfügbar |
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PJQ4465AP-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15A Case: DFN3333-8 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 20W Pulsed drain current: -60A Gate charge: 22nC On-state resistance: 65mΩ Application: automotive industry |
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| PJQ4465AP_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Case: DFN3333-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| PJQ4466P_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 33A Gate-source voltage: 20V Drain-source voltage: 60V Kind of package: reel; tape |
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| PJQ4468AP-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8 Case: DFN3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Polarisation: unipolar Drain current: 18A Kind of channel: enhancement |
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| PJQ4544S6P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8 Case: DFN3333-8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V |
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| PJQ4544S6VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN3333-8 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Case: DFN3333-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Application: automotive industry Polarisation: unipolar |
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PJQ4546VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 61A Pulsed drain current: 244A Power dissipation: 42W Case: DFN3333-8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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PJQ4548P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 13nC On-state resistance: 12.5mΩ Gate-source voltage: ±20V Power dissipation: 30W Drain current: 43A Drain-source voltage: 40V Pulsed drain current: 172A Polarisation: unipolar Application: automotive industry |
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| PJQ4548S6P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: 20V Drain current: 60A Drain-source voltage: 40V Polarisation: unipolar Application: automotive industry |
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| PJQ4548S6VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: 20V Drain current: 56A Drain-source voltage: 40V Polarisation: unipolar Application: automotive industry |
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PJQ4548VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 9.5nC On-state resistance: 12.7mΩ Gate-source voltage: ±20V Power dissipation: 30W Drain current: 40A Drain-source voltage: 40V Pulsed drain current: 160A Polarisation: unipolar Application: automotive industry |
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| PJQ4568AP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36A; DFN3333-8 Mounting: SMD Polarisation: unipolar Drain current: 36A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN3333-8 |
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| PJQ4594P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8 Case: DFN3333-8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 18A Gate-source voltage: 20V Drain-source voltage: 150V Application: automotive industry |
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| PJQ4670AP_R2_00201 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 10A Pulsed drain current: 148A Power dissipation: 15W Case: DFN3333-8 Gate-source voltage: 20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
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| PJE8408_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
| PJE8428_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
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| PJE8472B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJEC12VM1TA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJEC12VM1TA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJGBLC03C-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; ESD; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; ESD; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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| PJGBLC03C_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| PJGBLC05C_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Max. off-state voltage: 5V
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Max. off-state voltage: 5V
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
| PJGBLC12C_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Mounting: SMD
Max. off-state voltage: 12V
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Mounting: SMD
Max. off-state voltage: 12V
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
auf Bestellung 1307 Stücke:
Lieferzeit 14-21 Tag (e)
| PJGL12_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1
Type of diode: TVS
Case: SOT23
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Capacitance: 1.2pF
Max. forward impulse current: 5A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1
Type of diode: TVS
Case: SOT23
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Capacitance: 1.2pF
Max. forward impulse current: 5A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJL9812_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Case: SOP8
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Case: SOP8
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJMB105N60FRC_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| PJMB125N60FRC_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO263AB
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO263AB
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| PJMB130N65EC_R2_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
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| PJMB130N65EC_T0_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJMBZ15V_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.8V; 6A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 80pF
Category: Protection diodes - arrays
Description: Diode: TVS; 15.8V; 6A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 80pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJMBZ27V_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 28.35V; 4A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 28.35V
Max. forward impulse current: 4A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Leakage current: 50nA
Number of channels: 2
Capacitance: 50pF
Category: Protection diodes - arrays
Description: Diode: TVS; 28.35V; 4A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 28.35V
Max. forward impulse current: 4A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Leakage current: 50nA
Number of channels: 2
Capacitance: 50pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJMBZ33A-AU_R1_007A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; ESD
Version: ESD
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 26V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 31.35...34.65V
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; ESD
Version: ESD
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 26V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 31.35...34.65V
Produkt ist nicht verfügbar
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| PJMBZ6V8A-AU_R1_007A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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| PJMD190N65FR2_L2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJMF099N60EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
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| PJMF105N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| PJMF125N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: ITO220AB
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: ITO220AB
Mounting: THT
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Stück im Wert von UAH
| PJMF130N65EC_T0_006A1 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
On-state resistance: 0.13Ω
Mounting: THT
Pulsed drain current: 63A
Power dissipation: 14W
Gate charge: 51nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ITO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
On-state resistance: 0.13Ω
Mounting: THT
Pulsed drain current: 63A
Power dissipation: 14W
Gate charge: 51nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ITO220AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PJMF190N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| PJMF280N65E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| PJMF390N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
| PJMH042N60FRC_T0_00201 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| PJMH099N60EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH105N60FRC_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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Im Einkaufswagen
Stück im Wert von UAH
| PJMH125N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO247AD-3
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO247AD-3
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH190N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| PJMP099N60EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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Im Einkaufswagen
Stück im Wert von UAH
| PJMP105N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMP125N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO220AB
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO220AB
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMP130N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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Im Einkaufswagen
Stück im Wert von UAH
| PJMP190N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4435EP-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4435EP_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4437EP-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8
Polarisation: unipolar
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 41A
Drain-source voltage: 30V
Gate-source voltage: 25V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8
Polarisation: unipolar
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 41A
Drain-source voltage: 30V
Gate-source voltage: 25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4437EP_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4446P-AU_R2_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8
Application: automotive industry
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8
Application: automotive industry
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 48A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ44605AP-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; DFN3333-8
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; DFN3333-8
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4463AP-AU_R2_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4463AP_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
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| PJQ4464AP-AU_R2_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Application: automotive industry
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| PJQ4465AP-AU_R2_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: DFN3333-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 20W
Pulsed drain current: -60A
Gate charge: 22nC
On-state resistance: 65mΩ
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: DFN3333-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 20W
Pulsed drain current: -60A
Gate charge: 22nC
On-state resistance: 65mΩ
Application: automotive industry
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| PJQ4465AP_R2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJQ4466P_R2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Kind of package: reel; tape
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| PJQ4468AP-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
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| PJQ4544S6P-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
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| PJQ4544S6VP-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN3333-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN3333-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
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| PJQ4546VP-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJQ4548P-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 13nC
On-state resistance: 12.5mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 43A
Drain-source voltage: 40V
Pulsed drain current: 172A
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 13nC
On-state resistance: 12.5mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 43A
Drain-source voltage: 40V
Pulsed drain current: 172A
Polarisation: unipolar
Application: automotive industry
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| PJQ4548S6P-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 60A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 60A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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| PJQ4548S6VP-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 56A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 56A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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| PJQ4548VP-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 9.5nC
On-state resistance: 12.7mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 40A
Drain-source voltage: 40V
Pulsed drain current: 160A
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 9.5nC
On-state resistance: 12.7mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 40A
Drain-source voltage: 40V
Pulsed drain current: 160A
Polarisation: unipolar
Application: automotive industry
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| PJQ4568AP-AU_R2_002A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; DFN3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; DFN3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
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| PJQ4594P-AU_R2_002A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 150V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 150V
Application: automotive industry
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| PJQ4670AP_R2_00201 |
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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