Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1060) > Seite 13 nach 18
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 865 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 595 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ51A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ58A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| P6SMBJ58A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| P6SMBJ58CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
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| P6SMBJ58CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| P6SMBJ6.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ6.5A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 53.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ6.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 53.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| P6SMBJ64A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Application: automotive industry |
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| P6SMBJ64A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ7.5A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ70A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 5.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ8.0A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 44.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ85CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ90A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| P6SMBJ90CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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| PBHV8050SA_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 0.15A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Type of transistor: NPN Case: SOT23 Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBHV8110DW_R2_00701 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223 Mounting: SMD Type of transistor: NPN Case: SOT223 Collector current: 1A Power dissipation: 2.6W Collector-emitter voltage: 100V Frequency: 100MHz Polarisation: bipolar Kind of package: reel; tape |
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| PBHV9110DW_R2_00701 | PanJit Semiconductor |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223 Mounting: SMD Type of transistor: PNP Case: SOT223 Collector current: 1A Power dissipation: 2.6W Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
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| PCDF0465G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Power dissipation: 53.6W Kind of package: tube Technology: SiC Leakage current: 40µA Max. load current: 20A Max. forward impulse current: 360A |
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| PCDF0465G3_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.5V Power dissipation: 53.6W Kind of package: Ammo Pack |
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| PCDF0665G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Kind of package: tube Case: ITO220AC Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Leakage current: 50µA Load current: 6A Max. forward voltage: 1.8V Max. load current: 24A Max. forward impulse current: 0.32kA Power dissipation: 70.8W Max. off-state voltage: 650V |
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| PCDF0665G3_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V Kind of package: Ammo Pack Case: ITO220AC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Load current: 6A Max. forward voltage: 1.5V Power dissipation: 70.8W Max. off-state voltage: 650V |
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| PCDF0865G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 0.48kA Power dissipation: 78.1W |
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PCDH20120CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 52A Max. forward impulse current: 720A Leakage current: 0.1mA Kind of package: tube Max. forward voltage: 2V Power dissipation: 167.8W |
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| PCDH20120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 72A Max. forward impulse current: 0.92kA Leakage current: 0.1mA Kind of package: tube Max. forward voltage: 1.9V Power dissipation: 209W |
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.4V Max. load current: 48A Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube |
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| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube |
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PCDH3065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 135.1W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 64A Max. forward impulse current: 0.8kA Leakage current: 0.1mA Power dissipation: 135.1W Kind of package: tube |
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| PCDH3065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 217W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.4V Max. load current: 76A Max. forward impulse current: 960A Leakage current: 0.1mA Power dissipation: 217W Kind of package: tube |
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| PCDH3065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 138W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 48A Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube |
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PDZ10B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Tolerance: ±2% Application: automotive industry |
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PDZ10B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Tolerance: ±2% |
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PDZ33B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.4W Tolerance: ±2% Zener voltage: 33V Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
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PDZ33B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.4W Tolerance: ±2% Zener voltage: 33V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
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PDZ5.1B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
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PDZ8.2B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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PDZ8.2B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
auf Bestellung 8085 Stücke: Lieferzeit 14-21 Tag (e) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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| PE3324C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Type of diode: TVS Capacitance: 30pF Leakage current: 1µA Max. forward impulse current: 1A Number of channels: 2 Max. off-state voltage: 24V Breakdown voltage: 29.5V Peak pulse power dissipation: 0.35kW |
Produkt ist nicht verfügbar |
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PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD Version: ESD Mounting: SMD Kind of package: reel; tape Case: SOD523 Type of diode: TVS array Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 1 Max. off-state voltage: 5V Breakdown voltage: 6...7.5V Max. forward impulse current: 13A |
auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
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| PE4136C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Number of channels: 2 Application: automotive industry Semiconductor structure: unidirectional Type of diode: TVS Capacitance: 0.1nF Leakage current: 0.8µA Max. forward impulse current: 1A Max. off-state voltage: 36V Breakdown voltage: 40V Peak pulse power dissipation: 0.35kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PE4136C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Number of channels: 2 Semiconductor structure: unidirectional Type of diode: TVS Capacitance: 0.1nF Leakage current: 1µA Max. forward impulse current: 1A Max. off-state voltage: 36V Breakdown voltage: 40V Peak pulse power dissipation: 0.35kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PE4205M1Q_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 25A Semiconductor structure: unidirectional Mounting: SMD Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 1 Case: DFN1006-2 Capacitance: 0.25nF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PE4715L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1 Number of channels: 1 Max. off-state voltage: 15V Breakdown voltage: 16.5V Max. forward impulse current: 45A Application: automotive industry Case: DFN1610-2 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.48nF Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PE4715L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1 Number of channels: 1 Max. off-state voltage: 15V Breakdown voltage: 16.5V Max. forward impulse current: 45A Case: DFN1610-2 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.48nF Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PE4728L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1 Type of diode: TVS Mounting: SMD Case: DFN1610-2 Semiconductor structure: unidirectional Application: automotive industry Capacitance: 0.23nF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 27.5A Max. off-state voltage: 28V Breakdown voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PEC1305S1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1 Mounting: SMD Case: DFN0603-2 Type of diode: TVS Capacitance: 0.25pF Leakage current: 50nA Number of channels: 1 Max. forward impulse current: 1A Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PEC1605M1Q-AU_R1_005A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1 Mounting: SMD Capacitance: 0.6pF Application: automotive industry Semiconductor structure: bidirectional Case: DFN1006-2 Type of diode: TVS Leakage current: 75nA Number of channels: 1 Max. forward impulse current: 2A Max. off-state voltage: 5V Breakdown voltage: 6.8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Capacitance: 0.6pF Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD Kind of package: reel; tape Type of diode: TVS Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Application: automotive industry Semiconductor structure: bidirectional; double Mounting: SMD Version: ESD Kind of package: reel; tape Case: SOT23 Type of diode: TVS array Capacitance: 30pF Leakage current: 50nA Max. forward impulse current: 7A Number of channels: 2 Max. off-state voltage: 24V Breakdown voltage: 26.2...30.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| PJ30072S6_R1_00301 | PanJit Semiconductor |
Category: Voltage regulators - DC/DC circuits Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC Input voltage: 750mV DC...5.5V DC Output current: 0.75A Case: SOT23-6 Operating temperature: -40...85°C Type of converter: DC/DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2364 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ48A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ5.0A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 285+ | 0.25 EUR |
| 414+ | 0.17 EUR |
| 538+ | 0.13 EUR |
| 800+ | 0.12 EUR |
| P6SMBJ5.0CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 225+ | 0.32 EUR |
| 338+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| P6SMBJ51A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ58A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ58A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ58CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ58CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ6.0CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ6.5A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ6.5CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ64A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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| P6SMBJ64A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
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| P6SMBJ7.5A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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| P6SMBJ70A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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| P6SMBJ8.0A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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| P6SMBJ85CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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| P6SMBJ90A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
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| P6SMBJ90CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
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| PBHV8050SA_R1_00501 |
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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| PBHV8110DA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.66 EUR |
| PBHV8110DW_R2_00701 |
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Kind of package: reel; tape
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| PBHV9110DW_R2_00701 |
Hersteller: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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| PCDF0465G1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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| PCDF0465G3_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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| PCDF0665G1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 50µA
Load current: 6A
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 50µA
Load current: 6A
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Max. off-state voltage: 650V
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| PCDF0665G3_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Kind of package: Ammo Pack
Case: ITO220AC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Kind of package: Ammo Pack
Case: ITO220AC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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| PCDF0865G1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
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| PCDH20120CCG1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
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| PCDH20120CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
Produkt ist nicht verfügbar
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| PCDH2065CCG1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.71 EUR |
| 14+ | 5.15 EUR |
| 30+ | 4.55 EUR |
| PCDH2065CCGB_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Produkt ist nicht verfügbar
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| PCDH2065CCGC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PCDH3065CCG1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 135.1W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 64A
Max. forward impulse current: 0.8kA
Leakage current: 0.1mA
Power dissipation: 135.1W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 135.1W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 64A
Max. forward impulse current: 0.8kA
Leakage current: 0.1mA
Power dissipation: 135.1W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDH3065CCGB_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 217W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 76A
Max. forward impulse current: 960A
Leakage current: 0.1mA
Power dissipation: 217W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 217W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 76A
Max. forward impulse current: 960A
Leakage current: 0.1mA
Power dissipation: 217W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDH3065CCGC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZ10B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZ10B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZ33B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZ33B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZ5.1B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZ8.2B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZ8.2B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE1805C4A6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
auf Bestellung 8085 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 782+ | 0.092 EUR |
| 839+ | 0.085 EUR |
| 918+ | 0.078 EUR |
| 966+ | 0.074 EUR |
| 1000+ | 0.073 EUR |
| PE1805C4C6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 544+ | 0.13 EUR |
| 777+ | 0.092 EUR |
| 949+ | 0.075 EUR |
| 1021+ | 0.07 EUR |
| PE3324C2A_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4105C1ES_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.072 EUR |
| 1429+ | 0.05 EUR |
| 2033+ | 0.035 EUR |
| 2381+ | 0.03 EUR |
| 2500+ | 0.029 EUR |
| PE4136C2A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4136C2A_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4205M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4715L1Q-AU_R1_002A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4715L1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PE4728L1Q-AU_R1_002A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC1305S1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Case: DFN0603-2
Type of diode: TVS
Capacitance: 0.25pF
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Case: DFN0603-2
Type of diode: TVS
Capacitance: 0.25pF
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC1605M1Q-AU_R1_005A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC1605M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC3324C2A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Application: automotive industry
Semiconductor structure: bidirectional; double
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOT23
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. forward impulse current: 7A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Application: automotive industry
Semiconductor structure: bidirectional; double
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOT23
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. forward impulse current: 7A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
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| PJ30072S6_R1_00301 |
|
Hersteller: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Produkt ist nicht verfügbar
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| PJA3407_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 243+ | 0.29 EUR |
| 391+ | 0.18 EUR |
| 527+ | 0.14 EUR |
| 1000+ | 0.12 EUR |