Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1463) > Seite 16 nach 25
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| P6SMBJ24A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ28A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ28A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 785 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ28A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1600 Stücke: Lieferzeit 7-14 Tag (e) |
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| P6SMBJ28CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ30A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 365 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ30CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ30CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ33A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 850 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Application: automotive industry |
auf Bestellung 968 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 968 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ33CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P6SMBJ36A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ36A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ36CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 375 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ40CA_R2_00001 | PanJit Semiconductor | P6SMBJ40CA-R2 Bidirectional TVS SMD diodes |
auf Bestellung 5987 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P6SMBJ48CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ48CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 985 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 985 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 595 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 595 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ58A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ58A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ58CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ58CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 520 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ60CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ60CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ64A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ64A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ7.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
P6SMBJ7.5CA-R1 Bidirectional TVS SMD diodes |
auf Bestellung 430 Stücke: Lieferzeit 7-14 Tag (e) |
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| P6SMBJ75A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ78A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ85CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ90A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ90CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PBHV8050SA_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23 Mounting: SMD Collector current: 0.15A Power dissipation: 0.5W Collector-emitter voltage: 500V Frequency: 50MHz Polarisation: bipolar Case: SOT23 Type of transistor: NPN Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Type of transistor: NPN Case: SOT23 Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar |
auf Bestellung 3093 Stücke: Lieferzeit 14-21 Tag (e) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Type of transistor: NPN Case: SOT23 Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3093 Stücke: Lieferzeit 7-14 Tag (e) |
|
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| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PCDF0465G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PCDF0665G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 50µA Max. forward voltage: 1.8V Max. load current: 24A Max. forward impulse current: 0.32kA Power dissipation: 70.8W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PCDF0665G3_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: Ammo Pack Max. forward voltage: 1.5V Power dissipation: 70.8W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PCDF0865G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 0.48kA Power dissipation: 78.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.4V Max. load current: 48A Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| P6SMBJ24A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ28A-AU_R2_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ28A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 385+ | 0.19 EUR |
| 527+ | 0.14 EUR |
| 625+ | 0.11 EUR |
| 1600+ | 0.1 EUR |
| 2400+ | 0.099 EUR |
| P6SMBJ28A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 385+ | 0.19 EUR |
| 527+ | 0.14 EUR |
| 625+ | 0.11 EUR |
| P6SMBJ28CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 374+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 800+ | 0.14 EUR |
| P6SMBJ28CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 374+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 800+ | 0.14 EUR |
| P6SMBJ28CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ30A-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ30A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 365 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 365+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 800+ | 0.1 EUR |
| 1600+ | 0.093 EUR |
| P6SMBJ30A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 365+ | 0.2 EUR |
| P6SMBJ30CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ30CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ33A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ33A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 850 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 281+ | 0.25 EUR |
| 400+ | 0.18 EUR |
| 521+ | 0.14 EUR |
| 800+ | 0.13 EUR |
| 1600+ | 0.11 EUR |
| 2400+ | 0.1 EUR |
| P6SMBJ33A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 281+ | 0.25 EUR |
| 400+ | 0.18 EUR |
| 521+ | 0.14 EUR |
| 800+ | 0.13 EUR |
| P6SMBJ33CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 248+ | 0.29 EUR |
| 355+ | 0.2 EUR |
| 500+ | 0.16 EUR |
| P6SMBJ33CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 968 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 248+ | 0.29 EUR |
| 355+ | 0.2 EUR |
| 500+ | 0.16 EUR |
| P6SMBJ33CA_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ36A-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ36A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ36CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ36CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 272+ | 0.26 EUR |
| 375+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 800+ | 0.12 EUR |
| 1600+ | 0.11 EUR |
| P6SMBJ36CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 272+ | 0.26 EUR |
| 375+ | 0.19 EUR |
| P6SMBJ40CA_R2_00001 |
Hersteller: PanJit Semiconductor
P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
auf Bestellung 5987 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 172+ | 0.42 EUR |
| 596+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| P6SMBJ48A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ48CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ48CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ5.0A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 285+ | 0.25 EUR |
| 414+ | 0.17 EUR |
| 538+ | 0.13 EUR |
| 800+ | 0.12 EUR |
| 1600+ | 0.11 EUR |
| 2400+ | 0.1 EUR |
| P6SMBJ5.0A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 285+ | 0.25 EUR |
| 414+ | 0.17 EUR |
| 538+ | 0.13 EUR |
| 800+ | 0.12 EUR |
| P6SMBJ5.0CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 595 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 225+ | 0.32 EUR |
| 338+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 800+ | 0.15 EUR |
| 1600+ | 0.14 EUR |
| 2400+ | 0.13 EUR |
| P6SMBJ5.0CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 225+ | 0.32 EUR |
| 338+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| P6SMBJ58A-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ58A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ58CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ58CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ6.0A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 520 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 300+ | 0.24 EUR |
| 428+ | 0.17 EUR |
| 520+ | 0.14 EUR |
| 800+ | 0.12 EUR |
| 1600+ | 0.11 EUR |
| 2400+ | 0.099 EUR |
| P6SMBJ6.0A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 300+ | 0.24 EUR |
| 428+ | 0.17 EUR |
| 520+ | 0.14 EUR |
| P6SMBJ60CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ60CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ64A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ64A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ7.0CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ7.5CA_R1_00001 |
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Hersteller: PanJit Semiconductor
P6SMBJ7.5CA-R1 Bidirectional TVS SMD diodes
P6SMBJ7.5CA-R1 Bidirectional TVS SMD diodes
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 151+ | 0.48 EUR |
| 430+ | 0.17 EUR |
| 4000+ | 0.12 EUR |
| P6SMBJ75A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ78A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ85CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ90A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ90CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBHV8050SA_R1_00501 |
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 500V
Frequency: 50MHz
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 500V
Frequency: 50MHz
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBHV8110DA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 3093 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 374+ | 0.19 EUR |
| 637+ | 0.11 EUR |
| 893+ | 0.08 EUR |
| 1000+ | 0.073 EUR |
| PBHV8110DA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3093 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 374+ | 0.19 EUR |
| 637+ | 0.11 EUR |
| 893+ | 0.08 EUR |
| 1000+ | 0.073 EUR |
| PCDB1065G1_R2_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDF0465G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDF0665G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDF0665G3_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: Ammo Pack
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: Ammo Pack
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDF0865G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDH2065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.71 EUR |
| 14+ | 5.15 EUR |
| 30+ | 4.55 EUR |
| 150+ | 4.46 EUR |
| PCDH2065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.71 EUR |
| 14+ | 5.15 EUR |
| 30+ | 4.55 EUR |
| PCDH2065CCGB_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCDH2065CCGC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
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