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PJQ4534P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 10.7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 152A
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4534P_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 8.9mΩ
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 144A
Produkt ist nicht verfügbar
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1952 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
54+1.35 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 36
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1952 Stücke:
Lieferzeit 7-14 Tag (e)
36+1.99 EUR
54+1.35 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 36
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PJS6421_S1_00001 PanJit Semiconductor PJS6421.pdf PJS6421-S1 SMD P channel transistors
auf Bestellung 2941 Stücke:
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141+0.51 EUR
496+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 141
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PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2648 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
217+0.33 EUR
285+0.25 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 152
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PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2648 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
217+0.33 EUR
285+0.25 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 152
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PJS6839_S1_00001 PJS6839_S1_00001 PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2949 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
261+0.27 EUR
427+0.17 EUR
903+0.079 EUR
957+0.075 EUR
30000+0.074 EUR
Mindestbestellmenge: 179
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PJS6839_S1_00001 PJS6839_S1_00001 PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
auf Bestellung 2949 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
261+0.27 EUR
427+0.17 EUR
903+0.079 EUR
957+0.075 EUR
Mindestbestellmenge: 179
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PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
auf Bestellung 4700 Stücke:
Lieferzeit 7-14 Tag (e)
348+0.21 EUR
920+0.078 EUR
973+0.074 EUR
Mindestbestellmenge: 348
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PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Version: ESD
Capacitance: 110pF
Application: automotive industry
auf Bestellung 4777 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
417+0.17 EUR
556+0.13 EUR
758+0.094 EUR
807+0.089 EUR
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PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Version: ESD
Capacitance: 110pF
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4777 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
417+0.17 EUR
556+0.13 EUR
758+0.094 EUR
807+0.089 EUR
5000+0.086 EUR
Mindestbestellmenge: 295
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PJSD12CW-AU_R1_000A1 PJSD12CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 15A
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Capacitance: 0.1nF
Version: ESD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJSD24TS_R1_00001 PJSD24TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 120W
Version: ESD
Produkt ist nicht verfügbar
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PJSD36W_R1_00001 PanJit Semiconductor PJSD36W-R1 Unidirectional TVS SMD diodes
auf Bestellung 4635 Stücke:
Lieferzeit 7-14 Tag (e)
170+0.42 EUR
794+0.09 EUR
848+0.084 EUR
10000+0.083 EUR
Mindestbestellmenge: 170
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PJT138K-AU_R1_000A1 PanJit Semiconductor PJT138K-AU-R1 Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
211+0.34 EUR
861+0.083 EUR
911+0.079 EUR
3000+0.076 EUR
Mindestbestellmenge: 211
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PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Case: SOT363
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2695 Stücke:
Lieferzeit 7-14 Tag (e)
107+0.67 EUR
168+0.43 EUR
262+0.27 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 107
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PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Case: SOT363
auf Bestellung 2695 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
168+0.43 EUR
262+0.27 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 107
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PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf PJT7603-R1 Multi channel transistors
auf Bestellung 2880 Stücke:
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207+0.35 EUR
861+0.083 EUR
911+0.079 EUR
Mindestbestellmenge: 207
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PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.4Ω
Gate charge: 1.6nC
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5978 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
252+0.28 EUR
477+0.15 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 167
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PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.4Ω
Gate charge: 1.6nC
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 5978 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
252+0.28 EUR
477+0.15 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 167
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PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf PJT7801-R1 Multi channel transistors
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
122+0.59 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 122
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PJT7828_R1_00001 PJT7828_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; Idm: 0.6A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Gate charge: 0.9nC
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
On-state resistance: 4Ω
Gate-source voltage: ±10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf PJT7838-R1 Multi channel transistors
auf Bestellung 7648 Stücke:
Lieferzeit 7-14 Tag (e)
119+0.6 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 119
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PJW4N06A-AU_R2_000A1 PJW4N06A-AU_R2_000A1 PanJit Semiconductor PJW4N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJW4N06A_R2_00001 PJW4N06A_R2_00001 PanJit Semiconductor PJW4N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJW4P06A-AU_R2_000A1 PanJit Semiconductor PJW4P06A-AU.pdf PJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 3190 Stücke:
Lieferzeit 7-14 Tag (e)
82+0.88 EUR
288+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 82
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PJW4P06A_R2_00001 PanJit Semiconductor PJW4P06A.pdf PJW4P06A-R2 SMD P channel transistors
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)
96+0.75 EUR
376+0.19 EUR
400+0.18 EUR
25000+0.17 EUR
Mindestbestellmenge: 96
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PJX138K_R1_00001 PanJit Semiconductor PJX138K-R1 Multi channel transistors
auf Bestellung 3935 Stücke:
Lieferzeit 7-14 Tag (e)
211+0.34 EUR
817+0.088 EUR
866+0.083 EUR
8000+0.08 EUR
Mindestbestellmenge: 211
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PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf PJX8603-R1 Multi channel transistors
auf Bestellung 1927 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 179
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PSMB050N10NS2_R2_00601 PanJit Semiconductor PSMB050N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMB050N10NS2_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMB055N08NS1_R2_00601 PanJit Semiconductor PSMB055N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMB055N08NS1_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN015N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN028N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMP050N10NS2_T0_00601 PSMP050N10NS2_T0_00601 PanJit Semiconductor PSMP050N10NS2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMP055N08NS1_T0_00601 PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 94 Stücke:
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31+2.32 EUR
53+1.36 EUR
73+0.99 EUR
77+0.93 EUR
5000+0.89 EUR
Mindestbestellmenge: 31
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PSMP055N08NS1_T0_00601 PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 94 Stücke:
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31+2.32 EUR
53+1.36 EUR
73+0.99 EUR
77+0.93 EUR
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PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AL3V6B_R1_00001 PZ1AL3V6B_R1_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD777F43B000D6&compId=PZ1AL2V5B_SERIES.pdf?ci_sign=ea874c3065385691540a120aa0607719ef6dba2b Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.1mA
Produkt ist nicht verfügbar
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PZS1112BES_R1_00001 PZS1112BES_R1_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD7D0E97BE80D6&compId=PZS113V9BES_SERIES.pdf?ci_sign=853258471ac4652b4efaf8e6a22e525f801d3fd0 Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Produkt ist nicht verfügbar
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PZS516V2BAS_R1_00001 PZS516V2BAS_R1_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD570BA54420D6&compId=PZS513V9BAS_SERIES.pdf?ci_sign=ca4b9ef1d21413a31c2d61e96903f5acd7c30dd2 Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
694+0.1 EUR
1208+0.059 EUR
1279+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
PZS516V2BAS_R1_00001 PZS516V2BAS_R1_00001 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD570BA54420D6&compId=PZS513V9BAS_SERIES.pdf?ci_sign=ca4b9ef1d21413a31c2d61e96903f5acd7c30dd2 Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
694+0.1 EUR
1208+0.059 EUR
1279+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RB500V-40_R1_00001 PanJit Semiconductor RB500V-40.pdf RB500V-40-R1 SMD Schottky diodes
auf Bestellung 6770 Stücke:
Lieferzeit 7-14 Tag (e)
567+0.13 EUR
2703+0.026 EUR
2858+0.025 EUR
125000+0.024 EUR
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RB501V-40_R1_00001 PanJit Semiconductor RB501V-40.pdf RB501V-40-R1 SMD Schottky diodes
auf Bestellung 5250 Stücke:
Lieferzeit 7-14 Tag (e)
439+0.16 EUR
2646+0.027 EUR
2794+0.026 EUR
Mindestbestellmenge: 439
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RB520S30_R1_00001 RB520S30_R1_00001 PanJit Semiconductor RB520S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 1µA
Max. forward voltage: 0.6V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4976 Stücke:
Lieferzeit 7-14 Tag (e)
556+0.13 EUR
782+0.092 EUR
1180+0.061 EUR
1924+0.037 EUR
2033+0.035 EUR
5000+0.034 EUR
Mindestbestellmenge: 556
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RB520S30_R1_00001 RB520S30_R1_00001 PanJit Semiconductor RB520S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 1µA
Max. forward voltage: 0.6V
auf Bestellung 4976 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
782+0.092 EUR
1180+0.061 EUR
1924+0.037 EUR
2033+0.035 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
RB520S40-AU_R1_000A1 RB520S40-AU_R1_000A1 PanJit Semiconductor RB520S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.6V
Leakage current: 0.6mA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB521S30_R1_00001 RB521S30_R1_00001 PanJit Semiconductor RB521S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6478 Stücke:
Lieferzeit 7-14 Tag (e)
585+0.12 EUR
878+0.082 EUR
1296+0.055 EUR
2110+0.034 EUR
2233+0.032 EUR
5000+0.031 EUR
Mindestbestellmenge: 585
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RB521S30_R1_00001 RB521S30_R1_00001 PanJit Semiconductor RB521S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
auf Bestellung 6478 Stücke:
Lieferzeit 14-21 Tag (e)
585+0.12 EUR
878+0.082 EUR
1296+0.055 EUR
2110+0.034 EUR
2233+0.032 EUR
5000+0.031 EUR
Mindestbestellmenge: 585
Im Einkaufswagen  Stück im Wert von  UAH
RB751S40-AU_R1_000A1 RB751S40-AU_R1_000A1 PanJit Semiconductor RB751S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
625+0.11 EUR
969+0.074 EUR
1656+0.043 EUR
1755+0.041 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RB751S40-AU_R1_000A1 RB751S40-AU_R1_000A1 PanJit Semiconductor RB751S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2785 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
625+0.11 EUR
969+0.074 EUR
1656+0.043 EUR
1755+0.041 EUR
5000+0.04 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RB751V-40-AU_R1_000A1 RB751V-40-AU_R1_000A1 PanJit Semiconductor RB751V-40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
auf Bestellung 4899 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
506+0.14 EUR
810+0.088 EUR
1645+0.043 EUR
1737+0.041 EUR
Mindestbestellmenge: 313
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RB751V-40X_R1_00001 RB751V-40X_R1_00001 PanJit Semiconductor RB751V-40X.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
auf Bestellung 4279 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
618+0.12 EUR
1029+0.069 EUR
1916+0.037 EUR
2025+0.035 EUR
2500+0.034 EUR
Mindestbestellmenge: 556
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RB751V-40_R1_00001 RB751V-40_R1_00001 PanJit Semiconductor RB751V-40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 3247 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
794+0.09 EUR
1235+0.058 EUR
1954+0.037 EUR
2067+0.035 EUR
2101+0.034 EUR
Mindestbestellmenge: 455
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RB751V-40-AU_R1_000A1 RB751V-40-AU_R1_000A1 PanJit Semiconductor RB751V-40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4899 Stücke:
Lieferzeit 7-14 Tag (e)
313+0.23 EUR
506+0.14 EUR
810+0.088 EUR
1645+0.043 EUR
1737+0.041 EUR
5000+0.04 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
RB751V-40_R1_00001 RB751V-40_R1_00001 PanJit Semiconductor RB751V-40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3247 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
794+0.09 EUR
1235+0.058 EUR
1954+0.037 EUR
2067+0.035 EUR
2101+0.034 EUR
5000+0.033 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RB751V-40X_R1_00001 RB751V-40X_R1_00001 PanJit Semiconductor RB751V-40X.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4279 Stücke:
Lieferzeit 7-14 Tag (e)
556+0.13 EUR
618+0.12 EUR
1029+0.069 EUR
1916+0.037 EUR
2025+0.035 EUR
2500+0.034 EUR
Mindestbestellmenge: 556
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RS1002FL_R1_00001 RS1002FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
556+0.13 EUR
939+0.076 EUR
1194+0.06 EUR
Mindestbestellmenge: 358
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PJQ4534P-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 10.7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 152A
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4534P_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 8.9mΩ
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 144A
Produkt ist nicht verfügbar
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PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1952 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
54+1.35 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1952 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
36+1.99 EUR
54+1.35 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
PJS6421_S1_00001 PJS6421.pdf
Hersteller: PanJit Semiconductor
PJS6421-S1 SMD P channel transistors
auf Bestellung 2941 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
141+0.51 EUR
496+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 141
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PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2648 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
152+0.47 EUR
217+0.33 EUR
285+0.25 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
217+0.33 EUR
285+0.25 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2949 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.4 EUR
261+0.27 EUR
427+0.17 EUR
903+0.079 EUR
957+0.075 EUR
30000+0.074 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
auf Bestellung 2949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
261+0.27 EUR
427+0.17 EUR
903+0.079 EUR
957+0.075 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
auf Bestellung 4700 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
348+0.21 EUR
920+0.078 EUR
973+0.074 EUR
Mindestbestellmenge: 348
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Version: ESD
Capacitance: 110pF
Application: automotive industry
auf Bestellung 4777 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
417+0.17 EUR
556+0.13 EUR
758+0.094 EUR
807+0.089 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Version: ESD
Capacitance: 110pF
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4777 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
295+0.24 EUR
417+0.17 EUR
556+0.13 EUR
758+0.094 EUR
807+0.089 EUR
5000+0.086 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
PJSD12CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
PJSD12CW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 15A
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Capacitance: 0.1nF
Version: ESD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD24TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD24TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 120W
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD36W_R1_00001
Hersteller: PanJit Semiconductor
PJSD36W-R1 Unidirectional TVS SMD diodes
auf Bestellung 4635 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
170+0.42 EUR
794+0.09 EUR
848+0.084 EUR
10000+0.083 EUR
Mindestbestellmenge: 170
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
PJT138K-AU-R1 Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
211+0.34 EUR
861+0.083 EUR
911+0.079 EUR
3000+0.076 EUR
Mindestbestellmenge: 211
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Case: SOT363
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2695 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
107+0.67 EUR
168+0.43 EUR
262+0.27 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Case: SOT363
auf Bestellung 2695 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
168+0.43 EUR
262+0.27 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
PJT7603_R1_00001 PJT7603.pdf
Hersteller: PanJit Semiconductor
PJT7603-R1 Multi channel transistors
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
207+0.35 EUR
861+0.083 EUR
911+0.079 EUR
Mindestbestellmenge: 207
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.4Ω
Gate charge: 1.6nC
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5978 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
167+0.43 EUR
252+0.28 EUR
477+0.15 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.4Ω
Gate charge: 1.6nC
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 5978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
252+0.28 EUR
477+0.15 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801.pdf
Hersteller: PanJit Semiconductor
PJT7801-R1 Multi channel transistors
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
122+0.59 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
PJT7828_R1_00001
PJT7828_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; Idm: 0.6A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Gate charge: 0.9nC
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
On-state resistance: 4Ω
Gate-source voltage: ±10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
Hersteller: PanJit Semiconductor
PJT7838-R1 Multi channel transistors
auf Bestellung 7648 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
119+0.6 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 119
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU.pdf
PJW4N06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A.pdf
PJW4N06A_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A-AU_R2_000A1 PJW4P06A-AU.pdf
Hersteller: PanJit Semiconductor
PJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 3190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
82+0.88 EUR
288+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A_R2_00001 PJW4P06A.pdf
Hersteller: PanJit Semiconductor
PJW4P06A-R2 SMD P channel transistors
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
96+0.75 EUR
376+0.19 EUR
400+0.18 EUR
25000+0.17 EUR
Mindestbestellmenge: 96
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001
Hersteller: PanJit Semiconductor
PJX138K-R1 Multi channel transistors
auf Bestellung 3935 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
211+0.34 EUR
817+0.088 EUR
866+0.083 EUR
8000+0.08 EUR
Mindestbestellmenge: 211
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603.pdf
Hersteller: PanJit Semiconductor
PJX8603-R1 Multi channel transistors
auf Bestellung 1927 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.4 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_R2_00601 PSMB050N10NS2.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB050N10NS2_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN028N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP050N10NS2_T0_00601 PSMP050N10NS2.pdf
PSMP050N10NS2_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
PSMP055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.32 EUR
53+1.36 EUR
73+0.99 EUR
77+0.93 EUR
5000+0.89 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
PSMP055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
53+1.36 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PZ1AL3V6B_R1_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD777F43B000D6&compId=PZ1AL2V5B_SERIES.pdf?ci_sign=ea874c3065385691540a120aa0607719ef6dba2b
PZ1AL3V6B_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.1mA
Produkt ist nicht verfügbar
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PZS1112BES_R1_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD7D0E97BE80D6&compId=PZS113V9BES_SERIES.pdf?ci_sign=853258471ac4652b4efaf8e6a22e525f801d3fd0
PZS1112BES_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Produkt ist nicht verfügbar
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PZS516V2BAS_R1_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD570BA54420D6&compId=PZS513V9BAS_SERIES.pdf?ci_sign=ca4b9ef1d21413a31c2d61e96903f5acd7c30dd2
PZS516V2BAS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
694+0.1 EUR
1208+0.059 EUR
1279+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
PZS516V2BAS_R1_00001 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9DFD570BA54420D6&compId=PZS513V9BAS_SERIES.pdf?ci_sign=ca4b9ef1d21413a31c2d61e96903f5acd7c30dd2
PZS516V2BAS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
694+0.1 EUR
1208+0.059 EUR
1279+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 455
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RB500V-40_R1_00001 RB500V-40.pdf
Hersteller: PanJit Semiconductor
RB500V-40-R1 SMD Schottky diodes
auf Bestellung 6770 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
567+0.13 EUR
2703+0.026 EUR
2858+0.025 EUR
125000+0.024 EUR
Mindestbestellmenge: 567
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RB501V-40_R1_00001 RB501V-40.pdf
Hersteller: PanJit Semiconductor
RB501V-40-R1 SMD Schottky diodes
auf Bestellung 5250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
439+0.16 EUR
2646+0.027 EUR
2794+0.026 EUR
Mindestbestellmenge: 439
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RB520S30_R1_00001 RB520S30.pdf
RB520S30_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 1µA
Max. forward voltage: 0.6V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4976 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
556+0.13 EUR
782+0.092 EUR
1180+0.061 EUR
1924+0.037 EUR
2033+0.035 EUR
5000+0.034 EUR
Mindestbestellmenge: 556
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RB520S30_R1_00001 RB520S30.pdf
RB520S30_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 1µA
Max. forward voltage: 0.6V
auf Bestellung 4976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
782+0.092 EUR
1180+0.061 EUR
1924+0.037 EUR
2033+0.035 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
RB520S40-AU_R1_000A1 RB520S40-AU.pdf
RB520S40-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.6V
Leakage current: 0.6mA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB521S30_R1_00001 RB521S30.pdf
RB521S30_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6478 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
585+0.12 EUR
878+0.082 EUR
1296+0.055 EUR
2110+0.034 EUR
2233+0.032 EUR
5000+0.031 EUR
Mindestbestellmenge: 585
Im Einkaufswagen  Stück im Wert von  UAH
RB521S30_R1_00001 RB521S30.pdf
RB521S30_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
auf Bestellung 6478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
878+0.082 EUR
1296+0.055 EUR
2110+0.034 EUR
2233+0.032 EUR
5000+0.031 EUR
Mindestbestellmenge: 585
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RB751S40-AU_R1_000A1 RB751S40-AU.pdf
RB751S40-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
625+0.11 EUR
969+0.074 EUR
1656+0.043 EUR
1755+0.041 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RB751S40-AU_R1_000A1 RB751S40-AU.pdf
RB751S40-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2785 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
625+0.11 EUR
969+0.074 EUR
1656+0.043 EUR
1755+0.041 EUR
5000+0.04 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RB751V-40-AU_R1_000A1 RB751V-40-AU.pdf
RB751V-40-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
auf Bestellung 4899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
506+0.14 EUR
810+0.088 EUR
1645+0.043 EUR
1737+0.041 EUR
Mindestbestellmenge: 313
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RB751V-40X_R1_00001 RB751V-40X.pdf
RB751V-40X_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
auf Bestellung 4279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
618+0.12 EUR
1029+0.069 EUR
1916+0.037 EUR
2025+0.035 EUR
2500+0.034 EUR
Mindestbestellmenge: 556
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RB751V-40_R1_00001 RB751V-40.pdf
RB751V-40_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 3247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
794+0.09 EUR
1235+0.058 EUR
1954+0.037 EUR
2067+0.035 EUR
2101+0.034 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RB751V-40-AU_R1_000A1 RB751V-40-AU.pdf
RB751V-40-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4899 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
313+0.23 EUR
506+0.14 EUR
810+0.088 EUR
1645+0.043 EUR
1737+0.041 EUR
5000+0.04 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
RB751V-40_R1_00001 RB751V-40.pdf
RB751V-40_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3247 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
794+0.09 EUR
1235+0.058 EUR
1954+0.037 EUR
2067+0.035 EUR
2101+0.034 EUR
5000+0.033 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
RB751V-40X_R1_00001 RB751V-40X.pdf
RB751V-40X_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4279 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
556+0.13 EUR
618+0.12 EUR
1029+0.069 EUR
1916+0.037 EUR
2025+0.035 EUR
2500+0.034 EUR
Mindestbestellmenge: 556
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RS1002FL_R1_00001 RS1001FL_SERIES.pdf
RS1002FL_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
358+0.2 EUR
556+0.13 EUR
939+0.076 EUR
1194+0.06 EUR
Mindestbestellmenge: 358
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