Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1084) > Seite 3 nach 19
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| 2N7002KTB_R1_00001 | PanJit Semiconductor |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Case: SOT523 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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2N7002KW-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry |
auf Bestellung 3549 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002KW_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Case: SOT323 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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2N7002K_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2745 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002K_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Case: SOT23 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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2SB1197A_R1_00001 | PanJit Semiconductor |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 180MHz Pulsed collector current: 3.5A |
auf Bestellung 1971 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SC164S_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT23-6L Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: SOT23-6L Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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| 2SC2222H_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.1W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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| 2SC2411K-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
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| 2SC2411K_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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| 2SC2411K_R2_00001 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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2SD1781A_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: NPN Power dissipation: 1.25W Collector current: 3A Pulsed collector current: 5A Collector-emitter voltage: 50V Current gain: 300...900 Frequency: 250MHz Polarisation: bipolar |
auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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| 3.0SMCJ15A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 123A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| 3.0SMCJ15CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 123A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| 3.0SMCJ16A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Max. forward impulse current: 115.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| 3.0SMCJ170A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 170V Breakdown voltage: 189...217.5V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| 3.0SMCJ18A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 102.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
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| 3.0SMCJ18A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 102.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| 3.0SMCJ20A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 92.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| 3.0SMCJ24A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 77.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated |
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| 3.0SMCJ24CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 77.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
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| 3.0SMCJ24CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 77.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 3.0SMCJ28A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 66A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| 3.0SMCJ30A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| 3.0SMCJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| 3.0SMCJ33A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| 3.0SMCJ33A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| 3.0SMCJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| 3.0SMCJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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3.0SMCJ33CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 3.0SMCJ36A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 51.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| 3.0SMCJ43CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 43V Breakdown voltage: 47.8...54.9V Max. forward impulse current: 43.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 3.0SMCJ5.0A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 326A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| 3.0SMCJ54A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 34.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| 3.0SMCJ58A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 32A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| 3.0SMCJ58CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 32A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 3.0SMCJ58CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 32A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 3.0SMCJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.67V Max. forward impulse current: 291.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Manufacturer series: 3.0SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| 3.0SMCJ85CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 85V Breakdown voltage: 94.4...108.2V Max. forward impulse current: 20.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 5KMC14AS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 216A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Manufacturer series: 5KMC |
Produkt ist nicht verfügbar |
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| 5KMC14CAS-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 216A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Manufacturer series: 5KMC |
Produkt ist nicht verfügbar |
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| 5KMC30AS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape Manufacturer series: 5KMC Peak pulse power dissipation: 5kW Application: automotive industry Semiconductor structure: unidirectional Kind of package: reel; tape Case: SMC Mounting: SMD Type of diode: TVS Leakage current: 5µA Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 103A |
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| 5KMC30CAS-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape Manufacturer series: 5KMC Peak pulse power dissipation: 5kW Application: automotive industry Semiconductor structure: bidirectional Kind of package: reel; tape Case: SMC Mounting: SMD Type of diode: TVS Leakage current: 5µA Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 103A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 5KMC33AS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape Manufacturer series: 5KMC Peak pulse power dissipation: 5kW Application: automotive industry Semiconductor structure: unidirectional Kind of package: reel; tape Case: SMC Mounting: SMD Type of diode: TVS Leakage current: 5µA Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 93.9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 5KMC33CAS-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape Manufacturer series: 5KMC Peak pulse power dissipation: 5kW Application: automotive industry Semiconductor structure: bidirectional Kind of package: reel; tape Case: SMC Mounting: SMD Type of diode: TVS Leakage current: 5µA Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 93.9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 5KMC36AS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; unidirectional; SMC; reel,tape Manufacturer series: 5KMC Peak pulse power dissipation: 5kW Application: automotive industry Semiconductor structure: unidirectional Kind of package: reel; tape Case: SMC Mounting: SMD Type of diode: TVS Leakage current: 5µA Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 86.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 5KMC36CAS-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; bidirectional; SMC; reel,tape Manufacturer series: 5KMC Peak pulse power dissipation: 5kW Application: automotive industry Semiconductor structure: bidirectional Kind of package: reel; tape Case: SMC Mounting: SMD Type of diode: TVS Leakage current: 5µA Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 86.1A |
Produkt ist nicht verfügbar |
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AZ23C27-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Application: automotive industry |
Produkt ist nicht verfügbar |
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AZ23C27_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AZ23C3V3-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 3.3V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AZ23C3V6_R1_00501 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 3.6V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS16TS-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: fast switching |
auf Bestellung 28630 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16TS_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: fast switching |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16TW_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape Features of semiconductor devices: fast switching |
auf Bestellung 2824 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS21_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2.5A Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: fast switching |
auf Bestellung 2920 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS316_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 0.5µA Kind of package: reel; tape Max. load current: 0.5A |
Produkt ist nicht verfügbar |
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BAS40SDW-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Max. forward voltage: 1V Leakage current: 22µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS40SDW_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Case: SOT363 Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Leakage current: 1µA |
auf Bestellung 11990 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS40S_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70S-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: double series Features of semiconductor devices: fast switching Max. forward voltage: 0.9V Leakage current: 45µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002KTB_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002KW-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
auf Bestellung 3549 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 379+ | 0.19 EUR |
| 697+ | 0.1 EUR |
| 1171+ | 0.061 EUR |
| 1425+ | 0.05 EUR |
| 3000+ | 0.039 EUR |
| 2N7002KW_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT323
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT323
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002K_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2745 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 910+ | 0.079 EUR |
| 1498+ | 0.048 EUR |
| 2058+ | 0.035 EUR |
| 2337+ | 0.031 EUR |
| 2N7002K_R2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SB1197A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 3.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 3.5A
auf Bestellung 1971 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 280+ | 0.26 EUR |
| 481+ | 0.15 EUR |
| 1000+ | 0.1 EUR |
| 2SC164S_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC2222H_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC2411K-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC2411K_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC2411K_R2_00001 |
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1781A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 300...900
Frequency: 250MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 300...900
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 716 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 212+ | 0.34 EUR |
| 334+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 3.0SMCJ15A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ15CA_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ16A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ170A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ18A-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 3.0SMCJ18A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ20A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ24A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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| 3.0SMCJ24CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| 3.0SMCJ24CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| 3.0SMCJ28A-AU_R2_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 3.0SMCJ30A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 3.0SMCJ30A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ33A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 3.0SMCJ33A-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 3.0SMCJ33A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ33CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| 3.0SMCJ33CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| 3.0SMCJ36A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ43CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| 3.0SMCJ5.0A_R2_00001 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ54A-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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Stück im Wert von UAH
| 3.0SMCJ58A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ58CA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| 3.0SMCJ58CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| 3.0SMCJ6.0A_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 291.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 291.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 3.0SMCJ85CA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 20.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 20.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| 5KMC14AS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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| 5KMC14CAS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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| 5KMC30AS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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| 5KMC30CAS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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| 5KMC33AS-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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| 5KMC33CAS-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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| 5KMC36AS-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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| 5KMC36CAS-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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| AZ23C27-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
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Stück im Wert von UAH
| AZ23C27_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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| AZ23C3V3-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AZ23C3V6_R1_00501 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BAS16TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
auf Bestellung 28630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.057 EUR |
| 1786+ | 0.04 EUR |
| 2184+ | 0.033 EUR |
| 2464+ | 0.029 EUR |
| 2794+ | 0.026 EUR |
| BAS16TS_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 299+ | 0.24 EUR |
| BAS16TW_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 2824 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 589+ | 0.12 EUR |
| 710+ | 0.1 EUR |
| 887+ | 0.081 EUR |
| 993+ | 0.072 EUR |
| 1183+ | 0.06 EUR |
| BAS21_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1220+ | 0.059 EUR |
| 1651+ | 0.043 EUR |
| 2184+ | 0.033 EUR |
| 2539+ | 0.028 EUR |
| BAS316_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BAS40SDW-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 506+ | 0.14 EUR |
| 642+ | 0.11 EUR |
| 946+ | 0.076 EUR |
| 1194+ | 0.06 EUR |
| BAS40SDW_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 1µA
auf Bestellung 11990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 910+ | 0.079 EUR |
| 1155+ | 0.062 EUR |
| 1303+ | 0.055 EUR |
| BAS40S_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 878+ | 0.082 EUR |
| 1437+ | 0.05 EUR |
| 1977+ | 0.036 EUR |
| 2243+ | 0.032 EUR |
| BAS70S-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Leakage current: 45µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Leakage current: 45µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 962+ | 0.074 EUR |
| 1471+ | 0.049 EUR |
| 1977+ | 0.036 EUR |
| 2165+ | 0.033 EUR |