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PJC138K-AU_R1_000A1 PJC138K-AU_R1_000A1 PanJit Semiconductor PJC138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 236mW
Polarisation: unipolar
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1205+ 0.059 EUR
1275+ 0.056 EUR
Mindestbestellmenge: 725
PJC138K-AU_R1_000A1 PJC138K-AU_R1_000A1 PanJit Semiconductor PJC138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 236mW
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
725+0.099 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1205+ 0.059 EUR
1275+ 0.056 EUR
9000+ 0.054 EUR
Mindestbestellmenge: 725
PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.11Ω
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.11Ω
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -6A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2390 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -6A
auf Bestellung 2390 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
570+ 0.13 EUR
625+ 0.11 EUR
760+ 0.094 EUR
810+ 0.089 EUR
9000+ 0.086 EUR
Mindestbestellmenge: 365
PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: SOT323
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
570+ 0.13 EUR
625+ 0.11 EUR
760+ 0.094 EUR
810+ 0.089 EUR
Mindestbestellmenge: 365
PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Mounting: SMD
Case: SOT323
Drain-source voltage: -20V
Drain current: -1.3A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2985 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
795+ 0.09 EUR
835+ 0.086 EUR
9000+ 0.082 EUR
Mindestbestellmenge: 365
PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Mounting: SMD
Case: SOT323
Drain-source voltage: -20V
Drain current: -1.3A
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
795+ 0.09 EUR
835+ 0.086 EUR
Mindestbestellmenge: 365
PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
Mindestbestellmenge: 715
PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 715
PJC7476_R1_00001 PanJit Semiconductor PJC7476.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7476_R1_00001 PanJit Semiconductor PJC7476.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1 PanJit Semiconductor PJD15P06A-AU_SERIES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1 PanJit Semiconductor PJD15P06A-AU_SERIES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD16P06A_L2_00001 PanJit Semiconductor PJD16P06A.pdf PJD16P06A-L2 SMD P channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
95+0.76 EUR
200+ 0.36 EUR
212+ 0.34 EUR
12000+ 0.32 EUR
Mindestbestellmenge: 95
PJD18N20_L2_00001 PJD18N20_L2_00001 PanJit Semiconductor PJx18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD18N20_L2_00001 PJD18N20_L2_00001 PanJit Semiconductor PJx18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N03_L2_00001 PanJit Semiconductor PJD25N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 70
PJD25N03_L2_00001 PanJit Semiconductor PJD25N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
Mindestbestellmenge: 70
PJD25N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2905 Stücke:
Lieferzeit 7-14 Tag (e)
73+0.99 EUR
148+ 0.49 EUR
242+ 0.3 EUR
296+ 0.24 EUR
313+ 0.23 EUR
3000+ 0.22 EUR
Mindestbestellmenge: 73
PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2905 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
148+ 0.49 EUR
242+ 0.3 EUR
296+ 0.24 EUR
313+ 0.23 EUR
Mindestbestellmenge: 73
PJD35P03_L2_00001 PanJit Semiconductor PJD35P03-L2 SMD P channel transistors
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
296+ 0.24 EUR
315+ 0.23 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 70
PJD40P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD40P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
6000+ 0.31 EUR
Mindestbestellmenge: 69
PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
Mindestbestellmenge: 69
PJD45P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD45P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45P04_L2_00001 PanJit Semiconductor PJD45P04.pdf PJD45P04-L2 SMD P channel transistors
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD55N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD55P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD60P04E-AU_L2_006A1 PanJit Semiconductor PJD60P04E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD60P04E-AU_L2_006A1 PanJit Semiconductor PJD60P04E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD70P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD70P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD75P04E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD75P04E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD90P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD90P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJDLC05_R1_00001 PanJit Semiconductor PJDLC05-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJE138K_R1_00001 PJE138K_R1_00001 PanJit Semiconductor PJE138K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 223mW
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3850 Stücke:
Lieferzeit 7-14 Tag (e)
725+0.099 EUR
800+ 0.09 EUR
970+ 0.074 EUR
1025+ 0.07 EUR
4000+ 0.067 EUR
Mindestbestellmenge: 725
PJE138K_R1_00001 PJE138K_R1_00001 PanJit Semiconductor PJE138K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 223mW
Polarisation: unipolar
auf Bestellung 3850 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
800+ 0.09 EUR
970+ 0.074 EUR
1025+ 0.07 EUR
Mindestbestellmenge: 725
PJE5V0U8TB-AU_R1_000A1 PJE5V0U8TB-AU_R1_000A1 PanJit Semiconductor Category: Transil diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Application: automotive industry
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
162+ 0.44 EUR
211+ 0.34 EUR
264+ 0.27 EUR
695+ 0.1 EUR
736+ 0.097 EUR
Mindestbestellmenge: 132
PJE5V0U8TB-AU_R1_000A1 PJE5V0U8TB-AU_R1_000A1 PanJit Semiconductor Category: Transil diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20000 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
162+ 0.44 EUR
211+ 0.34 EUR
264+ 0.27 EUR
695+ 0.1 EUR
736+ 0.097 EUR
Mindestbestellmenge: 132
PJE8402_R1_00001 PanJit Semiconductor PJE8402.pdf PJE8402-R1 SMD N channel transistors
Produkt ist nicht verfügbar
PJE8403_R1_00001 PJE8403_R1_00001 PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3995 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
4000+ 0.089 EUR
Mindestbestellmenge: 360
PJE8403_R1_00001 PJE8403_R1_00001 PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
auf Bestellung 3995 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJE8408_R1_00001 PJE8408_R1_00001 PanJit Semiconductor PJE8408.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1A
Case: SOT523
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3980 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
4000+ 0.089 EUR
Mindestbestellmenge: 360
PJE8408_R1_00001 PJE8408_R1_00001 PanJit Semiconductor PJE8408.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1A
Case: SOT523
auf Bestellung 3980 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 360
PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU_R1_000A1 PanJit Semiconductor PJEC2415VM1WS-AU Category: Transil diodes - arrays
Description: Diode: TVS array; 17.1÷30.3V; 160W; asymmetric,bidirectional
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Breakdown voltage: 17.1...30.3V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 160W
Case: SOD323
Capacitance: 17pF
Produkt ist nicht verfügbar
PJC138K-AU_R1_000A1 PJC138K-AU.pdf
PJC138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 236mW
Polarisation: unipolar
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1205+ 0.059 EUR
1275+ 0.056 EUR
Mindestbestellmenge: 725
PJC138K-AU_R1_000A1 PJC138K-AU.pdf
PJC138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.36A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 236mW
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1205+ 0.059 EUR
1275+ 0.056 EUR
9000+ 0.054 EUR
Mindestbestellmenge: 725
PJC7400_R1_00001 PJC7400.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.11Ω
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7400_R1_00001 PJC7400.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.11Ω
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -6A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2390 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -6A
auf Bestellung 2390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
570+ 0.13 EUR
625+ 0.11 EUR
760+ 0.094 EUR
810+ 0.089 EUR
9000+ 0.086 EUR
Mindestbestellmenge: 365
PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: SOT323
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
570+ 0.13 EUR
625+ 0.11 EUR
760+ 0.094 EUR
810+ 0.089 EUR
Mindestbestellmenge: 365
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Mounting: SMD
Case: SOT323
Drain-source voltage: -20V
Drain current: -1.3A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2985 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
795+ 0.09 EUR
835+ 0.086 EUR
9000+ 0.082 EUR
Mindestbestellmenge: 365
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Mounting: SMD
Case: SOT323
Drain-source voltage: -20V
Drain current: -1.3A
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
795+ 0.09 EUR
835+ 0.086 EUR
Mindestbestellmenge: 365
PJC7428_R1_00001 PJC7428.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7428_R1_00001 PJC7428.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
Mindestbestellmenge: 715
PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 715
PJC7476_R1_00001 PJC7476.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7476_R1_00001 PJC7476.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1 PJD15P06A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1 PJD15P06A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD16P06A_L2_00001 PJD16P06A.pdf
Hersteller: PanJit Semiconductor
PJD16P06A-L2 SMD P channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
95+0.76 EUR
200+ 0.36 EUR
212+ 0.34 EUR
12000+ 0.32 EUR
Mindestbestellmenge: 95
PJD18N20_L2_00001 PJx18N20.pdf
PJD18N20_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD18N20_L2_00001 PJx18N20.pdf
PJD18N20_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N03_L2_00001 PJD25N03.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 70
PJD25N03_L2_00001 PJD25N03.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
Mindestbestellmenge: 70
PJD25N04V-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N04V-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2905 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
73+0.99 EUR
148+ 0.49 EUR
242+ 0.3 EUR
296+ 0.24 EUR
313+ 0.23 EUR
3000+ 0.22 EUR
Mindestbestellmenge: 73
PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2905 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
73+0.99 EUR
148+ 0.49 EUR
242+ 0.3 EUR
296+ 0.24 EUR
313+ 0.23 EUR
Mindestbestellmenge: 73
PJD35P03_L2_00001
Hersteller: PanJit Semiconductor
PJD35P03-L2 SMD P channel transistors
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
296+ 0.24 EUR
315+ 0.23 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 70
PJD40P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD40P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45N06A_L2_00001 PJx45N06A.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
6000+ 0.31 EUR
Mindestbestellmenge: 69
PJD45N06A_L2_00001 PJx45N06A.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
Mindestbestellmenge: 69
PJD45P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD45P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45P04_L2_00001 PJD45P04.pdf
Hersteller: PanJit Semiconductor
PJD45P04-L2 SMD P channel transistors
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD55N04V-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55N04V-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD55P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD60P04E-AU_L2_006A1 PJD60P04E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD60P04E-AU_L2_006A1 PJD60P04E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD70P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD70P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD75P04E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD75P04E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD90P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD90P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJDLC05_R1_00001
Hersteller: PanJit Semiconductor
PJDLC05-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJE138K_R1_00001 PJE138K.pdf
PJE138K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 223mW
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3850 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
800+ 0.09 EUR
970+ 0.074 EUR
1025+ 0.07 EUR
4000+ 0.067 EUR
Mindestbestellmenge: 725
PJE138K_R1_00001 PJE138K.pdf
PJE138K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 223mW
Polarisation: unipolar
auf Bestellung 3850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
800+ 0.09 EUR
970+ 0.074 EUR
1025+ 0.07 EUR
Mindestbestellmenge: 725
PJE5V0U8TB-AU_R1_000A1
PJE5V0U8TB-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Application: automotive industry
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
162+ 0.44 EUR
211+ 0.34 EUR
264+ 0.27 EUR
695+ 0.1 EUR
736+ 0.097 EUR
Mindestbestellmenge: 132
PJE5V0U8TB-AU_R1_000A1
PJE5V0U8TB-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
162+ 0.44 EUR
211+ 0.34 EUR
264+ 0.27 EUR
695+ 0.1 EUR
736+ 0.097 EUR
Mindestbestellmenge: 132
PJE8402_R1_00001 PJE8402.pdf
Hersteller: PanJit Semiconductor
PJE8402-R1 SMD N channel transistors
Produkt ist nicht verfügbar
PJE8403_R1_00001 PJE8403.pdf
PJE8403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
4000+ 0.089 EUR
Mindestbestellmenge: 360
PJE8403_R1_00001 PJE8403.pdf
PJE8403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
auf Bestellung 3995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJE8408_R1_00001 PJE8408.pdf
PJE8408_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1A
Case: SOT523
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
4000+ 0.089 EUR
Mindestbestellmenge: 360
PJE8408_R1_00001 PJE8408.pdf
PJE8408_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1A
Case: SOT523
auf Bestellung 3980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 360
PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU
PJEC2415VM1WS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.1÷30.3V; 160W; asymmetric,bidirectional
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Breakdown voltage: 17.1...30.3V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 160W
Case: SOD323
Capacitance: 17pF
Produkt ist nicht verfügbar
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