Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1214) > Seite 12 nach 21
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PCDE1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape Case: TO263 Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA Power dissipation: 102.7W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDE1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape Case: TO263 Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA Power dissipation: 102.7W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDE20120G1_R2_00001 | PanJit Semiconductor | PCDE20120G1-R2 SMD Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDF0465G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDF0465G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDF0665G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 50µA Max. forward voltage: 1.8V Max. load current: 24A Max. forward impulse current: 0.32kA Power dissipation: 70.8W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDF0665G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 50µA Max. forward voltage: 1.8V Max. load current: 24A Max. forward impulse current: 0.32kA Power dissipation: 70.8W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDF0865G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 0.48kA Power dissipation: 78.1W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDF0865G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 0.48kA Power dissipation: 78.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDF1065G1_T0_00601 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH20120CCG1_T0_00601 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH20120CCGB_T0_00601 | PanJit Semiconductor | PCDH20120CCGB-T0 THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Mounting: THT Max. off-state voltage: 650V Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Mounting: THT Max. off-state voltage: 650V Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Mounting: THT Max. off-state voltage: 650V Max. load current: 48A Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Mounting: THT Max. off-state voltage: 650V Max. load current: 48A Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Mounting: THT Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Mounting: THT Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH30120CCG1_T0_00601 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH30120CCGB_T0_00601 | PanJit Semiconductor | PCDH30120CCGB-T0 THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH3065CCG1_T0_00601 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH3065CCGB_T0_00601 | PanJit Semiconductor | PCDH3065CCGB-T0 THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH3065CCGC_T0_00601 | PanJit Semiconductor | PCDH3065CCGC-T0 THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH40120CCG1_T0_00601 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH40120CCGB_T0_00601 | PanJit Semiconductor | PCDH40120CCGB-T0 THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH4065CCG1_T0_00601 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH4065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W Kind of package: tube Semiconductor structure: common cathode; double Mounting: THT Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 0.1mA Max. forward voltage: 1.4V Load current: 20A x2 Max. load current: 84A Power dissipation: 253W Max. off-state voltage: 650V Max. forward impulse current: 1.04kA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH4065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W Kind of package: tube Semiconductor structure: common cathode; double Mounting: THT Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 0.1mA Max. forward voltage: 1.4V Load current: 20A x2 Max. load current: 84A Power dissipation: 253W Max. off-state voltage: 650V Max. forward impulse current: 1.04kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDH4065CCGC_T0_00601 | PanJit Semiconductor | PCDH4065CCGC-T0 THT Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDP0465G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDP05120G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDP0665G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDP08120G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDP0865G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PCDP10120G1_T0_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 76A Max. forward impulse current: 0.64kA Leakage current: 0.1mA Power dissipation: 151.5W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PCDP10120G1_T0_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 76A Max. forward impulse current: 0.64kA Leakage current: 0.1mA Power dissipation: 151.5W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PCDP1065G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PCDP1265G1_T0_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 80uA Case: TO220AC Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Leakage current: 80µA Power dissipation: 102.7W Max. forward voltage: 1.8V Load current: 12A Max. load current: 52A Max. forward impulse current: 0.64kA Max. off-state voltage: 650V Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PCDP1265G1_T0_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 80uA Case: TO220AC Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Leakage current: 80µA Power dissipation: 102.7W Max. forward voltage: 1.8V Load current: 12A Max. load current: 52A Max. forward impulse current: 0.64kA Max. off-state voltage: 650V Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 120A Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 120A Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PCDP1665G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDP20120G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCDP2065G1_T0_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry |
auf Bestellung 4990 Stücke: Lieferzeit 14-21 Tag (e) |
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4990 Stücke: Lieferzeit 7-14 Tag (e) |
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PE1403M1Q_R1_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6...9V Max. forward impulse current: 5A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5V Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.8pF Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8480 Stücke: Lieferzeit 7-14 Tag (e) |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6...9V Max. forward impulse current: 5A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5V Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.8pF Version: ESD |
auf Bestellung 8480 Stücke: Lieferzeit 14-21 Tag (e) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6...9V Max. forward impulse current: 5A Semiconductor structure: unidirectional Mounting: SMD Case: SOT363 Max. off-state voltage: 5V Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.8pF Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2980 Stücke: Lieferzeit 7-14 Tag (e) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6...9V Max. forward impulse current: 5A Semiconductor structure: unidirectional Mounting: SMD Case: SOT363 Max. off-state voltage: 5V Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.8pF Version: ESD |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape Type of diode: TVS array Max. off-state voltage: 5V Breakdown voltage: 6...7.5V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Version: ESD Capacitance: 120pF Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4200 Stücke: Lieferzeit 7-14 Tag (e) |
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PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape Type of diode: TVS array Max. off-state voltage: 5V Breakdown voltage: 6...7.5V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Version: ESD Capacitance: 120pF Leakage current: 1µA |
auf Bestellung 4200 Stücke: Lieferzeit 14-21 Tag (e) |
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PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD Capacitance: 0.6pF Mounting: SMD Type of diode: TVS Kind of package: reel; tape Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD Capacitance: 0.6pF Mounting: SMD Type of diode: TVS Kind of package: reel; tape Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD |
Produkt ist nicht verfügbar |
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PEC3202M1Q_R1_00201 | PanJit Semiconductor | PEC3202M1Q-R1 Bidirectional TVS SMD diodes |
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PEC3205M1Q_R1_00201 | PanJit Semiconductor |
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PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Case: SOT23 Version: ESD Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Capacitance: 30pF Leakage current: 50nA Max. off-state voltage: 24V Breakdown voltage: 26.2...30.3V Max. forward impulse current: 7A Application: automotive industry Semiconductor structure: bidirectional; double |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PCDE1065G1_R2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
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PCDE1065G1_R2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Produkt ist nicht verfügbar
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PCDE20120G1_R2_00001 |
Hersteller: PanJit Semiconductor
PCDE20120G1-R2 SMD Schottky diodes
PCDE20120G1-R2 SMD Schottky diodes
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PCDF0465G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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PCDF0465G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Produkt ist nicht verfügbar
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PCDF0665G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PCDF0665G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Produkt ist nicht verfügbar
Im Einkaufswagen
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PCDF0865G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PCDF0865G1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Produkt ist nicht verfügbar
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PCDF1065G1_T0_00601 |
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Hersteller: PanJit Semiconductor
PCDF1065G1-T0 THT Schottky diodes
PCDF1065G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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PCDH20120CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
PCDH20120CCG1-T0 THT Schottky diodes
PCDH20120CCG1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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PCDH20120CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH20120CCGB-T0 THT Schottky diodes
PCDH20120CCGB-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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PCDH2065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.38 EUR |
15+ | 4.9 EUR |
16+ | 4.63 EUR |
150+ | 4.56 EUR |
600+ | 4.46 EUR |
PCDH2065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.38 EUR |
15+ | 4.9 EUR |
16+ | 4.63 EUR |
PCDH2065CCGB_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PCDH2065CCGB_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Produkt ist nicht verfügbar
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PCDH2065CCGC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PCDH2065CCGC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Produkt ist nicht verfügbar
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PCDH30120CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
PCDH30120CCG1-T0 THT Schottky diodes
PCDH30120CCG1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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Stück im Wert von UAH
PCDH30120CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH30120CCGB-T0 THT Schottky diodes
PCDH30120CCGB-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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PCDH3065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
PCDH3065CCG1-T0 THT Schottky diodes
PCDH3065CCG1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDH3065CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH3065CCGB-T0 THT Schottky diodes
PCDH3065CCGB-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDH3065CCGC_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH3065CCGC-T0 THT Schottky diodes
PCDH3065CCGC-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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Stück im Wert von UAH
PCDH40120CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
PCDH40120CCG1-T0 THT Schottky diodes
PCDH40120CCG1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDH40120CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH40120CCGB-T0 THT Schottky diodes
PCDH40120CCGB-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
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PCDH4065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
PCDH4065CCG1-T0 THT Schottky diodes
PCDH4065CCG1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDH4065CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W
Kind of package: tube
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 0.1mA
Max. forward voltage: 1.4V
Load current: 20A x2
Max. load current: 84A
Power dissipation: 253W
Max. off-state voltage: 650V
Max. forward impulse current: 1.04kA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W
Kind of package: tube
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 0.1mA
Max. forward voltage: 1.4V
Load current: 20A x2
Max. load current: 84A
Power dissipation: 253W
Max. off-state voltage: 650V
Max. forward impulse current: 1.04kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDH4065CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W
Kind of package: tube
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 0.1mA
Max. forward voltage: 1.4V
Load current: 20A x2
Max. load current: 84A
Power dissipation: 253W
Max. off-state voltage: 650V
Max. forward impulse current: 1.04kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W
Kind of package: tube
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 0.1mA
Max. forward voltage: 1.4V
Load current: 20A x2
Max. load current: 84A
Power dissipation: 253W
Max. off-state voltage: 650V
Max. forward impulse current: 1.04kA
Produkt ist nicht verfügbar
Im Einkaufswagen
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PCDH4065CCGC_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH4065CCGC-T0 THT Schottky diodes
PCDH4065CCGC-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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PCDP0465G1_T0_00001 |
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Hersteller: PanJit Semiconductor
PCDP0465G1-T0 THT Schottky diodes
PCDP0465G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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Stück im Wert von UAH
PCDP05120G1_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
PCDP05120G1-T0 THT Schottky diodes
PCDP05120G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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PCDP0665G1_T0_00001 |
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Hersteller: PanJit Semiconductor
PCDP0665G1-T0 THT Schottky diodes
PCDP0665G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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Stück im Wert von UAH
PCDP08120G1_T0_00001 |
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Hersteller: PanJit Semiconductor
PCDP08120G1-T0 THT Schottky diodes
PCDP08120G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
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PCDP0865G1_T0_00001 |
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Hersteller: PanJit Semiconductor
PCDP0865G1-T0 THT Schottky diodes
PCDP0865G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
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PCDP10120G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 76A
Max. forward impulse current: 0.64kA
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 76A
Max. forward impulse current: 0.64kA
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDP10120G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 76A
Max. forward impulse current: 0.64kA
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 76A
Max. forward impulse current: 0.64kA
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
PCDP1065G1_T0_00001 |
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Hersteller: PanJit Semiconductor
PCDP1065G1-T0 THT Schottky diodes
PCDP1065G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDP1265G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 80uA
Case: TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 80µA
Power dissipation: 102.7W
Max. forward voltage: 1.8V
Load current: 12A
Max. load current: 52A
Max. forward impulse current: 0.64kA
Max. off-state voltage: 650V
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 80uA
Case: TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 80µA
Power dissipation: 102.7W
Max. forward voltage: 1.8V
Load current: 12A
Max. load current: 52A
Max. forward impulse current: 0.64kA
Max. off-state voltage: 650V
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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PCDP1265G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 80uA
Case: TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 80µA
Power dissipation: 102.7W
Max. forward voltage: 1.8V
Load current: 12A
Max. load current: 52A
Max. forward impulse current: 0.64kA
Max. off-state voltage: 650V
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 80uA
Case: TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 80µA
Power dissipation: 102.7W
Max. forward voltage: 1.8V
Load current: 12A
Max. load current: 52A
Max. forward impulse current: 0.64kA
Max. off-state voltage: 650V
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDP15120G1_T0_00001 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDP15120G1_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDP1665G1_T0_00001 |
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Hersteller: PanJit Semiconductor
PCDP1665G1-T0 THT Schottky diodes
PCDP1665G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDP20120G1_T0_00001 |
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Hersteller: PanJit Semiconductor
PCDP20120G1-T0 THT Schottky diodes
PCDP20120G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDP2065G1_T0_00001 |
![]() |
Hersteller: PanJit Semiconductor
PCDP2065G1-T0 THT Schottky diodes
PCDP2065G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PDZ5.1B-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
610+ | 0.12 EUR |
981+ | 0.073 EUR |
1656+ | 0.043 EUR |
1755+ | 0.041 EUR |
PDZ5.1B-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4990 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
610+ | 0.12 EUR |
981+ | 0.073 EUR |
1656+ | 0.043 EUR |
1755+ | 0.041 EUR |
5000+ | 0.04 EUR |
10000+ | 0.039 EUR |
PE1403M1Q_R1_00001 |
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Hersteller: PanJit Semiconductor
PE1403M1Q-R1 Protection diodes - arrays
PE1403M1Q-R1 Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PE1805C4A6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8480 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
439+ | 0.16 EUR |
642+ | 0.11 EUR |
828+ | 0.086 EUR |
847+ | 0.085 EUR |
876+ | 0.082 EUR |
1000+ | 0.079 EUR |
PE1805C4A6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Version: ESD
auf Bestellung 8480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
439+ | 0.16 EUR |
642+ | 0.11 EUR |
828+ | 0.086 EUR |
847+ | 0.085 EUR |
876+ | 0.082 EUR |
1000+ | 0.079 EUR |
PE1805C4C6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
516+ | 0.14 EUR |
736+ | 0.097 EUR |
991+ | 0.072 EUR |
1047+ | 0.068 EUR |
3000+ | 0.067 EUR |
6000+ | 0.066 EUR |
PE1805C4C6_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Version: ESD
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
516+ | 0.14 EUR |
736+ | 0.097 EUR |
991+ | 0.072 EUR |
1047+ | 0.068 EUR |
PE4105C1ES_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Capacitance: 120pF
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Capacitance: 120pF
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
895+ | 0.08 EUR |
1352+ | 0.053 EUR |
1931+ | 0.037 EUR |
2263+ | 0.032 EUR |
2874+ | 0.025 EUR |
3031+ | 0.024 EUR |
PE4105C1ES_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Capacitance: 120pF
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Capacitance: 120pF
Leakage current: 1µA
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
895+ | 0.08 EUR |
1352+ | 0.053 EUR |
1931+ | 0.037 EUR |
2263+ | 0.032 EUR |
2874+ | 0.025 EUR |
3031+ | 0.024 EUR |
PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PEC1605M1Q_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PEC1605M1Q_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PEC3202M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
PEC3202M1Q-R1 Bidirectional TVS SMD diodes
PEC3202M1Q-R1 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PEC3205M1Q_R1_00201 |
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Hersteller: PanJit Semiconductor
PEC3205M1Q-R1 Bidirectional TVS SMD diodes
PEC3205M1Q-R1 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PEC3324C2A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Application: automotive industry
Semiconductor structure: bidirectional; double
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Application: automotive industry
Semiconductor structure: bidirectional; double
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
250+ | 0.29 EUR |
368+ | 0.19 EUR |
569+ | 0.13 EUR |
596+ | 0.12 EUR |