Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1246) > Seite 4 nach 21
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 3.0SMCJ28A-AU_R2_000A1 | PanJit Semiconductor |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 66A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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3.0SMCJ28CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 66A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ28CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 66A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 3.0SMCJ33A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 3.0SMCJ33A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 3.0SMCJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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3.0SMCJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ33CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ36A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 51.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ36CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 51.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ36CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 51.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 51.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 3.0SMCJ43CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 43V Breakdown voltage: 47.8...54.9V Max. forward impulse current: 43.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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3.0SMCJ48A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ48CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ48CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 3.0SMCJ54A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 34.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 3.0SMCJ54CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 34.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 3.0SMCJ54CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 34.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 3.0SMCJ58CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 32A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 3.0SMCJ58CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 32A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 3.0SMCJ64A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 64V Breakdown voltage: 71.1...81.8V Max. forward impulse current: 29.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 3.0SMCJ70A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 77.8÷89.5V; 26.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 70V Breakdown voltage: 77.8...89.5V Max. forward impulse current: 26.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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3.0SMCJ75CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 83.3÷95.8V; 24.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 24.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 5KMC15AS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 205A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 5KMC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 5KMC15CAS-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 205A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 5KMC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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5KMC22AS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 24.4÷26.9V; 141A; unidirectional; SMC; reel,tape Case: SMC Mounting: SMD Application: automotive industry Kind of package: reel; tape Peak pulse power dissipation: 5kW Max. off-state voltage: 22V Semiconductor structure: unidirectional Leakage current: 5µA Type of diode: TVS Breakdown voltage: 24.4...26.9V Manufacturer series: 5KMC Max. forward impulse current: 141A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 5KMC40AS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 77.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 5KMC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 5KP16A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 17.8÷20.5V; 192A; unidirectional; P600; tape; 5KP Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Max. forward impulse current: 192A Semiconductor structure: unidirectional Case: P600 Mounting: THT Leakage current: 6µA Kind of package: tape Manufacturer series: 5KP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 5KP20A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 22.2÷25.5V; 154A; unidirectional; P600; tape; 5KP Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 154A Semiconductor structure: unidirectional Case: P600 Mounting: THT Leakage current: 6µA Kind of package: tape Manufacturer series: 5KP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 5KP30CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 33.3÷38.3V; 103A; bidirectional; P600; 5kW; 5KP; tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 103A Semiconductor structure: bidirectional Case: P600 Mounting: THT Leakage current: 6µA Kind of package: tape Manufacturer series: 5KP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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5KP36A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 40÷46V; 85A; unidirectional; P600; 5KP; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 85A Semiconductor structure: unidirectional Case: P600 Mounting: THT Leakage current: 6µA Kind of package: Ammo Pack Manufacturer series: 5KP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 5KP36CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; 5kW; 5KP; tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 85A Semiconductor structure: bidirectional Case: P600 Mounting: THT Leakage current: 6µA Kind of package: tape Manufacturer series: 5KP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 5KP48CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; Ammo Pack; 5kW Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 65A Semiconductor structure: bidirectional Case: P600 Mounting: THT Leakage current: 6µA Kind of package: Ammo Pack Manufacturer series: 5KP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 5KP48CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; tape; 5kW; 5KP Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 65A Semiconductor structure: bidirectional Case: P600 Mounting: THT Leakage current: 6µA Kind of package: tape Manufacturer series: 5KP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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AZ23C16_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 16V; SMD; SOT23; double,common anode Type of diode: Zener Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Zener voltage: 16V Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AZ23C18-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: common anode; double Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AZ23C18_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: common anode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AZ23C2V4_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 2.4V; SMD; SOT23; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Case: SOT23 Kind of package: reel; tape Semiconductor structure: common anode; double Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AZ23C2V7_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 2.7V; SMD; SOT23; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.7V Mounting: SMD Case: SOT23 Kind of package: reel; tape Semiconductor structure: common anode; double Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AZ23C3V3-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AZ23C3V3_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: common anode; double |
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AZ23C3V6_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 3.6V; SMD; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: common anode; double Kind of package: reel; tape |
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AZ23C4V7-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 4.7V; SMD; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: common anode; double Kind of package: reel; tape Application: automotive industry |
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AZ23C5V1-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: common anode; double Kind of package: reel; tape Application: automotive industry |
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AZ23C5V1_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: common anode; double Kind of package: reel; tape |
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AZ23C5V6-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: common anode; double Kind of package: reel; tape Application: automotive industry |
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AZ23C5V6_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: common anode; double Kind of package: reel; tape |
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AZ23C6V2_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 6.2V; SMD; SOT23; double,common anode Type of diode: Zener Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Zener voltage: 6.2V Tolerance: ±5% |
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AZ23C6V8_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 6.8V; SMD; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: common anode; double Kind of package: reel; tape |
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AZD27C21_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 21V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 21V Mounting: SMD Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape Tolerance: ±5% |
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| B104S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; 30A; MDI; THT Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 30A Case: MDI Electrical mounting: THT Max. forward voltage: 1.1V |
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| B106S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; MDI Max. forward impulse current: 30A Max. forward voltage: 1.1V Max. off-state voltage: 0.6kV Electrical mounting: SMT Load current: 1A Case: MDI Type of bridge rectifier: single-phase |
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| B108S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; MDI Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: MDI Electrical mounting: SMT Max. forward voltage: 1.1V |
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B10S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Case: MDI Electrical mounting: SMT Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 35A Features of semiconductor devices: glass passivated |
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B4S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.8A Case: MDI Electrical mounting: SMT Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 35A Features of semiconductor devices: glass passivated |
auf Bestellung 5296 Stücke: Lieferzeit 14-21 Tag (e) |
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B6S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 35A Case: MDI Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1V |
auf Bestellung 1897 Stücke: Lieferzeit 14-21 Tag (e) |
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B8S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Case: MDI Electrical mounting: SMT Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 35A Features of semiconductor devices: glass passivated |
auf Bestellung 2697 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS100ATB6_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT563; SMD; 100V; 0.4A; reel,tape Case: SOT563 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.1kV Load current: 0.4A Max. load current: 0.5A Semiconductor structure: double independent Leakage current: 65µA Type of diode: Schottky switching Max. forward impulse current: 5.5A Max. forward voltage: 0.85V |
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BAS40SDW_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W |
auf Bestellung 11990 Stücke: Lieferzeit 14-21 Tag (e) |
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| 3.0SMCJ28A-AU_R2_000A1 |
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Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| 3.0SMCJ28CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ28CA_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| 3.0SMCJ33A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 3.0SMCJ33A-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| 3.0SMCJ33A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ33CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ33CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
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| 3.0SMCJ36A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| 3.0SMCJ36CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ36CA-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| 3.0SMCJ36CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ43CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ48A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ48CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 3.0SMCJ48CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ54A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 3.0SMCJ54CA-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 3.0SMCJ54CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ58CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ58CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 3.0SMCJ64A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 29.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 29.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ70A-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 77.8÷89.5V; 26.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 26.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 77.8÷89.5V; 26.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 26.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ75CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 83.3÷95.8V; 24.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 24.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 83.3÷95.8V; 24.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 24.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 5KMC15AS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 205A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 205A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 5KMC15CAS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 205A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 16.7÷18.5V; 205A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 205A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 5KMC22AS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 24.4÷26.9V; 141A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Peak pulse power dissipation: 5kW
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Leakage current: 5µA
Type of diode: TVS
Breakdown voltage: 24.4...26.9V
Manufacturer series: 5KMC
Max. forward impulse current: 141A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 24.4÷26.9V; 141A; unidirectional; SMC; reel,tape
Case: SMC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Peak pulse power dissipation: 5kW
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Leakage current: 5µA
Type of diode: TVS
Breakdown voltage: 24.4...26.9V
Manufacturer series: 5KMC
Max. forward impulse current: 141A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 5KMC40AS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4÷49.1V; 77.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 77.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 5KMC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 5KP16A_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 17.8÷20.5V; 192A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 192A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 17.8÷20.5V; 192A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 192A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 5KP20A_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 22.2÷25.5V; 154A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 154A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 22.2÷25.5V; 154A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 154A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 5KP30CA_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33.3÷38.3V; 103A; bidirectional; P600; 5kW; 5KP; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33.3÷38.3V; 103A; bidirectional; P600; 5kW; 5KP; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 5KP36A_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷46V; 85A; unidirectional; P600; 5KP; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷46V; 85A; unidirectional; P600; 5KP; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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Stück im Wert von UAH
| 5KP36CA_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; 5kW; 5KP; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; 5kW; 5KP; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 5KP48CA_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; Ammo Pack; 5kW
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; Ammo Pack; 5kW
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| 5KP48CA_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; tape; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; tape; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| AZ23C16_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 16V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 16V
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 16V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 16V
Tolerance: ±5%
Produkt ist nicht verfügbar
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| AZ23C18-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AZ23C18_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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| AZ23C2V4_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 2.4V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 2.4V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Tolerance: ±5%
Produkt ist nicht verfügbar
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| AZ23C2V7_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 2.7V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 2.7V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AZ23C3V3-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AZ23C3V3_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AZ23C3V6_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AZ23C4V7-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 4.7V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 4.7V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AZ23C5V1-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AZ23C5V1_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.1V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AZ23C5V6-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AZ23C5V6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| AZ23C6V2_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 6.2V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 6.2V
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 6.2V; SMD; SOT23; double,common anode
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 6.2V
Tolerance: ±5%
Produkt ist nicht verfügbar
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| AZ23C6V8_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 6.8V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 6.8V; SMD; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: common anode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| AZD27C21_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 21V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 21V
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 21V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 21V
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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| B104S_R2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| B106S_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; MDI
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Electrical mounting: SMT
Load current: 1A
Case: MDI
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; MDI
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Electrical mounting: SMT
Load current: 1A
Case: MDI
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| B108S_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| B10S_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
auf Bestellung 2540 Stücke:
Lieferzeit 14-21 Tag (e)
| B4S_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
auf Bestellung 5296 Stücke:
Lieferzeit 14-21 Tag (e)
| B6S_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
auf Bestellung 1897 Stücke:
Lieferzeit 14-21 Tag (e)
| B8S_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Case: MDI
Electrical mounting: SMT
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 35A
Features of semiconductor devices: glass passivated
auf Bestellung 2697 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS100ATB6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 100V; 0.4A; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.1kV
Load current: 0.4A
Max. load current: 0.5A
Semiconductor structure: double independent
Leakage current: 65µA
Type of diode: Schottky switching
Max. forward impulse current: 5.5A
Max. forward voltage: 0.85V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 100V; 0.4A; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.1kV
Load current: 0.4A
Max. load current: 0.5A
Semiconductor structure: double independent
Leakage current: 65µA
Type of diode: Schottky switching
Max. forward impulse current: 5.5A
Max. forward voltage: 0.85V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS40SDW_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
auf Bestellung 11990 Stücke:
Lieferzeit 14-21 Tag (e)