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PJMP190N65FR2_T0_00601 PanJit Semiconductor PJMP190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJP125N06SA-AU_T0_006A1 PanJit Semiconductor PJP125N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJQ4544S6P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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PJQ5522-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
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PJQ5522S6-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 108A
Application: automotive industry
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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64+1.13 EUR
100+0.88 EUR
250+0.74 EUR
500+0.67 EUR
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PJQ5544S6-AU_R2_002A1 PanJit Semiconductor PJQ5544S6-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 101A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJQ5544S6V-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 90A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJQ5544V-AU_R2_002A1 PJQ5544V-AU_R2_002A1 PanJit Semiconductor PJQ5544V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJSD03LCFN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
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PJSD24TS-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
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PJSD24TS_R1_00001 PJSD24TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
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PJT7807_R1_00001 PanJit Semiconductor PJT7807.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT363
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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PJT7808_R1_00001 PanJit Semiconductor PJT7808.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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PJX8872B_R1_00001 PanJit Semiconductor PJX8872B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PMS410_R2_00601 PMS410_R2_00601 PanJit Semiconductor PMS410.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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PSMB033N10NS2_R2_00201 PanJit Semiconductor PSMB033N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Gate-source voltage: 20V
Kind of channel: enhancement
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PSMB055N08NS1_R2_00601 PanJit Semiconductor PSMB055N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMB055N08NS1_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMP055N08NS1_T0_00601 PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
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57+1.26 EUR
63+1.14 EUR
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PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC042N10LS2_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC060N06LS1-AU_R2_006A1 PanJit Semiconductor PSMQC060N06LS1-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PSMQC060N06LS1_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC120N06LS1-AU_R2_006A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PSMQC120N06LS1_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PZ1AH27B-AU_R1_000A1 PanJit Semiconductor PZ1AH3V6B-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Application: automotive industry
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PZ1AH27B_R1_00001 PanJit Semiconductor PZ1AH3V6B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
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PZD22B16C-AU_R1_000A1 PanJit Semiconductor PZD22B2V4C-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
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PZD22B16C_R1_00001 PanJit Semiconductor PZD22B2V4C_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
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PZS1115BES_R1_00001 PZS1115BES_R1_00001 PanJit Semiconductor PZS113V9BES_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.15W
Zener voltage: 15V
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PZS1117BES_R1_00001 PZS1117BES_R1_00001 PanJit Semiconductor PZS113V9BES_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 17V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 17V
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PZS1125BES_R1_00001 PZS1125BES_R1_00001 PanJit Semiconductor PZS113V9BES_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 25V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 25V
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PZS5115BAS-AU_R1_000A1 PZS5115BAS-AU_R1_000A1 PanJit Semiconductor PZS513V9BAS-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
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PZS5115BCH-AU_R1_000A1 PanJit Semiconductor PZS513V9BCH-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
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PZS5125BAS-AU_R1_000A1 PZS5125BAS-AU_R1_000A1 PanJit Semiconductor PZS513V9BAS-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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PZS5125BCH-AU_R1_000A1 PanJit Semiconductor PZS513V9BCH-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD323HE; single diode
Application: automotive industry
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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PZS5125BCH_R1_00001 PanJit Semiconductor PZS513V9BCH_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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PZS51A5V1CS_R1_00001 PZS51A5V1CS_R1_00001 PanJit Semiconductor PZS51A3V9CS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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RB521S30_R1_00001 RB521S30_R1_00001 PanJit Semiconductor RB521S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
auf Bestellung 5933 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1042+0.069 EUR
1458+0.049 EUR
1938+0.037 EUR
2253+0.032 EUR
2337+0.031 EUR
Mindestbestellmenge: 625
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RB751S40-AU_R1_000A1 RB751S40-AU_R1_000A1 PanJit Semiconductor RB751S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 10µA
Application: automotive industry
auf Bestellung 2755 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
820+0.087 EUR
1235+0.058 EUR
1619+0.044 EUR
1806+0.04 EUR
Mindestbestellmenge: 500
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RB751S40_R1_00001 RB751S40_R1_00001 PanJit Semiconductor RB751S40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 0.5µA
Power dissipation: 0.2W
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RPMS410_R2_00601 PanJit Semiconductor RPMS410.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
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RS1002FL_R1_00001 RS1002FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: fast switching; glass passivated
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
695+0.1 EUR
1153+0.062 EUR
1211+0.059 EUR
Mindestbestellmenge: 455
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RS1004FL_R1_00001 RS1004FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching; glass passivated
auf Bestellung 2860 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
747+0.096 EUR
1223+0.058 EUR
1270+0.056 EUR
Mindestbestellmenge: 455
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RS1006FL_R1_00001 RS1006FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: fast switching; glass passivated
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RS1008FL_R1_00001 RS1008FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: fast switching; glass passivated
auf Bestellung 2580 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
538+0.13 EUR
928+0.077 EUR
1174+0.061 EUR
Mindestbestellmenge: 334
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RS1010FL_R1_00001 RS1010FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 1254 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
625+0.11 EUR
1051+0.068 EUR
1155+0.062 EUR
Mindestbestellmenge: 385
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RS1J_R1_00001 RS1J_R1_00001 PanJit Semiconductor RS1A_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 1540 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
582+0.12 EUR
769+0.093 EUR
977+0.073 EUR
1107+0.065 EUR
Mindestbestellmenge: 358
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SBA340AH_R1_00001 SBA340AH_R1_00001 PanJit Semiconductor SBA320AH_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 12mA
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
589+0.12 EUR
782+0.092 EUR
1000+0.082 EUR
Mindestbestellmenge: 218
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SBA340AL_R1_00001 SBA340AL_R1_00001 PanJit Semiconductor SBA320AL_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 12mA
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
400+0.18 EUR
575+0.12 EUR
758+0.094 EUR
1000+0.089 EUR
Mindestbestellmenge: 264
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SBM260VAL_R1_00001 SBM260VAL_R1_00001 PanJit Semiconductor SBM260VAL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 3mA
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
296+0.24 EUR
391+0.18 EUR
610+0.12 EUR
782+0.092 EUR
Mindestbestellmenge: 200
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SD103AWS_R1_00001 SD103AWS_R1_00001 PanJit Semiconductor SD103AWS_SD103CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Mounting: SMD
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: Schottky switching
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
724+0.099 EUR
Mindestbestellmenge: 625
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SD103CWS_R1_00001 SD103CWS_R1_00001 PanJit Semiconductor SD103AW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: Schottky switching
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
543+0.13 EUR
858+0.083 EUR
1109+0.064 EUR
2500+0.045 EUR
5000+0.037 EUR
Mindestbestellmenge: 417
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SK26_R1_00001 SK26_R1_00001 PanJit Semiconductor SK22_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
575+0.12 EUR
758+0.094 EUR
794+0.09 EUR
Mindestbestellmenge: 209
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SK26_R2_00001 SK26_R2_00001 PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SK34_R1_00001 SK34_R1_00001 PanJit Semiconductor SK32_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Leakage current: 20mA
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
315+0.23 EUR
544+0.13 EUR
676+0.11 EUR
Mindestbestellmenge: 218
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PJMP190N65FR2_T0_00601 PJMP190N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
PJMP360N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJP125N06SA-AU_T0_006A1 PJP125N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJP18N20_T0_00001 PJx18N20.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJQ4544S6P-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ5522-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5522S6-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 108A
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
auf Bestellung 1952 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
64+1.13 EUR
100+0.88 EUR
250+0.74 EUR
500+0.67 EUR
1000+0.62 EUR
Mindestbestellmenge: 41
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PJQ5544S6-AU_R2_002A1 PJQ5544S6-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 101A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJQ5544S6V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 90A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJQ5544V-AU_R2_002A1 PJQ5544V-AU.pdf
PJQ5544V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJSD03LCFN2_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
Produkt ist nicht verfügbar
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PJSD24TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Produkt ist nicht verfügbar
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PJSD24TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD24TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Produkt ist nicht verfügbar
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PJT7807_R1_00001 PJT7807.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT363
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
Produkt ist nicht verfügbar
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PJT7808_R1_00001 PJT7808.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
Produkt ist nicht verfügbar
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PJX8872B_R1_00001 PJX8872B.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PMS410_R2_00601 PMS410.pdf
PMS410_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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PSMB033N10NS2_R2_00201 PSMB033N10NS2.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Gate-source voltage: 20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMB055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
PSMP055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
57+1.26 EUR
63+1.14 EUR
Mindestbestellmenge: 34
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PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMQC042N10LS2_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMQC060N06LS1-AU_R2_006A1 PSMQC060N06LS1-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PSMQC060N06LS1_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMQC120N06LS1-AU_R2_006A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC120N06LS1_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PZ1AH27B-AU_R1_000A1 PZ1AH3V6B-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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PZ1AH27B_R1_00001 PZ1AH3V6B_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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PZD22B16C-AU_R1_000A1 PZD22B2V4C-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
Produkt ist nicht verfügbar
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PZD22B16C_R1_00001 PZD22B2V4C_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
Produkt ist nicht verfügbar
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PZS1115BES_R1_00001 PZS113V9BES_SERIES.pdf
PZS1115BES_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.15W
Zener voltage: 15V
Produkt ist nicht verfügbar
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PZS1117BES_R1_00001 PZS113V9BES_SERIES.pdf
PZS1117BES_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 17V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 17V
Produkt ist nicht verfügbar
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PZS1125BES_R1_00001 PZS113V9BES_SERIES.pdf
PZS1125BES_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 25V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 25V
Produkt ist nicht verfügbar
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PZS5115BAS-AU_R1_000A1 PZS513V9BAS-AU_SER.pdf
PZS5115BAS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
Produkt ist nicht verfügbar
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PZS5115BCH-AU_R1_000A1 PZS513V9BCH-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
Produkt ist nicht verfügbar
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PZS5125BAS-AU_R1_000A1 PZS513V9BAS-AU_SER.pdf
PZS5125BAS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
Produkt ist nicht verfügbar
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PZS5125BCH-AU_R1_000A1 PZS513V9BCH-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD323HE; single diode
Application: automotive industry
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
Produkt ist nicht verfügbar
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PZS5125BCH_R1_00001 PZS513V9BCH_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
Produkt ist nicht verfügbar
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PZS51A5V1CS_R1_00001 PZS51A3V9CS_SER.pdf
PZS51A5V1CS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Produkt ist nicht verfügbar
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RB521S30_R1_00001 RB521S30.pdf
RB521S30_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
auf Bestellung 5933 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1042+0.069 EUR
1458+0.049 EUR
1938+0.037 EUR
2253+0.032 EUR
2337+0.031 EUR
Mindestbestellmenge: 625
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RB751S40-AU_R1_000A1 RB751S40-AU.pdf
RB751S40-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 10µA
Application: automotive industry
auf Bestellung 2755 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
820+0.087 EUR
1235+0.058 EUR
1619+0.044 EUR
1806+0.04 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
RB751S40_R1_00001 RB751S40.pdf
RB751S40_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 0.5µA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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RPMS410_R2_00601 RPMS410.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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RS1002FL_R1_00001 RS1001FL_SERIES.pdf
RS1002FL_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: fast switching; glass passivated
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
695+0.1 EUR
1153+0.062 EUR
1211+0.059 EUR
Mindestbestellmenge: 455
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RS1004FL_R1_00001 RS1001FL_SERIES.pdf
RS1004FL_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching; glass passivated
auf Bestellung 2860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
747+0.096 EUR
1223+0.058 EUR
1270+0.056 EUR
Mindestbestellmenge: 455
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RS1006FL_R1_00001 RS1001FL_SERIES.pdf
RS1006FL_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: fast switching; glass passivated
Produkt ist nicht verfügbar
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RS1008FL_R1_00001 RS1001FL_SERIES.pdf
RS1008FL_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: fast switching; glass passivated
auf Bestellung 2580 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
538+0.13 EUR
928+0.077 EUR
1174+0.061 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
RS1010FL_R1_00001 RS1001FL_SERIES.pdf
RS1010FL_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 1254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
625+0.11 EUR
1051+0.068 EUR
1155+0.062 EUR
Mindestbestellmenge: 385
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RS1J_R1_00001 RS1A_SERIES.pdf
RS1J_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 1540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
582+0.12 EUR
769+0.093 EUR
977+0.073 EUR
1107+0.065 EUR
Mindestbestellmenge: 358
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SBA340AH_R1_00001 SBA320AH_SERIES.pdf
SBA340AH_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 12mA
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
589+0.12 EUR
782+0.092 EUR
1000+0.082 EUR
Mindestbestellmenge: 218
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SBA340AL_R1_00001 SBA320AL_SERIES.pdf
SBA340AL_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 12mA
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
400+0.18 EUR
575+0.12 EUR
758+0.094 EUR
1000+0.089 EUR
Mindestbestellmenge: 264
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SBM260VAL_R1_00001 SBM260VAL.pdf
SBM260VAL_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 3mA
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
296+0.24 EUR
391+0.18 EUR
610+0.12 EUR
782+0.092 EUR
Mindestbestellmenge: 200
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SD103AWS_R1_00001 SD103AWS_SD103CWS.pdf
SD103AWS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Mounting: SMD
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: Schottky switching
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
724+0.099 EUR
Mindestbestellmenge: 625
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SD103CWS_R1_00001 SD103AW_SERIES.pdf
SD103CWS_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: Schottky switching
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
543+0.13 EUR
858+0.083 EUR
1109+0.064 EUR
2500+0.045 EUR
5000+0.037 EUR
Mindestbestellmenge: 417
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SK26_R1_00001 SK22_SERIES.pdf
SK26_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
575+0.12 EUR
758+0.094 EUR
794+0.09 EUR
Mindestbestellmenge: 209
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SK26_R2_00001
SK26_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SK34_R1_00001 SK32_SERIES.pdf
SK34_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Leakage current: 20mA
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
315+0.23 EUR
544+0.13 EUR
676+0.11 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
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