Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1206) > Seite 2 nach 21
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2N7002K-AU_R1_000A2 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 2A Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 180 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002KDW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry |
auf Bestellung 3101 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002KDW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3101 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002KDW_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N7002KDW_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N7002K_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 2A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9480 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002KW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry |
auf Bestellung 3549 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002KW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3549 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002K_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 2A |
auf Bestellung 9480 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1197A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 180MHz Pulsed collector current: 3.5A Power dissipation: 1.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2610 Stücke: Lieferzeit 7-14 Tag (e) |
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2SB1197A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 180MHz Pulsed collector current: 3.5A Power dissipation: 1.25W |
auf Bestellung 2610 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1781A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.25W Case: SOT23 Current gain: 300...900 Mounting: SMD Frequency: 250MHz Pulsed collector current: 5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 720 Stücke: Lieferzeit 7-14 Tag (e) |
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2SD1781A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.25W Case: SOT23 Current gain: 300...900 Mounting: SMD Frequency: 250MHz Pulsed collector current: 5A |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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3.0SMCJ18A-AU_R1_000A1 | PanJit Semiconductor | 3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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3.0SMCJ33CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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3.0SMCJ33CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
ABS2MS_R2_00101 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
AZ23C5V6_R1_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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B10S_R2_00001 | PanJit Semiconductor |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 35A Case: MDI Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7377 Stücke: Lieferzeit 7-14 Tag (e) |
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B10S_R2_00001 | PanJit Semiconductor |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 35A Case: MDI Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1V |
auf Bestellung 7377 Stücke: Lieferzeit 14-21 Tag (e) |
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B4S_R2_00001 | PanJit Semiconductor |
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auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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B6S_R2_00001 | PanJit Semiconductor |
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auf Bestellung 524 Stücke: Lieferzeit 7-14 Tag (e) |
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B8S_R2_00001 | PanJit Semiconductor | B8S-R2 SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS100AS-AU_R1_000A1 | PanJit Semiconductor |
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auf Bestellung 2243 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS100ATB6_R1_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
BAS100CS-AU_R1_000A1 | PanJit Semiconductor |
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auf Bestellung 4594 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS100CS_R1_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BAS16TS-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 1µA Application: automotive industry |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16TS-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 1µA Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16TS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOD523 Max. forward voltage: 0.855V Leakage current: 1µA Reverse recovery time: 6ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16TS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOD523 Max. forward voltage: 0.855V Leakage current: 1µA Reverse recovery time: 6ns |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 2.5µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2854 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 2.5µA |
auf Bestellung 2854 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS21_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2.5A Kind of package: reel; tape Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2975 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS21_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2.5A Kind of package: reel; tape Leakage current: 1µA |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS316_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Mounting: SMD Type of diode: switching Features of semiconductor devices: fast switching Case: SOD323 Max. off-state voltage: 100V Max. load current: 0.5A Max. forward voltage: 1.25V Load current: 0.25A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 4A Leakage current: 0.5µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3460 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS316_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Mounting: SMD Type of diode: switching Features of semiconductor devices: fast switching Case: SOD323 Max. off-state voltage: 100V Max. load current: 0.5A Max. forward voltage: 1.25V Load current: 0.25A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 4A Leakage current: 0.5µA Kind of package: reel; tape |
auf Bestellung 3460 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS40SDW-AU_R1_000A1 | PanJit Semiconductor |
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auf Bestellung 2970 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS40SDW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Leakage current: 1µA Power dissipation: 0.225W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS40SDW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Leakage current: 1µA Power dissipation: 0.225W |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS40S_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Leakage current: 1µA Power dissipation: 0.225W Features of semiconductor devices: fast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2498 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS40S_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Leakage current: 1µA Power dissipation: 0.225W Features of semiconductor devices: fast switching |
auf Bestellung 2498 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS40TS_R1_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BAS70A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.9V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 29998 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.9V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29998 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS70S-AU_R1_000A1 | PanJit Semiconductor |
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auf Bestellung 3803 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS70SDW_R1_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BAS70TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: triple independent Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W Max. forward impulse current: 0.6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3965 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS70TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: triple independent Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W Max. forward impulse current: 0.6A |
auf Bestellung 3965 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 0.225W Features of semiconductor devices: fast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2342 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS70WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 0.225W Features of semiconductor devices: fast switching |
auf Bestellung 2342 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT42W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 0.5µA Max. forward impulse current: 4A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 539 Stücke: Lieferzeit 7-14 Tag (e) |
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BAT42WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 0.5µA Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5140 Stücke: Lieferzeit 7-14 Tag (e) |
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BAT42WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 0.5µA Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
auf Bestellung 5140 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT42W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 0.5µA Max. forward impulse current: 4A Kind of package: reel; tape |
auf Bestellung 539 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT43W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 905 Stücke: Lieferzeit 7-14 Tag (e) |
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BAT43W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
auf Bestellung 905 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2724 Stücke: Lieferzeit 7-14 Tag (e) |
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BAT54A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching |
auf Bestellung 2724 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54C-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 90µA Max. forward impulse current: 0.6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
2N7002K-AU_R1_000A2 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
180+ | 0.40 EUR |
445+ | 0.16 EUR |
1222+ | 0.06 EUR |
6000+ | 0.03 EUR |
2N7002KDW-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
auf Bestellung 3101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
371+ | 0.19 EUR |
585+ | 0.12 EUR |
709+ | 0.10 EUR |
1313+ | 0.05 EUR |
1389+ | 0.05 EUR |
2N7002KDW-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3101 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
371+ | 0.19 EUR |
585+ | 0.12 EUR |
709+ | 0.10 EUR |
1313+ | 0.05 EUR |
1389+ | 0.05 EUR |
6000+ | 0.05 EUR |
2N7002KDW_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002KDW_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002K_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9480 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
715+ | 0.10 EUR |
1235+ | 0.06 EUR |
2907+ | 0.03 EUR |
3068+ | 0.02 EUR |
2N7002KW-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
auf Bestellung 3549 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
439+ | 0.16 EUR |
705+ | 0.10 EUR |
2101+ | 0.03 EUR |
2223+ | 0.03 EUR |
2N7002KW-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3549 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
439+ | 0.16 EUR |
705+ | 0.10 EUR |
2101+ | 0.03 EUR |
2223+ | 0.03 EUR |
24000+ | 0.03 EUR |
2N7002K_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
auf Bestellung 9480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
715+ | 0.10 EUR |
1235+ | 0.06 EUR |
2907+ | 0.03 EUR |
3068+ | 0.02 EUR |
2SB1197A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 3.5A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 3.5A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2610 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
400+ | 0.18 EUR |
447+ | 0.16 EUR |
705+ | 0.10 EUR |
747+ | 0.10 EUR |
2SB1197A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 3.5A
Power dissipation: 1.25W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 3.5A
Power dissipation: 1.25W
auf Bestellung 2610 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
400+ | 0.18 EUR |
447+ | 0.16 EUR |
705+ | 0.10 EUR |
747+ | 0.10 EUR |
2SD1781A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 720 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
234+ | 0.31 EUR |
363+ | 0.20 EUR |
720+ | 0.10 EUR |
24000+ | 0.09 EUR |
2SD1781A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
234+ | 0.31 EUR |
363+ | 0.20 EUR |
720+ | 0.10 EUR |
3.0SMCJ18A-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes
3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
3.0SMCJ33CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
3.0SMCJ33CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ABS2MS_R2_00101 |
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Hersteller: PanJit Semiconductor
ABS2MS-R2 SMD/THT sing. phase diode bridge rectif.
ABS2MS-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AZ23C5V6_R1_00001 |
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Hersteller: PanJit Semiconductor
AZ23C5V6-R1 SMD Zener diodes
AZ23C5V6-R1 SMD Zener diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B10S_R2_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7377 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.50 EUR |
211+ | 0.34 EUR |
313+ | 0.23 EUR |
569+ | 0.13 EUR |
596+ | 0.12 EUR |
B10S_R2_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
auf Bestellung 7377 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.50 EUR |
211+ | 0.34 EUR |
313+ | 0.23 EUR |
569+ | 0.13 EUR |
596+ | 0.12 EUR |
B4S_R2_00001 |
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Hersteller: PanJit Semiconductor
B4S-R2 SMD/THT sing. phase diode bridge rectif.
B4S-R2 SMD/THT sing. phase diode bridge rectif.
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
123+ | 0.58 EUR |
695+ | 0.10 EUR |
736+ | 0.10 EUR |
45000+ | 0.09 EUR |
B6S_R2_00001 |
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Hersteller: PanJit Semiconductor
B6S-R2 SMD/THT sing. phase diode bridge rectif.
B6S-R2 SMD/THT sing. phase diode bridge rectif.
auf Bestellung 524 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
182+ | 0.39 EUR |
524+ | 0.14 EUR |
15000+ | 0.09 EUR |
B8S_R2_00001 |
Hersteller: PanJit Semiconductor
B8S-R2 SMD/THT sing. phase diode bridge rectif.
B8S-R2 SMD/THT sing. phase diode bridge rectif.
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
155+ | 0.46 EUR |
715+ | 0.10 EUR |
758+ | 0.09 EUR |
BAS100AS-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
BAS100AS-AU-R1 SMD Schottky diodes
BAS100AS-AU-R1 SMD Schottky diodes
auf Bestellung 2243 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
319+ | 0.22 EUR |
1090+ | 0.07 EUR |
1153+ | 0.06 EUR |
BAS100ATB6_R1_00001 |
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Hersteller: PanJit Semiconductor
BAS100ATB6-R1 SMD Schottky diodes
BAS100ATB6-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS100CS-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
BAS100CS-AU-R1 SMD Schottky diodes
BAS100CS-AU-R1 SMD Schottky diodes
auf Bestellung 4594 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
194+ | 0.37 EUR |
1211+ | 0.06 EUR |
1279+ | 0.06 EUR |
50000+ | 0.06 EUR |
BAS100CS_R1_00001 |
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Hersteller: PanJit Semiconductor
BAS100CS-R1 SMD Schottky diodes
BAS100CS-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS16TS-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 1µA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 1µA
Application: automotive industry
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
667+ | 0.11 EUR |
1214+ | 0.06 EUR |
1539+ | 0.05 EUR |
1819+ | 0.04 EUR |
2464+ | 0.03 EUR |
2605+ | 0.03 EUR |
5000+ | 0.03 EUR |
BAS16TS-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 1µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 1µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
667+ | 0.11 EUR |
1214+ | 0.06 EUR |
1539+ | 0.05 EUR |
1819+ | 0.04 EUR |
2464+ | 0.03 EUR |
2605+ | 0.03 EUR |
BAS16TS_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
582+ | 0.12 EUR |
1433+ | 0.05 EUR |
1909+ | 0.04 EUR |
2119+ | 0.03 EUR |
2500+ | 0.03 EUR |
BAS16TS_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
582+ | 0.12 EUR |
1433+ | 0.05 EUR |
1909+ | 0.04 EUR |
2119+ | 0.03 EUR |
2500+ | 0.03 EUR |
BAS16TW_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2854 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
527+ | 0.14 EUR |
635+ | 0.11 EUR |
793+ | 0.09 EUR |
1437+ | 0.05 EUR |
1520+ | 0.05 EUR |
BAS16TW_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
auf Bestellung 2854 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
527+ | 0.14 EUR |
635+ | 0.11 EUR |
793+ | 0.09 EUR |
1437+ | 0.05 EUR |
1520+ | 0.05 EUR |
BAS21_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
827+ | 0.09 EUR |
1250+ | 0.06 EUR |
2075+ | 0.03 EUR |
2294+ | 0.03 EUR |
2488+ | 0.03 EUR |
2825+ | 0.03 EUR |
2975+ | 0.02 EUR |
BAS21_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
827+ | 0.09 EUR |
1250+ | 0.06 EUR |
2075+ | 0.03 EUR |
2294+ | 0.03 EUR |
2488+ | 0.03 EUR |
2825+ | 0.03 EUR |
2975+ | 0.02 EUR |
BAS316_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Mounting: SMD
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOD323
Max. off-state voltage: 100V
Max. load current: 0.5A
Max. forward voltage: 1.25V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Mounting: SMD
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOD323
Max. off-state voltage: 100V
Max. load current: 0.5A
Max. forward voltage: 1.25V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3460 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1053+ | 0.07 EUR |
1613+ | 0.04 EUR |
2632+ | 0.03 EUR |
2924+ | 0.02 EUR |
3165+ | 0.02 EUR |
3460+ | 0.02 EUR |
BAS316_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Mounting: SMD
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOD323
Max. off-state voltage: 100V
Max. load current: 0.5A
Max. forward voltage: 1.25V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Mounting: SMD
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOD323
Max. off-state voltage: 100V
Max. load current: 0.5A
Max. forward voltage: 1.25V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
auf Bestellung 3460 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1053+ | 0.07 EUR |
1613+ | 0.04 EUR |
2632+ | 0.03 EUR |
2924+ | 0.02 EUR |
3165+ | 0.02 EUR |
3460+ | 0.02 EUR |
BAS40SDW-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
BAS40SDW-AU-R1 SMD Schottky diodes
BAS40SDW-AU-R1 SMD Schottky diodes
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
172+ | 0.42 EUR |
1090+ | 0.07 EUR |
1153+ | 0.06 EUR |
24000+ | 0.06 EUR |
BAS40SDW_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
407+ | 0.18 EUR |
513+ | 0.14 EUR |
754+ | 0.10 EUR |
1197+ | 0.06 EUR |
1266+ | 0.06 EUR |
BAS40SDW_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
407+ | 0.18 EUR |
513+ | 0.14 EUR |
754+ | 0.10 EUR |
1197+ | 0.06 EUR |
1266+ | 0.06 EUR |
BAS40S_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2498 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
725+ | 0.10 EUR |
1155+ | 0.06 EUR |
1378+ | 0.05 EUR |
1568+ | 0.05 EUR |
2213+ | 0.03 EUR |
2348+ | 0.03 EUR |
BAS40S_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
725+ | 0.10 EUR |
1155+ | 0.06 EUR |
1378+ | 0.05 EUR |
1568+ | 0.05 EUR |
2213+ | 0.03 EUR |
2348+ | 0.03 EUR |
BAS40TS_R1_00001 |
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Hersteller: PanJit Semiconductor
BAS40TS-R1 SMD Schottky diodes
BAS40TS-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS70A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 29998 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
607+ | 0.12 EUR |
758+ | 0.09 EUR |
906+ | 0.08 EUR |
1276+ | 0.06 EUR |
1516+ | 0.05 EUR |
2110+ | 0.03 EUR |
2233+ | 0.03 EUR |
BAS70A-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29998 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
607+ | 0.12 EUR |
758+ | 0.09 EUR |
906+ | 0.08 EUR |
1276+ | 0.06 EUR |
1516+ | 0.05 EUR |
2110+ | 0.03 EUR |
2233+ | 0.03 EUR |
BAS70S-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
BAS70S-AU-R1 SMD Schottky diodes
BAS70S-AU-R1 SMD Schottky diodes
auf Bestellung 3803 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
845+ | 0.09 EUR |
1993+ | 0.04 EUR |
2110+ | 0.03 EUR |
BAS70SDW_R1_00001 |
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Hersteller: PanJit Semiconductor
BAS70SDW-R1 SMD Schottky diodes
BAS70SDW-R1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS70TW_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3965 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
650+ | 0.11 EUR |
869+ | 0.08 EUR |
960+ | 0.08 EUR |
1038+ | 0.07 EUR |
1097+ | 0.07 EUR |
1161+ | 0.06 EUR |
BAS70TW_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
auf Bestellung 3965 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
650+ | 0.11 EUR |
869+ | 0.08 EUR |
960+ | 0.08 EUR |
1038+ | 0.07 EUR |
1097+ | 0.07 EUR |
1161+ | 0.06 EUR |
1205+ | 0.06 EUR |
BAS70WS_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2342 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
834+ | 0.09 EUR |
1327+ | 0.05 EUR |
1553+ | 0.05 EUR |
1954+ | 0.04 EUR |
2067+ | 0.04 EUR |
5000+ | 0.03 EUR |
BAS70WS_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
auf Bestellung 2342 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
834+ | 0.09 EUR |
1327+ | 0.05 EUR |
1553+ | 0.05 EUR |
1954+ | 0.04 EUR |
2067+ | 0.04 EUR |
BAT42W_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 539 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
539+ | 0.13 EUR |
1000+ | 0.07 EUR |
1088+ | 0.07 EUR |
BAT42WS_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5140 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
695+ | 0.10 EUR |
1069+ | 0.07 EUR |
1250+ | 0.06 EUR |
1859+ | 0.04 EUR |
1969+ | 0.04 EUR |
10000+ | 0.04 EUR |
BAT42WS_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
695+ | 0.10 EUR |
1069+ | 0.07 EUR |
1250+ | 0.06 EUR |
1859+ | 0.04 EUR |
1969+ | 0.04 EUR |
BAT42W_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.5µA
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
539+ | 0.13 EUR |
BAT43W_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 905 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
747+ | 0.10 EUR |
905+ | 0.08 EUR |
1000+ | 0.07 EUR |
1088+ | 0.07 EUR |
BAT43W_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
747+ | 0.10 EUR |
905+ | 0.08 EUR |
BAT54A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2724 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
555+ | 0.13 EUR |
944+ | 0.08 EUR |
1244+ | 0.06 EUR |
1421+ | 0.05 EUR |
1598+ | 0.05 EUR |
2724+ | 0.03 EUR |
BAT54A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
auf Bestellung 2724 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
555+ | 0.13 EUR |
944+ | 0.08 EUR |
1244+ | 0.06 EUR |
1421+ | 0.05 EUR |
1598+ | 0.05 EUR |
2724+ | 0.03 EUR |
BAT54C-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH