Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1231) > Seite 11 nach 21
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P4SMAJ30A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1µA Features of semiconductor devices: glass passivated |
auf Bestellung 1730 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMAJ33CA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1µA Application: automotive industry |
auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMAJ33CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1µA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P4SMAJ33CA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1µA Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1770 Stücke: Lieferzeit 7-14 Tag (e) |
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P4SMAJ33CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1µA Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P4SMAJ36CA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1µA Application: automotive industry |
auf Bestellung 1734 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMAJ36CA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1µA Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1734 Stücke: Lieferzeit 7-14 Tag (e) |
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P4SMAJ5.0A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 0.8mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8570 Stücke: Lieferzeit 7-14 Tag (e) |
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P4SMAJ5.0A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 0.8mA |
auf Bestellung 8570 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMAJ5.0CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1.6mA Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1902 Stücke: Lieferzeit 7-14 Tag (e) |
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P4SMAJ5.0CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1.6mA Features of semiconductor devices: glass passivated |
auf Bestellung 1902 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB18A-AU_R1_006A1 | PanJit Semiconductor | P6SMB18A-AU-R1 Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
P6SMB18A-AU_R2_006A1 | PanJit Semiconductor | P6SMB18A-AU-R2 Unidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P6SMB30CA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Application: automotive industry |
auf Bestellung 1035 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB30CA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1035 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMB36CA-AU_R1_000A1 | PanJit Semiconductor |
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auf Bestellung 390 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMB36CA-AU_R2_000A1 | PanJit Semiconductor | P6SMB36CA-AU-R2 Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P6SMB39CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6SMB39CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6SMBJ10CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 760 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ10CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
auf Bestellung 760 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ15CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 565 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ15CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 565 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ20CAS_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
P6SMBJ20CAS_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P6SMBJ26CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6SMBJ26CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6SMBJ28A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 785 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ28A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1600 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 365 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 850 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
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auf Bestellung 1280 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ33CA_R2_00001 | PanJit Semiconductor | P6SMBJ33CA-R2 Bidirectional TVS SMD diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 375 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ40CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5987 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ40CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
auf Bestellung 5987 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 985 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 985 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 595 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 595 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 520 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 430 Stücke: Lieferzeit 7-14 Tag (e) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Polarisation: bipolar |
auf Bestellung 3123 Stücke: Lieferzeit 14-21 Tag (e) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3123 Stücke: Lieferzeit 7-14 Tag (e) |
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PCDB0665G1_R2_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 6A; reel,tape Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 0.32kA Leakage current: 50µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PCDB0665G1_R2_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 6A; reel,tape Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 0.32kA Leakage current: 50µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PCDB0865G1_R2_00001 | PanJit Semiconductor | PCDB0865G1-R2 SMD Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PCDB10120G1_R2_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2V Max. load current: 76A Leakage current: 0.1mA Max. forward impulse current: 0.64kA Kind of package: reel; tape Power dissipation: 164.8W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PCDB10120G1_R2_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2V Max. load current: 76A Leakage current: 0.1mA Max. forward impulse current: 0.64kA Kind of package: reel; tape Power dissipation: 164.8W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PCDB1065G1_R2_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PCDB1065G1_R2_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
P4SMAJ30A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Features of semiconductor devices: glass passivated
auf Bestellung 1730 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
295+ | 0.24 EUR |
455+ | 0.16 EUR |
736+ | 0.097 EUR |
782+ | 0.092 EUR |
P4SMAJ33CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
642+ | 0.11 EUR |
P4SMAJ33CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P4SMAJ33CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1770 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
642+ | 0.11 EUR |
3600+ | 0.1 EUR |
P4SMAJ33CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P4SMAJ36CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
auf Bestellung 1734 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
642+ | 0.11 EUR |
P4SMAJ36CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1734 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
642+ | 0.11 EUR |
3600+ | 0.1 EUR |
P4SMAJ5.0A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 0.8mA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 0.8mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8570 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
266+ | 0.27 EUR |
388+ | 0.18 EUR |
794+ | 0.09 EUR |
834+ | 0.086 EUR |
1800+ | 0.083 EUR |
P4SMAJ5.0A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 0.8mA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 0.8mA
auf Bestellung 8570 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
266+ | 0.27 EUR |
388+ | 0.18 EUR |
794+ | 0.09 EUR |
834+ | 0.086 EUR |
1800+ | 0.083 EUR |
P4SMAJ5.0CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1902 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
348+ | 0.21 EUR |
486+ | 0.15 EUR |
603+ | 0.12 EUR |
633+ | 0.11 EUR |
P4SMAJ5.0CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
auf Bestellung 1902 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
348+ | 0.21 EUR |
486+ | 0.15 EUR |
603+ | 0.12 EUR |
633+ | 0.11 EUR |
P6SMB18A-AU_R1_006A1 |
Hersteller: PanJit Semiconductor
P6SMB18A-AU-R1 Unidirectional TVS SMD diodes
P6SMB18A-AU-R1 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMB18A-AU_R2_006A1 |
Hersteller: PanJit Semiconductor
P6SMB18A-AU-R2 Unidirectional TVS SMD diodes
P6SMB18A-AU-R2 Unidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMB30CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
265+ | 0.27 EUR |
350+ | 0.2 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
P6SMB30CA-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1035 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
265+ | 0.27 EUR |
350+ | 0.2 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
P6SMB36CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes
P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes
auf Bestellung 390 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
133+ | 0.54 EUR |
390+ | 0.19 EUR |
3200+ | 0.16 EUR |
P6SMB36CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
P6SMB36CA-AU-R2 Bidirectional TVS SMD diodes
P6SMB36CA-AU-R2 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMB39CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMB39CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ10CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
274+ | 0.26 EUR |
379+ | 0.19 EUR |
575+ | 0.12 EUR |
2400+ | 0.11 EUR |
P6SMBJ10CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
274+ | 0.26 EUR |
379+ | 0.19 EUR |
575+ | 0.12 EUR |
P6SMBJ15CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 565 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
281+ | 0.25 EUR |
385+ | 0.19 EUR |
565+ | 0.13 EUR |
2400+ | 0.11 EUR |
P6SMBJ15CA_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
281+ | 0.25 EUR |
385+ | 0.19 EUR |
565+ | 0.13 EUR |
P6SMBJ20CAS_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ20CAS_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ26CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ26CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ28A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
345+ | 0.21 EUR |
472+ | 0.15 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
P6SMBJ28A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
345+ | 0.21 EUR |
472+ | 0.15 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
P6SMBJ28CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
334+ | 0.21 EUR |
371+ | 0.19 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
P6SMBJ28CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
334+ | 0.21 EUR |
371+ | 0.19 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
2400+ | 0.14 EUR |
P6SMBJ30A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 365 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
338+ | 0.21 EUR |
365+ | 0.2 EUR |
458+ | 0.16 EUR |
4000+ | 0.093 EUR |
5600+ | 0.092 EUR |
P6SMBJ30A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
338+ | 0.21 EUR |
365+ | 0.2 EUR |
P6SMBJ33A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 850 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
268+ | 0.27 EUR |
382+ | 0.19 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
5600+ | 0.096 EUR |
P6SMBJ33A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
268+ | 0.27 EUR |
382+ | 0.19 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
P6SMBJ33CA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
P6SMBJ33CA-AU-R1 Bidirectional TVS SMD diodes
P6SMBJ33CA-AU-R1 Bidirectional TVS SMD diodes
auf Bestellung 1280 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
266+ | 0.27 EUR |
404+ | 0.18 EUR |
424+ | 0.17 EUR |
9600+ | 0.16 EUR |
P6SMBJ33CA_R2_00001 |
Hersteller: PanJit Semiconductor
P6SMBJ33CA-R2 Bidirectional TVS SMD diodes
P6SMBJ33CA-R2 Bidirectional TVS SMD diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ36CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
244+ | 0.29 EUR |
365+ | 0.2 EUR |
375+ | 0.19 EUR |
2400+ | 0.11 EUR |
P6SMBJ36CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
244+ | 0.29 EUR |
365+ | 0.2 EUR |
375+ | 0.19 EUR |
P6SMBJ40CA_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5987 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
260+ | 0.28 EUR |
323+ | 0.22 EUR |
432+ | 0.17 EUR |
603+ | 0.12 EUR |
633+ | 0.11 EUR |
P6SMBJ40CA_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
auf Bestellung 5987 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
260+ | 0.28 EUR |
323+ | 0.22 EUR |
432+ | 0.17 EUR |
603+ | 0.12 EUR |
633+ | 0.11 EUR |
P6SMBJ48A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ48A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ5.0A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
254+ | 0.28 EUR |
371+ | 0.19 EUR |
695+ | 0.1 EUR |
736+ | 0.097 EUR |
8000+ | 0.094 EUR |
P6SMBJ5.0A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
254+ | 0.28 EUR |
371+ | 0.19 EUR |
695+ | 0.1 EUR |
736+ | 0.097 EUR |
P6SMBJ5.0CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 595 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
209+ | 0.34 EUR |
313+ | 0.23 EUR |
575+ | 0.12 EUR |
20000+ | 0.11 EUR |
P6SMBJ5.0CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
209+ | 0.34 EUR |
313+ | 0.23 EUR |
575+ | 0.12 EUR |
P6SMBJ6.0A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 520 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
268+ | 0.27 EUR |
382+ | 0.19 EUR |
520+ | 0.14 EUR |
P6SMBJ6.0A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
268+ | 0.27 EUR |
382+ | 0.19 EUR |
520+ | 0.14 EUR |
P6SMBJ7.5CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
236+ | 0.3 EUR |
348+ | 0.21 EUR |
430+ | 0.17 EUR |
2400+ | 0.12 EUR |
4000+ | 0.11 EUR |
P6SMBJ7.5CA_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
236+ | 0.3 EUR |
348+ | 0.21 EUR |
430+ | 0.17 EUR |
PBHV8110DA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 3123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
371+ | 0.19 EUR |
632+ | 0.11 EUR |
906+ | 0.079 EUR |
958+ | 0.075 EUR |
1000+ | 0.072 EUR |
PBHV8110DA-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3123 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
371+ | 0.19 EUR |
632+ | 0.11 EUR |
906+ | 0.079 EUR |
958+ | 0.075 EUR |
1000+ | 0.072 EUR |
PCDB0665G1_R2_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 6A; reel,tape
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 0.32kA
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 6A; reel,tape
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 0.32kA
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDB0665G1_R2_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 6A; reel,tape
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 0.32kA
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 6A; reel,tape
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 0.32kA
Leakage current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDB0865G1_R2_00001 |
Hersteller: PanJit Semiconductor
PCDB0865G1-R2 SMD Schottky diodes
PCDB0865G1-R2 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDB10120G1_R2_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 0.64kA
Kind of package: reel; tape
Power dissipation: 164.8W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 0.64kA
Kind of package: reel; tape
Power dissipation: 164.8W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDB10120G1_R2_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 0.64kA
Kind of package: reel; tape
Power dissipation: 164.8W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 0.64kA
Kind of package: reel; tape
Power dissipation: 164.8W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDB1065G1_R2_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCDB1065G1_R2_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH