Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1093) > Seite 12 nach 19
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| P6KE220A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 209÷231V; 1.9A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 185V Breakdown voltage: 209...231V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
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| P6KE24CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; 0.6kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 20.5V Breakdown voltage: 22.8...25.2V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Manufacturer series: P6KE Max. forward impulse current: 18A Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| P6KE250A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; unidirectional; DO15; P6KE Type of diode: TVS Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
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| P6KE250A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; unidirectional; DO15; P6KE Type of diode: TVS Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
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| P6KE27CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| P6KE27CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| P6KE30A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; unidirectional; DO15; P6KE Type of diode: TVS Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
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| P6KE30A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; unidirectional; DO15; P6KE Type of diode: TVS Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
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| P6KE39CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; bidirectional; DO15; P6KE Type of diode: TVS Semiconductor structure: bidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
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| P6KE43A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; unidirectional; DO15; P6KE Type of diode: TVS Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
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| P6KE56CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 47.8V Breakdown voltage: 53.2...58.8V Max. forward impulse current: 7.8A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| P6SMB12A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Application: automotive industry Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| P6SMB16CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Breakdown voltage: 15.2...16.8V Max. forward impulse current: 27A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Kind of package: reel; tape Application: automotive industry Semiconductor structure: bidirectional Case: SMB Features of semiconductor devices: glass passivated Type of diode: TVS Leakage current: 1µA |
Produkt ist nicht verfügbar |
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| P6SMB16CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Breakdown voltage: 15.2...16.8V Max. forward impulse current: 27A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Kind of package: reel; tape Semiconductor structure: bidirectional Case: SMB Features of semiconductor devices: glass passivated Type of diode: TVS Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMB27A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 27V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMB30A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMB30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMB30CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Features of semiconductor devices: glass passivated Leakage current: 1µA Max. forward impulse current: 14.4A Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Peak pulse power dissipation: 0.6kW Manufacturer series: P6SMB Application: automotive industry |
auf Bestellung 835 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB30CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Features of semiconductor devices: glass passivated Leakage current: 1µA Max. forward impulse current: 14.4A Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Peak pulse power dissipation: 0.6kW Manufacturer series: P6SMB Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 835 Stücke: Lieferzeit 7-14 Tag (e) |
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| P6SMB30CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMB36CA-AU_R1_000A1 | PanJit Semiconductor |
P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes |
auf Bestellung 203 Stücke: Lieferzeit 7-14 Tag (e) |
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| P6SMBJ10CA_R1_00001 | PanJit Semiconductor |
P6SMBJ10CA-R1 Bidirectional TVS SMD diodes |
auf Bestellung 760 Stücke: Lieferzeit 7-14 Tag (e) |
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| P6SMBJ13A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 27.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ13A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 27.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ14CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ14CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ150CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 150V Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ15A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ15A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ15CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 565 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ15CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
auf Bestellung 565 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ16A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ16A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ170A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 189÷209V; 2.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ170CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 189÷209V; 2.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ18A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ200A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 200V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ200CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 220÷247V; 1.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 200V Breakdown voltage: 220...247V Max. forward impulse current: 1.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ220A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 242÷272V; 1.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 220V Breakdown voltage: 242...272V Max. forward impulse current: 1.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| P6SMBJ22A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...27V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
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| P6SMBJ24A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ24A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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P6SMBJ26CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P6SMBJ26CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P6SMBJ28A_R1_00001 | PanJit Semiconductor |
P6SMBJ28A-R1 Unidirectional TVS SMD diodes |
auf Bestellung 785 Stücke: Lieferzeit 7-14 Tag (e) |
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| P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
P6SMBJ28CA-AU-R1 Bidirectional TVS SMD diodes |
auf Bestellung 1600 Stücke: Lieferzeit 7-14 Tag (e) |
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| P6SMBJ30A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 365 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ33A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 850 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
P6SMBJ33CA-AU-R1 Bidirectional TVS SMD diodes |
auf Bestellung 968 Stücke: Lieferzeit 7-14 Tag (e) |
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| P6SMBJ36CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 365 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMBJ40CA_R2_00001 | PanJit Semiconductor | P6SMBJ40CA-R2 Bidirectional TVS SMD diodes |
auf Bestellung 5987 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Case: SMB Mounting: SMD Max. off-state voltage: 5V Semiconductor structure: unidirectional Leakage current: 0.8mA Max. forward impulse current: 65.2A Kind of package: reel; tape Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated Breakdown voltage: 6.4...7.07V Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 865 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Case: SMB Mounting: SMD Max. off-state voltage: 5V Semiconductor structure: unidirectional Leakage current: 0.8mA Max. forward impulse current: 65.2A Kind of package: reel; tape Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated Breakdown voltage: 6.4...7.07V Manufacturer series: P6SMBJ |
auf Bestellung 865 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6KE220A_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 209÷231V; 1.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 185V
Breakdown voltage: 209...231V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 209÷231V; 1.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 185V
Breakdown voltage: 209...231V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE24CA_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 18A
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 18A
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE250A_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE250A_R2_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE27CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE27CA_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE30A_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE30A_R2_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE39CA_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; bidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; bidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE43A_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE56CA_R2_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 7.8A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 7.8A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB12A-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB16CA-AU_R2_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: bidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: bidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB16CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB27A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 27V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 27V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB30A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB30A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB30CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 14.4A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 14.4A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Application: automotive industry
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 296+ | 0.24 EUR |
| 391+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 800+ | 0.15 EUR |
| P6SMB30CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 14.4A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 14.4A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 296+ | 0.24 EUR |
| 391+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 800+ | 0.15 EUR |
| P6SMB30CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB36CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes
P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes
auf Bestellung 203 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.76 EUR |
| 203+ | 0.36 EUR |
| 294+ | 0.24 EUR |
| 20000+ | 0.14 EUR |
| P6SMBJ10CA_R1_00001 |
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Hersteller: PanJit Semiconductor
P6SMBJ10CA-R1 Bidirectional TVS SMD diodes
P6SMBJ10CA-R1 Bidirectional TVS SMD diodes
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 166+ | 0.43 EUR |
| 569+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| P6SMBJ13A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ13A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ14CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ14CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ150CA_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ15A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ15A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ15CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 565 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 315+ | 0.23 EUR |
| 432+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| 800+ | 0.12 EUR |
| 1600+ | 0.11 EUR |
| P6SMBJ15CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 315+ | 0.23 EUR |
| 432+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| P6SMBJ16A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ16A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ170A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ170CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ18A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ200A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ200CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 220÷247V; 1.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 220...247V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 220÷247V; 1.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 220...247V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ220A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 242÷272V; 1.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 242÷272V; 1.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ22A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ24A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ24A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ26CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ26CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ28A_R1_00001 |
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Hersteller: PanJit Semiconductor
P6SMBJ28A-R1 Unidirectional TVS SMD diodes
P6SMBJ28A-R1 Unidirectional TVS SMD diodes
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 201+ | 0.36 EUR |
| 705+ | 0.1 EUR |
| 747+ | 0.096 EUR |
| P6SMBJ28CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
P6SMBJ28CA-AU-R1 Bidirectional TVS SMD diodes
P6SMBJ28CA-AU-R1 Bidirectional TVS SMD diodes
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 266+ | 0.27 EUR |
| 451+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| 9600+ | 0.14 EUR |
| P6SMBJ30A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ30A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 365 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 365+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 800+ | 0.1 EUR |
| 1600+ | 0.093 EUR |
| P6SMBJ30A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 365+ | 0.2 EUR |
| P6SMBJ33A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ33A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 850 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 281+ | 0.25 EUR |
| 400+ | 0.18 EUR |
| 521+ | 0.14 EUR |
| 800+ | 0.13 EUR |
| 1600+ | 0.11 EUR |
| 2400+ | 0.1 EUR |
| P6SMBJ33A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 281+ | 0.25 EUR |
| 400+ | 0.18 EUR |
| 521+ | 0.14 EUR |
| 800+ | 0.13 EUR |
| P6SMBJ33CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
P6SMBJ33CA-AU-R1 Bidirectional TVS SMD diodes
P6SMBJ33CA-AU-R1 Bidirectional TVS SMD diodes
auf Bestellung 968 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 131+ | 0.55 EUR |
| 400+ | 0.18 EUR |
| 424+ | 0.17 EUR |
| 20000+ | 0.16 EUR |
| P6SMBJ36CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ36CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 365 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 272+ | 0.26 EUR |
| 365+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 800+ | 0.12 EUR |
| 1600+ | 0.11 EUR |
| P6SMBJ36CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 272+ | 0.26 EUR |
| 365+ | 0.2 EUR |
| P6SMBJ40CA_R2_00001 |
Hersteller: PanJit Semiconductor
P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
auf Bestellung 5987 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 172+ | 0.42 EUR |
| 596+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| P6SMBJ48A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ5.0A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 0.8mA
Max. forward impulse current: 65.2A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Breakdown voltage: 6.4...7.07V
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 0.8mA
Max. forward impulse current: 65.2A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Breakdown voltage: 6.4...7.07V
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 285+ | 0.25 EUR |
| 414+ | 0.17 EUR |
| 538+ | 0.13 EUR |
| 800+ | 0.12 EUR |
| 1600+ | 0.11 EUR |
| 2400+ | 0.1 EUR |
| P6SMBJ5.0A_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 0.8mA
Max. forward impulse current: 65.2A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Breakdown voltage: 6.4...7.07V
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 0.8mA
Max. forward impulse current: 65.2A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Breakdown voltage: 6.4...7.07V
Manufacturer series: P6SMBJ
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 285+ | 0.25 EUR |
| 414+ | 0.17 EUR |
| 538+ | 0.13 EUR |
| 800+ | 0.12 EUR |

