Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (852) > Seite 10 nach 15
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PJA138K_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Case: SOT23 Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Drain current: 4.9A Gate-source voltage: ±12V Pulsed drain current: 19.6A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2675 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Case: SOT23 Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Drain current: 4.9A Gate-source voltage: ±12V Pulsed drain current: 19.6A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
auf Bestellung 2675 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1793 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1793 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3402_R1_00501 | PanJit Semiconductor | PJA3402-R1 SMD N channel transistors |
auf Bestellung 9015 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3403_R1_00001 | PanJit Semiconductor |
PJA3403-R1 SMD P channel transistors |
auf Bestellung 2334 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3404_R1_00501 | PanJit Semiconductor | PJA3404-R1 SMD N channel transistors |
auf Bestellung 3904 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3405-AU_R1_000A1 | PanJit Semiconductor |
PJA3405-AU-R1 SMD P channel transistors |
auf Bestellung 2864 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3406_R1_00001 | PanJit Semiconductor |
PJA3406-R1 SMD N channel transistors |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2925 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3409_R1_00001 | PanJit Semiconductor |
PJA3409-R1 SMD P channel transistors |
auf Bestellung 2380 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3411-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -12.4A Drain current: -3.1A Gate charge: 5.4nC On-state resistance: 0.19Ω Power dissipation: 1.25W Gate-source voltage: ±12V Application: automotive industry |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3411-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -12.4A Drain current: -3.1A Gate charge: 5.4nC On-state resistance: 0.19Ω Power dissipation: 1.25W Gate-source voltage: ±12V Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3412-AU_R1_000A1 | PanJit Semiconductor |
PJA3412-AU-R1 SMD N channel transistors |
auf Bestellung 2136 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3412_R1_00501 | PanJit Semiconductor | PJA3412-R1 SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3413_R1_00001 | PanJit Semiconductor |
PJA3413-R1 SMD P channel transistors |
auf Bestellung 2370 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
PJA3415A-AU-R1 SMD P channel transistors |
auf Bestellung 2840 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3416AE_R1_00001 | PanJit Semiconductor |
PJA3416AE-R1 SMD N channel transistors |
auf Bestellung 2460 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3428_R1_00001 | PanJit Semiconductor |
PJA3428-R1 SMD N channel transistors |
auf Bestellung 7390 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Gate-source voltage: ±8V Pulsed drain current: 8A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2565 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Gate-source voltage: ±8V Pulsed drain current: 8A Kind of channel: enhancement |
auf Bestellung 2565 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Gate-source voltage: ±8V Pulsed drain current: 6.4A Application: automotive industry Kind of channel: enhancement |
auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Gate-source voltage: ±8V Pulsed drain current: 6.4A Application: automotive industry Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1770 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Pulsed drain current: -4.4A Application: automotive industry Kind of channel: enhancement |
auf Bestellung 1455 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Pulsed drain current: -4.4A Application: automotive industry Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1455 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Pulsed drain current: -4.4A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7014 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Pulsed drain current: -4.4A Kind of channel: enhancement |
auf Bestellung 7014 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Drain current: 0.75A Pulsed drain current: 1.5A Gate-source voltage: ±10V Drain-source voltage: 20V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3820 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Drain current: 0.75A Pulsed drain current: 1.5A Gate-source voltage: ±10V Drain-source voltage: 20V Polarisation: unipolar |
auf Bestellung 3820 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.5A Gate charge: 1.4nC On-state resistance: 6Ω Power dissipation: 0.5W Gate-source voltage: ±10V Pulsed drain current: -1A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5960 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.5A Gate charge: 1.4nC On-state resistance: 6Ω Power dissipation: 0.5W Gate-source voltage: ±10V Pulsed drain current: -1A Kind of channel: enhancement |
auf Bestellung 5960 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Gate-source voltage: ±12V Pulsed drain current: 4.8A Application: automotive industry Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Gate-source voltage: ±12V Pulsed drain current: 4.8A Application: automotive industry Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.5W Gate-source voltage: ±20V Pulsed drain current: 1.2A Application: automotive industry Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.5W Gate-source voltage: ±20V Pulsed drain current: 1.2A Application: automotive industry Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.3A Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.5W Gate-source voltage: ±20V Pulsed drain current: -1A Application: automotive industry Kind of channel: enhancement |
auf Bestellung 1487 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.3A Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.5W Gate-source voltage: ±20V Pulsed drain current: -1A Application: automotive industry Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1487 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3440-AU_R1_000A1 | PanJit Semiconductor |
PJA3440-AU-R1 SMD N channel transistors |
auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3441-AU_R1_000A1 | PanJit Semiconductor |
PJA3441-AU-R1 SMD P channel transistors |
auf Bestellung 2725 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3441_R1_00501 | PanJit Semiconductor | PJA3441-R1 SMD P channel transistors |
auf Bestellung 1863 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3460-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 1013 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3460-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1013 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3460_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3485 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3460_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3485 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA3463_R1_00001 | PanJit Semiconductor |
PJA3463-R1 SMD P channel transistors |
auf Bestellung 845 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJA3471_R1_00501 | PanJit Semiconductor | PJA3471-R1 SMD P channel transistors |
auf Bestellung 12065 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJC138K-AU_R1_000A1 | PanJit Semiconductor |
PJC138K-AU-R1 SMD N channel transistors |
auf Bestellung 2059 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJC7400_R1_00001 | PanJit Semiconductor |
PJC7400-R1 SMD N channel transistors |
auf Bestellung 5455 Stücke: Lieferzeit 7-14 Tag (e) |
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PJC7401_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1315 Stücke: Lieferzeit 7-14 Tag (e) |
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PJC7401_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1315 Stücke: Lieferzeit 14-21 Tag (e) |
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PJC7404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Case: SOT323 Kind of channel: enhancement Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1A Gate charge: 1.6nC On-state resistance: 0.4Ω Power dissipation: 0.35W Pulsed drain current: 4A Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5990 Stücke: Lieferzeit 7-14 Tag (e) |
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PJC7404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Case: SOT323 Kind of channel: enhancement Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1A Gate charge: 1.6nC On-state resistance: 0.4Ω Power dissipation: 0.35W Pulsed drain current: 4A Gate-source voltage: ±8V |
auf Bestellung 5990 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJC7407_R1_00001 | PanJit Semiconductor |
PJC7407-R1 SMD P channel transistors |
auf Bestellung 7545 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJC7428_R1_00001 | PanJit Semiconductor |
PJC7428-R1 SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -250mA Gate charge: 1.1nC Power dissipation: 0.35W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT323 Application: automotive industry |
auf Bestellung 2875 Stücke: Lieferzeit 14-21 Tag (e) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -250mA Gate charge: 1.1nC Power dissipation: 0.35W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT323 Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2875 Stücke: Lieferzeit 7-14 Tag (e) |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJA138K_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PJA3400_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2675 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 241+ | 0.3 EUR |
| 379+ | 0.19 EUR |
| 517+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.098 EUR |
| 6000+ | 0.087 EUR |
| PJA3400_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 241+ | 0.3 EUR |
| 379+ | 0.19 EUR |
| 517+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| PJA3401A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1793 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 353+ | 0.2 EUR |
| 558+ | 0.13 EUR |
| 755+ | 0.095 EUR |
| 1000+ | 0.084 EUR |
| 3000+ | 0.075 EUR |
| PJA3401A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1793 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 353+ | 0.2 EUR |
| 558+ | 0.13 EUR |
| 755+ | 0.095 EUR |
| 1000+ | 0.084 EUR |
| PJA3402_R1_00501 |
Hersteller: PanJit Semiconductor
PJA3402-R1 SMD N channel transistors
PJA3402-R1 SMD N channel transistors
auf Bestellung 9015 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 1073+ | 0.067 EUR |
| 1134+ | 0.063 EUR |
| PJA3403_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3403-R1 SMD P channel transistors
PJA3403-R1 SMD P channel transistors
auf Bestellung 2334 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 211+ | 0.34 EUR |
| 1080+ | 0.066 EUR |
| 1145+ | 0.062 EUR |
| PJA3404_R1_00501 |
Hersteller: PanJit Semiconductor
PJA3404-R1 SMD N channel transistors
PJA3404-R1 SMD N channel transistors
auf Bestellung 3904 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 944+ | 0.076 EUR |
| 1000+ | 0.072 EUR |
| PJA3405-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA3405-AU-R1 SMD P channel transistors
PJA3405-AU-R1 SMD P channel transistors
auf Bestellung 2864 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 834+ | 0.086 EUR |
| 878+ | 0.082 EUR |
| PJA3406_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3406-R1 SMD N channel transistors
PJA3406-R1 SMD N channel transistors
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 207+ | 0.35 EUR |
| 933+ | 0.077 EUR |
| 987+ | 0.073 EUR |
| 9000+ | 0.072 EUR |
| PJA3407_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 226+ | 0.32 EUR |
| 363+ | 0.2 EUR |
| 807+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| 75000+ | 0.082 EUR |
| PJA3407_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 226+ | 0.32 EUR |
| 363+ | 0.2 EUR |
| 807+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| PJA3409_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3409-R1 SMD P channel transistors
PJA3409-R1 SMD P channel transistors
auf Bestellung 2380 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 855+ | 0.084 EUR |
| 903+ | 0.079 EUR |
| PJA3411-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12.4A
Drain current: -3.1A
Gate charge: 5.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12.4A
Drain current: -3.1A
Gate charge: 5.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 388+ | 0.18 EUR |
| 562+ | 0.13 EUR |
| 951+ | 0.075 EUR |
| 1007+ | 0.071 EUR |
| PJA3411-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12.4A
Drain current: -3.1A
Gate charge: 5.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12.4A
Drain current: -3.1A
Gate charge: 5.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 388+ | 0.18 EUR |
| 562+ | 0.13 EUR |
| 951+ | 0.075 EUR |
| 1007+ | 0.071 EUR |
| 75000+ | 0.068 EUR |
| PJA3412-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA3412-AU-R1 SMD N channel transistors
PJA3412-AU-R1 SMD N channel transistors
auf Bestellung 2136 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 177+ | 0.41 EUR |
| 873+ | 0.082 EUR |
| 923+ | 0.078 EUR |
| 9000+ | 0.075 EUR |
| PJA3412_R1_00501 |
Hersteller: PanJit Semiconductor
PJA3412-R1 SMD N channel transistors
PJA3412-R1 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 1323+ | 0.054 EUR |
| 1401+ | 0.051 EUR |
| PJA3413_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3413-R1 SMD P channel transistors
PJA3413-R1 SMD P channel transistors
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 155+ | 0.46 EUR |
| 1356+ | 0.053 EUR |
| 1433+ | 0.05 EUR |
| PJA3415A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA3415A-AU-R1 SMD P channel transistors
PJA3415A-AU-R1 SMD P channel transistors
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 633+ | 0.11 EUR |
| PJA3416AE_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3416AE-R1 SMD N channel transistors
PJA3416AE-R1 SMD N channel transistors
auf Bestellung 2460 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 146+ | 0.49 EUR |
| 802+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| 9000+ | 0.083 EUR |
| PJA3428_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3428-R1 SMD N channel transistors
PJA3428-R1 SMD N channel transistors
auf Bestellung 7390 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 185+ | 0.39 EUR |
| 1254+ | 0.057 EUR |
| 1327+ | 0.054 EUR |
| 75000+ | 0.052 EUR |
| PJA3430_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: 8A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: 8A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2565 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 385+ | 0.19 EUR |
| 615+ | 0.12 EUR |
| 989+ | 0.072 EUR |
| 1044+ | 0.068 EUR |
| 3000+ | 0.067 EUR |
| PJA3430_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: 8A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: 8A
Kind of channel: enhancement
auf Bestellung 2565 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 385+ | 0.19 EUR |
| 615+ | 0.12 EUR |
| 989+ | 0.072 EUR |
| 1044+ | 0.068 EUR |
| PJA3432-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 400+ | 0.18 EUR |
| 637+ | 0.11 EUR |
| 858+ | 0.083 EUR |
| 881+ | 0.081 EUR |
| 908+ | 0.079 EUR |
| 1000+ | 0.076 EUR |
| PJA3432-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1770 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 400+ | 0.18 EUR |
| 637+ | 0.11 EUR |
| 858+ | 0.083 EUR |
| 881+ | 0.081 EUR |
| 908+ | 0.079 EUR |
| 1000+ | 0.076 EUR |
| PJA3433-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 400+ | 0.18 EUR |
| 633+ | 0.11 EUR |
| 782+ | 0.092 EUR |
| 848+ | 0.084 EUR |
| 863+ | 0.083 EUR |
| PJA3433-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1455 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 400+ | 0.18 EUR |
| 633+ | 0.11 EUR |
| 782+ | 0.092 EUR |
| 848+ | 0.084 EUR |
| 863+ | 0.083 EUR |
| PJA3433_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7014 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 343+ | 0.21 EUR |
| 565+ | 0.13 EUR |
| 854+ | 0.084 EUR |
| 903+ | 0.079 EUR |
| 3000+ | 0.077 EUR |
| PJA3433_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Kind of channel: enhancement
auf Bestellung 7014 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 343+ | 0.21 EUR |
| 565+ | 0.13 EUR |
| 854+ | 0.084 EUR |
| 903+ | 0.079 EUR |
| 3000+ | 0.077 EUR |
| PJA3434_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3820 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 368+ | 0.19 EUR |
| 579+ | 0.12 EUR |
| 1083+ | 0.066 EUR |
| 1147+ | 0.062 EUR |
| 6000+ | 0.06 EUR |
| PJA3434_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
auf Bestellung 3820 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 368+ | 0.19 EUR |
| 579+ | 0.12 EUR |
| 1083+ | 0.066 EUR |
| 1147+ | 0.062 EUR |
| PJA3435_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Pulsed drain current: -1A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Pulsed drain current: -1A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5960 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 300+ | 0.24 EUR |
| 463+ | 0.15 EUR |
| 989+ | 0.072 EUR |
| 1047+ | 0.068 EUR |
| 24000+ | 0.066 EUR |
| PJA3435_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Pulsed drain current: -1A
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Pulsed drain current: -1A
Kind of channel: enhancement
auf Bestellung 5960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 300+ | 0.24 EUR |
| 463+ | 0.15 EUR |
| 989+ | 0.072 EUR |
| 1047+ | 0.068 EUR |
| PJA3436-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 313+ | 0.23 EUR |
| 507+ | 0.14 EUR |
| 951+ | 0.075 EUR |
| 1007+ | 0.071 EUR |
| PJA3436-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 313+ | 0.23 EUR |
| 507+ | 0.14 EUR |
| 951+ | 0.075 EUR |
| 1007+ | 0.071 EUR |
| 6000+ | 0.069 EUR |
| 9000+ | 0.068 EUR |
| PJA3438-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 254+ | 0.28 EUR |
| 407+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| PJA3438-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 254+ | 0.28 EUR |
| 407+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 644+ | 0.11 EUR |
| 15000+ | 0.068 EUR |
| 21000+ | 0.065 EUR |
| PJA3439-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: -1A
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: -1A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 1487 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 252+ | 0.28 EUR |
| 415+ | 0.17 EUR |
| 926+ | 0.077 EUR |
| 981+ | 0.073 EUR |
| PJA3439-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: -1A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: -1A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1487 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 252+ | 0.28 EUR |
| 415+ | 0.17 EUR |
| 926+ | 0.077 EUR |
| 981+ | 0.073 EUR |
| 24000+ | 0.071 EUR |
| PJA3440-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA3440-AU-R1 SMD N channel transistors
PJA3440-AU-R1 SMD N channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 0.61 EUR |
| 562+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| PJA3441-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJA3441-AU-R1 SMD P channel transistors
PJA3441-AU-R1 SMD P channel transistors
auf Bestellung 2725 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 658+ | 0.11 EUR |
| 695+ | 0.1 EUR |
| PJA3441_R1_00501 |
Hersteller: PanJit Semiconductor
PJA3441-R1 SMD P channel transistors
PJA3441-R1 SMD P channel transistors
auf Bestellung 1863 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.48 EUR |
| 770+ | 0.093 EUR |
| 820+ | 0.087 EUR |
| PJA3460-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 257+ | 0.28 EUR |
| 633+ | 0.11 EUR |
| PJA3460-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1013 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 257+ | 0.28 EUR |
| 633+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| PJA3460_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3485 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 281+ | 0.25 EUR |
| 486+ | 0.15 EUR |
| 642+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| PJA3460_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3485 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 281+ | 0.25 EUR |
| 486+ | 0.15 EUR |
| 642+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| PJA3463_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3463-R1 SMD P channel transistors
PJA3463-R1 SMD P channel transistors
auf Bestellung 845 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 127+ | 0.56 EUR |
| 527+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| PJA3471_R1_00501 |
Hersteller: PanJit Semiconductor
PJA3471-R1 SMD P channel transistors
PJA3471-R1 SMD P channel transistors
auf Bestellung 12065 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 145+ | 0.5 EUR |
| 544+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| PJC138K-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
PJC138K-AU-R1 SMD N channel transistors
PJC138K-AU-R1 SMD N channel transistors
auf Bestellung 2059 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 182+ | 0.39 EUR |
| 1183+ | 0.06 EUR |
| 1250+ | 0.057 EUR |
| 75000+ | 0.055 EUR |
| PJC7400_R1_00001 |
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Hersteller: PanJit Semiconductor
PJC7400-R1 SMD N channel transistors
PJC7400-R1 SMD N channel transistors
auf Bestellung 5455 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 161+ | 0.44 EUR |
| 596+ | 0.12 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| PJC7401_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1315 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 211+ | 0.34 EUR |
| 329+ | 0.22 EUR |
| 705+ | 0.1 EUR |
| 747+ | 0.096 EUR |
| PJC7401_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1315 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 211+ | 0.34 EUR |
| 329+ | 0.22 EUR |
| 705+ | 0.1 EUR |
| 747+ | 0.096 EUR |
| PJC7404_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 230+ | 0.31 EUR |
| 360+ | 0.2 EUR |
| 758+ | 0.094 EUR |
| 807+ | 0.089 EUR |
| 9000+ | 0.086 EUR |
| PJC7404_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
auf Bestellung 5990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 230+ | 0.31 EUR |
| 360+ | 0.2 EUR |
| 758+ | 0.094 EUR |
| 807+ | 0.089 EUR |
| PJC7407_R1_00001 |
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Hersteller: PanJit Semiconductor
PJC7407-R1 SMD P channel transistors
PJC7407-R1 SMD P channel transistors
auf Bestellung 7545 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 165+ | 0.43 EUR |
| 770+ | 0.093 EUR |
| 820+ | 0.087 EUR |
| PJC7428_R1_00001 |
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Hersteller: PanJit Semiconductor
PJC7428-R1 SMD N channel transistors
PJC7428-R1 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 253+ | 0.28 EUR |
| 900+ | 0.08 EUR |
| 951+ | 0.075 EUR |
| PJC7439-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -250mA
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -250mA
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 417+ | 0.17 EUR |
| 676+ | 0.11 EUR |
| 1356+ | 0.053 EUR |
| 1433+ | 0.05 EUR |
| PJC7439-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -250mA
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -250mA
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 417+ | 0.17 EUR |
| 676+ | 0.11 EUR |
| 1356+ | 0.053 EUR |
| 1433+ | 0.05 EUR |
| 6000+ | 0.049 EUR |
| 9000+ | 0.048 EUR |
| PJC7476_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 204+ | 0.35 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| PJC7476_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 204+ | 0.35 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 685+ | 0.1 EUR |


