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PJC7476_R1_00001 PJC7476_R1_00001 PanJit Semiconductor PJC7476.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
204+0.35 EUR
575+0.12 EUR
642+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 152
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PJD16P06A_L2_00001 PanJit Semiconductor PJD16P06A.pdf PJD16P06A-L2 SMD P channel transistors
auf Bestellung 10928 Stücke:
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82+0.88 EUR
196+0.37 EUR
207+0.35 EUR
1000+0.33 EUR
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PJD18N20_L2_00001 PJD18N20_L2_00001 PanJit Semiconductor PJx18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Produkt ist nicht verfügbar
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PJD25N03_L2_00001 PanJit Semiconductor PJD25N03.pdf PJD25N03-L2 SMD N channel transistors
auf Bestellung 4000 Stücke:
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100+0.72 EUR
290+0.25 EUR
307+0.23 EUR
3000+0.22 EUR
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PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1544 Stücke:
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100+0.72 EUR
145+0.49 EUR
291+0.25 EUR
309+0.23 EUR
9000+0.22 EUR
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PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1544 Stücke:
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100+0.72 EUR
145+0.49 EUR
291+0.25 EUR
309+0.23 EUR
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PJD35P03_L2_00001 PanJit Semiconductor PJD35P03.pdf PJD35P03-L2 SMD P channel transistors
auf Bestellung 2503 Stücke:
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88+0.82 EUR
293+0.24 EUR
309+0.23 EUR
6000+0.22 EUR
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PJD45N06A_L2_00001 PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 239 Stücke:
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67+1.07 EUR
96+0.75 EUR
207+0.35 EUR
219+0.33 EUR
6000+0.31 EUR
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PJD45N06A_L2_00001 PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 239 Stücke:
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67+1.07 EUR
96+0.75 EUR
207+0.35 EUR
219+0.33 EUR
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PJD55N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA
Case: TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 53W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD60P04E-AU_L2_006A1 PanJit Semiconductor PJD60P04E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -61A
Pulsed drain current: -171A
Power dissipation: 38W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD90P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJDLC05_R1_00001 PJDLC05_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; SOT23; Ch: 2; reel,tape; ESD
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1pF
Leakage current: 20µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
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PJE138K_R1_00001 PanJit Semiconductor PJE138K.pdf PJE138K-R1 SMD N channel transistors
auf Bestellung 3089 Stücke:
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277+0.26 EUR
951+0.075 EUR
1007+0.071 EUR
2000+0.068 EUR
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PJE5V0U8TB-AU_R1_000A1 PJE5V0U8TB-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
auf Bestellung 19933 Stücke:
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179+0.4 EUR
695+0.1 EUR
736+0.097 EUR
8000+0.093 EUR
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PJE5V0U8TB-AU_R1_000A1 PJE5V0U8TB-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19933 Stücke:
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179+0.4 EUR
695+0.1 EUR
736+0.097 EUR
8000+0.093 EUR
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PJE8403_R1_00001 PanJit Semiconductor PJE8403.pdf PJE8403-R1 SMD P channel transistors
auf Bestellung 3995 Stücke:
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220+0.33 EUR
715+0.1 EUR
758+0.094 EUR
1000+0.09 EUR
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PJE8408_R1_00001 PanJit Semiconductor PJE8408.pdf PJE8408-R1 SMD N channel transistors
auf Bestellung 3825 Stücke:
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407+0.18 EUR
715+0.1 EUR
758+0.094 EUR
794+0.09 EUR
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU_R1_000A1 PanJit Semiconductor PJEC2415VM1WS-AU Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Semiconductor structure: asymmetric; bidirectional
Application: automotive industry
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 160W
Produkt ist nicht verfügbar
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PJGBLC03C-AU_R1_000A1 PJGBLC03C-AU_R1_000A1 PanJit Semiconductor PJGBLC24C-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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PJGBLC03C_R1_00001 PJGBLC03C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4020 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
275+0.26 EUR
407+0.18 EUR
562+0.13 EUR
596+0.12 EUR
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PJGBLC03C_R1_00001 PJGBLC03C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
auf Bestellung 4020 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
275+0.26 EUR
407+0.18 EUR
562+0.13 EUR
596+0.12 EUR
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PJGBLC05C_R1_00001 PJGBLC05C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 3pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2306 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
271+0.26 EUR
400+0.18 EUR
603+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 186
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PJGBLC05C_R1_00001 PJGBLC05C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 3pF
auf Bestellung 2306 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
271+0.26 EUR
400+0.18 EUR
603+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 186
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PJGBLC12C_R1_00001 PJGBLC12C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4655 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
455+0.16 EUR
500+0.14 EUR
600+0.12 EUR
635+0.11 EUR
Mindestbestellmenge: 365
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PJGBLC12C_R1_00001 PJGBLC12C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
auf Bestellung 4655 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
455+0.16 EUR
500+0.14 EUR
600+0.12 EUR
635+0.11 EUR
Mindestbestellmenge: 365
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PJGBLC24C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf PJGBLC24C-R1 Protection diodes - arrays
auf Bestellung 4430 Stücke:
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345+0.21 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 345
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PJL9407_R2_00001 PanJit Semiconductor PJL9407-R2 SMD P channel transistors
auf Bestellung 2479 Stücke:
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135+0.53 EUR
468+0.15 EUR
496+0.14 EUR
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PJL9850_R2_00001 PanJit Semiconductor PJL9850.pdf PJL9850-R2 Multi channel transistors
auf Bestellung 5047 Stücke:
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82+0.88 EUR
277+0.26 EUR
293+0.24 EUR
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PJMB210N65EC_R2_00601 PanJit Semiconductor PJMB210N65EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMB390N65EC_R2_00601 PanJit Semiconductor PJMB390N65EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMBZ27V-AU_R1_000A1 PJMBZ27V-AU_R1_000A1 PanJit Semiconductor PJMBZ15V-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
486+0.15 EUR
613+0.12 EUR
677+0.11 EUR
849+0.084 EUR
1000+0.077 EUR
Mindestbestellmenge: 358
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PJMBZ27V-AU_R1_000A1 PJMBZ27V-AU_R1_000A1 PanJit Semiconductor PJMBZ15V-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
486+0.15 EUR
613+0.12 EUR
677+0.11 EUR
849+0.084 EUR
1000+0.077 EUR
3000+0.066 EUR
Mindestbestellmenge: 358
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PJMBZ33A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Case: SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. off-state voltage: 26V
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Application: automotive industry
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6 Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJMD280N60E1_L2_00601 PanJit Semiconductor PJMD280N60E1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD360N60EC_L2_00001 PJMD360N60EC_L2_00001 PanJit Semiconductor PJMD360N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMD580N60E1_L2_00001 PJMD580N60E1_L2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF099N60EC_T0_00601 PanJit Semiconductor PJMF099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Produkt ist nicht verfügbar
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PJMF120N60EC_T0_00001 PJMF120N60EC_T0_00001 PanJit Semiconductor PJMF120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
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PJMF190N60E1_T0_00001 PJMF190N60E1_T0_00001 PanJit Semiconductor PJMF190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
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21+3.45 EUR
36+1.99 EUR
39+1.87 EUR
2000+1.8 EUR
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PJMF190N60E1_T0_00001 PJMF190N60E1_T0_00001 PanJit Semiconductor PJMF190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
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21+3.45 EUR
36+1.99 EUR
39+1.87 EUR
Mindestbestellmenge: 21
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PJMF210N65EC_T0_00601 PJMF210N65EC_T0_00601 PanJit Semiconductor PJMF210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMF280N60E1_T0_00001 PJMF280N60E1_T0_00001 PanJit Semiconductor PJMF280N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF360N60EC_T0_00001 PJMF360N60EC_T0_00001 PanJit Semiconductor PJMF360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 PanJit Semiconductor PJMF580N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Gate charge: 15nC
On-state resistance: 0.58Ω
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 PanJit Semiconductor PJMF990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH040N60EC_T0_00201 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH074N60FRC_T0_00601 PJMH074N60FRC_T0_00601 PanJit Semiconductor PJMH074N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 51nC
On-state resistance: 0.12Ω
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Drain-source voltage: 600V
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
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PJMH190N60E1_T0_00601 PanJit Semiconductor PJMH190N60E1.pdf PJMH190N60E1-T0 THT N channel transistors
auf Bestellung 28 Stücke:
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13+5.56 EUR
28+2.56 EUR
1020+1.96 EUR
Mindestbestellmenge: 13
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
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16+4.48 EUR
18+4 EUR
50+3.36 EUR
100+3.02 EUR
250+2.79 EUR
500+2.67 EUR
1000+2.4 EUR
Mindestbestellmenge: 16
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
auf Bestellung 116 Stücke:
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16+4.48 EUR
18+4 EUR
50+3.36 EUR
100+3.02 EUR
Mindestbestellmenge: 16
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PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ1908-AU_R1_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ1908_R1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ2460-AU_R1_000A1 PanJit Semiconductor PJQ2460-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 12.8A
Power dissipation: 2.4W
Case: DFN2020B-6
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4433EP_R2_00201 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -62A
Pulsed drain current: -195A
Power dissipation: 21.7W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ4435EP_R2_00201 PanJit Semiconductor PJQ4435EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJC7476_R1_00001 PJC7476.pdf
PJC7476_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
204+0.35 EUR
575+0.12 EUR
642+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 152
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PJD16P06A_L2_00001 PJD16P06A.pdf
Hersteller: PanJit Semiconductor
PJD16P06A-L2 SMD P channel transistors
auf Bestellung 10928 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
82+0.88 EUR
196+0.37 EUR
207+0.35 EUR
1000+0.33 EUR
Mindestbestellmenge: 82
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PJD18N20_L2_00001 PJx18N20.pdf
PJD18N20_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Produkt ist nicht verfügbar
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PJD25N03_L2_00001 PJD25N03.pdf
Hersteller: PanJit Semiconductor
PJD25N03-L2 SMD N channel transistors
auf Bestellung 4000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
100+0.72 EUR
290+0.25 EUR
307+0.23 EUR
3000+0.22 EUR
Mindestbestellmenge: 100
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PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1544 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
100+0.72 EUR
145+0.49 EUR
291+0.25 EUR
309+0.23 EUR
9000+0.22 EUR
Mindestbestellmenge: 100
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PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1544 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
145+0.49 EUR
291+0.25 EUR
309+0.23 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
PJD35P03_L2_00001 PJD35P03.pdf
Hersteller: PanJit Semiconductor
PJD35P03-L2 SMD P channel transistors
auf Bestellung 2503 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
88+0.82 EUR
293+0.24 EUR
309+0.23 EUR
6000+0.22 EUR
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PJD45N06A_L2_00001 PJx45N06A.pdf
PJD45N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 239 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
67+1.07 EUR
96+0.75 EUR
207+0.35 EUR
219+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
PJD45N06A_L2_00001 PJx45N06A.pdf
PJD45N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
96+0.75 EUR
207+0.35 EUR
219+0.33 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
PJD55N04V-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA
Case: TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 53W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD60P04E-AU_L2_006A1 PJD60P04E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -61A
Pulsed drain current: -171A
Power dissipation: 38W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD90P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJDLC05_R1_00001
PJDLC05_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; SOT23; Ch: 2; reel,tape; ESD
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1pF
Leakage current: 20µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001 PJE138K.pdf
Hersteller: PanJit Semiconductor
PJE138K-R1 SMD N channel transistors
auf Bestellung 3089 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
277+0.26 EUR
951+0.075 EUR
1007+0.071 EUR
2000+0.068 EUR
Mindestbestellmenge: 277
Im Einkaufswagen  Stück im Wert von  UAH
PJE5V0U8TB-AU_R1_000A1
PJE5V0U8TB-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
auf Bestellung 19933 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
695+0.1 EUR
736+0.097 EUR
8000+0.093 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJE5V0U8TB-AU_R1_000A1
PJE5V0U8TB-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19933 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.4 EUR
695+0.1 EUR
736+0.097 EUR
8000+0.093 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJE8403_R1_00001 PJE8403.pdf
Hersteller: PanJit Semiconductor
PJE8403-R1 SMD P channel transistors
auf Bestellung 3995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
220+0.33 EUR
715+0.1 EUR
758+0.094 EUR
1000+0.09 EUR
Mindestbestellmenge: 220
Im Einkaufswagen  Stück im Wert von  UAH
PJE8408_R1_00001 PJE8408.pdf
Hersteller: PanJit Semiconductor
PJE8408-R1 SMD N channel transistors
auf Bestellung 3825 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
407+0.18 EUR
715+0.1 EUR
758+0.094 EUR
794+0.09 EUR
Mindestbestellmenge: 407
Im Einkaufswagen  Stück im Wert von  UAH
PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU
PJEC2415VM1WS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Semiconductor structure: asymmetric; bidirectional
Application: automotive industry
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 160W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC03C-AU_R1_000A1 PJGBLC24C-AU
PJGBLC03C-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC03C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC03C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4020 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
186+0.39 EUR
275+0.26 EUR
407+0.18 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC03C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC03C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
auf Bestellung 4020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
275+0.26 EUR
407+0.18 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC05C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC05C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 3pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2306 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
186+0.39 EUR
271+0.26 EUR
400+0.18 EUR
603+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC05C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC05C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 3pF
auf Bestellung 2306 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
271+0.26 EUR
400+0.18 EUR
603+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC12C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC12C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4655 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
365+0.2 EUR
455+0.16 EUR
500+0.14 EUR
600+0.12 EUR
635+0.11 EUR
Mindestbestellmenge: 365
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC12C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC12C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
auf Bestellung 4655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
365+0.2 EUR
455+0.16 EUR
500+0.14 EUR
600+0.12 EUR
635+0.11 EUR
Mindestbestellmenge: 365
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC24C_R1_00001 PJGBLC03_C24C_SERIES.pdf
Hersteller: PanJit Semiconductor
PJGBLC24C-R1 Protection diodes - arrays
auf Bestellung 4430 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
345+0.21 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 345
Im Einkaufswagen  Stück im Wert von  UAH
PJL9407_R2_00001
Hersteller: PanJit Semiconductor
PJL9407-R2 SMD P channel transistors
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
135+0.53 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 135
Im Einkaufswagen  Stück im Wert von  UAH
PJL9850_R2_00001 PJL9850.pdf
Hersteller: PanJit Semiconductor
PJL9850-R2 Multi channel transistors
auf Bestellung 5047 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
82+0.88 EUR
277+0.26 EUR
293+0.24 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
PJMB210N65EC_R2_00601 PJMB210N65EC.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMB390N65EC_R2_00601 PJMB390N65EC.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMBZ27V-AU_R1_000A1 PJMBZ15V-AU_SERIES.pdf
PJMBZ27V-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
486+0.15 EUR
613+0.12 EUR
677+0.11 EUR
849+0.084 EUR
1000+0.077 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
PJMBZ27V-AU_R1_000A1 PJMBZ15V-AU_SERIES.pdf
PJMBZ27V-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
358+0.2 EUR
486+0.15 EUR
613+0.12 EUR
677+0.11 EUR
849+0.084 EUR
1000+0.077 EUR
3000+0.066 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
PJMBZ33A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Case: SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. off-state voltage: 26V
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Application: automotive industry
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMBZ6V8A-AU_R1_007A1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6C3115A4D6400D6&compId=PJMBZ5V6A-AU_SER.pdf?ci_sign=f585ee1c43ce1983a9bfbd35e4572630b7b120c6
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD280N60E1_L2_00601 PJMD280N60E1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD360N60EC_L2_00001 PJMD360N60EC.pdf
PJMD360N60EC_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD580N60E1_L2_00001
PJMD580N60E1_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF120N60EC_T0_00001 PJMF120N60EC.pdf
PJMF120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF190N60E1_T0_00001 PJMF190N60E1.pdf
PJMF190N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.45 EUR
36+1.99 EUR
39+1.87 EUR
2000+1.8 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
PJMF190N60E1_T0_00001 PJMF190N60E1.pdf
PJMF190N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
36+1.99 EUR
39+1.87 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
PJMF210N65EC_T0_00601 PJMF210N65EC.pdf
PJMF210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF280N60E1_T0_00001 PJMF280N60E1.pdf
PJMF280N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF360N60EC_T0_00001 PJMF360N60EC.pdf
PJMF360N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Gate charge: 15nC
On-state resistance: 0.58Ω
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
PJMF990N65EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMH040N60EC_T0_00201
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH074N60FRC_T0_00601 PJMH074N60FRC.pdf
PJMH074N60FRC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH120N60EC_T0_00601 PJMH120N60EC.pdf
PJMH120N60EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 51nC
On-state resistance: 0.12Ω
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Drain-source voltage: 600V
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH190N60E1_T0_00601 PJMH190N60E1.pdf
Hersteller: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.56 EUR
28+2.56 EUR
1020+1.96 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.48 EUR
18+4 EUR
50+3.36 EUR
100+3.02 EUR
250+2.79 EUR
500+2.67 EUR
1000+2.4 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
18+4 EUR
50+3.36 EUR
100+3.02 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
PJMP360N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ1908-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ1908_R1_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2460-AU_R1_000A1 PJQ2460-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 12.8A
Power dissipation: 2.4W
Case: DFN2020B-6
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4433EP_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -62A
Pulsed drain current: -195A
Power dissipation: 21.7W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4435EP_R2_00201 PJQ4435EP.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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