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2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 PanJit Semiconductor 2N7002KDW-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3090 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
376+0.19 EUR
606+0.12 EUR
740+0.097 EUR
1313+0.054 EUR
1386+0.052 EUR
Mindestbestellmenge: 239
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2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 PanJit Semiconductor 2N7002KDW-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3090 Stücke:
Lieferzeit 7-14 Tag (e)
239+0.3 EUR
376+0.19 EUR
606+0.12 EUR
740+0.097 EUR
1313+0.054 EUR
1386+0.052 EUR
6000+0.05 EUR
Mindestbestellmenge: 239
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2N7002KDW_R1_00001 2N7002KDW_R1_00001 PanJit Semiconductor 2N7002KDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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2N7002KDW_R1_00001 2N7002KDW_R1_00001 PanJit Semiconductor 2N7002KDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
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2N7002K_R1_00001 2N7002K_R1_00001 PanJit Semiconductor 2N7002K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9055 Stücke:
Lieferzeit 7-14 Tag (e)
556+0.13 EUR
747+0.096 EUR
1260+0.057 EUR
1819+0.039 EUR
2907+0.025 EUR
3068+0.023 EUR
9000+0.022 EUR
Mindestbestellmenge: 556
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2N7002KW-AU_R1_000A1 2N7002KW-AU_R1_000A1 PanJit Semiconductor 2N7002KW-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
auf Bestellung 3549 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
353+0.2 EUR
646+0.11 EUR
2093+0.034 EUR
2213+0.032 EUR
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2N7002KW-AU_R1_000A1 2N7002KW-AU_R1_000A1 PanJit Semiconductor 2N7002KW-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3549 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
353+0.2 EUR
646+0.11 EUR
2093+0.034 EUR
2213+0.032 EUR
24000+0.031 EUR
Mindestbestellmenge: 295
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2N7002K_R1_00001 2N7002K_R1_00001 PanJit Semiconductor 2N7002K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
auf Bestellung 9055 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
747+0.096 EUR
1260+0.057 EUR
1819+0.039 EUR
2907+0.025 EUR
3068+0.023 EUR
9000+0.022 EUR
Mindestbestellmenge: 556
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2SB1197A_R1_00001 PanJit Semiconductor 2SB1197A.pdf 2SB1197A-R1 PNP SMD transistors
auf Bestellung 2644 Stücke:
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266+0.27 EUR
725+0.099 EUR
758+0.094 EUR
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2SD1781A_R1_00001 2SD1781A_R1_00001 PanJit Semiconductor 2SD1781A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 300...900
Collector current: 3A
Pulsed collector current: 5A
Type of transistor: NPN
Power dissipation: 1.25W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2320 Stücke:
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143+0.5 EUR
230+0.31 EUR
363+0.2 EUR
642+0.11 EUR
6000+0.1 EUR
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2SD1781A_R1_00001 2SD1781A_R1_00001 PanJit Semiconductor 2SD1781A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 300...900
Collector current: 3A
Pulsed collector current: 5A
Type of transistor: NPN
Power dissipation: 1.25W
Polarisation: bipolar
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
230+0.31 EUR
363+0.2 EUR
642+0.11 EUR
Mindestbestellmenge: 143
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3.0SMCJ18A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
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3.0SMCJ18A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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3.0SMCJ33CA_R1_00001 3.0SMCJ33CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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3.0SMCJ33CA_R1_00001 3.0SMCJ33CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
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ABS2MS_R2_00101 PanJit Semiconductor ABS2MS.pdf ABS2MS-R2 SMD/THT sing. phase diode bridge rectif.
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AZ23C5V6_R1_00001 PanJit Semiconductor AZ23C2V4_SERIES.pdf AZ23C5V6-R1 SMD Zener diodes
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B10S_R2_00001 B10S_R2_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Max. off-state voltage: 1kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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B10S_R2_00001 B10S_R2_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Max. off-state voltage: 1kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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B4S_R2_00001 B4S_R2_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5299 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
166+0.43 EUR
250+0.29 EUR
695+0.1 EUR
736+0.097 EUR
9000+0.096 EUR
21000+0.093 EUR
Mindestbestellmenge: 152
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B4S_R2_00001 B4S_R2_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
auf Bestellung 5299 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
166+0.43 EUR
250+0.29 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 152
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B6S_R2_00001 B6S_R2_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
290+0.25 EUR
414+0.17 EUR
676+0.11 EUR
715+0.1 EUR
6000+0.099 EUR
9000+0.097 EUR
Mindestbestellmenge: 193
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B6S_R2_00001 B6S_R2_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
290+0.25 EUR
414+0.17 EUR
676+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 193
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B8S_R2_00001 B8S_R2_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2700 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
252+0.28 EUR
382+0.19 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 173
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B8S_R2_00001 B8S_R2_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
252+0.28 EUR
382+0.19 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 173
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BAS100AS-AU_R1_000A1 PanJit Semiconductor BAS100AS-AU.pdf BAS100AS-AU-R1 SMD Schottky diodes
auf Bestellung 2243 Stücke:
Lieferzeit 7-14 Tag (e)
319+0.22 EUR
1090+0.066 EUR
1153+0.062 EUR
Mindestbestellmenge: 319
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BAS100ATB6_R1_00001 PanJit Semiconductor BAS100ATB6.pdf BAS100ATB6-R1 SMD Schottky diodes
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BAS100CS-AU_R1_000A1 PanJit Semiconductor BAS100CS-AU.pdf BAS100CS-AU-R1 SMD Schottky diodes
auf Bestellung 4594 Stücke:
Lieferzeit 7-14 Tag (e)
194+0.37 EUR
1211+0.059 EUR
1279+0.056 EUR
50000+0.055 EUR
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BAS100CS_R1_00001 PanJit Semiconductor BAS100CS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Leakage current: 40µA
Max. forward impulse current: 5.5A
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
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BAS100CS_R1_00001 PanJit Semiconductor BAS100CS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Leakage current: 40µA
Max. forward impulse current: 5.5A
Kind of package: reel
Produkt ist nicht verfügbar
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BAS16TS-AU_R1_000A1 BAS16TS-AU_R1_000A1 PanJit Semiconductor BAS16TS-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: fast switching
Application: automotive industry
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
667+0.11 EUR
1214+0.059 EUR
1539+0.046 EUR
1819+0.039 EUR
2476+0.029 EUR
2618+0.027 EUR
5000+0.026 EUR
Mindestbestellmenge: 500
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BAS16TS-AU_R1_000A1 BAS16TS-AU_R1_000A1 PanJit Semiconductor BAS16TS-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: fast switching
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
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500+0.14 EUR
667+0.11 EUR
1214+0.059 EUR
1539+0.046 EUR
1819+0.039 EUR
2476+0.029 EUR
2618+0.027 EUR
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BAS16TS_R1_00001 BAS16TS_R1_00001 PanJit Semiconductor BAS16TS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
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455+0.16 EUR
582+0.12 EUR
1433+0.05 EUR
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2300+0.031 EUR
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BAS16TS_R1_00001 BAS16TS_R1_00001 PanJit Semiconductor BAS16TS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: fast switching
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
582+0.12 EUR
1433+0.05 EUR
1909+0.037 EUR
2119+0.034 EUR
2300+0.031 EUR
Mindestbestellmenge: 455
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BAS16TW_R1_00001 BAS16TW_R1_00001 PanJit Semiconductor BAS16TW_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2844 Stücke:
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455+0.16 EUR
527+0.14 EUR
635+0.11 EUR
793+0.09 EUR
1441+0.05 EUR
1525+0.047 EUR
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BAS16TW_R1_00001 BAS16TW_R1_00001 PanJit Semiconductor BAS16TW_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Features of semiconductor devices: fast switching
auf Bestellung 2844 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
527+0.14 EUR
635+0.11 EUR
793+0.09 EUR
1441+0.05 EUR
1525+0.047 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS21_R1_00001 BAS21_R1_00001 PanJit Semiconductor BAS16_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
827+0.087 EUR
1250+0.057 EUR
2075+0.034 EUR
2294+0.031 EUR
2488+0.029 EUR
2841+0.025 EUR
2975+0.024 EUR
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BAS21_R1_00001 BAS21_R1_00001 PanJit Semiconductor BAS16_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 2975 Stücke:
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827+0.087 EUR
1250+0.057 EUR
2075+0.034 EUR
2294+0.031 EUR
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2841+0.025 EUR
2975+0.024 EUR
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BAS316_R1_00001 BAS316_R1_00001 PanJit Semiconductor BAS316.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3345 Stücke:
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1053+0.068 EUR
1613+0.044 EUR
2632+0.027 EUR
2924+0.024 EUR
3165+0.023 EUR
3345+0.021 EUR
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BAS316_R1_00001 BAS316_R1_00001 PanJit Semiconductor BAS316.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
auf Bestellung 3345 Stücke:
Lieferzeit 14-21 Tag (e)
1053+0.068 EUR
1613+0.044 EUR
2632+0.027 EUR
2924+0.024 EUR
3165+0.023 EUR
3345+0.021 EUR
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BAS40SDW-AU_R1_000A1 BAS40SDW-AU_R1_000A1 PanJit Semiconductor BAS40TW-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 22µA
Application: automotive industry
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
432+0.17 EUR
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718+0.1 EUR
1090+0.066 EUR
1153+0.062 EUR
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BAS40SDW-AU_R1_000A1 BAS40SDW-AU_R1_000A1 PanJit Semiconductor BAS40TW-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 22µA
Application: automotive industry
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
313+0.23 EUR
432+0.17 EUR
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3000+0.06 EUR
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BAS40SDW_R1_00001 BAS40SDW_R1_00001 PanJit Semiconductor BAS40TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Leakage current: 1µA
Load current: 0.2A
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Kind of package: reel; tape
Semiconductor structure: double series x2
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12000 Stücke:
Lieferzeit 7-14 Tag (e)
385+0.19 EUR
516+0.14 EUR
625+0.11 EUR
851+0.084 EUR
1194+0.06 EUR
1250+0.057 EUR
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BAS40SDW_R1_00001 BAS40SDW_R1_00001 PanJit Semiconductor BAS40TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Leakage current: 1µA
Load current: 0.2A
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Kind of package: reel; tape
Semiconductor structure: double series x2
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
516+0.14 EUR
625+0.11 EUR
851+0.084 EUR
1194+0.06 EUR
1250+0.057 EUR
1313+0.054 EUR
Mindestbestellmenge: 385
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BAS40S_R1_00001 BAS40S_R1_00001 PanJit Semiconductor BAS40_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2498 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
705+0.1 EUR
1194+0.06 EUR
1662+0.043 EUR
2203+0.032 EUR
2337+0.031 EUR
6000+0.03 EUR
Mindestbestellmenge: 455
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BAS40S_R1_00001 BAS40S_R1_00001 PanJit Semiconductor BAS40_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
705+0.1 EUR
1194+0.06 EUR
1662+0.043 EUR
2203+0.032 EUR
2337+0.031 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS40TS_R1_00001 PanJit Semiconductor BAS40TS.pdf BAS40TS-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
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BAS70A-AU_R1_000A1 BAS70A-AU_R1_000A1 PanJit Semiconductor BAS70-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
auf Bestellung 29998 Stücke:
Lieferzeit 14-21 Tag (e)
607+0.12 EUR
758+0.094 EUR
906+0.079 EUR
1276+0.056 EUR
1516+0.047 EUR
2093+0.034 EUR
2213+0.032 EUR
Mindestbestellmenge: 607
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BAS70A-AU_R1_000A1 BAS70A-AU_R1_000A1 PanJit Semiconductor BAS70-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29998 Stücke:
Lieferzeit 7-14 Tag (e)
607+0.12 EUR
758+0.094 EUR
906+0.079 EUR
1276+0.056 EUR
1516+0.047 EUR
2093+0.034 EUR
2213+0.032 EUR
Mindestbestellmenge: 607
Im Einkaufswagen  Stück im Wert von  UAH
BAS70S-AU_R1_000A1 PanJit Semiconductor BAS70-AU_SERIES.pdf BAS70S-AU-R1 SMD Schottky diodes
auf Bestellung 3803 Stücke:
Lieferzeit 7-14 Tag (e)
845+0.085 EUR
1993+0.036 EUR
2110+0.034 EUR
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BAS70SDW_R1_00001 PanJit Semiconductor BAS70TW_SERIES.pdf BAS70SDW-R1 SMD Schottky diodes
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Im Einkaufswagen  Stück im Wert von  UAH
BAS70TW_R1_00001 BAS70TW_R1_00001 PanJit Semiconductor BAS70TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3965 Stücke:
Lieferzeit 7-14 Tag (e)
385+0.19 EUR
569+0.13 EUR
811+0.088 EUR
946+0.076 EUR
1122+0.064 EUR
1185+0.06 EUR
1220+0.059 EUR
Mindestbestellmenge: 385
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BAS70TW_R1_00001 BAS70TW_R1_00001 PanJit Semiconductor BAS70TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
auf Bestellung 3965 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
569+0.13 EUR
811+0.088 EUR
946+0.076 EUR
1122+0.064 EUR
1185+0.06 EUR
1220+0.059 EUR
3000+0.058 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAS70WS_R1_00001 BAS70WS_R1_00001 PanJit Semiconductor BAS70WS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4461 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
715+0.1 EUR
1142+0.063 EUR
1894+0.038 EUR
2000+0.036 EUR
2058+0.035 EUR
5000+0.034 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS70WS_R1_00001 BAS70WS_R1_00001 PanJit Semiconductor BAS70WS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
auf Bestellung 4461 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
715+0.1 EUR
1142+0.063 EUR
1894+0.038 EUR
2000+0.036 EUR
2058+0.035 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAT42W_R1_00001 BAT42W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 528 Stücke:
Lieferzeit 7-14 Tag (e)
528+0.14 EUR
1000+0.072 EUR
3000+0.038 EUR
Mindestbestellmenge: 528
Im Einkaufswagen  Stück im Wert von  UAH
BAT42WS_R1_00001 BAT42WS_R1_00001 PanJit Semiconductor BAT42WS_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3989 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
575+0.12 EUR
960+0.075 EUR
1852+0.039 EUR
1961+0.036 EUR
10000+0.035 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAT42WS_R1_00001 BAT42WS_R1_00001 PanJit Semiconductor BAT42WS_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 3989 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
575+0.12 EUR
960+0.075 EUR
1852+0.039 EUR
1961+0.036 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAT42W_R1_00001 BAT42W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)
528+0.14 EUR
Mindestbestellmenge: 528
Im Einkaufswagen  Stück im Wert von  UAH
BAT43W_R1_00001 BAT43W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 805 Stücke:
Lieferzeit 7-14 Tag (e)
556+0.13 EUR
715+0.1 EUR
805+0.089 EUR
1000+0.072 EUR
1088+0.066 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 2N7002KDW-AU.pdf
2N7002KDW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3090 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
376+0.19 EUR
606+0.12 EUR
740+0.097 EUR
1313+0.054 EUR
1386+0.052 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 2N7002KDW-AU.pdf
2N7002KDW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3090 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
239+0.3 EUR
376+0.19 EUR
606+0.12 EUR
740+0.097 EUR
1313+0.054 EUR
1386+0.052 EUR
6000+0.05 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW_R1_00001 2N7002KDW.pdf
2N7002KDW_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW_R1_00001 2N7002KDW.pdf
2N7002KDW_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002K_R1_00001 2N7002K.pdf
2N7002K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9055 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
556+0.13 EUR
747+0.096 EUR
1260+0.057 EUR
1819+0.039 EUR
2907+0.025 EUR
3068+0.023 EUR
9000+0.022 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KW-AU_R1_000A1 2N7002KW-AU.pdf
2N7002KW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
auf Bestellung 3549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
353+0.2 EUR
646+0.11 EUR
2093+0.034 EUR
2213+0.032 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KW-AU_R1_000A1 2N7002KW-AU.pdf
2N7002KW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3549 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
295+0.24 EUR
353+0.2 EUR
646+0.11 EUR
2093+0.034 EUR
2213+0.032 EUR
24000+0.031 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
2N7002K_R1_00001 2N7002K.pdf
2N7002K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
auf Bestellung 9055 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
747+0.096 EUR
1260+0.057 EUR
1819+0.039 EUR
2907+0.025 EUR
3068+0.023 EUR
9000+0.022 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
2SB1197A_R1_00001 2SB1197A.pdf
Hersteller: PanJit Semiconductor
2SB1197A-R1 PNP SMD transistors
auf Bestellung 2644 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
266+0.27 EUR
725+0.099 EUR
758+0.094 EUR
Mindestbestellmenge: 266
Im Einkaufswagen  Stück im Wert von  UAH
2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 300...900
Collector current: 3A
Pulsed collector current: 5A
Type of transistor: NPN
Power dissipation: 1.25W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2320 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
143+0.5 EUR
230+0.31 EUR
363+0.2 EUR
642+0.11 EUR
6000+0.1 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 300...900
Collector current: 3A
Pulsed collector current: 5A
Type of transistor: NPN
Power dissipation: 1.25W
Polarisation: bipolar
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
230+0.31 EUR
363+0.2 EUR
642+0.11 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
3.0SMCJ18A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
3.0SMCJ18A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
3.0SMCJ33CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ33CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
3.0SMCJ33CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ33CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ABS2MS_R2_00101 ABS2MS.pdf
Hersteller: PanJit Semiconductor
ABS2MS-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AZ23C5V6_R1_00001 AZ23C2V4_SERIES.pdf
Hersteller: PanJit Semiconductor
AZ23C5V6-R1 SMD Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B10S_R2_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982
B10S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Max. off-state voltage: 1kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B10S_R2_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982
B10S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Max. off-state voltage: 1kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B4S_R2_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982
B4S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5299 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
152+0.47 EUR
166+0.43 EUR
250+0.29 EUR
695+0.1 EUR
736+0.097 EUR
9000+0.096 EUR
21000+0.093 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
B4S_R2_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982
B4S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
auf Bestellung 5299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
166+0.43 EUR
250+0.29 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
B6S_R2_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982
B6S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
193+0.37 EUR
290+0.25 EUR
414+0.17 EUR
676+0.11 EUR
715+0.1 EUR
6000+0.099 EUR
9000+0.097 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
B6S_R2_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982
B6S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
290+0.25 EUR
414+0.17 EUR
676+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
B8S_R2_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982
B8S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2700 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
173+0.41 EUR
252+0.28 EUR
382+0.19 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
B8S_R2_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CFE4554C38060D6&compId=B1S_SERIES.pdf?ci_sign=f3b5032ebbe7099c12e901a69e4da5d78c416982
B8S_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 35A
Case: MDI
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 0.8A
Max. forward voltage: 1V
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
252+0.28 EUR
382+0.19 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BAS100AS-AU_R1_000A1 BAS100AS-AU.pdf
Hersteller: PanJit Semiconductor
BAS100AS-AU-R1 SMD Schottky diodes
auf Bestellung 2243 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
319+0.22 EUR
1090+0.066 EUR
1153+0.062 EUR
Mindestbestellmenge: 319
Im Einkaufswagen  Stück im Wert von  UAH
BAS100ATB6_R1_00001 BAS100ATB6.pdf
Hersteller: PanJit Semiconductor
BAS100ATB6-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS100CS-AU_R1_000A1 BAS100CS-AU.pdf
Hersteller: PanJit Semiconductor
BAS100CS-AU-R1 SMD Schottky diodes
auf Bestellung 4594 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
194+0.37 EUR
1211+0.059 EUR
1279+0.056 EUR
50000+0.055 EUR
Mindestbestellmenge: 194
Im Einkaufswagen  Stück im Wert von  UAH
BAS100CS_R1_00001 BAS100CS.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Leakage current: 40µA
Max. forward impulse current: 5.5A
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS100CS_R1_00001 BAS100CS.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Leakage current: 40µA
Max. forward impulse current: 5.5A
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16TS-AU_R1_000A1 BAS16TS-AU.pdf
BAS16TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: fast switching
Application: automotive industry
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
667+0.11 EUR
1214+0.059 EUR
1539+0.046 EUR
1819+0.039 EUR
2476+0.029 EUR
2618+0.027 EUR
5000+0.026 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAS16TS-AU_R1_000A1 BAS16TS-AU.pdf
BAS16TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: fast switching
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
500+0.14 EUR
667+0.11 EUR
1214+0.059 EUR
1539+0.046 EUR
1819+0.039 EUR
2476+0.029 EUR
2618+0.027 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAS16TS_R1_00001 BAS16TS.pdf
BAS16TS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2300 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
582+0.12 EUR
1433+0.05 EUR
1909+0.037 EUR
2119+0.034 EUR
2300+0.031 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS16TS_R1_00001 BAS16TS.pdf
BAS16TS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Features of semiconductor devices: fast switching
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
582+0.12 EUR
1433+0.05 EUR
1909+0.037 EUR
2119+0.034 EUR
2300+0.031 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS16TW_R1_00001 BAS16TW_SERIES.pdf
BAS16TW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2844 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
527+0.14 EUR
635+0.11 EUR
793+0.09 EUR
1441+0.05 EUR
1525+0.047 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS16TW_R1_00001 BAS16TW_SERIES.pdf
BAS16TW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Features of semiconductor devices: fast switching
auf Bestellung 2844 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
527+0.14 EUR
635+0.11 EUR
793+0.09 EUR
1441+0.05 EUR
1525+0.047 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS21_R1_00001 BAS16_SERIES.pdf
BAS21_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
827+0.087 EUR
1250+0.057 EUR
2075+0.034 EUR
2294+0.031 EUR
2488+0.029 EUR
2841+0.025 EUR
2975+0.024 EUR
Mindestbestellmenge: 827
Im Einkaufswagen  Stück im Wert von  UAH
BAS21_R1_00001 BAS16_SERIES.pdf
BAS21_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
827+0.087 EUR
1250+0.057 EUR
2075+0.034 EUR
2294+0.031 EUR
2488+0.029 EUR
2841+0.025 EUR
2975+0.024 EUR
Mindestbestellmenge: 827
Im Einkaufswagen  Stück im Wert von  UAH
BAS316_R1_00001 BAS316.pdf
BAS316_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3345 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1053+0.068 EUR
1613+0.044 EUR
2632+0.027 EUR
2924+0.024 EUR
3165+0.023 EUR
3345+0.021 EUR
Mindestbestellmenge: 1053
Im Einkaufswagen  Stück im Wert von  UAH
BAS316_R1_00001 BAS316.pdf
BAS316_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
auf Bestellung 3345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1053+0.068 EUR
1613+0.044 EUR
2632+0.027 EUR
2924+0.024 EUR
3165+0.023 EUR
3345+0.021 EUR
Mindestbestellmenge: 1053
Im Einkaufswagen  Stück im Wert von  UAH
BAS40SDW-AU_R1_000A1 BAS40TW-AU_SERIES.pdf
BAS40SDW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 22µA
Application: automotive industry
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
432+0.17 EUR
528+0.14 EUR
718+0.1 EUR
1090+0.066 EUR
1153+0.062 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BAS40SDW-AU_R1_000A1 BAS40TW-AU_SERIES.pdf
BAS40SDW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 22µA
Application: automotive industry
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
313+0.23 EUR
432+0.17 EUR
528+0.14 EUR
718+0.1 EUR
1090+0.066 EUR
1153+0.062 EUR
3000+0.06 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BAS40SDW_R1_00001 BAS40TW_SERIES.pdf
BAS40SDW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Leakage current: 1µA
Load current: 0.2A
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Kind of package: reel; tape
Semiconductor structure: double series x2
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
385+0.19 EUR
516+0.14 EUR
625+0.11 EUR
851+0.084 EUR
1194+0.06 EUR
1250+0.057 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAS40SDW_R1_00001 BAS40TW_SERIES.pdf
BAS40SDW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Leakage current: 1µA
Load current: 0.2A
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Kind of package: reel; tape
Semiconductor structure: double series x2
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
516+0.14 EUR
625+0.11 EUR
851+0.084 EUR
1194+0.06 EUR
1250+0.057 EUR
1313+0.054 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAS40S_R1_00001 BAS40_SERIES.pdf
BAS40S_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2498 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
705+0.1 EUR
1194+0.06 EUR
1662+0.043 EUR
2203+0.032 EUR
2337+0.031 EUR
6000+0.03 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS40S_R1_00001 BAS40_SERIES.pdf
BAS40S_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
705+0.1 EUR
1194+0.06 EUR
1662+0.043 EUR
2203+0.032 EUR
2337+0.031 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS40TS_R1_00001 BAS40TS.pdf
Hersteller: PanJit Semiconductor
BAS40TS-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70A-AU_R1_000A1 BAS70-AU_SERIES.pdf
BAS70A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
auf Bestellung 29998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
607+0.12 EUR
758+0.094 EUR
906+0.079 EUR
1276+0.056 EUR
1516+0.047 EUR
2093+0.034 EUR
2213+0.032 EUR
Mindestbestellmenge: 607
Im Einkaufswagen  Stück im Wert von  UAH
BAS70A-AU_R1_000A1 BAS70-AU_SERIES.pdf
BAS70A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29998 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
607+0.12 EUR
758+0.094 EUR
906+0.079 EUR
1276+0.056 EUR
1516+0.047 EUR
2093+0.034 EUR
2213+0.032 EUR
Mindestbestellmenge: 607
Im Einkaufswagen  Stück im Wert von  UAH
BAS70S-AU_R1_000A1 BAS70-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
BAS70S-AU-R1 SMD Schottky diodes
auf Bestellung 3803 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
845+0.085 EUR
1993+0.036 EUR
2110+0.034 EUR
Mindestbestellmenge: 845
Im Einkaufswagen  Stück im Wert von  UAH
BAS70SDW_R1_00001 BAS70TW_SERIES.pdf
Hersteller: PanJit Semiconductor
BAS70SDW-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70TW_R1_00001 BAS70TW_SERIES.pdf
BAS70TW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3965 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
385+0.19 EUR
569+0.13 EUR
811+0.088 EUR
946+0.076 EUR
1122+0.064 EUR
1185+0.06 EUR
1220+0.059 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAS70TW_R1_00001 BAS70TW_SERIES.pdf
BAS70TW_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
auf Bestellung 3965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
569+0.13 EUR
811+0.088 EUR
946+0.076 EUR
1122+0.064 EUR
1185+0.06 EUR
1220+0.059 EUR
3000+0.058 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAS70WS_R1_00001 BAS70WS.pdf
BAS70WS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4461 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
1142+0.063 EUR
1894+0.038 EUR
2000+0.036 EUR
2058+0.035 EUR
5000+0.034 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS70WS_R1_00001 BAS70WS.pdf
BAS70WS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
auf Bestellung 4461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
1142+0.063 EUR
1894+0.038 EUR
2000+0.036 EUR
2058+0.035 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAT42W_R1_00001 BAT42W_SERIES.pdf
BAT42W_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 528 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
528+0.14 EUR
1000+0.072 EUR
3000+0.038 EUR
Mindestbestellmenge: 528
Im Einkaufswagen  Stück im Wert von  UAH
BAT42WS_R1_00001 BAT42WS_SERIES.pdf
BAT42WS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3989 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
358+0.2 EUR
575+0.12 EUR
960+0.075 EUR
1852+0.039 EUR
1961+0.036 EUR
10000+0.035 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAT42WS_R1_00001 BAT42WS_SERIES.pdf
BAT42WS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 3989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
575+0.12 EUR
960+0.075 EUR
1852+0.039 EUR
1961+0.036 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAT42W_R1_00001 BAT42W_SERIES.pdf
BAT42W_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
528+0.14 EUR
Mindestbestellmenge: 528
Im Einkaufswagen  Stück im Wert von  UAH
BAT43W_R1_00001 BAT42W_SERIES.pdf
BAT43W_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 805 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
556+0.13 EUR
715+0.1 EUR
805+0.089 EUR
1000+0.072 EUR
1088+0.066 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
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