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P6SMB39CA-AU_R2_000A1 PanJit Semiconductor P6SMB39CA-AU-R2 Bidirectional TVS SMD diodes
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P6SMBJ10CA_R1_00001 P6SMBJ10CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.40 EUR
274+0.26 EUR
379+0.19 EUR
575+0.12 EUR
2400+0.11 EUR
Mindestbestellmenge: 179
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P6SMBJ10CA_R1_00001 P6SMBJ10CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
274+0.26 EUR
379+0.19 EUR
575+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ15CA_R1_00001 P6SMBJ15CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 565 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
281+0.25 EUR
385+0.19 EUR
565+0.13 EUR
2400+0.11 EUR
Mindestbestellmenge: 186
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P6SMBJ15CA_R1_00001 P6SMBJ15CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
281+0.25 EUR
385+0.19 EUR
565+0.13 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ20CAS_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ20CAS_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ26CA-AU_R2_000A1 P6SMBJ26CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ26CA-AU_R2_000A1 P6SMBJ26CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28A_R1_00001 P6SMBJ28A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 795 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
345+0.21 EUR
472+0.15 EUR
715+0.10 EUR
758+0.09 EUR
Mindestbestellmenge: 209
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P6SMBJ28A_R1_00001 P6SMBJ28A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
345+0.21 EUR
472+0.15 EUR
715+0.10 EUR
758+0.09 EUR
Mindestbestellmenge: 209
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P6SMBJ28CA-AU_R1_000A1 P6SMBJ28CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
334+0.21 EUR
371+0.19 EUR
447+0.16 EUR
472+0.15 EUR
Mindestbestellmenge: 278
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P6SMBJ28CA-AU_R1_000A1 P6SMBJ28CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
334+0.21 EUR
371+0.19 EUR
447+0.16 EUR
472+0.15 EUR
2400+0.14 EUR
Mindestbestellmenge: 278
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P6SMBJ30A_R1_00001 P6SMBJ30A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)
228+0.31 EUR
338+0.21 EUR
375+0.19 EUR
457+0.16 EUR
4000+0.09 EUR
5600+0.09 EUR
Mindestbestellmenge: 228
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P6SMBJ30A_R1_00001 P6SMBJ30A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
338+0.21 EUR
375+0.19 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33A_R1_00001 P6SMBJ33A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 860 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.40 EUR
268+0.27 EUR
382+0.19 EUR
685+0.10 EUR
725+0.10 EUR
5600+0.10 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33A_R1_00001 P6SMBJ33A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
268+0.27 EUR
382+0.19 EUR
685+0.10 EUR
725+0.10 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
222+0.32 EUR
404+0.18 EUR
428+0.17 EUR
Mindestbestellmenge: 139
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P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 970 Stücke:
Lieferzeit 7-14 Tag (e)
139+0.51 EUR
222+0.32 EUR
404+0.18 EUR
428+0.17 EUR
1600+0.16 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA_R2_00001 P6SMBJ33CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA_R2_00001 P6SMBJ33CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 675 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
244+0.29 EUR
365+0.20 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
244+0.29 EUR
365+0.20 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ40CA_R2_00001 P6SMBJ40CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5997 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.40 EUR
260+0.28 EUR
323+0.22 EUR
432+0.17 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ40CA_R2_00001 P6SMBJ40CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
auf Bestellung 5997 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
260+0.28 EUR
323+0.22 EUR
432+0.17 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ48A_R2_00001 P6SMBJ48A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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P6SMBJ48A_R2_00001 P6SMBJ48A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0A_R1_00001 P6SMBJ5.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
254+0.28 EUR
371+0.19 EUR
695+0.10 EUR
736+0.10 EUR
8000+0.09 EUR
Mindestbestellmenge: 173
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P6SMBJ5.0A_R1_00001 P6SMBJ5.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
254+0.28 EUR
371+0.19 EUR
695+0.10 EUR
736+0.10 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0CA_R1_00001 P6SMBJ5.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)
129+0.56 EUR
209+0.34 EUR
313+0.23 EUR
575+0.12 EUR
20000+0.11 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0CA_R1_00001 P6SMBJ5.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
209+0.34 EUR
313+0.23 EUR
575+0.12 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ6.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf P6SMBJ6.0A-R1 Unidirectional TVS SMD diodes
auf Bestellung 520 Stücke:
Lieferzeit 7-14 Tag (e)
298+0.24 EUR
520+0.14 EUR
9600+0.10 EUR
Mindestbestellmenge: 298
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P6SMBJ7.5CA_R1_00001 P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
236+0.30 EUR
348+0.21 EUR
430+0.17 EUR
2400+0.12 EUR
4000+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ7.5CA_R1_00001 P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
236+0.30 EUR
348+0.21 EUR
430+0.17 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8110DA-AU_R1_000A1 PBHV8110DA-AU_R1_000A1 PanJit Semiconductor PBHV8110DA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 100MHz
Pulsed collector current: 3A
auf Bestellung 3123 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
371+0.19 EUR
589+0.12 EUR
903+0.08 EUR
955+0.08 EUR
3000+0.07 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8110DA-AU_R1_000A1 PBHV8110DA-AU_R1_000A1 PanJit Semiconductor PBHV8110DA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 100MHz
Pulsed collector current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3123 Stücke:
Lieferzeit 7-14 Tag (e)
228+0.31 EUR
371+0.19 EUR
589+0.12 EUR
903+0.08 EUR
955+0.08 EUR
3000+0.07 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PCDB0665G1_R2_00001 PanJit Semiconductor PCDB0665G1.pdf PCDB0665G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB0865G1_R2_00001 PanJit Semiconductor PCDB0865G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB10120G1_R2_00001 PanJit Semiconductor PCDB10120G1.pdf PCDB10120G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB1065G1_R2_00001 PanJit Semiconductor PCDB1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB1065G1_R2_00001 PanJit Semiconductor PCDB1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB20120G1_R2_00001 PanJit Semiconductor PCDB20120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 960A
Case: TO263
Kind of package: reel; tape
Max. forward voltage: 2V
Max. load current: 152A
Semiconductor structure: single diode
Leakage current: 180µA
Power dissipation: 267.9W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB20120G1_R2_00001 PanJit Semiconductor PCDB20120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 960A
Case: TO263
Kind of package: reel; tape
Max. forward voltage: 2V
Max. load current: 152A
Semiconductor structure: single diode
Leakage current: 180µA
Power dissipation: 267.9W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD0465G1_L2_00001 PanJit Semiconductor PCDD0465G1-L2 SMD Schottky diodes
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PCDD0465GB_L2_00601 PanJit Semiconductor PCDD0465GB-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD05120G1_L2_00001 PanJit Semiconductor PCDD05120G1.pdf PCDD05120G1-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD0665G1_L2_00001 PanJit Semiconductor PCDD0665G1.pdf PCDD0665G1-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD0665GB_L2_00601 PanJit Semiconductor PCDD0665GB-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD08120G1_L2_00001 PanJit Semiconductor PCDD08120G1.pdf PCDD08120G1-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD0865G1_L2_00001 PanJit Semiconductor PCDD0865G1-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD0865GB_L2_00601 PanJit Semiconductor PCDD0865GB-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD10120G1_L2_00001 PanJit Semiconductor PCDD10120G1.pdf PCDD10120G1-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD1065G1_L2_00001 PanJit Semiconductor PCDD1065G1.pdf PCDD1065G1-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDD1065GB_L2_00601 PanJit Semiconductor PCDD1065GB.pdf PCDD1065GB-L2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDE0465G1_R2_00001 PanJit Semiconductor PCDE0465G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDE0665G1_R2_00001 PanJit Semiconductor PCDE0665G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDE0865G1_R2_00001 PanJit Semiconductor PCDE0865G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDE10120G1_R2_00001 PanJit Semiconductor PCDE10120G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDE1065G1_R2_00001 PanJit Semiconductor PCDE1065G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
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PCDE20120G1_R2_00001 PanJit Semiconductor PCDE20120G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB39CA-AU_R2_000A1
Hersteller: PanJit Semiconductor
P6SMB39CA-AU-R2 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ10CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ10CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.40 EUR
274+0.26 EUR
379+0.19 EUR
575+0.12 EUR
2400+0.11 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ10CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ10CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
274+0.26 EUR
379+0.19 EUR
575+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ15CA_R1_00001 P6SMB_SERIES.pdf
P6SMBJ15CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 565 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
186+0.39 EUR
281+0.25 EUR
385+0.19 EUR
565+0.13 EUR
2400+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ15CA_R1_00001 P6SMB_SERIES.pdf
P6SMBJ15CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
281+0.25 EUR
385+0.19 EUR
565+0.13 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ20CAS_R2_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ20CAS_R2_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ26CA-AU_R2_000A1
P6SMBJ26CA-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
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P6SMBJ26CA-AU_R2_000A1
P6SMBJ26CA-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ28A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 795 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
209+0.34 EUR
345+0.21 EUR
472+0.15 EUR
715+0.10 EUR
758+0.09 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ28A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
345+0.21 EUR
472+0.15 EUR
715+0.10 EUR
758+0.09 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ28CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
334+0.21 EUR
371+0.19 EUR
447+0.16 EUR
472+0.15 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ28CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ28CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
278+0.26 EUR
334+0.21 EUR
371+0.19 EUR
447+0.16 EUR
472+0.15 EUR
2400+0.14 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ30A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
228+0.31 EUR
338+0.21 EUR
375+0.19 EUR
457+0.16 EUR
4000+0.09 EUR
5600+0.09 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ30A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
338+0.21 EUR
375+0.19 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ33A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 860 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.40 EUR
268+0.27 EUR
382+0.19 EUR
685+0.10 EUR
725+0.10 EUR
5600+0.10 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ33A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
268+0.27 EUR
382+0.19 EUR
685+0.10 EUR
725+0.10 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ33CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
222+0.32 EUR
404+0.18 EUR
428+0.17 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ33CA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 970 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
139+0.51 EUR
222+0.32 EUR
404+0.18 EUR
428+0.17 EUR
1600+0.16 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA_R2_00001
P6SMBJ33CA_R2_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ33CA_R2_00001
P6SMBJ33CA_R2_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 675 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
152+0.47 EUR
244+0.29 EUR
365+0.20 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
244+0.29 EUR
365+0.20 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ40CA_R2_00001
P6SMBJ40CA_R2_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5997 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.40 EUR
260+0.28 EUR
323+0.22 EUR
432+0.17 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ40CA_R2_00001
P6SMBJ40CA_R2_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
auf Bestellung 5997 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
260+0.28 EUR
323+0.22 EUR
432+0.17 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ48A_R2_00001
P6SMBJ48A_R2_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ48A_R2_00001
P6SMBJ48A_R2_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
173+0.41 EUR
254+0.28 EUR
371+0.19 EUR
695+0.10 EUR
736+0.10 EUR
8000+0.09 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0A_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
254+0.28 EUR
371+0.19 EUR
695+0.10 EUR
736+0.10 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
129+0.56 EUR
209+0.34 EUR
313+0.23 EUR
575+0.12 EUR
20000+0.11 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ5.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
209+0.34 EUR
313+0.23 EUR
575+0.12 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ6.0A_R1_00001 P6SMBJ_SERIES.pdf
Hersteller: PanJit Semiconductor
P6SMBJ6.0A-R1 Unidirectional TVS SMD diodes
auf Bestellung 520 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
298+0.24 EUR
520+0.14 EUR
9600+0.10 EUR
Mindestbestellmenge: 298
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
162+0.44 EUR
236+0.30 EUR
348+0.21 EUR
430+0.17 EUR
2400+0.12 EUR
4000+0.11 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5CA_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
236+0.30 EUR
348+0.21 EUR
430+0.17 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8110DA-AU_R1_000A1 PBHV8110DA.pdf
PBHV8110DA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 100MHz
Pulsed collector current: 3A
auf Bestellung 3123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
371+0.19 EUR
589+0.12 EUR
903+0.08 EUR
955+0.08 EUR
3000+0.07 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PBHV8110DA-AU_R1_000A1 PBHV8110DA.pdf
PBHV8110DA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 100MHz
Pulsed collector current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
228+0.31 EUR
371+0.19 EUR
589+0.12 EUR
903+0.08 EUR
955+0.08 EUR
3000+0.07 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
PCDB0665G1_R2_00001 PCDB0665G1.pdf
Hersteller: PanJit Semiconductor
PCDB0665G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB0865G1_R2_00001
Hersteller: PanJit Semiconductor
PCDB0865G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB10120G1_R2_00001 PCDB10120G1.pdf
Hersteller: PanJit Semiconductor
PCDB10120G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB1065G1_R2_00001 PCDB1065G1.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PCDB1065G1_R2_00001 PCDB1065G1.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PCDB20120G1_R2_00001 PCDB20120G1.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 960A
Case: TO263
Kind of package: reel; tape
Max. forward voltage: 2V
Max. load current: 152A
Semiconductor structure: single diode
Leakage current: 180µA
Power dissipation: 267.9W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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PCDB20120G1_R2_00001 PCDB20120G1.pdf
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 960A
Case: TO263
Kind of package: reel; tape
Max. forward voltage: 2V
Max. load current: 152A
Semiconductor structure: single diode
Leakage current: 180µA
Power dissipation: 267.9W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
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PCDD0465G1_L2_00001
Hersteller: PanJit Semiconductor
PCDD0465G1-L2 SMD Schottky diodes
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PCDD0465GB_L2_00601
Hersteller: PanJit Semiconductor
PCDD0465GB-L2 SMD Schottky diodes
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PCDD05120G1_L2_00001 PCDD05120G1.pdf
Hersteller: PanJit Semiconductor
PCDD05120G1-L2 SMD Schottky diodes
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PCDD0665G1_L2_00001 PCDD0665G1.pdf
Hersteller: PanJit Semiconductor
PCDD0665G1-L2 SMD Schottky diodes
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PCDD0665GB_L2_00601
Hersteller: PanJit Semiconductor
PCDD0665GB-L2 SMD Schottky diodes
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PCDD08120G1_L2_00001 PCDD08120G1.pdf
Hersteller: PanJit Semiconductor
PCDD08120G1-L2 SMD Schottky diodes
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PCDD0865G1_L2_00001
Hersteller: PanJit Semiconductor
PCDD0865G1-L2 SMD Schottky diodes
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PCDD0865GB_L2_00601
Hersteller: PanJit Semiconductor
PCDD0865GB-L2 SMD Schottky diodes
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PCDD10120G1_L2_00001 PCDD10120G1.pdf
Hersteller: PanJit Semiconductor
PCDD10120G1-L2 SMD Schottky diodes
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PCDD1065G1_L2_00001 PCDD1065G1.pdf
Hersteller: PanJit Semiconductor
PCDD1065G1-L2 SMD Schottky diodes
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PCDD1065GB_L2_00601 PCDD1065GB.pdf
Hersteller: PanJit Semiconductor
PCDD1065GB-L2 SMD Schottky diodes
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PCDE0465G1_R2_00001
Hersteller: PanJit Semiconductor
PCDE0465G1-R2 SMD Schottky diodes
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PCDE0665G1_R2_00001
Hersteller: PanJit Semiconductor
PCDE0665G1-R2 SMD Schottky diodes
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PCDE0865G1_R2_00001
Hersteller: PanJit Semiconductor
PCDE0865G1-R2 SMD Schottky diodes
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PCDE10120G1_R2_00001
Hersteller: PanJit Semiconductor
PCDE10120G1-R2 SMD Schottky diodes
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PCDE1065G1_R2_00001
Hersteller: PanJit Semiconductor
PCDE1065G1-R2 SMD Schottky diodes
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PCDE20120G1_R2_00001
Hersteller: PanJit Semiconductor
PCDE20120G1-R2 SMD Schottky diodes
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